3772 results about "Dielectric" patented technology

The invention discloses an automatic control method and system for secondary granulation of a high-voltage zinc oxide resistor disc, relates to the technical field of intelligent manufacturing of power equipment, and solves the problems of out-of-control particle morphology caused by dynamic coupling parameter identification lag and control instability caused by multi-physical field parameter coupling in an existing method. According to the invention, a dynamic physical property parameter matrix is generated in real time based on multi-band dielectric relaxation spectrum analysis and terahertz wave tomography; predicting a fluidized phase change threshold value and an energy gathering area through multi-physics field coupling modeling; a time sequence attention deep reinforcement learning algorithm is adopted to generate a multi-field cooperative adjustment instruction; positioning a parameter conflict source and triggering decoupling compensation by combining a high-frequency vibration and acoustic emission combined monitoring module; performing closed-loop correction on the control network weight based on the laser spectrum data and a partial least squares regression model; the real-time performance of fluidization parameter identification, the stability of multi-field coupling control and the recovery efficiency of abnormal working conditions are remarkably improved, and meanwhile the batch consistency of the electrical performance of the resistor discs is guaranteed.

A non-invasive liquid integrity monitoring system using dielectric fingerprinting and machine learning to detect and identify contamination in sealed containers is described. The system may employ externally-mounted sensors that measure dielectric properties through electromagnetic interrogation, comparing measurements against baseline signatures to detect deviations indicating contamination, tampering, or degradation. Industry-specific ML models enable identification of specific contaminants with confidence, providing alerts without breaching container integrity.

The invention discloses a multi-parameter coupling intelligent regulation and control method and system in a vanadium ore smelting process, relates to the technical field of non-ferrous metal smelting automatic control, and solves the problems of feeding deviation and resource chain scission caused by slow response of an existing heat balance model to ore impurity fluctuation, online sensing lag and process island. The impurity concentration and the dielectric constant are obtained in real time through an LIBS / XRF combined probe and a microwave dielectric spectrum, rheological disturbance is dynamically corrected through extended Kalman filtering, a dynamic coupling response model is input, a thermodynamic interference factor is calculated, and a leaching and precipitation strategy is generated; performing mother liquor tail gas material flow collaborative optimization in parallel, constructing a multi-dimensional control vector U, performing iterative updating through near-end strategy optimization in a digital twin and issuing the multi-dimensional control vector U to an edge PLC (Programmable Logic Controller) in a distributed manner, and finally correcting a model weight through online XRD (X-Ray Diffraction) feedback; according to the method, the adaptive capacity to complex vanadium ore component disturbance, the response precision of online control and the inter-process resource circulation efficiency are remarkably improved.

The invention provides a road underground disease detection model based on medium inversion and deep learning. A generation method of the model comprises the following steps: 1) collecting road underground radar data by using a ground penetrating radar; 2) obtaining the distribution condition of the underground dielectric constant corresponding to the B-Scan, and constructing a B-Scan-dielectric constant distribution data set; 3) constructing a deep learning medium dielectric property inversion model, and performing training by optimizing a comprehensive loss function; 4) utilizing the trained dielectric dielectric property inversion model to perform inversion on the actually measured radar map to generate an underground dielectric property distribution map; 5) performing disease classification marking according to the underground dielectric property distribution diagram, and constructing and training a disease target identification model; and 6) inputting the to-be-detected dielectric property distribution data into the disease target identification model, and outputting a prediction result of the underground hidden disease. Compared with the prior art, the method provided by the invention can realize accurate disease identification and positioning under complex underground medium distribution, and has better accuracy advantage and stronger generalization ability.

A non-invasive liquid integrity monitoring system using dielectric fingerprinting and machine learning to detect and identify contamination in sealed containers is described. The system may employ externally-mounted sensors that measure dielectric properties through electromagnetic interrogation, comparing measurements against baseline signatures to detect deviations indicating contamination, tampering, or degradation. Industry-specific ML models enable identification of specific contaminants with confidence, providing alerts without breaching container integrity.

The invention belongs to the technical field of radar wave-absorbing materials, and discloses a double-sided wave-absorbing broadband stealth composite material and a preparation method thereof. The broadband stealth composite material with the double-sided wave absorbing function comprises a non-metal-based composite material body and at least five metamaterial layers arranged in the thickness direction of the non-metal-based composite material body at intervals. The number of the metamaterial layers is an odd number, a middle metamaterial layer is arranged in the middle of the metamaterial layers in the thickness direction, and the rest metamaterial layers are symmetrically distributed on the two sides of the middle metamaterial layer; the metamaterial layer comprises conductive pattern units which are periodically arranged; the relative dielectric constant of the nonmetal-based composite material body is not greater than 10; the double-sided wave-absorbing broadband stealth composite material does not contain a metal reflecting layer. When electromagnetic waves with the frequency of 1-18 GHz vertically enter the material, the transmissivity of the material is small (smaller than-13 dB, namely smaller than 5%), and meanwhile the material has low reflectivity in a broadband. And the preparation method is simple to operate and easy to realize large-scale production.

