429 results about "Nanopillar" patented technology

The invention provides a super lens and a femtosecond laser manufacturing real-time monitoring system applying the super lens, the super lens comprises a substrate and a nano column array on the substrate, nano columns at different positions in the nano column array independently regulate and control a first wavelength light wave and a second wavelength light wave, so that the first wavelength light wave satisfies first phase distribution, and the second wavelength light wave satisfies second phase distribution. The second wavelength light wave meets the second phase distribution, so that the super lens not only can focus the first wavelength light wave and the second wavelength light wave on the same plane, but also can control the focal depth of the first wavelength light wave to be greater than the focal depth of the second wavelength light wave, so that the requirement of a femtosecond laser manufacturing real-time monitoring system is met; not only can the anti-interference capability in the machining process be improved, but also the axial position monitoring precision can be improved.

The invention discloses a high-detection-efficiency long-wave infrared spectrum imaging device and an imaging method, and belongs to the field of micro-nano optical design, the scheme is as follows: a metasurface spectrum modulation layer is composed of a square matrix formed by arranging a plurality of metasurface periodic units in sequence, and each metasurface periodic unit is composed of a plurality of metasurface structure units; each metasurface structure unit comprises a substrate and a plurality of nano columns, and the plurality of nano columns are distributed on the substrate in a C4 symmetrical structure; reverse design of the high-transmittance metasurface structure units is achieved through a particle swarm optimization algorithm, and structure parameters of the high-transmittance metasurface structure units are obtained; incident light passes through the metasurface spectrum modulation layer to realize spectrum coding, coding information is converted into an electric signal by a long-wave infrared focal plane detection pixel below, and a high-resolution long-wave infrared spectrum image can be reconstructed in cooperation with a deep neural network algorithm. The spectral imaging method provided by the invention is perfectly compatible with semiconductor and MEMS technologies, and long-wave infrared band spectral imaging with high detection efficiency is realized.

The resolution-customizable micro spectrometer based on the transverse dispersion metasurface comprises a dispersion metasurface array structure and a focal plane pixel array, and the dispersion metasurface array structure comprises a plurality of dispersion metasurface sub-arrays which are distributed in an array mode and used for preliminary spectrum decoupling and directional convergence. The dispersion metasurface subarray comprises a plurality of dispersion metasurface units and all-dielectric substrates thereof, the dispersion metasurface units are nano-columns with four-fold symmetry, the nano-columns are periodically arranged, and the phase of transmission light is dynamically regulated and controlled according to the frequency omega of incident light. The focal position (x ', y') of the transmission light on the focal plane is in a linear mapping relation along with the change of the omega; the focal plane pixel array comprises a multi-element plane array composed of a plurality of pixels, and the multi-element plane array is in pixel-level registration with the dispersion metasurface sub-array. According to the invention, pixel-level precise condensation is realized, crosstalk is effectively inhibited, the detection precision is improved, and real snapshot spectral imaging is realized.

The invention relates to the technical field of topological photonic crystals, in particular to a topological energy valley photonic crystal, a broadband topological slow light waveguide and a topological beam splitter. The crystal comprises a substrate and a nanorod array arranged on the substrate, the nanopillar array is formed by arranging a plurality of unit cells with honeycomb structures, and the two-dimensional cross section of each unit cell is a regular hexagon; each unit cell is formed by arranging two kinds of nano columns with different section diameters at intervals; two adjacent unit cells share one edge; the two nano columns with different section diameters are respectively a first nano column and a second nano column, and the diameter of the first nano column is twice that of the second nano column; and the value range of the lattice constant a is 480-520 nm. The method has the advantages that the problem of broadband slow light regulation and control in the topological optical waveguide is solved; brillouin region winding of an energy valley boundary state mode is realized, and the group velocity of a light mode is reduced; the light transmission robustness is improved; the back scattering loss caused by manufacturing defects and disorder is reduced; and the applicable frequency range of the device is widened.

