693 results about "Single crystal growth" patented technology

The invention belongs to the technical field of crystal growth, and provides a low-resistivity silicon carbide single crystal growth method and system and a single crystal, silicon carbide powder is uniformly paved at the bottom of a graphite crucible, metal carbide material particles are uniformly paved on the surface of the silicon carbide powder, and silicon carbide seed crystals are adhered to the top of the graphite crucible; the graphite crucible is sealed, and the interior of the graphite crucible is vacuumized; heating the graphite crucible subjected to vacuumizing treatment, filling carrier gas into the graphite crucible, then slowly replacing the carrier gas with doped source gas, slowly increasing the growth pressure to a set pressure, and growing a buffer layer; after the growth of the buffer layer is completed, changing the growth condition to grow the heavily doped silicon carbide single crystal; and after the growth of the crystal is completed, cooling the graphite crucible subjected to vacuumizing treatment, so that the crystal is naturally cooled, and the low-resistivity silicon carbide single crystal is obtained. The doping concentration of the silicon carbide single crystal can be improved, and the resistivity of the silicon carbide material can be reduced.

The invention belongs to the technical field of semiconductor photoelectric devices, and particularly discloses a preparation method for realizing growth of ultralow-defect perovskite single crystals based on steric hindrance control, which comprises the following steps: preparing a perovskite single crystal precursor solution: dissolving a perovskite single crystal precursor in a homogeneous solvent with coordination capability to prepare the precursor solution; and generating a perovskite single crystal seed crystal: heating the prepared perovskite single crystal precursor solution until microcrystals appear, selecting to form good crystals, drying, and storing as the seed crystal for future use. And growing the perovskite single crystal: putting the generated perovskite single crystal seed crystal into the perovskite single crystal precursor solution, heating, and growing to obtain the perovskite single crystal. The preparation method comprises the following steps: dissolving a precursor in a homogeneous solvent with coordination capability through a temperature reversal crystallization method, and adjusting the temperature to carry out single crystal growth; according to the steric hindrance theory, the growth temperature is selected by regulating and controlling the solvent proportion, and the perovskite single crystal with ultralow defect density is obtained.

The invention relates to the field of silicon carbide crystal growth, in particular to a high-efficiency silicon carbide single crystal growth method which comprises the following steps: (S.1) providing a reverse thermal field environment of which the temperature is sequentially reduced from top to bottom in the vertical direction; (S.2) heating the silicon carbide powder so as to generate silicon carbide sublimation gas; (S.3) the silicon carbide sublimation gas is introduced into the thermal field environment along with the carrier gas, so that the silicon carbide sublimation gas is layered under screening of the carrier gas, and a silicon-rich atmosphere located at the top of the thermal field environment and a supersaturated atmosphere located at the bottom of the thermal field environment are obtained; and (S.4) contacting the supersaturated atmosphere with a seed crystal arranged at the bottom of the thermal field environment so as to grow the silicon carbide single crystal on the surface of the seed crystal. Through the reverse thermal field design, carrier gas screening layering and carbon powder dynamic compensation mechanism, the problems that in traditional silicon carbide single crystal growth, silicon gas phase enrichment inhibits the crystallization rate, and defects are caused by unbalance of the stoichiometric ratio are systematically solved.

The invention relates to the technical field of crystal growth, in particular to a mold for growing a gallium oxide single crystal by an edge-defined film-fed growth method and a gallium oxide single crystal growth method. The mold is formed by connecting two partition plates through a fixing part, and a slit is reserved between the partition plates. Steps are arranged on the two radial sides of the top end of the mold, the bottom end of the mold is of an inverted trapezoidal structure, the two waists of a trapezoid are arc-shaped, and the bottom end of the mold is of an inverted trapezoidal structure, so that the temperature difference and temperature gradient of the surface of the mold are reduced, temperature distribution on the two sides of the mold is more symmetrical, and a more reasonable thermal field can be provided for size expansion of gallium oxide crystals.

