72 results about "Anodic bonding" patented technology

The invention relates to the field of pressure sensors, in particular to a pressure sensor and a processing method, and a chip comprises a silicon substrate, a silicon dioxide dielectric layer, a device layer, a metal electrode and packaging glass. The device layer comprises a silicon carbide single crystal device layer and a silicon device layer; the silicon carbide single crystal device layer is arranged on the silicon device layer; the silicon device layer, the silicon dioxide dielectric layer and the silicon substrate are connected in sequence; the device layer is etched to form a sensitive resistor device layer, an annular sealing region and a micro-channel; the sensitive resistance device layer is isolated from the annular sealing area through the micro-channel; the device layer, the silicon dioxide dielectric layer and the silicon substrate are etched to form a cross beam etching area; the silicon substrate is etched to form a silicon pressure cavity and a beam film; the metal electrode is arranged on the top of the device layer; and the packaging glass anode is bonded at the top of the device layer or the bottom of the silicon substrate so as to solve the problems of low high temperature resistance and low sensitivity of the MEMS pressure sensor.

The invention relates to the technical field of terahertz metamaterial biosensors, in particular to a light and dark mode coupled terahertz all-dielectric biosensor and a preparation method thereof. The all-dielectric metamaterial biosensor is obtained through anodic bonding, photoetching patterning, etching and specific antibody modification, the sensor comprises a dielectric layer and a substrate layer, the dielectric layer is an array formed by alternating split ring structures and rod-shaped structures of all-dielectric metamaterials, openings are symmetrically formed in the two ends of each split ring structure, and the rod-shaped structures of all-dielectric metamaterials are arranged on the substrate layer. The distances between the rod-shaped structure and the split ring structures on the left side and the right side are u and v respectively, and v-u is larger than or equal to 1 micrometer and smaller than or equal to 5 micrometers. In the dielectric layer of the sensor, the rod-shaped structure is used as a bright mode, the split ring structure is used as a dark mode, and the two arrays interact with each other, so that light and dark mode coupling is realized, a harmonic peak is split, a Q factor and sensitivity are increased, and the sensor has the effects of high sensitivity and low detection limit on low-concentration biological sample detection in a terahertz wave band; and the method is stable and reliable.

The application provides a pressure sensor and an electronic device, wherein the pressure sensor comprises: a differential pressure sensor, a first substrate and a second substrate which are sequentially stacked; a third substrate in the differential pressure sensor is connected with the first substrate through anode bonding to form an absolute pressure sensor; the first substrate has a first through hole penetrating a thickness direction; the second substrate has a second through hole penetrating the thickness direction, and an electronic element is arranged on a side of the second substrate away from the first substrate; and the electronic element is electrically connected with the differential pressure sensor through the second through hole and the first through hole in sequence.

The present invention relates to a microfluidic chip for an inhalation sprayer. A semi-closed internal cavity is formed by a silicon wafer 1 and a glass sheet 2 by means of anodic bonding, and comprises an inlet end 3 and an outlet end 4; the outlet end comprises a left outlet 41 and a right outlet 42, the left outlet and the right outlet being axisymmetric with respect to the central axis X of the microfluidic chip, and the axis Y of the left outlet and the axis Y' of the right outlet jointly meeting the central axis X at a point A; the outlet end comprises a cutting start line U0, the vertical distance from the point A to the cutting start line U0 being L; the outlet end further comprises a cutting buffer line U1, a fluid in the microfluidic chip being ejected from the cutting buffer line U1, the vertical distance from the cutting buffer line U1 to the cutting start line U0 being a cutting buffer distance L', and L'≤L, so as to ensure that the fluid collides and sprays outside the chip; moreover, the cutting buffer distance can protect the integrity of the outlet end when the microfluidic chip is cut, thus improving the overall quality and yield of microfluidic chips, and reducing costs.