The invention provides a patterned photonic crystal laser and a preparation method thereof, the laser comprises a substrate, and a first mask layer, a photonic crystal layer and a second mask layer which are sequentially deposited on the substrate, a light emitting area is etched in the central area of the second mask layer, and transparent conductive layers are deposited on the surface of the second mask layer and the light emitting area; a p-annular electrode is arranged on the surface of the transparent conductive layer on the second mask layer, and an n-annular electrode is arranged below the substrate; the photonic crystal layer is composed of a nanorod array and a polymer filled in gaps of nanorods; holes distributed in a patterned array are etched in the surface of the first mask layer, and nanorods are epitaxially grown in hole areas; the nanorod is formed by sequentially depositing a substrate contact layer, a first waveguide layer, a multi-quantum well layer, a second waveguide layer, a coating layer and a component gradient layer. According to the invention, through collaborative design optimization of all the layers, emission of laser with specific wavelength and preparation of a laser emitting laser with single longitudinal mode, narrow linewidth and stable wavelength are realized.

The invention discloses a multi-wavelength high-color-difference metasurface color holographic device and a design method thereof.The method comprises the steps that firstly, a nano-column super unit is simulated and then serves as training data of a four-port neural network model, a well-trained forward prediction model is obtained, a prediction response database is constructed, and the prediction response database is used as a prediction result; and according to the phase demand of the target image, a corresponding unit structure is matched in the prediction response database, the multi-wavelength high-chromatic-aberration metasurface color holographic device is designed, and full-mode electromagnetic simulation is carried out. According to the scheme, when holographic imaging is achieved, the RGB energy efficiency is improved, and positive illumination high-efficiency metasurface color holographic imaging can be effectively achieved. The method belongs to a non-filtering type multi-wavelength high-color-difference metasurface color holographic device design method, information of three channels of red, green and blue is coded into sub-pixels at the same time, each sub-pixel responds to RGB light, and compared with a traditional mode that RGB sub-pixels respond respectively, the space utilization rate and energy efficiency of three primary colors are greatly improved.

The invention provides a spectrometer system comprising a spectrometer chip comprising a camera and a metasurface located on a detection surface of the camera; the metasurface comprises a plurality of nano-pore or nano-column arrays, and selective absorption of light with different wavelengths is realized through surface plasmons generated by different nano-pores or nano-columns; the camera detects the intensity change of light to be detected after the light passes through different nano-pores or nano-column arrays of the metasurface, and then spectral information is obtained through calculation. According to the spectrograph system, selective absorption of light with different wavelengths is achieved through the metasurface, and then spectral information is obtained through calculation, so that the structure of the spectrograph system is compact, and the overall size is very small; and the plasmon generated by the nanopore or nanopillar array has high tolerance to the structure size, so that the processing precision is lower, and large-area and large-batch preparation can be realized.

The invention belongs to the technical field of solar cell materials, and discloses a GaAs solar cell with a moth-eye micro-nano structure anti-reflection layer and a preparation method of the GaAs solar cell in order to enhance the solar spectrum utilization rate and improve the photoelectric conversion efficiency of the solar cell. The method comprises the following steps: growing a thin film with a nano-column structure on a Si substrate with a SiO2 layer in an MBE autocatalytic growth mode, spin-coating PMMA on the surface of the thin film, and transferring the nano-column structure to a GaAs and carbon nanotube heterojunction solar cell through a two-dimensional material wet transfer technology to prepare the solar cell with the moth-eye micro-nano structure anti-reflection layer. Compared with a nanoimprint lithography technology and a photolithography technology, the method provided by the invention is more convenient to operate and more environment-friendly, and does not need to use some harmful gases and harmful chemicals to etch the micro-nano structure. According to the GaAs heterojunction solar cell with the moth-eye bionic micro-nano structure anti-reflection layer prepared by the method, the material used by the anti-reflection layer is not limited, and the utilization rate of sunlight can be remarkably improved, so that the photoelectric conversion efficiency of a device is remarkably improved.

