542 results about "Borosilicate glass" patented technology

The present invention provides a preparation method for a selective emitter, a solar cell and a preparation method therefor, and a photovoltaic module. The preparation method for a selective emitter comprises the following steps: (1) cleaning an N-type silicon wafer; (2) performing boron diffusion on the silicon wafer, and forming a P layer on the surface of the silicon wafer; (3) using laser to dope a gate line area of the silicon wafer; (4) cleaning to remove a borosilicate glass layer and the P layer on the surface of the silicon wafer; and (5) performing high-temperature treatment on the silicon wafer, forming a selective emitter on one surface of the silicon wafer, and forming a tunneling layer on the other surface of the silicon wafer. According to the preparation method provided by the present invention, by means of one-step oxidation, the selective emitter is formed on one surface of the silicon wafer, and the tunneling layer is formed on the other surface of the silicon wafer, such that there is no need to independently prepare the tunneling layer, thereby simplifying the preparation process flow of a cell, improving the processing efficiency of the cell, and facilitating large-scale promotion and application.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact cell and a processing method thereof, a back contact laminated cell and a photovoltaic module, and the processing method comprises the step of texturing a substrate. And carrying out boron diffusion on the substrate to form a boron-doped layer and a borosilicate glass layer on the surface of the substrate. And performing laser etching on the first region and the second region of the substrate, and removing the boron-doped layer, the borosilicate glass layer and part of the substrate in the first region and the second region. And carrying out phosphorus expansion on the substrate, and forming a polycrystalline silicon layer and a phosphorosilicate glass layer on the surface of the substrate. And performing laser etching on the substrate to remove the phosphorosilicate glass layers in the second area and the third area. And texturing the substrate and removing the phosphorosilicate glass layer in the first region and the polycrystalline silicon layers in the second region and the third region to form a textured surface in the second region. And forming a passivation layer on the substrate. Electrode paste is printed in the first area and the third area and sintered. And sintering the back surface of the substrate. The design can improve the double-sided rate and the efficiency of the back contact battery.

The invention belongs to the technical field of glass materials, and discloses thermal shock resistant transparent high borosilicate glass which comprises the following components in percentage by weight: 60-70% of silicon dioxide, 18-22% of diboron trioxide, 4-7% of aluminum oxide, 3-5% of magnesium oxide, 2-4% of alkali metal oxide, 0.5-1.5% of nano silicon nitride and 0.5-1% of nano aluminum titanate. The thermal shock temperature difference of the glass within the temperature change range of 20-200 DEG C is larger than or equal to 180 DEG C, the light transmittance within the visible light range of 400-760 nm is larger than or equal to 85%, the alkali metal oxide is composed of sodium oxide and potassium oxide, the weight ratio of the sodium oxide to the potassium oxide is 1: 1-3: 1, the average particle size of the nanometer silicon nitride is smaller than or equal to 100 nm, and the nanometer silicon nitride is evenly dispersed in the glass matrix; according to the thermal-shock-resistant transparent high borosilicate glass and the preparation method thereof, the thermal shock resistance and light transmittance of the glass are improved by optimizing the chemical components of the glass and adding the special nanoparticles in cooperation with a specific preparation process, and the thermal shock resistance of the glass is improved. The problems that existing high borosilicate glass is insufficient in thermal shock resistance and low in light transmittance in a high-temperature environment are solved.

The application discloses a kind of ship super-long anticorrosion special nano powder coating, preparation method and application, belong to ship heavy anticorrosion material technical field.The preparation method of the ship super-long anticorrosion special nano powder coating is as follows: epoxy resin, graphene modified epoxy resin, core-shell structure ZnO@SiO2, modified 2,5-dimercapto-1,3,4-thiadiazole, borosilicate glass powder, flaky boron nitride, silane coupling agent modified silica, phenolic amine curing agent, 2-ethyl-4-methylimidazole, fumed silica, defoaming agent, ultraviolet absorber, high-temperature pigment are put into stirrer and stirred for 20-30min, then melt extrusion is carried out through double screw extruder, the extrusion temperature is 90-110 DEG C, grinds and sieves, and the ship super-long anticorrosion special nano powder coating is obtained.The coating prepared by the application has good anticorrosion performance and can be applied in the field of ship metal surface corrosion protection.