The invention provides a drill hole joint detection method and system capable of reducing the number of advance drill holes in a tunnel roadway, and relates to the field of roadway engineering detection, and the method comprises the steps: obtaining the depth of a measurement point and the radar data and transient electromagnetic data of a target region, and enabling the radar data and the transient electromagnetic data to be collected through an integrated detection device in a drill hole; performing feature extraction on the radar data and the transient electromagnetic data, and fusing the extracted features based on contribution weights of the radar and the transient electromagnetism to obtain a fused feature vector; based on the depth of the measuring point and the fused feature vector, utilizing the trained physical information neural network to invert the dielectric constant and the resistivity; according to the dielectric constant and the resistivity, the geological anomalous body of the target area is identified; according to the invention, the drilling radar and the drilling transient electromagnetism are combined, so that the number of advanced drilling holes is reduced, the detection cost is reduced, and the full-area coverage of the forepoling of the roadway is ensured.

The invention relates to the technical field of capacitor films. The invention discloses a preparation process of a multilayer polypropylene capacitance film, which comprises the following steps: S1, raw material preparation: preparing basic resin, a nano ceramic filler, a nucleating agent and an antioxidant into multilayer raw materials respectively; s2, fusing multiple layers of raw materials by an independent screw extruder, and compounding by a co-extrusion die head to form a film blank; and S3, carrying out air ring gradient cooling on the film blank. And S4, longitudinally and transversely stretching the film blank. And S5, performing heat setting in a segmented heating furnace, and performing corona treatment to improve surface energy. And S6, segmentally curing the moisture-proof coating by using an infrared oven. The multilayer heterostructure is adopted, the comprehensive performance of the capacitor film is improved through material matching, the dielectric constant, the breakdown strength and the moisture resistance are enhanced, and the problem of considering the dielectric property and the mechanical property is solved. The innovative process guarantees stable performance, is compatible with an existing production line, can realize large-scale production, meets the requirements of fields such as new energy and the like, and provides a feasible scheme for localization of high-performance capacitor films.

The invention belongs to the technical field of superconducting wires, and relates to a niobium-tin composite superconducting wire and a preparation method thereof. The invention provides a Nb3Sn composite superconducting wire. The Nb3Sn composite superconducting wire sequentially comprises an Nb3Sn superconducting wire core, a barrier layer, a stable layer, a transition layer, a substrate layer and a functional layer from inside to outside, the transition layer is formed by mixing copper and a dielectric polymer, and the copper content is continuously decreased in a gradient manner from inside to outside; the substrate layer is the dielectric polymer; the functional layer is a plurality of protruding metal microstructures. According to the invention, the functional layer with the broadband electromagnetic stealth function is integrated on the basis of the Nb3Sn superconducting wire rod, so that the radar cross section is obviously reduced while the Nb3Sn superconducting wire rod bears high-density superconducting current and generates a strong magnetic field, and the technical problem that a high-field superconducting magnet system is easy to detect in an electromagnetic environment is solved.

A hybrid antenna substrate of an embodiment comprises: a core part including a core layer and a core wiring layer laminated in the vertical direction; and an antenna part disposed on the core part, wherein: the antenna part comprises a plurality of antenna wiring layers successively laminated on the core part and antenna insulating layers disposed between the plurality of antenna wiring layers; and the core layer has a greater dielectric constant than the antenna insulating layers.

A surface acoustic wave resonator comprises a multi-layer piezoelectric substrate including a carrier substrate, a layer of a first dielectric material disposed on the carrier substrate, and a layer of piezoelectric material disposed on the layer of the first dielectric material, interdigital transducer electrodes disposed on the layer of piezoelectric material and including interleaved electrode fingers, and a layer of a second dielectric material disposed on a central interleaved region of the interleaved electrode fingers, gap regions of the interdigital transducer electrodes being either free of the layer of the second dielectric material or having a thinner layer of the second dielectric material than the central interleaved region to reduce spurious signals in an admittance curve of the surface acoustic wave resonator.

