45 results about "Anodic bonding" patented technology

The application provides a pressure sensor and an electronic device, wherein the pressure sensor comprises: a differential pressure sensor, a first substrate and a second substrate which are sequentially stacked; a third substrate in the differential pressure sensor is connected with the first substrate through anode bonding to form an absolute pressure sensor; the first substrate has a first through hole penetrating a thickness direction; the second substrate has a second through hole penetrating the thickness direction, and an electronic element is arranged on a side of the second substrate away from the first substrate; and the electronic element is electrically connected with the differential pressure sensor through the second through hole and the first through hole in sequence.

The present invention relates to a microfluidic chip for an inhalation sprayer. A semi-closed internal cavity is formed by a silicon wafer 1 and a glass sheet 2 by means of anodic bonding, and comprises an inlet end 3 and an outlet end 4; the outlet end comprises a left outlet 41 and a right outlet 42, the left outlet and the right outlet being axisymmetric with respect to the central axis X of the microfluidic chip, and the axis Y of the left outlet and the axis Y' of the right outlet jointly meeting the central axis X at a point A; the outlet end comprises a cutting start line U0, the vertical distance from the point A to the cutting start line U0 being L; the outlet end further comprises a cutting buffer line U1, a fluid in the microfluidic chip being ejected from the cutting buffer line U1, the vertical distance from the cutting buffer line U1 to the cutting start line U0 being a cutting buffer distance L', and L'≤L, so as to ensure that the fluid collides and sprays outside the chip; moreover, the cutting buffer distance can protect the integrity of the outlet end when the microfluidic chip is cut, thus improving the overall quality and yield of microfluidic chips, and reducing costs.

The invention discloses an anodic bonding method of a polyurethane-based elastomer and glass. The method comprises a raw material surface cleaning process, a raw material surface activation process, a pre-connection process and an anodic bonding process. According to the anodic bonding method for the polyurethane-based elastomer and the glass, the anodic bonding connection performance is stable, the application range of the polymer elastomer is wide, and effective connection of the polyurethane-based elastomer and the glass sheet is achieved for the first time. The polymer elastomer is not damaged at low temperature, a bonding layer with a certain width and uniform distribution can be ensured, and the bonding strength can reach 0.95 MPa to 2.75 MPa.

This invention relates to the field of semiconductor technology, providing a wafer-level packaging method and structure. The method includes: providing a MEMS suspended structure and a cover plate structure; etching trenches and electrode patterns on the bonding surface of the cover plate structure; directly bonding the MEMS suspended structure and the cover plate structure; etching the front side of the cover plate structure to achieve trench penetration; bonding the cover plate structure to a glass anode to form a glass sealing layer; melting the glass of the glass sealing layer at high temperature and reflowing it into the trenches to form an electrode isolation layer that isolates the through-penetrating electrodes; and thinning and polishing the glass sealing layer. This invention utilizes direct bonding technology combined with a glass reflow scheme to achieve wafer-level packaging of chips. The glass, as an isolation and sealing material, exists only in extremely fine trenches, solving the problem of poor temperature performance and low temperature linearity of devices caused by thermal stress mismatch when other materials are introduced.

This invention provides a multifunctional, compact, and high-precision pressure measurement device. The pressure-sensing module of the device employs a MEMS pressure core, with its core being an SOI (silicon-on-insulator) piezoresistive chip. The chip uses a flip-chip structure: the front side of the chip (the side with the piezoresistive circuitry) is fused to a glass cover plate wafer via anodic bonding or glass powder sintering, forming a sealed reference vacuum chamber or atmospheric reference chamber. The back side of the chip serves as the pressure-sensing surface, directly or through a pressure-transmitting medium contacting the pressure being measured. This device is suitable for miniaturized applications in high-temperature, high-pressure, small-volume, and strong electromagnetic interference environments.