The invention provides a high-voltage low-loss dielectric material and a preparation method thereof, and relates to the technical field of high-voltage ceramic capacitors, and the high-voltage low-loss dielectric material comprises the following raw materials in parts by mass: 35-38 parts of barium titanate, 20-29.5 parts of strontium titanate, 15-17.5 parts of titanium dioxide, 9-12 parts of bismuth oxide, 3-4 parts of zirconium oxide, 0.8-1.0 part of X, 1.2-1.4 parts of antimony oxide, 1-1.2 parts of calcium carbonate and the like. The preparation method of the dielectric material comprises the following steps: 1, preparing the dielectric material; melting calcium carbonate, magnesium oxide, zinc oxide and the like, performing water quenching, and performing ball-milling granulation to obtain zinc borosilicate glass powder; uniformly mixing the zinc borosilicate glass powder with barium titanate, strontium titanate, titanium dioxide and the like, and granulating to obtain oxide powder; and tabletting and sintering the oxide powder to obtain the high-pressure low-loss dielectric material. The high-voltage low-loss dielectric material is high in dielectric constant, small in dielectric loss, high in compression strength and good in high-temperature stability, and the preparation method is simple.

The invention relates to aluminum borosilicate glass with low dielectric constant and low dielectric loss and a preparation method and application thereof, and relates to the field of aluminum borosilicate glass manufacturing, the aluminum borosilicate glass comprises the following main components by molar percentage: 60%-85% of SiO2, 0-10% of Al2O3, 2%-30% of B2O3, 0-20% of alkaline earth oxide, 0-10% of alkali metal oxide, 0-10% of ZnO, 0-1% of P2O5 and 0-2% of TiO2 and / or ZrO2; during preparation, the raw materials are melted, clarified and homogenized according to the corresponding dosage, and then are annealed for 3-8 hours at the temperature of 600-650 DEG C. The obtained aluminum borosilicate glass can reduce transmission loss during high-frequency signal transmission, has dielectric constant stability which does not exceed + / -0.5 change under a 1-30 GHz signal test, and can be applied to preparation of integrated antennas, electronic packaging and micro electro mechanical system packaging.

The invention discloses metallized silver paste for improving sintering dusting of a TOPCon battery, a preparation method and application, and belongs to the technical field of solar battery manufacturing, and the technical scheme is that the metallized silver paste comprises the following components in percentage by mass: 72-87% of a metal phase; 3-9% of a glass phase; 8-12% of an organic carrier; 0.1%-0.5% of a polyimide precursor; 0.1 to 0.5 percent of cerium oxide; wherein the polyimide precursor forms a cross-linked network at a high temperature, the cerium oxide is used as a passivation layer protective agent, and lithium borosilicate glass is also added into the glass phase; according to the metalized silver paste for improving the sintering dusting of the TOPCon cell, the preparation method and the application, the dusting rate is reduced by improving and optimizing materials and process parameters, and compared with a traditional process, the efficiency, the photoelectric conversion efficiency and the yield of the solar cell are further improved.

The invention discloses a boron diffusion method of a solar cell and the solar cell. The boron diffusion method comprises the following steps: forming a boron-doped layer for a cell substrate in an oxidation furnace tube to obtain a primarily-doped boron substrate, the boron-doped layer comprising a deep-junction boron diffusion layer and a borosilicate glass layer which are laminated from inside to outside; taking out the primarily-doped boron matrix from the oxidation furnace tube, and cooling the primarily-doped boron matrix until the cooled temperature is not higher than 200 DEG C; putting the cooled primarily-doped boron substrate into the preheated oxidation furnace tube again, and heating the primarily-doped boron substrate in an oxygen-free environment to activate non-active boron atoms in the boron-doped layer; and carrying out oxidation source absorption treatment on the deep-junction boron diffusion layer in the primarily-doped boron substrate, and redistributing boron atoms in the deep-junction boron diffusion layer. According to the boron diffusion method, the amount of active boron atoms contained in the surface of the deep-junction boron diffusion layer of the solar cell is increased, the boron doping concentration peak value in the deep-junction boron diffusion layer is reduced, the boron doping concentration distribution is relatively uniform, and the contact resistance between the metal electrode and the deep-junction boron diffusion layer is reduced.

