38 results about "Acceleration voltage" patented technology

The application provides a one-time forming electron beam welding method for a titanium alloy component with single-sided incidence and double-layer welds, which comprises the following steps: a closed cavity structure titanium alloy component is formed by a plurality of mutually shielded multi-layer thin plates through single-direction electron beam incidence; the focusing current of the electron beam is adjusted; the converging effect of the electromagnetic coil is changed to change the focus position, and then the electron beam keyhole depth and size are changed; the keyhole is adjusted to be an energy channel through which the electron beam passes; the electron beam energy can pass through the first layer of welds to reach the second layer of welds; the controllable linear energy is provided by combining the acceleration voltage, the welding current and the welding speed to ensure that the remaining energy that penetrates reaches the second layer of welds to complete the welding of the second layer of welds again; the low-frequency scanning is combined with the electron beam movement to drive the first layer of molten pool metal to flow and fill the rear channel, and the front channel is opened, so that the channel is dynamically smooth and stable, and the electron beam keyhole effect behavior is adjusted.

The invention provides a combined type electronic detector, electronic detection equipment and a detection method, and belongs to the technical field of electronic microscopic imaging. The combined type electronic detector adopts a structure that yttrium aluminum garnet crystals are arranged to partially cover a split type silicon diode detector, so that physical replacement of any detection body is not needed, and the detection efficiency is improved. According to the invention, signals of different areas can be selected and read through an electronic mode, so that an optimal detection mode is called under different working conditions, detection can be realized under the condition of high acceleration voltage, detection can also be realized under the condition of low acceleration voltage, one machine with two purposes is realized, and the performance and the application range of electron beam equipment are greatly improved.

This invention provides a gas cluster ion beam apparatus capable of planarizing a material substrate by irradiating it with a neutral beam. A neutral gas introduction device (26) is provided for a vacuum container (2). By introducing neutral gas from the neutral gas introduction device (26), the gas cluster ion beam (11) traveling along the beamline in the beam delivery system (BT) collides with the neutral gas, undergoing dissociation and neutralization to form a high-energy neutral beam (25). Furthermore, a reflective electrode (28) is provided between an electrostatic lens (9b) and the material substrate (15), and a high voltage equal to the accelerating voltage is applied to the reflective electrode.

The invention discloses a method for improving corrosion resistance of a pure aluminum surface in a NaCl solution, and relates to the technical field of high-current pulsed ion beams, an experiment is carried out on a TEMP-6 type HIPIB device, and a polymer anode unipolar pulse mode external magnetic insulation ion diode is adopted to generate 70% C and 30% H ion beams for an irradiation experiment; the ion beam parameters are as follows: the acceleration voltage is 300kV, the pulse width is 70-80ns, the beam density is 100A / cm < 2 >, the irradiation frequency is five times, and the background vacuum degree of a vacuum chamber during irradiation is 10 <-3 > Pa.

The present application relates to the technical field of scanning electron microscopy, and discloses a working distance calibration method and system for a scanning electron microscope, the scanning electron microscope and a medium. The method comprises the following steps: placing an elevation sample on a sample stage of a scanning electron microscope to be calibrated, adjusting objective lens excitation, changing the focal length of the objective lens, and obtaining objective lens excitation under different accelerating voltages; under the same working distance, fitting different accelerating voltages and corresponding objective lens excitation by using a first fitting model to determine first, second, third, fourth and fifth calibration parameters of the first fitting model; under the same accelerating voltage, fitting different working distances and corresponding objective lens excitation by using a second fitting model to determine the third, fourth and fifth calibration parameters of the second fitting model; and calibrating the scanning electron microscope to be calibrated by using the five calibration parameters. The present application determines multiple calibration parameters by using two fitting models, thereby improving the accuracy of calibration of key parameters of the scanning electron microscope before delivery.

