672 results about "Magnetic memory" patented technology

The invention relates to the technical field of nondestructive testing, in particular to a gear defect intelligent detection method and system based on a magnetic memory technology. If the service gear is an abnormal service gear, a plurality of abrupt change magnetic flux signals are calculated by moving a sliding window so as to draw a magnetic flux line trend distribution diagram, the magnetic flux line trend distribution diagram is identified and analyzed, and an actual magnetic domain structure of each quasi magnetic flux leakage characteristic point in the magnetization process is obtained; and analyzing the actual magnetic domain structure to obtain a plurality of magnetic moment vector variations of each quasi-magnetic leakage flux feature point, analyzing defect features of the service gear based on the change amplitude of the magnetization intensity of the strong magnetic field for the magnetic moment vector of the normal service gear and the plurality of magnetic moment vector variations, and finally outputting an accurate defect type. According to the invention, the stress defect of the gear can be detected, positioned and identified based on the magnetic memory technology, so that a reliable fault detection basis is provided for the maintenance of the gear, and the accuracy and sustainability of the use and maintenance of the gear are improved.

The invention discloses a crane steel wire rope flaw detection device and a flaw detection method, and belongs to the technical field of nondestructive flaw detection. The device comprises a magnetic memory flaw detection module and a wheel type rope climbing robot device for driving the magnetic memory flaw detection module to move along a crane steel wire rope, the magnetic memory flaw detection module comprises a hollow flaw detection shell, the flaw detection shell is longitudinally provided with a central through hole for a crane steel wire rope to penetrate through, and a plurality of giant magneto-impedance effect magnetic sensors are evenly arranged in the flaw detection shell in the circumferential direction of the central through hole. Therefore, a sensor array used for detecting the leakage magnetic field intensity of the crane steel wire rope is formed, and the giant magneto-impedance effect magnetic sensors are arranged in a coplanar mode. The device is mainly based on the giant magneto-impedance effect magnetic sensor and the metal magnetic memory principle, extremely weak magnetic nondestructive testing is conducted on the crane steel wire rope, and the device is convenient to use, high in detection precision, simple in structure and suitable for various steel wire rope detection environments.

The invention provides a track electronic device based on a track Hall effect and a magnetic memory device. The track electronic device comprises a substrate; the ferromagnetic / non-magnetic heterojunction structure is prepared on the substrate, the ferromagnetic / non-magnetic heterojunction structure comprises a ferromagnetic layer structure and a non-ferromagnetic layer structure serving as a track source, the ferromagnetic layer structure is located on the face, away from the substrate, of the non-ferromagnetic layer structure, and the ferromagnetic layer structure has perpendicular magnetic anisotropy; wherein the non-ferromagnetic layer structure is made of a 3d-5d metal material and a two-dimensional TMD material, and the ferromagnetic layer structure is an artificially synthesized antiferromagnetic layer or an artificially synthesized ferromagnetic layer. According to the orbital electronics device and the magnetic storage device which are formed on the basis of an artificially synthesized antiferromagnetic layer or an artificially synthesized ferromagnetic layer as a ferromagnetic layer, the orbital torque efficiency can be enhanced, the critical overturning current density is reduced, and the overturning speed is increased.

The invention belongs to the technical field of online detection of oil and gas pipelines, and particularly relates to a real-time detection device for compound damage of an oil and gas pipeline under double magnetic fields. In order to realize dual early warning on stress concentration degree and defect profile of composite pipeline damage, a PC (Personal Computer), a control system and other main control equipment are utilized to intelligently control an excitation system and a plurality of groups of magnetic sensors densely distributed on a detection pipe section; and generation and digital acquisition of pipeline composite damage magnetic detection signals under strong and weak double magnetic fields are carried out. And based on magnetic flux leakage detection and magnetic memory detection principles, a digital calculation and analysis program of the system is written so as to design the real-time detection device for the composite damage of the oil and gas pipeline under the double magnetic fields.

