831 results about "Particle beam" patented technology

The invention discloses a particle accelerator multi-particle dynamics efficient simulation method, system and device and a medium. The method comprises the steps that a small number of macro particles are sampled from an initial macro particle beam to form a new macro particle beam; performing multi-particle beam flow dynamics simulation on the new macro particle beams by adopting a PIC algorithm, and projecting the new macro particle beams to four two-dimensional phase spaces in a distributed manner to generate low-resolution phase diagrams of the four two-dimensional phase spaces; obtaining beam physical parameters based on the new macro particle beam; and inputting the low-resolution phase diagram and the beam physical parameters into a beam halo super-resolution network, and outputting a high-resolution phase diagram of each phase space to realize multi-particle beam flow dynamics simulation. Therefore, by combining a traditional numerical calculation method and an artificial intelligence technology, the problem that an existing artificial intelligence algorithm is weak in generalization ability in the field of beam dynamics simulation is solved, rapid and high-precision simulation of the large-scale multi-particle beam flow dynamics process is achieved, and the method is applied to the field of particle accelerator beam dynamics simulation.

The embodiment of the invention provides a particle source assembly and particle beam equipment, relates to the technical field of charged particle beam processing and detection equipment, and is used for improving the degree of freedom of beam state adjustment of charged particle beams. The particle source assembly comprises a particle source, an adjustable diaphragm and a collimating lens device which are arranged along a first direction. Wherein the particle source is used for generating a charged particle beam which is emitted towards the adjustable diaphragm along a first direction; the adjustable diaphragm is positioned in a transmission path of the charged particle beam, and the size of a diaphragm hole is adjustable, so that the beam size of the charged particle beam is adjusted; the collimating lens device is used for collimating the charged particle beam emitted from the adjustable diaphragm, and the position of the collimating main plane in the first direction is adjustable. The particle source assembly can be applied to particle beam equipment.

The invention relates to a separation method suitable for At-211 produced by a linear accelerator, which comprises the following steps: performing gradient pressing on bismuth powder and a pore forming agent, and sintering on a porous silicon carbide substrate to form a gradient pore bismuth-silicon carbide composite target material; bombarding the gradient pore bismuth-silicon carbide composite target material through a high-energy particle beam generated by a linear accelerator, and carrying out nuclear reaction on bismuth atoms in the target material to generate At-211; the bombarded target material is pretreated through argon plasma; distilling the pretreated target material under pulse carrier gas to realize volatilization separation of At-211, wherein the carrier gas comprises inert gas, reducing gas and organic acid steam; the distilled gas is subjected to gradient condensation through the micro-channel condenser; and adding an extracting agent into the micro-channel condenser, and dissolving the At-211 in the extracting agent to obtain an At-211 solution. The high-flux separation method of At-211 suitable for linear accelerator production, provided by the invention, is stable, efficient and rapid.

A method for operating a multi-particle beam system is disclosed, in which an incipient ring collapse process at the front facet of the cathode tip of the beam generation device of the multi-particle beam system can be detected based on beam current measurements and / or beam current uniformity measurements. This detection triggers a targeted material build-up process at the front facet of the cathode tip. Specific process steps for the material build-up process are described. Furthermore, various methods for beam current measurement and / or beam current uniformity measurement are described. These measurements can be performed, in particular, during the normal operation of the multi-particle beam system.

One aspect concerns a method for influencing the charge state of a lithographic mask. This method involves selecting a region of the mask based on the material distribution within that region. The method further includes directing a particle beam onto that region of the mask to influence its charge state.

A method for selecting a repair parameter set for particle beam-based repair of a defect in an object for lithography, in particular a lithography mask, comprises obtaining measured contour data of the object in a neighborhood of the defect, determining at least one repair parameter set for repairing the defect, obtaining at least one simulated aerial image of the object at least partially based on the contour data and the at least one repair parameter set, and selecting at least one first repair parameter set from the at least one repair parameter set for carrying out the repair at least partially based on the simulated aerial image and at least one predetermined target value.

