380 results about "Magnetic memory" patented technology

The invention discloses a crane steel wire rope flaw detection device and a flaw detection method, and belongs to the technical field of nondestructive flaw detection. The device comprises a magnetic memory flaw detection module and a wheel type rope climbing robot device for driving the magnetic memory flaw detection module to move along a crane steel wire rope, the magnetic memory flaw detection module comprises a hollow flaw detection shell, the flaw detection shell is longitudinally provided with a central through hole for a crane steel wire rope to penetrate through, and a plurality of giant magneto-impedance effect magnetic sensors are evenly arranged in the flaw detection shell in the circumferential direction of the central through hole. Therefore, a sensor array used for detecting the leakage magnetic field intensity of the crane steel wire rope is formed, and the giant magneto-impedance effect magnetic sensors are arranged in a coplanar mode. The device is mainly based on the giant magneto-impedance effect magnetic sensor and the metal magnetic memory principle, extremely weak magnetic nondestructive testing is conducted on the crane steel wire rope, and the device is convenient to use, high in detection precision, simple in structure and suitable for various steel wire rope detection environments.

The invention belongs to the technical field of coiled tubing life prediction, and particularly discloses a coiled tubing fatigue damage degree prediction method and a coiled tubing remaining life prediction method. The fatigue damage degree prediction method comprises the following steps: carrying out a bending fatigue test on a coiled tubing sample, and collecting a series of magnetic memory signals; preprocessing the series of magnetic memory signals and extracting a plurality of magnetic memory signal characteristic values from the magnetic memory signals; sequentially arranging the plurality of magnetic memory signal characteristic values according to the acquisition time to serve as an original data column, and establishing a grey prediction model; based on the grey prediction model and in combination with the Miner fatigue linear accumulation theory, a coiled tubing fatigue damage degree prediction model representing the relation between the magnetic memory signal characteristic value and the coiled tubing fatigue damage degree is established; and based on the established model, predicting the fatigue damage degree of the oil pipe to be detected according to the detected characteristic value of the magnetic memory signal. The fatigue damage degree prediction method can conveniently and efficiently predict the fatigue damage degree of the oil pipe to be detected.

The invention provides a physical unclonable function magnetic device and an application method thereof, the magnetic device comprises a plurality of magnetic storage units arranged in an array and a control circuit, and each magnetic storage unit comprises a spin orbit moment layer and at least one magnetic tunnel junction arranged on the spin orbit moment layer; and the control circuit is used for applying a composite reconstruction signal with oscillation change to the magnetic memory units, and forming a superposed physical field with oscillation change at the magnetic memory units so as to enable the resistance state of the magnetic tunnel junction to generate oscillation change to realize PUF reconstruction of the plurality of magnetic memory units arranged in an array. In order to solve the problems of limited CRP generated by the PUF circuit and low resource utilization rate, the physical field with oscillation change is formed through the composite reconstruction signal, so that the PUF of the magnetic tunnel junction of the SOT-MRAM generates random oscillation change, the PUF of the magnetic device can be reconstructed, the reconstructed magnetic device can generate new CRP, and the resource utilization rate is improved.

The invention provides a magnetic memory, a magnetic memory unit and a magnetic memory system. The magnetic memory at least comprises a first antiferromagnetic layer, a free layer, a barrier layer, a reference layer and a second antiferromagnetic layer which are sequentially stacked from bottom to top, wherein the magnetic moment direction of the reference layer is a first direction, the magnetic moment direction of the free layer is a second direction, and the first direction is perpendicular to the second direction; when the magnetic memory is in a first mode, applying a current parallel to a second direction to the first antiferromagnetic layer, so that the magnetic moment direction of the free layer is changed from the second direction to a direction parallel to the first direction, and the magnetic memory is switched from the first mode to the second mode; the first mode is used for detecting a magnetic field around the magnetic memory; the second mode is used for data storage. Therefore, the magnetic memory can be switched from the sensing mode to the storage mode, and the occupied space and cost can be saved at the same time.

A magnetic memory device includes a spin-orbit interaction active core having a number of layers stacked along a longitudinal axis and a magnetic junction extending around the longitudinal axis and substantially surrounding at least a portion of the spin-orbit interaction active core. The magnetic junction includes a free layer, a reference layer, and a tunnel barrier layer between the free layer and the reference layer.

