206 results about "Laser array" patented technology

The invention belongs to the technical field of cable manufacturing. According to the self-adaptive correction method and system based on cable insulation layer thickness monitoring, the real-time center offset of a cable is determined according to laser array measurement data after time-space synchronization; determining the thickness of the cable according to the X-ray thickness measurement data after time-space synchronization; determining the long-short axis ratio of the ellipse according to the shot cable ellipse contour image after the time-space synchronization; inputting the real-time center offset of the cable, the thickness of the cable and the long-short axis ratio of the ellipse into an extended Kalman filter to obtain fusion thickness, fusion concentricity and fusion ellipticity, and further determining an extrusion die pose compensation vector and a screw rotation speed correction amount; according to the extrusion die pose compensation vector, a corresponding execution mechanism is driven to adjust the extrusion die pose, and according to the screw rotation speed correction, the screw rotation speed is controlled; according to the invention, the problems of measurement one-sidedness, control hysteresis and deviation accumulation are solved, and the continuous and stable control of the geometric parameters of the cable insulation layer is realized.

This application relates to a monolithically integrated multi-wavelength topological cavity surface-emitting laser (PCSEL) array. According to one embodiment, a monolithically integrated PCSEL array includes multiple PCSELs formed from the same semiconductor layer, at least one layer of which is formed as a photonic crystal layer, or the laser also includes a separate photonic crystal layer. The photonic crystal layer includes multiple supercell structures, each with substructures having multiple independent one-dimensional parameters. At least two independent one-dimensional parameters of one or more substructures are modulated to be greater than or less than their equilibrium position to open the Dirac point of the supercell's bandgap at the equilibrium position. Around any point in the photonic crystal layer, the modulation of the two independent one-dimensional parameters of the supercell forms a vortex structure, which corresponds in parameter space to one or more turns around the equilibrium position. The supercell lattice constants of the two lasers can be different to emit lasers of different wavelengths.

The invention provides an optical neural network computing system and method based on time domain excitation characteristics, and the system comprises a pulse clock sequence module which is used for generating a reference time sequence; the multi-channel pulse laser array is used for generating semiconductor neuron laser pulses with subnanosecond pulse width based on a reference time sequence; the time domain and wavelength division multiplexing module is used for simultaneously performing time domain coding and wavelength division multiplexing on the laser pulse based on a reference time sequence to generate a first optical signal; the reconfigurable weight matrix module is used for performing all-optical linear matrix operation and weight mapping on the first optical signal to obtain a second optical signal; the neuron activation module is used for performing nonlinear activation processing on the second optical signal based on an LIF theory to obtain an activated optical signal; and the output module is used for carrying out decoding and photoelectric conversion on the activated optical signal to obtain a network reasoning result.

A semiconductor laser includes a distributed feedback (DFB) region including an active layer and a uniform grating and two distributed Bragg reflector (DBR) region including an core layer and a uniform grating and optically coupled to respective ends of the DFB region and lengths of the DFB region and the DBR regions in a waveguide direction are set so that a photon-photon resonance frequency is in a range from 40 GHz to 50 GHz when an operating temperature is between 25 degrees and 75 degrees. The semiconductor laser optimizes a PPR effect and enables maximizing a modulation bandwidth.

The invention relates to a semiconductor laser arrangement with a laser-active material comprising layers of different semiconductor materials. A first and a second reflective element are arranged between the laser-active material, the second element being configured for extracting laser light from the laser-active material. According to the invention, at least one of the first and second elements has a layer stack with an electro-optic layer sequence. The electro-optic layer sequence comprises a first conductive and, in particular, transparent layer with a terminal; a second conductive and, in particular, transparent layer with a terminal; and an intermediate, in particular, insulating layer in which an optical parameter can be varied depending on a voltage between the first and the second layer.

This invention relates to the technical field of lidar, specifically providing a diffusion unit, a transmitting system, lidar, and a vehicle, aiming to solve the problem of the large number of laser emitters used in existing transmitting systems. To this end, the diffusion unit of this invention includes a lens group comprising multiple lenses arranged sequentially. The refractive index of each lens is greater than the refractive index of the medium surrounding the lens. The lenses can refract and reflect incident light, producing refracted and reflected light. From the first end to the second end of the lens group, refracted light emitted from one lens can enter the next lens and undergo refraction and reflection. Laser light enters from the first end, passes through multiple lenses for refraction and reflection, and the reflected light generated by the multiple lenses forms a linear laser array, thereby reducing the number of laser emitters used in the transmitting system employing this diffusion unit.

