14 results about "Perpendicular magnetization" patented technology

The invention belongs to the technical field of spintronics devices, and particularly relates to a vertical magnetization ferromagnetic layer field-free flipping method in an orbital electronics device. In the prior art, an orbital electronic device has the problem that a current-induced vertical magnetization ferromagnetic layer needs an external magnetic field to assist in overturning, which greatly limits the actual application of the orbital electronic device. In order to solve the problem, two technical schemes are provided, one scheme is that a wedge-shaped substrate is coated with a film, and the other scheme is that an antiferromagnetic layer is inserted between a track source layer and the substrate. According to the two technical schemes, the symmetry of the system can be broken through, and field-free overturning of the perpendicular magnetization ferromagnetic layer in the track electronics device is finally achieved.

Disclosed are a spin-orbit torque magnetic tunnel junction and a majority gate spin logic device and a cascade thereof, in the magnetic tunnel junction, comprising, from top to bottom, an electrode layer, an artificial antiferromagnetic reference layer, an insulating tunneling layer, a magnetized free layer, and an abnormal spin-orbit torque layer, wherein the artificial antiferromagnetic reference layer comprises, from top to bottom, a first ferromagnetic layer, a non-magnetic spacer layer, and a second ferromagnetic layer, the first ferromagnetic layer has a fixed direction of perpendicular magnetization; the electrode layer in contact with the first ferromagnetic layer has an in-plane polarization to adjust the magnetization direction of the second ferromagnetic layer, the magnetic free layer has a variable direction of perpendicular magnetization; the abnormal spin-orbit torque layer in contact with the magnetic free layer has an in-plane magnetization direction to generate an abnormal spin Hall effect to make the magnetic free layer magnetization flip, thereby changing the spin-orbit torque magnetic tunnel junction resistance state and realizing a logic function.

The application relates to a vertical magnetization anti-ferromagnetic magnetic memory without external field assistance and a storage method thereof, which comprises an anti-ferromagnetic layer, an insulating layer and a heavy metal layer from top to bottom, two groups of write currents of the anti-ferromagnetic layer and the heavy metal layer are perpendicular to each other in space, the size and direction of the two groups of write currents of the anti-ferromagnetic layer and the heavy metal layer are controlled, the upward or downward state of a Neel vector in the anti-ferromagnetic layer is controlled, and the Neel vector state represents different information of storage. The Neel vector of an anti-ferromagnetic device is regulated by using direct current to realize data writing, improve the arrangement density of a storage unit array, and save energy consumption. The vertical magnetization anti-ferromagnetic magnetic random storage unit has higher magnetic moment flip speed, better storage stability, simple structure, high speed, anti-stray field disturbance and non-volatility, and the storage unit is especially faster in reading and writing speed.

Magnetic device comprising: (a) several vertically magnetized MTJs (11a, 11b), each of which has a side wall extending from an upper surface to a lower surface, the lower surface contacting a lower electrode (10a) and the upper surface contacting an upper electrode (14a, 14b) on a first plane parallel to the lower surface; (b) an encapsulation layer (12, 13) which adjoins the side wall from the upper surface to the lower surface of each perpendicularly magnetized MTJ and has an upper surface on the first plane, wherein the encapsulation layer has: (1) a first dielectric layer (12) comprising a lower layer (12-1) containing B or Ge, which contacts the perpendicularly magnetized MTJ side wall, and an upper layer (12-3) comprising one or more SiO Y N Z , AIO Y N z TiO Y N z , SiC y Nz or MgO, where y + z > 0; and (2) a second dielectric layer (13) formed on an upper surface of the first dielectric layer and having a composition comprising one of metal oxide, metal nitride, metal carbide, metal oxynitride or metal cyanide nitrogen or combinations thereof.

The invention relates to the technical field of voice coil motors, in particular to a lightweight short-stroke high-thrust-density rectangular voice coil motor, which comprises a motor shell, a first magnetic group, a second magnetic group, a third magnetic group and a coil, and is characterized in that the first magnetic group, the second magnetic group and the third magnetic group are fixed in the motor shell side by side at intervals; the parallel magnetized permanent magnet is used as a main source of magnetomotive force in a magnetic circuit, and the inner shell and the vertical magnetized permanent magnet are used as assistants, so that the magnetic flux density of a gas-gap magnetic field can be greatly increased, the thrust constant and the thrust density of the motor are improved, and the thrust constant and the thrust density of the motor are improved. The non-magnetic first outer shell is adopted to ensure that most magnetic flux passes through the air gap, and the magnetic second outer shell and the magnetic inner shell are adopted to reduce the magnetic leakage of the parallel magnetized permanent magnets and enhance the air gap magnetic field.

The six-degree-of-freedom adaptive active-passive composite spatial electromagnetic array damper belongs to the technical field of precision vibration isolation, and utilizes six sets of electromagnetic vibration isolation dampers arranged in a Stewart manner between a connecting upper plate and a base plate to generate low-frequency high-damping and high-frequency low-damping characteristics in six degrees of freedom, thereby effectively and omnidirectionally isolating micro-vibration interference of different frequencies. Each set of electromagnetic vibration isolation damper is constructed by 4n (n≥1, n∈N + ) layers of equal-section magnetic rings arranged in an axial array and vertically magnetized between adjacent layers to construct a high-damping excitation magnetic field, and in real time responds to changes in an external excitation frequency, precisely controls the size and direction of a coil current through a speed feedback control method, dynamically adjusts a damping force to adapt to different working conditions, and ensures optimal vibration isolation effect. The adaptability and stability of the adaptive active-passive composite spatial electromagnetic array damper enable it to still maintain high vibration isolation performance in a multi-degree-of-freedom and frequency diversified vibration environment, thereby providing protection for the stable operation of precision instruments and equipment.

