127 results about "Acceleration voltage" patented technology

The invention discloses a method for measuring the particle size of metal powder by using a scanning electron microscope, which comprises the following steps: step 1, sample treatment: adhering a small conductive adhesive tape on a sample table, sprinkling metal powder on the adhered conductive adhesive tape, and purging to obtain the conductive adhesive tape adhered with the metal powder; step 2, parameter setting: setting acceleration voltage, working distance, diaphragm, image contrast, brightness, magnification times and scanning speed of a scanning electron microscope to observe the conductive adhesive tape adhered with the metal powder obtained in the step 1 to obtain an electronic image of metal powder particles; and processing and calculating the electronic image of the metal powder particles by using software to obtain the average particle size of the metal powder particles. According to the method disclosed by the invention, a solvent is not needed to disperse the sample, pollution of the solvent to the sample is effectively avoided, and the result is more accurate than that of directly measuring the particle size by using length software.

The invention provides a material characterization image analysis system and an analysis method thereof. The invention discloses a material characterization image analysis system and an analysis method thereof, and the method comprises the following steps: S1, obtaining a back scattering electron image, a secondary electron image and energy spectrum data of a material through a scanning electron microscope, and dynamically adjusting the acceleration voltage, beam current and detector gain of the scanning electron microscope through a parameter optimization algorithm based on a preset material type and an observation target; s2, carrying out multi-scale feature enhancement preprocessing on the back scattering electron image and the secondary electron image, wherein the preprocessing comprises noise suppression, non-uniform illumination correction and micro-area texture enhancement; s3, pixel-level space registration is carried out on the back scattering electron image and the energy spectrum element distribution diagram, and a multi-modal fusion feature matrix is constructed. The material characterization image analysis system and the analysis method thereof provided by the invention have the advantages that the distortion problem can be well solved, the micro-structure identification accuracy can be improved, and the life prediction error can be reduced.

The invention discloses a hydrophobic micro-nano flexible thin film structure and a characterization method, relates to the technical field of thin film structure characterization, and aims to solve the problems of poor supporting performance of a flexible thin film and inaccurate standard data acquisition. Different acceleration voltages and currents are set for the coarse thinning stage and the fine thinning stage, fine removal of materials can be achieved, the accuracy of the thinning thickness is guaranteed, the thickness, the surface fluctuation amplitude and the microstructure feature size of a thin film in a measured image are measured with the help of a scale tool, and the measurement accuracy is improved. The morphological characteristics of the hydrophobic micro-nano flexible film can be converted into accurate data, rigid support is provided for the film by utilizing high hardness, high chemical stability and good thermal conductivity of tungsten, the upper side and the lower side of a target area are milled, hole digging is conducted on surrounding materials to form a preliminary sheet contour, then U-shaped milling and back-splashing material cleaning are conducted, and the thin film is obtained. The sample form is effectively controlled, and damage of processing stress to the sample structure is reduced.

An acceleration voltage measurement circuit outputs an acceleration voltage signal Vacc as a measurement signal in which an acceleration radiofrequency voltage excited in the accelerating cavity is measured. A low power radiofrequency control system inputs, to the accelerating cavity, as radiofrequency power, control radiofrequency power at a constant frequency included in the range of the resonance frequency of the accelerating cavity. When the phase difference between the acceleration voltage signal Vacc and the control radiofrequency power becomes within the predetermined value, the low power radiofrequency control system inputs, to the accelerating cavity, as radiofrequency power by feedback control, the acceleration radiofrequency power synchronized with the acceleration frequency that is the frequency of the acceleration voltage signal Vacc, and thereafter, when the acceleration frequency reaches an output frequency Fext, stops the input of the acceleration radiofrequency power to the accelerating cavity.

The invention provides an electronic probe quantitative analysis method for trace fluorine elements in an iron-containing sample. According to the quantitative analysis method, during quantitative analysis, the TAPL light splitting crystal is used, the TAPL light splitting crystal has a larger diffraction area, and the obtained count is higher; the interference of the light splitting crystal Fe of the LDE1L is difficult to process; therefore, the TAPL light splitting crystal is used for replacing the LDE1L light splitting crystal and the TAP light splitting crystal; the quantitative analysis conditions are as follows: the acceleration voltage is 15 kV, the beam current is 300 nA, and the beam spot is 20 microns; a TAPL light splitting crystal is adopted, the F content detection limit is 76 ppm (3 sigma), and a TAP light splitting crystal is adopted, the F content detection limit is 195 ppm (3 sigma); when the TAPL spectroscopic crystal is used for testing the trace fluorine element in the iron-containing sample, the detection limit is lower, the detection value is closer to the reference value, and the accuracy is higher.

