265 results about "Magnetic memory" patented technology

The invention provides a magnetic memory, a magnetic memory unit and a magnetic memory system. The magnetic memory at least comprises a first antiferromagnetic layer, a free layer, a barrier layer, a reference layer and a second antiferromagnetic layer which are sequentially stacked from bottom to top, wherein the magnetic moment direction of the reference layer is a first direction, the magnetic moment direction of the free layer is a second direction, and the first direction is perpendicular to the second direction; when the magnetic memory is in a first mode, applying a current parallel to a second direction to the first antiferromagnetic layer, so that the magnetic moment direction of the free layer is changed from the second direction to a direction parallel to the first direction, and the magnetic memory is switched from the first mode to the second mode; the first mode is used for detecting a magnetic field around the magnetic memory; the second mode is used for data storage. Therefore, the magnetic memory can be switched from the sensing mode to the storage mode, and the occupied space and cost can be saved at the same time.

A magnetic memory device includes a spin-orbit interaction active core having a number of layers stacked along a longitudinal axis and a magnetic junction extending around the longitudinal axis and substantially surrounding at least a portion of the spin-orbit interaction active core. The magnetic junction includes a free layer, a reference layer, and a tunnel barrier layer between the free layer and the reference layer.

A magnetic memory device may include a pinned magnetic pattern and a free magnetic pattern which are stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a capping pattern on the free magnetic pattern, and a non-magnetic pattern between the free magnetic pattern and the capping pattern. The free magnetic pattern may be between the tunnel barrier pattern and the capping pattern. The non-magnetic pattern may include a first non-magnetic metal and boron, and the capping pattern includes a second non-magnetic metal. A boride formation energy of the second non-magnetic metal may be higher than a boride formation energy of the first non-magnetic metal.

The invention discloses a steel box girder hidden damage identification method based on a magnetic memory effect, and relates to the technical field of bridge structure health monitoring, and the method comprises the steps: employing a magnetic memory detector, arranging a probe to detect the normal component of a leakage magnetic field on the surface of a steel box girder, carrying out the normalization processing of an original signal in order to eliminate the influence of an initial residual magnetic field, calculating to obtain a benchmark magnetic signal variable quantity; detecting lines are arranged on the upper flange, the lower flange and the web of the steel box girder at the interval of 5mm, and detecting points are arranged on the detecting lines at the interval of 1mm; carrying out graded loading on the steel box girder, synchronously acquiring strain data and magnetic memory signal data, and constructing a structured data set; a magnetic signal variation distribution curve is drawn according to the data set, the curve form is analyzed to recognize a local extreme point, and the position of the extreme point is a local buckling damage area; and verifying the consistency of the position of the extreme point and the actual buckling damage area by comparing the final damage form of the test piece, so as to realize high-precision positioning of the hidden damage.

The invention relates to a perpendicular anisotropic magnetic memory based on rare earth doped antiferromagnetic, which comprises a thin film structure, and the thin film structure sequentially comprises a buffer layer, a heavy metal layer, a perpendicular magnetic anisotropic layer, a rare earth doped antiferromagnetic layer and a protective layer from bottom to top, according to the invention, the magnetic texture is changed by doping rare earth elements into the collinear antiferromagnetic to break the symmetry of the system, and the spin-orbit torque is utilized to drive the magnetic state of the memory device with perpendicular magnetic anisotropy to overturn only by means of current under the condition of no external field assistance. The method provides a new implementation path for a low-power-consumption and high-density spin storage technology, has a good application prospect, and is expected to promote actual development and application of novel magnetic storage devices in the future.

The invention relates to the technical field of pipeline detection, in particular to an intelligent non-contact pipeline detection system based on a metal magnetic memory effect, and provides the following scheme: dividing a to-be-detected pipeline into a plurality of grid units, obtaining self-leakage magnetic field data of each grid, constructing a magnetic moment matrix, and forming a magnetic field matrix; according to the method, abnormal grids are positioned based on a magnetic field matrix, a grid with the highest abnormal score is selected from a spatially continuous abnormal set through screening logic to serve as a seed grid, authenticity of adjacent abnormal grids is verified step by step in combination with a local inversion window and magnetic flux continuity constraint, false anomalies caused by magnetic flux diffusion or noise are eliminated, and the accuracy of the abnormal grids is improved. Performing magnetic moment matrix updating on the confirmed real defect grid; and finally, calculating a magnetic gradient modulus by utilizing the updated magnetic moment matrix and determining a damage grade. Adjacent lattice infection can be effectively inhibited, the defect positioning precision and the damage evaluation reliability are improved, and the method is suitable for a non-contact inspection scene of an in-service pipeline.

