30 results about "Anodic bonding" patented technology

The application provides a pressure sensor and an electronic device, wherein the pressure sensor comprises: a differential pressure sensor, a first substrate and a second substrate which are sequentially stacked; a third substrate in the differential pressure sensor is connected with the first substrate through anode bonding to form an absolute pressure sensor; the first substrate has a first through hole penetrating a thickness direction; the second substrate has a second through hole penetrating the thickness direction, and an electronic element is arranged on a side of the second substrate away from the first substrate; and the electronic element is electrically connected with the differential pressure sensor through the second through hole and the first through hole in sequence.

The present invention relates to a microfluidic chip for an inhalation sprayer. A semi-closed internal cavity is formed by a silicon wafer 1 and a glass sheet 2 by means of anodic bonding, and comprises an inlet end 3 and an outlet end 4; the outlet end comprises a left outlet 41 and a right outlet 42, the left outlet and the right outlet being axisymmetric with respect to the central axis X of the microfluidic chip, and the axis Y of the left outlet and the axis Y' of the right outlet jointly meeting the central axis X at a point A; the outlet end comprises a cutting start line U0, the vertical distance from the point A to the cutting start line U0 being L; the outlet end further comprises a cutting buffer line U1, a fluid in the microfluidic chip being ejected from the cutting buffer line U1, the vertical distance from the cutting buffer line U1 to the cutting start line U0 being a cutting buffer distance L', and L'≤L, so as to ensure that the fluid collides and sprays outside the chip; moreover, the cutting buffer distance can protect the integrity of the outlet end when the microfluidic chip is cut, thus improving the overall quality and yield of microfluidic chips, and reducing costs.

This invention relates to the field of semiconductor technology, providing a wafer-level packaging method and structure. The method includes: providing a MEMS suspended structure and a cover plate structure; etching trenches and electrode patterns on the bonding surface of the cover plate structure; directly bonding the MEMS suspended structure and the cover plate structure; etching the front side of the cover plate structure to achieve trench penetration; bonding the cover plate structure to a glass anode to form a glass sealing layer; melting the glass of the glass sealing layer at high temperature and reflowing it into the trenches to form an electrode isolation layer that isolates the through-penetrating electrodes; and thinning and polishing the glass sealing layer. This invention utilizes direct bonding technology combined with a glass reflow scheme to achieve wafer-level packaging of chips. The glass, as an isolation and sealing material, exists only in extremely fine trenches, solving the problem of poor temperature performance and low temperature linearity of devices caused by thermal stress mismatch when other materials are introduced.

This invention provides a multifunctional, compact, and high-precision pressure measurement device. The pressure-sensing module of the device employs a MEMS pressure core, with its core being an SOI (silicon-on-insulator) piezoresistive chip. The chip uses a flip-chip structure: the front side of the chip (the side with the piezoresistive circuitry) is fused to a glass cover plate wafer via anodic bonding or glass powder sintering, forming a sealed reference vacuum chamber or atmospheric reference chamber. The back side of the chip serves as the pressure-sensing surface, directly or through a pressure-transmitting medium contacting the pressure being measured. This device is suitable for miniaturized applications in high-temperature, high-pressure, small-volume, and strong electromagnetic interference environments.

The invention discloses an MEMS (Micro Electro Mechanical System) thermal acceleration sensor for realizing wafer-level packaging by utilizing a silicon structure in glass and a preparation method. The sensor adopts a three-layer stacked structure, and comprises a silicon sealing cover in glass, an acceleration sensor body and a sealing laminated wafer. Wherein a silicon conductive through column which is electrically insulated from the glass medium is arranged in the glass-in-silicon sealing cover, so that electric signal transmission in the vertical direction is realized; the acceleration sensor body comprises a heating and temperature measuring module manufactured on a supporting layer; the sealing bonding wafer and the sealing cover jointly form a sealed cavity to package the working fluid. The preparation method comprises the following steps: preparing a silicon-in-glass sealing cover through two times of deep silicon etching, anodic bonding and a glass backflow process, manufacturing a sensor functional structure on a silicon substrate and forming a back cavity, and finally completing wafer-level integrated packaging through a surface mounting process. The wafer-level batch preparation and packaging complete solution of the thermal acceleration sensor is realized, and the problems of high packaging cost and low efficiency of a non-standard process are solved.