The invention discloses an in-plane three-axis large-displacement actuating platform based on MEMS and a manufacturing method thereof.The in-plane three-axis large-displacement actuating platform mainly comprises an outer frame, a cross island frame, a bidirectional comb-shaped driving unit, a long spring beam and a short spring beam, and the manufacturing method comprises the steps that a cavity structure on a glass substrate is anisotropically etched through magnetic neutral loop discharge plasma (NLD); the method comprises the following steps of: bonding a BF33 glass wafer with a cavity structure with a low-resistance silicon wafer by using an anodic bonding process, thinning the low-resistance silicon wafer, performing deep silicon etching (DRIE) on the low-resistance silicon wafer to form an electrical isolation channel and filling a BCB material, removing the BCB on the surface of the low-resistance silicon wafer by using a chemical mechanical polishing (CMP) process, sputtering a metal layer and forming a lead layer by using a lift-off process, and performing deep silicon etching (DRIE) on the low-resistance silicon wafer to form a final device. The method has the beneficial effects that the filling rate of the device is improved, the size is reduced, the structural rigidity, the response speed, the resonant frequency and the heat dissipation performance are improved, and meanwhile, a routing method for heterogeneously integrating the micro-motion platform and the CMOS chip is provided.

The invention discloses an anodic bonding method of a polyurethane-based elastomer and glass. The method comprises a raw material surface cleaning process, a raw material surface activation process, a pre-connection process and an anodic bonding process. According to the anodic bonding method for the polyurethane-based elastomer and the glass, the anodic bonding connection performance is stable, the application range of the polymer elastomer is wide, and effective connection of the polyurethane-based elastomer and the glass sheet is achieved for the first time. The polymer elastomer is not damaged at low temperature, a bonding layer with a certain width and uniform distribution can be ensured, and the bonding strength can reach 0.95 MPa to 2.75 MPa.

This invention relates to the field of semiconductor technology, providing a wafer-level packaging method and structure. The method includes: providing a MEMS suspended structure and a cover plate structure; etching trenches and electrode patterns on the bonding surface of the cover plate structure; directly bonding the MEMS suspended structure and the cover plate structure; etching the front side of the cover plate structure to achieve trench penetration; bonding the cover plate structure to a glass anode to form a glass sealing layer; melting the glass of the glass sealing layer at high temperature and reflowing it into the trenches to form an electrode isolation layer that isolates the through-penetrating electrodes; and thinning and polishing the glass sealing layer. This invention utilizes direct bonding technology combined with a glass reflow scheme to achieve wafer-level packaging of chips. The glass, as an isolation and sealing material, exists only in extremely fine trenches, solving the problem of poor temperature performance and low temperature linearity of devices caused by thermal stress mismatch when other materials are introduced.

The present invention discloses an integrated Fabry-Perot MEMS acceleration sensitive chip processing method, comprising the following steps: firstly, wet etching is used to make a cavity depth reference groove, the cavity is etched on a silicon wafer with the groove as a reference, and silicon oxide and silicon nitride films are repeatedly and alternately deposited on the cavity surface to make an optical anti-reflection film; then silicon oxide and silicon nitride films are repeatedly and alternately deposited on the surface of a glass wafer, and an optical anti-reflection film is formed by patterning; then silicon and glass wafers are anodically bonded, and the silicon wafer is thinned to a target thickness; finally, deep reactive ion etching technology is used to release the spring mass structure. The present invention can avoid the problem of residual stress in the prior art of etching first and then bonding, which causes deformation or damage of the sensitive chip, and has the advantages of simple process and high yield rate; in addition, thanks to the cavity depth reference groove step, it can ensure that the manufactured sensitive chip works in a high sensitivity state.

This invention provides a multifunctional, compact, and high-precision pressure measurement device. The pressure-sensing module of the device employs a MEMS pressure core, with its core being an SOI (silicon-on-insulator) piezoresistive chip. The chip uses a flip-chip structure: the front side of the chip (the side with the piezoresistive circuitry) is fused to a glass cover plate wafer via anodic bonding or glass powder sintering, forming a sealed reference vacuum chamber or atmospheric reference chamber. The back side of the chip serves as the pressure-sensing surface, directly or through a pressure-transmitting medium contacting the pressure being measured. This device is suitable for miniaturized applications in high-temperature, high-pressure, small-volume, and strong electromagnetic interference environments.