The invention discloses an anodic bonding positioning device and a use method thereof in the technical field of microelectronic manufacturing. The anodic bonding positioning device comprises a frame, a bonding positioning mechanism and a material conveying mechanism, the bonding positioning mechanism comprises a heating disc, a bonding pressing gun, a pressing gun push rod, a pressing gun cam, a rotating rod, a rotating rod supporting column, a baffle cam, a baffle push rod and a positioning baffle. The rotating rod penetrates through the axes of the pressing gun cam and the baffle cam and is fixedly connected with the pressing gun cam and the baffle cam, the phase difference between the pressing gun cam and the baffle cam is 180 degrees, the rotating rod supporting column is installed on the frame and used for supporting the rotating rod, the pressing gun push rod is connected with the bonding pressing gun, the pressing gun push rod is matched with the pressing gun cam, and the pressing gun cam is fixedly connected with the pressing gun cam. And the baffle push rod is matched with the baffle cam. According to the anodic bonding positioning device and the using method thereof, collaborative continuous production of all steps can be achieved, and the anodic bonding positioning device is simple in structure, low in maintenance cost and suitable for packaging requirements of different sizes.

The invention discloses an MEMS (Micro Electro Mechanical System) thermal acceleration sensor for realizing wafer-level packaging by utilizing a silicon structure in glass and a preparation method. The sensor adopts a three-layer stacked structure, and comprises a silicon sealing cover in glass, an acceleration sensor body and a sealing laminated wafer. Wherein a silicon conductive through column which is electrically insulated from the glass medium is arranged in the glass-in-silicon sealing cover, so that electric signal transmission in the vertical direction is realized; the acceleration sensor body comprises a heating and temperature measuring module manufactured on a supporting layer; the sealing bonding wafer and the sealing cover jointly form a sealed cavity to package the working fluid. The preparation method comprises the following steps: preparing a silicon-in-glass sealing cover through two times of deep silicon etching, anodic bonding and a glass backflow process, manufacturing a sensor functional structure on a silicon substrate and forming a back cavity, and finally completing wafer-level integrated packaging through a surface mounting process. The wafer-level batch preparation and packaging complete solution of the thermal acceleration sensor is realized, and the problems of high packaging cost and low efficiency of a non-standard process are solved.

The invention discloses a polyurethane-based elastomer anode material suitable for anodic bonding, which is prepared by the following steps: preparing a prepolymer component A based on oligomer polyol, diisocyanate and a conductive polymer, mixing and stirring a chain extender, a cross-linking agent, a catalyst and the conductive polymer to prepare a prepolymer component B, and uniformly mixing the prepolymer component A and the prepolymer component B to prepare the polyurethane-based elastomer anode material suitable for anodic bonding. And pouring the mixture into a mold coated with a release agent for curing to obtain the polyurethane-based elastomer anode material. The polyurethane-based elastomer anode material disclosed by the invention can be bonded with a glass anode, so that the problem of permanent connection between an intermediate polymer and glass on two sides of laminated glass is solved.

The invention discloses an MEMS ionization vacuum sensor based on magnetic field assistance and a manufacturing method thereof, and belongs to the technical field of microelectronics. The sensor comprises a glass substrate, an emitter electrode, a lead electrode, an electron emitter, a first insulating spacer layer, a grid electrode, a second insulating spacer layer, top glass, an ion deflection electrode, an ion collector, an annular electrode and a magnetic field generation part, the manufacturing method comprises the steps of preparation of the substrate and the top glass, bonding of the electron emitter, processing of the insulating spacer layer and the grid electrode, anodic bonding, laser bonding, installation of the magnetic field component and scribing. An electric field-magnetic field composite field is used for remarkably expanding the electron motion trail, the problems that an existing sensor is weak in ion flow and poor in anti-interference capacity are solved by combining the physical isolation design of an ionization and collection area, and the sensor has the advantages of being small in size, high in precision, good in consistency and low in cost and is suitable for the fields of semiconductor manufacturing and aerospace.