The invention discloses an MEMS ionization vacuum sensor based on magnetic field assistance and a manufacturing method thereof, and belongs to the technical field of microelectronics. The sensor comprises a glass substrate, an emitter electrode, a lead electrode, an electron emitter, a first insulating spacer layer, a grid electrode, a second insulating spacer layer, top glass, an ion deflection electrode, an ion collector, an annular electrode and a magnetic field generation part, the manufacturing method comprises the steps of preparation of the substrate and the top glass, bonding of the electron emitter, processing of the insulating spacer layer and the grid electrode, anodic bonding, laser bonding, installation of the magnetic field component and scribing. An electric field-magnetic field composite field is used for remarkably expanding the electron motion trail, the problems that an existing sensor is weak in ion flow and poor in anti-interference capacity are solved by combining the physical isolation design of an ionization and collection area, and the sensor has the advantages of being small in size, high in precision, good in consistency and low in cost and is suitable for the fields of semiconductor manufacturing and aerospace.

The invention discloses a chip packaging device and a using method thereof in the technical field of anodic bonding, chip positioning and chip packaging, and the chip packaging device comprises a machine body module, a bonding module, a feeding module, a discharging module, a transmission module and a driving module, when a chip is packaged, raw materials are fed through the feeding module and then conveyed to the bonding module for bonding, and the driving module is used for driving the bonding module to carry out chip packaging; then, the materials are conveyed to the discharging module for discharging; the output end of the driving module is connected with the bonding module to drive the bonding module to work, and the driving module drives the feeding module and the discharging module to work through the transmission effect of the transmission module. The chip packaging device provided by the invention is simple in structure, low in cost and good in stability, can realize automation of the whole process of feeding, positioning, bonding and discharging, and improves the production efficiency.

This invention relates to a microfluidic chip for an inhalation sprayer, comprising a silicon wafer 1 and a glass sheet 2 bonded together by anodic bonding to form a semi-enclosed internal cavity, including an inlet end 3 and an outlet end 4. The outlet end includes a left outlet 41 and a right outlet 42, which are axially symmetrical with respect to the central axis X of the microfluidic chip. The axis Y of the left outlet and the axis Y' of the right outlet intersect the central axis X at point A. The outlet end includes a cutting start line U0, and the vertical distance from point A to the cutting start line U0 is L. The outlet end also includes a cutting buffer line U1, from which fluid inside the microfluidic chip is ejected. The vertical distance from the cutting buffer line U1 to the cutting start line U0 is the cutting buffer distance L', where L' ≤ L, to ensure that the fluid collides and sprays outside the chip. The cutting buffer distance protects the integrity of the outlet end during microfluidic chip cutting, improving the overall quality and yield of the microfluidic chip and reducing costs.

This invention belongs to the field of optical device technology. It proposes a MEMS micromirror structure and packaging method. The structure mainly includes the design and fabrication of a chip substrate, a glass cover, a getter, and a thermally conductive layer. A CMOS circuit and a movable micromirror array structure are fabricated on an SOI wafer structure layer. The glass cover is connected to the SOI wafer support layer via anodic bonding to achieve hermetically sealed packaging of the micromirror array. An AlN thin film is deposited on the back side of the substrate, and TSV technology is used to lead wires from the back side of the SOI wafer. This scheme uses the buried oxide layer of the SOI wafer to isolate the substrate layer from the micromirror array and CMOS circuit, avoiding the impact of high voltage on device performance and ensuring compatibility with CMOS processes. The back-side AlN thin film deposition improves heat dissipation during the process and device operation. Furthermore, the wafer-level packaging process offers advantages such as simple process, low cost, and ease of mass production.