The invention belongs to the technical field of single crystal growth equipment, and particularly relates to a seed crystal clamping assembly, in particular to a seed crystal pulling assembly, a silicon carbide single crystal growth device and a use method of the silicon carbide single crystal growth device. The seed crystal lifting assembly comprises a lifting rod and a lifting rod, a rotating head; wherein a cavity is formed in the wall body of the rotating head, and a groove is formed in the middle of the rotating head; and fan blades are fixedly arranged in the grooves. The fan blades are arranged in the rotating head, the unique airflow channel is designed, the lifting rod rotates to drive the fan blades to work, and forced airflow circulation is formed, so that the problem that the radial temperature difference of a crystal growth face is large is solved, back heat dissipation of seed crystals is remarkably improved, and the interface stability of crystal growth is improved. And meanwhile, the growth speed can be directly regulated and controlled in time by adjusting the rotating speed of the lifting rod, so that the growth efficiency and the crystal quality are synergistically improved.

The invention relates to the technical field of silicon carbide single crystal growth, in particular to a high-purity semi-insulating silicon carbide single crystal for an optical element and a growth process thereof.The growth process includes the steps that S1, silicon carbide powder, a graphite crucible and the like are assembled to form a thermal field device, the thermal field device is placed in an induction furnace, room-temperature furnace washing treatment and low-temperature furnace washing treatment are sequentially carried out, and the silicon carbide powder is obtained; carrying out thermal field impurity removal treatment; s2, assembling the silicon carbide seed crystal and the impurity-removed thermal field device, raising the temperature in the induction furnace, conveying high-purity argon or mixed gas of high-purity argon and high-purity hydrogen into the induction furnace, and performing crystal growth; s3, after crystal growth is finished, high-temperature and high-pressure annealing treatment is carried out firstly, then furnace cooling treatment is carried out, and the high-purity semi-insulating silicon carbide crystal ingot for the optical element is obtained. The silicon carbide crystal ingot with excellent light transmission performance and high resistivity is obtained by selecting specific raw materials, reasonably designing an assembly mode and combining processes of thermal field impurity removal, high-temperature and high-pressure annealing and the like.

The utility model relates to the technical field of single crystal preparation by a liquid phase epitaxy method, in particular to a leading forced convection introducing device for single crystal growth by a resistance heating LPE method, which comprises a graphite crucible and a graphite heating component arranged on the outer side of the graphite crucible, one end of the graphite seed crystal rod extends into the graphite crucible and is connected with the graphite seed crystal support; the seed crystal is adhered to the bottom surface of the graphite seed crystal support; the graphite annular turbofan is arranged in the graphite crucible; the graphite annular turbofan is connected with the graphite seed rod through a jackscrew clamp; the other end of the graphite seed crystal rod is externally connected with a seed crystal lifting and rotating mechanism; and the graphite seed crystal rod drives the seed crystal and the graphite annular turbofan to do lifting and rotating motion. According to the device, the influence of adverse convection on the whole flow field is weakened, and the controllability of the whole flow field can be improved; and meanwhile, an ideal temperature field for growing high-quality silicon carbide crystals in the growth cavity is ensured.

The invention discloses a super-large-scale silicon single crystal growth method based on a high-temperature superconducting magnetic control technology, and relates to the technical field of silicon single crystal growth, and the method comprises the following steps: setting and calibrating an initial magnetic field intensity, and combining a gradient graphite felt heat conductivity coefficient function to optimize temperature field uniformity; a dynamic magnetic field regulation and control mechanism is introduced in the melt stage, melt convection is inhibited through flow velocity-magnetic field joint control, and oxygen concentration monitoring is synchronized; a multi-physics coupling simulation and multi-objective optimization algorithm is adopted in the crystal growth stage, the magnetic field intensity, the heating power and the crystal pulling parameters are adjusted in real time, and the oxygen content and the growth rate are balanced; and the tail stress is relieved through a gradient field reduction technology, and finally, the low-defect and high-uniformity silicon single crystal is obtained. Melt flow and temperature field uniformity are accurately regulated and controlled through a high-temperature superconducting magnetic control technology, dynamic monitoring and a multi-target optimization algorithm are combined, the growth quality of silicon single crystals is remarkably improved, the defect rate and energy consumption are reduced, and meanwhile efficient and stable production of large-size crystals is achieved.

