49 results about "Perpendicular magnetization" patented technology

A magnetoresistive random-access memory cell includes a substrate; a sub-monolayer nitride layer, outward of the substrate, having a sub-monolayer nitride layer thickness less than 10 Angstroms; and a templating layer, outward of the sub-monolayer nitride layer, and including a binary alloy having an alternating layer lattice structure. A Heusler layer is located outward of the templating layer. The Heusler layer includes a Heusler compound and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the Heusler layer, and a magnetic layer is outward of the tunnel barrier. In an alternative aspect, instead of the sub-monolayer nitride layer, a tantalum nitride layer with a thickness of ≤10 Angstroms+10% is employed.

The invention discloses a spin orbit moment magnetic tunnel junction, a majority gate spin logic device and cascade of the majority gate spin logic device, and the magnetic tunnel junction comprises an electrode layer, an artificial antiferromagnetic reference layer, an insulating tunneling layer, a magnetization free layer and an abnormal spin orbit moment layer which are sequentially stacked from top to bottom, the artificial antiferromagnetic reference layer comprises a first ferromagnetic layer, a non-magnetic spacer layer and a second ferromagnetic layer which are sequentially stacked from top to bottom, and the first ferromagnetic layer has vertical magnetization with a fixed direction; the electrode layer in contact with the first ferromagnetic layer has in-plane polarization to adjust the magnetization direction of the second ferromagnetic layer, and the magnetic free layer has vertical magnetization with variable direction; and the abnormal spin-orbit moment layer in contact with the magnetic free layer has an in-plane magnetization direction to generate an abnormal spin Hall effect, so that the magnetization of the magnetic free layer is overturned, the resistance state of the spin-orbit moment magnetic tunnel junction is changed, and a logic function is realized.

The invention belongs to the technical field of spintronics devices, and particularly relates to a vertical magnetization ferromagnetic layer field-free flipping method in an orbital electronics device. In the prior art, an orbital electronic device has the problem that a current-induced vertical magnetization ferromagnetic layer needs an external magnetic field to assist in overturning, which greatly limits the actual application of the orbital electronic device. In order to solve the problem, two technical schemes are provided, one scheme is that a wedge-shaped substrate is coated with a film, and the other scheme is that an antiferromagnetic layer is inserted between a track source layer and the substrate. According to the two technical schemes, the symmetry of the system can be broken through, and field-free overturning of the perpendicular magnetization ferromagnetic layer in the track electronics device is finally achieved.

A magnetoresistive random-access memory cell includes a first magnetic layer having a first lattice constant; a second magnetic layer having a second lattice constant; and a tunnel barrier between the first and second magnetic layers. The tunnel barrier includes at least one oxide layer with an oxide layer lattice constant. The oxide layer lattice constant has a mismatch smaller than six percent with at least one of the first and second lattice constants.

A second magnetic layer (13) of a magnetoresistive element (100) is a perpendicular magnetization layer when no voltage (V) is applied to the magnetoresistive element (100), changes from the perpendicular magnetization layer to an in-plane magnetization layer when a first voltage (V1) is applied to the magnetoresistive element (100), and changes from the perpendicular magnetization layer to the in-plane magnetization layer when a second voltage (V2) is applied to the magnetoresistive element (100). Magnetization of the second magnetic layer (13) changes to a first direction of a direction perpendicular to a plane of the layer after a third voltage (V3) is applied to the magnetoresistive element (100) for a first period of time and changes to a second direction of the direction perpendicular to the plane of the layer after a fourth voltage (V4) is applied to the magnetoresistive element (100) for a second period of time. The first voltage (V1) and the second voltage (V2) are in opposite directions to each other, and the third voltage (V3) and the fourth voltage (V4) are in opposite directions to each other.

The three-degree-of-freedom micro-vibration isolator with stiffness and damping adaptive cooperative regulation belongs to the technical field of precision vibration isolation, and can realize three-degree-of-freedom near full-band vibration isolation performance under variable load. It comprises an upper plate, a base plate and three sets of low-frequency vibration isolation dampers connected between the upper plate and the base plate; the negative stiffness damping regulator in the low-frequency vibration isolation damper utilizes a multi-layer axial array of equal-section magnetic ring arrays with vertical magnetization between adjacent layers to construct a single-side high magnetic density excitation magnetic field, and coaxially nests the vertical magnetization permanent magnet ring array and the moving magnet ring array to generate high negative stiffness characteristics, and coaxially nests the coil to generate high damping characteristics; by real-time sensing the changes of the vibration isolation load mass or the excitation frequency, the size of the current in the energized coil is adjusted to generate a precisely controllable excitation magnetic flux, match the negative stiffness and damping requirements of near full-band vibration isolation, and achieve multi-directional, near full-band and high-performance vibration isolation effect.

