715 results about "Oxidation rate" patented technology

An apparatus, system, and method are disclosed for detecting and evaluating a filter regeneration event. The apparatus, in one embodiment, is configured to determine whether an oxidation rate of soot accumulated on a particulate filter has attained a level sufficient to indicate that a filter regeneration event is occurring. The apparatus may include an input module for receiving input relative to engine operating conditions and exhaust gas produced as a byproduct of engine operation, an oxidation module for communicating with the input module and for determining an oxidation rate of soot accumulated on a particulate filter from the input, and a regeneration detection module to determine whether a filter regeneration event is occurring. The apparatus may further categorize a detected filter regeneration event and to facilitate defining the actual condition of soot on a particulate filter.

A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer.

A semiconductor stack of a FinFET in fabrication includes a bulk silicon substrate, a selectively oxidizable sacrificial layer over the bulk substrate and an active silicon layer over the sacrificial layer. Fins are etched out of the stack of active layer, sacrificial layer and bulk silicon. A conformal oxide deposition is made to encapsulate the fins, for example, using a HARP deposition. Relying on the sacrificial layer having a comparatively much higher oxidation rate than the active layer or substrate, selective oxidization of the sacrificial layer is performed, for example, by annealing. The presence of the conformal oxide provides structural stability to the fins, and prevents fin tilting, during oxidation. Selective oxidation of the sacrificial layer provides electrical isolation of the top active silicon layer from the bulk silicon portion of the fin, resulting in an SOI-like structure. Further fabrication may then proceed to convert the active layer to the source, drain and channel of the FinFET. The oxidized sacrificial layer under the active channel prevents punch-through leakage in the final FinFET structure.

An apparatus, system, and method are disclosed for estimating particulate production from a diesel engine. Engine conditions such as fuel rate, exhaust gas recirculation, and fuel injection timing are determined. Based on empirical evidence or theoretical calculations, or both, particulate production markers, each indicating a level of particulate production, are assigned to each engine condition. The markers are combined and the combined marker is used to interpolate between a minimum and a maximum level of particulate production from the engine to estimate a particulate production rate. The production rate may be combined with an oxidation rate to determine a particulate accumulation rate, which may in turn be combined with a particulate load estimate to produce a combined particulate load estimate. The combined estimate may be used to determine whether to initiate regeneration of a diesel particulate filter.

The invention discloses a preparation method for fluororubber cladding nanometer aluminum powder composite particles. The preparation method comprises the following steps that the silane coupling agent with the mass being 5-15% that of nanometer aluminum powder is used for modifying the nanometer aluminum powder; fluororubber with the mass being 5-20% that of the modified nanometer aluminum powder is selected and used, a solvent-nonsolvent method is used for conveying cladding modifying on the nanometer aluminum powder modified by the coupling agent, nanometer aluminum powder/fluororubber composite particles are prepared, and the composite particles are of a core-shell structure; the cladding layer fluororubber can postpone the normal temperature oxidation of the nanometer aluminum powder, and the high temperature oxidation rate and heat release rate of the nanometer aluminum powder are significantly improved. The preparation method for the fluororubber cladding nanometer aluminum powder composite particles can effectively prevent the oxidation of the nanometer aluminum powder, keep the activity of the nanometer aluminum powder, overcome the influence of non-formula composition or inert composition cladding nanometer aluminum powder on the comprehensive performance of pyrotechnic composition and propellant, and improve the compatibility between the nanometer aluminum powder and pyrotechnic composition, propellant and the like.

The invention relates to a filter window for EUV lithography comprising a pellicle, a wire structure for supporting the pellicle, characterized in that the pellicle comprises a first layer comprising at least one of AlN, Ru, Ir, Au, SiN, Rh, C. A pellicle with these materials has a very low EUV absorption in combination with a minimal oxidation rate. In a particular embodiment, the thickness of the pellicle is between 30 nm and 100 nm. It can be easily checked that absorption of EUV radiation of such a thin pellicle is equal to known filter windows, i.e. about 50% at a wavelength of 13.5 nm wavelength, but the oxidation of the pellicle according to the invention is much smaller. The filter window can for example be used to separate a Projection Optics box and a wafer compartment of the apparatus or to shield a reticle from particle contamination.

