451 results about "Lasing wavelength" patented technology

The invention belongs to the technical field of side slope monitoring, and particularly discloses and provides a side slope deformation three-dimensional monitoring system based on fusion laser ranging, which comprises a deformation rule analysis module, a monitoring switching judgment module, an environment monitoring module, a side slope deformation analysis terminal and a deformation risk processing terminal. According to the invention, by identifying abnormal characteristics such as slope change overlimit, automatically capturing potential high-risk areas such as acceleration abrupt change areas and triggering monitoring setting dynamic updating, the problem of coverage blind areas of fixed monitoring areas is effectively solved, adaptive tracking monitoring of slope high-risk points is realized, and the method is suitable for large-scale popularization and application. Meanwhile, a multi-dimensional slope deformation risk assessment mechanism is constructed by performing fusion processing on a past environment tracking log and a three-dimensional coordinate sequence and setting a deformation risk compensation weight, the limitation of traditional single-point monitoring is broken through, and the slope deformation risk assessment mechanism is established by collecting the humidity of a slope area in real time and selecting laser wavelength. And the interference of environmental noise on three-dimensional coordinate data acquisition is reduced.

The invention relates to a method and a system for detecting the concentration of trace methane by locking the position of an absorption peak, and belongs to the technical field of laser gas detection. Modulated laser output by a laser is divided into two paths, one path enters a reference light path, the other path firstly passes through a gas absorption cell and then enters an actual detection light path, and methane gas with known concentration is sealed in the reference light path; demodulating a modulation signal output by the actual detection light path, and calculating to obtain a trace methane gas concentration value; and demodulating the modulation signal output by the reference light path to obtain a second harmonic signal, comparing the amplitude of the second harmonic signal with the amplitude of a harmonic signal corresponding to a preset methane absorption peak to generate a wavelength shift error signal, and adjusting the driving parameter of the laser through a feedback mechanism to generate a wavelength shift error signal. The output power and wavelength drift of the laser are monitored in real time, and it is ensured that the laser wavelength is always locked within the methane absorption peak range. According to the invention, high-precision and high-stability trace methane concentration detection can be realized.

The invention discloses a method and a device for inhibiting laser wavelength temperature drift, relates to laser wavelength measurement and laser frequency stabilization, and belongs to the field of atomic physics and quantum optics. The device comprises a laser output light unit, a high-precision wavemeter monitoring unit and a temperature drift feedback control unit. And measuring a wavelength drift coefficient a of environment temperature T environment-laser wavelength lambda. Measuring a set temperature Tset-laser wavelength lambda and a wavelength control coefficient b; and according to the measured coefficients a and b, calculating to obtain a temperature gradient compensation coefficient c (c = a / b). When the laser works normally, the T environment is collected in real time, and the set temperature Tset of the laser is changed according to the temperature gradient compensation coefficient c and the T environment, so that the laser wavelength temperature drift is inhibited. According to the invention, active suppression of laser wavelength temperature drift is realized by regulating and controlling a temperature gradient compensation coefficient. The device has the advantages of being simple in structure, high in wavelength drift suppression capability, low in energy loss and the like.

The invention provides a tunable micro-nano laser based on a perovskite phase change material and a preparation method thereof, and belongs to the technical field of micro-nano photoelectron, the tunable micro-nano laser comprises a substrate, and a distributed Bragg reflector, a gain dielectric layer and a reflector which are sequentially arranged on the substrate from bottom to top; wherein the gain medium is a perovskite material with a crystal phase transition characteristic. The substrate is made of a material which is transparent or low in loss to pump light and emitted light; the distributed Bragg reflector is formed by alternately arranging high-refractive-index layers and low-refractive-index layers; the gain dielectric layer is a perovskite thin film layer with a crystal phase transition characteristic, and a perovskite material has a spectrum tuning function in the laser resonant cavity; the reflecting mirror is composed of a metal film. According to the invention, the perovskite material is used as a gain medium and a phase change material at the same time, the wide-range tuning of laser wavelength is realized, and the tuning range can reach several nanometers or even wider; the energy utilization efficiency can be improved, the stability is high, and the method is suitable for various types of tunable micro-nano laser applications.

