45 results about "Magnetic memory" patented technology

Provided are a magnetic memory device, a method of manufacturing the magnetic memory device, and a memory apparatus including the magnetic memory device. The magnetic memory device includes a spin-orbit torque (SOT) generation layer configured to generate a SOT, a spin current transfer layer on a lower surface of the SOT generation layer, and a tunneling magnetoresistance layer on a lower surface of the spin current transfer layer and including a free layer, a tunnel barrier layer, and a pinned layer. The spin current transfer layer is configured to transfer a spin current generated from the SOT generation layer to the free layer.

The utility model discloses a filter press relates to wastewater treatment technical field. The filter press includes main support, a plurality of filter plate subassembly, filter piece, liquid inlet pipeline and vibration joint spare. The main support includes the first support and the second support who arranges at interval along the first direction, and a plurality of filter plate subassembly are arranged along the first direction between the first support and the second support, and the filter chamber that is equipped with along the second direction extends on the filter plate subassembly, and the filter piece is installed in the filter chamber inside along the second direction, and the liquid inlet pipeline is worn in the main support along the first direction, and is linked together with the filter chamber, and the vibration joint spare is set up in the main support and includes the magnetic memory alloy drive assembly and the action spare who arranges along the first direction, and the action spare is connected with the magnetic memory alloy drive assembly, and the magnetic memory alloy drive assembly can drive the action spare and displace along the first direction, and then impact the main support. The filter press is used for simplifying the mechanical structure of vibration mechanism in the filter press, and the installation use and maintenance maintenance of vibration mechanism are convenient.

This invention discloses a novel magnetic flaw detection device and method for scraper conveyor chain deformation, relating to the field of scraper conveyor technology. The device includes a magnetic flaw detection sensor module, an analog-to-digital conversion acquisition module, an intrinsically safe control box, magnetic nails, and a terminal display platform. The magnetic flaw detection sensor module includes a high-sensitivity GMI magnetic sensor array embedded in a plate, used to detect magnetic field disturbance signals generated by the metal magnetic memory effect caused by chain deformation in real time during scraper conveyor chain operation. By utilizing the high-sensitivity GMI magnetic flaw detection sensor, it has a good detection effect on early-stage minute deformation defects of the chain, ultimately enabling online assessment and accurate location of scraper conveyor chain damage. This allows maintenance personnel to obtain accurate information on early chain deformation in a timely manner, thus solving the problem that conventional detection methods in the prior art often only detect abnormalities after damage accumulates to a critical value, making it difficult to provide timely and accurate decision-making basis for preventive maintenance.

Magnetic storage (100, 100', 100'', 100''', 200, 200', 250, 300, 300', 300'', 300''', 300'''', 300''''), comprising the following: a plurality of magnetic contacts (110, 110', 110'', 110''', 210, 260, 310, 310', 310'', 310''', 310''''), wherein each of the plurality of magnetic contacts (110, 110', 110'', 110''', 210, 260, 310, 310', 310'', 310''', 310''') has a data storage layer (112, 112', 112'', 112''', 212, 212''') wherein the data storage layer (112, 112', 112'', 112''', 212) is magnetic; and at least one active spin-orbit coupling layer, active SO layer (120, 120', 120'', 120''', 220, 270, 320, 320', 320', 320'', 320''''), adjacent to the data storage layer (112, 112', 112'', 112''', 212,) of the magnetic contact (110, 110', 110'', 110''', 210, 260, 310, 310', 310'', 310''', 310'''), wherein the at least one active SO layer (120, 120', 120'', 120''', 220, 270, 320, 320', 320'', 320''', 320'''') is configured so that it exerts an SO torque on the data storage layer (112, 112', 112'', 112''', 212) due to a current,which is connected by the at least one active SO layer (120, 120', 120'', 120''', 220, 270, 320, 320', 320''', 320'''', 320'''') in a direction substantially perpendicular to a direction between the at least one active SO layer (120, 120', 120'', 120''', 220, 270, 320, 320', 320'', 320''', 320'''') and the data storage layer (112, 112', 112'', 112''', 212,) of a magnetic contact (110, 110', 110'', 110''', 210, 260, 310, 310', 310'', 310'''', 310'''') of the majority of magnetic contacts (110, 110', 110'', 110'''', 210, 260, 310, 310', 310'', 310''', 310''') nearest to the at least one active SO layer (120, 120', 120'', 120''', 220, 270, 320, 320', 320'', 320''', 320''''); Without the current, at least one active SO layer (120, 120', 120", 120"', 220, 270, 320, 320', 320", 320"', 320"") is also configured to exert no SO torque on the data storage layer (112, 112', 112", 112"', 212), where the data storage layer (112,112', 112", 112"', 212) is configured so that it can be switched using at least the SO torque, , wherein at least one active SO layer (120, 120', 120", 120"', 220, 270, 320, 320', 320", 320"', 320"") extends over at least two of the plurality of magnetic contacts (110, 110', 110", 110"', 210, 260, 310, 310', 310", 310"', 310"").