The invention discloses a preparation method of a carbon-coated single-crystal sodium ferric pyrophosphate positive electrode material, which is specifically implemented according to the following steps: step 1, dissolving sodium salt, ferric salt and phosphate in deionized water in proportion, then adding a carbon source into the solution, and uniformly stirring to obtain a mixed solution; step 2, fully drying the mixed solution obtained in the step 1 to obtain precursor powder; and 3, carrying out heat treatment on the precursor powder in a protective atmosphere, and cooling to obtain the carbon-coated single-crystal sodium ferric pyrophosphate positive electrode material. The invention also discloses a coating prepared by the method, a single-crystal structure is combined with uniform carbon coating, grain boundary defects are eliminated, conductivity is improved, high specific capacity and long cycle life are realized, single-crystal growth and carbon layer in-situ coating are synchronously realized by a synthesis process, and structural integrity and efficient conductive network construction can be ensured.

The invention discloses a Y-type hexagonal ferrite high-quality single crystal growth method, and belongs to the technical field of ferrite ceramic materials. The chemical expression of the Y-type hexagonal ferrite is Sr < 2 > Zn < 2-x > Ni < x > Fe < 12 > O < 22 >, wherein x is equal to 0 to 2; the method comprises the following steps: weighing SrCO3, ZnO, NiO and Fe2O3 according to the composition of the Y-type hexagonal ferrite, mixing the SrCO3, ZnO, NiO and Fe2O3 with a fluxing agent, and grinding to obtain precursor powder; carrying out temperature-changing staged sintering on the precursor powder, and carrying out 40-stage sintering in total; and after the staged sintering is finished, extracting a sintered product to obtain the Y-type hexagonal ferrite. The Y-type hexagonal ferrite high-quality single crystal material prepared by a fluxing agent method provides a material basis for further research on anisotropy of magnetism and ferroelectric properties of Y-type hexagonal ferrite and other potential application values.

The invention provides a czochralski silicon single crystal growth process multivariable monitoring method, and belongs to the technical field of czochralski silicon single crystal growth. Comprising the following steps: synchronously acquiring and pre-processing various process variable time sequence data in a czochralski silicon single crystal growth process to obtain a multivariable time sequence matrix; performing slow feature extraction on the multivariable time sequence matrix by using a multi-scale sliding window strategy, and sequentially constructing a static slow feature matrix and a dynamic slow feature matrix; the static slow feature vector and the dynamic slow feature vector of each time step are spliced into a fusion slow feature vector, all the fusion slow feature vectors form a fusion slow feature matrix, and the fusion slow feature matrix is divided into a fusion training set and a fusion test set; and constructing an auto-encoder network model, and training and testing the auto-encoder network model to obtain a multivariable monitoring result. According to the invention, accurate real-time monitoring of the growth process of the czochralski silicon single crystal in a complex environment can be realized.

The invention discloses a silicon single crystal growth interface deformation detection method, system, equipment and medium, and relates to the technical field of silicon single crystal growth soft measurement modeling. Comprising the following steps: acquiring a process parameter set in a silicon single crystal production process; the process parameters in the process parameter set serve as nodes, mutual information indexes between the nodes serve as edges, and a graph structure model is constructed; performing multi-layer neighborhood aggregation operation on the graph structure model to obtain initial features; performing attention mechanism operation on the initial features to obtain aggregated features; and carrying out weighting operation on the aggregation characteristics by adopting a long-short-term memory network to obtain a deformation detection result of the silicon single crystal growth interface. According to the method, the modeling expressive power of a complex dynamic process is improved, and the sensitivity and the response speed of an abnormal deformation evolution trend are also remarkably enhanced.

The invention discloses a PINN-based Czochralski silicon single crystal growth process V / G value soft measurement modeling method. The method is specifically implemented according to the following steps: step 1, constructing a physical model containing a crystal reference shape and a heat conduction model; the method comprises the steps of 1, designing a physical information neural network PINN, 2, designing a neural network model of the physical information neural network PINN, 3, designing a loss function of the PINN, performing training by combining the difference between network prediction and actual measurement values, a partial differential equation PDE and a physical constraint formed by boundary conditions, and optimizing the weight of the neural network model; step 4, network training and optimization; and step 5, model prediction. According to the invention, the problem that the V / G value is difficult to directly measure in the growth process of the czochralski silicon single crystal in the prior art is solved.

