29 results about "Perpendicular magnetization" patented technology

The invention belongs to the technical field of spintronics devices, and particularly relates to a vertical magnetization ferromagnetic layer field-free flipping method in an orbital electronics device. In the prior art, an orbital electronic device has the problem that a current-induced vertical magnetization ferromagnetic layer needs an external magnetic field to assist in overturning, which greatly limits the actual application of the orbital electronic device. In order to solve the problem, two technical schemes are provided, one scheme is that a wedge-shaped substrate is coated with a film, and the other scheme is that an antiferromagnetic layer is inserted between a track source layer and the substrate. According to the two technical schemes, the symmetry of the system can be broken through, and field-free overturning of the perpendicular magnetization ferromagnetic layer in the track electronics device is finally achieved.

A magnetoresistive random-access memory cell includes a first magnetic layer having a first lattice constant; a second magnetic layer having a second lattice constant; and a tunnel barrier between the first and second magnetic layers. The tunnel barrier includes at least one oxide layer with an oxide layer lattice constant. The oxide layer lattice constant has a mismatch smaller than six percent with at least one of the first and second lattice constants.

The three-degree-of-freedom micro-vibration isolator with stiffness and damping adaptive cooperative regulation belongs to the technical field of precision vibration isolation, and can realize three-degree-of-freedom near full-band vibration isolation performance under variable load. It comprises an upper plate, a base plate and three sets of low-frequency vibration isolation dampers connected between the upper plate and the base plate; the negative stiffness damping regulator in the low-frequency vibration isolation damper utilizes a multi-layer axial array of equal-section magnetic ring arrays with vertical magnetization between adjacent layers to construct a single-side high magnetic density excitation magnetic field, and coaxially nests the vertical magnetization permanent magnet ring array and the moving magnet ring array to generate high negative stiffness characteristics, and coaxially nests the coil to generate high damping characteristics; by real-time sensing the changes of the vibration isolation load mass or the excitation frequency, the size of the current in the energized coil is adjusted to generate a precisely controllable excitation magnetic flux, match the negative stiffness and damping requirements of near full-band vibration isolation, and achieve multi-directional, near full-band and high-performance vibration isolation effect.

Disclosed are a spin-orbit torque magnetic tunnel junction and a majority gate spin logic device and a cascade thereof, in the magnetic tunnel junction, comprising, from top to bottom, an electrode layer, an artificial antiferromagnetic reference layer, an insulating tunneling layer, a magnetized free layer, and an abnormal spin-orbit torque layer, wherein the artificial antiferromagnetic reference layer comprises, from top to bottom, a first ferromagnetic layer, a non-magnetic spacer layer, and a second ferromagnetic layer, the first ferromagnetic layer has a fixed direction of perpendicular magnetization; the electrode layer in contact with the first ferromagnetic layer has an in-plane polarization to adjust the magnetization direction of the second ferromagnetic layer, the magnetic free layer has a variable direction of perpendicular magnetization; the abnormal spin-orbit torque layer in contact with the magnetic free layer has an in-plane magnetization direction to generate an abnormal spin Hall effect to make the magnetic free layer magnetization flip, thereby changing the spin-orbit torque magnetic tunnel junction resistance state and realizing a logic function.

The invention provides a tunnel magnetoresistive element, a magnetic sensor module and a current sensor. The tunnel magnetoresistive element has high sensitivity in a wide magnetic field range. The TMR element (51) is provided with a fixed layer (51o), an insulating layer (51p), and a free layer (51q) which are laminated in this order in the z-axis direction, the free layer has a columnar shape extending in the z-axis direction and expanding in the horizontal direction, and the aspect ratio (t / d) obtained using the height (film thickness) t and the effective size d as the height t of the free layer in the z-axis direction and the effective size d of the free layer in the horizontal direction is 1 or more. The height t is 20 nm or more, and the effective size d is 2.57 * 10-2 [A] / Ms or less when the saturation magnetization Ms [A / nm] of the free layer is used. As a result, it is possible to form a free layer having a perpendicular magnetization structure in which the magnetic moment is uniform or substantially uniform in the z-axis direction, and it is possible to obtain a TMR element having high sensitivity over a wide magnetic field range.