The invention provides a light field reverse design method and system based on a bicoherent array, and the method comprises the steps: determining a target structure light field, initializing the array parameters of a bicoherent laser array in staggered distribution, and building a physical forward model of the bicoherent laser array from an emission surface near-field light field to a far-field light field; constructing a first-stage loss function by taking the generated target structure light field as a guide, optimizing amplitude, phase and tilt parameters of all sub-beams through back propagation iteration until convergence, and outputting array parameters after first-stage optimization; and introducing a light beam position penalty term on the basis of the first-stage loss function to update the loss function so as to continuously iteratively optimize the array parameters until no light beams are overlapped, and driving the dual-coherent laser array to perform coherent combination by using the finally optimized array parameters to generate a target structure light field. According to the invention, multiple typical and specific attribute structured light fields can be accurately customized, far-field side lobes are effectively inhibited, and the mode quality and the energy utilization rate are improved.

The application discloses an independently replaceable space beam combining semiconductor laser array, which is used for solving the problems of high maintenance cost, high power loss and low space beam combining efficiency of a traditional semiconductor laser bar. The application comprises a carrier, N semiconductor lasers and N sets of beam shaping components which are arranged side by side and independently installed on the carrier. Each semiconductor laser comprises a positive electrode sheet, a semiconductor laser bar, a negative electrode sheet and an insulating pressing sheet which are connected in sequence from bottom to top. The positive electrode sheet is connected in series with the negative electrode sheet in the adjacent semiconductor laser. The light emitting end of each semiconductor laser bar is directed to the corresponding beam shaping component. The connecting end of each positive electrode sheet and negative electrode sheet is located at the back light end of the corresponding semiconductor laser bar. Each set of beam shaping components comprises a fast-axis collimator, a slow-axis collimator and a light path turning piece which are arranged in sequence along the light path. All the light path turning pieces are arranged in parallel, so that the space beam combining of the outgoing light of the semiconductor laser bar in the fast-axis direction is realized.

The application relates to the technical field of electric propulsion, in particular to a laser array hole forming method for a spherical carbon-carbon grid of an ion thruster, which comprises the following steps: step 1: fixing the spherical carbon-carbon grid on a laser processing workbench through a combined tool; step 2: scanning and fitting the spherical profile parameters of the carbon-carbon grid; step 3: carrying out fan-shaped partitioning on the spherical carbon-carbon grid, selecting one fan-shaped partitioning, and carrying out laser hole forming through a laser processing device; and step 4: rotating and arraying and splicing all information in the selected fan-shaped partitioning along an axial direction, and sequentially completing laser hole forming processing in the remaining fan-shaped partitionings. The application innovatively adopts the laser hole forming mode of fan-shaped partitioning and rotating arraying in combination with the special thin-walled curved multi-hole structure characteristics of the grid of the ion thruster and the carbon-carbon material characteristics, greatly simplifies the planning of the laser processing track, simultaneously, can eliminate the stepping error, and effectively guarantees the position precision of the grid holes.

This invention provides a photomask-based light projector, depth camera, and item picking system, comprising: a light source for projecting a linear laser array; a microlens array disposed on the light-emitting side of the light source for receiving the linear laser array and homogenizing it into a surface light; and a photomask, including a pre-set pattern structure disposed on the light-emitting side of the microlens array for receiving the surface light and projecting a structured light pattern according to the pattern structure. In this invention, a rotating mirror drives the rotation of multiple light-reflecting surfaces to reflect the linear laser projected by the light source onto the microlens array to form a linear laser array. The microlens array then homogenizes the linear laser array into a surface light, which is then projected into a structured light pattern through the photomask. This not only significantly improves the light projection power compared to VCSEL-based structured light technology but also provides a significantly denser light spot compared to galvanometer scanning devices, thereby improving the resolution of the depth camera.