The invention provides a metasurface and an optical device for realizing total-space asymmetric optical operation, the metasurface comprises a first layer and a second layer, and the first layer and the second layer are connected; the first layer is uniformly provided with first metasurface units, the second layer is uniformly provided with second metasurface units, the first metasurface units are provided with first nano-columns, and the first nano-columns are provided with first inclination angles in an overlook plane of the first layer; and the second super-structure surface unit is provided with a second nano-column and a third nano-column. According to the scheme, when an x-polarized light beam enters the surface of the metasurface from the first layer, the x-polarized light beam directly penetrates through the first layer and is converted into a y-polarized light beam by the second layer. And when an x polarized light beam is incident on the metasurface from the second layer, the x polarized light beam is firstly converted into a y polarized light beam by the second layer and is reflected by the first layer, that is, the scheme can convert into multiplexing according to the incident direction according to the total space metasurface of incident polarization.

The invention discloses a nano-pillar array NaKSb photoelectric cathode for enhancing light absorption, which is characterized in that through the design of a double-layer TiOtwo-dimensional nano grating and a nano-pillar array structured NaKSb photoelectric cathode layer, the optical path of light with the wave band of 450-900 nm in the photoelectric cathode is increased under the condition that the thickness of the NaKSb photoelectric cathode is not increased, the reflectivity of the wave band of 400-600 nm is reduced, and the light absorption of the NaKSb photoelectric cathode is enhanced. The absorption rate at 400-1000 nm is improved by 32.28% compared with that of a traditional planar film type photoelectric cathode, the absorption rate at 800-1000 nm near-infrared band is improved by 40.27% compared with that of the traditional planar film type photoelectric cathode, the problem that the absorption of the traditional planar film type photoelectric cathode near-infrared band is insufficient is solved, and the photoelectric cathode is suitable for high-performance low-light night vision imaging devices.

The invention discloses a single-layer metasurface near-far field asymmetric image display device and method, and relates to the technical field of metasurface optics. The metasurface is formed by periodically arranging diatomic super units composed of direction-insensitive atomic nano-columns and direction-sensitive atomic nano-columns, and asymmetric image display of a near field and a far field is achieved by decoupling polarization and phases of forward and reverse incident light. When the same linearly polarized light enters from the forward direction and the reverse direction respectively, the metasurface can generate different or the same holographic image in a far field and generate a binary image or no image in a near field, and three-channel image display (two holograms and one binary image or two binary images and one hologram) can be realized by controlling the incident light direction and the super-unit structure parameters. The method does not need a multi-layer structure, simplifies the design, expands an image display channel, and can be applied to the fields of optical anti-counterfeiting, information encryption and the like.

The invention discloses a dynamic linear polarization device design based on a phase-change diatomic metasurface, and relates to the technical field of phase-change metasurfaces, and the linear polarization device is a single-layer metasurface formed by a super unit composed of a dielectric material nano column 1 and a phase-change material nano column 2. Wherein the nanorod 1 is represented as a half-wave plate and is responsible for realizing the conversion of a polarization state, and the nanorod 2 can realize the change of a phase from 0 to pi by changing the state of a phase change material, so that the effect of maintaining the polarization is achieved. When light rays act on the two kinds of nano-columns at the same time, the nano-columns 2 allow transmission light to keep the original polarization state of incident light, and the nano-columns 1 change the polarization state of the transmission light. And the two kinds of transmission light are superposed subsequently, so that the transmission light output by the whole super-unit shows the linear polarization characteristic, and the polarization angle of the transmission light and the rotation angle of the nano-column are kept consistent or form an orthogonal relationship. According to the invention, a phase-change diatomic structure is adopted, so that the metasurface can realize a linear polarizer with an adjustable polarization angle under the incidence of any polarization angle.