The application provides a voltage-regulated SOT-MRAM memory cell and SOT-MRAM memory, the SOT-MRAM memory cell comprising: a spin-orbit torque generation layer, a top electrode, and a magnetic tunnel junction between the spin-orbit torque generation layer and the top electrode, the magnetic tunnel junction comprising: a free layer on the spin-orbit torque generation layer, the free layer having a direction-variable perpendicular magnetization; a barrier layer on the free layer; a reference layer on the barrier layer, having a direction-fixed perpendicular magnetization; a spacer layer on the reference layer; a bias layer on the spacer layer, having a magnetization opposite to the magnetization direction of the reference layer, for generating a bias field to the free layer, wherein the saturation magnetization of the bias layer is higher than the saturation magnetization of the reference layer; and a regulation layer on the bias layer, for changing the magnetic anisotropy of the bias layer by using the VCMA effect when a voltage across the magnetic tunnel junction is applied between the top electrode and the spin-orbit torque generation layer.

The invention relates to a current-driven vertical magnetization heterojunction and a magnetic tunnel junction and a preparation method thereof. A vertically magnetized heterojunction structure may include: a spin Hall effect layer including a heavy metal material having a spin Hall effect; a ferromagnetic layer formed on the spin Hall effect layer, including an alloy of a ferromagnetic metal and a rare earth metal, where the spin Hall effect layer is configured to receive a flipping current in a first in-plane direction, the ferromagnetic layer having inclined magnetic anisotropy, the oblique magnetic anisotropy includes a perpendicular magnetic anisotropy component and an in-plane magnetic anisotropy component along a second in-plane direction, the second in-plane direction being perpendicular to the first in-plane direction.

The invention discloses an electrically-controlled vertical magnetic moment flipping method, which is characterized in that the generation of out-of-plane spin polarization current of a spin electronic device is realized by utilizing the low symmetry of a high-index crystal face of a spin source layer, and the vertical magnetic moment of a ferromagnetic layer is flipped in a spin source layer / vertical ferromagnetic layer structure. The low symmetry means that only one single-rotation symmetry axis and one mirror symmetry exist, or only one single-rotation symmetry exists. The spin source layer is of a double-layer composite structure formed by a metal material with strong spin orbit coupling or an orbit Hall layer with a metal material with a strong orbit Hall effect and a spin orbit coupling layer serving as a spin conversion layer. The spin-orbit torque device is simple in structure, practical and easy to prepare, is used for a random access memory, and can be used for high-efficiency electric regulation and control of vertical magnetization overturning under the zero magnetic field.

The application provides a magnetic tunnel junction stack structure, comprising: a spin orbit moment providing layer, a first free layer, a coupling layer, a second free layer, a barrier layer and a reference layer which are sequentially stacked from bottom to top; wherein one of the first free layer and the second free layer is in-plane magnetization mode, and the other is in perpendicular magnetization mode; and the magnetization mode of the reference layer is the same as that of the second free layer. The magnetization modes of the first free layer and the second free layer are set to different magnetization modes, and the combination of the two can adapt to various applications.

The invention discloses an electrically-controlled vertical magnetic moment overturning method, which comprises the following steps of: generating an out-of-plane orbit flow of an orbital electronics device by coupling an orbital Hall effect material and a low-symmetry crystal face of a substrate, and further converting the out-of-plane orbit flow into an out-of-plane orbit torque through a strong spin-orbit coupling material; and flipping the magnetic moment of the magnetic layer in the orbital layer / strong spin-orbit coupling layer / magnetic layer structure. The low symmetry of the substrate means that only one single-rotation symmetric axis and one mirror symmetry exist, or only one single-rotation symmetric axis exists. And the track layer is made of a metal material with a track Hall effect. And the strong spin orbit coupling layer is made of a metal material with a strong spin orbit coupling effect. The invention realizes the track electronics device which is simple in structure, practical and easy to prepare at room temperature, can be used for the random access memory and can realize high-efficiency electric regulation and control of vertical magnetization overturning under the zero magnetic field.

A voltage regulated magnetic memory cell and magnetic memory are provided. The magnetic memory cell includes a bottom electrode, a top electrode, and a magnetic tunnel junction between the bottom electrode and the top electrode. The magnetic tunnel junction includes a reference layer over the bottom electrode, the reference layer having a fixed direction of perpendicular magnetization; a barrier layer over the reference layer; a free layer over the barrier layer, the free layer having a variable direction of perpendicular magnetization; a magnetic bias layer over the free layer, the magnetic bias layer having a fixed direction of perpendicular magnetization, the magnetic bias layer having an interlayer exchange coupling with the free layer; and a regulation layer between the free layer and the magnetic bias layer, the regulation layer configured to regulate the interlayer exchange coupling between the free layer and the magnetic bias layer based on a voltage between the bottom electrode and the top electrode.

The application discloses a temperature sensor assembly, a temperature measuring method and system, and is based on a ferromagnetic film. The physical characteristics that the temperature has a relevant influence on the size of an abnormal Hall coefficient or a vertical magnetization intensity are utilized to prepare the micron size level temperature sensor device. The corresponding relationship curve between the abnormal Hall resistance difference and the temperature is established by measuring the change curve of the abnormal Hall resistance value and the vertical magnetic field size under different external temperatures. The polynomial fitting degree of the curve is high, the deviation between the test result and the fitting curve is small, and therefore the efficient measurement of the temperature in a wide measuring temperature range of 100K to 490K can be realized. Performance evaluation shows that the above-mentioned thin film structure has good vertical magnetic anisotropy, and the temperature sensor has good repeated test performance, temperature measuring durability, high temperature measuring precision and wide temperature measuring range.