The invention discloses a high-sensitivity miniaturized HOx free radical accurate measurement device and method, and relates to the technical field of atmospheric environment detection and automatic control, and the device is composed of a free radical generation and removal device, a light source module, longitudinal HOx double cavities, a gas distribution module and a collection and control system. The free radical generation and removal device can generate HOx free radicals or remove OH free radicals; the light source module can emit laser which enables OH free radicals to generate fluorescence and transmit the laser into the longitudinal HOx double-cavity; the longitudinal HOx double cavities are used for exciting OH free radicals to generate a large amount of fluorescence and collecting and converting the fluorescence into electric signals; the gas distribution module is used for injecting gas in the device and maintaining the flowing state of gas flow; and the control and acquisition system is used for controlling automatic operation and data acquisition and processing of the device. The device has the advantages of being high in detection sensitivity, small in size and capable of rapidly obtaining and removing OH free radical measurement interference, rapid calibration of similar concentration can be conducted on the actual HOx concentration in the actual measurement environment, accurate spectrum determination can be conducted on the laser wavelength, and therefore high-sensitivity accurate measurement of HOx free radicals is achieved.

The invention discloses an electronic device parasitic parameter network analysis method based on point cloud deep learning and a related device, and the method comprises the steps: obtaining physical characteristic data in a laser-induced quartz material process, and the physical characteristic data comprises laser wavelength, pulse width, photon energy and material characteristics; and inputting the physical characteristic data into the trained neural network model, and predicting the damage threshold of the laser-induced quartz material. According to the machine learning method fusing physical information, unification of data efficiency and physical consistency is achieved, prediction precision and model expandability are remarkably improved, and the method is used for accurately predicting the damage threshold value of the quartz material under the specific laser condition, so that the laser processing technology is optimized, and the processing precision and efficiency of the quartz material are improved.

The invention discloses an ultrahigh resolution interferometer measurement method and system based on a phase shift gauge block, and the method comprises the steps: placing an ultrahigh resolution interferometer and a preset phase gauge block in a heat preservation box, and introducing two kinds of frequency stabilization laser into the heat preservation box through a single-mode optical fiber; obtaining interference fringe data by adopting a five-step phase shift method, and adjusting the interference fringe data according to the laser wavelength to obtain adjusted data; acquiring environmental data containing the preset phasor block in the heat preservation box, and correcting the adjustment data by eliminating change influence based on the environmental data to obtain corrected data; determining the length of the preset phasor block according to the decimal number of the interference fringes and the integer series of the interference fringes under different wavelengths through a multi-wavelength decimal superposition method, obtaining the measurement data of the Korotkoff interferometer, carrying out the adaptive compensation of the phase shifter, correcting the length according to the uncertainty of the measurement data, and obtaining the phase of the Korotkoff interferometer. The output is a measurement result.

The invention relates to the technical field of ultrasonic sensors, and discloses an optical fiber end face integrated micro-cavity sonic sensor which comprises a seven-core optical fiber, two light propagation waveguides, a coupling waveguide, a supporting assembly, a micro disc, a light emitter and a photoelectric detector, the two light propagation waveguides are arranged on the end face of the seven-core optical fiber, the coupling waveguide is arranged between the two light propagation waveguides, and the supporting assembly is arranged on the end face of the seven-core optical fiber. A supporting assembly is arranged on the end face of the seven-core optical fiber, a micro disc is arranged on the top of the supporting assembly, and the first fiber core and the second fiber core are connected with an external light emitter and an external photoelectric detector respectively. The wavelength of the laser output by the light emitter is locked at the linear slope of the micro-disk harmonic peak, the radius and the effective refractive index of the micro-disk are changed through the action of ultrasonic waves on the micro-disk and vibration, the harmonic peak drifts and the intensity of the output laser is changed, and then the ultrasonic waves are detected; compared with the prior art, ultrasonic waves are detected through a micro-disk resonance and laser sideband locking method, and the problem of electromagnetic interference can be effectively avoided by utilizing the optical principle.