The invention provides an anodic bonding method, and belongs to the technical field of anodic bonding. The method comprises the steps that a first substrate and a second substrate are provided, and the first substrate is a silicon-based substrate with a multi-layer structure and comprises a dielectric layer and a silicon layer formed on the dielectric layer; the first substrate and the second substrate are aligned in the vertical direction, so that the silicon layer of the first substrate faces the to-be-deposited surface of the second substrate, and a preset distance is formed between the silicon layer and the to-be-deposited surface of the second substrate; performing vacuum ion activation on the first substrate to enable the silicon atoms to be in an activated state so as to enable the silicon atoms to be deposited on the to-be-deposited surface of the second substrate, and forming a silicon thin film on the surface of the second substrate; laminating the first substrate and the second substrate on which the silicon thin film is formed to obtain a pre-bonding structure; and carrying out bonding treatment on the pre-bonding structure by adopting an anodic bonding process. According to the method, the problem that the bonding strength is reduced due to the electric field shielding effect when the existing anodic bonding technology faces a multi-layer silicon-based structure containing a dielectric layer is solved, and the anodic bonding quality is effectively improved.

A silicon chip 1 and a glass sheet 2 form a semi-closed inner cavity through anodic bonding, the micro-fluidic chip comprises an inlet end 3 and an outlet end 4, the outlet end comprises a left outlet 41 and a right outlet 42, and the left outlet and the right outlet are in axial symmetry relative to the central axis X of the micro-fluidic chip. The axis Y of the left outlet, the axis Y'of the right outlet and the central axis X intersect at a point A. The outlet end comprises a cutting starting line U0, the vertical distance between the point A and the cutting starting line U0 is L, the outlet end further comprises a cutting buffer line U1, and fluid in the micro-fluidic chip is sprayed out from the cutting buffer line U1. The vertical distance from the cutting buffer line U1 to the cutting start line U0 is a cutting buffer distance L ', and L' is less than or equal to L, so that the fluid is ensured to collide and spray outside the chip, the cutting buffer distance protects the integrity of the outlet end when the micro-fluidic chip is cut, the overall quality and yield of the micro-fluidic chip are improved, and the cost is reduced.

The invention discloses a chip packaging device and a using method thereof in the technical field of anodic bonding, chip positioning and chip packaging, and the chip packaging device comprises a machine body module, a bonding module, a feeding module, a discharging module, a transmission module and a driving module, when a chip is packaged, raw materials are fed through the feeding module and then conveyed to the bonding module for bonding, and the driving module is used for driving the bonding module to carry out chip packaging; then, the materials are conveyed to the discharging module for discharging; the output end of the driving module is connected with the bonding module to drive the bonding module to work, and the driving module drives the feeding module and the discharging module to work through the transmission effect of the transmission module. The chip packaging device provided by the invention is simple in structure, low in cost and good in stability, can realize automation of the whole process of feeding, positioning, bonding and discharging, and improves the production efficiency.

This invention relates to a microfluidic chip for an inhalation sprayer, comprising a silicon wafer 1 and a glass sheet 2 bonded together by anodic bonding to form a semi-enclosed internal cavity, including an inlet end 3 and an outlet end 4. The outlet end includes a left outlet 41 and a right outlet 42, which are axially symmetrical with respect to the central axis X of the microfluidic chip. The axis Y of the left outlet and the axis Y' of the right outlet intersect the central axis X at point A. The outlet end includes a cutting start line U0, and the vertical distance from point A to the cutting start line U0 is L. The outlet end also includes a cutting buffer line U1, from which fluid inside the microfluidic chip is ejected. The vertical distance from the cutting buffer line U1 to the cutting start line U0 is the cutting buffer distance L', where L' ≤ L, to ensure that the fluid collides and sprays outside the chip. The cutting buffer distance protects the integrity of the outlet end during microfluidic chip cutting, improving the overall quality and yield of the microfluidic chip and reducing costs.

