6 results about "External field" patented technology

A sample holder for advanced in-situ microscopy is described. The sample holder includes integrated devices to apply external fields and other stimuli to samples being inspected. The integrated devices can emulate operating environments for the samples. The sample holder and advanced microscopy can be used to study quantum characteristics and properties of samples.

The application discloses a particle transport control method in a micro-nano fluid system, comprising the following steps: dividing a calculation domain of the micro-nano fluid system into multiple sub-domains, including an atomic domain, a continuous domain and a common region where the two coexist; defining a boundary condition of the common region, transmitting physical quantity information in the atomic domain to the continuous domain by defining a constraint condition on the common region, and transmitting fluid velocity and pressure information in the continuous domain back to the atomic domain; adopting an iterative solution strategy to update the physical quantity information of the atomic domain and the continuous domain; and applying an external field factor to verify the particle transport control performance in the micro-nano fluid system based on the multi-scale coupling calculation method. The application solves the technical problems of low particle cross-domain transport precision, large dynamic flow field prediction deviation and low simulation efficiency in the existing micro-nano fluid system.

This invention relates to the field of intelligent diagnostic technology and discloses a quantitative X-ray scattering intensity anisotropy assessment system based on free-electron lasers. The system includes a signal excitation and acquisition end, a dynamic quantitative analysis end, and a power distribution station assessment adaptation end. By employing a free-electron laser source, the generated X-rays possess intrinsic high throughput and ultrashort pulse characteristics, laying the foundation for obtaining high-contrast scattering signals within materials. The system further introduces background noise filtering and data layering techniques to preprocess and hierarchically separate the acquired scattering signals, thereby supporting early identification and assessment of equipment status. Through signal synchronization and time series construction, the system can correlate external field loading with the material's scattering response, achieving dynamic tracking of the material's anisotropic evolution process under external field action, providing dynamic data support for predicting equipment lifespan and formulating maintenance strategies.

This application provides a method, system, device, and storage medium for measuring the external field parameters of a superconducting quantum system, relating to the technical field of quantum information computing. The method for measuring the external field parameters of a superconducting quantum system includes: performing quantum evolution at multiple preset evolution times on multiple first preset external field parameters based on a target Hamiltonian and an initial state to determine first quantum state data; determining a target probability set based on the first quantum state data; performing quantum evolution at multiple preset evolution times on second preset external field parameters based on the target Hamiltonian and the initial state to determine second quantum state data; performing joint time-domain Bayesian estimation based on the target probability set, the second quantum state data, and a Bayesian estimation framework to determine the target posterior probability distribution corresponding to the second preset external field parameters; and determining the target external field parameters based on the target posterior probability distribution and the second preset external field parameters. This application can achieve stable and high-precision measurement of unknown external field parameters.

Sensor detection integration device (006) comprising the following: a sensor object information unit that generates integration object information (205A, 205B) by integrating sensor object information (207A, 207B, 207C) with respect to a sensor object obtained by multiple detection sensors for an external field that detect an object in an external field, the sensor object information integration unit (010) comprises: an integration object information storage unit (106) that stores the integration object information (205A, 205B), a prediction update unit (100) that extracts a predictable prediction object from the integration object information (205A, 205B) previously stored in the integration object information storage unit (106), and predicts a position of the prediction object after a predetermined time without using the sensor object information (207A, 207B, 207C), an allocation unit (101) that estimates the prediction object to be assigned to the sensor object information (207A, 207B, 207C), an offset parameter update unit (102) that updates an offset parameter required for calculating an offset to be applied to the sensor object information (207A, 207B, 207C), an integration target information generation unit (104) that applies the offset to the sensor object based on the offset parameter and generates integration target information (204) in which the prediction object and the sensor object with applied offset are linked, based on an estimation result of the assignment unit (101), and an integration update unit (105) that generates the integration object information (205A, 205B) with the estimated position of the object based on the integration target information (204).

This invention provides a method for preparing BaM thin films by synergistically enhancing the properties of BaM thin films through external field assistance and doping. The method includes: Step 1, preparing a melt: using BaCO3, Fe2O3, TiO2, and CoO as raw materials, and K2CO3, Bi2O3, and B2O3 as fluxes, weighing the above raw materials and fluxes, mixing and melting them to obtain a uniformly mixed melt; Step 2, external field-induced thin film growth: cooling to 880~930℃, and after the melt temperature stabilizes, immersing a fixture with a substrate into the melt, and applying a strong vertical magnetic field to start growing the thin film by utilizing the guiding effect of the magnetic field on the grains; Step 3, removing the thin film: after growth, removing the thin film and cleaning it; Step 4, processing the thin film: cutting, grinding, polishing, and cleaning the cleaned thin film to obtain the BaM thin film. This invention pioneers a three-in-one synergistic control strategy of "substrate lattice matching - external magnetic field induction - element doping" to achieve a synergistic enhancement of high orientation, low defect density, and high magnetic properties of BaM thin films.