The invention discloses a shape memory polymer micro-nano column array preparation method based on femtosecond laser processing, and belongs to the technical field of bionic adhesive materials. According to the method, an epoxy resin type shape memory polymer serves as a matrix, an anodic aluminum oxide template and a femtosecond laser micromachining technology are combined, a nano-column array is formed through AAO template copying, then a micron-column array is formed on the surface of the template through femtosecond laser machining, and finally the micron-nano composite column array with the gecko foot imitating structure is obtained. The method has the advantages of being high in machining precision, high in structural controllability, simple in process, capable of achieving large-area preparation and the like, and is suitable for material preparation in the fields of bionic adhesion, micro-nano sensing, intelligent surfaces and the like.

The invention relates to a silicon oxide filled GST phase change shallow trench pixel-level electronic control metasurface structure and a processing method thereof. The metasurface structure comprises a silicon substrate, a silicon oxide layer and a top ITO electrode from bottom to top. A shallow trench is arranged in the silicon oxide layer, and a bottom layer ITO electrode and a GST nano column are deposited in the shallow trench from bottom to top; the GST nanorod is made of a GST phase change material and is connected with the bottom layer ITO electrode and the top layer ITO electrode; the bottom layer ITO electrode and the top layer ITO electrode are arranged in an orthogonal mode. According to the method, the problem of phase change structure damage caused in high-temperature deposition and plasma etching processes is solved, meanwhile, the process complexity and the process stability are optimized, and the metasurface machining cost is reduced.

The embodiment of the utility model provides a bonding structure, and the bonding structure comprises a first bonding pad and a first nanowire structure, and the first nanowire structure comprises a first buffer nanorod disposed on the first bonding pad; and the conductive layer is arranged on the first bonding pad and the first buffer nano column, and the conductive layer wraps the outer side wall of the first buffer nano column. According to the technical scheme, the bonding structure at least can provide more stable bonding through the first buffer nanorod with the outer side wall covered by the conductive layer.

The invention discloses a preparation method of a micron-sized metal thin film array, and belongs to the technical field of thin film deposition processes. A micron-sized metal thin film array is prepared by adopting an unbalanced magnetic field cathode and using a vertical sputtering mode, the thickness of a metal thin film is 100-500nm, and a thin film grain growth mode is a nano columnar crystal. The preparation method comprises the following steps: (1) through combination of a magnetron sputtering method and a mask layer, a circular metal film array with the diameter consistent with that of holes in the surface of the mask layer can be precisely prepared on a large scale; (2) a non-equilibrium magnetic field cathode is used, plasma can be restrained on the surface of the target material, the utilization rate of the target material is improved, and meanwhile, sputtered target material atoms are restrained, so that the target material atoms can vertically pass through holes of the mask layer and are deposited on the surface of the substrate; and (3) the metal film array with uniform size and consistent thickness can be obtained by adjusting the technological parameters during magnetron sputtering, such as air pressure, power, target-substrate distance and rotating speed, so that the preparation difficulty of the film array is effectively reduced, and meanwhile, the film quality is improved.

The invention discloses a cascade metasurface-based dual-function tunable optical device and a design method, and relates to the technical field of tunable metasurfaces. According to the optical device, high-refractive-index medium nano-columns with different sizes are arranged on an upper low-refractive-index medium substrate and a lower low-refractive-index medium substrate according to a specific mode to form a cascade metasurface structure, an upper metasurface and a lower metasurface included in the cascade metasurface have independent 2pi phase regulation and control capabilities under two kinds of orthogonal polarized light, and the two layers of metasurfaces have independent 2pi phase regulation and control capabilities under two kinds of orthogonal polarized light. Two wavefront regulation and control functions of polarization multiplexing can be realized; furthermore, the cascaded metasurface device adopts a mechanical tuning mode, and dynamic tuning of a double-wavefront regulation and control function can be realized by controlling relative horizontal displacement between the upper and lower layers of metasurfaces. Wherein the total phase of the cascaded metasurface is represented as a dynamic functional phase 1 under the polarization state 1, and is represented as a dynamic functional phase 2 under the polarization state 2. According to the invention, the double-layer structure design of the cascade metasurface is adopted, the total phase of the cascade metasurface is a dynamic deflection phase under X polarization by taking the functions of light beam dynamic scanning and a zoom lens as examples, and the displacement-related light beam deflection can be realized under different relative displacement conditions; and under Y polarization, a dynamic focusing phase is presented, and focal length adjustment along with relative displacement change can be realized. That is, the cascaded metasurface is an optical device which realizes dual-function dynamic tuning through horizontal displacement.