This invention belongs to the field of optical device technology. It proposes a MEMS micromirror structure and packaging method. The structure mainly includes the design and fabrication of a chip substrate, a glass cover, a getter, and a thermally conductive layer. A CMOS circuit and a movable micromirror array structure are fabricated on an SOI wafer structure layer. The glass cover is connected to the SOI wafer support layer via anodic bonding to achieve hermetically sealed packaging of the micromirror array. An AlN thin film is deposited on the back side of the substrate, and TSV technology is used to lead wires from the back side of the SOI wafer. This scheme uses the buried oxide layer of the SOI wafer to isolate the substrate layer from the micromirror array and CMOS circuit, avoiding the impact of high voltage on device performance and ensuring compatibility with CMOS processes. The back-side AlN thin film deposition improves heat dissipation during the process and device operation. Furthermore, the wafer-level packaging process offers advantages such as simple process, low cost, and ease of mass production.

The application discloses a MEMS-based in-plane three-axis large displacement actuating platform and a manufacturing method thereof, mainly comprising an outer frame, a cross island frame, a bidirectional comb-shaped driving unit, a long spring beam and a short spring beam, and manufacturing steps comprise: using magnetic neutral loop discharge plasma (NLD) to anisotropically etch a cavity structure on a glass substrate, using an anode bonding process to bond a BF33 glass wafer with the cavity structure and a low-resistance silicon wafer, thinning the low-resistance silicon wafer, deep silicon etching (DRIE) the low-resistance silicon wafer to form an electrically isolated channel and fill BCB material, using a chemical mechanical polishing (CMP) process to remove the BCB on the surface of the low-resistance silicon wafer, sputtering a metal layer and using a lift-off process to form a wire layer, and deep silicon etching (DRIE) the low-resistance silicon wafer to form a final device. The application has the beneficial effects of improving device filling rate, reducing size, improving structural stiffness, response speed, resonance frequency and heat dissipation performance, and simultaneously providing a wire bonding method for heterogeneously integrating a micro moving platform and a CMOS chip.

This invention discloses a semi-flexible sealed composite material beam-membrane-island structure for micro / nano devices and its fabrication method. The invention employs both rigid and flexible materials to construct the beam-membrane-island structure of the micro / nano device. The beam and island structures are made of rigid materials that can be fabricated in micro / nano dimensions, while flexible materials fill the periphery of the beam and island structures. The flexible filling layer acts as a "displacement coordination layer," ensuring a clear mechanical response while maintaining the high modulus of the silicon beam. Simultaneously, the local deformation of the flexible layer absorbs lateral coupling stress, allowing strain fields in different directions to be separated and amplified in the beam / island region. The flexible material forms a stress transition zone between the beam and island, preventing strong stress concentration in the pure silicon beam-island structure under concentrated loads. This invention still uses materials compatible with micro / nano fabrication processes as the main structural material, enabling integration with standard photolithography, reactive ion etching, deep silicon reactive ion etching, anodic bonding processes, through-silicon vias (TSVs), and glass vias, among other micro / nano processes.

The application discloses a kind of semi-flexible sealing composite beam membrane island structure formula micro-nano device and its processing method.The application uses hard material and flexible material to constitute the beam membrane island structure of micro-nano device, wherein the hard material that can be micro-nano processed is used in beam structure and island structure, and flexible material is filled in the periphery of beam structure and island structure.Flexible filling layer plays the role of "displacement coordination layer", and by the local deformation of flexible layer, transverse coupling stress is absorbed, so that strain field in different directions is separated and enlarged in beam / island area.Flexible material forms stress transition zone between beam and island, to avoid strong stress concentration of pure silicon beam island structure under concentrated load.The application still uses material compatible with micro-nano processing technology as main structure material, and can be integrated with standard photolithography, reactive ion etching, deep silicon reactive ion etching and anodic bonding process, through silicon via, through glass via and other micro-nano processes.