Disclosed are a spin-orbit torque magnetic tunnel junction and a majority gate spin logic device and a cascade thereof, in the magnetic tunnel junction, comprising, from top to bottom, an electrode layer, an artificial antiferromagnetic reference layer, an insulating tunneling layer, a magnetized free layer, and an abnormal spin-orbit torque layer, wherein the artificial antiferromagnetic reference layer comprises, from top to bottom, a first ferromagnetic layer, a non-magnetic spacer layer, and a second ferromagnetic layer, the first ferromagnetic layer has a fixed direction of perpendicular magnetization; the electrode layer in contact with the first ferromagnetic layer has an in-plane polarization to adjust the magnetization direction of the second ferromagnetic layer, the magnetic free layer has a variable direction of perpendicular magnetization; the abnormal spin-orbit torque layer in contact with the magnetic free layer has an in-plane magnetization direction to generate an abnormal spin Hall effect to make the magnetic free layer magnetization flip, thereby changing the spin-orbit torque magnetic tunnel junction resistance state and realizing a logic function.

To improve the performance of an axial gap motor.SOLUTION: A rotor for an axial gap motor includes a rotor core, magnets arranged in a Halbach array on the rotor core, and an insert member of magnetic material inserted between the rotor core and the magnets, the magnets include a first magnet magnetized vertically and a second magnet magnetized horizontally, and the insert member is positioned so as to form a magnetic path at least between the first magnet and the second magnet.SELECTED DRAWING: Figure 1

The invention provides a tunnel magnetoresistive element, a magnetic sensor module and a current sensor. The tunnel magnetoresistive element has high sensitivity in a wide magnetic field range. The TMR element (51) is provided with a fixed layer (51o), an insulating layer (51p), and a free layer (51q) which are laminated in this order in the z-axis direction, the free layer has a columnar shape extending in the z-axis direction and expanding in the horizontal direction, and the aspect ratio (t / d) obtained using the height (film thickness) t and the effective size d as the height t of the free layer in the z-axis direction and the effective size d of the free layer in the horizontal direction is 1 or more. The height t is 20 nm or more, and the effective size d is 2.57 * 10-2 [A] / Ms or less when the saturation magnetization Ms [A / nm] of the free layer is used. As a result, it is possible to form a free layer having a perpendicular magnetization structure in which the magnetic moment is uniform or substantially uniform in the z-axis direction, and it is possible to obtain a TMR element having high sensitivity over a wide magnetic field range.

The six-degree-of-freedom low-frequency vibration isolator based on vertical magnetization spatial electromagnetic array belongs to the technical field of precision vibration isolation, comprising a top plate, a base plate and six sets of low-frequency electromagnetic vibration isolators arranged in a Stewart manner. The vibration isolator can realize low-frequency, ultra-low-frequency and even near-zero-frequency vibration isolation in six degrees of freedom in space, and has high stability and strong adaptability. The vertical magnetization spatial electromagnetic array negative stiffness structure in the low-frequency electromagnetic vibration isolator utilizes coaxially nested double magnetic ring arrays to achieve passive high negative stiffness characteristics, and utilizes the energized coil coaxially nested with the double magnetic ring array to generate a precisely controllable excitation magnetic flux, dynamically adjusting the bias magnetic field and the negative stiffness value, perfectly adapting to the changing needs of different vibration isolation load masses and excitation frequencies, and ensuring stable vibration isolation performance under various working conditions. The coaxially nested vertical magnetization double magnetic ring array enhances the excitation magnetic field on the working side, reduces the magnetic leakage of the low-frequency electromagnetic vibration isolator, and improves the magnetic field utilization rate.

