14 results about "Anodic bonding" patented technology

The application provides a pressure sensor and an electronic device, wherein the pressure sensor comprises: a differential pressure sensor, a first substrate and a second substrate which are sequentially stacked; a third substrate in the differential pressure sensor is connected with the first substrate through anode bonding to form an absolute pressure sensor; the first substrate has a first through hole penetrating a thickness direction; the second substrate has a second through hole penetrating the thickness direction, and an electronic element is arranged on a side of the second substrate away from the first substrate; and the electronic element is electrically connected with the differential pressure sensor through the second through hole and the first through hole in sequence.

The present invention relates to a microfluidic chip for an inhalation sprayer. A semi-closed internal cavity is formed by a silicon wafer 1 and a glass sheet 2 by means of anodic bonding, and comprises an inlet end 3 and an outlet end 4; the outlet end comprises a left outlet 41 and a right outlet 42, the left outlet and the right outlet being axisymmetric with respect to the central axis X of the microfluidic chip, and the axis Y of the left outlet and the axis Y' of the right outlet jointly meeting the central axis X at a point A; the outlet end comprises a cutting start line U0, the vertical distance from the point A to the cutting start line U0 being L; the outlet end further comprises a cutting buffer line U1, a fluid in the microfluidic chip being ejected from the cutting buffer line U1, the vertical distance from the cutting buffer line U1 to the cutting start line U0 being a cutting buffer distance L', and L'≤L, so as to ensure that the fluid collides and sprays outside the chip; moreover, the cutting buffer distance can protect the integrity of the outlet end when the microfluidic chip is cut, thus improving the overall quality and yield of microfluidic chips, and reducing costs.

This invention relates to the field of semiconductor technology, providing a wafer-level packaging method and structure. The method includes: providing a MEMS suspended structure and a cover plate structure; etching trenches and electrode patterns on the bonding surface of the cover plate structure; directly bonding the MEMS suspended structure and the cover plate structure; etching the front side of the cover plate structure to achieve trench penetration; bonding the cover plate structure to a glass anode to form a glass sealing layer; melting the glass of the glass sealing layer at high temperature and reflowing it into the trenches to form an electrode isolation layer that isolates the through-penetrating electrodes; and thinning and polishing the glass sealing layer. This invention utilizes direct bonding technology combined with a glass reflow scheme to achieve wafer-level packaging of chips. The glass, as an isolation and sealing material, exists only in extremely fine trenches, solving the problem of poor temperature performance and low temperature linearity of devices caused by thermal stress mismatch when other materials are introduced.

This invention provides a multifunctional, compact, and high-precision pressure measurement device. The pressure-sensing module of the device employs a MEMS pressure core, with its core being an SOI (silicon-on-insulator) piezoresistive chip. The chip uses a flip-chip structure: the front side of the chip (the side with the piezoresistive circuitry) is fused to a glass cover plate wafer via anodic bonding or glass powder sintering, forming a sealed reference vacuum chamber or atmospheric reference chamber. The back side of the chip serves as the pressure-sensing surface, directly or through a pressure-transmitting medium contacting the pressure being measured. This device is suitable for miniaturized applications in high-temperature, high-pressure, small-volume, and strong electromagnetic interference environments.

This invention relates to a microfluidic chip for an inhalation sprayer, comprising a silicon wafer 1 and a glass sheet 2 bonded together by anodic bonding to form a semi-enclosed internal cavity, including an inlet end 3 and an outlet end 4. The outlet end includes a left outlet 41 and a right outlet 42, which are axially symmetrical with respect to the central axis X of the microfluidic chip. The axis Y of the left outlet and the axis Y' of the right outlet intersect the central axis X at point A. The outlet end includes a cutting start line U0, and the vertical distance from point A to the cutting start line U0 is L. The outlet end also includes a cutting buffer line U1, from which fluid inside the microfluidic chip is ejected. The vertical distance from the cutting buffer line U1 to the cutting start line U0 is the cutting buffer distance L', where L' ≤ L, to ensure that the fluid collides and sprays outside the chip. The cutting buffer distance protects the integrity of the outlet end during microfluidic chip cutting, improving the overall quality and yield of the microfluidic chip and reducing costs.