The invention relates to the technical field of glass, in particular to an alkali-free aluminoborosilicate glass composite clarifying agent and a clarifying method thereof. The alkali-free aluminoborosilicate glass composite clarifying agent is prepared from the following raw materials in percentage by mass on the basis of the total mass of alkali-free aluminoborosilicate glass: 0.4 to 5.5 percent of halogen alkaline earth metal salt, 0.03 to 0.4 percent of lanthanum oxide, 0.01 to 0.4 percent of tin dioxide and 0.01 to 0.3 percent of cerium dioxide. The alkali-free aluminoborosilicate glass composite clarifying agent is applied to alkali-free aluminoborosilicate glass, and the problems that the alkali-free aluminoborosilicate glass is poor in clarifying effect and has many bubble defects are solved; the corrosion of high-temperature molten glass to refractory materials at parts such as a tank furnace and the like is reduced, so that the number of stone defects of the refractory materials in the glass is reduced, and the service life of the refractory materials of the furnace is prolonged.

The present invention provides a laser protection glass applicable to dual wavelengths of 0.53 μm and 1.06 μm and a preparation method thereof, belonging to the technical field of preparation of protection glass. The laser protection glass is borosilicate glass, comprising the following components: SiO2 35-47%, Al2O3 1-3%, B2O3 9-13 wt%, Na2O 7-10 wt%, CaO 3-5 wt%, ZnO 3-4 wt%, ZrO2 0.5-1.5 wt%, Er2O3 8-20 wt%, Sm2O3 9-16 wt%. The present invention also provides a preparation method of the laser protection glass applicable to dual wavelengths of 0.53 μm and 1.06 μm. By optimizing the glass components and the melting and annealing processes, the present invention reduces the cracking of the glass generated in the heat treatment process and realizes the protection effect of the glass material at 0.53 μm and 1.06 μm.

The utility model discloses a borosilicate glass laser-beam drilling machine, which relates to the technical field of borosilicate glass processing and comprises a base. The bottom of the bottom plate is fixedly connected with the top of the base; the bottom of the positioning assembly is fixedly connected with the top of the bottom plate, and the positioning assembly is used for positioning borosilicate glass; the outer side of the fixing assembly is fixedly connected with the inner side of the positioning assembly, and the fixing assembly is used for fixing borosilicate glass; the bottom of the shell is fixedly connected with the two sides of the bottom plate; and the top of the laser drilling machine body is fixedly connected with the top of the inner cavity of the shell. According to the device, the fixing assembly is arranged, so that glass is conveniently fixed, the working efficiency is improved, the positioning assembly is arranged, the position of the glass is adjusted, the glass does not need to be disassembled and reinstalled, and the glass punching position is conveniently changed.

The invention discloses a preparation method of a TBC battery electrode grid line, the electrode grid line and a TBC battery, and belongs to the technical field of solar cells, and the preparation method comprises the following steps: carrying out double-sided polishing on a silicon wafer; sequentially depositing a tunneling oxide layer and an intrinsic polycrystalline silicon layer on the back surface of the silicon wafer, and performing boron diffusion; digging an N region and a PN connection partition region on the back surface of the silicon wafer; sequentially depositing a tunneling oxide layer and an intrinsic polycrystalline silicon layer on the back surface of the silicon wafer, and performing phosphorus diffusion on the basis of the tunneling oxide layer and the intrinsic polycrystalline silicon layer; digging a P region and a GAP region on the back surface of the silicon wafer, and digging a hole channel by using a second laser; removing the borosilicate glass layer and the phosphorosilicate glass layer in the pore channel area; sequentially depositing an aluminum oxide layer and a silicon nitride layer on the surface of the silicon wafer; printing non-burn-through slurry in the main grid areas of the P area and the N area through the silk screen printing plate; and carrying out laser-assisted sintering on the auxiliary grid line pore channel region. The completeness of a passivation film layer structure on the back surface of the battery piece is ensured, meanwhile, the contact area of a metal electrode and a silicon substrate is reduced, and metal contact recombination is effectively reduced.

The invention discloses rare earth co-doped alkali-free aluminum borosilicate glass and application, and the rare earth co-doped alkali-free aluminum borosilicate glass comprises the following components in percentage by mole: 68.85-69.60% of SiO2; 13.50%-14.15% of Al2O3 (aluminum oxide); 1.50 to 1.70 percent of B2O3 (boron trioxide); 4.45% to 4.60% of MgO; 5.45% to 5.80% of CaO; 1.20% to 1.80% of SrO; 0.50 to 2.80 percent of La2O3 (La2O3); 0.70% to 3.00% of Y2O3; and 0.10%-0.30% of SnO2. The rare earth co-doped alkali-free aluminum borosilicate glass has a high strain point, a low melting temperature, a low thermal expansion coefficient and a high elastic modulus, production energy consumption is reduced as much as possible under the condition that various properties are improved, and the production and manufacturing requirements of OLED display panels are met.