A magnetic memory device may include a pinned magnetic pattern and a free magnetic pattern which are stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a capping pattern on the free magnetic pattern, and a non-magnetic pattern between the free magnetic pattern and the capping pattern. The free magnetic pattern may be between the tunnel barrier pattern and the capping pattern. The non-magnetic pattern may include a first non-magnetic metal and boron, and the capping pattern includes a second non-magnetic metal. A boride formation energy of the second non-magnetic metal may be higher than a boride formation energy of the first non-magnetic metal.

The invention discloses a steel box girder hidden damage identification method based on a magnetic memory effect, and relates to the technical field of bridge structure health monitoring, and the method comprises the steps: employing a magnetic memory detector, arranging a probe to detect the normal component of a leakage magnetic field on the surface of a steel box girder, carrying out the normalization processing of an original signal in order to eliminate the influence of an initial residual magnetic field, calculating to obtain a benchmark magnetic signal variable quantity; detecting lines are arranged on the upper flange, the lower flange and the web of the steel box girder at the interval of 5mm, and detecting points are arranged on the detecting lines at the interval of 1mm; carrying out graded loading on the steel box girder, synchronously acquiring strain data and magnetic memory signal data, and constructing a structured data set; a magnetic signal variation distribution curve is drawn according to the data set, the curve form is analyzed to recognize a local extreme point, and the position of the extreme point is a local buckling damage area; and verifying the consistency of the position of the extreme point and the actual buckling damage area by comparing the final damage form of the test piece, so as to realize high-precision positioning of the hidden damage.

A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

The invention relates to a perpendicular anisotropic magnetic memory based on rare earth doped antiferromagnetic, which comprises a thin film structure, and the thin film structure sequentially comprises a buffer layer, a heavy metal layer, a perpendicular magnetic anisotropic layer, a rare earth doped antiferromagnetic layer and a protective layer from bottom to top, according to the invention, the magnetic texture is changed by doping rare earth elements into the collinear antiferromagnetic to break the symmetry of the system, and the spin-orbit torque is utilized to drive the magnetic state of the memory device with perpendicular magnetic anisotropy to overturn only by means of current under the condition of no external field assistance. The method provides a new implementation path for a low-power-consumption and high-density spin storage technology, has a good application prospect, and is expected to promote actual development and application of novel magnetic storage devices in the future.

The invention relates to the technical field of pipeline detection, in particular to an intelligent non-contact pipeline detection system based on a metal magnetic memory effect, and provides the following scheme: dividing a to-be-detected pipeline into a plurality of grid units, obtaining self-leakage magnetic field data of each grid, constructing a magnetic moment matrix, and forming a magnetic field matrix; according to the method, abnormal grids are positioned based on a magnetic field matrix, a grid with the highest abnormal score is selected from a spatially continuous abnormal set through screening logic to serve as a seed grid, authenticity of adjacent abnormal grids is verified step by step in combination with a local inversion window and magnetic flux continuity constraint, false anomalies caused by magnetic flux diffusion or noise are eliminated, and the accuracy of the abnormal grids is improved. Performing magnetic moment matrix updating on the confirmed real defect grid; and finally, calculating a magnetic gradient modulus by utilizing the updated magnetic moment matrix and determining a damage grade. Adjacent lattice infection can be effectively inhibited, the defect positioning precision and the damage evaluation reliability are improved, and the method is suitable for a non-contact inspection scene of an in-service pipeline.

A bilayer film of a magnetic body and an insulator has an antiferromagnetic layer having a hexagonal crystal structure and at least one surface of which is the (10-10) surface of an antiferromagnetic body, and an insulator layer containing two or three or four atoms laminated on the (10-10) surface of the antiferromagnetic layer. A bilayer film of a magnetic body and an insulator has an antiferromagnetic layer having a hexagonal crystal structure and at least one surface of which is the (0001) surface of an antiferromagnetic body, and an insulator layer containing two or three or four atoms laminated on the (0001) surface of the antiferromagnetic layer. The tunneling magnetoresistive element has a second antiferromagnetic film layer laminated on the insulator of the bilayer film. The magnetic memory includes a plurality of the tunneling magnetoresistive elements.

The invention relates to the technical field of steel structure quality detection equipment, in particular to a metal magnetic memory detection device for detecting a steel structure beam-column joint welding seam, and aims to solve the problem that an existing magnetic memory detection device for a steel structure welding seam is low in universality and flexibility. The metal magnetic memory detection device for detecting the steel structure beam-column joint welding seam comprises a magnetic memory probe, the device further comprises a holding tool mechanism, an adjusting mechanism and a detection mechanism. The holding tool mechanism is detachably connected with the I-shaped steel; the adjusting mechanism is detachably connected with the holding tool mechanism. The holding tool mechanism comprises two moving assemblies, a plurality of mounting rods and two stabilizing assemblies. The displacement assembly comprises a plurality of connecting rods, a driving assembly and a plurality of buffering pieces. According to the metal magnetic memory detection device for detecting the steel structure beam-column joint welding seam, the magnetic memory probe can be accurately moved to any position of the welding seam, and the metal magnetic memory detection device can be flexibly used according to different working conditions.