A bilayer film of a magnetic body and an insulator has an antiferromagnetic layer having a hexagonal crystal structure and at least one surface of which is the (10-10) surface of an antiferromagnetic body, and an insulator layer containing two or three or four atoms laminated on the (10-10) surface of the antiferromagnetic layer. A bilayer film of a magnetic body and an insulator has an antiferromagnetic layer having a hexagonal crystal structure and at least one surface of which is the (0001) surface of an antiferromagnetic body, and an insulator layer containing two or three or four atoms laminated on the (0001) surface of the antiferromagnetic layer. The tunneling magnetoresistive element has a second antiferromagnetic film layer laminated on the insulator of the bilayer film. The magnetic memory includes a plurality of the tunneling magnetoresistive elements.

The invention provides a magnetic storage unit and device based on signal time delay. The unit comprises a first spin orbit moment layer and a first magnetic tunnel junction arranged on the first spin orbit moment layer. The distances between the first magnetic tunnel junction and the two ends of the first spin orbit moment layer are respectively a first distance and a second distance, and the first distance and the second distance are not equal; respectively inputting a first pulse signal and a second pulse signal from two ends of the first spin orbit moment layer along the first distance and the second distance; and the first pulse signal and the second pulse signal form a first write-in spin transfer torque current at the first magnetic tunnel junction due to signal time delay, so that the magnetic moment of a free layer of the first magnetic tunnel junction is subjected to deterministic overturning under the action of the first write-in spin transfer torque current. Deterministic writing of the magnetic tunnel junction can be realized without an additional auxiliary magnetic field, the device structure is simplified, and the area and power consumption overhead are reduced.

The present disclosure provides a unidirectional write magnetoelectric coupled magnetic memory, comprising: a spin-orbit coupling layer; a magnetoelectric coupling layer unit, comprising a first magnetoelectric coupling layer and a second magnetoelectric coupling layer which are symmetrically formed on the upper and lower sides of the spin-orbit coupling layer, respectively; a free layer unit, comprising a first free layer and a second free layer which are symmetrically formed outside the first magnetoelectric coupling layer and the second magnetoelectric coupling layer, respectively; a barrier layer unit, comprising a first barrier layer and a second barrier layer which are symmetrically formed outside the first free layer and the second free layer, respectively; a reference layer unit, comprising a first reference layer and a second reference layer which are symmetrically formed outside the first barrier layer and the second barrier layer, respectively; a pinning layer unit, comprising a first pinning layer and a second pinning layer which are symmetrically formed outside the first reference layer and the second reference layer, respectively; a top electrode unit; a read electrode unit; and a write electrode unit. Further provided are a manufacturing method for the magnetic memory and an array connection circuit of the magnetic memory.

A 3D magnetic memory device includes a stack having dielectric layers and silicon-based layers arranged alternately, and a magnetic material channel formed through the stack. The channel has a first diameter at which it extends through the silicon-based layer and a second diameter at which it extends through the dielectric layer. Pinning sites defined by layers are formed in the channel, each pinning site configured to store one magnetic potential. A first metal layer is disposed on the first end of the channel and the stack. A magnetic tunnel junction (MTJ) and a first electrode are arranged on the first metal layer at a distance from each other. The first metal layer is configured as a spin-orbit torque (SOT) orbit, or the second metal layer is configured as a SOT orbit, where the second end of the channel and the stack are disposed on the second metal layer.

The invention provides a pipeline welding seam detection method and device based on magnetic memory. The method comprises the steps that magnetic memory signals of a tangential component and a normal component of a pipeline welding seam area are collected, and first magnetic charge density distribution caused by metal phase change and second magnetic charge density distribution caused by residual stress are calculated respectively based on amplitude distribution characteristics of the magnetic memory signals; performing coupling superposition on the distribution of the first magnetic charge density and the distribution of the second magnetic charge density to obtain total magnetic charge density distribution representing stress and phase change coupling; according to the total magnetic charge density distribution, calculating predicted magnetic signal distribution of the welding seam area through integration; and comparing and analyzing the predicted magnetic signal distribution and the magnetic memory signal, and when an inner peak and an outer peak appear in a normal component in a comparison result and an extreme value appears in a tangential component at a corresponding position, determining that a crack defect exists in a welding seam area, and generating a welding seam detection result. According to the method, the multi-parameter coupling effect can be comprehensively considered, the weld crack defect is accurately identified through comparative analysis, and the detection precision is improved.