The utility model relates to the technical field of anodic bonding, in particular to a high-coaxiality anodic bonding clamp, which is characterized in that a plurality of groups of positioning columns are mounted on the peripheral side of a base, and an epitaxial wafer pressurizing sheet, an epitaxial wafer limiting sheet, a workpiece limiting disc and an upper insulating disc are sequentially inserted and sleeved on the corresponding positioning columns through a plurality of groups of positioning holes distributed on the peripheral side of the upper insulating disc; an epitaxial wafer is placed in an inner ring of an epitaxial wafer limiting piece, the bottom face of the epitaxial wafer is in contact with an epitaxial wafer pressurizing piece, then an AVG glass plate is placed in an inner ring of a workpiece limiting disc and pressed on the top face of the epitaxial wafer, a graphite pressurizing disc is placed between an upper insulating disc and the AVG glass plate, and a downward pressing guide disc is placed in the center of the upper side of the upper insulating disc. The steel ball is placed in a guide cylinder formed at the top of the downward pressing guide disc; the grounding pin penetrates through the upper insulating disc and is in contact with the graphite pressurizing disc; and the positive electrode power connection sleeve sleeves the top ends of the positioning columns. The fixture ensures the coaxiality between the AVG glass plate and the epitaxial wafer through the workpiece limiting disc and the epitaxial wafer limiting piece, and ensures the overall coaxiality of the fixture through the positioning column.

The utility model discloses a refrigeration structure and a packaging structure of a two-dimensional array type silicon detector. The refrigeration structure comprises a silicon-based bottom plate, a silicon-based splitter plate, a cover plate and two water receiving pipes. A first layer of micro-channel is formed between the silicon-based bottom plate and the silicon-based splitter plate through a silicon-silicon bonding process; the silicon-based splitter plate and the cover plate form a second-layer micro-channel through anodic bonding, and the second-layer micro-channel is used for distributing the inflow cooling medium and receiving the backflow cooling medium for each channel in the first-layer micro-channel; the two water receiving pipes are connected with the cooling medium input port and the cooling medium output port in the cover plate respectively and used for providing circulating cooling media for the micro-channel radiator. The refrigeration structure aims to reduce detection dead zones among the modules in the detector and realize efficient and uniform refrigeration of the detector modules.

The application discloses an anodic bonding method for analyzing crystals, which comprises the following steps: S1, wet cleaning a substrate; S2, plasma cleaning the substrate and a single crystal wafer after wet cleaning; and S3, bonding the single crystal wafer after plasma cleaning to the substrate through anodic bonding. The application combines wet cleaning and plasma cleaning to obtain clean silicon wafers and borosilicate glass substrates without dust and hydrocarbon contamination in an atmospheric environment of a common laboratory. Subsequently, a common anodic bonding device can be used to obtain an analysis crystal without air bubbles. The method of the application can be applied to the manufacture of spherical crystals, and also includes the manufacture of planar, cylindrical, toroidal, ellipsoidal and other quadratic or multiple function curved surface crystals. The radius of curvature covers 180 mm to 2 m.

The invention provides a TGV technology-based MEMS sensor and a packaging method thereof. The TGV technology-based MEMS sensor comprises a grain layer and a glass-based RDL layer which are bonded; the crystal grain layer comprises an MEMS and an ASIC which are heterogeneously integrated, the crystal grain layer is subjected to surface PAD treatment and gold plating treatment, the crystal grain layer is bonded with an anode of the glass-based RDL layer through a surface PAD, and the MEMS and the ASIC are both prepared from a wide bandgap semiconductor material; the glass-based RDL layer comprises a single-layer metallization layer or a multi-layer metallization layer prepared based on a TGV process and an RDL process, and glass is used as a dielectric layer among the multi-layer metallization layers. According to the invention, chip-level integrated packaging can be carried out on each functional unit, various performances are considered, high impedance of an analog interface and miniaturization of a circuit volume are realized, and the use amount of discrete components is reduced.

This invention discloses a room-temperature self-sustaining vacuum zero-point energy array power generation device, belonging to the fields of quantum clean energy and micro-nano power generation technology. This invention solves the technical problems of traditional vacuum energy power generation, such as low efficiency, the need for vacuum pumps, the requirement for low-temperature superconductivity, energy recirculation, and the inability to output net power. The device consists of a permanently sealed vacuum Casimir trapping array, an asymmetric piezoelectric resonant amplification layer, a unilateral directional magnetic shielding energy-locking layer, and a room-temperature quantum rectification output layer. It utilizes silicon-glass anode bonding to achieve a 30-year long-term high vacuum. Through nano-spacing plates, room-temperature rectification, and a unidirectional energy-locking structure, it stably extracts vacuum zero-point energy and outputs net electrical energy under pump-free, cooling-free, and superconducting conditions. This invention can be mass-produced at the wafer level and can be stacked for expansion. A 1-square-meter module can output 280W to 650W net power. It has advantages such as zero fuel, zero emissions, long lifespan, self-sustainability, and applicability to all scenarios. It can be widely used in household power supply, industrial power, aerospace energy, and distributed power grids, and is a sustainable clean energy system that can be engineered and implemented.

