Process for growing phi 8'' solar-grade Czochralski silicon by using 18-inch thermal field

A solar-grade, Czochralski technology, applied in crystal growth, single crystal growth, self-melt pulling method, etc., can solve the problem of large longitudinal temperature gradient changes at the head and tail of the single crystal, unsmooth gas flow, and unfavorable volatiles. Eliminate problems such as drainage, to optimize the crystal pulling process parameters, eliminate air leakage and magnetic leakage, and facilitate the drainage of volatiles.
CN101798704AActive Publication Date: 2010-08-11峨嵋半导体材料研究所
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
峨嵋半导体材料研究所
Publication Date
2010-08-11

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Abstract

The invention discloses a process for growing phi 8'' solar-grade Czochralski silicon monocrystalline by using an 18-inch thermal field. By adopting the 18-inch thermal-shielding thermal field and an upper-shaft magnetic fluid sealing device with a cooling system and combining the optimized parameter conditions of crystal-pulling processes, the invention enables the thermal field to have good heat preservation and obviously reduced energy consumption, enables gas to smoothly flow to be beneficial for the exhaustion of volatile matter, stabilizes crystallization, prolongs the service life of equipment and reduces the production cost; and in addition, the invention reduces magnet demagnetization and the evaporation of a magnetic fluid to avoid the air leakage and the slag dropping of the sealing of the magnetic fluid affecting the growth of the Czochralski silicon monocrystalline, improves the sealing performance and prolongs the service life, thereby ensuring the crystal-pulling processes of crystal leading, diameter equalization, shoulder rotation and the like to be stable and improving production efficiency and yield.
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Description

18-inch thermal field growth Φ8″ solar-grade Czochralski silicon single crystal process technical field The invention relates to the technical field of direct silicon single crystal technology, in particular to a process for growing a Φ8" solar-grade Czochralski silicon single crystal in an 18-inch thermal field. Background technique At present, the mainstream product of Czochralski monocrystalline silicon in the world is 8 inches, gradually transitioning to 12 inches, and the development level reaches 16-18 inches. According to statistics, the global consumption of 8-inch silicon wafers accounts for about 60%, 6-inch silicon wafers account for about 20%, and the rest account for about 20%. The overall level of Czochralski monocrystalline silicon products in China is still low, and the product structure is dominated by 4-inch, 5-inch, and 6-inch silicon monowafers. The market demand for 6-inch and 8-inch silicon wafers is growing very strongly. The solar wafer market Gro...

Claims

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