268 results about "Regular array" patented technology

Random arrays of single molecules are provided for carrying out large scale analyses, particularly of biomolecules, such as genomic DNA, cDNAs, proteins, and the like. In one aspect, arrays of the invention comprise concatemers of DNA fragments that are randomly disposed on a regular array of discrete spaced apart regions, such that substantially all such regions contain no more than a single concatemer. Preferably, such regions have areas substantially less than 1 μm2 and have nearest neighbor distances that permit optical resolution of on the order of 109 single molecules per cm2. Many analytical chemistries can be applied to random arrays of the invention, including sequencing by hybridization chemistries, sequencing by synthesis chemistries, SNP detection chemistries, and the like, to greatly expand the scale and potential applications of such techniques.

A method of forming a periodic array of nano-scale objects using a block copolymer, and nano-scale object arrays formed from the method are provided. The method for forming the arrays generally includes the steps of depositing a block copolymer of at least two blocks on a substrate to form an ordered meso-scale structured array of the polymer materials, forming catalytic metal dots based on the meso-scale structure, and growing nano-scale objects on the catalytic dots to form an ordered array of nano-scale objects.

Methods are provided for fabricating FinFET integrated circuits on bulk semiconductor substrates. In accordance with one embodiment a patterned hard mask that defines locations of a regular array of a plurality of fins is formed overlying a semiconductor substrate. Portions of the patterned hard mask are removed using a cut mask to form a modified hard mask. The substrate is etched using the modified hard mask as an etch mask to form a plurality of fins extending upwardly from the substrate and separated by trenches. Selected ones of the plurality of fins are at least partially removed to form isolation regions and an insulating material is deposited to fill the trenches and to cover the at least partially removed selected ones of the plurality of fins.

A method to form a closed air gap interconnect structure is described. A starting structure made of regions of a permanent support dielectric under the interconnect lines and surrounding interconnect vias with one or more sacrificial dielectrics present in the remaining portions of the interconnect structure, is capped with a dielectric barrier which is perforated using a stencil with a regular array of holes. The sacrificial dielectrics are then extracted through the holes in the dielectric barrier layer such that the interconnect lines are substantially surrounded by air except for the regions of the support dielectric under the lines. The holes in the cap layer are closed off by depositing a second barrier dielectric so that a closed air gap is formed. Several embodiments of this method and the resulting structures are described.

A circuit fabrication and lithography process utilizes a mask including dense repetitive structures of features that result in a wide array of fine densely populated features on the exposed substrate film. Following this, a trimming procedure is performed to remove any unwanted fine patterned features providing multiple trimmed patterns on the substrate. An optional final step adds additional features as well as the interconnect features thus forming a circuit pattern. In this manner, all fine features may be generated using the exact same density of intensity patterns, and therefore, maximum consistency between features is established without the need for optical proximity correction. The secondary exposures are substantially independent from the initial dense-feature exposure in that the exposure of one set of features and the subsequent exposure of another set of features result in separate independent resist or masking layer reactions, thus minimizing corner rounding, line end shortening and other related spatial frequency effects and unwanted exposure memory effects.

Multiwell droplet actuators, systems and methods are provided. According to one embodiment, a substrate is provided and comprises: (a) one or more input ports for introduction of one or more reagents and / or samples; (b) a regular array of processing wells; and (c) a network of droplet transport pathways comprising pathways that provide direct or indirect droplet transport from each of the input ports to each of the one or more processing wells. Varying droplet actuators and systems related thereto are also provided.

An antennae system for a detector. The antennae system includes a two-dimensional electro-magnetic transmitter array that has an x number of transmitter elements, and a two-dimensional electro-magnetic receiver array that has a y number of receiver elements. The two-dimensional electro-magnetic transmitter and receiver arrays have a spatial relationship such that at least one subset of the two-dimensional electro-magnetic transmitter and receiver arrays forms a regular array of spatial displacements of z pairwise combinations of transmitter and receiver elements, where z is greater than the sum of x and y.

