1569 results about "Photodetection" patented technology

The invention discloses an intelligent photoelectric theodolite aerial target positioning and tracking system, which relates to the technical field of photoelectric detection, and comprises a multi-mode photoelectric sensor module integrating visible light, infrared thermal imaging, a laser radar and a polarized light sensor and supporting spectrum adaptive switching; the dynamic noise suppression processing module is used for eliminating environmental interference based on a time-space domain hybrid filtering algorithm; the multi-target tracking control module adopts a time-sharing partition scanning strategy and a graph neural network data association algorithm; the anti-interference servo driving module is used for realizing stable tracking under strong disturbance through inertial navigation-visual fusion compensation; and the edge computing platform is used for deploying a lightweight deep learning model to complete target recognition and trajectory prediction. According to the invention, through interdisciplinary collaboration of quantum dot materials, graph neural networks and physical equation constraints, the bottleneck of a single technology is broken through; and through closed-loop optimization of dynamic anti-interference and edge intelligence, full-link enhancement of'perception-decision-execution 'is realized.

The invention discloses a bionic moving target sensing, storage and calculation integrated photoelectric detection system based on continuous photoconduction, and relates to the field of bionic intelligent vision and the field of brain-like calculation, and the system comprises a synaptic bionic photoelectric detector array and a brain-like memristor array which are interconnected. When the synaptic-like bionic photoelectric detector array detects visual information of a moving target, a fixed bias voltage is applied to a device in each pixel, space illumination information corresponding to each pixel is converted into a continuously attenuated photocurrent signal, illumination information of a multi-frame dynamic target is continuously received in the continuous attenuation process of the photocurrent, and the visual information of the moving target is detected by the synaptic-like bionic photoelectric detector array. After the last frame of illumination information is input, a light current signal of each pixel is read, and a feature map memorizing all historical moment information is determined; the brain-like memristor array is based on the Ohm's law and the Kirchhoff's law, performs deep neural network operation on the feature map, outputs a current corresponding to a task result label, identifies a dynamic target, and can meet the requirements of a deep neural network and a complex dynamic visual task.

The invention relates to the technical field of target detection, in particular to a composite radar photoelectric detection system, which comprises a radar detection module, a photoelectric detection module, a data processing module, a control module and a dynamic resource scheduling module, and is characterized in that the radar detection module and the photoelectric detection module realize physical layer fusion through a common-aperture integrated design; the data processing module realizes data layer depth fusion based on a multi-modal algorithm; the dynamic resource scheduling module is integrated with an environment sensing unit and is used for acquiring environment data in real time and transmitting the environment data to the control module; the control module is internally provided with a priority decision tree and is used for dynamically distributing the main / auxiliary sensors according to environmental conditions. Therefore, the problems of low integration level, insufficient data fusion precision, poor environment adaptive ability, heat dissipation bottleneck and the like of aperture division design in the prior art are solved.

The invention relates to a partial discharge detection system based on Rydberg atoms in the field of partial discharge detection of electrical equipment, the system comprises an optical path frequency stabilization module, an atom probe, a photoelectric detection module, a controller module and a power frequency synchronous trigger signal circuit, the optical path frequency stabilization module locks 852.35 nm probe light and pump light frequency less than 509.53 nm through SAS and EIT technologies, and the atomic probe is used for detecting the frequency of the probe light. Inducing transition from a cesium atom ground state to a first excited state to a Rydberg state; under the effect of partial discharge pulse, the atomic probe outputs a modulated EIT transmission spectrum signal, after photoelectric conversion and filtering, the controller module analyzes the amplitude and phase information of the pulse in combination with a power frequency synchronizing signal, the upper computer generates a PRPD diagram to analyze the discharge correlation, the detection sensitivity of the system reaches-50dBm, the frequency band of 300MHz-2GHz is covered, the dynamic range is greater than or equal to 50dB, the equivalent height is greater than or equal to 20mm, and the discharge correlation is greater than or equal to 20mm. Broadband and high-resolution detection is achieved, the problem of phase synchronization is solved, and the device is suitable for high-voltage environment on-line monitoring.