The invention relates to the technical field of MEMS (Micro Electro Mechanical System) manufacturing, in particular to a dynamic voltage control method for an anodic bonding process, which comprises the following steps of: setting an initial voltage value to be 50-70% of a fixed voltage value, and monitoring a bonding interface resistance value, interface temperature field distribution and local stress change in real time; fuzzy PID and sliding mode variable structure control are fused, control parameters are dynamically adjusted according to current density deviation and temperature overshoot, voltage output ripples are made to be smaller than + / -0.5%, if the local temperature of an electrode exceeds 90% of a material tolerance threshold value, a reverse voltage pulse sequence is activated, and if the local temperature of the electrode exceeds 90% of the material tolerance threshold value, voltage level response is carried out; according to the invention, through multi-mode feedback monitoring and layered dynamic regulation and control, the voltage can be adjusted in real time, and uneven current distribution and local overheating are avoided, so that the risk of electrode burnout is remarkably reduced, and the bonding reliability is improved.

The invention discloses an anodic bonding positioning device and a use method thereof in the technical field of microelectronic manufacturing. The anodic bonding positioning device comprises a frame, a bonding positioning mechanism and a material conveying mechanism, the bonding positioning mechanism comprises a heating disc, a bonding pressing gun, a pressing gun push rod, a pressing gun cam, a rotating rod, a rotating rod supporting column, a baffle cam, a baffle push rod and a positioning baffle. The rotating rod penetrates through the axes of the pressing gun cam and the baffle cam and is fixedly connected with the pressing gun cam and the baffle cam, the phase difference between the pressing gun cam and the baffle cam is 180 degrees, the rotating rod supporting column is installed on the frame and used for supporting the rotating rod, the pressing gun push rod is connected with the bonding pressing gun, the pressing gun push rod is matched with the pressing gun cam, and the pressing gun cam is fixedly connected with the pressing gun cam. And the baffle push rod is matched with the baffle cam. According to the anodic bonding positioning device and the using method thereof, collaborative continuous production of all steps can be achieved, and the anodic bonding positioning device is simple in structure, low in maintenance cost and suitable for packaging requirements of different sizes.

The invention discloses an MEMS (Micro Electro Mechanical System) thermal acceleration sensor for realizing wafer-level packaging by utilizing a silicon structure in glass and a preparation method. The sensor adopts a three-layer stacked structure, and comprises a silicon sealing cover in glass, an acceleration sensor body and a sealing laminated wafer. Wherein a silicon conductive through column which is electrically insulated from the glass medium is arranged in the glass-in-silicon sealing cover, so that electric signal transmission in the vertical direction is realized; the acceleration sensor body comprises a heating and temperature measuring module manufactured on a supporting layer; the sealing bonding wafer and the sealing cover jointly form a sealed cavity to package the working fluid. The preparation method comprises the following steps: preparing a silicon-in-glass sealing cover through two times of deep silicon etching, anodic bonding and a glass backflow process, manufacturing a sensor functional structure on a silicon substrate and forming a back cavity, and finally completing wafer-level integrated packaging through a surface mounting process. The wafer-level batch preparation and packaging complete solution of the thermal acceleration sensor is realized, and the problems of high packaging cost and low efficiency of a non-standard process are solved.

The present invention provides an atomic beam collimator and a manufacturing method thereof. The manufacturing method comprises: providing a silicon substrate, etching a first groove structure parallel to each other on a first surface in a thickness direction of the silicon substrate; providing a first supporting layer, anodically bonding the first supporting layer to the first surface in a thickness direction of the silicon substrate to form a stacked body; and cutting the stacked body to obtain an atomic beam collimator; wherein the first groove structure located between the silicon substrate and the first supporting layer serves as a first microchannel of the atomic beam collimator.