In a maskless particle multibeam processing apparatus, a particle beam is projected through a pattern definition system producing a regular array of beamlets according to a desired pattern, which is projected onto a target which moves at continuous speed along a scanning direction with respect to the pattern definition system. During a sequence of uniformly timed exposure steps the beam image is moved along with the target along the scanning direction, and between exposure steps the location of the beam image is changed with respect to the target. During each exposure step the target covers a distance greater than the mutual distance of neighboring image elements on the target. The location of the beam image at consecutive exposure steps corresponds to a sequence of interlacing placement grids, and after each exposure step the beam image is shifted to a position associated with a different placement grid, with a change of location generally including a component across the scanning direction, thus cycling through the set of placement grids.

A structured light source comprising VCSEL arrays is configured in many different ways to project a structured illumination pattern into a region for 3 dimensional imaging and gesture recognition applications. One aspect of the invention describes methods to construct densely and ultra-densely packed VCSEL arrays with to produce high resolution structured illumination pattern. VCSEL arrays configured in many different regular and non-regular arrays together with techniques for producing addressable structured light source are extremely suited for generating structured illumination patterns in a programmed manner to combine steady state and time-dependent detection and imaging for better accuracy. Structured illumination patterns can be generated in customized shapes by incorporating differently shaped current confining apertures in VCSEL devices. Surface mounting capability of densely and ultra-densely packed VCSEL arrays are compatible for constructing compact on-board 3-D imaging and gesture recognition systems.

Method for forming a novel power grid structure for integrated circuit semiconductor chip devices that exhibits increased electromigration resistance by including diffusion blocking interlevel contacts and employing a regular array of conducting line elements with "phase shift" between adjacent tracks of segmented power busses. The novel grid structure includes a first metal layer including a first set of conducting line segments that are substantially parallel to one another and run in a first direction; a layer of diffusion blocking dielectric insulation above the first layer; a second metal layer including a second set of conducting line segments substantially parallel to each other and running in a second direction orthogonal to the first direction; and, interlevel contact studs disposed substantially vertically through the diffusion blocking dielectric insulation layer for electrically connecting aligned line segments of the first and second sets, wherein each segment of the first and second sets of line segments is limited to a predetermined length by a diffusion blocking boundary.

A microfluidic device having durable ultraphobic fluid contact surfaces in the fluid flow channels of the device. The ultraphobic surface generally includes a substrate portion with a multiplicity of projecting regularly shaped microscale or nanoscale asperities disposed in a regular array so that the surface has a predetermined contact line density equal to or greater than a critical contact line density, and so that the ratio of the cross-sectional dimension of the asperities to the spacing dimension of the asperities is less than or equal to 0.1.

The invention contemplates a strainer based upon a four-way, two-position rotary cylindrical plug valve having a hollow plug. The normal entry port for the sealing plug of the plug valve is a circular radial hole passing from the exterior of the plug into the interior cavity of the plug. The normal exit port for the sealing plug is a regular array of small holes across from and coaxial with the normal entry hole. The ports for the valve body are in two pairs positioned at 90° from each other, with the axes of the ports lying in the same transverse plane as the ports of the valve plug.

We disclose an x-ray interferometric imaging system in which the x-ray source comprises a target having a plurality of structured coherent sub-sources of x-rays embedded in a thermally conducting substrate. The system additionally comprises a beam-splitting grating G1 that establishes a Talbot interference pattern, which may be a π phase-shifting grating, and an x-ray detector to convert two-dimensional x-ray intensities into electronic signals. The system may also comprise a second analyzer grating G2 that may be placed in front of the detector to form additional interference fringes, and a means to translate the second grating G2 relative to the detector.In some embodiments, the structures are microstructures with lateral dimensions measured on the order of microns, and with a thickness on the order of one half of the electron penetration depth within the substrate. In some embodiments, the structures are formed within a regular array.

The information recording medium accosting to the preferred embodiment of the present invention achieves high-speed, high-density recording. The layer, in which ultra-particles made from an optical absorption metal, dielectric, or recording material are formed into regular arrays, is deposited. Resonant Plasmon excitation and resonance absorption of ultra-particles enable the edges of the recorded marks to be identified clearly and intense absorption to occur only in the given layer depending on the wavelength in the case of the multi-layer medium, achieving high-density, large-capacity recording.