The embodiment of the invention discloses a vehicle control method and device based on laser communication, equipment and a storage medium, belongs to the technical field of vehicle control, is applied between communication nodes including a vehicle-mounted terminal, and is characterized in that a wavelength division multiplexing-based multi-channel MIMO communication module is configured between the communication nodes, and the method comprises the following steps: obtaining driving information of an ith vehicle; determining decision information for the i-th vehicle based on the driving information; and sending related information of the decision information to two vehicles adjacent to the i-th vehicle in the motorcade through the laser array in the i-th vehicle. Communication is achieved through the multi-channel MIMO communication module, the problems of communication interruption and high time delay caused by electromagnetic interference, high-concurrency channel blocking and the like in communication can be effectively solved, the communication stability is improved, the time delay is reduced, stable links and low bit error rate can be kept in a complex traffic environment, and the communication efficiency is improved. Decision information of the vehicle is expressed to the adjacent vehicle in time, and consumption of hardware computing power is effectively reduced.

The invention provides an automatic coupling device for a fast-axis beam of a micro-channel laser stack array, and relates to the technical field of semiconductor lasers. The device comprises an optical platform, and the optical platform is provided with a stack array adjusting subassembly, a power-up subassembly, a UV curing subassembly, a lens adjusting subassembly, a dispensing subassembly, a near-field detection subassembly and a far-field detection subassembly. The stack array adjusting part is used for installing the stack array, and the power-up part is used for powering up the stack array. And the UV curing subassembly is used for curing the ultraviolet glue. And the lens adjusting subassembly and the dispensing subassembly are respectively used for adjusting the position of the fast axis collimating lens and dispensing. The SAC lens is arranged on a sliding plate of the dispensing subassembly through a fixing rod, during coupling, laser emitted by the micro-channel laser sequentially passes through the fast axis collimating lens and the SAC lens and then is divided into a far-field light beam and a near-field light beam by the beam splitter prism, the near-field light beam enters the near-field detection subassembly, and the far-field light beam enters the far-field detection subassembly. The device effectively solves the problems of low production efficiency, poor coupling precision and the like in the existing coupling mode.

This invention belongs to the field of high-power semiconductor laser array coupling technology, specifically providing an optical element dispensing and curing system and method based on dual-target monitoring. The system includes a multi-degree-of-freedom precision displacement platform, a vision inspection unit, a dispensing system, a dual-path photoelectric feedback module, and a central control unit. The dual-path photoelectric feedback module includes a beam splitting unit, an optical power detection unit, and a spot imaging detection unit. The beam splitting unit splits the laser beam into two paths, one of which is used for beam analysis to obtain the beam arrangement. The optical power detection unit receives the other beam from the beam splitting unit and provides real-time feedback of its optical power value. The spot imaging detection unit receives the reflected sampled beam. The central control unit integrates an industrial control computer and a motion control card. This invention designs a closed-loop hardware system including a beam splitting prism, dual detectors, and a multi-degree-of-freedom platform to solve the problem of low multi-degree-of-freedom coupling efficiency in existing technologies.

Apparatuses, methods, and systems for a modulated laser are disclosed. The modulated laser includes a substrate including a plurality of laser segments, a first laser segment comprising a DC electrode, a second laser segment comprising an AC electrode, an isolation barrier formed between the first laser segment and the second laser segment, and a modulated laser cavity spanning from a rear face to a front face of the modulated laser inclusive of the plurality of laser segments, wherein a primary injection current supporting stimulated emission at a desired optical output power out of the front face of the modulated laser is generated when a DC bias is applied to the DC electrode, and wherein a carrier signal of the modulated laser is modulated when an AC signal is applied to the AC electrode, wherein the AC bias is independent of the DC bias.

The utility model relates to a kind of semiconductor laser array packaging mechanisms, including linear array body and heat dissipation component, the linear array body is connected on the heat dissipation component, and insulating heat conduction layer is provided between the linear array body and the heat dissipation component;The heat dissipation component has water inlet, water outlet and water flow channel, the water inlet, the water flow channel and the water outlet are sequentially communicated, wherein, multiple first water retaining members and multiple second water retaining members are provided in the water flow channel, multiple the first water retaining members and multiple the second water retaining members are located at the opposite sides of the water flow channel respectively, and multiple the first water retaining members and multiple the second water retaining members are staggered along the direction of the water flow channel.Setting.The semiconductor laser array mechanism provided by the utility model avoids the blockage caused by complex structure, and has good heat dissipation effect.