The invention relates to an electronic component material technology, and aims to provide an LTCC (Low Temperature Co-Fired Ceramic) material with low dielectric constant and low dielectric loss and a preparation method thereof. The LTCC material is prepared from zinc borosilicate glass and zinc borosilicate microcrystalline glass with different softening point ranges, a ceramic filler, silicate and a metal oxide through ball milling, mixing, modeling and sintering, and the material contains Zn2SiO4 with a devitrified phase. According to the invention, two kinds of zinc borosilicate glass with different softening points are adopted as cooling assistants, and a devitrified phase Zn2SiO4 is generated through reaction in the sintering process, so that the problem of large dielectric loss of a composite system caused by more glass phases can be effectively improved; by flexibly regulating and controlling the content of each component and the components of the auxiliary materials, the sintering characteristics of the glass internal component regulation and control material are optimized, and the success rate of matching and co-firing of the material and silver is further improved; meanwhile, the sintering window is relatively wide, so that good quality stability of the product is favorably kept; the dielectric loss of the composite system is reduced by doping the nucleating agent, and the volume shrinkage process of the material is regulated and controlled.

The utility model discloses a lighter using a porous glass oil twist, which comprises a base and an upper cover, a fuel bin used for containing liquid fuel is arranged in the base, the oil twist is arranged in the fuel bin, a through hole corresponding to the oil twist is arranged at the upper end of the base, the upper end of the oil twist extends out of the upper portion of the base through the through hole, and the oil twist comprises a strip-shaped base body made of glass materials. A plurality of micron-sized hole channels are densely formed in the base body in the extending direction of the base body in a penetrating mode, and fuel in the fuel bin rises to the upper end of the oil twist through the hole channels; an ignition mechanism is arranged at the upper end of the base and located beside the upper end of the oil twist. Therefore, the oil twist made of quartz glass or high borosilicate glass is installed on the base to form the lighter, the oil twist is provided with a plurality of micron-sized pore channels and has high temperature resistance and good durability, and the pore channel pore diameter, porosity, outer diameter, length and the like of the oil twist can be designed according to actual application requirements so as to meet the requirement for conveying flow of various kinds of fuel. The application range is wide.

The invention relates to borosilicate glass, a preparation method thereof and electronic equipment. The borosilicate glass is prepared from the following components in percentage by mass: 55 percent to 65 percent of SiO2, 9 percent to 17 percent of B2O3, 8 percent to 18 percent of Al2O3, 1 percent to 5 percent of MgO, 3 percent to 8 percent of CaO, 2 percent to 5 percent of SrO, 0 to 3 percent of BaO, 0 to 3 percent of ZnO, 0.1 percent to 1.0 percent of TiO2 and 0.01 percent to 0.3 percent of Nb2O5. Wherein a is equal to (SiO2 + Al2O3 + B2O3) / B2O3, and a is more than 4.7 and less than 10; each oxide in the formula represents the mass percent of the oxide in the borosilicate glass. The alkali borosilicate glass has relatively high elastic modulus and low dielectric property, and meets the application requirements of products when being applied to preparation of electronic equipment.

The invention belongs to the technical field of glass production, and particularly relates to heat-resistant high borosilicate glass circulating production equipment which comprises a rack, a conveying belt is arranged on the rack, and a production pretreatment mechanism is further arranged on the rack; the production pretreatment mechanism comprises a second sliding rod fixedly connected to one side of the rack, the second sliding rod is slidably connected with a limiting plate, a sliding rail rod is fixedly connected to one side of the upper end of the rack, a third baffle is fixedly connected to the left end of the sliding rail rod, and a plurality of partition plates are transversely arranged at equal intervals and slidably connected to the sliding rail rod. Threaded blocks are slidably connected to the two ends of one side of the partition plate. By utilizing the production pretreatment mechanism, a plurality of glass cups stacked in disorder can be changed into a tidy arrangement state on the conveying belt and move along with the conveying belt, so that the glass cups are sequentially subjected to a plurality of production processes, the situation that the directions need to be adjusted firstly in subsequent processing due to the fact that the glass cups are stacked in disorder is avoided, the production process is more convenient, and the production efficiency is improved. And the processing efficiency can be improved.