The optical film (1) is provided with: a first layer (11) that contains inorganic particles and a base resin that contains and holds the inorganic particles; and a second layer (12) that overlaps the first layer (11). In the optical film (1), a STEM image of a cross section in the thickness direction of the first layer (11) at an acceleration voltage of 30 kV is converted into a binarized image of 1 [mu] m equivalent to 1010 pixels, and a rectangular region of 1280 pixels * 768 pixels is extracted from the binarized image. When the average value (A) of the proportions of the ranges occupied by the inorganic particles in each of the partial regions obtained by equally dividing the rectangular region into 80 is calculated, and the standard deviation (sigma) of the proportions of the ranges occupied by the inorganic particles in each of the partial regions is calculated, sigma / A is 19%-34% (inclusive).

The plated steel sheet comprises: a steel sheet; and a plated layer arranged on a surface of the steel sheet, wherein the plated layer comprises, as a chemical composition, Al: 10.0% to 25.0%, Mg: 3.0% to 10.0%, Fe: 0.01% to 2.00%, Si: more than 0.00% and 2.00% or less, and a remainder comprising Zn and impurities, and when the plated layer is subjected to grazing incidence X-ray diffraction measurement under conditions where Cu-Kα ray is used, an acceleration voltage as an X-ray output is 50 kV, and an X-ray incident angle against a surface of the plated layer is 1°, an X-ray diffraction intensity ratio between a (300) plane of a Mg21Zn25 phase and a (002) plane of anη-Zn phase (I (Mg21Zn25) / I (η-Zn)) is more than 0.3.

The invention discloses a metal-based nickel-chromium strain film as well as a preparation method and application thereof, and relates to the technical field of sensor strain films, the metal-based nickel-chromium strain film is prepared by adopting an ion beam sputtering method, and the specific method comprises the following steps: firstly, carrying out pre-sputtering, then carrying out formal sputtering, and depositing a nickel-chromium alloy strain film on an insulating layer film; and during pre-sputtering and formal sputtering, the voltage ranges from 500 V to 800 V, the acceleration voltage ranges from 180 V to 220 V, the current ranges from 160 mA to 200 mA, and the pre-sputtering time ranges from 90 min to 120 min. The strain film prepared by the preparation method of the nickel-chromium alloy strain film has the advantages of good resistivity batch consistency and strong interface bonding force, and the prepared nickel-chromium alloy film can be ensured to be small in roughness and good in film quality while the bonding force is ensured, so that the nickel-chromium alloy strain film has relatively good long-term stability.

The present application provides a charged particle beam device and a control method thereof, and a composite charged particle beam device, which can obtain a distortion-free, size-accurate, and scanned image of a sample surface equivalent to that before switching or changing, in the case of switching an acceleration mode and a deceleration mode of an objective lens or changing an applied voltage of an enhancer electrode constituting the objective lens. The charged particle beam device includes: a charged particle source that generates charged particles; a plurality of scanning electrodes that generate an electric field for deflecting the charged particles, the charged particles being emitted by applying an acceleration voltage to the charged particle source and an extraction voltage to an extraction electrode that extracts the charged particles; an electrostatic lens that is disposed between the plurality of scanning electrodes and a sample stage, and converges the charged particle beam deflected by the scanning electrodes; and a processing unit that acquires measurement conditions, and sets scanning voltages applied to the plurality of scanning electrodes based on the acquired measurement conditions, respectively.

Beam generating device for a multi-particle beam system, in particular for a multi-beam particle microscope operating with a multiplicity of charged single-particle beams, wherein the beam generating device comprises: a particle emitter with a cathode tip for emitting charged particles, in particular by means of thermal field emission, which form a charged particle beam; an extractor electrode spaced apart from the cathode tip and which extracts the charged particles from the cathode tip by means of an extraction voltage applied between the cathode tip and the extractor electrode during operation;and an anode electrode which is further spaced from the cathode tip than the extractor electrode and which further accelerates the extracted charged particles by means of an accelerating voltage applied between the cathode tip and the anode electrode during operation, wherein the extractor electrode has a shape comprising or consisting of a spherical cap.