The application relates to a vertical magnetization anti-ferromagnetic magnetic memory without external field assistance and a storage method thereof, which comprises an anti-ferromagnetic layer, an insulating layer and a heavy metal layer from top to bottom, two groups of write currents of the anti-ferromagnetic layer and the heavy metal layer are perpendicular to each other in space, the size and direction of the two groups of write currents of the anti-ferromagnetic layer and the heavy metal layer are controlled, the upward or downward state of a Neel vector in the anti-ferromagnetic layer is controlled, and the Neel vector state represents different information of storage. The Neel vector of an anti-ferromagnetic device is regulated by using direct current to realize data writing, improve the arrangement density of a storage unit array, and save energy consumption. The vertical magnetization anti-ferromagnetic magnetic random storage unit has higher magnetic moment flip speed, better storage stability, simple structure, high speed, anti-stray field disturbance and non-volatility, and the storage unit is especially faster in reading and writing speed.

A magnetoresistive random-access memory cell includes a substrate; a seed layer outward of the substrate; a resistive layer outward of the seed layer; and an ultra-thin templating layer. The ultra-thin templating layer is outward of the resistive layer, and includes a binary alloy having an alternating layer lattice structure. The ultra-thin templating layer has a thickness of 7-30 Angstroms. A Heusler layer is located outward of the ultra-thin templating layer, includes a Heusler compound, and exhibits perpendicular magnetic anisotropy (PMA).

The present invention discloses a magnetic anomaly pole-localization method based on equivalent source inversion, comprising: uniformly gridding the underground space according to observation data, and constructing an equivalent source space by setting an inversion depth; obtaining a sensitivity matrix for forward and inverse calculations of magnetic survey data according to the observation data and parameters of the equivalent source space; calculating physical parameters of the equivalent source space using a generalized minimum residual method according to the sensitivity matrix and magnetic anomaly data, and constructing an equivalent source model; forward modeling the vertically magnetized geomagnetic field according to the sensitivity matrix and the equivalent source model to obtain a magnetic anomaly pole-localization result. The method reconstructs an inversion calculation framework of the equivalent source model based on the generalized minimum residual method, solves problems such as the difficulty in solving large-scale equation groups in similar inversions, improves the efficiency and accuracy of equivalent field source inversion imaging, can well achieve stable pole-localization under arbitrary geomagnetic inclination conditions, and is suitable for pole-localization processing of magnetic anomalies in regions with low geomagnetic latitudes, especially in the magnetic equatorial region.

Magnetic device comprising: (a) several vertically magnetized MTJs (11a, 11b), each of which has a side wall extending from an upper surface to a lower surface, the lower surface contacting a lower electrode (10a) and the upper surface contacting an upper electrode (14a, 14b) on a first plane parallel to the lower surface; (b) an encapsulation layer (12, 13) which adjoins the side wall from the upper surface to the lower surface of each perpendicularly magnetized MTJ and has an upper surface on the first plane, wherein the encapsulation layer has: (1) a first dielectric layer (12) comprising a lower layer (12-1) containing B or Ge, which contacts the perpendicularly magnetized MTJ side wall, and an upper layer (12-3) comprising one or more SiO Y N Z , AIO Y N z TiO Y N z , SiC y Nz or MgO, where y + z > 0; and (2) a second dielectric layer (13) formed on an upper surface of the first dielectric layer and having a composition comprising one of metal oxide, metal nitride, metal carbide, metal oxynitride or metal cyanide nitrogen or combinations thereof.

The present application relates to the vertical magnetization-based isotropic X-space magnetic particle imaging device and method, the imaging device includes scanning coil, excitation coil and vertical receiving coil, the magnetic particle in the magnetic field-free region generates the magnetic particle signal under the excitation of excitation coil magnetic field, and the vertical receiving coil receives the vertical magnetization response signal;Scanning coil drives the magnetic field-free region to traverse the imaging plane region where the object to be imaged is located, then determines the scanning track grid according to the scanning coil current, compensates according to the excitation coil current, obtains the initial image containing the corresponding relationship between the instantaneous signal and the track grid position, and reconstructs the initial image to obtain the isotropic concentration distribution image of the object to be imaged.The present application only uses a pair of mutually perpendicular excitation-receiving coils, solves the direct coupling problem of the MPI device, simultaneously utilizes the vertical magnetization signal combined with the improved X-space reconstruction method, realizes the isotropic reconstruction and real-time reconstruction.