The invention relates to the technical field of crystal material preparation, in particular to a ternary layered selenide Ge3Sb4Se7 semiconductor material and a preparation method thereof. The preparation method of the ternary layered selenide Ge3Sb4Se7 semiconductor material comprises the following steps that S001, germanium powder, antimony powder and selenium powder with the molar ratio being 3: 4: 7 serve as raw materials, the temperature is increased to 900-950 DEG C under the vacuum condition, and heat preservation is conducted for 12-24 h at the temperature; s002, after heat preservation is finished, the temperature is reduced to 475-500 DEG C at the cooling rate of 1-5 DEG C / min, and heat preservation is conducted for 3-5 days at the temperature; and after heat preservation is finished, furnace cooling or quenching cooling is performed to reach the room temperature, and the layered ternary selenide single-phase material with the chemical formula being Ge3Sb4Se7 is obtained. The ternary layered selenide Ge3Sb4Se7 semiconductor material prepared by the invention is a single-phase material and has the characteristics of low thermal conductivity and low resistivity, so that the ternary layered selenide Ge3Sb4Se7 semiconductor material has application potential in the fields of thermoelectric devices, photoelectric detection and the like.

The embodiment of the invention provides an optical detection device which comprises an imaging assembly and a photoelectric detection device, and the imaging assembly is used for forming an image on an image plane of a to-be-detected area of a wafer. And the photoelectric detection device is used for receiving images and is arranged at the image plane. The photoelectric detection device comprises a light beam separation assembly and a sensor assembly, the light beam separation assembly is used for dividing a continuous first light signal in an image into multiple beams of second light signals, and the light beam separation assembly comprises a microlens array. The sensor assembly is used for receiving multiple beams of second optical signals, and each pixel unit of each sensor in the sensor assembly is used for receiving one beam of second optical signal in the multiple beams of second optical signals. The sensor assembly comprises a single-pixel sensor, and the single-pixel sensor corresponds to one micro lens in the micro lens array; and / or, the sensor assembly comprises a multi-pixel sensor, the multi-pixel sensor corresponds to a plurality of microlenses in the microlens array, and spatial segmentation is beneficial to improving the signal-to-noise ratio.

Various structures for a hybrid pixel array are disclosed. The hybrid pixel array includes a combination of square photodiode (PD) pixel structures and split PD pixel structures. Square PD pixel structures include one photodiode per pixel unit while split PD pixel structures include two photodiodes per pixel unit. In certain instances, square PD pixel structures are used for green light pixels and split PD pixel structures are used for blue and red light pixels in the hybrid pixel array. The combination of square PD pixel structures and split PD pixel structures provides autofocus capability with higher signal strengths. Various techniques for row addressing and readout from the hybrid pixel array are also disclosed.

The invention relates to the technical field of data processing, and discloses a drainage liquid monitoring method and device based on a drainage liquid real-time monitoring device. The light signal to be analyzed comprises a near-infrared light signal emitted to drainage liquid in the drainage tube by a light source emitting module in the drainage liquid real-time monitoring device and a receiving signal detected by a photoelectric detection module in the drainage liquid real-time monitoring device after passing through the drainage liquid; based on the to-be-analyzed optical signal, determining target substances in the drainage liquid as well as substance amount concentrations and substance amounts corresponding to the target substances one by one; judging whether the drainage liquid is abnormal or not based on the substance amount concentration and the substance amount; under the condition that the drainage liquid is abnormal, an alarm signal is generated, and complication prediction is carried out. The system can assist medical staff in discovering potential complications as soon as possible and preventing disease deterioration, and does not need to depend on regular observation and professional judgment of the medical staff, so that the workload of the medical staff is effectively relieved, and the working efficiency is improved.