A method of determining and correcting for distortions introduced by an imaging tool. The method includes providing an imaging tool having a field of view (FOV), and creating a target pattern containing a regular array of symmetric sub-patterns having locations spanning the FOV. Using the imaging tool, the method then includes measuring relative position of the sub-pattern images at one or more target orientations, determining tool-induced sub-pattern position deviations from designed locations of the sub-patterns, and applying corrections to compensate for an orientation independent component of the sub-pattern position deviations. The target pattern may be mounted on a stage of the measurement tool, created on a mask used in the lithographic process, or created on a wafer being measured by the measuring tool.

Methods are provided for fabricating FinFET integrated circuits on bulk semiconductor substrates. In accordance with one embodiment a patterned hard mask that defines locations of a regular array of a plurality of fins is formed overlying a semiconductor substrate. Portions of the patterned hard mask are removed using a cut mask to form a modified hard mask. The substrate is etched using the modified hard mask as an etch mask to form a plurality of fins extending upwardly from the substrate and separated by trenches. Selected ones of the plurality of fins are at least partially removed to form isolation regions and an insulating material is deposited to fill the trenches and to cover the at least partially removed selected ones of the plurality of fins.

A three dimensional object creation system that prints objects layer by layer, the system printing at least part of each of multiple layers simultaneously, wherein each layer is defined by a plurality of voxels arranged in a regular array and wherein the voxels of each layer are printed so as to be offset by half a voxel relative to the voxels of adjacent layers in a first direction, a second direction perpendicular to the first direction or both the first and second directions.

In a maskless particle multibeam processing apparatus, a particle beam is projected through a pattern definition system producing a regular array of beamlets according to a desired pattern, which is projected onto a target which moves at continuous speed along a scanning direction with respect to the pattern definition system. During a sequence of uniformly timed exposure steps the beam image is moved along with the target along the scanning direction, and between exposure steps the location of the beam image is changed with respect to the target. During each exposure step the target covers a distance greater than the mutual distance of neighboring image elements on the target. The location of the beam image at consecutive exposure steps corresponds to a sequence of interlacing placement grids, and after each exposure step the beam image is shifted to a position associated with a different placement grid, with a change of location generally including a component across the scanning direction, thus cycling through the set of placement grids.

A field programmable processor includes a regular array of processing elements, each of which is adapted to perform a fixed arithmetic function on packets of data. The processing elements are interconnected by an array of signal conductors extending adjacent the processing elements. Switching means are provided for selectively connecting the processing elements to the adjacent signal conductors so as to interconnect the processing elements. Program data representing desired processing element interconnections is stored, the switches are controlled in accordance with the stored program data to achieve the desired processing element interconnections. The packets of data are transmitted between the interconnected processing elements.

The invention discloses a preparation method of a three-dimensional layered structure Fe-doped Ni-MOF nano-array (Fe0.1-Ni-MOF / NF) which is grown in situ on foamed nickel and has high regular array. Nickel foam is used as a conductive substrate. The NiFe-LDH nano-array (NiFe-LDH / NF) firstly grows by a hydrothermal method, and then terephthalic acid is used as an organic ligand to convert a NiFe-LDH / NF precursor template to Fe0.1-Ni-MOF / NF by a solvothermal method, and the product is used as an electrocatalyst for water oxidation reaction. The electrocatalyst shows excellent catalytic activity(eta 100mA cm-2=263mV) in 1M KOH electrolyte, which is much better than undoped Ni-MOF / NF material (eta 100mA cm-2=298mV). The invention fully utilizes the doping introduction impurity level to regulate the electronic configuration and induce the synergy effect between metals, and the highly regularly arranged layered structure nano-array reduces the series resistance, exposes more active sites and promotes the diffusion of electrolytes and evolved gases. A novel energy-transduction material with high electrocatalytic activity, good cycle stability, durability and low cost is constructed.

A supporting structure is provided that concurrently supports a plurality of containers for substances for medical, pharmaceutical or cosmetic applications. The supporting structure includes a planar supporting base having a plurality of openings, which are disposed in a regular array configuration, and an associated holding device that supports the plurality of containers in a positive-fit manner at the supporting base. The holding device protrudes from a bottom side of the supporting base and is configured to support the plurality of containers in the positive-lit manner at their upper rim. Additionally, receptacles are provided on an upper side of the supporting base opposite to the bottom side for accommodating containers at the upper side of the supporting base.

