The invention discloses an annealing
temperature control method based on a differentiated
ohmic contact material, and aims to solve the problems that the annealing temperature of an N-surface Au / Ge
ohmic contact layer of an existing AlGaInP-based
red light Micro-LED is not accurately monitored, a temperature field is not uniform and is difficult to detect, and abnormal response lags, the method comprises seven steps of processes (two times of patterning, two times of
metal coating, two times of
photoresist removal, annealing and observation), and the annealing temperature of the N-surface Au / Ge
ohmic contact layer of the existing AlGaInP-based
red light Micro-LED is controlled. Preparing a first Au / Ge ohmic
contact layer (for function) and a second Au / Ge / Ni ohmic
contact layer (for detection) on the N surface of the
wafer; by means of the characteristic that Ni inhibits Au / Ge agglomeration, the two-layer agglomeration state difference is observed through an
optical microscope, and the temperature is judged (in the
normal state, the former agglomerates, and the latter does not
agglomerate); the method is convenient in detection, supports batch detection, can find temperature abnormity in real time, improves the process stability, and is suitable for industrial
mass production.