The invention discloses a microstructure silicon carbide ultraviolet photoelectric detector with high quantum efficiency and a preparation method thereof, and belongs to the technical field of ultraviolet photoelectric detection. The detector adopts a bottom-to-top structural design and comprises a silicon carbide highly-doped n + type substrate, an n type buffer layer, a low-doped n-type absorption layer, a low-doped p-type absorption layer (containing a microstructure), an annular highly-doped p + type ohmic contact layer and a passivation isolation layer. Reverse bias voltage is applied to the p + type ohmic contact electrode to form a depletion electric field, and the microstructure promotes the p-i-n structure electric fields to be mutually connected and coupled, so that the photon-generated carrier depletion efficiency is improved, and the responsivity of the device and the external quantum efficiency are enhanced. And meanwhile, the microstructure enables a short-wave ultraviolet signal to directly penetrate through the p-type absorption layer to enter the internal absorption layer, so that photon-generated carrier recombination caused by surface defects of the p + type ohmic contact layer is avoided, the collection efficiency of photon-generated carriers is improved, and ultraviolet full-band detection is realized.

The invention discloses a multi-core optical fiber multichannel demodulation system for three-dimensional displacement measurement of a mechanical oscillator, which comprises a light source module, a multi-core optical fiber sensing probe, a photoelectric detection module and a signal processing module. A mapping model between multi-channel optical signals and displacement is established, decoupling and high-precision measurement of three-dimensional displacement are realized through a matrix demodulation algorithm, the system takes a multi-core optical fiber as an integrated probe structure, free space optical path alignment is not needed, an optical path is stable, and packaging is simple and convenient; compared with a traditional single-core optical fiber displacement sensing scheme, displacement components of the mechanical oscillator in the three orthogonal directions can be obtained at the same time, and the method has the advantages of being high in measurement precision, high in anti-interference capacity, good in real-time performance, compact in system structure and the like and can be widely applied to the fields of mechanical oscillator displacement measurement, structure health monitoring, precision manufacturing, micro-nano operation positioning and the like.

The invention discloses an evanescent coupling type germanium-silicon photoelectric detector based on a sub-wavelength grating, and belongs to the technical field of photoelectric detection. The germanium-silicon photoelectric detector comprises a silicon slab waveguide layer, a ridge waveguide layer, a germanium absorption region, an upper cladding and an electrode, the ridge waveguide layer comprises a first ridge waveguide area, a second ridge waveguide area, a third ridge waveguide area and a fourth ridge waveguide area, and the fourth ridge waveguide area is used for receiving optical signals and transmitting the optical signals to the third ridge waveguide area and the germanium absorption area; the waveguide of the third ridge waveguide region adopts a sub-wavelength grating with a gradually-changed size to regulate and control the coupling characteristic of light, so that the light can be gradually received by the first germanium absorption region and the second germanium absorption region on the two sides in the propagation process, and absorption light fields can be uniformly distributed in the germanium absorption regions. Signal distortion caused by the fact that the front end of germanium enters a saturation state under high-power incidence can be effectively avoided. The invention further provides a preparation method of the germanium-silicon photoelectric detector, the preparation method is compatible with the COMS technology, and the process complexity and the production cost are reduced.

The invention relates to the technical field of photoelectric detection and computer vision, and particularly discloses an infrared-based ground-to-air unmanned aerial vehicle detection and tracking method, which comprises the following steps: acquiring an infrared image sequence of a target airspace, dynamically adjusting the integral time and gain parameters of an infrared image by adopting a self-adaptive gain control algorithm based on a scene temperature histogram, and obtaining a target image sequence; generating an infrared image with enhanced thermal radiation characteristics; carrying out multi-level feature fusion detection on the infrared image by adopting a YOLOv5 improved multi-level global feature fusion network, and generating a saliency map containing the thermal features of the unmanned aerial vehicle rotor; according to the invention, by combining the infrared imaging technology, the improved YOLOv5 multi-level global feature fusion network and the improved BotSort algorithm, the detection precision and tracking stability of the low-altitude small unmanned aerial vehicle are effectively improved; the image quality is optimized through a self-adaptive gain control algorithm, the thermal radiation characteristic of the unmanned aerial vehicle is remarkably enhanced, and the failure problem caused by environmental interference in the traditional technology is avoided.