When attempting to make a lithium ion-switching device such as a high-efficiency, all-solid state, thin film battery the choice of carrier substrate is all important. As such a substrate must withstand a high temperature under an oxidising atmosphere to crystallise certain layers making up the device, the substrate should not oxidise thereby ruling out most metals. The invention now describes a class of ternary alloys of which the oxidation rate is limited and that are useable to produce thin film batteries on. At least one element with a high affinity to oxygen (Al, Mg, Zn or Si) is present in the alloy. The other two metallic elements reduce the growth of the oxide of this first element. In addition the thus formed oxide scale turns out to be an effective barrier to lithium. Surprisingly, the scale shows nanoscopic voids that allow for sufficient electrical contact with the device layers, thereby eliminating the need for a separate current collector. As the ternary alloy can be made in a flexible foil, it can advantageously be used in a roll-to-roll process.

A semiconductor device includes a first semiconductor layer, an n-type/p-type second semiconductor layer, p-type/n-type third semiconductor layers and a first gate electrode. The second semiconductor layer is formed on the first semiconductor layer and has an oxidation rate which is lower than that of the first semiconductor layer. The third semiconductor layers are formed in the second semiconductor layer and have a depth reaching an inner part of the first semiconductor layer. In case that the second and third semiconductor layers are n-type and p-type, respectively, a lattice constant of the second semiconductor layer is less than that of the third semiconductor layer. In case that the second and third semiconductor layers are p-type and n-type, respectively, the lattice constant of the second semiconductor layer is greater than that of the third semiconductor layer. A first gate electrode is formed on the second semiconductor layer.

The invention discloses a preparation method of modified micron zero-valent iron and an application method of the modified micron zero-valent iron in remediation of heavy metal contaminated soil. The preparation method of the modified micron zero-valent iron comprises the steps of cleaning of iron raw materials, preparation of micro iron, ultrafine grinding and modifying treatment. A modifying agent composed of water, xanthan gum, sulfide, a stabilizing agent, zeolite and blast furnace slag is adopted in the step of modifying treatment. The preparation method of the modified micron zero-valent iron has the beneficial effects that the production process of the modified micron zero-valent iron is simple, and the effect similar or superior to micron zero-valent iron is achieved while the cost is reduced; and in addition, the reaction activity is controlled, the oxidation rate is decreased, excellent stability is obtained, and the acting time of the micron zero-valent iron is longer. By the adoption of the application method of the modified micron zero-valent iron, the remediation cost of heavy metal contaminated underground water is further reduced. According to the preparation method of the modified micron zero-valent iron and the application method of the modified micron zero-valent iron in remediation of heavy metal contaminated soil, organic fertilizer is added in the soil treatment process so that the fertility of soil can be improved, the structure of soil can be improved through humic acid produced by the organic fertilizer, heavy metal elements, such as lead, chromium and arsenic, in underground water can be removed, and the concentration of pollutants such as nitrate and perchlorate can be reduced.

The invention provides a converter vanadium-extracting method of molten iron containing vanadium. The converter vanadium-extracting method comprises the following steps of after the molten iron containing the vanadium enters a converter, adding 5-10kg/t Fe of pig iron; controlling the oxygen supplying intensity of an oxygen gun in the oxygen-blowing smelting stage to be 2.0-3.0m<3>/(min.tFe); at the non-oxygen-blowing smelting stage, introducing air with the flow being less than 0.002m<3>/(min.tFe) into the converter as bottom-blowing gas, introducing air with the flow being 0.1-0.5m<3>/(min.tFe) into the converter as the bottom-blowing gas at the time interval from starting of blowing to 1-1.5 minutes before the end of blowing in the oxygen-blowing smelting stage, and introducing inert gas into the converter as the bottom-blowing gas at the stage beyond the time interval in the oxygen-blowing stage; and adding a vanadium-extracting cooling agent into the converter at the time interval from starting of blowing to 3 minutes after smelting in the oxygen-blowing smelting stage so as to control the temperature of the molten iron in the converter to be lower than 1370 DEG C. The converter vanadium-extracting method provided by the invention has the advantages that the used amount (for example below 5-10kg/t Fe) of the cooling agent can be reduced, the oxidation rate of vanadium is increased (for example, more than 90%), and the purposes of utilizing the resources and reducing the vanadium-extracting cost are easily achieved.