The present disclosure relates to a system and a non-transitory computer-readable medium for estimating the height of foreign matter, etc. adhering to a sample. In order to achieve the abovementioned purpose, proposed is a system, etc. in which data acquired by a charged particle beam device or features extracted from the data are input to a learning model, which is provided with, in an intermediate layer thereof, a parameter learned using teacher data having data acquired by the charged particle beam device or features extracted from the data as inputs and having the heights or depths of the structures of samples or of foreign matter on the samples as outputs, and height or depth information is output.

Systems and methods taught herein utilize a single detector to provide both unidimensional data (e.g., for direct topographical imaging) and multidimensional data (e.g., for crystallographic data) for a sample that is interrogated with a charged particle beam. In some examples, unidimensional data can include signal intensity due to backscattered electrons received across the entire detector surface while multidimensional data can include signal intensity due to backscattered electrons as a function of pixel position. By obtaining unidimensional data and multidimensional data from a single detector, the unidimensional data and multidimensional data can be obtained at a same location, at a same time, or both at the same location and same time.

A particle beam illuminating system includes a beam steering control subsystem configured to receive charged particles and to generate and scan a particle beam over at least a portion of a target located a distance of at least 10 meters from the beam steering control subsystem. The system further includes a beam charge control subsystem configured to receive the particle beam from the beam steering control subsystem and to control an output charge of the particle beam impinging the target.

A method for the passive adjustment of a pole shoe for a magnetic lens of a particle beam system is disclosed, comprising the following steps: providing a reference pole shoe with a predefined minimum magnetic homogeneity in a measuring device; releasably arranging the pole shoe to be adjusted relative to the reference pole shoe in a predefined reference position and thereby assembling a magnetic lens in the measuring device; exciting the magnetic lens in the measuring device; measuring characteristics of the magnetic field generated by the magnetic lens; determining a deviation of the characteristics of the generated magnetic field from corresponding characteristics of a predefined reference magnetic field; and mechanically changing the pole shoe based on the determined deviation to adjust the magnetic field that can be generated by the magnetic lens.

Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The charged-particle beam apparatus may include a charged-particle source configured to generate primary charged particles, the primary charged particles forming a primary charged-particle beam along a primary optical axis, and a charged-particle detector comprising a plurality of con-centric segments of a charged-particle sensitive material configured to detect charged particles emitting from a sample after interaction of the primary charged-particle beam with the sample, wherein each segment of the plurality of concentric segments is configured to collect the emitted charged particles having a range of energy levels and a dominant energy level.

The present application belongs to the technical field of high-end medical equipment. Disclosed are a multi-room particle therapy room, a radiotherapy system, and a particle accelerator movement method. The multi-room particle therapy room comprises a plurality of treatment rooms. The radiotherapy system comprises the multi-room particle therapy room and a particle accelerator. Each treatment room is provided with a beam window. The particle accelerator can move outside different treatment rooms and is aligned with the beam windows. The particle accelerator directs particle beams into the treatment rooms by means of the beam windows. The particle beams perform radiotherapy by means of therapy heads in the treatment rooms. The radiotherapy system is not provided with a dipole magnet or a quadrupole magnet. The plurality of treatment rooms share one particle accelerator. The particle accelerator is moved to the outside of the treatment room requiring the particle beam, and the particle beam is directed into the treatment room by means of the beam window. When the treatment in the treatment room is completed, the particle accelerator is moved to other treatment rooms requiring the particle beams and performs treatment work, thereby reducing the overall cost of the radiotherapy system and making proton therapy accessible.

A dual-radionuclide production target includes a first radionuclide target that produces a first radionuclide when irradiated by a particle beam from a radionuclide production system, and a second radionuclide target that produces a second radionuclide when irradiated by the particle beam that has passed through, and been degraded by, the first radionuclide target. With this design, the first radionuclide target serves two purposes: it reduces the beam energy to a suitable energy for isotope production on the second radionuclide target, and in-doing so becomes activated with a medically relevant radionuclide that can be easily extracted. In this way, in a single production run can produce two or more radionuclides.

A multi-particle beam system and a method for operating it in a decontamination mode are disclosed, in which charged interfering particles located in a sensitive area of ​​a multi-aperture arrangement are captured and removed from the sensitive area. Electrostatic capture electrodes are arranged and controlled in a specific manner, and / or a trench trapping system is used to capture the charged interfering particles. The charged interfering particles are stored during the normal operating mode of the multi-particle beam system in such a way that they do not interfere with normal operation.