The invention provides a magnetic storage unit and device based on signal time delay. The unit comprises a first spin orbit moment layer and a first magnetic tunnel junction arranged on the first spin orbit moment layer. The distances between the first magnetic tunnel junction and the two ends of the first spin orbit moment layer are respectively a first distance and a second distance, and the first distance and the second distance are not equal; respectively inputting a first pulse signal and a second pulse signal from two ends of the first spin orbit moment layer along the first distance and the second distance; and the first pulse signal and the second pulse signal form a first write-in spin transfer torque current at the first magnetic tunnel junction due to signal time delay, so that the magnetic moment of a free layer of the first magnetic tunnel junction is subjected to deterministic overturning under the action of the first write-in spin transfer torque current. Deterministic writing of the magnetic tunnel junction can be realized without an additional auxiliary magnetic field, the device structure is simplified, and the area and power consumption overhead are reduced.

The invention provides a magnetic memory and a data reading method of the magnetic memory, and relates to the technical field of semiconductors, and the magnetic memory comprises a read signal generation circuit, a hysteresis comparison circuit and a switch sequence circuit which are electrically connected with one another; the read signal generation circuit comprises a data magnetic storage unit for generating a data signal and a reference magnetic storage unit for generating a reference signal; the read signal generation circuit inputs a data signal into the switch sequential circuit, inputs a reference signal into a first input end of the hysteresis comparison circuit, and determines a hysteresis interval of the hysteresis comparison circuit through the reference signal; the switch sequential circuit is used for resetting the output end of the hysteresis comparison circuit to be a first logic signal before each time of data reading, and inputting a data signal to the second input end of the hysteresis comparison circuit, so that the hysteresis comparison circuit performs hysteresis comparison on the data signal and a hysteresis interval; the output end of the hysteresis comparison circuit outputs a data reading result, and the layout area and the power consumption are reduced by introducing the hysteresis comparison circuit.

The present disclosure provides a unidirectional write magnetoelectric coupled magnetic memory, comprising: a spin-orbit coupling layer; a magnetoelectric coupling layer unit, comprising a first magnetoelectric coupling layer and a second magnetoelectric coupling layer which are symmetrically formed on the upper and lower sides of the spin-orbit coupling layer, respectively; a free layer unit, comprising a first free layer and a second free layer which are symmetrically formed outside the first magnetoelectric coupling layer and the second magnetoelectric coupling layer, respectively; a barrier layer unit, comprising a first barrier layer and a second barrier layer which are symmetrically formed outside the first free layer and the second free layer, respectively; a reference layer unit, comprising a first reference layer and a second reference layer which are symmetrically formed outside the first barrier layer and the second barrier layer, respectively; a pinning layer unit, comprising a first pinning layer and a second pinning layer which are symmetrically formed outside the first reference layer and the second reference layer, respectively; a top electrode unit; a read electrode unit; and a write electrode unit. Further provided are a manufacturing method for the magnetic memory and an array connection circuit of the magnetic memory.

A 3D magnetic memory device includes a stack having dielectric layers and silicon-based layers arranged alternately, and a magnetic material channel formed through the stack. The channel has a first diameter at which it extends through the silicon-based layer and a second diameter at which it extends through the dielectric layer. Pinning sites defined by layers are formed in the channel, each pinning site configured to store one magnetic potential. A first metal layer is disposed on the first end of the channel and the stack. A magnetic tunnel junction (MTJ) and a first electrode are arranged on the first metal layer at a distance from each other. The first metal layer is configured as a spin-orbit torque (SOT) orbit, or the second metal layer is configured as a SOT orbit, where the second end of the channel and the stack are disposed on the second metal layer.

The invention provides a pipeline welding seam detection method and device based on magnetic memory. The method comprises the steps that magnetic memory signals of a tangential component and a normal component of a pipeline welding seam area are collected, and first magnetic charge density distribution caused by metal phase change and second magnetic charge density distribution caused by residual stress are calculated respectively based on amplitude distribution characteristics of the magnetic memory signals; performing coupling superposition on the distribution of the first magnetic charge density and the distribution of the second magnetic charge density to obtain total magnetic charge density distribution representing stress and phase change coupling; according to the total magnetic charge density distribution, calculating predicted magnetic signal distribution of the welding seam area through integration; and comparing and analyzing the predicted magnetic signal distribution and the magnetic memory signal, and when an inner peak and an outer peak appear in a normal component in a comparison result and an extreme value appears in a tangential component at a corresponding position, determining that a crack defect exists in a welding seam area, and generating a welding seam detection result. According to the method, the multi-parameter coupling effect can be comprehensively considered, the weld crack defect is accurately identified through comparative analysis, and the detection precision is improved.