The invention relates to the technical field of laser cutting, in particular to a high borosilicate glass cold cutting device with a positioning mechanism, which is used for performing laser cutting and splitting on a high borosilicate glass plate and comprises a laser cutting machine, a processing table longitudinally moving in the laser cutting machine and a laser head transversely moving in the laser cutting machine, the high borosilicate glass plate is installed on a machining table, a splitting cover with an upward opening and an ultrasonic generator are fixedly installed on the machining table, the splitting cover is filled with cooling liquid, two symmetrically-distributed clamping pieces are arranged in the splitting cover, and an XYZ three-axis platform is jointly installed at the tops of the two clamping pieces. An ultrasonic transducer is installed at the output end of the XYZ three-axis platform, the ultrasonic transducer is electrically connected with an ultrasonic generator, and a driving assembly for driving the clamping piece to move horizontally or vertically is installed between the clamping piece and the machining table.

The present invention discloses a perovskite quantum dot glass with enhanced luminescence capability, a preparation method thereof, and an application thereof, and belongs to the field of perovskite quantum dot glass display technology. The present invention regulates the network structure of borosilicate glass by adding ZrO2, so that the perovskite quantum precursor glass gradually changes from self-crystallization to transparency and finally to devitrification, the network structure of the glass matrix is ​​ordered, the surface defects at the interface between the perovskite quantum dots and the glass matrix are passivated, and the radiation recombination probability is increased, thereby obtaining a perovskite quantum dot glass with significantly improved photoluminescence performance. The perovskite quantum dot glass has a green light emission wavelength of 527nm, a full width at half maximum (FWHM) of 25.8nm, an internal quantum dot efficiency of 93.1%, and a brightness of 375cd / m ‑2 The maximum green light brightness under the excitation of the blue light (450nm) plate can reach 2647cd / m ‑2 When this perovskite quantum dot glass is used as an LED backlight module in LCD display, it can achieve a color gamut area of ​​118% of the NTSC standard, which is 1.73 times the color gamut of commercial displays, achieving a wide color gamut display effect.

To provide a flash discharge tube capable of reducing a whole length.SOLUTION: A flash discharge tube 1 comprises: a light transmissivity package 10 into which an inactive gas is sealed therein; and a pair of discharge electrodes (a positive electrode 20 and a negative electrode 30) that are arranged to both ends of the package 10. The package 10 contains: a quarts glass tube 11; a pair of borosilicate glass tubes 12 and 13 that are arranged to both ends of the quarts glass tube 11, and seal the pair of discharge electrodes; and a pair of intermediate glass materials 14 and 15 that are arranged to between the quarts glass tube 11 and the pair of borosilicate glass tubes 12 and 13, and bond the quarts glass tube 11 and the pair of borosilicate glass tubes 12 and 13. Each of the pair of intermediate glass materials 14 and 15 is a glass material formed by one step or a two steps. Each tip end part of the pair of discharge electrodes is positioned in the quarts glass tube 11.SELECTED DRAWING: Figure 1

The invention discloses a low-dielectric low-loss high-strength borosilicate glass ceramic composite material and a preparation method thereof, and belongs to the technical field of borosilicate glass ceramic composites.The low-dielectric low-loss high-strength borosilicate glass ceramic composite material is prepared from, by weight, 70% of low-alkali borosilicate glass ceramics with the low borosilicate ratio, 29% of Al2O3 and 1% of Bi2O3. The preparation method comprises the following steps: preparing low-alkali borosilicate glass ceramics with a high borosilicate ratio, melting the low-alkali borosilicate glass ceramics with the high borosilicate ratio and amorphous SiO2 at a set temperature to obtain the required low-alkali borosilicate glass ceramics with the low borosilicate ratio, and finally mixing and ball-milling the crushed and ground low-alkali borosilicate glass ceramics with Al2O3 and Bi2O3 to obtain the low-alkali borosilicate glass ceramics with the low borosilicate ratio. And finally, the borosilicate glass ceramic composite material is sintered at the temperature of 880-900 DEG C. The borosilicate microcrystalline glass ceramic composite material is low in dielectric, low in loss and high in strength.