The six-degree-of-freedom low-frequency vibration isolator based on vertical magnetization spatial electromagnetic array belongs to the technical field of precision vibration isolation, comprising a top plate, a base plate and six sets of low-frequency electromagnetic vibration isolators arranged in a Stewart manner. The vibration isolator can realize low-frequency, ultra-low-frequency and even near-zero-frequency vibration isolation in six degrees of freedom in space, and has high stability and strong adaptability. The vertical magnetization spatial electromagnetic array negative stiffness structure in the low-frequency electromagnetic vibration isolator utilizes coaxially nested double magnetic ring arrays to achieve passive high negative stiffness characteristics, and utilizes the energized coil coaxially nested with the double magnetic ring array to generate a precisely controllable excitation magnetic flux, dynamically adjusting the bias magnetic field and the negative stiffness value, perfectly adapting to the changing needs of different vibration isolation load masses and excitation frequencies, and ensuring stable vibration isolation performance under various working conditions. The coaxially nested vertical magnetization double magnetic ring array enhances the excitation magnetic field on the working side, reduces the magnetic leakage of the low-frequency electromagnetic vibration isolator, and improves the magnetic field utilization rate.

The application relates to a vertical magnetization anti-ferromagnetic magnetic memory without external field assistance and a storage method thereof, which comprises an anti-ferromagnetic layer, an insulating layer and a heavy metal layer from top to bottom, two groups of write currents of the anti-ferromagnetic layer and the heavy metal layer are perpendicular to each other in space, the size and direction of the two groups of write currents of the anti-ferromagnetic layer and the heavy metal layer are controlled, the upward or downward state of a Neel vector in the anti-ferromagnetic layer is controlled, and the Neel vector state represents different information of storage. The Neel vector of an anti-ferromagnetic device is regulated by using direct current to realize data writing, improve the arrangement density of a storage unit array, and save energy consumption. The vertical magnetization anti-ferromagnetic magnetic random storage unit has higher magnetic moment flip speed, better storage stability, simple structure, high speed, anti-stray field disturbance and non-volatility, and the storage unit is especially faster in reading and writing speed.

The present invention discloses a magnetic anomaly pole-localization method based on equivalent source inversion, comprising: uniformly gridding the underground space according to observation data, and constructing an equivalent source space by setting an inversion depth; obtaining a sensitivity matrix for forward and inverse calculations of magnetic survey data according to the observation data and parameters of the equivalent source space; calculating physical parameters of the equivalent source space using a generalized minimum residual method according to the sensitivity matrix and magnetic anomaly data, and constructing an equivalent source model; forward modeling the vertically magnetized geomagnetic field according to the sensitivity matrix and the equivalent source model to obtain a magnetic anomaly pole-localization result. The method reconstructs an inversion calculation framework of the equivalent source model based on the generalized minimum residual method, solves problems such as the difficulty in solving large-scale equation groups in similar inversions, improves the efficiency and accuracy of equivalent field source inversion imaging, can well achieve stable pole-localization under arbitrary geomagnetic inclination conditions, and is suitable for pole-localization processing of magnetic anomalies in regions with low geomagnetic latitudes, especially in the magnetic equatorial region.

Magnetic device comprising: (a) several vertically magnetized MTJs (11a, 11b), each of which has a side wall extending from an upper surface to a lower surface, the lower surface contacting a lower electrode (10a) and the upper surface contacting an upper electrode (14a, 14b) on a first plane parallel to the lower surface; (b) an encapsulation layer (12, 13) which adjoins the side wall from the upper surface to the lower surface of each perpendicularly magnetized MTJ and has an upper surface on the first plane, wherein the encapsulation layer has: (1) a first dielectric layer (12) comprising a lower layer (12-1) containing B or Ge, which contacts the perpendicularly magnetized MTJ side wall, and an upper layer (12-3) comprising one or more SiO Y N Z , AIO Y N z TiO Y N z , SiC y Nz or MgO, where y + z > 0; and (2) a second dielectric layer (13) formed on an upper surface of the first dielectric layer and having a composition comprising one of metal oxide, metal nitride, metal carbide, metal oxynitride or metal cyanide nitrogen or combinations thereof.