This application discloses a miniaturized magnetometer gas chamber and its fabrication method. The gas chamber includes several sides, which are fabricated by anodic bonding and sealing. A first side and a second side are arranged opposite to each other. Metastable excitation coils are disposed on the first surfaces of both the first and second sides. Metal mirrors are disposed on the second surfaces of both the first and second sides. The second surfaces of both the first and second sides are located inside the gas chamber, which is filled with... 3 He; the dimensions of the air chamber are in millimeters. The embodiments of this application can improve the detection sensitivity and reliability of the magnetometer. This application can be widely applied in the field of magnetic field sensors.

The invention provides an adapter plate and a forming method thereof. The forming method of the adapter plate comprises the following steps: providing a glass substrate; forming a plurality of first through holes in the glass substrate; the plurality of first through holes extend into the glass substrate from the top surface of the glass substrate along a first direction; the first direction is the thickness direction of the glass substrate; forming a semiconductor layer filling the plurality of first through holes and covering the top surface of the glass substrate; forming a bonding layer between the semiconductor layer and the glass substrate through an anodic bonding process; forming a conductive structure in the semiconductor layer filling the first through hole; the conductive structure extends from a top surface of the semiconductor layer into the semiconductor layer along the first direction.

The invention discloses a wafer back-to-back anodic bonding method based on a separated bonding sucker, and relates to the technical field of wafer bonding. The separated bonding sucker comprises a bearing part and an annular adsorption part. The anodic bonding method comprises the following steps: providing a product wafer and a glass wafer; the adsorption mechanism is used for fixing the glass wafer, the annular adsorption piece is used for fixing and adsorbing the product wafer, and the optical alignment system is used for aligning the bonding surface of the glass wafer and the back of the product wafer; integrally transferring the product wafer and the glass wafer which are aligned to a bonding position of a bonding machine table; and controlling the glass wafer to move towards the product wafer, and applying a preset bonding condition to the product wafer and the glass wafer, so that the wafer back of the product wafer and the bonding surface of the glass wafer are subjected to anodic bonding. According to the anodic bonding method, on the premise that the alignment precision and the bonding strength are not affected, the risk that metal on the crystal face of the product wafer is crushed in the back-to-back anodic bonding process can be effectively reduced.

A method of producing a diffraction grating of borosilicate glass or barium borosilicate glass, the method comprising the steps of forming a grating on a surface of a silicon wafer the grating through the Bosch process; forming an oxide film on a surface of the grating by heating and exposure to water vapor of the silicon wafer; removing the oxide film using hydrofluoric acid; making the surface provided with the grating of the silicon wafer and a surface of a glass plate undergo anodic bonding; heating the silicon wafer and the glass plate bonded to each other; polishing a surface opposite to the boded surface of the silicon wafer and a surface opposite to the boded surface of the glass plate; and removing silicon from the glass plate by selective etching using xenon difluoride.

The invention relates to the technical field of opto-electro-mechanical and inertial navigation, and particularly discloses an opto-electro-mechanical single-shaft disc gyroscope with an optical cavity structure and a processing method thereof, and the opto-electro-mechanical single-shaft disc gyroscope sequentially comprises a glass cap, an opto-electro-mechanical single-shaft disc gyroscope device layer and a glass substrate from top to bottom, the glass cap and the glass substrate are bonded with the optical-mechanical-electrical single-shaft disc type gyroscope device layer through an anode; wherein the driving fixed comb teeth (24) are distributed at the 0-degree position, the 90-degree position, the 180-degree position and the 270-degree position of the whole device layer; the two-dimensional photonic crystal structure layers are distributed at the 45-degree position and the 225-degree position of the whole device layer; the whole disc structure sequentially comprises a disc type center mass block, a spring-like resonance beam, a connecting beam and a nested circular ring from inside to outside. One part of the two-dimensional photonic crystal structure is connected to the nested ring, and the other part of the two-dimensional photonic crystal structure is fixed outside the nested ring through anchor points. According to the invention, the angular velocity of a single shaft is measured in a single device, the structure is simple, and the implementation is easy.