This invention discloses a distributed optical switching and interconnect chip and system having multiple connected nodes, each node including an optical routing unit with one side having multiple internal input / output ports and the other side having multiple external input / output ports, a laser array and a photodetector array, connected to the internal input and output ports, respectively. The external output ports are connected to the external input ports of other nodes through optical waveguides. The signals received by the photodetectors can be dropped to the node or re-routed to the lasers by an electronic packet switching chip for re-transmission to other nodes. The invention integrates and encapsulates laser arrays, photodetector arrays, optical routing units and interconnection network in one chip. The distributed optical switching chip and system architecture have the advantages of high scalability, low latency and low power consumption, and can be used for multi-chip computing systems and datacenters.

The invention discloses a pulse modulation laser array chip based on a double-SOA structure, which relates to the technical field of photoelectronics and comprises a substrate, a semiconductor laser array chip, an active photon integrated chip and a photon lead waveguide structure, the semiconductor laser array chip and the active photon integrated chip are arranged on the substrate; the semiconductor laser array chip and the active photonic integrated chip are in coupling connection through a photonic lead waveguide structure, the active photonic integrated chip comprises an SOA wave combining chip or an SOA chip, and the semiconductor laser array chip comprises a first SOA structure. According to the invention, a double-SOA structure is used, the problem of light leakage in a common laser array is solved, a larger modulation range and extinction ratio are realized, combined wave emission of a plurality of laser arrays is realized, the number of laser channels is increased, and the wavelength tuning range is expanded.

The invention relates to the technical field of laser chip packaging, and provides a laser chip packaging structure, a packaging method and a laser array, the laser chip packaging structure mainly comprises an upper cover plate, a middle layer with a cavity and a lower cover plate which form a base structure together; the laser chip is fixed on the lower cover plate and is accommodated in the cavity of the middle layer. Through holes used for being filled with electrode materials are formed in the base, the positive electrode and the negative electrode of the laser chip are electrically connected with the corresponding through holes through surface metallization of the base, and therefore heat generated by the laser chip can be efficiently conducted to the outside through the upper surface and the lower surface of the laser chip at the same time. The heat dissipation effect of the junction temperature area of the laser is improved by increasing the heat conduction channels, and the performance and the service life of the laser are further improved.

The utility model relates to a laser array marking disc applied to the technical field of laser marking equipment, which realizes that after an expansion valve is placed in a corresponding limiting groove on the marking disc to be positioned, the marking disc is placed on a sliding block, the limiting block is clamped with a groove, and the marking disc is placed on the sliding block. Then an electric guide rail is started to drive a sliding block to move the marking disc to the position corresponding to the laser marking head in the machining bin for marking, after marking is finished, a second electric push rod can be started to push the marking disc upwards, and after the marking disc is pushed to the maximum extensible height of the second electric push rod, a distance sensor detects the marking disc at the moment, and the marking disc is driven to move to the machining bin. A signal is transmitted to a controller to start a first electric push rod to stretch, a clamping block is clamped with a clamping groove in the corresponding position, then a second electric push rod is contracted, at the moment, a servo motor can be started to drive a second rotating shaft, two first rotating shafts synchronously rotate through a belt pulley and a belt, and therefore the marking disc is turned over; and the marked expansion valves can be poured into the inner bin from the discharging opening to be collected.

The invention provides an integrated driving chip for rapid wavelength tuning of a semiconductor laser array and a driving method of the integrated driving chip, and relates to the field of semiconductor optoelectronic integrated circuits. The driving chip comprises a packaging body, and the packaging body comprises a VCC pin, a VSS pin, an SW pin, a DACin pin and an Iout pin, wherein the SW pin, the DACin pin and the Iout pin are respectively provided with eight paths of driving currents. The packaging body comprises a current size setting module which uses a DACin pin to input a level so as to set a laser driving current; the high-speed switch switching module is used for switching laser channels by using an SW pin; and the multi-stage current mirror amplification module is used for converting and amplifying the final driving current by utilizing a preceding-stage level, and outputting the final driving current by an Iout pin. The tunable laser has important significance in improving the tuning range of the tunable laser, increasing the number of channels, shortening the channel switching time and reducing the size and the cost of the tunable laser.