According to one embodiment, a magnetic memory includes first magnetic members extending in a first direction, first wirings extending in a second direction and spaced from each other in a third direction, and a second magnetic member. The second magnetic member has a first portion above the first wirings, a second portion extending in the second direction between adjacent first wirings, a third portion below the plurality of first wirings, and a fourth portion with a part inside an upper end portion of a first magnetic member. A third wiring extends in the third direction and is connected to lower end portions of first magnetic members.

The present invention provides a magnetic storage device that can suppress the degradation of the characteristics of a magnetoresistive element, and a method for manufacturing a magnetic storage device. [Solution] A magnetic memory device 1 of one embodiment includes a first wiring 21 extending in a first direction X, a second wiring 28 extending in a second direction Y intersecting the first direction and provided above the first wiring, a first memory cell provided between the first wiring and the second wiring, a third wiring 21 extending in the first direction and provided above the second wiring, and a second memory cell provided between the second wiring and the third wiring. The first memory cell includes a first selector body 24, a first conductor 26, and an MTJ body 27 provided on the upper surface of the first conductor. The second memory cell includes a second selector body 24, a second conductor 26, and a second MTJ body 27 provided on the upper surface of the second conductor. The upper surface of the first conductor is flattened.

Provided are a magnetic memory device, a method of manufacturing the magnetic memory device, and a memory apparatus including the magnetic memory device. The magnetic memory device includes a spin-orbit torque (SOT) generation layer configured to generate a SOT, a spin current transfer layer on a lower surface of the SOT generation layer, and a tunneling magnetoresistance layer on a lower surface of the spin current transfer layer and including a free layer, a tunnel barrier layer, and a pinned layer. The spin current transfer layer is configured to transfer a spin current generated from the SOT generation layer to the free layer.

The invention discloses pure-phase bismuth ferrite-strontium titanate ceramic as well as a preparation method and application thereof, and belongs to the field of lead-free ferroelectric ceramic. Comprising the following steps: filling pure-phase BFO-STO precursor powder prepared by a hydrothermal method into a graphite mold, controlling the heating rate to a sintering temperature, and sintering under the conditions of external pressure and heat preservation, so as to finally prepare the BFO-STO ceramic. The BFO-STO ceramic is prepared through SPS sintering, volatilization of Bi < 3 + > and generation of impure phases are effectively inhibited, ferroelectric, dielectric and magnetic properties of the BFO ceramic are effectively improved, and possibility is provided for practical application of the BFO-STO ceramic in the fields of functional sensors, magnetic memories, piezoelectric generators, high-temperature inductors and the like.

In a method of manufacturing a magnetic memory device, a temporary shift cancel layer including X metal atoms and Y metal atoms as free atoms may be formed. A magnetic tunnel junction layer may be formed on the temporary shift cancel layer. The magnetic tunnel junction layer and the temporary shift cancel layer may be etched to form a magnetic tunnel junction pattern and a temporary shift cancel pattern. The Y metal atoms redeposited between the magnetic tunnel junction pattern and the temporary shift cancel pattern may be oxidized to form metal oxide. The Y metal atoms of the temporary shift cancel pattern may be substituted with Z metal atoms to form a shift cancel pattern. The Y metal atoms may have higher oxidizing than the Z metal atoms. The Z metal atoms may have a higher reduction potential than the Y metal atoms.

A magnetic memory device includes a substrate, a base insulating film on the substrate, a magnetic tunnel junction element including first and second magnetic patterns and a tunnel barrier pattern therebetween on the base insulating film, an upper electrode pattern on an upper face of the magnetic tunnel junction element, a capping structure including a first to third capping films sequentially stacked on a side face of the magnetic tunnel junction element, and a conductive line on both the upper electrode pattern and the capping structure and connected to the upper electrode pattern. An uppermost end of the second capping film is higher than an uppermost end of the first capping film, an uppermost end of the third capping film is lower than the uppermost end of the first capping film, and the second capping film includes a material different from respective materials of the first and third capping films.

The invention provides a comprehensive detection system and method for steel plate defects, and relates to the technical field of steel plate defect detection, the comprehensive detection system comprises an infrared sensor, a synchronous laser encoder, a Hall sensor, a control device, an image acquisition device, a semi-shielding excitation device and a server, and the infrared sensor is connected with the control device. According to the comprehensive detection system and method for the steel plate defects, key subsystems such as image acquisition, magnetic flux leakage detection and magnetic memory detection are organically integrated through modular and complete-set design, and a set of detection device which is high in industrialization degree and flexible to deploy is formed under the assistance of a multi-stage filtering noise reduction and intelligent image processing algorithm. The device not only can stably operate under complex working conditions, but also can quickly position and classify internal and external defects of the steel plate, so that the detection accuracy is remarkably improved, and the risks of missing detection and error detection are effectively reduced, thereby meeting the strict requirements of an efficient production line on quality control.