The application provides a one-time forming electron beam welding method for a titanium alloy component with single-sided incidence and double-layer welds, which comprises the following steps: a closed cavity structure titanium alloy component is formed by a plurality of mutually shielded multi-layer thin plates through single-direction electron beam incidence; the focusing current of the electron beam is adjusted; the converging effect of the electromagnetic coil is changed to change the focus position, and then the electron beam keyhole depth and size are changed; the keyhole is adjusted to be an energy channel through which the electron beam passes; the electron beam energy can pass through the first layer of welds to reach the second layer of welds; the controllable linear energy is provided by combining the acceleration voltage, the welding current and the welding speed to ensure that the remaining energy that penetrates reaches the second layer of welds to complete the welding of the second layer of welds again; the low-frequency scanning is combined with the electron beam movement to drive the first layer of molten pool metal to flow and fill the rear channel, and the front channel is opened, so that the channel is dynamically smooth and stable, and the electron beam keyhole effect behavior is adjusted.

To provide a positive electrode active material in which a gas generation in accordance with a charging and discharging progression, and the generation of a cracking in particles is suppressed.SOLUTION: A positive electrode active material contains a lithium composite oxide containing at least nickel and cobalt. The cobalt from the lithium composite oxide has a concentration gradient that is reduced toward a center part from a front surface part of the lithium composite oxide, a concentration gradient of the cobalt has an inclination of at least different type. A coding of the inclination of the different type is the same. When a mean value of the inclination of the concentration gradient of the cobalt is s1 in the lithium composite oxide in a region of which an acceleration voltage is 1kV to 10kV, and a mean value of the inclination of the concentration gradient of the cobalt is s2 in the lithium composite oxide in the region of which the acceleration voltage is 10kV to 30kV, the s1 and the s2 satisfy the following equation of 1.7≤s1-s2≤3.0.SELECTED DRAWING: None

The invention relates to a device and a method for detecting the vacuum degree of a vacuum switch arc extinguish chamber based on a photomultiplier. The device comprises a plasma excitation module used for exciting a plasma signal in the vacuum switch arc extinguish chamber to be detected; the photomultiplier detection module is used for detecting a plasma signal, acquiring the plasma signal by providing focusing voltage and accelerating voltage, and converting the plasma signal into a current signal; the signal conversion module is used for converting the current signal into a voltage signal; the detection module is used for extracting characteristic parameters from the voltage signals, judging the vacuum degree interval of the arc extinguish chamber of the vacuum switch to be detected, and calculating the vacuum degree of the arc extinguish chamber of the vacuum switch to be detected according to a preset fitting relation curve; and the control module is used for controlling the plasma excitation module to perform excitation and optimizing control on the plasma excitation module according to the calculated vacuum degree result. Compared with the prior art, the method has the advantages of reducing hardware cost and use cost and the like.

The invention relates to the technical field of cuprous oxide particle testing, and discloses a method for characterizing cuprous oxide particles in a fine copper wire, which comprises the following steps: S1, fixing the fine copper wire on a copper sheet by using conductive silver paste, putting the copper sheet into a silica gel square mold, filling a metallographic phase cold inlay, and standing for 30 minutes to obtain a cured sample; s2, putting the cured sample obtained in the step S1 into a cross section cutting sample table of a three-ion-beam cutting instrument, selecting a cross section mode, setting ion gun voltage and ion beam cutting time, and starting a cutting program; and S3, transferring the sample obtained in the step S2 into a scanning electron microscope, selecting an electron channel contrast imaging mode, and setting acceleration voltage, current, working distance and magnification times to obtain a high-resolution scanning electron microscope image of the cross section of the fine copper wire. And key information such as the size, the morphology and the distribution condition of cuprous oxide particles and the interface bonding condition of the cuprous oxide particles and a copper matrix is obtained from the cuprous oxide particles. Therefore, a basis is provided for formulating a reasonable fine copper wire drawing process and a bus continuous casting and rolling process.