The invention relates to the technical field of lasers, in particular to a multi-wavelength laser structure which comprises a heat sink capable of rotating along a rotating shaft, and the rotating shaft is perpendicular to the top face of the heat sink. The wavelengths corresponding to the gain chips in the plurality of gain chips are different, and the plurality of gain chips are annularly arranged on the top surface of the heat sink around the rotating shaft; the output coupling mirror is positioned on one side, far away from the heat sink, of the plurality of gain chips, and the output coupling mirror is matched with the gain chip opposite to the output coupling mirror to form a laser resonant cavity so as to realize laser output; wherein the heat sink rotates along the rotating shaft to switch the gain chips right opposite to the output coupling mirror, when different gain chips are matched with the output coupling mirror, the wavelengths of the lasers output by the multi-wavelength laser structure are different, and the multi-wavelength laser structure at least facilitates the switching of the wavelengths of the output lasers and the simultaneous output of the lasers of multiple wavelengths by adopting a single laser.

The embodiment of the invention relates to the field of antenna calibration, in particular to an antenna gain calibration system and method based on Rydberg atoms, and the system comprises a frequency stabilization module of a detection light source, a light path module, a microwave module, a signal detection module and a darkroom. A frequency stabilization module of the detection light source is used for stabilizing the laser wavelength of a semiconductor laser in a light path module, so that the laser wavelength is suitable for detection light of a Rydberg electromagnetically induced transparency (EIT) system; the light path module is used for generating coupling light and detection light; the coupling light and the detection light are oppositely emitted in an alkali metal atom gas chamber in the darkroom, alkali metal atoms in the alkali metal atom gas chamber are excited to be in a Rydberg state through two-stage excitation, and an EIT signal window needed by an experiment is obtained; the microwave module is used for generating and transmitting a microwave signal to control a microwave electric field in an experiment, and the microwave electric field influences an EIT signal; the signal detection module is used for converting the detection light into an electric signal, and the electric signal is collected through an oscilloscope in the signal detection module so as to be analyzed.

The invention discloses an automobile part location degree measuring method and device, a product and a storage medium, and relates to the field of electrical digital data processing.The method comprises the steps that three-dimensional contour coordinates of a plastic surface layer are determined based on surface reflected light intensity data, and the optical path difference of laser from the plastic surface to a metal insert is calculated according to internal refracted light intensity data; calculating the depth position of the metal insert according to the optical path difference and the refractive index of the plastic material; determining the spatial position relation of the metal insert structure relative to the plastic surface layer by combining the three-dimensional contour coordinate and the depth position; calculating an actual assembly deviation value between the spatial position relation and the standard assembly position; when the actual assembly deviation value is greater than a preset first threshold value, selecting a preset laser wavelength combination according to the actual assembly deviation value; and scanning the automobile part according to the preset laser wavelength combination to obtain a location degree measurement result. By implementing the method, the measurement precision of the metal insert in the automobile part can be improved.

The invention discloses an intelligent visual detection system for a high-precision printed circuit board, and relates to the technical field of precision optical detection.The intelligent visual detection system comprises the steps that based on a printed circuit board substrate with a quantum dot mark layer attached to the surface, confocal scanning is conducted through laser wavelength, and an original image data set is generated; performing multispectral feature analysis on the original image data set, capturing focus offset rules of light rays with different wavelengths, and generating a wavelength-focus mapping relation compensation instruction set; according to the compensation instruction set of the wavelength-focus mapping relation, an imaging light path is adjusted in real time, and a high-fidelity fusion image is generated; and analyzing optical signal feature changes in the high-fidelity fusion image, identifying an abnormal region, extracting microdefect features, and generating a detection report containing the defect features. According to the invention, through uniform dispersion of the quantum dot modified ink in the inert atmosphere and a plasma substrate activation process, molecular-level combination of the solder mask layer and the fluorescent marking material is realized.

The invention belongs to the technical field of optical beauty, and discloses a medical beauty device with an LED light source and a body beauty system based on phototherapy, and the method comprises the steps: collecting multi-source data for fusion, and generating a skin health map through an ICP registration algorithm; based on the skin health map, segmenting a high-tolerance area and a blood vessel dense area; distributing laser wavelength, energy density and cooling parameters for each area; the dynamic thresholds are adjusted in real time in a self-adaptive mode through the dynamic thresholds; determining and dividing risk grades through multi-parameter fusion, triggering a grading response mechanism, and generating dynamic energy configuration parameters and a safety control strategy; based on the three-dimensional point cloud coordinates and spatial constraint conditions, dynamically adjusting laser path planning through a path re-planning algorithm, and generating a phototherapy execution log; generating a curative effect evaluation report based on the phototherapy execution log, and constructing a photoaging risk map; and updating the energy rule base through a reinforcement learning algorithm, and determining parameters of a threshold value and a weight coefficient of a registration algorithm to form closed-loop optimization.