This invention discloses a semi-flexible sealed composite material beam-membrane-island structure for micro / nano devices and its fabrication method. The invention employs both rigid and flexible materials to construct the beam-membrane-island structure of the micro / nano device. The beam and island structures are made of rigid materials that can be fabricated in micro / nano dimensions, while flexible materials fill the periphery of the beam and island structures. The flexible filling layer acts as a "displacement coordination layer," ensuring a clear mechanical response while maintaining the high modulus of the silicon beam. Simultaneously, the local deformation of the flexible layer absorbs lateral coupling stress, allowing strain fields in different directions to be separated and amplified in the beam / island region. The flexible material forms a stress transition zone between the beam and island, preventing strong stress concentration in the pure silicon beam-island structure under concentrated loads. This invention still uses materials compatible with micro / nano fabrication processes as the main structural material, enabling integration with standard photolithography, reactive ion etching, deep silicon reactive ion etching, anodic bonding processes, through-silicon vias (TSVs), and glass vias, among other micro / nano processes.

The application discloses a kind of semi-flexible sealing composite beam membrane island structure formula micro-nano device and its processing method.The application uses hard material and flexible material to constitute the beam membrane island structure of micro-nano device, wherein the hard material that can be micro-nano processed is used in beam structure and island structure, and flexible material is filled in the periphery of beam structure and island structure.Flexible filling layer plays the role of "displacement coordination layer", and by the local deformation of flexible layer, transverse coupling stress is absorbed, so that strain field in different directions is separated and enlarged in beam / island area.Flexible material forms stress transition zone between beam and island, to avoid strong stress concentration of pure silicon beam island structure under concentrated load.The application still uses material compatible with micro-nano processing technology as main structure material, and can be integrated with standard photolithography, reactive ion etching, deep silicon reactive ion etching and anodic bonding process, through silicon via, through glass via and other micro-nano processes.

The utility model relates to the technical field of anodic bonding, in particular to a high-coaxiality anodic bonding clamp, which is characterized in that a plurality of groups of positioning columns are mounted on the peripheral side of a base, and an epitaxial wafer pressurizing sheet, an epitaxial wafer limiting sheet, a workpiece limiting disc and an upper insulating disc are sequentially inserted and sleeved on the corresponding positioning columns through a plurality of groups of positioning holes distributed on the peripheral side of the upper insulating disc; an epitaxial wafer is placed in an inner ring of an epitaxial wafer limiting piece, the bottom face of the epitaxial wafer is in contact with an epitaxial wafer pressurizing piece, then an AVG glass plate is placed in an inner ring of a workpiece limiting disc and pressed on the top face of the epitaxial wafer, a graphite pressurizing disc is placed between an upper insulating disc and the AVG glass plate, and a downward pressing guide disc is placed in the center of the upper side of the upper insulating disc. The steel ball is placed in a guide cylinder formed at the top of the downward pressing guide disc; the grounding pin penetrates through the upper insulating disc and is in contact with the graphite pressurizing disc; and the positive electrode power connection sleeve sleeves the top ends of the positioning columns. The fixture ensures the coaxiality between the AVG glass plate and the epitaxial wafer through the workpiece limiting disc and the epitaxial wafer limiting piece, and ensures the overall coaxiality of the fixture through the positioning column.

The utility model discloses a refrigeration structure and a packaging structure of a two-dimensional array type silicon detector. The refrigeration structure comprises a silicon-based bottom plate, a silicon-based splitter plate, a cover plate and two water receiving pipes. A first layer of micro-channel is formed between the silicon-based bottom plate and the silicon-based splitter plate through a silicon-silicon bonding process; the silicon-based splitter plate and the cover plate form a second-layer micro-channel through anodic bonding, and the second-layer micro-channel is used for distributing the inflow cooling medium and receiving the backflow cooling medium for each channel in the first-layer micro-channel; the two water receiving pipes are connected with the cooling medium input port and the cooling medium output port in the cover plate respectively and used for providing circulating cooling media for the micro-channel radiator. The refrigeration structure aims to reduce detection dead zones among the modules in the detector and realize efficient and uniform refrigeration of the detector modules.