The present application relates to the vertical magnetization-based isotropic X-space magnetic particle imaging device and method, the imaging device includes scanning coil, excitation coil and vertical receiving coil, the magnetic particle in the magnetic field-free region generates the magnetic particle signal under the excitation of excitation coil magnetic field, and the vertical receiving coil receives the vertical magnetization response signal;Scanning coil drives the magnetic field-free region to traverse the imaging plane region where the object to be imaged is located, then determines the scanning track grid according to the scanning coil current, compensates according to the excitation coil current, obtains the initial image containing the corresponding relationship between the instantaneous signal and the track grid position, and reconstructs the initial image to obtain the isotropic concentration distribution image of the object to be imaged.The present application only uses a pair of mutually perpendicular excitation-receiving coils, solves the direct coupling problem of the MPI device, simultaneously utilizes the vertical magnetization signal combined with the improved X-space reconstruction method, realizes the isotropic reconstruction and real-time reconstruction.

The invention relates to the technical field of voice coil motors, in particular to a lightweight short-stroke high-thrust-density rectangular voice coil motor, which comprises a motor shell, a first magnetic group, a second magnetic group, a third magnetic group and a coil, and is characterized in that the first magnetic group, the second magnetic group and the third magnetic group are fixed in the motor shell side by side at intervals; the parallel magnetized permanent magnet is used as a main source of magnetomotive force in a magnetic circuit, and the inner shell and the vertical magnetized permanent magnet are used as assistants, so that the magnetic flux density of a gas-gap magnetic field can be greatly increased, the thrust constant and the thrust density of the motor are improved, and the thrust constant and the thrust density of the motor are improved. The non-magnetic first outer shell is adopted to ensure that most magnetic flux passes through the air gap, and the magnetic second outer shell and the magnetic inner shell are adopted to reduce the magnetic leakage of the parallel magnetized permanent magnets and enhance the air gap magnetic field.

The six-degree-of-freedom adaptive active-passive composite spatial electromagnetic array damper belongs to the technical field of precision vibration isolation, and utilizes six sets of electromagnetic vibration isolation dampers arranged in a Stewart manner between a connecting upper plate and a base plate to generate low-frequency high-damping and high-frequency low-damping characteristics in six degrees of freedom, thereby effectively and omnidirectionally isolating micro-vibration interference of different frequencies. Each set of electromagnetic vibration isolation damper is constructed by 4n (n≥1, n∈N + ) layers of equal-section magnetic rings arranged in an axial array and vertically magnetized between adjacent layers to construct a high-damping excitation magnetic field, and in real time responds to changes in an external excitation frequency, precisely controls the size and direction of a coil current through a speed feedback control method, dynamically adjusts a damping force to adapt to different working conditions, and ensures optimal vibration isolation effect. The adaptability and stability of the adaptive active-passive composite spatial electromagnetic array damper enable it to still maintain high vibration isolation performance in a multi-degree-of-freedom and frequency diversified vibration environment, thereby providing protection for the stable operation of precision instruments and equipment.

Large precision micro-vibration isolation adaptive active-passive composite space electromagnetic array damping control device belongs to the field of vibration isolation technology, adopting 4n (n≥1, n∈N + ) layers of equal-cross-section magnetic rings are arranged in an axial array and the adjacent layers are magnetized perpendicularly, forming coaxially nested inner and outer permanent magnet arrays, thereby constructing a high-magnetic-density excitation magnetic field around the conductor plate. The conductor plate produces a strong damping effect relative to the movement of the magnetic field. When the external excitation frequency changes, the current in the coaxially nested coils outside the conductor plate is precisely regulated by speed feedback, and the damping force is dynamically adjusted. In low-frequency micro-vibrations, it exhibits high damping characteristics, effectively reducing the vibration transmission rate; in high-frequency micro-vibrations, it exhibits low damping characteristics, achieving efficient attenuation of vibration interference. This active and passive composite damping control strategy enhances the adaptability and stability of large-scale precision micro-vibration isolation and its vibration isolation performance in complex vibration environments.