The invention provides a 360-degree annularly-packaged laser array, and relates to the technical field of optical devices, and the 360-degree annularly-packaged laser array is characterized in that a heat-conducting insulating base of a laser bar assembly is uniformly fixed on a cylindrical base, so that light spots of laser output by the laser array can completely cover a 360-degree area range around the laser array; therefore, a 360-degree dead-angle-free laser output effect in a plane is realized. Moreover, the laser array is simple in structure and low in manufacturing cost, and can be widely applied to various fields.

The application belongs to the technical field of laser detection, and specifically discloses a multi-component gas distributed laser detection system based on dynamic wavelength regulation, which comprises a plurality of lasers, a multi-channel optical switch matrix connected to the output ends of the lasers, optical fiber gas chamber detection units connected to each output channel of the multi-channel optical switch matrix through optical fibers, and corresponding optical detectors connected to the output ends of the optical fiber gas chamber detection units through optical fibers; a control module is electrically connected to the lasers, the optical switch matrix and the optical detectors, and is used for controlling the switching and light-emitting timing of the lasers, controlling the switching path of the optical switch matrix, and synchronously reading and processing the data of all the optical detectors to calculate the gas concentration. The application realizes the dynamic switching and scheduling of different laser wavelengths through the multi-channel optical switch matrix, supports the multi-component gas detection of multiple detection points with a single laser array, and realizes the passive deployment of the detection points by using the distributed optical fiber gas chamber detection units, thereby meeting the intrinsic safety detection requirements in flammable and explosive hazardous environments.

This invention belongs to the field of electronics and safety technology, and discloses a control method, device, equipment, and storage medium for a safe travel backpack. The invention acquires detection signals from a laser array radar at a preset detection frequency; analyzes the detection signals to obtain vehicle information within the detection range, including vehicle type, driving direction, and driving speed; determines the intention of the driving direction and speed to ascertain the danger level of the vehicle; generates a warning signal based on the danger level; and the safe travel backpack performs corresponding control actions based on the warning signal. By detecting surrounding vehicles through the laser array radar, the invention can determine the form and movement of surrounding vehicles, predict their driving trajectories, and assess whether danger will occur. If danger is imminent, the invention can proactively take appropriate actions to avoid it, thereby ensuring travel safety.

The invention provides an ultra-wide-band gain spectrum epitaxial material structure of a tunable laser and application of the ultra-wide-band gain spectrum epitaxial material structure. The epitaxial material structure comprises a substrate, a lower cladding, a waveguide layer, an upper limiting layer, an upper cladding and a contact layer which are sequentially arranged from bottom to top, the waveguide layer comprises an intrinsic waveguide layer and a bismuth compound quantum dot layer embedded in the intrinsic waveguide layer, and the gain bandwidth is widened through the energy band anti-cross effect instead of suppressing radiation recombination. The epitaxial material structure grows in a molecular beam epitaxy or metal organic vapor phase epitaxy mode, and the crystal quality is optimized in combination with a rapid thermal annealing process. By regulating and controlling the number of layers of the quantum dots and the bismuth component, the ultra-wideband gain spectrum coverage from near ultraviolet to near infrared bands is realized, the gain spectrum is wide, the gain peak value of the material is relatively high, and meanwhile, the material has a low linewidth enhancement factor and high temperature stability. The epitaxial material structure can be monolithically integrated in a DFB laser array and a semiconductor optical amplifier, and a core gain medium is provided for a high-performance tunable semiconductor laser.

The utility model provides a series-parallel connection structure of optical isolation driving semiconductor switches, which relates to the field of semiconductor switches and comprises a plurality of groups of optical isolation driving semiconductor switches and a plurality of series-parallel connection metal plates, and the series-parallel connection metal plates enable the optical isolation driving semiconductor switches in the same group to be connected in series. The series and parallel metal plates connect the plurality of groups of optical isolation driving semiconductor switches in parallel; the driving boards are connected through a plurality of driving board supporting columns, and each driving board comprises a driving module and a photoelectric conversion module; according to the scheme, the laser array module is driven by using the laser array as the light source of the optical isolation driving semiconductor switch, and the optical isolation driving semiconductor switch can be driven by using the received optical signal from the laser array module. Energy optical fibers and high-power lasers are not needed, the application cost of the optical isolation driving semiconductor switch is remarkably reduced, and the economical efficiency of the optical isolation driving semiconductor switch is further improved.