The invention discloses a method and a system for deducting a hydrogen background of a helium mass spectrometer leak detector, and belongs to the technical field of helium mass spectrometer leak detectors. The positive and negative bias voltages are applied to the original acceleration voltage, so that the maximum value and the minimum value of the hydrogen ion signal are obtained, and the background value of the hydrogen ion signal at the peak value of the helium ion signal when the bias voltage is not applied can be estimated through the maximum value and the minimum value of the hydrogen ion signal. And the total ion signal is deducted from the total ion signal when the bias voltage is not applied, so that the detection result of the helium ion signal is more accurate.

Systems, devices, methods, algorithms, and techniques are described for energy loss spectra at relatively large energy losses. A method includes modifying an acceleration voltage of a system source from a first energy to a second energy. The method may include modifying one or more optical elements of the system according to the calibration of the second energy. The method may include generating a set of operating conditions for the projection optics system. The method may include modifying one or more elements of the projection optics system to at least partially comply with the set of operating conditions. The method may include modifying a condenser lens of the system in accordance with focusing a charged particle beam onto a sample location. The method may also include modifying the acceleration voltage from the second energy to the first energy.

A method for producing a neutrons includes triggering a raising or a lowering of a temperature of a pyroelectric crystal of less than about 40° C. to produce a voltage of negative polarity of at least −100 keV on a surface of a deuterated or tritiated target coupled thereto. A deuterium ion source is pulsed to produce a deuterium ion beam. The accelerating of the deuterium ion beam is achieved by accelerating voltage of the pyroelectric crystal toward the deuterated or tritiated target to produce neutrons. Furthermore, the pyroelectric crystal, the deuterated or tritiated target, and the deuterium ion source are coupled to a common support. The method also includes throwing the common support housing the pyroelectric crystal, the deuterated or tritiated target, and the deuterium ion source near an unknown threat for identification thereof.

The invention belongs to the technical field of analytical chemistry and physical instruments, and discloses a mass spectrometry system and a mass spectrometry method.The system comprises an ion optical subsystem used for applying target acceleration voltage to ion pulses generated after ionization of a target analysis sample injected through an ion inlet; the rotating subsystem is used for providing a target angular velocity corresponding to a mass spectrometry mode for the ion pulse with the target radial velocity, so that the accelerated ion pulse freely flies in the rotating subsystem, and the accelerated ion pulse is impacted to the position sensitive detector after generating a deflection angle under the action of a Coriolis force in the free flight process; the position sensitive detector is used for acquiring the impact deflection angle position of each ion in the ion pulse and the ion strength corresponding to the impact deflection angle position; and the control subsystem is used for constructing a mass spectrum of the target analysis sample. According to the scheme, wide-range and high-resolution analysis can be flexibly balanced.

The invention relates in particular to a method for influencing the state of charge of a sample, comprising: directing a charged particle beam onto the sample in order to analyze and / or process the sample, particles of the particle beam being accelerated onto the sample by a first acceleration voltage and causing charging of the sample; and directing the charged particle beam onto the sample in order to influence the charging of the sample, in which particles of the particle beam are accelerated onto the sample by a second, altered acceleration voltage that is at least 15% of the first acceleration voltage.

The invention provides a shale oil in-situ determination method and device, and the method comprises the steps: obtaining a first plate-shaped sample and a second plate-shaped sample from an oil-containing shale sample, carrying out polishing treatment on the second plate-shaped sample, testing the first plate-shaped sample by adopting a nuclear magnetic resonance relaxation spectrum technology, and determining the shale oil in-situ. Acquiring the content of the retained oil of the first plate-shaped sample in an original state, placing the polished second plate-shaped sample in a field emission scanning electron microscope under a preset target acceleration voltage, and observing and recording the occurrence state of the retained oil in pores of the second plate-shaped sample, and analyzing the content of the shale retention oil and the occurrence state of the shale retention oil in different pores based on the content and the occurrence state of the shale retention oil.

