A
light emitting device (100; 300; 400) comprising: a heater structure (140) configured to emit light when a predefined current flows through the heater structure (140), wherein the heater structure is arranged on a heater support structure (130); an upper portion (150) of a cavity disposed vertically between the heater support structure (130) and a cover structure (160); a lower portion (120) of the cavity disposed vertically between the heater support structure (130) and at least a portion of a support substrate (110); an
optical filter structure configured such that light passing through the
optical filter structure has a spectral maximum at a desired
optical wavelength when the
optical filter structure is implemented through the cover structure (160) or is arranged between the lower portion (120) of the cavity and a back surface of the
light emitting device (100; 300; 400), wherein the optical filter structure comprises a plurality of
semiconductor layers of a filter layer stack and a plurality of insulating
layers or cavity
layers of the filter layer stack arranged alternately; and Side walls of the upper section (150) and the lower section (120), wherein side walls of the upper section (150) or the lower section (120) on which the filter structure is arranged are formed by an
oxide layer, wherein the heater support structure (130) comprises a plurality of holes connecting the upper portion (150) of the cavity and the lower portion (120) of the cavity, and wherein a pressure in the cavity is less than 100 mbar.