In an embodiment, a device includes: a first nanostructure; a source / drain region adjoining a first channel region of the first nanostructure, the source / drain region including: a main layer; and a first liner layer between the main layer and the first nanostructure, a carbon concentration of the first liner layer being greater than a carbon concentration of the main layer; an inter-layer dielectric on the source / drain region; and a contact extending through the inter-layer dielectric, the contact connected to the main layer, the contact spaced apart from the first liner layer.

The invention provides a DCIM-based method for rapidly calculating a green function of a uniaxial anisotropic layered medium and an electromagnetic simulation system. The method comprises the following steps: modeling a uniaxial anisotropic layered medium to be simulated; determining a uniaxial anisotropic dielectric material of each layer, and assigning transverse parameters and longitudinal parameters; determining longitudinal coordinates of field point and source point distribution required to be solved, fitting a uniaxial anisotropic medium Green function spectral domain expression under the field source distribution by using a DCIM method, and solving an analytical expression in a spatial domain by using Somerfeld identical equation properties; solving the size of the electromagnetic field on the plane according to the fitted analytical expression; compared with a direct numerical integration method or a finite element method numerical solution using the Green function, the method has the advantages that the airspace analytical expression corresponding to the field source distributed on the plane is directly fitted, so that the solution of the airspace Green function is greatly accelerated, and the calculation efficiency and the calculation precision are both good in an actual example.

A microelectronic device including an isolation device with a stabilized dielectric. The isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The dielectric sidewall of the inorganic dielectric plateau is stabilized in a nitrogen containing plasma which forms a SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau. The SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau reduces ingress of moisture into the dielectric stack of the inorganic dielectric plateau.

The invention discloses a method for predicting long-term creep of cement paste based on dielectric constants, which comprises the following steps of: finding out a relationship between a dielectric constant real part and a long-term creep modulus of the cement paste, firstly measuring the dielectric constant real part and the creep modulus, fitting to construct a corresponding function relational expression, verifying the constructed function expression, and finally predicting the long-term creep of the cement paste based on the dielectric constants. After the accuracy is verified, the method is applied to the long-term creep prediction of the cement paste. According to the method, the function relational expression related to the dielectric constant real part and the long-term creep modulus of the cement paste is established, the function relational expression can accurately predict the long-term creep of the cement paste, the corresponding creep modulus is obtained, and the precision of the prediction result can effectively meet the construction requirement; the whole prediction process is simple and easy to operate, the prediction precision of the long-term creep of the cement paste is greatly improved, the creep deformation of a stressed component of a building structure in a long-term stressed state can be controllably monitored, and then safe operation of an engineering structure is guaranteed.

A semiconductor structure, a system, and a method of forming a stacked transistor structure with a gate-all-around (GAA) transistor and a forksheet / dielectric bar. The semiconductor structure may include a set of stacked transistors. The set of stacked transistors may include a first transistor, where the first transistor includes a first gate having a gate-all-around (GAA) structure. The set of stacked transistors may also include a second transistor, where the second transistor has a gate structure different than a GAA structure. The set of stacked transistors may also include a dielectric bar. The system may include a semiconductor structure. The method may include forming a set of stacked nanosheets. The method may also include forming a dielectric bar. The method may also include selectively recessing the second layer of the dielectric bar. The method may also include depositing a first gate. The method may also include depositing a second gate.

A capacitor that is capable of exhibiting good electrical properties under a wide variety of different conditions is provided. The capacitor contains a capacitor element that includes a sintered porous anode body, a dielectric that overlies the anode body, and a solid electrolyte that overlies the dielectric and includes a conductive polymer. The capacitor also contains multiple exposed anode lead portions that are electrically connected to respective anode terminations and a planar cathode termination that is electrically connected to the solid electrolyte.

Embodiments of the present disclosure are directed to processing methods and resulting structures for providing direct backside contact integrations with thick silicon layers to enable passive device and tight active region of NFET-to-active region of PFET (N2P) spacing. In a non-limiting embodiment, a method includes forming a backside contact electrically coupled to a first source or drain (S / D) region. The backside contact includes an upper portion and a lower portion. The lower portion has a larger critical dimension than the upper portion. A frontside contact is electrically coupled to a second S / D region and a backside contact dielectric liner conformally wraps around the upper portion and the lower portion of the backside contact.