The invention discloses a method for preparing a Bi2Te3 thermoelectric material EBSD sample through ion grinding. The specific method comprises the following steps: cutting a Bi2Te3 material by adopting a linear cutting technology to obtain a sample with a proper size, inlaying, grinding and polishing, and ultrasonically cleaning to remove surface impurities; the method comprises the following steps: horizontally placing a sample on an objective table, closing a cabin door, opening a mechanical pump to vacuumize to 0.01 pa, and rotating the angle of the sample table until the included angle between the ion beam jet direction and the normal direction of the surface of the sample is 85-88 degrees; the argon flow is set to be 1.5 mL / min; turning on a main circuit switch, adjusting the acceleration voltage to 2kv, setting the grinding time to be 15-20 minutes, starting an ion gun switch, opening a plate valve after the current is stabilized at 350-400uA, starting grinding, and rotating the sample table. And after grinding is finished, resetting the acceleration voltage to be 4kv, grinding again, taking out the sample, and carrying out EBSD observation.

The invention provides a combined type electronic detector, electronic detection equipment and a detection method, and belongs to the technical field of electronic microscopic imaging. The combined type electronic detector adopts a structure that yttrium aluminum garnet crystals are arranged to partially cover a split type silicon diode detector, so that physical replacement of any detection body is not needed, and the detection efficiency is improved. According to the invention, signals of different areas can be selected and read through an electronic mode, so that an optimal detection mode is called under different working conditions, detection can be realized under the condition of high acceleration voltage, detection can also be realized under the condition of low acceleration voltage, one machine with two purposes is realized, and the performance and the application range of electron beam equipment are greatly improved.

The invention discloses a method for rapidly representing a filling area of an embedded boron nitride nanotube and application. The method comprises the steps that an observation sample is prepared, the observation sample comprises a single dispersed embedded boron nitride nanotube, and the embedded boron nitride nanotube comprises a boron nitride nanotube and an embedded object in a tube cavity; a scanning electron microscope is utilized, 5-7 kV acceleration voltage is adopted for imaging the observation sample to obtain an observation image, and in the observation image, the gray level of the filling area of the embedded object is different from the gray level of the unfilled lumen area. According to the method, the scanning electron microscope is utilized, and specific condition parameters are set to confirm the filler embedded with the boron nitride nanotubes, so that a clear image of the filling object in the lumen is obtained, and information such as the length, the diameter and the position of the filling object can be intuitively expressed; the testing method is short in time, low in price, simple to operate and small in damage to samples.

This invention provides a gas cluster ion beam apparatus capable of planarizing a material substrate by irradiating it with a neutral beam. A neutral gas introduction device (26) is provided for a vacuum container (2). By introducing neutral gas from the neutral gas introduction device (26), the gas cluster ion beam (11) traveling along the beamline in the beam delivery system (BT) collides with the neutral gas, undergoing dissociation and neutralization to form a high-energy neutral beam (25). Furthermore, a reflective electrode (28) is provided between an electrostatic lens (9b) and the material substrate (15), and a high voltage equal to the accelerating voltage is applied to the reflective electrode.

The invention discloses a method for improving corrosion resistance of a pure aluminum surface in a NaCl solution, and relates to the technical field of high-current pulsed ion beams, an experiment is carried out on a TEMP-6 type HIPIB device, and a polymer anode unipolar pulse mode external magnetic insulation ion diode is adopted to generate 70% C and 30% H ion beams for an irradiation experiment; the ion beam parameters are as follows: the acceleration voltage is 300kV, the pulse width is 70-80ns, the beam density is 100A / cm < 2 >, the irradiation frequency is five times, and the background vacuum degree of a vacuum chamber during irradiation is 10 <-3 > Pa.

The present application relates to the technical field of scanning electron microscopy, and discloses a working distance calibration method and system for a scanning electron microscope, the scanning electron microscope and a medium. The method comprises the following steps: placing an elevation sample on a sample stage of a scanning electron microscope to be calibrated, adjusting objective lens excitation, changing the focal length of the objective lens, and obtaining objective lens excitation under different accelerating voltages; under the same working distance, fitting different accelerating voltages and corresponding objective lens excitation by using a first fitting model to determine first, second, third, fourth and fifth calibration parameters of the first fitting model; under the same accelerating voltage, fitting different working distances and corresponding objective lens excitation by using a second fitting model to determine the third, fourth and fifth calibration parameters of the second fitting model; and calibrating the scanning electron microscope to be calibrated by using the five calibration parameters. The present application determines multiple calibration parameters by using two fitting models, thereby improving the accuracy of calibration of key parameters of the scanning electron microscope before delivery.