The invention discloses a Co monatomic modified alpha-Fe2O3 nanorod photo-anode and a preparation method and application thereof.The preparation method comprises the steps that during preparation, fluorine-doped SnO2 (FTO) conductive glass serves as a matrix, and an alpha-Fe2O3 nanorod precursor is prepared through a hydrothermal synthesis method; the preparation method comprises the following steps: taking Co (NO3) 2.6 H2O, Zn (NO3) 2.6 H2O and 2-methylimidazole as main raw materials, and preparing a Co monatomic catalyst by adopting a normal-temperature chemical method; then, the Co monatomic catalyst and the precursor alpha-Fe2O3 are rapidly sintered in ultra-high-temperature flame by using methane premixed flame. The Co monatomic catalyst is modified on the surface of the alpha-Fe2O3 nanorod, so that on one hand, the compounding of photo-induced electrons and holes is inhibited, and the charge transfer efficiency in the electrode and the charge transfer efficiency at a solid-liquid interface are improved; on the other hand, the Co SACs are used as active sites of the ammoxidation reaction, and photoelectrocatalysis ammonia decomposition is achieved.

The invention relates to an optomechanical system for monitoring the mechanics of a sample, comprising: a photonic crystal (1, 2) with a substrate (1) and an array of transversally extending nanopillars (2) defining at least one row (3); a nanopillar cavity (4) for confining light and acting as a sensor for the sample; and a mirror region (5) formed in the array of nanopillars (2), the cavity (4) and the mirror region (5) being configured to prevent the propagation of light with Transverse-Magnetic (TM) polarization; the nanopillars (2) being spatially arranged to create a gradient of effective refractive index along the cavity (4), the maximum value of the effective refractive index inside the cavity (4) being lower than the effective refractive index of the mirror region (5).

Disclosed herein are approaches for forming nanopillars of an image sensor. One method of forming an image sensor may include forming an etch stop layer atop a spacer layer, wherein the spacer layer is formed over a color filter, and forming a first optical material layer over the etch stop layer. The method may further include forming a plurality of pillars from the optical material layer, forming an opening through a first pillar of the plurality of pillars, the opening exposing the etch stop layer, and removing the etch stop layer by performing a wet etch through the opening, wherein the wet etch forms a cavity beneath the plurality of pillars. The method may further include forming a second optical material layer within the cavity.

The invention belongs to the technical field of microstructures, and discloses a preparation method and application of an ALD modified nano microstructure film, and the method comprises the following steps: adopting a magnetron sputtering method to form an Ag atomic layer on the surface of a PTFE film as an etching mask plate; blowing plasma over the surface of the mask plate by adopting an ICP reactive ion etching method to form a nanorod morphology; a first precursor Al2 (CH3) 3 and a second precursor H2O are alternately used, chemical adsorption and reaction are carried out on the surface of the obtained PTFE, an AlOx insulating layer is formed, the range of x is 1-2, and finally the ALD modified nanometer microstructure film is obtained. The film prepared through the method has a microstructure, distribution of electrons at the tip of the microstructure enables the effective area of charges on the same plane to be reduced, and the performance of the ALD modified nanometer microstructure film is improved. The relative polarization field intensity is reduced, and the performance of the friction nanometer generator is enhanced.