This application provides a read circuit for a magnetic storage chip and an MRAM. The read circuit includes: a storage circuit, including a memory bit under test and a first transistor, the memory bit under test including a first free layer and a first reference layer; a reference circuit, including a reference memory bit and a second transistor, the reference memory bit including a second free layer and a second reference layer; a first interconnect line, including a first sub-connection line and a second sub-connection line, the first sub-connection line being connected to the first free layer; a second interconnect line, including a third sub-connection line and a fourth sub-connection line, the third sub-connection line being connected to the first reference layer through the first transistor; a first interconnect line, the second sub-connection line being connected to the second reference layer through the first interconnect line and the second transistor; and a second interconnect line, the fourth sub-connection line being connected to the second free layer through the second interconnect line. This application solves the problem in the prior art where designing two sets of read logic circuits in a single chip results in an excessively large chip area and high read power consumption.

The present invention relates to a magnetic memory device, and more specifically, to a loop-type magnetic track, wherein the magnetic track comprises a first portion and a second portion arranged in a counterclockwise direction; a first conductive line on the upper surface of the first portion; and a second conductive line on the bottom surface of the second portion. The magnetic track comprises a lower magnetic layer, a spacer layer, and an upper magnetic layer stacked sequentially, wherein each of the first and second conductive lines comprises a heavy metal, and each of the first and second conductive lines is configured to generate a spin-orbit torque by a current flowing therein, and the magnetic domains within the magnetic track move in a clockwise or counterclockwise direction by the spin-orbit torque.

The application discloses a kind of magnetic random memory based on nonlinear spin polarization and its implementation method, belong to magnetic random memory field.The spin orbit layer of the present application adopts magnetic material with perpendicular magnetic anisotropy, when writing, write current is applied in plane by writing electrode, due to nonlinear spin polarization effect, the magnetization vector of spin orbit layer is greatly periodic oscillation, after current is cut off, magnetization vector is determined to relax to the nearest steady state from current phase, information writing is realized;When reading, read circuit shows the voltage state corresponding to the state of magnetization vector, information reading is realized;The present application solves the problem of material symmetry restriction and process sensitivity faced by magnetic memory device when determining flip without external field.The present application widens material selection range, realizes the determining flip without external magnetic field, improves interface efficiency and write energy efficiency, and simplifies device process structure;The present application is applied to MRAM array design and peripheral integrated circuit.

This invention provides a novel magnetic flaw detection method and apparatus for scraper conveyor chain wear and cracks, belonging to the field of non-destructive testing technology. It aims to solve the problems of existing detection methods being unable to identify early defects, having ambiguous classifications, and being unable to assess the degree of damage. This method is based on the magnetic memory effect of metals, requiring no external magnetic field or chain surface pretreatment. Through signal acquisition, scraper signal elimination, defect signal processing and identification, damage degree assessment, defect location, and early warning control, it achieves online accurate detection and chain breakage early warning of early minor wear and cracks in the scraper conveyor chain. The supporting apparatus provides hardware support for the method's implementation, including a magnetic flaw detection sensor module, an analog-to-digital conversion acquisition module, an intrinsically safe control box, a power supply module, a terminal display platform, magnetic nails, and an alarm, adaptable to high-load, continuous operation scenarios in underground coal mines. This invention can accurately distinguish defect types, quantify damage degrees, and achieve defect location and tracking, ensuring the safe and stable operation of the scraper conveyor.