The invention provides a preparation method of a back contact solar cell, and the method comprises the steps: providing a solar cell substrate which comprises a silicon wafer, and the back surface of the silicon wafer is provided with a first region and a second region, a first tunneling oxide layer, a boron-doped polycrystalline silicon layer, a borosilicate glass layer, a second tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer and a phosphorosilicate glass layer are sequentially arranged in the first region, and a second tunneling oxide layer, a phosphorus-doped polycrystalline silicon layer and a phosphorosilicate glass layer are sequentially arranged in the second region; forming a boron-phosphorosilicate glass layer on the back surface of the solar cell substrate; performing first laser processing on the edge of the second area and the first area; texturing the front surface of the silicon wafer, and etching the first laser processing area on the back surface of the silicon wafer; removing the second tunneling oxide layer and the borosilicate glass layer in the first region, and removing the boron-phosphorosilicate glass layer and the phosphorosilicate glass layer in the second region; and preparing a first electrode and a second electrode. According to the preparation method, the conversion efficiency and the yield of the back contact solar cell can be improved.

The invention provides a preparation method of a boron-doped selective emitter, the emitter and a TOPCon battery, and relates to the technical field of TOPCon batteries. The preparation method comprises the following steps: depositing a borosilicate glass layer on the front surface of a textured silicon wafer through a PECVD (Plasma Enhanced Chemical Vapor Deposition) process; removing the borosilicate glass layer in a non-fine grid region on the front surface of the silicon wafer through a laser patterning process to obtain the silicon wafer of which the borosilicate glass layer in a fine grid region on the front surface of the silicon wafer is reserved; forming a shallow doped region in a non-fine grid region on the front surface of the silicon wafer through a boron diffusion process, and forming a primary heavily doped region on a borosilicate glass layer in a fine grid region on the front surface of the silicon wafer; and pushing the boron source in the primary heavily doped region into the silicon wafer through an SE process to form a secondary heavily doped region so as to obtain the boron-doped selective emitter. The preparation method can reduce the proportion of concentric circles generated by silicon wafer oxygen precipitation caused by a high-temperature process, further reduces the contact resistivity of the front metal semiconductor, and improves the efficiency of the cell.

The invention discloses a three-dimensional thermal stress coupling simulation method for borosilicate glass / Cu / dielectric layers. The method comprises the following steps: collecting and sorting effective information of material attributes and physical fields involved in a simulation process; preliminarily screening material characteristic parameters, and determining interfacial compatibility among different materials; a preliminary three-dimensional model of the borosilicate glass, Cu and dielectric layer composite material is constructed, stability analysis is carried out for different material combinations, and an optimal material combination is screened; establishing a three-dimensional thermal stress coupling simulation model by combining the preliminary three-dimensional model, simulating thermal stress distribution under different working conditions, analyzing a stress transfer mechanism between different material layers, and optimizing thermal adaptability of a material interface; optimizing the structure of the composite material by using a finite element analysis technology, and adjusting the thicknesses and proportions of different material layers; through a repeated optimization process, an optimal three-dimensional thermal stress distribution design scheme is finally determined, and the effectiveness and reliability of the three-dimensional thermal stress coupling simulation method are verified through experiments.

The invention discloses a high-bending-resistance and low-dielectric-loss LTCC substrate preparation method and an LTCC substrate, and the method comprises the steps: mixing inorganic powder, an organic system and a solvent through ball milling, dissolving and stirring, and preparing a green ceramic chip through a tape casting technology; carrying out lamination, warm isostatic pressing, cutting, glue discharging and sintering on the green ceramic chip to obtain the LTCC substrate; the inorganic powder comprises sodium borosilicate glass, aluminum oxide and mullite whiskers. According to the invention, the sodium borosilicate glass is used as a glass phase, the mullite whisker and the alumina powder are used as ceramic phases, and the excellent mechanical properties and extremely low dielectric loss of the mullite whisker are utilized to modify the sodium borosilicate glass-alumina composite material. The problems that an existing sodium borosilicate glass-aluminum oxide LTCC composite material is low in bending strength and high in dielectric loss are solved.