The invention relates to an energy-level-controllable small laser irradiation grafting and crosslinking system and an application method thereof, and belongs to the technical field of material processing and modification. The system is composed of an adjustable laser source, a focusing optical system, a laser energy regulation and control module, a machining platform, a chemical reaction auxiliary module, a real-time monitoring and feedback system and an intelligent control system, laser wavelength, power and pulse width can be accurately controlled, and micron-level machining precision is achieved. Compared with a traditional chemical grafting method, a thermal induction crosslinking method and a plasma treatment method, the method has the remarkable advantages of non-contact processing, low energy consumption, high precision, environmental friendliness and the like. The system supports efficient grafting and crosslinking of various materials (such as polymers, metals and ceramics), the processing efficiency and the material performance are remarkably improved, and an innovative solution is provided for material functionalization and green manufacturing.

The invention belongs to the technical field of optical communication, and particularly relates to a narrow linewidth laser based on a cascaded micro-ring resonant cavity. The laser comprises a semiconductor laser inner cavity module, a gain chip module, a phase shifter, a cascade micro-ring resonant cavity module, a thermal tuning module and an outer cavity reflector. The gain chip is combined with an III-V group material at the top of the silicon waveguide through heterogeneous integration, and adopts an InAlGaAs quantum well to provide high gain; the phase shifter is used for matching the lasing wavelength with the resonant wavelength; the cascaded micro-ring resonant cavity is formed by cascading three micro-rings, and tuning of the laser is realized based on a vernier effect; the thermal tuning module is composed of three semi-annular metal strips and a straight waveguide-shaped metal strip. The outer cavity reflector module adopts a Sagnac ring structure; the laser inner cavity, the gain chip, the cascade micro-ring resonant cavity and the outer cavity reflector are directly connected through silicon waveguides. The laser has the characteristics of narrow linewidth and wide tuning range, is easy to highly integrate and interconnect, and has important application value.

An optical source is described. This optical source may include a semiconductor laser chip and a silicon-photonics chip that provide an optical cavity. The semiconductor laser chip may provide gain at multiple lasing wavelengths in a band of wavelengths. Moreover, the silicon-photonics chip may adjust a size of an optical signal proximate to an interface between the semiconductor laser chip and the silicon-photonics chip. Furthermore, by adjusting a phase of a phase shifter and resonance frequencies of a micro-ring resonator in the silicon-photonics chip, a center frequency of a passband of the micro-ring resonator may be matched to a non-zero integer multiple of a cavity-mode spacing. This may allow the optical source to mode-lock the lasing wavelengths of the optical source by suppressing unwanted lasing wavelengths and re-enforcing the lasing wavelengths. In some embodiments, a free-spectral range of the optical source may be between 100 GHz and 800 GHz.

According to the laser chip capable of inhibiting in-plane amplified spontaneous emission, the first inclined edge and the second inclined edge are designed, opposite edges parallel to the first cleavage edge and the second cleavage edge respectively are damaged, a first parasitic cavity and a second parasitic cavity existing in a natural cleavage laser chip are eliminated, and the laser chip can inhibit in-plane amplified spontaneous emission. Therefore, the formation of in-plane amplified spontaneous emission of the laser chip is remarkably inhibited, meaningless consumption of carriers in a laser emission layer in the laser chip is prevented, the luminous efficiency of the laser chip on laser wavelength can be improved, the light-light conversion efficiency of the laser from pump light to emission laser is improved, and the output power of the laser is finally improved. And secondly, due to the suppression of amplified spontaneous radiation in a laser chip plane and the improvement of the light-light conversion efficiency of the laser, the power consumption of the laser can be obviously reduced under the condition of certain output power, the operation cost of the laser is reduced to a certain extent, and the cost performance of the laser is improved.