Disclosed is An exercise guide apparatus comprising: a sensing unit configured to obtain a heart rate of a subject; a strength determining unit configured to determine a maximal oxygen uptake of the subject; an exercise intensity measurement unit configured to determine a current exercise intensity of the subject based on the heart rate obtained by the sensing unit; and an exercise guide unit configured to estimate a fat oxidation rate of the subject, determine whether or not fat oxidation of the subject occurs, generate guide information according to a result of the determination of the occurrence of fat oxidation, and display the guide information generated, wherein the fat oxidation rate is estimated based on a ratio of fat being oxidized at the current exercise intensity to the maximal oxygen uptake, and wherein the occurrence of fat oxidation is determined by checking whether or not the fat oxidation rate estimated is greater than a threshold.

An apparatus, system, and method are disclosed for robustly estimating soot oxidation rates on a particulate filter. The invention uses empirically measured soot consumption rates as defined boundary rates, and operates between those rates using theoretical relationships between soot consumption and various operating conditions. The invention may also operate outside the defined boundaries by extrapolating the theoretical relationships beyond the defined boundary. The invention thereby overcomes the inflexibility of empirical modeling by allowing reasonable estimates at points that are not explicitly measured, and it overcomes the sensitivity of theoretical models to non-idealities that are experienced in real applications.

The invention relates to a method for removing organic pollutants in water at an ultrahigh speed. The method comprises the following steps: firstly, adding a reducing agent to water to be treated; secondly, adjusting the pH value of the water to be treated to be within the range of 3-7; thirdly, adding an oxidizing agent to the water to be treated. According to the method, bisulfite radicals are utilized for reacting with potassium permanganate or manganese dioxide, the removal of the organic pollutants in the water at the ultrahigh speed is realized by quickly generating a highly active oxidizing agent Mn(III) (at a non-complexing state), the rate of removing the pollutants by potassium permanganate and manganese dioxide can be improved by one thousand to one million times and is ten thousand times higher than the apparent oxidation rate of a general advanced oxidation technology, and the degradation for the pollutants can be completed in ten seconds or several seconds. According to the method, the pollutants incapable of being oxidized by potassium permanganate and manganese dioxide can also be oxidized, and even nitrobenzene capable of being oxidized by hydroxyl radicals only in traditional meanings can be oxidized, so that the oxidizing capacity of potassium permanganate and manganese dioxide is greatly improved, and the application range of potassium permanganate and manganese dioxide is expanded.

A non-carbon, metal-based slow-consumable anode of a cell for the electrowinning of aluminium self-forms during normal electrolysis an electrochemically-active oxide-based surface layer (20). The rate of formation (35) of the layer (20) is substantially equal to its rate of dissolution (30) at the surface layer/electrolyte interface (25) thereby maintaining its thickness substantially constant, forming a limited barrier controlling the oxidation rate (35). The anode (10) usually comprises an alloy of iron with at least one of nickel, copper, cobalt or zinc which during use forms an oxide surface layer (20) mainly containing ferrite.

The invention relates to a mercaptan removal and lye regeneration device and a method for gasoline light fractions. The mercaptan removal and lye regeneration device for gasoline light fractions comprises a static mixer, a liquid film alkaline wash reactor, a lye coalescence remover, a lye oxidation separation tower and a liquid film extraction contactor. The mercaptan removal and lye regeneration device and the method for gasoline light fractions have the advantages that pre-alkaline washing is used for removing hydrogen sulfide and phenol, so that the investment is low; the two-stage liquid film alkaline wash reactor and the alkaline wash process are utilized, so that the mercaptan in products can be guaranteed to be below 10 parts per million (ppm), no free lye is carried, and the copper sheet corrosion and water-solutbility acid base detection can be guaranteed to be qualified with no water wash needed; the oxidation rate of mercaptan sodium in the lye is high, two-phase perturbation emulsification is quite slight, and more than 60% of generated disulphide can be separated and recycled; the content of the disulphide in the regenerated lye can be guaranteed to be no more than 100 ppm, and the regenerated lye cannot be re-extracted into products when used for removing mercaptan in a circulation mode; the total sulfur in products can be guaranteed to be stable and not rise without replacing the lye frequently, and compared with other processes, the discharge amount of alkaline residues is reduced by more than 50%.