The invention provides a magnetic memory and a data writing method of the magnetic memory, and relates to the technical field of semiconductors. The magnetic memory at least comprises a plurality of magnetic memory units which are arranged in an array, word lines which correspond to and are electrically connected with each row of magnetic memory units, and a row selection module which is electrically connected with each row of magnetic memory units through the word lines, wherein the same column of magnetic storage units comprises first magnetic storage units and second magnetic storage units, and at least one of the first magnetic storage units and the second magnetic storage units is arranged in multiple rows; when address data is input into the row selection module, the row selection module selects and writes the first logic data into all the first magnetic storage units in the same column, and then selects and writes the second logic data into all the second magnetic storage units in the same column; the first logic data and the second logic data are opposite in logic, so that power consumption and time overhead caused by frequent switching of the written data are optimized, and the writing performance is remarkably improved.

This invention discloses a high-coercivity hard magnetic oxide semiconductor thin film with perpendicular magnetic anisotropy and its preparation method. The invention employs a multi-target alternating gradient film preparation process, using NiFeO4 and NiCo2O4 targets for alternating sputtering to prepare NiCo2-xFexO4-NiCo2O4 gradient thin films. Experimental results show that the obtained films exhibit a coercivity as high as 1T and good conductivity, with an anomalous Hall resistivity reaching 52.5 μΩ·cm. This preparation method has the advantages of simplicity and low cost, providing new possibilities for the development of magnetic storage devices. This method has significant application potential for realizing high-density, high-speed, and low-power magnetic storage devices, contributing to the development and application of magnetic storage technology.

The invention relates to the technical field of magnetic memory detection devices, in particular to a self-adaptive variable-diameter rotatable pipeline internal magnetic memory detection robot which comprises a magnetic memory detection mechanism connected with a power mechanism through a steering mechanism. The power mechanism comprises a second mounting seat, and a plurality of walking assemblies are arranged on the peripheral side of the second mounting seat; the steering mechanism comprises a left end connecting piece connected with the first installation base and a right end connecting piece connected with the second installation base, and the left end connecting piece is hinged to the right end connecting piece. According to the invention, the magnetic memory detection mechanism can realize self-adaptive variable diameter and omnibearing rotation detection functions at the same time during working; the steering mechanism is connected with the magnetic memory detection mechanism and the power mechanism, so that the adaptability and trafficability of the whole robot at different bent pipes can be realized; the power mechanism can achieve free lifting and obstacle crossing functions of the crawler belt and overall power of the robot.

According to one embodiment, a magnetic memory device includes: a first conductor layer extending in a first direction; a second conductor layer extending in the first direction and arranged with the first conductor layer in a second direction intersecting the first direction; a first magnetoresistance effect element electrically connected to the first conductor layer; a second magnetoresistance effect element electrically connected to the second conductor layer; and a third conductor layer extending in the second direction and in contact with the first magnetoresistance effect element. In a write operation of writing data to the first magnetoresistance effect element, a first current is applied to the first conductor layer, a second current is applied to the second conductor layer, and a third current is applied to the third conductor layer independently of the first current and the second current.

The application discloses a high-elasticity-modulus magnetic memory alloy prepared based on a liquid die forging method and a preparation method thereof, and belongs to the technical field of magnetic memory alloy preparation. 51‑x Ni 25 Ga 24 Gd x , wherein x=0.4-0.6. The preparation method of the high-elasticity-modulus magnetic memory alloy prepared based on the liquid die forging method comprises the following steps: taking nickel powder, manganese powder, gallium powder and gadolinium powder according to atomic percentage, ball-milling and mixing, and then sequentially performing liquid die forging and pressure forming to obtain the high-elasticity-modulus magnetic memory alloy. The application adopts trace rare earth element Gd element to replace Mn element, and adopts a liquid die forging technology to prepare a high-performance magnetic memory alloy. The magnetic memory alloy has the characteristics of high elastic modulus and small brittleness, and solves the problems of large brittleness and low elastic modulus of the existing Mn2NiGa magnetic memory alloy.