The invention discloses a multi-field adjustable high-speed electro-optical logic device and an implementation method thereof. According to the invention, light output is electrically controlled, and two logic functions are realized on the same device; the input laser wavelength comprises a main communication wave band, and a PL output signal is matched with an atmosphere window, so that information transmission is facilitated; the working switch ratio of the logic device is greater than two orders of magnitude, static power consumption is reduced, and the anti-interference capability and the accuracy of logic operation are improved; the response time is short, the key effect on improving the operation speed is achieved, and high-frequency work is supported; a PL output signal is sensitive to polarization, so that the degree of freedom of transmitted information is higher; the method is applied to the fields of encryption transmission of efficient optical communication, logic operation in an all-optical chip and the like; not only is the working switch ratio as high as 2 orders of magnitude shown, but also the nanosecond-order response speed can be maintained, so that the method has great potential to solve the problems in the science and technology fields such as encryption transmission of efficient mid-infrared light communication.

The invention relates to a semiconductor structure and a preparation method thereof, and the method comprises the steps: providing a substrate, and forming an injection layer on the substrate; forming a buffer layer and a drift layer on the injection layer, and performing laser annealing on the buffer layer and the drift layer from one side away from the substrate; a plurality of conductive channel units arranged at intervals are formed on the upper surface layer of the drift layer, laser annealing is conducted on the conductive channel units from the side away from the substrate, and each conductive channel unit comprises a well region, an emitter region and a contact region, forming a gate structure above the well region; removing the substrate to expose the injection layer; laser annealing is carried out on the injection layer from the side, away from the buffer layer, of the injection layer, and laser wavelengths used in laser annealing of the buffer layer, the drift layer, the conductive channel unit and the injection layer are selected based on light absorption characteristic parameters of the injection layer, the buffer layer and the drift layer. According to the semiconductor structure and the preparation method thereof, the formation of parasitic capacitance is reduced, and the device performance is improved.

The invention belongs to the technical field of metal-based composite material additive manufacturing, and particularly relates to ultrasonic-assisted green laser equipment for copper-based diamond cooling fin machining, which comprises a rack, a printing cabin, a green laser machining system, an ultrasonic-assisted system, a powder spreading system, a gas control system, an intelligent control system and an online monitoring system. By integrating a green laser processing system and an ultrasonic auxiliary system, an ultrasonic-green laser-powder multi-energy field coupling processing system is constructed, the wavelength of green laser is 532 nm, the absorption rate of copper is increased, and compared with traditional infrared laser, low-power and high-efficiency melting of copper can be achieved, the diamond graphitization risk is reduced from the angle of a heat source, and the production cost is reduced. Ultrasonic vibration is transmitted to a molten pool through a substrate coupling type structure, by means of the cavitation effect and the acoustic streaming effect, the interface wettability of copper and diamond is effectively improved, the interface bonding force is enhanced, the interface thermal resistance is reduced, meanwhile, grains are refined, pores are eliminated, residual stress is reduced, and the comprehensive performance of the cooling fin is remarkably improved.

The invention belongs to the technical field of ultra-precise angle measurement, and discloses a three-dimensional angle measurement device and method based on wavefront interference fringes. According to the invention, two wavefront interference light spots are generated by using two paths of detection laser in a single interference measuring head with only a single coordinate reference, the spatial frequencies of respective fringe images in the horizontal and vertical directions are respectively calculated, and simultaneous decoupling is carried out so as to accurately measure the pitching, deflection and rolling angle deviations of the reflector. According to the three-dimensional angle measurement device, point-to-point three-dimensional angle measurement can be achieved, the measurement resolution is high, the measurement result can be directly traced to the laser wavelength, and the requirement of high-end equipment for ultra-precise three-dimensional angle measurement is met.

The embodiment of the invention relates to a semiconductor laser, a light emitting assembly and an optical module. The semiconductor laser comprises a resonant cavity structure, the resonant cavity structure comprises a resonant cavity, the resonant cavity is used for generating standing waves, and the resonant cavity is limited by a bottom reflector structure and a top reflector structure; a multi-quantum well structure is arranged in the resonant cavity, and the multi-quantum well structure is arranged at the wave crest position of the resonant cavity; the thickness of the resonant cavity is designed to be smaller than three-second lasing wavelength so as to improve the relaxation oscillation frequency of the semiconductor laser. By applying the scheme of the invention, the relaxation oscillation frequency can be improved, and the modulation bandwidth of the device is improved.