This specification relates to a process for manufacturing a semiconductor device, comprising the steps of: forming a lower gate electrode film on a semiconductor substrate 10 via a gate insulating film 11; forming an upper gate electrode film on the lower gate electrode film, the upper gate electrode film being made of a material having a lower oxidation rate than that of the lower gate electrode film; forming a gate electrode 12 by patterning the upper gate electrode film and the lower gate electrode film, the gate electrode 12 comprising a lower gate electrode element 12a and an upper gate electrode element 12b; forming source/drain regions 15 by introducing an impurity into the semiconductor substrate 10; and forming oxide film sidewalls 13 by oxidizing the side faces of the lower gate electrode element 12a and the upper gate electrode element 12b, the thickness of the oxide film sidewalls 13 in the gate length direction being larger at the sides of the lower gate electrode element 12a than at the sides of the upper gate electrode element 12b.

A wet flue gas desulfurization and demercuration process and a system thereof based on two-stage oxidizing reaction. The process does two-stage oxidizing treatment to the simple substance HgO in flue gas utilizing to ultraviolet radiation and oxidant of halogen series, transmutes the gas phase divalent ion Hg2+ therein to liquid phase divalent ion Hg2+ using the modified limestone-gesso wet desulfurization process, and then transmutes the liquid phase divalent ion Hg2+ to the stable mercuric sulfide-HgS deposition via stabilizer of liquid phase divalent ion Hg2+. The system comprises desulfurization and demercuration equipments such as an ultraviolet irradiator, an electrical precipitator, an oxidant spraying unit and a reaction absorber etc, gesso treatment equipments of desulfurization byproduct, and a treating equipment for mercuric sulfide-HgS deposition. The process and the system thereof can raise the oxidation rate of simple substance Hg in the flue gas effectively, and at the same time effectively overcome the reduction release of divalent ion Hg2+ to avoid secondary pollution and be capable of raise desulfurization and demercuration efficiency of limestone-gesso wet desulfurization system.

The invention relates to a wet ammonia flue gas purification process for the combined sulfur and mercury removing and the system thereof. The process adopts chlorine gas as oxidizing agent to completely oxidize elemental mercury in the flue gas, and gas phase divalent mercuric ion after being oxidized is converted into liquid phase divalent mercuric ion through the improved wet ammonia desulphurization process, and further the liquid phase divalent mercuric ion is converted into stable mercuric sulfide sendimentation through liquid phase divalent mercuric ion stabilizing agent. The system comprises a flue gas oxidizing demercuration preprocessing system composed of an oxidizing agent injection device and an electrostatic precipitator, a wet ammonia flue gas sulfur and mercury removing system composed of a reaction absorbing tower, a sulfur removing accessory substance processing system composed of a cyclone cleaner, a dewaterer, and a dryer, and a mercuric sulfide HgS sendimentation processing system composed of a wastewater buffer pool, a liquid phase mercuric ion reaction chamber, and a settling pond. The process and the system can effectively improve the oxidation rate of the elemental mercury in the flue gas, overcome the defaults that the divalent mercuric ion is easy to be reduced and released and the secondary pollution problem is caused by excess oxidizing agent, and greatly improve the efficiency of sulfur removing and mercury removing.

The invention discloses a modifying method for catalyst activity in a power plant SCR (selective catalytic reduction) system, which comprises three major steps: firstly, sampling catalyst when in maintenance outage, and carrying out activity detection in a laboratory so as to obtain apparent activity value; secondly, carrying out a SCR denitration system spot performance test when the operation is recovered after the maintenance outage, so as to obtain operation indexes of the denitration system, such as denitration efficiency, ammonia escape rate, oxidation rate of sulfur dioxide, the resistance of the denitration system and the like; and finally, substituting the activity detection value obtained in the laboratory into a performance calculating module of an reactor as a relative proportion of the activity of all layers of catalyst, and utilizing the spot performance test data for regression so as to obtain the real activity of the current catalyst. The modifying method of the invention aims at modifying the error in the laboratory activity detection due to sampling representative problems and over ideal reaction conditions, so as to improve the accuracy of the catalyst activity detection.