A magnetic memory device includes a pinned magnetic pattern, a tunnel barrier pattern, a free magnetic pattern, a diffusion barrier pattern, a non-magnetic pattern and a capping pattern, which are sequentially stacked on a substrate. The diffusion barrier pattern includes a first non-magnetic metal and oxygen. The non-magnetic pattern includes a second non-magnetic metal and oxygen. An oxide formation energy of the first non-magnetic metal is lower than an oxide formation energy of the second non-magnetic metal.

This invention provides a magnetic memory and its fabrication method. The method includes: providing a substrate comprising a bottom interconnect layer and a magnetic storage layer stacked sequentially from bottom to top, the magnetic storage layer including a magnetic tunnel junction, the bottom interconnect layer including a bottom electrode, and the magnetic tunnel junction electrically connected to the corresponding bottom electrode; sequentially forming a top electrode layer and a top stop layer on the substrate, the top electrode layer being made of a transparent conductive material; etching the top electrode layer and the top stop layer to form a top electrode electrically connected to the magnetic tunnel junction; depositing a dielectric material covering the top electrode on the substrate to form a dielectric protective layer; etching the dielectric protective layer and removing the top stop layer to form a top trench and logic vias, the bottom end of the logic vias communicating with the corresponding bottom electrode, and the top end of the logic vias communicating with the top trench; filling the top trench and logic vias with conductive material to form a top interconnect structure. This invention can improve the yield of the memory.

To prevent a decrease in magnetic anisotropy modulation efficiency while improving crystallinity of a magnetic layer in a magnetic memory element. A magnetic memory element includes a storage layer having a variable magnetization direction and a voltage-controlled magnetic anisotropy effect, a reference layer having an invariable magnetization direction, a tunnel barrier layer disposed between the storage layer and the reference layer, and an underlayer disposed below the storage layer. The storage layer included in the magnetic memory element is configured to have a B content of 10 at % or less. The underlayer included in the magnetic memory element is configured to have an orientation different from that of the tunnel barrier layer or to be in an amorphous state.

A magnetic memory device includes a pinned layer pattern, a free layer pattern on the pinned layer pattern, a tunnel barrier layer pattern between the pinned layer pattern and the free layer pattern, and an oxide layer pattern which is spaced apart from the tunnel barrier layer pattern with the free layer pattern interposed therebetween, and includes tantalum (Ta) oxide, in which the free layer pattern includes a first sub-free layer and a second sub-free layer which are stacked in sequence, a thickness of the second sub-free layer is smaller than that of the first sub-free layer, and the second sub-free layer includes a material having a higher boron affinity than the first sub-free layer.

A sputtering apparatus and a method of manufacturing a magnetic memory device can be provided, the sputtering apparatus including: a chamber; a gas supply source configured to supply a first inert gas and a second inert gas to the chamber, the first inert gas and the second inert gas having first and second evaporation points, respectively, wherein the first evaporation point is higher than the second evaporation point; a plurality of sputtering guns in an upper portion of the chamber; a chuck in a lower portion of the chamber and facing the plurality of sputtering guns, the chuck configured to receive a substrate thereon; and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature lower than the first evaporation point and higher than the second evaporation point.

This invention discloses a riser drilling internal detector, comprising a drill pipe connection assembly, an instrument compartment, a support rod, a variable diameter spring assembly, and a sensor array. The instrument compartment is located at the bottom of the drill pipe connection assembly, and the variable diameter spring assembly is located outside the instrument compartment. The sensor array is mounted on the variable diameter spring assembly. The variable diameter spring assembly can deform to change its diameter to adapt to changes in the inner diameter of the riser main pipe. The sensor array can closely adhere to the inner wall of the riser main pipe. This invention aims to achieve real-time and efficient detection of the inner wall of a 21-inch riser main pipe using drilling technology. This device adopts a bow-spring type adaptive variable diameter structure, combined with a 24-channel metal magnetic memory sensor array. The internal detector's diameter change range is 480-510 mm, enabling high-resolution scanning of defects such as inner wall corrosion, cracks, and stress concentration in a dynamic drilling environment. This overcomes the problems of complex structure, limited diameter change range, and low detection efficiency in existing technologies.