The invention provides a preparation method of a high-quality gallium nitride film based on a porous silicon nitride insertion layer. The preparation method comprises the following steps: firstly, sequentially depositing a GaN low-temperature buffer layer and a u-GaN layer subjected to compression strain on a patterned sapphire substrate; a porous SiNx insertion layer is deposited on the u-GaN layer in situ, a nanoscale hole structure penetrating in the thickness direction is formed in the porous SiNx insertion layer, and the u-GaN layer is exposed at holes; then GaN nanorods vertically grow at the holes, finally, growth conditions are regulated and controlled to enable the GaN nanorods to transversely grow and combine to form a flat high-quality GaN thin film, and a gap is formed between the porous SiNx insertion layer and the GaN thin film. According to the method, the internal stress of the GaN film can be effectively reduced, the dislocation density is reduced, the film quality is improved, the process is simple, and the method is suitable for large-scale and low-cost industrial production of the GaN film.

The invention provides a super-lens based on a double-coupling structure, and relates to the field of optical zooming, the super-lens comprises a substrate and a phase wave front arranged on the substrate, the phase wave front is composed of a plurality of nano-columns arranged periodically, a corresponding phase distribution value is given according to the position point of each nano-column, and the phase distribution value is calculated according to the position point of each nano-column. The phase wavefront is arranged on the substrate, the phase wavefront is arranged on the substrate, the phase wavefront is arranged on the phase wavefront, the nanometer columns are arranged on the phase wavefront to convert plane waves incident to the phase wavefront into light beams focused at a specified focal length, each nanometer column has the same rectangular cross section, a slit is formed in the long axis direction of each nanometer column, and the slits penetrate through the nanometer columns and extend to the surface of the substrate. And thus, the nano-columns form a double-coupling structure. According to the invention, the focusing efficiency of the super lens can be improved.

The invention discloses a preparation method of a shape memory polymer nanorod array, and belongs to the technical field of bionic adhesive materials. According to the method, on the basis of an anodic aluminum oxide template, hydrophilic or hydrophobic chemical modification is carried out on the surface of the anodic aluminum oxide template, the surface wettability of a template pore channel is adjusted, and then the permeation behavior of an epoxy resin precursor in the pore channel is controlled. The preparation method comprises the following specific steps: modifying an AAO template, preparing and defoaming an epoxy resin mixture, filling the template, curing, removing an aluminum substrate, dissolving an aluminum oxide layer, and finally obtaining the shape memory polymer nanorod array with high Young modulus (1-20 GPa). According to the method, a template method is combined with chemical modification, the process steps are clear, the conditions are mild, the method is particularly suitable for preparing a hard micro-nano composite structure matched with the mechanical property of a gecko script characteristic material, and an effective technical support is provided for research of a high-performance dry adhesive material.

A surface-enhanced Raman scattering substrate, including: a base layer; a nanopillar structure layer, which is formed on the base layer by means of nanoimprint lithography, and has a nanopillar array structure; and a thin film, which covers and is formed, by means of an oblique deposition evaporation process, on the top of the nanopillar array structure and at least one vertical side wall of the nanopillar array structure, wherein the thin film has a surface-enhanced Raman scattering effect and has an oblique angle.

The invention relates to a GaN-based micro-disk laser with a diamond nano-composite current barrier layer. The laser comprises a substrate layer and a lower contact layer which are sequentially arranged along the epitaxial growth direction of a chip, the middle of the upper surface of the lower contact layer is a lower cladding; a lower waveguide layer, a quantum well active layer and an upper waveguide layer are sequentially arranged at the upper part of the lower cladding; the electron blocking layer is of an annular structure and is distributed on the outer side of the upper surface of the upper waveguide layer. The electron blocking layer is sequentially covered with an upper cladding layer and an upper contact layer; a central region between the upper surface of the upper waveguide layer and the upper surface of the upper contact layer is filled with a nano composite current blocking layer and overflows out of the upper surface of the upper contact layer; rectangular array nano columns are arranged in the nano composite current blocking layer. Through the good heat dissipation performance of the diamond nanorod structure, the service life of the device is prolonged, the expansion of current to the central area is effectively relieved, and the threshold current of the device is reduced.