The present invention provides a rapid single harmonic magnetic particle imaging device and method based on perpendicular magnetization. This device uses orthogonal sensing coils instead of single receiving coils to acquire multidimensional single harmonic magnetic particle signals for joint reconstruction, achieving full electromagnetic scanning. Therefore, while improving the quality of single harmonic magnetic particle images, the present invention facilitates rapid imaging of single harmonic MPI, alleviates the problem of inaccurate reconstructed images caused by the mutual cancellation of certain harmonic signals, and can improve image reconstruction quality under single harmonic reconstruction. Compared with traditional single harmonic magnetic particle imaging methods, the present invention achieves full electromagnetic scanning, which facilitates rapid single harmonic magnetic particle imaging; and effectively utilizes perpendicular magnetization signals to achieve accurate imaging.

The invention belongs to the field of spintronics, and discloses a method for remarkably regulating and controlling spin orbit torque based on a magnetic phase change material iron-rhodium alloy, the method is a heterojunction constructed based on the magnetic phase change material iron-rhodium alloy, and the heterojunction has a Hall target structure. Comprising a magnetic phase change material iron-rhodium alloy layer, and a non-magnetic light metal layer, a ferromagnetic layer and a covering layer which are positioned on the iron-rhodium alloy layer and are sequentially stacked from bottom to top, the ferromagnetic layer has the characteristic of perpendicular magnetic anisotropy; the iron-rhodium alloy layer serves as a spin source layer, and the magnetic phase change material iron-rhodium alloy can be subjected to antiferromagnetic-ferromagnetic first-order phase transformation along with temperature change. According to the invention, the iron-rhodium alloy is used as the spin source layer, a vertical magnetization heterojunction of the iron-rhodium alloy layer / the non-magnetic light metal layer / the ferromagnetic layer / the covering layer is formed, and efficient regulation and control of the spin orbit torque can be realized (especially remarkable regulation and control of 450% of the spin orbit torque can be realized).

The present invention discloses a true random number generator comprising a multilayer film structure, comprising: a conductive layer configured to pass a first current; a first magnetic layer located above the conductive layer, having an easy magnetization direction perpendicular to the interface between the conductive layer and the first magnetic layer, and configured such that, under the Joule heating effect of the first current, the magnetic moment of the first magnetic layer overcomes a reversal energy barrier and randomly flips in an upward or downward direction perpendicular to the interface; and a spin current cancellation layer located above the first magnetic layer, configured to cancel the spin-orbit moment generated by the spin current generated at the interface between the conductive layer and the first magnetic layer on the magnetic moment of the first magnetic layer. The true random number generator provided by the present invention, by adding the spin current cancellation layer to cancel the spin-orbit moment from the conductive layer, overcomes the problem that the magnetic moment of a perpendicular magnetization heterojunction device, under the spin-orbit coupling effect, has difficulty in flipping upward and downward with equal probability.

The invention relates to the technical field of voice coil motors, in particular to a lightweight short-stroke high-thrust-density rectangular voice coil motor, which comprises a motor shell, a first magnetic group, a second magnetic group, a third magnetic group and a coil, and is characterized in that the first magnetic group, the second magnetic group and the third magnetic group are fixed in the motor shell side by side at intervals; the parallel magnetized permanent magnet is used as a main source of magnetomotive force in a magnetic circuit, and the inner shell and the vertical magnetized permanent magnet are used as assistants, so that the magnetic flux density of a gas-gap magnetic field can be greatly increased, the thrust constant and the thrust density of the motor are improved, and the thrust constant and the thrust density of the motor are improved. The non-magnetic first outer shell is adopted to ensure that most magnetic flux passes through the air gap, and the magnetic second outer shell and the magnetic inner shell are adopted to reduce the magnetic leakage of the parallel magnetized permanent magnets and enhance the air gap magnetic field.