According to one embodiment, a magnetic memory includes first magnetic members extending in a first direction, first wirings extending in a second direction and spaced from each other in a third direction, and a second magnetic member. The second magnetic member has a first portion above the first wirings, a second portion extending in the second direction between adjacent first wirings, a third portion below the plurality of first wirings, and a fourth portion with a part inside an upper end portion of a first magnetic member. A third wiring extends in the third direction and is connected to lower end portions of first magnetic members.

The present invention provides a magnetic storage device that can suppress the degradation of the characteristics of a magnetoresistive element, and a method for manufacturing a magnetic storage device. [Solution] A magnetic memory device 1 of one embodiment includes a first wiring 21 extending in a first direction X, a second wiring 28 extending in a second direction Y intersecting the first direction and provided above the first wiring, a first memory cell provided between the first wiring and the second wiring, a third wiring 21 extending in the first direction and provided above the second wiring, and a second memory cell provided between the second wiring and the third wiring. The first memory cell includes a first selector body 24, a first conductor 26, and an MTJ body 27 provided on the upper surface of the first conductor. The second memory cell includes a second selector body 24, a second conductor 26, and a second MTJ body 27 provided on the upper surface of the second conductor. The upper surface of the first conductor is flattened.

Provided are a magnetic memory device, a method of manufacturing the magnetic memory device, and a memory apparatus including the magnetic memory device. The magnetic memory device includes a spin-orbit torque (SOT) generation layer configured to generate a SOT, a spin current transfer layer on a lower surface of the SOT generation layer, and a tunneling magnetoresistance layer on a lower surface of the spin current transfer layer and including a free layer, a tunnel barrier layer, and a pinned layer. The spin current transfer layer is configured to transfer a spin current generated from the SOT generation layer to the free layer.

The invention discloses pure-phase bismuth ferrite-strontium titanate ceramic as well as a preparation method and application thereof, and belongs to the field of lead-free ferroelectric ceramic. Comprising the following steps: filling pure-phase BFO-STO precursor powder prepared by a hydrothermal method into a graphite mold, controlling the heating rate to a sintering temperature, and sintering under the conditions of external pressure and heat preservation, so as to finally prepare the BFO-STO ceramic. The BFO-STO ceramic is prepared through SPS sintering, volatilization of Bi < 3 + > and generation of impure phases are effectively inhibited, ferroelectric, dielectric and magnetic properties of the BFO ceramic are effectively improved, and possibility is provided for practical application of the BFO-STO ceramic in the fields of functional sensors, magnetic memories, piezoelectric generators, high-temperature inductors and the like.

This magnetization rotating element comprises a wiring layer and a first ferromagnetic layer connected to the wiring layer, and the wiring layer includes a quasicrystal.

In a method of manufacturing a magnetic memory device, a temporary shift cancel layer including X metal atoms and Y metal atoms as free atoms may be formed. A magnetic tunnel junction layer may be formed on the temporary shift cancel layer. The magnetic tunnel junction layer and the temporary shift cancel layer may be etched to form a magnetic tunnel junction pattern and a temporary shift cancel pattern. The Y metal atoms redeposited between the magnetic tunnel junction pattern and the temporary shift cancel pattern may be oxidized to form metal oxide. The Y metal atoms of the temporary shift cancel pattern may be substituted with Z metal atoms to form a shift cancel pattern. The Y metal atoms may have higher oxidizing than the Z metal atoms. The Z metal atoms may have a higher reduction potential than the Y metal atoms.

A magnetic memory device includes a substrate, a base insulating film on the substrate, a magnetic tunnel junction element including first and second magnetic patterns and a tunnel barrier pattern therebetween on the base insulating film, an upper electrode pattern on an upper face of the magnetic tunnel junction element, a capping structure including a first to third capping films sequentially stacked on a side face of the magnetic tunnel junction element, and a conductive line on both the upper electrode pattern and the capping structure and connected to the upper electrode pattern. An uppermost end of the second capping film is higher than an uppermost end of the first capping film, an uppermost end of the third capping film is lower than the uppermost end of the first capping film, and the second capping film includes a material different from respective materials of the first and third capping films.