The invention discloses a reconstruction spectral imaging system based on an electromagnetic drive Fabry-Perot resonant cavity, and belongs to the field of spectral imaging. The system comprises an optical lens group, an electromagnetic driving device, a Fabry-Perot resonant cavity, a photoelectric detection array and a calculation unit, the cavity length of the Fabry-Perot resonant cavity can be adjusted through the electromagnetic driving device. The optical lens group receives light reflected or emitted by an external to-be-measured target scene and carries out collimation processing, and then the light enters the Fabry-Perot resonant cavity. The Fabry-Perot resonant cavity screens the incident light based on the resonance condition of the cavity length of the Fabry-Perot resonant cavity, and the screened light is emitted to the photoelectric detection array; the photoelectric detection array converts the incident light intensity into an electric signal and outputs the electric signal to the calculation unit; and a spectrum reconstruction model is built in the calculation unit, and a hyperspectral image of the to-be-measured target scene is obtained by using the spectrum reconstruction model based on the electric signal. The working range and the spectral imaging precision of the spectral imaging system based on the Fabry-Perot resonator are improved, the technological requirements are reduced, and the engineering applicability of the spectral imaging system based on the Fabry-Perot resonator is improved.

The embodiment of the invention is suitable for the technical field of detection, and provides a pulse processing circuit and method, a sensor and electronic equipment, the pulse processing circuit is configured to be connected with a photoelectric detector, the photoelectric detector comprises at least one photoelectric detection unit, and the photoelectric detection unit is used for outputting a digital pulse signal for a detected single photon; the pulse processing circuit comprises a pulse response module which is connected with at least one photoelectric detection unit and is configured to output a neural network input pulse signal corresponding to the photoelectric detection unit under the condition that a digital pulse signal is received; the neural network module is connected with the pulse response module and is configured to respond to neural network input pulse signals at different moments, generate feature data and output the feature data; the feature data is used for generating a detection result. According to the embodiment of the invention, the feature data can be extracted on the premise that the digital pulse signal does not need to be stored, and the data output quantity is effectively reduced.

The invention discloses an airborne low-detectability photoelectric long-distance stable tracking and aiming method based on a time-sensitive opposite target, and belongs to the technical field of airborne photoelectric detection and target tracking. The method comprises the following steps: step 1, target detection and miss distance calculation: in a level flight section of an airplane, imaging a target in a field of view, carrying out target detection by adopting an optical flow method, and detecting a moving target by analyzing a motion vector of pixel points in an image sequence; and resolving the deviation amount of the target image relative to the visual axis in real time, namely the target pixel miss distance. 2, designing a stable tracking loop: designing a two-layer control structure for the stable tracking loop, stably inhibiting high-frequency disturbance by a gyroscope of an inner loop, performing tracking correction on low-frequency deviation by an outer loop based on pixel miss distance, and finally realizing high-precision tracking. On the basis of real-time pixel miss distance feedback, a two-layer control structure is designed, the miss distance fed back by an outer ring tracking loop is converted into an inner ring control instruction, and the tracking precision and stability are improved.

The embodiment of the invention provides a photoelectric detection device and an optical detection device. The photoelectric detection device comprises a light beam separation assembly and a sensor assembly. The light beam separating assembly is used for separating the first light signal into a plurality of beams of second light signals. The sensor assembly is used for receiving multiple beams of second optical signals. The sensor assembly includes a plurality of sensors, the plurality of sensors including a multi-pixel sensor. The continuous first optical signal is divided into a plurality of small discrete second optical signals through the light beam separation assembly, so that the light sensing area of each sensor corresponding to a sample is further reduced, the haze noise on a single sensor is further reduced through the small light sensing area, and the haze noise on the single sensor is further reduced under the condition that the original first optical signal is not changed. Noise on a single sensor is reduced, and the signal-to-noise ratio of the photoelectric detection device is improved.