The application belongs to the technical field of cable manufacturing. An adaptive correction method and system based on cable insulation layer thickness monitoring are proposed. According to the spatiotemporally synchronized laser array measurement data, the real-time center offset of the cable is determined. According to the spatiotemporally synchronized X-ray thickness measurement data, the cable thickness is determined. According to the spatiotemporally synchronized shooting obtained cable ellipse contour image, the ellipse major and minor axis ratio is determined. The real-time center offset of the cable, the cable thickness and the ellipse major and minor axis ratio are input into the extended Kalman filter to obtain the fused thickness, the fused concentricity and the fused ellipticity, and then the extrusion die pose compensation vector and the screw speed correction amount are determined. The corresponding actuator is driven according to the extrusion die pose compensation vector to adjust the extrusion die pose, and the screw speed is controlled according to the screw speed correction amount. The application solves the problems of one-sidedness of measurement, hysteresis of control and accumulation of deviation, and realizes the continuous and stable control of the geometric parameters of the cable insulation layer.

The invention relates to a guide rail support spacing adjusting device and method for an elevator, and belongs to the technical field of elevator installation and maintenance, and the guide rail support spacing adjusting device comprises a measuring trolley climbing along a guide rail, a short-range laser sensor array driven by an actuator, a foresight distance sensor and a tilt angle sensor; laser, stroke and attitude data are synchronously collected during climbing; detecting the guide rail bracket by a foresight sensor; when the guide rail bracket is detected, recording an initial position and withdrawing the laser array; after crossing the bracket, recording a termination position and recovering the array; correcting the laser data according to the attitude data, and interpolating and reconstructing a guide rail contour of a support shielding area to generate an adjusting scheme; coevolution of measurement and avoidance is achieved, the existence of the foresight distance sensor provides a pre-judgment capability for a control algorithm, the avoidance action can be carried out actively in advance, and the method is a physical basis for achieving intellectualization of the algorithm.

The application belongs to the technical field of radio frequency switches and relates to an optical induction integrated phase change radio frequency switch, which comprises a plurality of lasers, a lens layer and a passive phase change radio frequency switch. The plurality of lasers are distributed at intervals in the same plane to form a laser array. The lens layer is arranged at intervals with the laser array and the passive phase change radio frequency switch respectively, so that the outgoing laser of the laser array is emitted into the passive phase change radio frequency switch after passing through the lens layer. The lens layer comprises a collimating lens and a focusing lens. The collimating lens is arranged between the laser array and the focusing lens, and the focusing lens is arranged between the collimating lens and the passive phase change radio frequency switch. The area of the outgoing light of the focusing lens is equal to the area of a phase change layer in the passive phase change radio frequency switch. The collimating lens and the focusing lens are both super surface lenses. The laser array, the collimating lens, the focusing lens and the passive phase change radio frequency switch are parallel to each other. The application can integrate the laser and the passive phase change radio frequency switch.

The invention discloses a silicon-based vertical cavity surface emitting laser array and a preparation method thereof, which can be applied to the field of semiconductor laser technology and the like. The laser array includes a silicon-based substrate and a functional layer. The upper surface of the silicon-based substrate is provided with N micro-pits which are uniformly distributed in an array, and the adjacent micro-pits are communicated with each other through a micro-groove; functional layers are arranged in the micro pits and the micro grooves, and the functional layers in the micro pits form VCSEL units; the lower surface of the silicon-based substrate is provided with micro-channels which are uniformly distributed in an array, and the centers of the micro-channels correspond to the centers of the micro-pits in the upper surface. By directly growing the laser unit in the micro-pit array, transverse expansion of heat of the laser unit is promoted. Near-junction efficient heat dissipation of each unit of the laser array is realized through rapid flow of the cooling working medium in the micro-channel on the second surface of the substrate.

The purpose of the present technology is to provide a video projection device capable of obtaining a satisfactory video (image) while achieving reduction in power consumption and reduction in size of the device. Provided is a video projection device including at least: a monolithic semiconductor laser array including multiple light emitting units, each of which emits a laser light beam; an optical waveguide that guides the laser light beam in a predetermined direction; a mirror that scans the laser light beam in two axes; and a diffractive element that diffracts the laser light beam in a specific direction in front of an eye and projects the laser light beam on a retina. The multiple light emitting units are respectively optically coupled to different input ports among multiple input ports included in the optical waveguide.