The invention relates to a method for operating a particle beam device for imaging, processing and / or analyzing an object, and to a computer program product and to a particle beam device for carrying out the method. The method comprises the steps of: providing control data for a relative positioning of a particle beam of the particle beam apparatus with respect to the object, the control data comprising information on a magnification value and on a velocity value; transforming the provided control data into actuation data for actuating the movable object vehicle or actuating the deflection device to deflect the particle beam, the actuation data comprising information about magnification values and about actuation speed values; a relative movement of the object and the field of view of the particle beam device relative to each other is performed using the actuation data.

In one embodiment, a multiple charged-particle beam irradiation apparatus includes a correction map generation unit calculating, for each pixel, a beam modulation rate for the pixel and a beam modulation rate for at least one of pixels surrounding the pixel, based on an amount of displacement of a beam emitted toward the pixel and a position of a pattern placed within the pixel and generating a correction map in which modulation rates are defined, and an irradiation dose correction unit calculating, for each pixel, a corrected irradiation dose by adding a value obtained by multiplying the beam modulation rate for the pixel defined in the correction map by the beam irradiation dose for the pixel and a value obtained by multiplying the beam modulation rate for the at least one pixel by a beam irradiation dose for a pixel serving as an associated destination of the at least one pixel.

A system and method for increasing a gas flow across a substrate in a charged particle beam apparatus are disclosed. The apparatus may include a vacuum chamber comprising: a first gas inlet fluidly connected to a charged particle beam optical element array and configured to guide a first gas flow downstream toward a substrate within the charged particle beam optical element array at a first flow rate; and a second gas inlet configured to guide a second gas flow toward the substrate at a second flow rate. The first and second gas flows are merged to form a transverse gas flow across the top surface of the substrate, the transverse gas flow having a flow rate higher than either the first or second flow rate.

A method for operating a multi-beam particle microscope which operates using a plurality of individual charged particle beams, wherein the method includes the following steps: measuring the beam current; determining a deviation of the measured beam current from a nominal beam current; decomposing the determined deviation into a drift component and into a high-frequency component; and controlling the high-frequency component of the beam current via a first closed-loop beam current control mechanism and / or compensating an effect of the high-frequency component on a recording quality of the multi-beam particle microscope using different mechanism than a closed-loop beam current control mechanism. An electrostatic control lens arranged in the beam generating system between extractor and anode can be used as first closed-loop beam current control mechanism. Adapting an extractor voltage of the beam generating system can be avoided.

The invention provides a magnetic resonance guided charged particle beam radiotherapy device and an electromagnetic navigation parameter debugging method for target coordinates, and belongs to the technical field of radiotherapy devices. The system comprises a charged particle beam electromagnetic navigation device which comprises multiple stages of electromagnetic navigation coils, charged particle beams sequentially pass through the multiple stages of electromagnetic navigation coils, and parallel charged particle beams consistent with a magnetic resonance main magnetic field in direction are generated; the MR imaging device comprises an MR main magnetic field coil upper group and an MR main magnetic field coil lower group, and an imaging treatment area is formed between the MR main magnetic field coil upper group and the MR main magnetic field coil lower group. The electromagnetic navigation parameter debugging method comprises the steps of constructing a target cost function, optimizing electromagnetic navigation parameters based on an optimization algorithm without gradient information, and determining and outputting optimal navigation parameters. According to the invention, the charged particle beam parallel to the MR main magnetic field can be generated, the influence of Lorentz force on the charged particle beam is greatly reduced, the difficulty of positioning a tumor target region by the charged particle beam under the guidance of MR can be reduced, and the treatment accuracy is improved.

A method of measuring a delay time of a propagation of a signal in a line in a circuit structure, the method comprises irradiating the line by pulses of a charged particle beam, wherein a pulse repetition frequency of the pulses of the charged particle beam is varied. The method further comprises measuring, for each of the pulse repetition frequencies, a secondary charged particle emission responsive to the irradiating the line by the pulses of the charged particle beam at the respective pulse repetition frequency, and deriving the delay time of the line based on the secondary charged particle emission responsive to the varying of the pulse repetition frequency.