One or more systems, methods and / or machine-readable mediums are described herein for adaptively quantizing the parameters that are aimed to be deployed on in-memory computing systems based on magnetic memory devices. The method includes quantizing parameters based on a conductance shift sensing process, a sensed conductance shift value, a conductance shift lookup table, and a parameter to be quantized. The parameter can be quantized by using a value recorded in the lookup table, such as rounding to the nearest value. The lookup table can be generated by the conductance shift sensing process which can enabling recording of a sensed conductance of a magnetic memory device and an associated device state. The conductance shift sensing process can set the magnetic memory device (MMD) to different states and can measure the conductance shift of the MMD, caused by the state setting, using suitable equipment.

The invention belongs to the technical field of coiled tubing life prediction, and particularly discloses a coiled tubing fatigue damage degree prediction method and a coiled tubing remaining life prediction method. The fatigue damage degree prediction method comprises the following steps: carrying out a bending fatigue test on a coiled tubing sample, and collecting a series of magnetic memory signals; preprocessing the series of magnetic memory signals and extracting a plurality of magnetic memory signal characteristic values from the magnetic memory signals; sequentially arranging the plurality of magnetic memory signal characteristic values according to the acquisition time to serve as an original data column, and establishing a grey prediction model; based on the grey prediction model and in combination with the Miner fatigue linear accumulation theory, a coiled tubing fatigue damage degree prediction model representing the relation between the magnetic memory signal characteristic value and the coiled tubing fatigue damage degree is established; and based on the established model, predicting the fatigue damage degree of the oil pipe to be detected according to the detected characteristic value of the magnetic memory signal. The fatigue damage degree prediction method can conveniently and efficiently predict the fatigue damage degree of the oil pipe to be detected.

The invention provides a magnetic memory and a preparation method thereof. The magnetic memory comprises a plurality of memory units, at least part of the memory units are arranged along a first direction, and each memory unit comprises a magnetic tunnel junction; at least part of the magnetic shielding structure is located between the adjacent storage units in the first direction, and the magnetic shielding structure and the adjacent storage units are arranged at intervals; wherein the magnetic shielding structures and the adjacent storage units are arranged at intervals. Due to the fact that the magnetic shielding structure is arranged between every two adjacent storage units, the storage area can be saved through the design, meanwhile, the magnetic shielding structures can prevent the storage units from making contact with the magnetic shielding structures to cause short circuit, and the storage units have the anti-magnetic characteristic of an opposite internal magnetic field. Therefore, the magnetic memory has the diamagnetic properties of a vertical magnetic field and an in-plane magnetic field, the diamagnetic capability of the magnetic memory is improved, and the reliability of the magnetic memory in a magnetic field environment is further improved.

A magnetic memory device includes a reference magnetic pattern and a free magnetic pattern stacked on a substrate, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a first non-magnetic pattern on the free magnetic pattern, the free magnetic pattern being between the tunnel barrier pattern and the first non-magnetic pattern, a second non-magnetic pattern on the first non-magnetic pattern, the first non-magnetic pattern being between the free magnetic pattern and the second non-magnetic pattern, a metal pattern between the first non-magnetic pattern and the second non-magnetic pattern, and a conductive layer on a side surface of the first non-magnetic pattern.

This disclosure presents a 3D magnetic memory device comprising a stack with alternatingly arranged dielectric and silicon-based layers, and a magnetic material channel formed through the stack. The channel has a first diameter where it extends through a silicon-based layer, and a second diameter where it extends through a dielectric layer. Pinning sites defined by the layers are formed in the channel, each pinning site being configured to store one magnetic bit. A first metallic layer is arranged on a first end of the channel and the stack. A magnetic tunnel junction (MTJ) and a first electrode are arranged on the first metallic layer in a distance to another. Either the first metallic layer is configured as a spin-orbit-torque (SOT) track, or a second metallic layer is configured as a SOT track, wherein a second end of the channel and the stack are arranged on the second metallic layer.