The invention discloses a polyurethane-based elastomer anode material suitable for anodic bonding, which is prepared by the following steps: preparing a prepolymer component A based on oligomer polyol, diisocyanate and a conductive polymer, mixing and stirring a chain extender, a cross-linking agent, a catalyst and the conductive polymer to prepare a prepolymer component B, and uniformly mixing the prepolymer component A and the prepolymer component B to prepare the polyurethane-based elastomer anode material suitable for anodic bonding. And pouring the mixture into a mold coated with a release agent for curing to obtain the polyurethane-based elastomer anode material. The polyurethane-based elastomer anode material disclosed by the invention can be bonded with a glass anode, so that the problem of permanent connection between an intermediate polymer and glass on two sides of laminated glass is solved.

The invention discloses an MEMS ionization vacuum sensor based on magnetic field assistance and a manufacturing method thereof, and belongs to the technical field of microelectronics. The sensor comprises a glass substrate, an emitter electrode, a lead electrode, an electron emitter, a first insulating spacer layer, a grid electrode, a second insulating spacer layer, top glass, an ion deflection electrode, an ion collector, an annular electrode and a magnetic field generation part, the manufacturing method comprises the steps of preparation of the substrate and the top glass, bonding of the electron emitter, processing of the insulating spacer layer and the grid electrode, anodic bonding, laser bonding, installation of the magnetic field component and scribing. An electric field-magnetic field composite field is used for remarkably expanding the electron motion trail, the problems that an existing sensor is weak in ion flow and poor in anti-interference capacity are solved by combining the physical isolation design of an ionization and collection area, and the sensor has the advantages of being small in size, high in precision, good in consistency and low in cost and is suitable for the fields of semiconductor manufacturing and aerospace.

The invention provides an anodic bonding method, and belongs to the technical field of anodic bonding. The method comprises the steps that a first substrate and a second substrate are provided, and the first substrate is a silicon-based substrate with a multi-layer structure and comprises a dielectric layer and a silicon layer formed on the dielectric layer; the first substrate and the second substrate are aligned in the vertical direction, so that the silicon layer of the first substrate faces the to-be-deposited surface of the second substrate, and a preset distance is formed between the silicon layer and the to-be-deposited surface of the second substrate; performing vacuum ion activation on the first substrate to enable the silicon atoms to be in an activated state so as to enable the silicon atoms to be deposited on the to-be-deposited surface of the second substrate, and forming a silicon thin film on the surface of the second substrate; laminating the first substrate and the second substrate on which the silicon thin film is formed to obtain a pre-bonding structure; and carrying out bonding treatment on the pre-bonding structure by adopting an anodic bonding process. According to the method, the problem that the bonding strength is reduced due to the electric field shielding effect when the existing anodic bonding technology faces a multi-layer silicon-based structure containing a dielectric layer is solved, and the anodic bonding quality is effectively improved.

A silicon chip 1 and a glass sheet 2 form a semi-closed inner cavity through anodic bonding, the micro-fluidic chip comprises an inlet end 3 and an outlet end 4, the outlet end comprises a left outlet 41 and a right outlet 42, and the left outlet and the right outlet are in axial symmetry relative to the central axis X of the micro-fluidic chip. The axis Y of the left outlet, the axis Y'of the right outlet and the central axis X intersect at a point A. The outlet end comprises a cutting starting line U0, the vertical distance between the point A and the cutting starting line U0 is L, the outlet end further comprises a cutting buffer line U1, and fluid in the micro-fluidic chip is sprayed out from the cutting buffer line U1. The vertical distance from the cutting buffer line U1 to the cutting start line U0 is a cutting buffer distance L ', and L' is less than or equal to L, so that the fluid is ensured to collide and spray outside the chip, the cutting buffer distance protects the integrity of the outlet end when the micro-fluidic chip is cut, the overall quality and yield of the micro-fluidic chip are improved, and the cost is reduced.