An integrated circuit is packaged using a package substrate that has a bottom side with a regular array of connection points and a top side with the integrated circuit on it. Vias in the package substrate provide electrical connection between the top and bottom sides. The vias have a via capture pad to which a wire may be wire bonded so that the wires from the IC to the substrate top side directly contact the vias at their capture pads without the need for traces from a top side bond pad to a via. The via capture pad is shaped to include at least one sharp edge to improve the ability of a wirebonder with pattern recognition software to locate the capture pad and place the wire.

The object of the invention is to provide an exhaust gas purifying catalyst having a high oxygen storage capacity without changing the usage amount of the oxygen storage component. According to the present invention, the exhaust gas purifying catalyst containing (a) a ceria-zirconia composite oxide containing ceria in a higher amount than zirconia, (b) a ceria-zirconia composite oxide containing zirconia in a higher amount than ceria, and (c) a ceria-zirconia composite oxide having a pyrochlore-type regular array structure is provided. The exhaust gas purifying catalyst of the present invention has a higher oxygen storage capacity than conventional catalysts and is effective in reducing the amount of NOx emission.

An x-ray interferometric imaging system in which the x-ray source comprises a target having a plurality of structured coherent sub-sources of x-rays embedded in a thermally conducting substrate. The structures may be microstructures with lateral dimensions measured on the order of microns, and in some embodiments, the structures are arranged in a regular array.The system additionally comprises a beam-splitting grating G1 that establishes a Talbot interference pattern, which may be a π or π / 2 phase-shifting grating, an x-ray detector to convert two-dimensional x-ray intensities into electronic signals, and in some embodiments, also comprises an additional analyzer grating G2 that may be placed in front of the detector to form additional interference fringes. Systems may also include a means to translate and / or rotate the relative positions of the x-ray source and the object under investigation relative to the beam splitting grating and / or the analyzer grating for tomography applications.

The invention relates to a security tag made unique by randomly distributing a mixture of large numbers of multicolored small objects, such as two colored glass balls, into a regular geometric array or pattern onto a substrate and encapsulating those objects. The objects in the regular array on the substrate will create a unique, non-reproducible pattern. The data, saved to a secure database, can be processed and calculated quantities can be derived from the field of binary data, which can be affixed to the document or manufactured part that the stamp is affixed to. The regular array can be read out by scanner, quantities calculated, and compared to the values printed on the part or document. Additionally, the regular array can be read out by optical scanner and parts or all of the data compared to the data stored in the secure database.

A chemical mechanical planarization process employs a microreplicated surface comprising a regular array of precisely shaped three-dimensional structures such as pyramids, cones, or cube-corners. In a preferred embodiment, asperities of the microreplicated surface employed in an advancing linear belt are allowed to ablate during processing, effectively resulting in a two-phase grinding / polishing operation that increases the material removal rate and increases workplace throughput.

An avalanche photodiode (APD) electro-magnetic radiation (EMR) detector is described. The detector includes an EMR absorption region, a voltage biasing element, and a charge multiplication region. The EMR absorption region includes a substantially regular array of nano-particles embedded in a matrix material. The voltage biasing element is configured to apply a bias voltage to the matrix material such that electrical current is directly generated in the EMR absorption region based on a cooperative plasmon effect in the detector material when electro-magnetic radiation in a predetermined wavelength range is incident upon the detector material, where the dominant mechanism for decay in the cooperative plasmon effect is non-radiative. The charge multiplication region is arranged relative to the EMR absorption region to avalanche multiply the electrical current generated in the EMR absorption region.

A method and apparatus that produces highly ordered, nanosized particle arrays on various substrates. These regular arrays may be used as masks to deposit and grow other nanoscale materials.

In a mask pattern for a device such as a DRAM including a nearly regular array of isolated features, assist features are positioned so as to make the array more symmetric. Where the isolated features are positioned at most but not all of the points of a regular unit cell, the assist features may be positioned at the points of the unit cell not occupied by the isolated features. The isolated features may represent contact holes.