An example device includes a magnetic device, a first magnetic shielding, and a second magnetic shielding. The magnetic device is configured to determine a perpendicular magnetization that extends along a z-axis. The first magnetic shielding comprises a first magnetic material, the first magnetic shielding extending at least partially between a first surface of the magnetic device and a second surface of the magnetic device in the z-axis. The first surface is on an opposite side of the magnetic device from the second surface of the magnetic device. The second magnetic shielding comprises a second magnetic material, the second magnetic shielding extending at least partially between a third surface of the magnetic device and a fourth surface of the magnetic device in an x-axis. The fourth surface is on an opposite side of the magnetic device from the third surface of the magnetic device.

The application discloses a method for reducing low-latitude magnetic anomaly, comprising the following steps: S1, constructing a model space of a sample data set, wherein the model space is composed of an underground half space and a plurality of cuboid units, and the plurality of cuboid units are arranged in a combined form in a non-edge area of the underground half space; S2, performing traversal sampling and data amplification to obtain a sample data equivalent magnetic anomaly body; S3, acquiring a stable initial model by using a frequency domain suppression method; S4, taking the stable initial model and a magnetic anomaly with an arbitrary magnetization direction as inputs of a FCN network structure, taking a magnetic anomaly perpendicular to the magnetization direction as a label, and training the FCN reduction network structure; and S5, taking measured data and the stable initial model as inputs of the trained FCN reduction network structure to obtain a reduction prediction result. The application can obtain more accurate reduction results and provide technical support for geological interpretation.

The application provides a voltage-regulated SOT-MRAM memory cell and SOT-MRAM memory, the SOT-MRAM memory cell comprising: a spin-orbit torque generation layer, a top electrode, and a magnetic tunnel junction between the spin-orbit torque generation layer and the top electrode, the magnetic tunnel junction comprising: a free layer on the spin-orbit torque generation layer, the free layer having a direction-variable perpendicular magnetization; a barrier layer on the free layer; a reference layer on the barrier layer, having a direction-fixed perpendicular magnetization; a spacer layer on the reference layer; a bias layer on the spacer layer, having a magnetization opposite to the magnetization direction of the reference layer, for generating a bias field to the free layer, wherein the saturation magnetization of the bias layer is higher than the saturation magnetization of the reference layer; and a regulation layer on the bias layer, for changing the magnetic anisotropy of the bias layer by using the VCMA effect when a voltage across the magnetic tunnel junction is applied between the top electrode and the spin-orbit torque generation layer.

The invention relates to a current-driven vertical magnetization heterojunction and a magnetic tunnel junction and a preparation method thereof. A vertically magnetized heterojunction structure may include: a spin Hall effect layer including a heavy metal material having a spin Hall effect; a ferromagnetic layer formed on the spin Hall effect layer, including an alloy of a ferromagnetic metal and a rare earth metal, where the spin Hall effect layer is configured to receive a flipping current in a first in-plane direction, the ferromagnetic layer having inclined magnetic anisotropy, the oblique magnetic anisotropy includes a perpendicular magnetic anisotropy component and an in-plane magnetic anisotropy component along a second in-plane direction, the second in-plane direction being perpendicular to the first in-plane direction.

A magnetoresistive random-access memory cell (1202) includes a first magnetic layer having a first lattice constant; a second magnetic layer having a second lattice constant; and a tunnel barrier between the first and second magnetic layers. The tunnel barrier includes at least one oxide layer with an oxide layer lattice constant. The oxide layer lattice constant has a mismatch smaller than six percent with at least one of the first and second lattice constants.