This application relates to the technical field of concrete and specifically discloses a nuclear radiation protection concrete and its preparation method. The nuclear radiation protection concrete disclosed in this application comprises the following components: cement, a radiation protection agent, barite sand, crushed stone, silica fume, a retarder, a polycarboxylic acid water reducer, a defoamer, a thickener, an admixture, and water. The radiation protection agent is prepared by uniformly mixing barium powder, borosilicate glass, castor oil polyoxyethylene ether, and ethanol in a weight ratio of (20-28): (48-54): (5-10): 20, heating the mixture to 1200-1350°C at a heating rate of 5-10°C / min and holding the mixture at that temperature for 1-2 hours; then quenching the mixture with water, drying, ball milling, and sieving to obtain a radiation protection agent with a particle size of ≤200 mesh. This application also discloses a preparation method for the nuclear radiation protection concrete. The nuclear radiation protection concrete disclosed in this application has good radiation protection effects and can also improve the mechanical properties and frost resistance of the concrete.

The application provides an improved mold for producing medium borosilicate glass bottles, and relates to the technical field of glass bottle production and processing. The mold comprises a fixed mold, movable molds, support mold seats and a mold stripping assembly. Two movable molds and the fixed mold cooperatively form two mold cavities. The top of one side of each of the two support mold seats is provided with two protrusions. The mold stripping assembly comprises a hydraulic push rod, the inside of one end of the hydraulic push rod is provided with a guide sliding sleeve, one end of the guide sliding sleeve is provided with an adapter seat plate, a pulling spring is fixed between one side of the adapter seat plate and the movable end, and one end of the hydraulic push rod is provided with a linkage. The technical key points are as follows: the glass bottle is formed in the mold cavity between the fixed mold and the movable mold, the concave part of the bottom of the glass bottle is formed by the protrusions, and the horizontal surface of the bottom of the glass bottle is formed by the surface of the support mold seat. When the movable mold is controlled to move away from the fixed mold, the restriction on the glass bottle is removed, and the glass bottle is conveniently taken out.

The utility model relates to the field of glass lens molds, and provides a mold for pressing a high borosilicate glass lens, which comprises a punch, an opening ring and a bottom mold, the bottom end of the opening ring is fixedly connected with the bottom die, the punch is arranged in the opening ring, and the driving device drives the punch to press downwards to be pressed with the bottom die to form a pressed flat glass lens. An annular protrusion is arranged on the edge of the bottom end of the punch. A plurality of heat preservation blocks are arranged at the bottom end of the bottom die, and grooves are formed in the middles of the upper surfaces of the heat preservation blocks. The mold has the beneficial effects that the heat preservation effect of molten glass in the mold is obviously improved by arranging the heat preservation block, and the molten glass is prevented from entering a mold closing seam by arranging the annular bulge, so that the generation of glass chips is reduced.

The invention discloses a germanium telluride thermoelectric fiber coated by interface modified high borosilicate glass and a preparation method of the germanium telluride thermoelectric fiber. The preparation method comprises the following steps: placing columnar antimony trioxide in a cladding glass tube in an inert environment, heating a high borosilicate glass tube to a temperature above the melting point of the antimony trioxide, and carrying out antimony ion thermal diffusion treatment in which the molten antimony trioxide is thermally diffused to the inner wall of the glass tube; after the diffusion is finished, quickly pouring the antimony trioxide melt out of the cladding glass tube, and cooling to room temperature to obtain an interface modified glass tube; and then in an inert environment, placing the columnar germanium telluride in an interface modified glass tube with the inner surface modified, heating to a temperature above a high temperature point of a germanium telluride melting point and a high borosilicate glass softening point, melting, and drawing at 900 + / -50 DEG C to prepare the germanium telluride thermoelectric fiber which has a continuous fiber core and passes through an interface modified high borosilicate glass cladding. The problem that the composite thermoelectric fiber with the continuous fiber core cannot be drawn in the prior art is effectively solved.

The present invention discloses a glass frit for a conductive paste for the front surface of a TOPCon solar cell, a preparation method thereof, a conductive paste, a preparation method thereof, and a solar cell. The glass frit comprises a main glass frit A and a secondary glass frit B. The main glass frit A comprises the following components by weight: 30-80 wt% B2O3, 10-50 wt% SiO2, 10-50 wt% SeO2, and 0-20 wt% oxide additives; the secondary glass frit B is Pb-Si-Zn-B glass; and the weight ratio of the main glass frit A to the secondary glass frit B is 4:1-1:4. The glass frit provided by the present invention utilizes a high-borosilicate glass system, which is less corrosive and less susceptible to silicon nitride surface reactions. This system can control corrosion depth and reduce recombination, thereby increasing the open-circuit voltage. This solves the problem of open-circuit voltage drop caused by the use of conductive silver-aluminum paste in the P-type emitter of current TOPCon solar cells.