A phase-change integrated heat dissipation module for achieving asynchronous temperature uniformity of GaN, GaAs, and Si-based chips in a TR (Transient
Transformer) module is disclosed. This module comprises a phase-change end cap, a high
thermal conductivity core material, high
thermal conductivity clamps, a side cover, and a phase-change cavity. The module is divided into a cold end and a hot end, with the phase-change cavity running through both ends. A high
thermal conductivity core material is positioned at the center of the phase-change cavity, which is filled with a phase-change material with high volume
enthalpy change to act as a
heat sink. A high thermal
conductivity clamp is positioned in the middle of the high thermal
conductivity core material, allowing the central temperature to spread outwards, and heat to be conducted along the thickness direction, resulting in synchronous temperature uniformity across the top and bottom surfaces. The TR module is integrally mounted on the heat dissipation module. The high thermal
conductivity core material with its clamps helps to evenly distribute the temperature of the GaN, GaAs, and Si-based chips within the TR module. Simultaneously, the phase-change material directly beneath the Si-based
chip rapidly absorbs heat, reducing its temperature, lowering
power consumption, and effectively protecting
chip lifespan.