The invention discloses a high-temperature and high-pressure temperature calibration type optical fiber Fabry-Perot acceleration sensor based on a composite cavity. The acceleration sensor is used for monitoring flow-induced vibration of a heat transfer tube of a pressurized water reactor steam generator in an environment of 350 DEG C and 17.5 MPa. The sensor comprises a packaging base, a gold-plated optical fiber, an optical fiber insertion core, a collimator tube, a spherical lens, a 45-degree dip angle metal reflector, a sensing chip and a sealing cover plate. The sensing chip is of a three-layer sealing structure and is formed by anodic bonding of a glass substrate and a silicon diaphragm; the silicon diaphragm is integrated with eight symmetrical hollow cantilever beams and a central mass block. The composite cavity comprises a vibration cavity (25 [mu] m) and a temperature cavity (400 [mu] m), and the end face of the optical fiber is not used as a reflecting surface, so that spatial separation and temperature compensation are realized. And the symmetrical cantilever beams reduce transverse crosstalk. And a light path is turned by 90 degrees through a 45-degree 4J29 reflecting mirror, and laser welding sealing is performed. The volume is 20 * 10 * 10 mm, the normal-temperature sensitivity is 4.53 nm / g, the inherent frequency is 7418.8 Hz, the transverse crosstalk is 0.281%, the resolution ratio is 4.4 mg, and the measuring range is + / -238 g; drift at the temperature of 350 DEG C and under the pressure of 17.5 MPa for 60 hours; the wavelength is 0.1 nm.

The invention provides an MEMS atomic clock air chamber and a preparation method thereof. The method comprises the following steps: selecting a silicon wafer, and etching the front surface of the silicon wafer to form a silicon groove structure; carrying out anodic bonding on the front surface of the silicon wafer etched with the silicon groove and a glass wafer; forming top glass and a glass optical window on the silicon wafer by adopting a glass backflow process, and flattening the upper surface of the top glass; photoetching and etching the back surface of the silicon wafer, etching a channel structure, and forming an optical cavity and an alkali metal placing groove; alkali metal is put in, anodic bonding is carried out on the face, where the channel structure is etched and the optical cavity is formed, of the glass wafer to package the optical cavity, and the alkali metal is activated. According to the invention, the novel on-chip MEMS atomic clock air chamber with the optical cavity with multiple reflection capability is constructed, so that the length of an optical path in the atomic clock air chamber can be obviously increased, and the interaction strength between light and alkali metal atoms is enhanced.

This invention belongs to the field of optical device technology and discloses a MEMS device and packaging method based on SU8 adhesive. The method includes a structural substrate and a packaging wafer anoly bonded by an SU8 adhesive bonding ring. The packaging wafer has grooves to form a moving microcavity. A getter is deposited within the moving microcavity of the packaging wafer. The moving microcavity also accommodates a movable MEMS structure disposed on the surface of the structural substrate. Chip pads and metal leads are laid on the outer side of the moving microcavity. The packaging wafer also has an anti-reflow groove located at one end of the packaging wafer near the SU8 adhesive bonding ring. This invention uses SU8 adhesive to fabricate a polymer bonding ring on a complex packaging wafer with a microcavity. By optimizing the SU8 adhesive pretreatment process and designing an anti-reflow structure, contamination of the device due to SU8 adhesive flow is avoided. Polymer wafer-level bonding is used to achieve MEMS device packaging, and chip separation is achieved through two dicing operations. This method has advantages such as low temperature, low stress, flexible process, and low cost.