The optical film (1) is provided with: a first layer (11) that contains inorganic particles and a base resin that contains and holds the inorganic particles; and a second layer (12) that overlaps the first layer (11). In the optical film (1), a STEM image of a cross section in the thickness direction of the first layer (11) at an acceleration voltage of 30 kV is converted into a binarized image of 1 [mu] m equivalent to 1010 pixels, and a rectangular region of 1280 pixels * 768 pixels is extracted from the binarized image. When the average value (A) of the proportions of the ranges occupied by the inorganic particles in each of the partial regions obtained by equally dividing the rectangular region into 80 is calculated, and the standard deviation (sigma) of the proportions of the ranges occupied by the inorganic particles in each of the partial regions is calculated, sigma / A is 19%-34% (inclusive).

The plated steel sheet comprises: a steel sheet; and a plated layer arranged on a surface of the steel sheet, wherein the plated layer comprises, as a chemical composition, Al: 10.0% to 25.0%, Mg: 3.0% to 10.0%, Fe: 0.01% to 2.00%, Si: more than 0.00% and 2.00% or less, and a remainder comprising Zn and impurities, and when the plated layer is subjected to grazing incidence X-ray diffraction measurement under conditions where Cu-Kα ray is used, an acceleration voltage as an X-ray output is 50 kV, and an X-ray incident angle against a surface of the plated layer is 1°, an X-ray diffraction intensity ratio between a (300) plane of a Mg21Zn25 phase and a (002) plane of anη-Zn phase (I (Mg21Zn25) / I (η-Zn)) is more than 0.3.

A gas diffusion electrode according to one embodiment of the present invention has a microporous layer, containing carbonaceous fine particles and a fluorine-based water-repellent resin, on at least one surface of a conductive porous substrate. In the gas diffusion electrode, the ratio (surface layer F / C) of elemental fluorine to elemental carbon detected, at 1,000 times magnification and an acceleration voltage of 2.0 kV by scanning electron microscope energy dispersive X-ray spectroscopy (SEM-EDX), on the surface on the side of the microporous layer with which the conductive porous substrate is not in contact is 0.35 or more and 0.60 or less.

The invention provides double-source ion beam micro-nano polishing equipment capable of accurately controlling temperature. The double-source ion beam micro-nano polishing equipment comprises an ion source, a sample temperature control mechanism and an ion beam current detection mechanism, the number of the ion sources is two, the two ion sources both face the sample table, each ion source comprises a protective shell, a gas introduction channel is arranged in the protective shell, a Penning ion gun, an accelerating electrode and an electrostatic lens are sequentially arranged at the gas introduction channel, and the Penning ion gun, the accelerating electrode and the electrostatic lens are all connected with the power supply module; the ionization voltage Vd of the Penning ion gun, the acceleration voltage Va of the acceleration electrode and the focusing voltage Ve of the electrostatic lens are regulated and controlled through the power supply module, the ion beam detection mechanism is used for monitoring the spatial distribution of ion beams in real time, and the sample temperature control mechanism is connected with the sample table and is used for regulating and controlling the temperature of the sample table. The device is high in processing efficiency, can efficiently control the temperature of a sample area, facilitates real-time detection, and optimizes ion beam energy distribution.

The present invention relates to the field of particle accelerators, and discloses a cyclotron cavity acceleration voltage measurement system and measurement method. The system includes: a radio frequency front-end module, which completes the filtering and attenuation of the AD module input signal and the filtering and amplification of the DA module output signal; an AD module, which completes the digitization of the input signal after the radio frequency front-end processing; a DA module, which completes the simulation of the output signal after the feedback processing; a signal processing module, which completes the control of the AD module and the DA module, amplitude and phase detection, tuning motor control and cavity voltage measurement, and completes data interaction with the display and control unit through Ethernet; a display and control unit. The present invention can measure the cavity voltage online by designing a cyclotron cavity voltage measurement system. Q The value is calculated, the high-frequency cavity parallel shunt impedance is calculated, and the current cavity voltage value is calculated by measuring the power consumption inside the cavity.