Samples and methods for determining beam spot size include scanning a pattern on a sample with a charged particle beam to generate an image. The pattern can include at least one sloped side edge and a top surface. The at least one sloped side edge can have a slope angle controlled during fabrication of the sample to be between about 40 to 80 degrees. The beam spot size can be determined based on an imaged profile of the at least one sloped side edge, the imaged profile being derived based on the image.

A radiation dose quantification method and system, the method comprising: detecting, with one or more detectors with respective sensitive volumes, gamma-rays emitted as a result of capture of neutrons by a composition in a subject subjected to an irradiation program, the composition comprising one or more thermal neutron capture agents, the neutrons having been generated by non-elastic collisions between a primary beam of particles and nuclei in the subject, wherein the particles consist of any one or more of protons, deuterons, tritons and heavy ions, the irradiation program comprises at least one period of irradiation with a beam duration that includes beam-on periods and beam-off periods; applying at least one predefined energy window or filter configured to accept only detection events in the one or more detectors resulting from gamma-rays with an energy indicative of selected gamma-rays arising from the capture of thermal neutrons by the one or more thermal neutron capture agents, wherein the thermal neutrons are neutrons with energies below approximately 0.4 eV; applying a timing window configured to reject or ignore detection events in the one or more detectors resulting from at least prompt gamma-rays produced in non-neutron capture events; and determining the radiation dose of neutron radiation received by the subject during the irradiation program from at least the accepted detection events or determining a dose map of the radiation received by the subject from at least the accepted detection events.

The invention relates to the technical field of high-current particle beam diagnosis, in particular to a high-energy ion beam three-dimensional reconstruction method and system based on secondary electron emission signals. According to the technical scheme, the method comprises the steps of data preprocessing and conversion, geometric space up-sampling, point assignment generation and model boundary division and output. According to the method, the spatial sparsity of original data is overcome through geometric upsampling, the fidelity of physical attribute reconstruction is remarkably improved by utilizing a topological structure based on a minimum spanning tree and a primary function frequency superposition model, automatic and accurate division of beam boundaries is realized according to a physical threshold value, an end-to-end automatic processing flow is formed, and the method has the advantages that the method is simple and convenient to operate and high in practicability. And outputting a visual three-dimensional model supporting interactive analysis, systematically solving the problems of data sparsity, interpolation distortion and boundary fuzziness in the prior art, and realizing high-precision and high-efficiency reconstruction and visual analysis of the three-dimensional form of the high-energy ion beam.

The invention discloses an electric field deflector, a preparation method thereof and an electric field deflection control system, relates to the field of semiconductors, and is used for realizing high-precision control of electron beams. The electric field deflector comprises a substrate, a dielectric layer arranged on one side of the substrate, a first signal interconnection lead connected with the ground electrode, a second signal interconnection lead connected with the signal electrode, a first deflection electrode and a second deflection electrode, wherein the first signal interconnection lead and the second signal interconnection lead are located in the dielectric layer and are connected with the ground electrode, and the first deflection electrode and the second deflection electrode are oppositely arranged. The first deflection electrode is electrically connected with the first signal interconnection lead, and the second deflection electrode is electrically connected with the second signal interconnection lead; the first shielding layer is connected with the first deflection electrode; the particle beam channel penetrates through the area between the first deflection electrode and the second deflection electrode, the part, located between the first signal interconnection lead and the second signal interconnection lead, of the dielectric layer, the first shielding layer and the substrate in the second direction; the second direction is vertical to the substrate; the electric field deflector is used for electric field deflection control of the charged particle beam.

In low-energy electron diffraction (LEED), electron diffraction patterns are detected, and images can be formed based on electrons reflected and diffracted from a sample surface. Diffraction patterns can be generated by the interaction of relatively localized coherent electron beams incident on the sample surface (e.g., a selected region of the sample surface). Information from the diffraction patterns can be used to determine (or reconstruct) the structure on the sample surface. Advantageously, selected-area LEED (SA-LEED) or a combination of LEED and stacked imaging (to generate a series of diffraction patterns, each associated with a given particle beam position, wherein particle beams centered at adjacent positions partially overlap) can be used to determine the surface structure of semiconductor wafers via lensless imaging for defect inspection and / or other purposes.