A magnetic memory device may include a magnetic track that extends in a first direction. The magnetic track may include a lower magnetic layer that extends in the first direction, an upper magnetic layer that extends in the first direction on the lower magnetic layer, a spacer layer that extends in the first direction between the lower magnetic layer and the upper magnetic layer, and a non-magnetic pattern that penetrates the upper magnetic layer and is on the spacer layer. The non-magnetic pattern has a first junction surface that is in contact with a first portion of the upper magnetic layer, and a second junction surface that is in contact with a second portion of the upper magnetic layer. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer.

The utility model discloses a filter press relates to wastewater treatment technical field. The filter press includes main support, a plurality of filter plate subassembly, filter piece, liquid inlet pipeline and vibration joint spare. The main support includes the first support and the second support who arranges at interval along the first direction, and a plurality of filter plate subassembly are arranged along the first direction between the first support and the second support, and the filter chamber that is equipped with along the second direction extends on the filter plate subassembly, and the filter piece is installed in the filter chamber inside along the second direction, and the liquid inlet pipeline is worn in the main support along the first direction, and is linked together with the filter chamber, and the vibration joint spare is set up in the main support and includes the magnetic memory alloy drive assembly and the action spare who arranges along the first direction, and the action spare is connected with the magnetic memory alloy drive assembly, and the magnetic memory alloy drive assembly can drive the action spare and displace along the first direction, and then impact the main support. The filter press is used for simplifying the mechanical structure of vibration mechanism in the filter press, and the installation use and maintenance maintenance of vibration mechanism are convenient.

The application discloses a method for reducing energy consumption of magnetic storage unit flip, relates to the technical field of magnetic storage unit, and aims at reducing energy consumption of information writing. The magnetic storage unit is caused to occur magnetic moment flip through a spin-polarized current. The spin-polarized current gradually changes from an initial value to zero with time. The size of the spin-polarized current is as follows: I t =I0-at; wherein, I t is the spin-polarized current at t nanoseconds since the initial moment, I0 is the initial value of the spin-polarized current at the initial moment, and a is a constant, and a represents a gradual change coefficient. The application has the advantages of stable information writing and low energy consumption.

The invention discloses a tensile stress on-line monitoring and fracture position prediction method for three-dimensional metal magnetic memory, and relates to the technical field of metal magnetic memory detection, in particular to a tensile stress on-line monitoring and fracture position prediction method for three-dimensional metal magnetic memory. Metal magnetic memory detection is widely concerned due to the fact that the metal magnetic memory detection has outstanding advantages on stress state evaluation of ferromagnetic materials, a static load tensile test of fixed strain speed loading and fixed stress speed loading is carried out on 45 # steel, and the three-dimensional metal magnetic memory tensile stress on-line monitoring and fracture position predicting method has the advantages that in the elastic stage, the tensile stress on-line monitoring and fracture position predicting functions are achieved; the metal magnetic memory signal is linearly increased and decreased along with the increase of the stress; in the yield stage, the metal magnetic memory signal is rapidly increased and decreased after fluctuation is generated; in the yield strengthening stage, a metal magnetic memory signal is slowly increased or decreased; in the necking stage, the metal magnetic memory signal is rapidly increased and decreased; after the sample is broken, the metal magnetic memory signal is rapidly increased and decreased.

The application discloses a kind of precision hardware fatigue damage detection method and system, it is related to precision manufacturing technical field, method includes: obtaining the theoretical magnetic memory signal of reference block;The reference block is measured to magnetic memory signal, and reference measurement signal is obtained;According to the reference measurement signal and the theoretical magnetic memory signal, adjustment factor reflecting overall measurement deviation is calculated;According to the adjustment factor, initial magnetic memory signal is corrected, and target magnetic memory signal is obtained, and the initial magnetic memory signal is measured to obtain by magnetic memory signal to the precision hardware of test;According to the target magnetic memory signal, fatigue damage assessment processing is carried out to the precision hardware of test, and fatigue damage assessment result is obtained.The application realizes fatigue damage detection, and improves accuracy.

This invention relates to the field of magnetic memory, and particularly to a method and apparatus for manufacturing a TMR sensor. The method involves placing a metal layer photomask in the correct position and using this photomask to create a bottom metal layer connected to a bottom pad. An MTJ element layer is then placed on the bottom metal layer. A top metal layer, connected to a top pad, is then created on the MTJ element layer using a reverse-positioned metal layer photomask, resulting in a device precursor. Connection windows are then created on the top and bottom pads of the device precursor to obtain the TMR sensor. This invention designs the patterns of the top and bottom metal layers to be identical but inverted. Using only one metal layer photomask, the top and bottom metal layers can be set at different rotation positions, reducing production costs and improving production efficiency.