This invention discloses a room-temperature self-sustaining vacuum zero-point energy array power generation device, belonging to the fields of quantum clean energy and micro-nano power generation technology. This invention solves the technical problems of traditional vacuum energy power generation, such as low efficiency, the need for vacuum pumps, the requirement for low-temperature superconductivity, energy recirculation, and the inability to output net power. The device consists of a permanently sealed vacuum Casimir trapping array, an asymmetric piezoelectric resonant amplification layer, a unilateral directional magnetic shielding energy-locking layer, and a room-temperature quantum rectification output layer. It utilizes silicon-glass anode bonding to achieve a 30-year long-term high vacuum. Through nano-spacing plates, room-temperature rectification, and a unidirectional energy-locking structure, it stably extracts vacuum zero-point energy and outputs net electrical energy under pump-free, cooling-free, and superconducting conditions. This invention can be mass-produced at the wafer level and can be stacked for expansion. A 1-square-meter module can output 280W to 650W net power. It has advantages such as zero fuel, zero emissions, long lifespan, self-sustainability, and applicability to all scenarios. It can be widely used in household power supply, industrial power, aerospace energy, and distributed power grids, and is a sustainable clean energy system that can be engineered and implemented.

This application discloses a miniaturized magnetometer gas chamber and its fabrication method. The gas chamber includes several sides, which are fabricated by anodic bonding and sealing. A first side and a second side are arranged opposite to each other. Metastable excitation coils are disposed on the first surfaces of both the first and second sides. Metal mirrors are disposed on the second surfaces of both the first and second sides. The second surfaces of both the first and second sides are located inside the gas chamber, which is filled with... 3 He; the dimensions of the air chamber are in millimeters. The embodiments of this application can improve the detection sensitivity and reliability of the magnetometer. This application can be widely applied in the field of magnetic field sensors.

The invention discloses a wafer back-to-back anodic bonding method based on a separated bonding sucker, and relates to the technical field of wafer bonding. The separated bonding sucker comprises a bearing part and an annular adsorption part. The anodic bonding method comprises the following steps: providing a product wafer and a glass wafer; the adsorption mechanism is used for fixing the glass wafer, the annular adsorption piece is used for fixing and adsorbing the product wafer, and the optical alignment system is used for aligning the bonding surface of the glass wafer and the back of the product wafer; integrally transferring the product wafer and the glass wafer which are aligned to a bonding position of a bonding machine table; and controlling the glass wafer to move towards the product wafer, and applying a preset bonding condition to the product wafer and the glass wafer, so that the wafer back of the product wafer and the bonding surface of the glass wafer are subjected to anodic bonding. According to the anodic bonding method, on the premise that the alignment precision and the bonding strength are not affected, the risk that metal on the crystal face of the product wafer is crushed in the back-to-back anodic bonding process can be effectively reduced.

A method of producing a diffraction grating of borosilicate glass or barium borosilicate glass, the method comprising the steps of forming a grating on a surface of a silicon wafer the grating through the Bosch process; forming an oxide film on a surface of the grating by heating and exposure to water vapor of the silicon wafer; removing the oxide film using hydrofluoric acid; making the surface provided with the grating of the silicon wafer and a surface of a glass plate undergo anodic bonding; heating the silicon wafer and the glass plate bonded to each other; polishing a surface opposite to the boded surface of the silicon wafer and a surface opposite to the boded surface of the glass plate; and removing silicon from the glass plate by selective etching using xenon difluoride.

The invention relates to the technical field of opto-electro-mechanical and inertial navigation, and particularly discloses an opto-electro-mechanical single-shaft disc gyroscope with an optical cavity structure and a processing method thereof, and the opto-electro-mechanical single-shaft disc gyroscope sequentially comprises a glass cap, an opto-electro-mechanical single-shaft disc gyroscope device layer and a glass substrate from top to bottom, the glass cap and the glass substrate are bonded with the optical-mechanical-electrical single-shaft disc type gyroscope device layer through an anode; wherein the driving fixed comb teeth (24) are distributed at the 0-degree position, the 90-degree position, the 180-degree position and the 270-degree position of the whole device layer; the two-dimensional photonic crystal structure layers are distributed at the 45-degree position and the 225-degree position of the whole device layer; the whole disc structure sequentially comprises a disc type center mass block, a spring-like resonance beam, a connecting beam and a nested circular ring from inside to outside. One part of the two-dimensional photonic crystal structure is connected to the nested ring, and the other part of the two-dimensional photonic crystal structure is fixed outside the nested ring through anchor points. According to the invention, the angular velocity of a single shaft is measured in a single device, the structure is simple, and the implementation is easy.