The present invention discloses a terahertz wide-angle broadband meta-lens and a preparation method thereof. The meta-lens comprises a substrate and a meta-unit on the substrate, wherein a plurality of meta-units are evenly arranged on the substrate; the meta-units comprise five types: cylindrical structure, circular ring structure, square column structure, cross structure, and square ring structure; by changing the proportions of the five types of meta-units, the phase, dispersion phase, and transmittance of the meta-unit at the center frequency are obtained. The design method is as follows: first, a "phase-dispersion" unit library is constructed; then, based on the corrected quadratic aspheric phase profile formula, group delay formula, and unit simulated transmittance, appropriate units are selected to arrange the meta-lens. The preparation method is as follows: first, silicon wafer-glass anodic bonding is performed, followed by exposure and development, and finally deep silicon etching is performed. The meta-lens prepared by the present invention has the advantages of planarization, polarization insensitivity, the ability to achieve convergence within a large field of view and broadband, and stable focal length.

The present invention relates to a method and device for preparing a wafer-level alkali metal gas chamber. The method comprises preparing a pre-gas chamber wafer unit, depositing an alkali metal in a corresponding gas chamber hole groove, and after depositing the required alkali metal in the gas chamber hole groove, cooling the pre-gas chamber wafer unit to room temperature; providing a gas chamber packaging wafer, and performing low-temperature pre-bonding on the gas chamber packaging wafer and the pre-gas chamber wafer unit cooled to room temperature, so that after the low-temperature pre-bonding, the gas chamber hole groove in the pre-gas chamber wafer unit is sealed with the gas chamber packaging wafer; performing high-temperature anodic bonding on the low-temperature bonded gas chamber packaging wafer and the pre-gas chamber wafer unit, wherein, during the high-temperature anodic bonding, the bonding gas pressure is in the background vacuum state of the molecular pump. The present invention can effectively realize the preparation of the alkali metal gas chamber, avoid the escape of the alkali metal due to high temperature, and at the same time ensure the bonding strength and improve the reliability of the prepared alkali metal gas chamber.

The invention discloses a chip packaging device and a using method thereof in the technical field of anodic bonding, chip positioning and chip packaging, and the chip packaging device comprises a machine body module, a bonding module, a feeding module, a discharging module, a transmission module and a driving module, when a chip is packaged, raw materials are fed through the feeding module and then conveyed to the bonding module for bonding, and the driving module is used for driving the bonding module to carry out chip packaging; then, the materials are conveyed to the discharging module for discharging; the output end of the driving module is connected with the bonding module to drive the bonding module to work, and the driving module drives the feeding module and the discharging module to work through the transmission effect of the transmission module. The chip packaging device provided by the invention is simple in structure, low in cost and good in stability, can realize automation of the whole process of feeding, positioning, bonding and discharging, and improves the production efficiency.

The present invention provides a wafer-level bonding method for SOI silicon wafer and glass, characterized in that it includes the following steps: 1) taking SOI silicon wafer and glass wafer; 2) cleaning SOI silicon wafer and glass wafer; 3) bonding SOI silicon wafer and glass wafer together, and exposing part of bonding layer of SOI silicon wafer outside glass wafer; 4) connecting glass wafer with negative pole of power supply, connecting bonding layer with positive pole of power supply, and connecting device layer with zero position of power supply. The present invention is simple to operate and has simple steps. It is unnecessary to consider the thickness of insulating buried layer of SOI silicon wafer and the ion distribution of device layer of SOI silicon wafer is not affected by anodic bonding, and bonding voltage will not break down insulating buried layer of SOI silicon wafer.

This invention relates to a microfluidic chip for an inhalation sprayer, comprising a silicon wafer 1 and a glass sheet 2 bonded together by anodic bonding to form a semi-enclosed internal cavity, including an inlet end 3 and an outlet end 4. The outlet end includes a left outlet 41 and a right outlet 42, which are axially symmetrical with respect to the central axis X of the microfluidic chip. The axis Y of the left outlet and the axis Y' of the right outlet intersect the central axis X at point A. The outlet end includes a cutting start line U0, and the vertical distance from point A to the cutting start line U0 is L. The outlet end also includes a cutting buffer line U1, from which fluid inside the microfluidic chip is ejected. The vertical distance from the cutting buffer line U1 to the cutting start line U0 is the cutting buffer distance L', where L' ≤ L, to ensure that the fluid collides and sprays outside the chip. The cutting buffer distance protects the integrity of the outlet end during microfluidic chip cutting, improving the overall quality and yield of the microfluidic chip and reducing costs.