The invention relates to a gear steel surface treatment method based on electron beam pre-scanning. The method comprises the steps that a moving heat source model is established; setting at least two electron beams, planning a moving path for each electron beam, and setting scanning process parameters (beam size, acceleration voltage, moving speed and the like); simulating the action of the scanning electron beam and the gear / gear steel matrix under the parameters, and obtaining a simulation result set; the electron beam actually acts on the gear / gear steel surface according to the set parameters based on the simulation result, and an actual result set is obtained; and the gear / gear steel obtained after electron beam scanning pretreatment is subjected to carburizing treatment, a plurality of first treatment results are obtained, meanwhile, gear steel which is not pretreated is subjected to carburizing treatment, a second treatment result is obtained, and the first treatment results and the second treatment result are analyzed and compared. A plurality of electron beams are arranged, the scanning beams of the electron beams are different, other conditions are not changed, and then the target (optimal) beam intensity of the electron beams is obtained.

The invention discloses a metal-based nickel-chromium strain film as well as a preparation method and application thereof, and relates to the technical field of sensor strain films, the metal-based nickel-chromium strain film is prepared by adopting an ion beam sputtering method, and the specific method comprises the following steps: firstly, carrying out pre-sputtering, then carrying out formal sputtering, and depositing a nickel-chromium alloy strain film on an insulating layer film; and during pre-sputtering and formal sputtering, the voltage ranges from 500 V to 800 V, the acceleration voltage ranges from 180 V to 220 V, the current ranges from 160 mA to 200 mA, and the pre-sputtering time ranges from 90 min to 120 min. The strain film prepared by the preparation method of the nickel-chromium alloy strain film has the advantages of good resistivity batch consistency and strong interface bonding force, and the prepared nickel-chromium alloy film can be ensured to be small in roughness and good in film quality while the bonding force is ensured, so that the nickel-chromium alloy strain film has relatively good long-term stability.

The present application provides a charged particle beam device and a control method thereof, and a composite charged particle beam device, which can obtain a distortion-free, size-accurate, and scanned image of a sample surface equivalent to that before switching or changing, in the case of switching an acceleration mode and a deceleration mode of an objective lens or changing an applied voltage of an enhancer electrode constituting the objective lens. The charged particle beam device includes: a charged particle source that generates charged particles; a plurality of scanning electrodes that generate an electric field for deflecting the charged particles, the charged particles being emitted by applying an acceleration voltage to the charged particle source and an extraction voltage to an extraction electrode that extracts the charged particles; an electrostatic lens that is disposed between the plurality of scanning electrodes and a sample stage, and converges the charged particle beam deflected by the scanning electrodes; and a processing unit that acquires measurement conditions, and sets scanning voltages applied to the plurality of scanning electrodes based on the acquired measurement conditions, respectively.

The present application relates to the technical field of cyclotron voltage control, and specifically to a method and device for controlling the accelerating voltage of a medical cyclotron. The method comprises: dividing the alternating voltage signal into three stages according to the sudden change of the alternating voltage signal within a conversion cycle; analyzing the periodic fluctuations of the high-level stage and the low-level stage, the rate of change of the transition edge stage, and the degree of disorder of the change, to obtain the control intervention degree of the conversion cycle; obtaining an adjustment coefficient according to the stage to which the voltage amplitude at the same moment in the alternating voltage signal at the current moment in the previous conversion cycle belongs; and obtaining a control proportional coefficient at the current moment by combining the change in magnetic field intensity at the current moment, the adjustment coefficient, and the control intervention degree of the previous conversion cycle at the current moment, and performing feedback control on the alternating voltage signal. The present application can improve the control accuracy of the accelerating voltage of a medical cyclotron.

The magnetic tape includes a non-magnetic support, and a magnetic layer containing a ferromagnetic powder. In a binarized image of a secondary electron image obtained by imaging a surface of the magnetic layer with a scanning electron microscope at an acceleration voltage of 5 kV, the number of bright regions having an equivalent circle diameter of 75 nm or more and less than 125 nm is 100 or more and 4000 or less, and standard deviation σ of the number of the bright regions in a width direction of the surface of the magnetic layer is 400 or less.