This application provides a non-destructive testing method and system for steel based on multimodal data, relating to the field of materials testing technology. The method includes identifying the starting moment of the steel entering the plastic deformation stage based on the acoustic emission signal sequence during the stress process, and determining the time interval of the increasing activity of the acoustic emission signal; acquiring the metal magnetic memory signal and surface strain data within the time interval; further determining the location of the magnetic field gradient anomaly and the location of the strain concentration region of the steel; determining the spatial overlap region of the multimodal signals; performing multi-scale decomposition on the acoustic emission signals within the spatial overlap region of the multimodal signals, determining the cumulative degree of irreversible changes in the microstructure of the steel based on the abrupt change characteristics in the decomposed signals, and subsequently determining the test result of the steel. This application can realize dynamic monitoring of the transition of steel from the elastic stage to the plastic deformation stage during the stress process, accurately identifying changes in the internal microstructure of the steel and spatially locating them.

The embodiment of the application relates to the technical field of pipeline component detection, and provides a large-diameter high-temperature pipeline special-shaped component phased array noise reduction detection method, first, a three-dimensional sound field model of a target component is constructed, and probe and special noise reduction module parameters are determined through simulation optimization; then, a sound velocity-temperature model is established through a high-temperature test, and calibration and compensation parameters are generated in real time according to the sound velocity-temperature model; then, a multi-probe synchronous detection system is built, parameters are loaded, and phased array, TOFD and magnetic memory signals are synchronously collected; finally, the signals are subjected to noise reduction, imaging, fusion analysis, accurate quantitative grading and creep damage assessment of defects are completed. The application realizes full coverage, high signal-to-noise ratio detection of special-shaped components under high temperature, effectively improves the micro-defect detection rate and quantitative precision, and can synchronously assess the creep damage state.

The present disclosure relates to a magnetic tunnel junction with double fixed layers, a magnetic memory chip, and a manufacturing method thereof. The present disclosure provides a magnetic tunnel junction with double fixed layers, a magnetic memory chip, and a manufacturing method thereof, including a structure of a bottom fixed layer formed by three layers of ferromagnetic thin film structures coupled in an anti-parallel manner, and then, from the perspective of the coupling magnetic field of the bottom fixed layer to the free layer, a thickness and a material of each layer of the ferromagnetic thin film structure of the above-mentioned structure are provided, and, on the basis of the bottom fixed layer, a structure of the top fixed layer is further provided. The present disclosure provides a magnetic tunnel junction with double fixed layers, a magnetic memory chip, and a manufacturing method thereof.

In one aspect, a magnetic memory cell is provided. The magnetic memory cell includes a magnetic memory element with at least one magnetic layer configured to store information in distinct magnetization states. The magnetic layer generates a stray magnetic field corresponding to its magnetization state. A magnetic field detection device is positioned in proximity to the magnetic memory element to detect variations in the stray magnetic field. The detection device includes a magnetostrictive and piezoelectric or a piezomagnetic and piezoelectric layer assembly. The magnetostrictive or piezomagnetic layer undergoes mechanical deformation in response to stray field changes, while the piezoelectric layer generates an electrical signal representing the stored information. A writing mechanism is configured to alter the magnetization state of the magnetic layer, enabling reliable data storage and retrieval.

The application provides a TCP-based communication system between distributed heterogeneous languages and a control method thereof, wherein an external flowchart running module is used for customizing attributes and functions of nodes; an internal node running module determines functions of a rendering window and nodes in a tree table in a form of parameter transmission, and then controls functions of the system; a data stream running module comprises a TCP / IP protocol and a computer magnetic memory; the external flowchart running module and the data stream running module communicate with each other through a view layer, and the internal node running module and the data stream running module communicate with each other through a data layer; the application separates the view layer and the data layer of an industrial simulation software, determines a flow through nodes and connecting lines on the view layer, exchanges data through shared memories in the data layer, exchanges data of logical nodes through TCP / IP communication, and exchanges data generated by scientific calculation through the shared memories, so that the data does not need to be saved to a disk, and the efficiency can be greatly improved.

