The invention relates to the technical field of film capacitors, in particular to a metalized
electrode structure of a
film capacitor, which comprises a
dielectric film and a metalized layer arranged on the surface of the
dielectric film, the metalized layer comprises a grid area, an edge thickening area and a connecting bridge, the edge thickening area is arranged on the edge of the
dielectric film, and the connecting bridge is arranged on the edge thickening area. The grid area comprises an inner-ring grid and an outer-ring grid, the aperture of the inner-ring grid is D1, the aperture of the outer-ring grid is D2, D1 and D2 meet the following relation: D1 is less than D2, the grid area is composed of a plurality of staggered
metal strips, the inner-ring grid and the outer-ring grid are connected through a connecting bridge, the edge thickening area is connected with the outer-ring grid through the connecting bridge, the width of each
metal strip is 0.1-1mm, and the width of each
metal strip is 0.1-1mm. The hole
diameter of the grid area ranges from 0.5 mm to 5 mm, the metalized layer is made of aluminum-
zinc alloy materials, the thickness of the metalized layer ranges from 20 nm to 100 nm, and the width of the edge thickening area ranges from 2 mm to 5 mm. The technical problems that an existing thin
film capacitor is poor in
voltage endurance capability, heat dissipation performance and
mechanical stability and large in preparation difficulty are solved.