The large precision micro-vibration isolation damper based on multiple sets of vertical magnetization space permanent magnet arrays belongs to the technical field of precision vibration isolation. The inner magnetic array and the outer magnetic array utilize four columns of multi-layer array arrangement and adjacent layer vertical magnetization of equal cross-section cubic permanent magnets to form a high magnetic density excitation magnetic field around the conductor plate. When the conductor plate moves relative to the inner magnetic array and the outer magnetic array, a strong eddy current effect is excited to generate high damping characteristics. The design of the vertical magnetization space permanent magnet array enhances the magnetic flux change and the eddy current density, greatly improves the damping force, accelerates the decay efficiency of vibration energy, and provides strong technical support for large ultra-precision manufacturing, cutting-edge scientific research experiments and other fields, and ensures the stability of high-end equipment.

The invention discloses an electrically-controlled vertical magnetic moment flipping method, which is characterized in that the generation of out-of-plane spin polarization current of a spin electronic device is realized by utilizing the low symmetry of a high-index crystal face of a spin source layer, and the vertical magnetic moment of a ferromagnetic layer is flipped in a spin source layer / vertical ferromagnetic layer structure. The low symmetry means that only one single-rotation symmetry axis and one mirror symmetry exist, or only one single-rotation symmetry exists. The spin source layer is of a double-layer composite structure formed by a metal material with strong spin orbit coupling or an orbit Hall layer with a metal material with a strong orbit Hall effect and a spin orbit coupling layer serving as a spin conversion layer. The spin-orbit torque device is simple in structure, practical and easy to prepare, is used for a random access memory, and can be used for high-efficiency electric regulation and control of vertical magnetization overturning under the zero magnetic field.

High-end instrument equipment heavy load precision gas magnetic composite low frequency micro-vibration isolator belongs to the technical field of precision vibration isolation, which is coaxially nested by a moving magnetic ring array and a fixed magnetic ring array, and the moving magnetic ring array and the fixed magnetic ring array are both composed of 2n+1 (n >= 1, n belongs to N + ) layers of equal-section magnetic rings arranged in an axial array and vertically magnetized between adjacent layers, and the overall structure is symmetric about the n+1 layer of magnetic rings; the first layer of magnetic rings of the moving magnetic ring array and the fixed magnetic ring array are radially oppositely magnetized, and their bottom surfaces coincide; with each additional layer, the magnetization direction of the moving magnetic ring rotates clockwise by 90 degrees, while the magnetization direction of the fixed magnetic ring rotates counterclockwise by 90 degrees; the present application has a simple structure, is easy to install and maintain, can produce high negative stiffness and zero magnetic force characteristics, and can reduce the dynamic vibration isolation stiffness without changing the heavy load precision micro-vibration bearing of tens of tons to thousands of tons, thereby realizing low-frequency or near-zero-frequency vibration isolation.

The application provides a differential storage unit and a multi-resistance state storage unit, both of which comprise a spin-orbit torque generating layer and two magnetic tunnel junctions, the two magnetic tunnel junctions are arranged in parallel at a certain interval on the same side surface of the spin-orbit torque generating layer, the cross-sectional shape of the two magnetic tunnel junctions is both an arcuate shape, and the direction of the chord of the arcuate shape is kept parallel, wherein each magnetic tunnel junction comprises a free layer, a barrier layer and a reference layer, the free layer is close to the spin-orbit torque generating layer, and the free layer and the reference layer are both vertically magnetized. By changing the direction of the write current in the spin-orbit torque generating layer, differential storage and multi-resistance state storage can be realized respectively.

The application provides a magnetic tunnel junction stack structure, comprising: a spin orbit moment providing layer, a first free layer, a coupling layer, a second free layer, a barrier layer and a reference layer which are sequentially stacked from bottom to top; wherein one of the first free layer and the second free layer is in-plane magnetization mode, and the other is in perpendicular magnetization mode; and the magnetization mode of the reference layer is the same as that of the second free layer. The magnetization modes of the first free layer and the second free layer are set to different magnetization modes, and the combination of the two can adapt to various applications.