To provide a magnetoresistive element, a magnetic memory, and a magnetic sensor that are resistant to the influence of external forces such as heat and external magnetic fields and have high magnetization stability.SOLUTION: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer, and an underlayer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer is located between the underlayer and the non-magnetic layer. The underlayer contains Ta. The first ferromagnetic layer is expressed as CoαFeβXγPtδ, where X is boron or carbon, and α+β+γ+δ=1, α≥β>0, and δ≤0.3 are satisfied. The easy axis of magnetization of the first ferromagnetic layer is a first in-plane direction perpendicular to a stacking direction, and the anisotropy field of the first ferromagnetic layer in a second direction is 50 Oe or more. The second direction is perpendicular to the stacking direction and the first direction.SELECTED DRAWING: Figure 1

The invention provides a comprehensive detection system and method for steel plate defects, and relates to the technical field of steel plate defect detection, the comprehensive detection system comprises an infrared sensor, a synchronous laser encoder, a Hall sensor, a control device, an image acquisition device, a semi-shielding excitation device and a server, and the infrared sensor is connected with the control device. According to the comprehensive detection system and method for the steel plate defects, key subsystems such as image acquisition, magnetic flux leakage detection and magnetic memory detection are organically integrated through modular and complete-set design, and a set of detection device which is high in industrialization degree and flexible to deploy is formed under the assistance of a multi-stage filtering noise reduction and intelligent image processing algorithm. The device not only can stably operate under complex working conditions, but also can quickly position and classify internal and external defects of the steel plate, so that the detection accuracy is remarkably improved, and the risks of missing detection and error detection are effectively reduced, thereby meeting the strict requirements of an efficient production line on quality control.

The invention relates to the technical field of semiconductors, and discloses a magnetic storage structure and a magnetic memory, the magnetic storage structure at least comprises a first magnetic storage unit, and the first magnetic storage unit at least comprises at least two read transistors, at least two magnetic storage devices and at least one write transistor; each reading transistor is arranged on a reading channel of the corresponding magnetic storage device, each writing transistor is arranged on a writing channel shared by at least two magnetic storage devices, and orthographic projections of any reading transistor, any writing transistor and at least one magnetic storage device in the first direction are partially or completely overlapped; the read transistor and / or the write transistor are / is a thin film transistor, and the channel of the thin film transistor is partially or completely overlapped with the orthographic projection of the at least one magnetic memory device in the first direction; the magnetic memory device is a spin-orbit moment magnetic memory device. The size of the magnetic storage unit is reduced, so that the layout area is further saved, and the storage density is improved.

The invention provides a magnetic memory and a data writing method of the magnetic memory, and relates to the technical field of semiconductors. The magnetic memory at least comprises a plurality of magnetic memory units which are arranged in an array, word lines which correspond to and are electrically connected with each row of magnetic memory units, and a row selection module which is electrically connected with each row of magnetic memory units through the word lines, wherein the same column of magnetic storage units comprises first magnetic storage units and second magnetic storage units, and at least one of the first magnetic storage units and the second magnetic storage units is arranged in multiple rows; when address data is input into the row selection module, the row selection module selects and writes the first logic data into all the first magnetic storage units in the same column, and then selects and writes the second logic data into all the second magnetic storage units in the same column; the first logic data and the second logic data are opposite in logic, so that power consumption and time overhead caused by frequent switching of the written data are optimized, and the writing performance is remarkably improved.

This invention discloses a high-coercivity hard magnetic oxide semiconductor thin film with perpendicular magnetic anisotropy and its preparation method. The invention employs a multi-target alternating gradient film preparation process, using NiFeO4 and NiCo2O4 targets for alternating sputtering to prepare NiCo2-xFexO4-NiCo2O4 gradient thin films. Experimental results show that the obtained films exhibit a coercivity as high as 1T and good conductivity, with an anomalous Hall resistivity reaching 52.5 μΩ·cm. This preparation method has the advantages of simplicity and low cost, providing new possibilities for the development of magnetic storage devices. This method has significant application potential for realizing high-density, high-speed, and low-power magnetic storage devices, contributing to the development and application of magnetic storage technology.

A method for forming a magnetic memory device includes the steps of forming a magnetic tunneling junction (MTJ) stack on a bottom electrode layer, forming a dielectric cap layer on the MTJ stack, and forming a metal cap layer on the dielectric cap layer, wherein the metal cap layer comprises a plurality of first metal layers and second metal layers alternately stacked on the dielectric cap layer.