The embodiment of the application discloses a steel wire rope defect detection method and system based on feature fusion and dimension reduction optimization, which comprises the following steps: acquiring a double-field metal magnetic memory signal of a steel wire rope; constructing a defect response term and a baseline drift term for the double-field metal magnetic memory signal based on a composite model construction method to obtain a metal magnetic memory signal analysis model; the parameters in each metal magnetic memory signal analysis model include nonlinear parameters and linear parameters; the value of the nonlinear parameters is searched iteratively based on an optimization algorithm; based on the value of the nonlinear parameters, the corresponding metal magnetic memory signal analysis model is characterized as a corresponding base matrix; the base matrix and the metal magnetic memory signal component are subjected to matrix pseudo-inverse operation to obtain the linear parameter estimation value corresponding to the value of each nonlinear parameter; based on a preset joint fitness function, the value of each nonlinear parameter and the corresponding linear parameter estimation value are evaluated to obtain optimal nonlinear parameter values and optimal linear parameter values, and defect information is output.

The present application relates to the technical fields of material measurement and detection, and discloses a kind of pressure tank truck manhole fillet weld magnetic memory scanning device and method, including cylinder, tank cover and manhole, one end of the cylinder is provided with tank cover, the middle part of tank cover is provided with manhole, the one side of tank cover is located manhole center position and is equipped with large gear, the large gear is supported in the inside of manhole by limiting support, the special mechanical structure design of the present application is aimed at narrow space in tank, by the mechanical device that can enter manhole and automatically guide along fillet weld inside, directly replace the traditional mode that detection personnel hold probe to enter harsh posture operation, improve the safety and operation efficiency of detection, adopt precision mechanical stable posture mechanism, can make probe along fillet weld, automatically keep constant distance and best fitting angle with detection surface, provide fundamental guarantee for the reliability and accuracy of detection result.

A memory device including magnetic memory elements is disclosed. The memory device includes an array of memory cells including a first region and a second region, the second region configured to store a value of a write voltage, the write voltage based on a value of a reference resistor used to determine whether a programmed memory cell is in a parallel state or an anti-parallel state; a voltage generator configured to generate a code value based on the value of the write voltage; and a write driver configured to drive a write current based on the code value, the write current being a current used to store data in the first region.

A spin-orbit torque magnetic memory circuit and layout thereof are provided, wherein the spin-orbit torque magnetic memory circuit includes a read transistor pair having two parallel read transistors, a write transistor pair having two parallel write transistors, a spin-orbit torque magnetic memory cell having a magnetic tunnel junction and a spin-orbit torque layer, wherein one end of the magnetic tunnel junction is connected to a source of the read transistor pair and the other end is connected to the spin-orbit torque layer, one end of the spin-orbit torque layer is connected to a source line and the other end is connected to a source of the write transistor pair, a read bit line connected to drains of the read transistor pair, and a write bit line connected to drains of the write transistor pair.

A method of operating a magnetic memory device includes: (i) applying a first current to a free layer of a magnetic tunnel junction structure, which includes a magnetic translation unit (MTU) extending between a first magnetic pad and a second magnetic pad, and a tunnel barrier layer and a pinned layer stacked on the MTU, so that a multi-domain is established within the MTU, (ii) applying a magnetic field to the free layer so that the magnetization direction of the MTU switches to become anti-parallel to the magnetization directions of the first magnetic pad and the second magnetic pad, (iii) applying a second current to the free layer so that a portion of the multi-domain penetrates into the first magnetic pad, and (iv) applying another magnetic field to the free layer so that the magnetization direction of the first magnetic pad switches.

This magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer connected to the spin-orbit torque wiring, in which the spin-orbit torque wiring has a length in a first direction larger than a length in a second direction when viewed from a lamination direction, and the spin-orbit torque wiring has different constituent elements between a first region and a second region having a symmetrical positional relationship with respect to a reference plane which passes through a geometric center of the first ferromagnetic layer when viewed from the lamination direction and is orthogonal to the first direction, and is asymmetrical in the first direction.

A magnetic memory device includes a magnetic tunneling junction (MTJ) stack and a capping layer on the MTJ stack. The MTJ stack includes a reference layer, a tunneling barrier layer on the reference layer, and a free layer on the tunneling barrier layer. The capping layer includes a metal under layer that is in direct contact with the free layer, an oxide capping layer on the metal under layer, and a metal protection layer on the oxide capping layer.