According to the high-stability laser provided by the invention, the multi-quantum well resonance region is arranged in the laser chip, and the structure ensures that each quantum well in the multi-quantum well resonance region is strictly positioned at the wave crest of a laser standing wave field, so that the maximum gain is formed. When the wavelength is smaller than or larger than the laser wavelength, each quantum well deviates from the wavelength of the standing wave field, and the maximum gain cannot be obtained. Therefore, the structure can effectively suppress oscillation of other wavelengths and ensure that the wavelength of the output laser is stable and unchanged. Secondly, a compound semiconductor material is adopted as a gain material, and the compound semiconductor material has very short upper energy level lifetime and the gain in parabola regular distribution, so that when the laser generates oscillation, only the mode with the maximum gain forms laser oscillation, and no intense mode competition exists, thereby ensuring that the mode of the output laser beam does not generate random jump, and improving the laser output efficiency. Therefore, the intensity of the output laser is stable.

The invention discloses an unmanned aerial vehicle intelligent inspection detection method and system in a hearth, and relates to the technical field of industrial equipment state monitoring, and the method comprises the following steps: transmitting laser wavelength to a target area through a dual-wavelength laser radar carried by an unmanned aerial vehicle, and collecting reflected laser point cloud data and flue gas component data; according to the laser point cloud data, establishing a correlation mechanism of particle size distribution and scattering angles, and calculating the thickness of deposited dust after suspended particle interference is removed; and based on the flue gas component data, constructing a dynamic corrosion rate prediction model in combination with the ash deposition thickness, and outputting a corrosion risk level. And dynamically adjusting the laser scanning frequency of the corresponding area according to the corrosion risk level. Through the constructed dynamic corrosion rate prediction model, three types of core driving factors, namely the sulfate radical concentration, the chloride ion concentration and the ash deposition thickness, in the corrosion process are coupled in a linear addition form, and the change trend of the corrosion risk along with the operation condition can be accurately reflected.

The invention provides a broadband tunable light emitting chip based on an asymmetric multi-quantum well technology and a preparation method, the tunable light emitting chip comprises a plurality of laser units distributed in columns, and each column of laser units comprises a plurality of lasers connected in series; the laser units achieve single-waveguide laser output through cascade Y waveguide combination, each laser comprises an asymmetric multi-quantum well layer and a grating layer, the thickness of each quantum well is gradually decreased from top to bottom, and a grating is located on the surface of the upper limiting layer. The tunable lasers connected in series and in parallel are adopted, and single-waveguide laser output is achieved through cascade Y waveguide combination; the asymmetric multiple quantum wells are arranged, so that the overall tunable range of the laser can be widened; a sampling grating is manufactured through a reconstruction equivalent chirp technology to select a lasing wavelength, and pi phase shift is introduced to carry out phase matching so as to ensure single wavelength output; according to the invention, gains can be provided for a plurality of laser units, the density of monolithic integration is improved, the transmission capacity is increased, and the single-mode yield is improved.

The invention relates to a nonlinear optical crystal and crystal combined adhesive and a preparation method thereof. The nonlinear optical crystal and crystal combined adhesive comprises the following components in parts by weight: 40-70 parts of hydrogenated bisphenol A type acrylate monomer; 20 to 40 parts of a polyfunctional thiol compound; the core of the core-shell structure nanoparticles is ZrO2, the shell of the core-shell structure nanoparticles is SiO2, the particle size of the core is 20-50nm, and the thickness of a shell layer is 3-8nm; and 0.1 to 0.5 part of a coupling agent containing a phosphate group. Through accurate regulation and control of the ZrO2atSiO2 core-shell nanoparticles, the refractive index of the adhesive can be adjusted in a range of 1.65-2.10, and is highly matched with the refractive index 1.7-2.2 of nonlinear optical crystals such as KTP, BBO and LBO, so that the Fresnel loss of a bonding interface is reduced to be less than or equal to 0.5 dB / cm, the laser frequency conversion efficiency is remarkably improved, agglomeration is effectively inhibited by the core-shell structure of the nanoparticles, and the laser frequency conversion efficiency is improved. The light transmittance of a cured adhesive layer under common laser wavelengths such as 1064 nm, 532 nm and 355 nm is larger than or equal to 99.5%, the adhesive layer is suitable for a high-power laser system, by adding the quantum dot material, the refractive index matching of the specific wavelength can be further optimized, and the application scene is expanded.