The invention provides a physical unclonable function magnetic device and an application method thereof, the magnetic device comprises a plurality of magnetic storage units arranged in an array and a control circuit, and each magnetic storage unit comprises a spin orbit moment layer and at least one magnetic tunnel junction arranged on the spin orbit moment layer; and the control circuit is used for applying a composite reconstruction signal with oscillation change to the magnetic memory units, and forming a superposed physical field with oscillation change at the magnetic memory units so as to enable the resistance state of the magnetic tunnel junction to generate oscillation change to realize PUF reconstruction of the plurality of magnetic memory units arranged in an array. In order to solve the problems of limited CRP generated by the PUF circuit and low resource utilization rate, the physical field with oscillation change is formed through the composite reconstruction signal, so that the PUF of the magnetic tunnel junction of the SOT-MRAM generates random oscillation change, the PUF of the magnetic device can be reconstructed, the reconstructed magnetic device can generate new CRP, and the resource utilization rate is improved.

The invention provides a magnetic memory and an array thereof, relates to the technical field of semiconductors, and is used for improving a writing mode of the magnetic memory and realizing a high-density magnetic memory array. According to the magnetic memory structure provided by the invention, the bias region is arranged, and the interior of the bias region is at least filled with the ferromagnetic layer, the antiferromagnetic layer and the seed layer, so that the stability of the magnetic memory can be effectively improved; the stray field generated by the ferromagnetic layer can assist the magnetic direction of the free layer in flipping, so that field-free flipping is realized, the polarity of the ferromagnetic layer can still be stable after the magnetic memory is miniaturized due to the exchange bias effect generated between the ferromagnetic layer and the anti-ferromagnetic layer, the device stability after the size of the magnetic memory is miniaturized is further improved, and the reliability of the magnetic memory is improved. And realization of a high-density magnetic memory array is facilitated.

The invention provides a magnetic memory, a magnetic memory unit and a magnetic memory system. The magnetic memory at least comprises a first antiferromagnetic layer, a free layer, a barrier layer, a reference layer and a second antiferromagnetic layer which are sequentially stacked from bottom to top, wherein the magnetic moment direction of the reference layer is a first direction, the magnetic moment direction of the free layer is a second direction, and the first direction is perpendicular to the second direction; when the magnetic memory is in a first mode, applying a current parallel to a second direction to the first antiferromagnetic layer, so that the magnetic moment direction of the free layer is changed from the second direction to a direction parallel to the first direction, and the magnetic memory is switched from the first mode to the second mode; the first mode is used for detecting a magnetic field around the magnetic memory; the second mode is used for data storage. Therefore, the magnetic memory can be switched from the sensing mode to the storage mode, and the occupied space and cost can be saved at the same time.

A magnetic memory device includes first to third conductors and a 3-terminal type memory cell coupled to the first to third conductors. The memory cell includes: a fourth conductor and a magnetoresistance effect element provided between the fourth and third conductors. The magnetoresistance effect element includes: a first ferromagnet in contact with the fourth conductor; a second ferromagnet provided in an opposite side of the fourth conductor with respect to the first ferromagnet; a dielectric between the first and second ferromagnets; a third ferromagnet provided in an opposite side of the first ferromagnet with respect to the second ferromagnet; and a nonmagnet provided between the second and third ferromagnets. A concentration of a noble metal contained in the first ferromagnet is higher than a concentration of the noble metal contained in the second ferromagnet.

A magnetic memory device includes a spin-orbit interaction active core having a number of layers stacked along a longitudinal axis and a magnetic junction extending around the longitudinal axis and substantially surrounding at least a portion of the spin-orbit interaction active core. The magnetic junction includes a free layer, a reference layer, and a tunnel barrier layer between the free layer and the reference layer.

A magnetic memory device may include a pinned magnetic pattern and a free magnetic pattern which are stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a capping pattern on the free magnetic pattern, and a non-magnetic pattern between the free magnetic pattern and the capping pattern. The free magnetic pattern may be between the tunnel barrier pattern and the capping pattern. The non-magnetic pattern may include a first non-magnetic metal and boron, and the capping pattern includes a second non-magnetic metal. A boride formation energy of the second non-magnetic metal may be higher than a boride formation energy of the first non-magnetic metal.