The embodiment of the invention particularly relates to a dosage monitoring device based on a scintillation fiber array and a beam control device. In the dose monitoring device, when a beam passes through a two-dimensional scintillation optical fiber array detector, a plurality of first scintillation optical fibers arranged in parallel in a first scintillation optical fiber layer and a plurality of second scintillation optical fibers arranged in parallel in a second scintillation optical fiber layer are excited to emit scintillation fluorescence, and the scintillation fluorescence is transmitted along the optical fibers and received by a photoelectric detection unit; and the photocurrent signal is further converted into a voltage pulse signal by the current-voltage conversion unit, and the output dose information and the radiation field dose distribution information of the electron accelerator can be further obtained according to the voltage pulse signal.

The invention belongs to the technical field of photoelectric detection, and discloses a heterojunction dual-band photoelectric detector based on a two-dimensional material, which comprises a substrate layer, an insulating layer, a molybdenum disulfide layer, graphene, black phosphorus and a metal electrode, the insulating layer is formed above the substrate layer, the molybdenum disulfide layer is located above the insulating layer, the molybdenum disulfide layer is formed above the insulating layer, no less than two layers of graphene are arranged above the molybdenum disulfide layer, and the top layer is multi-layer black phosphorus; the molybdenum disulfide layer, the graphene and the black phosphorus are in contact through Van der Waals force, a source electrode and a drain electrode of a formed heterostructure are connected with the metal electrode, and the molybdenum disulfide layer and the black phosphorus are isolated through the graphene and do not make contact with each other. In the invention, the intrinsic dark current in direct proportion to the effective transmission volume of the device is greatly reduced, and meanwhile, the current carriers are limited in a two-dimensional plane and are very easy to regulate and control by a local electric field, so that the dark current of the device can be further reduced, and the problem that the detector prepared from most traditional materials needs refrigeration at present can be solved.

A photodetection device according to one embodiment of the present disclosure includes: a semiconductor substrate having a first surface and a second surface that are opposed to each other and including a plurality of pixels arranged in an array in an in-plane direction; a first trench extending between the first surface and the second surface in an approximate middle of each of the plurality of pixels; a first semiconductor layer of a first conductivity type, the first semiconductor layer being provided in each of the plurality of pixels and extending between the first surface and the second surface; and a second semiconductor layer of a second conductivity type that is opposite to the first conductivity type, the second semiconductor layer being provided in each of the plurality of pixels and extending between the first surface and the second surface. When a reverse bias voltage is applied, a high electric field region is formed between the first semiconductor layer and the second semiconductor layer throughout between the first surface and the second surface.

The invention belongs to the technical field of photoelectric detection, and discloses a molybdenum ditelluride / nickel ditelluride heterojunction-based photoelectric detector and a preparation method and application thereof, and the molybdenum ditelluride / nickel ditelluride heterojunction-based photoelectric detector is prepared by stripping single crystal molybdenum ditelluride onto an oxide layer silicon substrate through a mechanical stripping method to obtain a molybdenum ditelluride nanosheet; a nickel ditelluride nanosheet is obtained through a chemical vapor deposition method; the molybdenum ditelluride nanosheet is transferred to the nickel ditelluride nanosheet through a PVA dry transfer method to form an overlapped part, and a molybdenum ditelluride / nickel ditelluride heterojunction is formed; and preparing electrodes at two ends of the molybdenum ditelluride / nickel ditelluride heterojunction through electron beam evaporation or thermal evaporation. The photoelectric detector utilizes a built-in electric field generated by a two-dimensional material heterojunction interface to effectively improve the photoelectric conversion efficiency and response speed of a visible light wave band.

The invention discloses a self-adaptive high-energy laser module, a forcible entry device and a forcible entry method. The self-adaptive high-energy laser module comprises a shell, and a first power supply assembly, a first controller assembly, a power-adjustable laser assembly, a first photoelectric detection assembly, a second photoelectric detection assembly and a focal length adjusting assembly are arranged in the shell; according to the invention, operation conditions such as the distance and the material of the to-be-broken target object can be automatically detected, the distance between the breaking device and the target object can automatically adjust the focusing position of the high-energy laser beam, and the output high-energy laser power can be automatically adjusted according to the material attribute of the target object on the breaking operation site; according to the method and the system, diversified field requirements of the forcible entry operation are met, meanwhile, the preparation process is simplified, the procedure link of manually setting parameters in the forcible entry operation field is avoided, the error probability is reduced, the capability of dealing with emergencies is enhanced, and the forcible entry task is more effectively completed without excessively damaging a target or causing unnecessary risks.