The invention discloses a high-temperature and high-pressure temperature calibration type optical fiber Fabry-Perot acceleration sensor based on a composite cavity. The acceleration sensor is used for monitoring flow-induced vibration of a heat transfer tube of a pressurized water reactor steam generator in an environment of 350 DEG C and 17.5 MPa. The sensor comprises a packaging base, a gold-plated optical fiber, an optical fiber insertion core, a collimator tube, a spherical lens, a 45-degree dip angle metal reflector, a sensing chip and a sealing cover plate. The sensing chip is of a three-layer sealing structure and is formed by anodic bonding of a glass substrate and a silicon diaphragm; the silicon diaphragm is integrated with eight symmetrical hollow cantilever beams and a central mass block. The composite cavity comprises a vibration cavity (25 [mu] m) and a temperature cavity (400 [mu] m), and the end face of the optical fiber is not used as a reflecting surface, so that spatial separation and temperature compensation are realized. And the symmetrical cantilever beams reduce transverse crosstalk. And a light path is turned by 90 degrees through a 45-degree 4J29 reflecting mirror, and laser welding sealing is performed. The volume is 20 * 10 * 10 mm, the normal-temperature sensitivity is 4.53 nm / g, the inherent frequency is 7418.8 Hz, the transverse crosstalk is 0.281%, the resolution ratio is 4.4 mg, and the measuring range is + / -238 g; drift at the temperature of 350 DEG C and under the pressure of 17.5 MPa for 60 hours; the wavelength is 0.1 nm.

The invention provides an MEMS atomic clock air chamber and a preparation method thereof. The method comprises the following steps: selecting a silicon wafer, and etching the front surface of the silicon wafer to form a silicon groove structure; carrying out anodic bonding on the front surface of the silicon wafer etched with the silicon groove and a glass wafer; forming top glass and a glass optical window on the silicon wafer by adopting a glass backflow process, and flattening the upper surface of the top glass; photoetching and etching the back surface of the silicon wafer, etching a channel structure, and forming an optical cavity and an alkali metal placing groove; alkali metal is put in, anodic bonding is carried out on the face, where the channel structure is etched and the optical cavity is formed, of the glass wafer to package the optical cavity, and the alkali metal is activated. According to the invention, the novel on-chip MEMS atomic clock air chamber with the optical cavity with multiple reflection capability is constructed, so that the length of an optical path in the atomic clock air chamber can be obviously increased, and the interaction strength between light and alkali metal atoms is enhanced.

This invention belongs to the field of optical device technology and discloses a MEMS device and packaging method based on SU8 adhesive. The method includes a structural substrate and a packaging wafer anoly bonded by an SU8 adhesive bonding ring. The packaging wafer has grooves to form a moving microcavity. A getter is deposited within the moving microcavity of the packaging wafer. The moving microcavity also accommodates a movable MEMS structure disposed on the surface of the structural substrate. Chip pads and metal leads are laid on the outer side of the moving microcavity. The packaging wafer also has an anti-reflow groove located at one end of the packaging wafer near the SU8 adhesive bonding ring. This invention uses SU8 adhesive to fabricate a polymer bonding ring on a complex packaging wafer with a microcavity. By optimizing the SU8 adhesive pretreatment process and designing an anti-reflow structure, contamination of the device due to SU8 adhesive flow is avoided. Polymer wafer-level bonding is used to achieve MEMS device packaging, and chip separation is achieved through two dicing operations. This method has advantages such as low temperature, low stress, flexible process, and low cost.