The invention relates to an electron back scattering diffraction parameter optimization method and device, equipment, a medium and a product. The method comprises the steps that a plurality of band contrast ratios are obtained, the band contrast ratios are obtained by conducting multiple response surface experiments on the basis of experiment parameters corresponding to an electron back scattering diffraction experiment by experiment equipment, and the parameter types of the experiment parameters comprise beam current, detector distance, exposure time, acceleration voltage and acquisition step length; constructing a diffraction pattern quality prediction model based on the plurality of band contrasts, wherein the diffraction pattern quality prediction model is used for representing the relationship between the plurality of experimental parameters and the band contrasts; and performing global optimization processing on the diffraction pattern quality prediction model by using a preset parameter optimization model to obtain a target parameter which is used for performing an electron back scattering diffraction experiment. By adopting the method, the parameter optimization efficiency and the EBSD characterization quality can be improved.

The invention belongs to the technical field of semiconductor atom manufacturing and performance testing, and particularly relates to a method for preparing a self-repairing monocrystalline silicon nanowire and testing the mechanical / electrical performance recovery rate of the self-repairing monocrystalline silicon nanowire. Comprising the following steps: processing and bombarding a monocrystalline silicon material along a [111] crystal orientation by adopting an ion beam to form a micron sheet; connecting two ends of the micron sheet with a force / electricity performance test chip; carrying out thinning and width trimming on the micron sheet to form a nanowire; the surface of the nanowire is etched by using an electron beam spot, the diameter of the electron beam spot is 1-6nm, the acceleration voltage is 200-300kV, and the dosage rate is 1 * 10 < 6 >-1 * 10 < 8 > e / 2s. Controllable preparation of the self-repairing monocrystalline silicon nanowire is provided, the self-repairing efficiency exceeding 70% is achieved, the force / electricity performance of the monocrystalline silicon nanowire before and after fracture is represented through the transmission electron microscope force / electricity testing technology, and quantitative testing of the self-repairing efficiency of the monocrystalline silicon nanowire is achieved.

The present invention relates, inter alia, to a method for influencing a charge state of a sample, comprising directing a charged particle beam onto the sample for the purpose of analyzing and / or processing the sample, wherein the particles of the particle beam are accelerated onto the sample by a first acceleration voltage and result in charging of the sample, and directing the charged particle beam onto the sample for the purpose of influencing the charging of the sample, wherein the particles of the particle beam are accelerated onto the sample by a second, changed acceleration voltage amounting to at least 15% of the first acceleration voltage.

This invention discloses a low-accelerating-voltage radio frequency (RF) cavity, belonging to the field of particle accelerator technology. The RF cavity includes a standing-wave resonant cavity, with its core improvement lying in the periodic arc-shaped corrugated structure on the surface of the inner conductor, and the inner conductor surface being coated with a 5-10 nm thick TiN thin film. This invention disrupts the resonance conditions for secondary electron multiplication through the periodic corrugated structure, while simultaneously utilizing the TiN thin film to reduce the secondary electron yield on the inner conductor surface. The synergistic effect of these two methods achieves highly efficient suppression of the secondary electron multiplication effect with minimal impact on the cavity's RF performance. This low-accelerating-voltage RF cavity has a simple structure and reliable operation, effectively improving the stability and reliability of cavity operation. It is particularly suitable for the focusing cavity of petal accelerators, significantly improving beam quality and reducing beam loss.

Beam generating device for a multiple particle beam system, in particular for a multi-beam particle microscope, operating with a multiplicity of charged individual particle beams, wherein the beam generating device has the following: a particle emitter having a cathode tip for emitting charged particles, in particular by means of thermal field emission, which form a charged particle beam; an extractor electrode, which is spaced apart from the cathode tip and which extracts the charged particles from the cathode tip by means of an extraction voltage present between the cathode tip and the extractor electrode during operation; and an anode electrode, which is spaced apart from the cathode tip further than the extractor electrode and which further accelerates the extracted charged particles by means of an acceleration voltage present between the cathode tip and the anode electrode during operation, wherein the extractor electrode has a shape which comprises a spherical cap or consists of a spherical cap. Further electrodes comprising a spherical cap or consisting of a spherical cap can be provided.