The invention relates to the technical field of semiconductor material growth, and aims to solve the technical problems that the service life of a heating element is shortened due to single atmosphere sharing, the quality is difficult to guarantee due to many crystal defects, the single crystal production cost is high, and the production efficiency is low in the prior art. The invention discloses a single crystal growth device which is characterized by comprising a furnace body, a first chamber, a second chamber, a heating assembly, a growth assembly, an atmosphere isolation and heat conduction assembly, an atmosphere management system and a central control system, the atmosphere isolation and heat conduction assembly is used for separating the furnace body into a first cavity and a second cavity which are isolated in an airtight mode, and efficient heat transfer is achieved. By the adoption of the scheme, atmosphere structure separation and combined crucible design can be achieved, high quality and high purity of crystals are guaranteed, meanwhile, the service life of a heating element is effectively prolonged, and the operation cost is remarkably reduced.

The invention belongs to the technical field of lithium ion battery materials, and discloses a preparation method of a high-first-effect small-particle single-crystal ultrahigh-nickel ternary positive electrode material. The method comprises the following steps: firstly, uniformly mixing an ultrahigh nickel ternary precursor with a lithium source and a tungsten source, performing mechanical densification and pressing to obtain a blocky solid, and then performing four-section program temperature control calcination to obtain a target material. The interface fusion resistance of single crystal growth can be reduced through mechanical densification; a part of the tungsten element forms a Li2WO4 coating layer, and a part of the dopant phase replaces Ni < 2 + >, so that grain growth can be inhibited, a crystal structure can be stabilized, and the first effect is improved; and the microstructure of the material can be accurately regulated and controlled through four-section temperature-controlled calcination. Through a coating-doping-single crystallization synergistic strategy, the electrochemical performance of the material in liquid and sulfide-based all-solid-state batteries is remarkably improved, the process is controllable, and the application prospect is wide.

An indium phosphide polycrystal high-pressure synthetic furnace relates to the technical field of semiconductor materials and comprises a furnace body, a quartz tube is arranged in the furnace body, a first quartz boat for containing red phosphorus is arranged at one end in the quartz tube, and a second quartz boat for containing indium is arranged at the other end in the quartz tube. A reaction transition device is arranged in the quartz tube between the first quartz boat and the second quartz boat, the reaction transition device comprises an outer tube, the outer tube is in close fit with the quartz tube, small-caliber passing openings are reserved in the two ends of the outer tube, separation blades which are uniformly distributed at intervals are arranged on the inner side of the outer tube, and a notch is reserved between each separation blade and the outer tube; and the phase angles of the gaps of the adjacent separation blades differ by 180 degrees. The reaction transition device provided by the utility model can effectively control the pressure change in the quartz tube and the synthesis process, and prevents furnace explosion and the conditions of rich indium, holes and the like caused by insufficient reaction in the synthesis process. Compared with a Bridgman method, the synthesis quality of the indium phosphide polycrystal is greatly improved, and a reliable foundation is laid for subsequent single crystal growth.

The invention provides a method for improving COP defects based on crystal bar temperature gradient control, and relates to the technical field of monocrystalline silicon production, the method comprises the following steps: collecting temperature distribution data of a crystal bar growth interface and surface in real time, and reading a crystal bar pulling speed in real time; calculating an instantaneous V / G value according to the temperature distribution data and the pulling speed of the crystal bar; comparing the instantaneous V / G value with a preset V / G critical value; and according to the comparison result, adjusting the inward or outward opening angle of the scales on the scale type radiation adjusting device arranged between the crystal bar and the heat shield, so as to adjust the crystal bar temperature gradient G by adjusting the heat radiation reflected to different positions of the crystal bar, and further adjust the V / G value. According to the scheme, the thermal radiation reflection path can be dynamically changed according to the actual condition of the single crystal growth stage, so that the temperature gradient distribution of the single crystal growth stage is adjusted, the V / G value is further adjusted to reduce the generation of COP defects, and the quality of the single crystal is improved.