This invention discloses a self-driven microchannel heat sink, comprising: a cover plate and a substrate, which are anoly bonded together. The cover plate has a recessed vapor chamber and a gas phase channel on its inner surface, the gas phase channel communicating with the vapor chamber. The substrate has a recessed evaporation chamber, a condensation chamber, a liquid storage chamber, and a liquid phase microchannel. One end of the liquid phase microchannel communicates with the evaporation chamber, and the other end communicates with the condensation chamber. The evaporation chamber communicates with the vapor chamber, and the end of the gas phase channel away from the vapor chamber communicates with the condensation chamber. The liquid storage chamber communicates with the evaporation chamber. Fins are spaced apart within the evaporation chamber to form microchannels. Thus, the self-driven microchannel heat sink of this invention utilizes the capillary force and vapor pressure difference of the microchannels to drive the working fluid circulation. The vapor chamber and gas phase channel enable gas-liquid separation and flow, the two liquid phase channels accelerate the working fluid circulation, the split-flow replenishment reduces flow resistance, and the self-wetting working fluid enhances the heat dissipation limit, thereby achieving zero-power heat dissipation.

The present application relates to a cooling structure heterogeneous integration package structure and a forming method thereof, wherein the double-sided cooling structure heterogeneous integration package structure comprises: a micro-channel adapter plate, the front surface of which is provided with a first micro-channel; a glass wafer, which is anodically bonded with the two sides of the front surface of the micro-channel adapter plate, wherein the glass wafer is provided with a cavity, which is communicated with the first micro-channel; a chip stack structure, which is connected with the middle area of the front surface of the micro-channel adapter plate; and a micro-channel liquid cooling plate, the front surface of which is connected with the chip stack structure, and the back surface of the micro-channel liquid cooling plate is provided with a second micro-channel, which is communicated with the cavity of the glass wafer. The intercommunication of the upper and lower channels is realized by the glass wafer, which has high reliability, is corrosion-resistant and is not easy to age, thereby reducing the risk of long-term use failure.

The invention relates to an atomic gas chamber and a preparation method thereof, and an atomic gas chamber array and a preparation method thereof. The preparation method of the atomic gas chamber comprises the following steps: providing independent or a plurality of mutually connected middle cavity layers; the middle cavity layer is of a hollow structure composed of two side plate sets and is provided with a first opening end face and a second opening end face. Wherein one of the two side plate groups is made of glass; the other one of the two side plate groups is made of silicon; the bonding auxiliary layer covers the first opening end face and the second opening end face respectively; the first glass cover plate and the first opening end face are subjected to anodic bonding through the bonding auxiliary layer to form a gas chamber; the gas chamber is filled with alkali metal; and the second glass cover plate is subjected to anodic bonding with the second opening end face through the bonding auxiliary layer. According to the atomic gas chamber, the preparation method of the atomic gas chamber, the atomic gas chamber array and the preparation method of the atomic gas chamber array, the multi-optical-channel atomic gas chamber with high gas tightness and high optical performance can be obtained.

The invention discloses a visible light chip and infrared chip integrated wafer level packaging structure and a packaging method. The structure comprises a visible light wafer, an infrared wafer and a deep cavity frame wafer between the visible light wafer and the infrared wafer. The visible light wafer comprises a plurality of visible light chips capable of transmitting infrared spectrum; the deep cavity frame wafer comprises a plurality of deep cavity frame chips; each deep-cavity frame chip is of a hollow enclosure-shaped structure and comprises a deep-cavity frame, a connecting structure and a getter; the infrared wafer comprises a plurality of infrared chips; all visible light chips of the visible light wafer, all deep cavity frame chips of the deep cavity frame wafer and all infrared chips of the infrared wafer are in one-to-one correspondence, and each deep cavity frame chip, the corresponding visible light chip and the corresponding infrared chip form a vacuum chamber through two times of anodic bonding. Bonding alignment is facilitated, useless structures are removed in the subsequent scribing process, and efficient and low-cost integration is achieved through wafer-level vacuum packaging.