The invention discloses a phase and amplitude coordinated regulation and control method based on a double-layer transmission phase metamaterial lens, two layers of metamaterial lenses are stacked up and down to construct the double-layer transmission phase metamaterial lens, and an upper subunit structure and a lower subunit structure in the double-layer transmission phase metamaterial lens correspond up and down to form a super-unit structure; according to the total phase and the total amplitude required by the super-unit structure, the amplitudes and phases of the upper and lower subunit structures and the width of the nano-column are obtained respectively, and according to the relation between the total amplitude and the total phase and the amplitude of the lower subunit structure and the relation between the total phase and the phase of the upper subunit structure, the amplitude and the phase of the super-unit structure are subjected to double-parameter separation regulation and control; on the basis of a single-layer polarization insensitive super-structure lens, an amplitude regulation and control layer is added, a double-layer transmission phase super-structure lens theoretical model is provided, simultaneous coordinated regulation and control of amplitude and phase are achieved, and the dimension of super-structure surface parameter regulation and control is expanded.

The invention provides a large-area polycrystalline diamond GaN heterostructure with a slowly-changing Sc component transition layer and a preparation method of the large-area polycrystalline diamond GaN heterostructure. The preparation method comprises the steps that polycrystalline diamond is pretreated, and a polycrystalline diamond substrate is obtained; performing etching mask deposition and patterning on the polycrystalline diamond substrate, and forming a plurality of nano columnar structures in the upper region of the polycrystalline diamond substrate; carrying out magnetron sputtering on a first ScAlN transition layer with 35% of Sc component at the nano columnar structure; epitaxially growing a second ScAlN transition layer with 30% of Sc component on the first transition layer; epitaxially growing a third ScAlN transition layer with 20% of Sc component on the second transition layer; epitaxially growing a fourth ScAlN transition layer with 10% of Sc component on the third transition layer; and epitaxially growing a GaN epitaxial layer on the fourth transition layer. According to the method, the magnetron sputtering technology and the epitaxial ScAlN technology are combined, the respective advantages are exerted, the large-area and high-quality diamond-based GaN silbby batch is prepared, and good conductivity, high thermal stability and high reliability are achieved.

The invention discloses a metasurface device combined with an F-P (Fabry-Perot) cavity, the metasurface device structurally comprises an upper reflecting layer, a metasurface layer and a lower reflecting layer, the upper high reflecting layer and the lower high reflecting layer form a micro-nano F-P cavity, and the metasurface layer in the middle is formed by an anisotropic medium nano column array. Based on the wavelength selection principle of the F-P cavity, narrow-band filtering can be realized; based on a geometric phase principle, phase regulation and amplitude regulation can be realized by arranging medium nano-columns with specific shapes, sizes and azimuth angles. The geometric phase metasurface is embedded into the micro-nano F-P cavity, and the wavelength, the phase and the amplitude of a light field can be modulated independently at the same time. The invention has the advantages of flexible design, compact structure, strong regulation and control capability, high regulation and control degree of freedom and the like, and has very high application prospects in various practical applications such as light field regulation and control, color printing and holographic display, information storage, optical anti-counterfeiting and the like.

To provide a metasurface structure capable of accurately controlling the state of incident light by suppressing defective formation of nanopillars, and to provide a mold for transferring the metasurface structure.SOLUTION: A metasurface structure of a metalens 10 comprises multiple nanopillars 12 arranged on a support surface 11S of a substrate 11. The multiple nanopillars 12 include nanopillars 12 with different heights H and widths W and are configured such that smaller the width W, the lower the height H. Each nanopillar 12 shifts the phase of light having a specific wavelength according to the position of the nanopillar 12 on the support surface 11S.SELECTED DRAWING: Figure 1