The invention discloses a Czochralski silicon single crystal growth state recognition method based on a channel attention convolutional neural network, which comprises the following steps of: firstly, collecting time sequence data of each characteristic variable in a Czochralski silicon single crystal growth process, carrying out growth state classification and data set division on crystal growth data, and then carrying out data preprocessing; performing global slow feature extraction on the processed time sequence data, learning global slow feature sequence data, and extracting deep features; and finally, determining a one-dimensional convolutional neural network 1DCNN deep learning model structure fused with the global SFA and SE channel attention mechanism, and completing prediction and classification of different growth states of the czochralski silicon single crystal based on a maximum index method. The method solves the problems that in the prior art, in the czochralski silicon single crystal growth process, the time sequence feature extraction efficiency is insufficient, multi-channel feature weight distribution is unreasonable, and the dynamic feature distinguishing capacity is limited.

The invention relates to the field of silicon carbide crystal growth, in particular to a high-efficiency silicon carbide single crystal growth device which comprises a crucible body, the crucible body is divided into a high-temperature area and a low-temperature area from top to bottom according to temperature area distribution, and the high-temperature area and the low-temperature area are communicated with each other; wherein a powder starter used for containing a silicon carbide powder source is arranged in the high-temperature area, and a carbon powder area used for containing carbon powder is further arranged at the top of the high-temperature area; a seed crystal for depositing a silicon carbide crystal is arranged at the bottom of the low-temperature area in a bonding manner; a filtering device for filtering solid particles falling to the surface of the seed crystal is also arranged in the crucible main body. By changing the setting directions of the high-temperature area and the low-temperature area in the crucible main body, the diffusion direction and the distribution mode of gas for silicon carbide single crystal deposition are effectively changed, so that the crystal growth rate is increased.

The invention discloses a composite crucible for large-size AlN single crystal growth and a preparation method thereof, and belongs to the technical field of PVT method crystal growth. A heat conduction device is arranged in a cavity of the composite crucible and is composed of a plurality of high-purity graphite plates, the high-purity graphite plates are distributed at equal included angles to form a wing-shaped structure, the inner surface of the high-purity graphite crucible and the surfaces of the high-purity graphite plates are covered with a metal tantalum Ta layer or a TaC coating, and the high-purity graphite plates and the high-purity graphite plates are subjected to heat conduction under the temperature environment of 1800-2600 DEG C, so that the heat conduction effect of the high-purity graphite plates is improved. And TaC / C material layers are formed on the inner surface of the high-purity graphite crucible and the high-purity graphite plate. The heat conduction efficiency of the large-size crucible can be greatly improved, the problem that heat transfer from the side wall of the crucible to the source powder center is insufficient in the powder burning process can be remarkably solved, the uniformity of large-size AlN crystals is improved, thermal stress in crystal growth is relieved, and favorable conditions are created for preparing large-size and high-quality AlN single crystals.

The invention relates to the technical field of single crystals, and discloses a single crystal growth furnace which comprises a shell, the shell is movably sleeved with an electromagnetic limiting sleeve, the side face of the electromagnetic limiting sleeve is fixedly connected with a mounting plate, and the outer portion of the side face of the electromagnetic limiting sleeve is provided with a first mounting frame through a fastening bolt; a telescopic rod is mounted in the first mounting frame, a second mounting frame is mounted at the top end of the telescopic rod, an extension column is fixedly connected to the inner side of the second mounting frame, an upper cover is fixedly connected to the lower part of the extension column, and a first gear is mounted on the upper part of the extension column in a sleeving manner. According to the single crystal growth furnace, the electromagnetic limiting sleeve is installed outside the shell, the electromagnets are installed inside the electromagnetic limiting sleeve in an aligned mode, the temperature change of crystallization raw materials inside the shell is detected, the magnetic field of the electromagnets is controlled, the temperature is changed through the magnetic field, the stability of the raw materials during crystallization is ensured, and the crystallization quality is improved.