This invention belongs to the field of optical device technology. It proposes a MEMS micromirror structure and packaging method. The structure mainly includes the design and fabrication of a chip substrate, a glass cover, a getter, and a thermally conductive layer. A CMOS circuit and a movable micromirror array structure are fabricated on an SOI wafer structure layer. The glass cover is connected to the SOI wafer support layer via anodic bonding to achieve hermetically sealed packaging of the micromirror array. An AlN thin film is deposited on the back side of the substrate, and TSV technology is used to lead wires from the back side of the SOI wafer. This scheme uses the buried oxide layer of the SOI wafer to isolate the substrate layer from the micromirror array and CMOS circuit, avoiding the impact of high voltage on device performance and ensuring compatibility with CMOS processes. The back-side AlN thin film deposition improves heat dissipation during the process and device operation. Furthermore, the wafer-level packaging process offers advantages such as simple process, low cost, and ease of mass production.

This invention discloses a semi-flexible sealed composite material beam-membrane-island structure for micro / nano devices and its fabrication method. The invention employs both rigid and flexible materials to construct the beam-membrane-island structure of the micro / nano device. The beam and island structures are made of rigid materials that can be fabricated in micro / nano dimensions, while flexible materials fill the periphery of the beam and island structures. The flexible filling layer acts as a "displacement coordination layer," ensuring a clear mechanical response while maintaining the high modulus of the silicon beam. Simultaneously, the local deformation of the flexible layer absorbs lateral coupling stress, allowing strain fields in different directions to be separated and amplified in the beam / island region. The flexible material forms a stress transition zone between the beam and island, preventing strong stress concentration in the pure silicon beam-island structure under concentrated loads. This invention still uses materials compatible with micro / nano fabrication processes as the main structural material, enabling integration with standard photolithography, reactive ion etching, deep silicon reactive ion etching, anodic bonding processes, through-silicon vias (TSVs), and glass vias, among other micro / nano processes.

The application discloses a kind of semi-flexible sealing composite beam membrane island structure formula micro-nano device and its processing method.The application uses hard material and flexible material to constitute the beam membrane island structure of micro-nano device, wherein the hard material that can be micro-nano processed is used in beam structure and island structure, and flexible material is filled in the periphery of beam structure and island structure.Flexible filling layer plays the role of "displacement coordination layer", and by the local deformation of flexible layer, transverse coupling stress is absorbed, so that strain field in different directions is separated and enlarged in beam / island area.Flexible material forms stress transition zone between beam and island, to avoid strong stress concentration of pure silicon beam island structure under concentrated load.The application still uses material compatible with micro-nano processing technology as main structure material, and can be integrated with standard photolithography, reactive ion etching, deep silicon reactive ion etching and anodic bonding process, through silicon via, through glass via and other micro-nano processes.

This invention discloses a room-temperature self-sustaining vacuum zero-point energy array power generation device, belonging to the fields of quantum clean energy and micro-nano power generation technology. This invention solves the technical problems of traditional vacuum energy power generation, such as low efficiency, the need for vacuum pumps, the requirement for low-temperature superconductivity, energy recirculation, and the inability to output net power. The device consists of a permanently sealed vacuum Casimir trapping array, an asymmetric piezoelectric resonant amplification layer, a unilateral directional magnetic shielding energy-locking layer, and a room-temperature quantum rectification output layer. It utilizes silicon-glass anode bonding to achieve a 30-year long-term high vacuum. Through nano-spacing plates, room-temperature rectification, and a unidirectional energy-locking structure, it stably extracts vacuum zero-point energy and outputs net electrical energy under pump-free, cooling-free, and superconducting conditions. This invention can be mass-produced at the wafer level and can be stacked for expansion. A 1-square-meter module can output 280W to 650W net power. It has advantages such as zero fuel, zero emissions, long lifespan, self-sustainability, and applicability to all scenarios. It can be widely used in household power supply, industrial power, aerospace energy, and distributed power grids, and is a sustainable clean energy system that can be engineered and implemented.