The invention relates to the technical field of quantum sensing, and discloses a quantum magnetometer device based on diamond NV color center photoelectric detection magnetic resonance. Wherein the optical path module performs optical excitation and imaging positioning on a diamond sample through a laser and an objective lens. The circuit module integrates a microwave source, a lock-in amplifier, a low-noise current amplifier and a programmable power supply, applies a microwave field and bias voltage to a microwave antenna and an interdigital electrode on the surface of a sample respectively, and collects sample dependency photocurrent signals. And the operation module realizes automatic control and data processing of the system. According to the device, NV color center spin state information is converted into a photocurrent signal through a photoelectric detection magnetic resonance mechanism, an amplitude or frequency modulated signal is demodulated by using a lock-in amplification technology, information of a detection magnetic field is obtained through a high signal-to-noise ratio photoelectric detection magnetic resonance spectrum, and the sensitivity of the magnetic field is evaluated. Magnetic resonance signals are detected in an all-electricity mode, a complex optical system of traditional fluorescence detection is simplified, and the device has the advantages of being compact in structure, easy to integrate, high in measurement sensitivity and the like.

A semiconductor device having high operation reliability that includes a semiconductor substrate, a light receiving section, a multiplier, a first electrode, a second electrode, and a resistor. The semiconductor substrate includes a pixel array section in which a plurality of pixels is disposed in an array. The light receiving section is inside the semiconductor substrate for each of the pixels, and generates carriers according to quantities of received light. The multiplier on a first surface of the semiconductor substrate for each of the pixels has a laminated structure of first and second conductivity type regions, and avalanche-multiplies the carriers generated in the light receiving section. The first electrode is electrically coupled to the multiplier. The second electrode is electrically coupled to the light receiving section. The resistor includes a polycrystalline semiconductor material and is in contact with the first electrode, while facing the first surface.

The invention provides a space target attitude optical detection device and method, and relates to the field of photoelectric detection and imaging, and the device comprises a Bessel polarization beam emission subsystem, a polarization characteristic and optical signal receiving subsystem, a polarization imaging subsystem, a timing subsystem and a control subsystem. The detection stability and accuracy are further improved through the self-healing property of the Bessel beam; through fusion of the visible light image and the polarization image, the target detection and identification capability can be enhanced, and the detection precision of the space target attitude is further improved.

The invention relates to the technical field of quantum precision measurement, and provides a quantum magnetometer which comprises a solid-state spinning color center probe, a microwave module, a laser module, a photoelectric detection module, a lock-in amplification module, a PID module and a data processing module. According to the scheme, an ODMR sweep frequency spectrum line does not need to be drawn when the magnetic field is measured every time, tracking of the changing magnetic resonance frequency can be rapidly achieved through comparison of the target data and the demodulation result, the time for obtaining the new magnetic resonance frequency is greatly shortened, and the magnetic measurement efficiency of the quantum magnetometer is improved.

The invention provides a rare earth doped gallium oxide thin film material and a preparation method and application thereof. The preparation method comprises the following steps: in a vacuum chamber, depositing a thin film on the surface of a cleaned substrate by using a rare earth oxide doped gallium oxide target material through a single-target radio frequency sputtering method to obtain the rare earth doped gallium oxide thin film material. Rare earth elements are doped in gallium oxide through a single-target radio frequency magnetron sputtering method, physical properties such as forbidden bandwidth of the gallium oxide material are regulated and controlled, application of the gallium oxide material in the field of photoelectric detection or semiconductor light-emitting devices is widened, and the obtained rare earth doped gallium oxide thin film material is uniform in surface film formation and high in yield. The average transmittance at the wavelength of 350-800 nm is greater than 90%, and the doping concentration of rare earth elements in the gallium oxide thin film material can be adjusted by directly replacing target materials with different doping proportions; the preparation method disclosed by the invention is simple, does not need expensive equipment, has obvious cost advantage and is suitable for large-scale production.