The invention provides a chip atom magnetometer gas chamber integration method and a chip atom magnetometer atomic gas chamber, and the method comprises the steps: 1, precisely placing one end of a glass tube shell on the surface of a first silicon wafer according to an overlay mark, and placing the glass tube shell in anodic bonding equipment for anodic bonding; step 2, filling the glass tube shell subjected to anodic bonding in the step 1 with an alkali metal compound; step 3, carrying out anodic bonding on the other end of the glass tube shell and a second silicon wafer, and simultaneously vacuumizing an inner cavity of the glass tube shell to ensure a vacuum environment of an air chamber; 4, heating the bonded silicon wafer at a set temperature for reaction, and completing release of the alkali metal and the nitrogen buffer gas in the gas chamber; and step 5, performing laser scribing on the first silicon wafer and the second silicon wafer according to the overlay mark to complete scribing separation of the atom magnetometer gas chamber. According to the technical scheme, the technical problem that the application range of the atom magnetometer is limited due to the fact that the meter head of the atom magnetometer is large in size in the prior art is solved.

A method for producing an alkali vapor cell includes a step of preparing a first member and a second member constituting at least a part of a container for enclosing an alkali metal; a step of forming a first antireflection film on a first surface of the first member; a step of forming a second antireflection film on a second surface of the first member, the second surface being opposite to the first surface; and a step of bonding the first member and the second member to each other by anodic bonding.

The invention provides a resonant micro-differential pressure sensor and a preparation method thereof, the resonant micro-differential pressure sensor comprises a packaging layer, a pressure sensitive film layer, a resonator layer, a sealing layer and an assembly layer which are arranged in sequence from top to bottom, and the pressure sensitive film layer is provided with a sensitive film; the packaging layer is provided with an air inlet channel, and the packaging layer and the sensitive film are stacked; the resonator layer comprises two resonators and an electrode structure, the two resonators are located in the middle area and the edge area of the sensitive film respectively, and the electrode structure is arranged on the same side of the two resonators; an air inlet structure is arranged on the assembly layer, and at least part of the air inlet structure is overlapped with the two resonators in the free direction from top to bottom; wherein the sealing layer and the resonator layer are connected through a silicon-silicon bonding process, and the sealing layer and the assembly layer are connected through an anodic bonding process; the problems that in the prior art, sensitivity is limited in the manufacturing process of a micro differential pressure sensor, thermal stress and residual stress are caused after packaging, and vacuum packaging of a resonator cannot be achieved through a silicon-silicon bonding technology are solved.

The invention relates to the technical field of chip packaging, and provides an anodic bonding method, which comprises the following steps of: fixing a to-be-bonded base material comprising a silicon wafer or a glass sheet on a clamp, putting the to-be-bonded base material into a vacuum pressure sintering furnace, and performing formic acid cleaning on the to-be-bonded base material comprising the silicon wafer or the glass sheet; comprising the steps that a to-be-bonded base material of a silicon wafer or a glass sheet is subjected to plasma activation of a plasma generation device including dielectric barrier discharge; comprising the following steps: performing crimping bonding on a to-be-bonded base material of a silicon wafer or a glass sheet; comprising the following steps: performing a first cooling step on a to-be-bonded base material of a silicon wafer or a glass sheet; and executing a second cooling step on the to-be-bonded base material of the silicon wafer or the glass sheet. And the problems of base material deformation, grain growth and over-thick interface diffusion layer caused by high temperature are avoided.

The invention relates to the technical field of electronic device manufacturing, in particular to an anodic bonding device and an anodic bonding technology.According to the technical scheme, the anodic bonding device comprises a bonding cavity, a device outer frame is arranged outside the bonding cavity, a transmission mechanism is arranged at the upper end of the device outer frame, and an upper disc assembly is arranged at the lower end of the transmission mechanism; a lower disc assembly is arranged at the lower end of the device outer frame, a first vacuum electrode and a second vacuum electrode are arranged at the upper end of the device outer frame, the upper end of the first vacuum electrode is connected with a first switch, and the second vacuum electrode is downwards connected with a second switch. By adopting the device outer frame and the multiple assemblies, a compact structure is formed, external interference is reduced, the stability of the bonding process is improved, the stability of a silicon substrate grounding path can be ensured through connection of the third vacuum electrode and the lower disc assembly, the influence of contact resistance fluctuation on bonding current is reduced, and therefore the bonding quality controllability is improved.