Provided is a focused charged particle beam device including: a support portion that supports a processed substrate; and a focused energy beam columnar body that includes a differential exhaust device and is capable of relative movement in correspondence with an arbitrary region of a processed surface of the processed substrate, wherein the support portion supports only a peripheral portion of the processed substrate in a state in which the processed substrate is horizontally disposed, a positive pressure chamber is disposed below the processed substrate supported by the support portion, the positive pressure chamber applies positive pressure throughout the entirety of a processed region of the processed substrate, prevents deflection of the processed substrate due to gravity, includes a local negative pressure mechanism within the positive pressure chamber, the local negative pressure mechanism applies negative pressure while maintaining a state in which the local negative pressure mechanism does not contact a lower surface of the processed substrate, counteracts suction force of the differential exhaust device, maintains a state in which the local negative pressure mechanism opposes the differential exhaust device across the processed substrate, and is capable of relative movement with respect to the processed substrate in following the differential exhaust device.

The invention discloses a particle beam leading-out device, a stripping film adjusting method and a cyclotron, and relates to the field of cyclotrons, the particle beam leading-out device comprises a driving motor, a magnetic fluid sealing device, a flange and a right-angle transmission mechanism which are connected in sequence; the driving motor is fixed at the front end of the flange through a motor mounting bracket; the input end of the magnetic fluid sealing device is connected with an output shaft of the driving motor, and the output end of the magnetic fluid sealing device penetrates through the flange and the support to be connected to the right-angle transmission mechanism. The right-angle transmission mechanism is connected to the driving motor and the two film stripping structures, so that the two film stripping structures can be subjected to angle adjustment or position switching, and the right-angle transmission mechanism is composed of the base, the first main shaft and the second main shaft and realizes movement direction switching through a structural mode of a hinge and a connecting rod; vibration and noise generated by gear meshing can be effectively avoided, abrasion loss is greatly reduced through the structure, and therefore the maintenance frequency of equipment is greatly reduced.

Systems, devices, and techniques for heating a sample are described. A heating assembly can include a membrane. The membrane can include carbon nanotube material. The heating assembly includes a support, mechanically coupled with the membrane. The support can be configured to integrate with a charged particle beam system. The heating assembly also includes a heating circuit, electrically coupled with the membrane. The heating circuit can be configured to direct an electrical current through the membrane.

A multi-aperture array for manipulating a plurality of charged first single-particle beams, comprising: a base body with a plurality of apertures, wherein, during operation of the multi-aperture array, one of the charged first single-particle beams passes through each aperture; at least a plurality of first electrodes, wherein one of the first electrodes is arranged at each of the apertures to individually influence the first single-particle beam passing through the aperture, and wherein each of the first electrodes is connected to a control unit; wherein the base body has a first depth TG in a z-direction along which the first apertures extend through the base body; wherein the first electrodes each have a depth TE in the z-direction that is less than the depth TG, i.e., TE < TG;wherein the first electrodes are each embedded in the base body such that they are exposed in an area adjacent to and forming the aperture, and are otherwise embedded directly in the base body and thus without an electrical insulating layer; and wherein the material of the base body is glass or consists of glass.

The invention relates to a semiconductor assembly and a manufacturing method and a detection method thereof. The manufacturing method comprises the following steps: providing at least one substrate; and performing a forming step for performing a forming process by using at least one or a combination selected from a group consisting of a laser processing process, a microwave processing process, a radio frequency processing process, an electrical discharge processing process, a wet chemical processing process, a machining process, a plasma source processing process, a particle beam processing process and a newly added processing process, a microstructure is formed on a substrate, wherein the microstructure is selected from a group consisting of a hole-shaped structure, a circuit structure and an optical structure. According to the manufacturing method, the machining efficiency and precision can be effectively improved, and the process elasticity, the production efficiency and the structural reliability can be improved by integrating diversified machining processes and combining an innovative base material pre-machining and side wall repairing scheme.