The invention discloses a steel box girder hidden damage identification method based on a magnetic memory effect, and relates to the technical field of bridge structure health monitoring, and the method comprises the steps: employing a magnetic memory detector, arranging a probe to detect the normal component of a leakage magnetic field on the surface of a steel box girder, carrying out the normalization processing of an original signal in order to eliminate the influence of an initial residual magnetic field, calculating to obtain a benchmark magnetic signal variable quantity; detecting lines are arranged on the upper flange, the lower flange and the web of the steel box girder at the interval of 5mm, and detecting points are arranged on the detecting lines at the interval of 1mm; carrying out graded loading on the steel box girder, synchronously acquiring strain data and magnetic memory signal data, and constructing a structured data set; a magnetic signal variation distribution curve is drawn according to the data set, the curve form is analyzed to recognize a local extreme point, and the position of the extreme point is a local buckling damage area; and verifying the consistency of the position of the extreme point and the actual buckling damage area by comparing the final damage form of the test piece, so as to realize high-precision positioning of the hidden damage.

A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

The invention relates to a perpendicular anisotropic magnetic memory based on rare earth doped antiferromagnetic, which comprises a thin film structure, and the thin film structure sequentially comprises a buffer layer, a heavy metal layer, a perpendicular magnetic anisotropic layer, a rare earth doped antiferromagnetic layer and a protective layer from bottom to top, according to the invention, the magnetic texture is changed by doping rare earth elements into the collinear antiferromagnetic to break the symmetry of the system, and the spin-orbit torque is utilized to drive the magnetic state of the memory device with perpendicular magnetic anisotropy to overturn only by means of current under the condition of no external field assistance. The method provides a new implementation path for a low-power-consumption and high-density spin storage technology, has a good application prospect, and is expected to promote actual development and application of novel magnetic storage devices in the future.

A magnetic memory device including a tunneling magnetoresistance layer and a memory device including the magnetic memory device are provided. The magnetic memory device includes the tunneling magnetoresistance layer, including a free layer, a tunneling barrier layer, and a pinned layer, and a spin orbit torque (SOT) layer configured to provide a spin current to change a magnetization direction of the free layer of the tunneling magnetoresistance layer, wherein the SOT layer includes an orbital Hall conductance (OHC) material layer configured to provide an orbital Hall current and a conversion layer configured to convert the orbital Hall current of the OHC material layer into the spin current, and the OHC material layer includes at least one material of iridium (Ir), manganese (Mn), vanadium (V), chromium (Cr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), tantalum (Ta), tungsten (W), and rhenium (Re), or an alloy thereof.

The invention discloses a magnetic memory unit and an SOT-MRAM memory, which are applied to the technical field of MRAM memories, and comprise at least one group of differential bits and an auxiliary magnetic structure, the differential bit includes: a spin orbit moment provision line; the two magnetic tunnel junctions are positioned on one side of the spin orbit moment providing line; the differential bit has a first direction parallel to the axis of the spin orbit moment providing line and an initial magnetization direction perpendicular to the first direction; the auxiliary magnetic structure provides a bias magnetic field for the two magnetic tunnel junctions in the same differential bit, and the bias magnetic field has a component in the first direction and a component in the initial magnetization direction; the component directions of the two bias magnetic fields along the initial magnetization direction are the same, and the component directions of the two bias magnetic fields along the first direction are opposite. Initialization can be completed only through one-time initial magnetization in the initial magnetization direction, and meanwhile the reliable writing-in problem and the high-speed reading problem of the perpendicularly magnetized MTJ zero magnetic field are solved.