The invention relates to the technical field of mask cloth, in particular to electret mask cloth and a preparation method thereof. The electret mask cloth provided by the invention comprises a mask cloth base material and an electret additive positioned on the surface of the mask cloth base material and in a network structure, the electret auxiliary agent comprises a nano dielectric material; the electret mask cloth is provided with static charges, and the electret mask cloth is dry mask cloth. The electret additive is loaded in the mask cloth base material to construct a mixed dielectric-polymer dipole complex, and charge storage and controlled instantaneous discharge are remarkably enhanced, so that pores are stimulated to open, and essence is driven to permeate more efficiently.

A skip-level through-silicon via structure is provided that enables low resistance via connection for backside power distribution by skipping one or more intermediate backside metal layers. The skip-level through-silicon via structure can enable a greater design flexibility for power grid. The skip-level through-silicon via structure has a large size that provides lower through-silicon via resistance as compared with conventional through-silicon via structures.

The invention discloses a semiconductor structure, a semiconductor device and a preparation method of a semiconductor, and the semiconductor structure comprises a wafer which is divided into a plurality of semiconductor chip regions and a cutting channel region located between two adjacent semiconductor chips; the closed ring structure is arranged between the chip area and the cutting channel area; the cutting channel region is fully paved with the metal cushion layer, and the metal cushion layer is located on the side, close to the wafer, of the cutting channel region; and the pseudo-closed ring structure fills the cutting channel region and is arranged on the metal cushion layer. The low dielectric material or the silicon oxide material in the cutting channel region is divided into a plurality of small blocks by the metal cushion layer and the pseudo closed ring structure, so that the chip and the closed ring structure can be effectively prevented from being damaged in the wafer cutting process.

The invention relates to the technical field of radiator monitoring, and particularly discloses a radiator heat dissipation performance dynamic test system, which is characterized in that a heat source simulation body is arranged on a heat transfer interface of a radiator, and a high-fidelity dynamic electric power load is applied to the heat source simulation body to simulate an actual working condition; radiating a microwave detection signal to a space where the heat source simulator is located and receiving a multi-path scattering response signal; the three-dimensional dielectric constant dynamic distribution of the heat source simulation body is reconstructed by solving the inverse scattering problem fused with the space-time constraint; according to the material dielectric constant-temperature relation mapping, three-dimensional temperature field dynamic distribution is generated; and finally, intelligently identifying and extracting a migration track and a temperature change curve of the highest temperature point in the space from the continuous time sequence temperature field data, and taking the migration track and the temperature change curve as a direct evaluation basis for the dynamic heat dissipation performance of the radiator. According to the method, lossless, full-field, real-time visualization and quantitative analysis of the migration process of the dynamic hot spots in the hidden heat source are realized, and the authenticity of the dynamic heat test is improved.

The invention relates to the technical field of data processing, and discloses a cable joint arc multi-physical field simulation method and system. The method comprises the following steps: establishing a defect-containing geometric model, judging according to a temperature gradient change rate and a current rising rate to obtain an adaptive time step length, and carrying out bidirectional coupling iteration on an arc temperature field and a material dielectric parameter based on the time step length to obtain an accumulated damage factor; arranging a virtual temperature detection point to convert the simulation temperature field into a virtual monitoring signal, extracting temperature characteristic parameters and ultrasonic spectrum characteristic parameters, and projecting the temperature characteristic parameters and the ultrasonic spectrum characteristic parameters to a two-dimensional characteristic space to obtain a fault mode fingerprint spectrum. According to the method, adaptive adjustment of the time step length is realized by establishing an arc evolution phase discrimination mechanism, and the problems of low calculation efficiency and insufficient transient characteristic capture caused by a fixed time step length are solved.

A shield connector is provided with an inner conductor, a dielectric for accommodating the inner conductor, and an outer conductor for surrounding the dielectric. The dielectric includes a stopper portion for stopping a movement of the dielectric along a wall surface of the outer conductor by abutting on the outer conductor. A displacement of the dielectric with respect to the outer conductor can be prevented by the abutment of the stopper portion on the outer conductor.

The invention relates to the technical field of special cables, in particular to an anti-electromagnetic interference double-shielding signal cable for precise instruments, which comprises conductor units, insulating layers, wire pair shielding layers, a filling buffer layer, a self-adaptive conductive layer, an inner main shielding layer, a bonding layer, an outer main shielding layer and a sheath layer, through combination of the graphene composite conductor and the low-dielectric insulating layer, 10GHz signal attenuation is smaller than or equal to 0.5 dB / m, signal transmission errors are greatly reduced, through cooperation of the 3D braided shielding layer and the filling buffer structure, the bending fatigue life of the signal cable is larger than or equal to 200,000 times, through self-repairing design of the liquid metal microcapsules, the shielding effectiveness of a damaged part is recovered, and the service life of the signal cable is prolonged. Protrusions are arranged on the inner layer, form mechanical occlusion with a microscopic rough surface of a copper foil composite layer on the inner main shielding layer, and are matched with a plurality of pits in the surface of the outer layer to form point-surface composite contact with a 3D woven silver-plated copper wire layer of the outer main shielding layer, so that the peel strength of the inner main shielding layer and the outer main shielding layer is greatly improved.