The six-degree-of-freedom adaptive active-passive composite spatial electromagnetic array damper belongs to the technical field of precision vibration isolation, and utilizes six sets of electromagnetic vibration isolation dampers arranged in a Stewart manner between a connecting upper plate and a base plate to generate low-frequency high-damping and high-frequency low-damping characteristics in six degrees of freedom, thereby effectively and omnidirectionally isolating micro-vibration interference of different frequencies. Each set of electromagnetic vibration isolation damper is constructed by 4n (n≥1, n∈N + ) layers of equal-section magnetic rings arranged in an axial array and vertically magnetized between adjacent layers to construct a high-damping excitation magnetic field, and in real time responds to changes in an external excitation frequency, precisely controls the size and direction of a coil current through a speed feedback control method, dynamically adjusts a damping force to adapt to different working conditions, and ensures optimal vibration isolation effect. The adaptability and stability of the adaptive active-passive composite spatial electromagnetic array damper enable it to still maintain high vibration isolation performance in a multi-degree-of-freedom and frequency diversified vibration environment, thereby providing protection for the stable operation of precision instruments and equipment.

The invention discloses a multiferroic memory internal logic device based on orbit transfer torque and an implementation method thereof. The vertical magnetization overturning direction of the free ferromagnetic layer is related to the direction of the orbital transfer torque applied by the two-dimensional Belry curvature ferroelectric layer, and the orbital magnetic moment polarization direction is closely related to the in-plane current direction and the Belry curvature dipole moment direction. Bottom gate voltage applied by a bottom gate and in-plane current applied by a source electrode and a drain electrode are respectively used as logic input, and a tunneling resistor is used as logic output, so that in-memory logic is realized; according to the invention, a track transfer torque direction generated by ferroelectric polarization and current control track magnetization is utilized, so that fully-electrically-controlled vertical magnetization overturning is realized, and a new generation of memory logic devices is realized; in-memory logic operation can be realized in the same MRAM unit, state control of the MRAM is more accurate, misjudgment is avoided, reliability and anti-interference performance of in-memory calculation are improved, and energy efficiency of a system is further improved. The method is expected to realize large-scale commercial application.

Large precision micro-vibration isolation adaptive active-passive composite space electromagnetic array damping control device belongs to the field of vibration isolation technology, adopting 4n (n≥1, n∈N + ) layers of equal-cross-section magnetic rings are arranged in an axial array and the adjacent layers are magnetized perpendicularly, forming coaxially nested inner and outer permanent magnet arrays, thereby constructing a high-magnetic-density excitation magnetic field around the conductor plate. The conductor plate produces a strong damping effect relative to the movement of the magnetic field. When the external excitation frequency changes, the current in the coaxially nested coils outside the conductor plate is precisely regulated by speed feedback, and the damping force is dynamically adjusted. In low-frequency micro-vibrations, it exhibits high damping characteristics, effectively reducing the vibration transmission rate; in high-frequency micro-vibrations, it exhibits low damping characteristics, achieving efficient attenuation of vibration interference. This active and passive composite damping control strategy enhances the adaptability and stability of large-scale precision micro-vibration isolation and its vibration isolation performance in complex vibration environments.

To provide a laminate structure of which a Gilbert attenuation α is small, and provide a spintronics device using them.SOLUTION: A laminate structure 1 includes: a support body layer 11; and a thin film formation part 12 formed onto one surface side of the support body layer 11. The thin film formation part 12 contains a construction that an in-surface magnetic film 121 of which a magnetization direction is an in-surface and a vertical magnetization film 122 of which the magnetization direction is vertical to the in-surface are arranged via a non-magnetic body 123. In the thin film formation part 12, it is preferably that the in-surface magnetic film 121 and the vertical magnetization film 122 are laminated via the non-magnetic body 123.SELECTED DRAWING: Figure 1

The present invention provides a method for prospecting a copper polymetallic ore target area based on aeromagnetic data, and relates to the technical field of mineral resource prospecting. The method performs variable-angle polarization on the acquired aeromagnetic data to obtain aeromagnetic ΔT anomalies under vertical magnetization; the aeromagnetic ΔT anomalies after polarization are extended upward to obtain regional anomalies and remove them, and obtain aeromagnetic local anomalies; the aeromagnetic data is subjected to depth-weighted three-dimensional magnetic susceptibility structure inversion, and the optimal solution of the objective function is solved to obtain the three-dimensional distribution structure of the crustal magnetic susceptibility; the aeromagnetic ΔT anomalies after polarization are subjected to depth inversion based on power spectrum analysis to obtain the Curie point depth of the study area; the three-dimensional fracture information of the three-dimensional magnetic susceptibility structure is extracted to obtain the three-dimensional fracture distribution in the crust; and the above information is comprehensively analyzed to establish the optimization principle of the favorable area of ​​copper polymetallic ore. The present invention provides support for the exploration and development of copper polymetallic ore based on high-precision aeromagnetic data and comprehensive multiple physical property parameters.