The invention discloses an instruction-driven coprocessor architecture design method for an in-memory computing platform of a high-performance magnetic memory. The instruction-driven coprocessor architecture design method comprises the following steps of: switching a magnetic memory into a normal mode or an in-memory computing mode by writing a corresponding operation code into a state register OP; the normal mode is used for the read-write function of a normal memory, and the in-memory calculation mode provides the function that the magnetic memory serves as a calculation unit; when the magnetic memory is used as a computing unit, the operation of in-memory computing consists of two memory access instructions, namely, an in-memory computing activation instruction and an in-memory computing address transmission instruction; the in-memory calculation activation instruction is used for activating an in-memory mode of the memory, and the in-memory calculation address transmission instruction is used for providing necessary control signals for in-memory calculation. On the premise that a memory protocol and an instruction set architecture are not changed, memory access and calculation instructions can be distinguished through the memory circuit with the changeable state, and the high-reliability, low-power-consumption and high-parallelism in-memory calculation architecture based on the magnetic memory is achieved.

The invention relates to the technical field of pipeline detection, in particular to an intelligent non-contact pipeline detection system based on a metal magnetic memory effect, and provides the following scheme: dividing a to-be-detected pipeline into a plurality of grid units, obtaining self-leakage magnetic field data of each grid, constructing a magnetic moment matrix, and forming a magnetic field matrix; according to the method, abnormal grids are positioned based on a magnetic field matrix, a grid with the highest abnormal score is selected from a spatially continuous abnormal set through screening logic to serve as a seed grid, authenticity of adjacent abnormal grids is verified step by step in combination with a local inversion window and magnetic flux continuity constraint, false anomalies caused by magnetic flux diffusion or noise are eliminated, and the accuracy of the abnormal grids is improved. Performing magnetic moment matrix updating on the confirmed real defect grid; and finally, calculating a magnetic gradient modulus by utilizing the updated magnetic moment matrix and determining a damage grade. Adjacent lattice infection can be effectively inhibited, the defect positioning precision and the damage evaluation reliability are improved, and the method is suitable for a non-contact inspection scene of an in-service pipeline.

A bilayer film of a magnetic body and an insulator has an antiferromagnetic layer having a hexagonal crystal structure and at least one surface of which is the (10-10) surface of an antiferromagnetic body, and an insulator layer containing two or three or four atoms laminated on the (10-10) surface of the antiferromagnetic layer. A bilayer film of a magnetic body and an insulator has an antiferromagnetic layer having a hexagonal crystal structure and at least one surface of which is the (0001) surface of an antiferromagnetic body, and an insulator layer containing two or three or four atoms laminated on the (0001) surface of the antiferromagnetic layer. The tunneling magnetoresistive element has a second antiferromagnetic film layer laminated on the insulator of the bilayer film. The magnetic memory includes a plurality of the tunneling magnetoresistive elements.

According to an embodiment of the inventive concept, a magnetic memory device includes a substrate on which a transistor controlled by a word line is disposed, a spin detection layer disposed on the substrate, and a magnon spin valve disposed on the spin detection layer. Here, the magnon spin valve includes a free layer disposed on the spin detection layer, a reference layer disposed on the free layer, and a spacer disposed between the free layer and the reference layer. Also, one edge of the spin detection layer is connected to a source / drain region of the transistor, the other edge of the spin detection layer is connected to a source line, and the magnon spin valve is disposed on a portion between the one edge and the other edge of the spin detection layer. The spin detection layer includes a topological material or a weyl semimetal. Each of the reference layer and the free layer includes a ferromagnetic insulator.

The invention relates to the technical field of steel structure quality detection equipment, in particular to a metal magnetic memory detection device for detecting a steel structure beam-column joint welding seam, and aims to solve the problem that an existing magnetic memory detection device for a steel structure welding seam is low in universality and flexibility. The metal magnetic memory detection device for detecting the steel structure beam-column joint welding seam comprises a magnetic memory probe, the device further comprises a holding tool mechanism, an adjusting mechanism and a detection mechanism. The holding tool mechanism is detachably connected with the I-shaped steel; the adjusting mechanism is detachably connected with the holding tool mechanism. The holding tool mechanism comprises two moving assemblies, a plurality of mounting rods and two stabilizing assemblies. The displacement assembly comprises a plurality of connecting rods, a driving assembly and a plurality of buffering pieces. According to the metal magnetic memory detection device for detecting the steel structure beam-column joint welding seam, the magnetic memory probe can be accurately moved to any position of the welding seam, and the metal magnetic memory detection device can be flexibly used according to different working conditions.