The invention relates to the technical field of high-voltage power supply performance testing, in particular to a method for verifying performance indexes of a high-voltage power supply in situ in a transmission electron microscope. The method comprises the following steps: based on an electron wavelength model and a resolution model, determining the influence on electron wavelength and resolution when ripples and noise exist in acceleration voltage output by a high-voltage power supply; based on the quality of an imaging image of the transmission electron microscope when the acceleration voltage contains different ripples, determining the influence of the ripples on the image resolution; and determining the influence of the voltage stability on the image stability based on the contrastive analysis of the quality of the imaged images when the standard high-voltage power supply and the to-be-tested high-voltage power supply are respectively adopted in the preset time. According to the invention, the theoretical analysis of the power supply performance is realized by establishing the electron wavelength model and the resolution model; through the analysis of the resolution and stability of the imaging of the transmission electron microscope, the power supply performance is tested in the actual working environment of the transmission electron microscope, so that the in-situ verification of the high-voltage power supply performance is realized.

The ion source for the micro-nano polishing machine comprises a protective shell, a gas leading-in channel is arranged in the protective shell, a penning ion gun, an accelerating electrode and an electrostatic lens are sequentially arranged at the position of the gas leading-in channel, and the penning ion gun, the accelerating electrode and the electrostatic lens are all connected with a power module. The power supply module comprises an ionization voltage Vd applied to the penning ion gun, an acceleration voltage Va applied to the acceleration electrode and a focusing voltage Ve applied to the electrostatic lens, and the ionization voltage Vd, the acceleration voltage Va and the focusing voltage Ve are all provided by a voltage-adjustable power supply. According to the utility model, the diameter and distribution of the ion beam current can be adjusted, so that the same processing scheme can generate the same processing effect.

The application is a preparation method of fly ash porous hollow microspheres with controllable aperture, which can prepare fly ash porous hollow microspheres with controllable aperture, and the specific process is as follows: the fly ash hollow microsphere FAC raw material is sequentially passed through a 150-mesh screen, and the undersize part is the first particle size range; then it is continuously passed through a 60-mesh screen, and the undersize part is the second particle size range; then it is continuously passed through a 35-mesh screen, and the undersize part is the third particle size range, and the oversize part of the 35-mesh screen is discarded; the density of the fly ash hollow microsphere FAC in different particle size ranges is measured; the fly ash hollow microsphere FAC is processed in a nanoscale aperture by using a focused ion beam method, the ion source is a liquid gallium ion source, and the working distance is 5 mm; firstly, the acceleration voltage of the focused ion beam is determined according to the density of the fly ash hollow microsphere FAC in different particle size ranges; then the scanning speed of the focused ion beam is determined according to the particle size range. The aperture size of the microspheres obtained by the method is controllable and is in a nanoscale, and the requirements of low thermal conductivity and high strength can be met.

To provide a porous film that can be used to obtain an electrochemical element with excellent cycle characteristics.SOLUTION: A porous membrane according to the present disclosure has a surface in which the ratio R5 / R0.3 of the pore area ratio R5 [%] measured from a scanning electron microscope image obtained by imaging at an accelerating voltage of 5 kV to the pore area ratio R0.3 [%] measured from a scanning electron microscope image obtained by imaging at an accelerating voltage of 0.3 kV is 5 or more.SELECTED DRAWING: Figure 3

The invention discloses a topological insulator Bi2Te3 nanopore size regulation and control method based on thickness-diameter ratio feedback, and belongs to the field of two-dimensional material nanometer manufacturing. Comprising the following steps: step 1, placing a sample in a transmission electron microscope, and prefabricating nanopores with the diameter of 1-5nm in a bismuth telluride film with the thickness of 2-10nm by utilizing a converged electron beam; step 2, performing irradiation by using an electron beam with 300kV acceleration voltage, wherein the beam density is controlled to be 1.54 * 10 < 5 > A.m <-2 >; 3, feeding back the regulation and control size based on the ratio of the initial aperture of the nanopore to the thickness of the material, and when the thickness-diameter ratio is smaller than 0.5, realizing aperture shrinkage or expansion by adjusting the beam density; and when the thickness-diameter ratio is greater than 0.5, the electron beam irradiation only enables the aperture to be enlarged, and the aperture cannot be shrunk. The method does not need chemical reagents, is green and environment-friendly, can directionally regulate and control the size of the bismuth telluride nanopore, and is suitable for preparing topological quantum devices, nanofiltration membranes and thermoelectric nanostructures.