The invention discloses a Czochralski silicon single crystal growth process diameter detection system and method based on machine vision. The system comprises an optical data acquisition module, an image processing module, a core detection module and a control output module. The method comprises the following steps: firstly, acquiring a growth image of a crystal in a single crystal furnace through an obliquely mounted CCD (Charge Coupled Device) camera, and synchronously acquiring furnace temperature data and a nominal diameter of the crystal; searching an optimal solution of dynamic multi-region segmentation through a dynamic multi-threshold segmentation unit, extracting a highlight halo from a background, and reconstructing an edge detection model through a four-direction fractional order differential operator; an improved parallel chord center line theorem is adopted to obtain an ellipse center, and a two-stage optimization strategy is adopted to obtain an ellipse diameter; and finally, an effective detection result is output to a control system, and a data packet is uploaded in real time through the industrial Internet of Things gateway. The method is high in measurement precision, high in measurement efficiency and short in consumed time, online detection of the diameter of the 300mm-level crystal is realized, and core technical support is provided for closed-loop control of crystal growth.

The present invention belongs to the field of silicon carbide single crystal growth, and specifically provides a device for promoting the stable growth of silicon carbide crystals and a working method thereof, wherein the device for promoting the stable growth of silicon carbide crystals performs stirring at a lower temperature by regulating the temperature of the stirring stage and the growth stage, thereby reducing corrosion to the crucible and the stirring paddle, and controlling the crucible to rotate forward and reverse in a periodic alternating manner. When the stirring assembly is fixed, the stirring paddle can be driven to rotate freely by the flow of the solution to complete the stirring of the solution; the solution can be quickly mixed under the impact of the opposite inertial forces generated by the forward and reverse rotation of the crucible, so that the solution is mixed evenly in a short time; the crucible periodically rotates forward and reversely to reduce the rotation speed when the desired stirring effect is achieved, thereby avoiding an increase in the carbon dissolution rate, thereby improving the stability of subsequent crystal production. After the stirring is completed, the crystal is grown at a higher temperature to increase the growth rate of the crystal.

The present application relates to a kind of methods and applications of growing bismuth-doped rare-earth iron garnet BRIG crystal by guided mode pulling-top seed crystal method.For solving the problems of large internal stress, many defects, difficult to prepare thick film of single crystal in the current liquid phase epitaxy method of growing BRIG crystal;And the problems of long growth cycle, difficult to obtain seed crystal in top seed crystal method, the present application combines the fast growth of guided mode pulling crystal and the high-quality single crystal growth of top seed crystal method, and invents guided mode pulling-top seed crystal method to realize the fast growth of high-quality BRIG single crystal.First, the large-size doped rare-earth iron garnet crystal with high lattice matching and similar composition is quickly grown by guided mode pulling method, which is cut into centimeter-level seed crystal, and high-quality BRIG bulk single crystal is quickly grown by TSSG method.The crystal grown by this method has the advantages of small internal stress, less cracking, good uniformity, fast crystal growth, etc., and has obvious advantages in high-performance magneto-optical isolator.

The invention relates to the technical field of semiconductor crystal materials, and provides a low-thermal-conductivity Mg-Ag-Sb ternary compound single crystal material and a preparation method thereof. The preparation method comprises the following steps: a raw material weighing step: weighing Mg, Ag, Sb and Bi raw materials according to a set stoichiometric ratio; a packaging step: packaging the raw materials weighed in the raw material weighing step into a packaging container; a single crystal growth step: placing the packaging container in a temperature control device for temperature control, completely melting the raw materials in the packaging container to form a melt, then cooling the melt, forming a crystal blank in the melt, and growing the crystal blank into a single crystal; and a centrifugation step: the temperature of the melt in the packaging container is reduced to a set range, the packaging container is placed in centrifugal equipment for centrifugal treatment, single crystals in the melt are separated, and the Mg-Ag-Sb ternary compound single crystal thermoelectric material is obtained. The preparation method is high in controllability, and the prepared material is high in purity and uniformity and extremely low in heat conductivity.