This invention belongs to the field of optical device technology. It proposes a MEMS micromirror structure and packaging method. The structure mainly includes the design and fabrication of a chip substrate, a glass cover, a getter, and a thermally conductive layer. A CMOS circuit and a movable micromirror array structure are fabricated on an SOI wafer structure layer. The glass cover is connected to the SOI wafer support layer via anodic bonding to achieve hermetically sealed packaging of the micromirror array. An AlN thin film is deposited on the back side of the substrate, and TSV technology is used to lead wires from the back side of the SOI wafer. This scheme uses the buried oxide layer of the SOI wafer to isolate the substrate layer from the micromirror array and CMOS circuit, avoiding the impact of high voltage on device performance and ensuring compatibility with CMOS processes. The back-side AlN thin film deposition improves heat dissipation during the process and device operation. Furthermore, the wafer-level packaging process offers advantages such as simple process, low cost, and ease of mass production.

The application discloses a MEMS-based in-plane three-axis large displacement actuating platform and a manufacturing method thereof, mainly comprising an outer frame, a cross island frame, a bidirectional comb-shaped driving unit, a long spring beam and a short spring beam, and manufacturing steps comprise: using magnetic neutral loop discharge plasma (NLD) to anisotropically etch a cavity structure on a glass substrate, using an anode bonding process to bond a BF33 glass wafer with the cavity structure and a low-resistance silicon wafer, thinning the low-resistance silicon wafer, deep silicon etching (DRIE) the low-resistance silicon wafer to form an electrically isolated channel and fill BCB material, using a chemical mechanical polishing (CMP) process to remove the BCB on the surface of the low-resistance silicon wafer, sputtering a metal layer and using a lift-off process to form a wire layer, and deep silicon etching (DRIE) the low-resistance silicon wafer to form a final device. The application has the beneficial effects of improving device filling rate, reducing size, improving structural stiffness, response speed, resonance frequency and heat dissipation performance, and simultaneously providing a wire bonding method for heterogeneously integrating a micro moving platform and a CMOS chip.

This invention discloses a semi-flexible sealed composite material beam-membrane-island structure for micro / nano devices and its fabrication method. The invention employs both rigid and flexible materials to construct the beam-membrane-island structure of the micro / nano device. The beam and island structures are made of rigid materials that can be fabricated in micro / nano dimensions, while flexible materials fill the periphery of the beam and island structures. The flexible filling layer acts as a "displacement coordination layer," ensuring a clear mechanical response while maintaining the high modulus of the silicon beam. Simultaneously, the local deformation of the flexible layer absorbs lateral coupling stress, allowing strain fields in different directions to be separated and amplified in the beam / island region. The flexible material forms a stress transition zone between the beam and island, preventing strong stress concentration in the pure silicon beam-island structure under concentrated loads. This invention still uses materials compatible with micro / nano fabrication processes as the main structural material, enabling integration with standard photolithography, reactive ion etching, deep silicon reactive ion etching, anodic bonding processes, through-silicon vias (TSVs), and glass vias, among other micro / nano processes.

The application discloses a kind of semi-flexible sealing composite beam membrane island structure formula micro-nano device and its processing method.The application uses hard material and flexible material to constitute the beam membrane island structure of micro-nano device, wherein the hard material that can be micro-nano processed is used in beam structure and island structure, and flexible material is filled in the periphery of beam structure and island structure.Flexible filling layer plays the role of "displacement coordination layer", and by the local deformation of flexible layer, transverse coupling stress is absorbed, so that strain field in different directions is separated and enlarged in beam / island area.Flexible material forms stress transition zone between beam and island, to avoid strong stress concentration of pure silicon beam island structure under concentrated load.The application still uses material compatible with micro-nano processing technology as main structure material, and can be integrated with standard photolithography, reactive ion etching, deep silicon reactive ion etching and anodic bonding process, through silicon via, through glass via and other micro-nano processes.