The invention discloses an iterative harmonic working point static verification method, electronic equipment and a storage medium, and belongs to the technical field of static verification, the iterative harmonic working point static verification method comprises the following steps: placing an optical electric field sensor and verification equipment in a Faraday cage; an alternating current source is connected to a high-voltage transformer, a power frequency electric field with known intensity is generated through a pair of parallel electrode plates, and an optical electric field sensor is located between the pair of parallel electrode plates; emitting polarized light to an optical electric field sensor waveguide, and loading an electric field signal to be measured on a light wave; converting the electric field signal into an analog electric signal through a photoelectric conversion circuit; and the digital signal processing circuit demodulates and calculates the numerical value of the measured electric field. Static working point calibration is performed through a power frequency electric field environment, and a linear working point of the sensor is controlled by using a laser wavelength tuning and iteration method, so that the stability and accuracy of the optical electric field sensor in a high-voltage electric field environment are improved.

The invention discloses an output wavelength closed-loop adjustment method and system based on a negative feedback adjustment device, and relates to the field of external cavity quantum cascade lasers. According to the output wavelength closed-loop adjusting method, during the working period of the external cavity wide-spectrum tuning laser, the real-time light spot position is calculated through a negative feedback adjusting device, the real-time light spot position is matched with the light spot position in a calibration data table to obtain the corresponding laser wavelength, and the output wavelength is adjusted by comparing the laser wavelength with the target laser wavelength. Determining a voltage adjustment value, controlling the current working voltage of the galvanometer driver to be increased or decreased according to the voltage adjustment value, and circulating the process until the laser wavelength output by the resonant cavity is stabilized in the target laser wavelength or an allowable error range thereof; accurate control over the rotating angle of the galvanometer is achieved, and repeatability and accuracy of the output wavelength are improved.

The invention provides a dual-mode resonance optical fiber microcavity air pressure measurement system and method, and relates to the technical field of optical fiber microcavity air pressure measurement, and the system specifically comprises a sensing probe preparation module, a two-parameter sensitivity matrix calibration module, an optical fiber laser sensing system construction module, a real-time change monitoring module and a decoupling and output module. Femtosecond laser etching is combined with high-temperature tapering, an open type microcavity is manufactured on a single-mode optical fiber, a micro-nano cone area is formed, and the sensing probe with two resonance valleys with different temperature and air pressure response characteristics is obtained. A sensitivity coefficient matrix is obtained through calibration, a probe serves as a filter to be embedded into an annular optical fiber laser cavity, and an optical fiber laser with the laser wavelength locked by a resonance valley is constructed. Laser wavelength drift is caused by environmental change, real-time synchronous measurement of temperature and air pressure is realized by utilizing inverse matrix decoupling, and the method is suitable for high-precision and anti-interference monitoring of harsh industrial environments such as aero-engines and power transformers.

The invention belongs to the related technical field of semiconductor doping, and discloses a method for acquiring a second harmonic signal of non-uniform ion implantation doping concentration and an application of the second harmonic signal of the non-uniform ion implantation doping concentration. Determining refractive indexes and absorption coefficients of different depth positions of the ion implantation doping sample under a specific laser wavelength based on an optical property distribution model in the ion implantation doping sample; s2, calculating fundamental frequency light electric field distribution in the doped sample based on the obtained refractive index and absorption coefficient; s3, calculating the polarization intensity and effective second-order polarizability of the non-uniform doped ion implantation sample based on the simplified bond hyperpolarizability model and the fundamental frequency photoelectric field distribution; and S4, calculating far-field second harmonics of the corresponding layers at a predetermined observation angle based on the obtained polarization intensity or effective second-order polarizability of each layer, and carrying out integration on the far-field second harmonics corresponding to all layers to obtain the total intensity of the second harmonics of junction depth far-field radiation. According to the invention, the problem that the measurement sensitivity and repeatability are reduced is solved.