Method for producing a gallium nitride substrate (100), the method comprising: Formation of a bond oxide film (120) on a first gallium nitride (110); Performing a first ion implantation for a surface of the first gallium nitride (110) on which the bonding oxide film (120) is formed, at least once, to form a damaged layer (113), thereby canceling any deflection of the first gallium nitride (110); Performing a second ion implantation for the surface of the first gallium nitride (110) on which the bonding oxide film (120) is formed, in order to form a blister layer (114); Connecting the bonding oxide film (120) of the first gallium nitride (110) to a temporary substrate (130); Separation of the first gallium nitride (110) using the vesicle layer (114) to form a nucleation layer (115); and Enabling the growth of a second gallium nitride (140) using the nucleation layer (115) to form gallium nitride in bulk, wherein, during the formation of the damaged layer (113), the thickness of the damaged layer (113) is controlled according to an accelerating voltage of the first ion implantation, wherein the second ion implantation is performed at an accelerating voltage that is lower than that of the first ion implantation, wherein the blister layer (114) is formed at a position which is closer to the surface of the first gallium nitride (110) on which the bonding oxide film (120) is formed, compared to a position of the damaged layer (113), wherein during the second ion implantation the bubble layer (114) is formed at a depth of 0.1 µm to 4 µm from the surface of the first gallium nitride (110), wherein a heat treatment at 400 °C to 800 °C is carried out for the bubble layer (114), wherein the first gallium nitride (110) comprises an N-surface (111) and a Ga-surface (112), wherein during the second ion implantation the blister layer (114) is formed on the Ga-surface (112) of the first gallium nitride (110), wherein the second gallium nitride (140) is allowed to grow using the Ga surface (112) of the first gallium nitride (110) as a nucleation layer (115).

An X-ray generating apparatus includes an X-ray generating tube including an electron gun, and including a target configured to generate X-rays upon receiving an electron beam emitted from the electron gun; a deflector that deflects the electron beam; a drive circuit that applies an acceleration voltage between a cathode of the electron gun and the target; and an adjustment section for adjusting the deflection of the electron beam by the deflector in accordance with the acceleration voltage or a change amount of the acceleration voltage, to reduce a change in an incident position of the electron beam on the target due to a change in the acceleration voltage.

The invention relates to the technical field of high-voltage power supply control of a petroleum logging instrument, in particular to a fuzzy PID (Proportion Integration Differentiation) stable control method and a fuzzy PID stable control system for neutron tube acceleration voltage, and aims to solve the technical problems of voltage drop and difficulty in quick recovery caused by internal resistance soft characteristics and high-temperature parameter time-varying characteristics of an existing voltage doubling circuit. The method comprises the following steps: acquiring a current real-time running state of a system; calculating a feed-forward compensation duty ratio required for counteracting the natural voltage drop under the current working condition; the dynamic proportional gain is calculated in real time, and feedback control output is obtained by combining the integral term; and generating a PWM duty ratio which is finally output to the inverter full bridge so as to control the acceleration voltage of the neutron tube. Through a feed-forward compensation mechanism, the output characteristic of the high-voltage power supply is improved physically and essentially, so that the output characteristic is close to the characteristic of an ideal voltage source.

The present application provides a kind of electrostatic deflection convergent energy analyzer, it has wide receiving angle and high two-dimensional convergent performance, can carry out imaging to two-dimensional real space image or emission angle distribution, and can carry out two-dimensional convergent and imaging under 90 ° deflection relative to the direction of incidence. One or more outer electrodes and multiple inner electrodes are arranged along the shape of two rotors formed on the inner side and outer side of common rotation axis. Among them, the inner surface shape of outer electrode is tapered, the diameter of which decreases towards both ends, and the outer surface shape of inner electrode is tapered, the diameter of which decreases towards both ends. Electron entrance hole and exit hole are formed on the outer electrode at both ends of the rotation axis respectively. Voltage for electron acceleration and deceleration is applied to outer electrode and inner electrode in proportion to the energy of incident electron. Voltage is applied to one or more electrodes except the inner electrode at both ends, which is twice or more than the converted acceleration voltage obtained by converting the energy of electron into acceleration voltage based on the potential of outer electrode where entrance hole is formed.