The invention provides a photoresponse water photovoltaic power generation device based on nano tungsten oxide and a preparation method of the photoresponse water photovoltaic power generation device, and relates to the field of water evaporation induced new energy power generation and novel photoelectric detection. The water photovoltaic power generation device is composed of a substrate, a positive electrode, a negative electrode and a slurry layer, wherein the slurry layer is obtained by drying slurry formed by mixing tungsten oxide, a Nafion solution and deionized water; the water photovoltaic power generation device can generate an open-circuit voltage of 1.4-1.8 V and a short-circuit current of 100-140 nA under the evaporation induction of deionized water. Under the illumination with the wavelength of 435 nm, the output voltage and current change along with the illumination intensity, and the material has the obvious light response characteristic and is expected to be used for optical detection and hydrovolt generator theory research.

The invention relates to the technical field of photoelectric detection, and particularly discloses a three-dimensional defect detection method and system based on compound color stripe projection, and the method comprises an upper computer control and processing module which is used for generating a compound color stripe pattern coded with phase difference information, and coordinating and controlling the synchronous operation of the whole system; the structured light projection module is used for receiving the composite color stripe pattern and projecting the composite color stripe pattern to the surface of a measured object at one time; the imaging module is used for receiving the composite colored light reflected after being modulated by the surface of the measured object and separating the composite colored light into monochromatic light signals with different colors for synchronous acquisition; the imaging module further comprises an active highlight suppression unit which is used for dynamically adjusting the polarization direction according to an instruction of the upper computer control and processing module so as to suppress highlight caused by specular reflection. Multiple groups of sine fringes with fixed phase differences are projected to the surface of a measured object at one time. And a plurality of deformed fringe patterns with phase displacement can be synchronously acquired under single exposure.

The present invention relates to the technical field of hydrogen concentration detection, and specifically discloses a trace hydrogen concentration sensing system based on TDLAS absorption spectroscopy, which is used to solve the problems of low detection sensitivity, narrow linear range, large system drift and dependence on external calibration in TDLAS hydrogen detection. The system comprises a laser emission module and a photoelectric detection module, wherein the laser emission module and the photoelectric detection module are connected via a dual-light path absorption module, the photoelectric detection module is connected to a harmonic extraction module, the harmonic extraction module is connected to a normalization processing module, and the normalization processing module is connected to a concentration inversion module. The present invention realizes high linearity, high sensitivity, and calibration-free concentration detection of hydrogen within 0.01% to 100% by constructing a symmetrical dual-light path structure, adopting a harmonic signal normalization and differential compensation algorithm, and combining a high-pressure reference gas cell with a segmented fitting model, thereby improving the trace hydrogen identification capability.

The invention belongs to the technical field of mid-infrared photoelectric detectors, and particularly relates to a mid-infrared photoelectric detector based on an ultra-thin metasurface and a preparation method thereof.The method comprises the steps that firstly, a substrate and an element atomic material are provided, an ellipsometry test is conducted to obtain dielectric functions of the substrate and the element atomic material, the dielectric functions serve as input to be substituted into finite element software, and the finite element software serves as the input to obtain the ultra-thin metasurface-based mid-infrared photoelectric detector; theoretical modeling design is carried out on the metasurface, the metasurface is manufactured after the appropriate metasurface size is obtained, then reflectivity and transmissivity tests under different polarizations are carried out on the metasurface through an ellipsometry test, a metal layer is deposited on the metasurface through a standard electron beam evaporation technology to serve as an electrode, and the metasurface is manufactured. And finally, a CO2 laser is selected to irradiate the metasurface in a photoelectric detection experiment. By optimizing the structure parameters and the material performance of the metasurface, middle and far infrared broadband absorption, efficient photo-thermal conversion and photoelectric response are achieved, and therefore the problems that in the prior art, the corresponding wavelength is short, devices are heavy, and the detection efficiency is insufficient are solved.