The invention provides a preparation process of an absolute pressure sensor with a silicon-silicon bonding structure. The preparation process comprises the following steps: step 1, arranging a pressure sensing cavity, a flow channel position, a channel and a lower electrode position on a double-parabolic silicon wafer; 2, arranging a partition channel, an upper electrode position photoetching pattern and a deep cavity photoetching pattern on the SOI silicon wafer; step 3, carrying out anodic bonding on the double-polished silicon wafer in the step 1 and the SOI silicon wafer in the step 2; step 4, bonding the double-polished silicon wafer in the step 3 with a glass anode; step 5, arranging a deep cavity and an upper electrode position on the SOI silicon wafer; step 6, cutting the glass; meanwhile, the invention also provides an absolute pressure sensor of a silicon-silicon bonding structure, and the absolute pressure sensor is prepared by adopting a preparation process. According to the preparation process, air in the pressure sensing cavity can be pumped out by arranging the channel, the vacuum pressure sensor structure with the high vacuum degree is arranged in the pressure sensing cavity, the partition channel is arranged, thin films outside the pressure sensing film are partitioned, stray capacitance is reduced, and the testing precision of the sensor is improved.

The utility model relates to the technical field of anodic bonding, in particular to a high-coaxiality anodic bonding clamp, which is characterized in that a plurality of groups of positioning columns are mounted on the peripheral side of a base, and an epitaxial wafer pressurizing sheet, an epitaxial wafer limiting sheet, a workpiece limiting disc and an upper insulating disc are sequentially inserted and sleeved on the corresponding positioning columns through a plurality of groups of positioning holes distributed on the peripheral side of the upper insulating disc; an epitaxial wafer is placed in an inner ring of an epitaxial wafer limiting piece, the bottom face of the epitaxial wafer is in contact with an epitaxial wafer pressurizing piece, then an AVG glass plate is placed in an inner ring of a workpiece limiting disc and pressed on the top face of the epitaxial wafer, a graphite pressurizing disc is placed between an upper insulating disc and the AVG glass plate, and a downward pressing guide disc is placed in the center of the upper side of the upper insulating disc. The steel ball is placed in a guide cylinder formed at the top of the downward pressing guide disc; the grounding pin penetrates through the upper insulating disc and is in contact with the graphite pressurizing disc; and the positive electrode power connection sleeve sleeves the top ends of the positioning columns. The fixture ensures the coaxiality between the AVG glass plate and the epitaxial wafer through the workpiece limiting disc and the epitaxial wafer limiting piece, and ensures the overall coaxiality of the fixture through the positioning column.

The utility model discloses a refrigeration structure and a packaging structure of a two-dimensional array type silicon detector. The refrigeration structure comprises a silicon-based bottom plate, a silicon-based splitter plate, a cover plate and two water receiving pipes. A first layer of micro-channel is formed between the silicon-based bottom plate and the silicon-based splitter plate through a silicon-silicon bonding process; the silicon-based splitter plate and the cover plate form a second-layer micro-channel through anodic bonding, and the second-layer micro-channel is used for distributing the inflow cooling medium and receiving the backflow cooling medium for each channel in the first-layer micro-channel; the two water receiving pipes are connected with the cooling medium input port and the cooling medium output port in the cover plate respectively and used for providing circulating cooling media for the micro-channel radiator. The refrigeration structure aims to reduce detection dead zones among the modules in the detector and realize efficient and uniform refrigeration of the detector modules.

The application discloses an anodic bonding method for analyzing crystals, which comprises the following steps: S1, wet cleaning a substrate; S2, plasma cleaning the substrate and a single crystal wafer after wet cleaning; and S3, bonding the single crystal wafer after plasma cleaning to the substrate through anodic bonding. The application combines wet cleaning and plasma cleaning to obtain clean silicon wafers and borosilicate glass substrates without dust and hydrocarbon contamination in an atmospheric environment of a common laboratory. Subsequently, a common anodic bonding device can be used to obtain an analysis crystal without air bubbles. The method of the application can be applied to the manufacture of spherical crystals, and also includes the manufacture of planar, cylindrical, toroidal, ellipsoidal and other quadratic or multiple function curved surface crystals. The radius of curvature covers 180 mm to 2 m.