A two-layer film of a magnetic body and an insulator according to the present invention comprises an antiferromagnetic layer that has a hexagonal crystal structure, with at least one surface thereof being the (10-10) plane of the antiferromagnetic body, and an insulator layer that is composed of two, three, or four kinds of atoms layered on the (10-10) plane. A two-layer film of a magnetic body and an insulator according to the present invention comprises an antiferromagnetic layer that has a hexagonal crystal structure, with at least one surface thereof being the (0001) plane of the antiferromagnetic body, and an insulator layer that is composed of two, three, or four kinds of atoms layered on the (0001) plane. A tunnel magnetoresistive element according to the present invention comprises a second antiferromagnetic film layer that is layered on the insulator of the two-layer film. A magnetic memory according to the present invention comprises a plurality of the tunnel magnetoresistive elements.

The invention provides a magnetic storage unit and device based on signal time delay. The unit comprises a first spin orbit moment layer and a first magnetic tunnel junction arranged on the first spin orbit moment layer. The distances between the first magnetic tunnel junction and the two ends of the first spin orbit moment layer are respectively a first distance and a second distance, and the first distance and the second distance are not equal; respectively inputting a first pulse signal and a second pulse signal from two ends of the first spin orbit moment layer along the first distance and the second distance; and the first pulse signal and the second pulse signal form a first write-in spin transfer torque current at the first magnetic tunnel junction due to signal time delay, so that the magnetic moment of a free layer of the first magnetic tunnel junction is subjected to deterministic overturning under the action of the first write-in spin transfer torque current. Deterministic writing of the magnetic tunnel junction can be realized without an additional auxiliary magnetic field, the device structure is simplified, and the area and power consumption overhead are reduced.

A magnetic memory device includes a substrate that includes a cell region and a boundary region adjacent to the cell region, a data storage structure that includes a magnetic tunnel junction pattern and is on the cell region, and a dummy pattern structure on the boundary region. The dummy pattern structure is spaced apart from the data storage structure in a first direction that is parallel to an upper surface of the substrate. The dummy pattern structure is parallel to the upper surface of the substrate and extends linearly in a second direction that intersects the first direction.

The present invention relates to the field of pipeline detection technology, and specifically to a buried pipeline detection method based on three-component magnetic field curve image recognition. It includes: S1: acquiring detection data of buried pipelines based on non-contact metal magnetic memory detection; S2: converting the measured data into three-component magnetic field curve images, dividing them into defects, stress concentration areas, and normal, establishing database 1, and using convolutional neural network to train and generate classifier 1; S3: dividing the stress concentration area images in database 1 into the stress danger degree of the pipe section according to the intensity of the curve change, establishing database 2, and using convolutional neural network to train and generate classifier 2; S4: in actual detection, sending the newly detected three-component magnetic field curve image into classifier 1 for classification, sending the identified stress concentration area curve image into classifier 2, and judging its pipe section stress danger degree. The present invention can effectively detect defects or cracks in buried pipelines, and realize early diagnosis of defects to prevent them before they occur.

The switch device comprises a lower electrode, an upper electrode, and a switch material layer disposed between the lower electrode and the upper electrode. When the switch device is in an on state, the switch material layer is in a liquid state and has a bandgap of 0; when the switch device is in an off state, the switch material layer is in a crystalline state, and a Schottky barrier is formed between the switch material layer and the upper electrode, as well as between the switch material layer and the lower electrode. The switch device employs the crystalline-liquid-crystalline phase change mechanism of the switch material, and can drive memory units, such as phase change memory units, resistive memory units, ferroelectric memory units, magnetic memory units, and the like, thereby enabling high-density three-dimensional information storage.