Provided are: a perpendicular magnetization film which exhibits high perpendicular magnetic anisotropy by using a Co-based alloy having a specific structure that is a physical principle different from the perpendicular magnetization of FeCoB / MgO; and a perpendicular magnetization magnetoresistance effect element. This perpendicular magnetization film comprises: a perpendicular magnetization magnetic layer; a non-magnetic layer provided at an upper part of the magnetic layer; and a base layer provided at a lower part of the magnetic layer, wherein the magnetic layer has an alloy containing Co as a main component and having a bct crystal structure, and the alloy contains the Co and Mn.

The application discloses a magnetic tunnel junction with high thermal stability, comprising a reference layer, a barrier layer, a first free layer, a magnesium oxide layer and a cover layer which are sequentially stacked, wherein the reference layer has direction-fixed vertical magnetization; the barrier layer is used for generating a tunneling effect; the first free layer has direction-variable vertical magnetization and changes atomic magnetic moment by doping a nonmetallic element, so as to reduce saturation magnetization and enhance vertical magnetic anisotropy; the magnesium oxide layer is used for enhancing the vertical magnetic anisotropy with the first free layer; and the cover layer is used for reducing a damping coefficient, so as to reduce a critical current. The magnetic tunnel junction changes atomic magnetic moment by doping a nonmetallic element in a magnetic metal layer, so as to reduce saturation magnetization and enhance vertical magnetic anisotropy, thereby significantly improving the thermal stability of the magnetic tunnel junction, realizing miniaturization of a magnetic memory while ensuring the thermal stability, and being simple in structure and convenient for production and manufacturing.

The invention discloses an electrically-controlled vertical magnetic moment overturning method, which comprises the following steps of: generating an out-of-plane orbit flow of an orbital electronics device by coupling an orbital Hall effect material and a low-symmetry crystal face of a substrate, and further converting the out-of-plane orbit flow into an out-of-plane orbit torque through a strong spin-orbit coupling material; and flipping the magnetic moment of the magnetic layer in the orbital layer / strong spin-orbit coupling layer / magnetic layer structure. The low symmetry of the substrate means that only one single-rotation symmetric axis and one mirror symmetry exist, or only one single-rotation symmetric axis exists. And the track layer is made of a metal material with a track Hall effect. And the strong spin orbit coupling layer is made of a metal material with a strong spin orbit coupling effect. The invention realizes the track electronics device which is simple in structure, practical and easy to prepare at room temperature, can be used for the random access memory and can realize high-efficiency electric regulation and control of vertical magnetization overturning under the zero magnetic field.

A voltage regulated magnetic memory cell and magnetic memory are provided. The magnetic memory cell includes a bottom electrode, a top electrode, and a magnetic tunnel junction between the bottom electrode and the top electrode. The magnetic tunnel junction includes a reference layer over the bottom electrode, the reference layer having a fixed direction of perpendicular magnetization; a barrier layer over the reference layer; a free layer over the barrier layer, the free layer having a variable direction of perpendicular magnetization; a magnetic bias layer over the free layer, the magnetic bias layer having a fixed direction of perpendicular magnetization, the magnetic bias layer having an interlayer exchange coupling with the free layer; and a regulation layer between the free layer and the magnetic bias layer, the regulation layer configured to regulate the interlayer exchange coupling between the free layer and the magnetic bias layer based on a voltage between the bottom electrode and the top electrode.

The application discloses a temperature sensor assembly, a temperature measuring method and system, and is based on a ferromagnetic film. The physical characteristics that the temperature has a relevant influence on the size of an abnormal Hall coefficient or a vertical magnetization intensity are utilized to prepare the micron size level temperature sensor device. The corresponding relationship curve between the abnormal Hall resistance difference and the temperature is established by measuring the change curve of the abnormal Hall resistance value and the vertical magnetic field size under different external temperatures. The polynomial fitting degree of the curve is high, the deviation between the test result and the fitting curve is small, and therefore the efficient measurement of the temperature in a wide measuring temperature range of 100K to 490K can be realized. Performance evaluation shows that the above-mentioned thin film structure has good vertical magnetic anisotropy, and the temperature sensor has good repeated test performance, temperature measuring durability, high temperature measuring precision and wide temperature measuring range.