This application discloses a miniaturized magnetometer gas chamber and its fabrication method. The gas chamber includes several sides, which are fabricated by anodic bonding and sealing. A first side and a second side are arranged opposite to each other. Metastable excitation coils are disposed on the first surfaces of both the first and second sides. Metal mirrors are disposed on the second surfaces of both the first and second sides. The second surfaces of both the first and second sides are located inside the gas chamber, which is filled with... 3 He; the dimensions of the air chamber are in millimeters. The embodiments of this application can improve the detection sensitivity and reliability of the magnetometer. This application can be widely applied in the field of magnetic field sensors.

This invention belongs to the field of optical device technology and discloses a MEMS device and packaging method based on SU8 adhesive. The method includes a structural substrate and a packaging wafer anoly bonded by an SU8 adhesive bonding ring. The packaging wafer has grooves to form a moving microcavity. A getter is deposited within the moving microcavity of the packaging wafer. The moving microcavity also accommodates a movable MEMS structure disposed on the surface of the structural substrate. Chip pads and metal leads are laid on the outer side of the moving microcavity. The packaging wafer also has an anti-reflow groove located at one end of the packaging wafer near the SU8 adhesive bonding ring. This invention uses SU8 adhesive to fabricate a polymer bonding ring on a complex packaging wafer with a microcavity. By optimizing the SU8 adhesive pretreatment process and designing an anti-reflow structure, contamination of the device due to SU8 adhesive flow is avoided. Polymer wafer-level bonding is used to achieve MEMS device packaging, and chip separation is achieved through two dicing operations. This method has advantages such as low temperature, low stress, flexible process, and low cost.

This invention discloses a self-driven microchannel heat sink, comprising: a cover plate and a substrate, which are anoly bonded together. The cover plate has a recessed vapor chamber and a gas phase channel on its inner surface, the gas phase channel communicating with the vapor chamber. The substrate has a recessed evaporation chamber, a condensation chamber, a liquid storage chamber, and a liquid phase microchannel. One end of the liquid phase microchannel communicates with the evaporation chamber, and the other end communicates with the condensation chamber. The evaporation chamber communicates with the vapor chamber, and the end of the gas phase channel away from the vapor chamber communicates with the condensation chamber. The liquid storage chamber communicates with the evaporation chamber. Fins are spaced apart within the evaporation chamber to form microchannels. Thus, the self-driven microchannel heat sink of this invention utilizes the capillary force and vapor pressure difference of the microchannels to drive the working fluid circulation. The vapor chamber and gas phase channel enable gas-liquid separation and flow, the two liquid phase channels accelerate the working fluid circulation, the split-flow replenishment reduces flow resistance, and the self-wetting working fluid enhances the heat dissipation limit, thereby achieving zero-power heat dissipation.

The invention provides a chip atom magnetometer gas chamber integration method and a chip atom magnetometer atomic gas chamber, and the method comprises the steps: 1, precisely placing one end of a glass tube shell on the surface of a first silicon wafer according to an overlay mark, and placing the glass tube shell in anodic bonding equipment for anodic bonding; step 2, filling the glass tube shell subjected to anodic bonding in the step 1 with an alkali metal compound; step 3, carrying out anodic bonding on the other end of the glass tube shell and a second silicon wafer, and simultaneously vacuumizing an inner cavity of the glass tube shell to ensure a vacuum environment of an air chamber; 4, heating the bonded silicon wafer at a set temperature for reaction, and completing release of the alkali metal and the nitrogen buffer gas in the gas chamber; and step 5, performing laser scribing on the first silicon wafer and the second silicon wafer according to the overlay mark to complete scribing separation of the atom magnetometer gas chamber. According to the technical scheme, the technical problem that the application range of the atom magnetometer is limited due to the fact that the meter head of the atom magnetometer is large in size in the prior art is solved.

A method for producing an alkali vapor cell includes a step of preparing a first member and a second member constituting at least a part of a container for enclosing an alkali metal; a step of forming a first antireflection film on a first surface of the first member; a step of forming a second antireflection film on a second surface of the first member, the second surface being opposite to the first surface; and a step of bonding the first member and the second member to each other by anodic bonding.