An example device includes a magnetic device, a first magnetic shielding, and a second magnetic shielding. The magnetic device is configured to determine a perpendicular magnetization that extends along a z-axis. The first magnetic shielding comprises a first magnetic material, the first magnetic shielding extending at least partially between a first surface of the magnetic device and a second surface of the magnetic device in the z-axis. The first surface is on an opposite side of the magnetic device from the second surface of the magnetic device. The second magnetic shielding comprises a second magnetic material, the second magnetic shielding extending at least partially between a third surface of the magnetic device and a fourth surface of the magnetic device in an x-axis. The fourth surface is on an opposite side of the magnetic device from the third surface of the magnetic device.

An improved magnetic tunnel junction with two oxide interfaces on each side of a ferromagnetic layer (FML) leads to higher PMA in the FML. The novel stack structure allows improved control during oxidation of the top oxide layer. This is achieved by the use of a FML with a multiplicity of ferromagnetic sub-layers deposited in alternating sequence with one or more non-magnetic layers. The use of non-magnetic layers each with a thickness of 0.5 to 10 Angstroms and with a high resputtering rate provides a smoother FML top surface, inhibits crystallization of the FML sub-layers, and reacts with oxygen to prevent detrimental oxidation of the adjoining ferromagnetic sub-layers. The FML can function as a free or reference layer in an MTJ. In an alternative embodiment, the non-magnetic material such as Mg, Al, Si, Ca, Sr, Ba, and B is embedded by co-deposition or doped in the FML layer.

The application discloses a method for reducing low-latitude magnetic anomaly, comprising the following steps: S1, constructing a model space of a sample data set, wherein the model space is composed of an underground half space and a plurality of cuboid units, and the plurality of cuboid units are arranged in a combined form in a non-edge area of the underground half space; S2, performing traversal sampling and data amplification to obtain a sample data equivalent magnetic anomaly body; S3, acquiring a stable initial model by using a frequency domain suppression method; S4, taking the stable initial model and a magnetic anomaly with an arbitrary magnetization direction as inputs of a FCN network structure, taking a magnetic anomaly perpendicular to the magnetization direction as a label, and training the FCN reduction network structure; and S5, taking measured data and the stable initial model as inputs of the trained FCN reduction network structure to obtain a reduction prediction result. The application can obtain more accurate reduction results and provide technical support for geological interpretation.

The application provides a voltage-regulated SOT-MRAM memory cell and SOT-MRAM memory, the SOT-MRAM memory cell comprising: a spin-orbit torque generation layer, a top electrode, and a magnetic tunnel junction between the spin-orbit torque generation layer and the top electrode, the magnetic tunnel junction comprising: a free layer on the spin-orbit torque generation layer, the free layer having a direction-variable perpendicular magnetization; a barrier layer on the free layer; a reference layer on the barrier layer, having a direction-fixed perpendicular magnetization; a spacer layer on the reference layer; a bias layer on the spacer layer, having a magnetization opposite to the magnetization direction of the reference layer, for generating a bias field to the free layer, wherein the saturation magnetization of the bias layer is higher than the saturation magnetization of the reference layer; and a regulation layer on the bias layer, for changing the magnetic anisotropy of the bias layer by using the VCMA effect when a voltage across the magnetic tunnel junction is applied between the top electrode and the spin-orbit torque generation layer.

The invention relates to a current-driven vertical magnetization heterojunction and a magnetic tunnel junction and a preparation method thereof. A vertically magnetized heterojunction structure may include: a spin Hall effect layer including a heavy metal material having a spin Hall effect; a ferromagnetic layer formed on the spin Hall effect layer, including an alloy of a ferromagnetic metal and a rare earth metal, where the spin Hall effect layer is configured to receive a flipping current in a first in-plane direction, the ferromagnetic layer having inclined magnetic anisotropy, the oblique magnetic anisotropy includes a perpendicular magnetic anisotropy component and an in-plane magnetic anisotropy component along a second in-plane direction, the second in-plane direction being perpendicular to the first in-plane direction.