Improvement of the light emission characteristics of fluoride phosphors, specifically improvement of the external quantum efficiency. 【Solution means】 Fluoride phosphor particles having a composition represented by the general formula (1): A2M (1-n) F6:Mn 4+ n In the general formula (1), element A is one or more alkali metal elements containing K, element M is Si alone, Ge alone, or a combination of one or more elements selected from the group consisting of Si and Ge, Sn, Ti, Zr, and Hf, and 0 < n ≤ 0.1. For these fluoride phosphor particles, using an electron probe microanalyzer manufactured by JEOL Ltd., product number: JXA-8230 and the attached software, with an acceleration voltage of 15 kV, an irradiation current of 5 × 10 -8 A, the value Pc of the Mn level near the center of the fluoride phosphor particles, determined from cross-sectional elemental analysis under the conditions of a measurement time of 30 ms, a measurement area size of 160 × 160 μm, and 400 × 400 pixels of the number of measurement points, is 36 to 58.

Embodiments of systems, apparatuses, and methods relate to an ion beam source system. The ion source is configured to provide a negative ion beam to a tandem accelerator system downstream of the ion source, and a modulator system connected to an extraction electrode of the ion source is configured to bias the extraction electrode for a duration sufficient to maintain stability of an acceleration voltage of the tandem accelerator system.

This invention belongs to the field of material defect characterization and provides a method for evaluating the degree of irradiation damage to materials, comprising the following steps: (1) providing an irradiated sample; (2) using EBSD to obtain the grain orientation information of the irradiated sample, and selecting target grains according to the grain orientation, adjusting the electron gun accelerating voltage value and the position of the irradiated sample to perform ECCI characterization on the target grains; (3) comparing whether the total surface density ρ1 of the defects in the irradiated sample in the S / TEM characterization results and the total surface density ρ2 of the defects in the irradiated sample in the ECCI characterization results satisfy |ρ 1‑ ρ2|≤1×10 17 pcs / m 2 If not, proceed to step (4); (4) adjust the electron gun accelerating voltage to perform ECCI characterization on the target grain; (5) repeat steps (3)-(4) until ρ1 and ρ2 satisfy |ρ 1‑ ρ2|≤1×10 17 pcs / m 2 Therefore, this method can conveniently assess the degree of irradiation damage to bulk materials and rapidly screen materials irradiated with ions.

This invention provides methods, computer programs, and devices for acting on the charge state of a sample. [Solution] The present invention relates in particular to a method for acting on the charge state of a sample, comprising delivering a charged particle beam onto a sample for the purpose of analyzing and / or processing the sample, wherein particles of a particle beam are accelerated onto the sample by a first accelerating voltage, thereby charging the sample; and delivering a charged particle beam onto a sample for the purpose of acting on the charge of the sample, wherein particles of a particle beam are accelerated onto the sample by a second, modified accelerating voltage which is at least 15% of the first accelerating voltage.

This invention provides a method for energy loss spectroscopy in relatively large energy loss scenarios. [Solution] The method includes modifying the acceleration voltage of the system's source from a first energy to a second energy. The method may also include modifying one or more optical elements of the system according to the calibration of the second energy. The method may also include generating a set of operating conditions for the projection optical system. The method may also include modifying one or more elements of the projection optical system at least in accordance with the set of operating conditions. The method may also include modifying the condenser lens of the system in accordance with focusing the beam of charged particles to the sample position. The method may also include modifying the acceleration voltage from a second energy to a first energy.