An appliance immersion tank system comprising: a generally rectangular tank adapted to immerse in a dielectric fluid a plurality of appliances, each in a respective appliance slot distributed vertically along, and extending transverse to, the long axis of the tank; a primary circulation facility adapted to circulate the dielectric fluid through the tank; a secondary fluid circulation facility adapted to extract heat from the dielectric fluid circulating in the primary circulation facility, and to dissipate to the environment the heat so extracted; and a control facility adapted to coordinate the operation of the primary and secondary fluid circulation facilities as a function of the temperature of the dielectric fluid in the tank. A plenum, positioned adjacent the bottom of the tank, is adapted to dispense the dielectric fluid substantially uniformly upwardly through each appliance slot. A weir, integrated horizontally into a long wall of the tank, is adapted to facilitate substantially uniform recovery of the dielectric fluid flowing through each appliance slot. All active and most passive components of both the primary and secondary fluid circulation facilities, and the control facility are fully redundant, and are adapted automatically to operate in a fail-soft mode.

The invention relates to a cable aging section state evaluation method and device, computer equipment, a computer readable storage medium and a computer program product. The method comprises the following steps: acquiring impedance spectrum data of a to-be-detected cable; dividing the to-be-tested cable into a plurality of initial aging sections according to the impedance spectrum data, and determining a complex dielectric constant of each initial aging section; constructing a target function according to the impedance spectrum data and the complex dielectric constants, and performing fitting calculation on the complex dielectric constants according to the target function to obtain a target complex dielectric constant; and correcting the section length of each initial aging section according to the target complex dielectric constant to obtain a target aging section. By adopting the method, the specific aging condition of the cable can be accurately evaluated.

A head-mounted device may have lenses. A user may view images through the lenses from eye boxes. The lenses may be tunable liquid lenses. Each lens may have a lens chamber. The lens chamber of the lens may have rigid and / or flexible walls that form optical lens surfaces. Actuators and / or pump and reservoir systems may deform the lens surfaces in response to control signals from a control circuit to tune the lens. Each liquid lens may have oil or other liquid in the lens chamber for that lens. Inorganic dielectric particles or other refractive-index-adjustment particles may be used to adjust the refractive index of the lens. The particles may be subwavelength in size.

The invention provides a 915 MHz MPCVD device for 16-inch diamond wafer deposition, and relates to the technical field of microwave plasma chemical vapor deposition. The device comprises a shell, a cavity is formed in the shell, a microwave inlet is formed in the top of the shell, a coaxial antenna is installed in the cavity of the shell, an air inlet is formed in the coaxial antenna, an air outlet and a substrate are arranged at the bottom of the shell, and the air inlet and the air outlet are communicated with the cavity; and a plurality of microwave medium windows are arranged on the inner wall of the shell. The microwave dielectric windows are arranged, the length and the phase of a microwave transmission path are changed, the two microwave electric field areas are connected into a whole, the plasma is excited, and the formed plasma area is located on the substrate. According to the device, a continuous TM02 microwave electric field with the diameter of 16 inches is generated on a substrate through the design of the structure of the resonant cavity and the shape and position of a microwave medium, a large-size plasma area is excited, and 16-inch diamond wafer deposition is achieved.

The invention provides a solid electrolyte membrane, a preparation method thereof and a solid-state battery. The solid electrolyte membrane comprises an inorganic filler, a polymer matrix and a lithium salt, wherein the inorganic filler comprises a dielectric conductive ion material and oxide particles; wherein the dielectric conductive ion material comprises a dielectric filler and a silane coupling agent which is coated on the outer surface of the dielectric filler and contains cyano groups, the dielectric filler contains transition metal elements, and the transition metal elements are Nb elements and / or Ta elements; the oxide particles comprise lanthanum oxide particles; the mass ratio of the dielectric conductive ion material to the oxide particles is (1-5): 1, and the ratio of the total mass of the inorganic filler to the mass of the polymer matrix is (10-50): 100. The solid electrolyte membrane provided by the invention has relatively high ionic conductivity, mechanical strength and structural stability, and can effectively improve the comprehensive performance of the solid lithium metal battery.