The invention discloses a silicon carbide single crystal growth apparatus and a silicon carbide single crystal growth method. The silicon carbide single crystal growth device comprises a growth system, the growth system comprises a graphite crucible, a seed crystal support and a crucible support, the crucible support is arranged on the lower side of the graphite crucible, the graphite crucible is used for containing a growth solution, and the seed crystal support is arranged above the growth solution; wherein one side, close to the growth solution, of the seed crystal support is provided with at least one seed crystal bonding area, the seed crystal bonding area is used for bonding off-axis seed crystals, and the center of the seed crystal bonding area does not coincide with the center of the seed crystal support. The off-axis seed crystal is eccentrically arranged on the seed crystal support, so that the step flow direction of single crystal growth can be effectively controlled to be opposite to the solution convection direction, complete reverse step growth of the solution in the single flow direction in the seed crystal range is realized, the crystal quality can be effectively improved, and the growth efficiency is improved. Meanwhile, the off-axis seed crystal is adopted, so that the cost is greatly reduced.

The invention discloses a germanium single crystal growth intelligent optimization control system based on machine learning, which relates to the technical field of crystal growth control, and is characterized in that dimension conversion, timestamp synchronization and centralized indexing are carried out on multi-source sensor data to realize original data standardization; secondly, generating cleaned data with high credibility by adopting anomaly detection, drift correction and missing interpolation technologies, further fusing and storing the structured process parameters and the unstructured simulation data into a special database, and constructing a multi-dimensional joint index and version management mechanism; and finally, generating parameter adjustment suggestions by utilizing real-time trend extraction, online prediction and risk early warning in combination with an online optimization algorithm, and performing closed-loop feedback to realize intelligent monitoring and dynamic regulation and control on the germanium single crystal growth process. The scheme has the advantages of simplicity and convenience in implementation, high applicability, data interconnection and intercommunication and the like, the data consistency, fault early warning and process control precision are remarkably improved, and the quality of germanium single crystal products is effectively improved.

The invention provides a coupled vibration analysis method for a tungsten wire rope in a silicon single crystal pulling system, and belongs to the technical field of silicon single crystal growth of integrated circuits. The method comprises the following steps: constructing a lifting model of a tungsten wire rope in a silicon single crystal lifting system, and obtaining various lifting parameters of the tungsten wire rope; constructing a nonlinear vibration equation of the tungsten filament rope by utilizing the Hamiltonian principle according to each lifting parameter; and performing discretization processing on the nonlinear vibration equation by using a Galerkin method to obtain a linear vibration equation, solving the linear vibration equation, and obtaining a coupled vibration analysis result of the tungsten wire rope by using a solving result. The vibration suppression of the silicon single crystal pulling system can be realized, and the quality of the silicon single crystal is improved.

The invention belongs to the technical field of crystal growth, and relates to a method and a system for regulating and controlling the crystal orientation in real time in a micron-sized single crystal growth process, which are used for realizing real-time microscopic monitoring on the crystal growth state by collecting inherent physical signals of a crystal growth interface area and generating original signal data. Extracting characteristic parameters associated with crystal orientation deviation from the original signal data, generating a crystal orientation deviation characteristic vector, inputting the crystal orientation deviation characteristic vector into a preset mapping model, generating a crystal orientation deviation quantitative index to calculate a local thermal field regulation and control instruction, the micro heat source array is driven to apply a local thermal field gradient to a target area of a crystal growth interface so as to guide the crystal orientation to return, so that global thermal stress fluctuation and new crystal defect hidden dangers caused by traditional large-range thermal field adjustment are avoided, flexible fine adjustment of the crystal orientation is realized, the internal quality and uniformity of crystal growth are greatly improved, and the crystal growth efficiency is improved. Therefore, the single crystal quality and the yield are obviously improved.

The utility model relates to the technical field of semiconductors, in particular to a crucible cover and a silicon carbide single crystal growth device. The crucible cover comprises a middle part and an edge part, the middle part is used for installing a seed crystal, the edge part is annular and surrounds the middle part, and the inner ring side wall of the edge part is connected with the circumferential side wall of the middle part; wherein the edge part is further provided with an outer ring side wall opposite to the inner ring side wall, at least one side of the edge part is provided with a groove, and the groove is located between the inner ring side wall and the outer ring side wall. The crucible cover disclosed by the utility model can solve the problem of cracking of silicon carbide crystals tightly attached to the crucible cover, and the yield of silicon carbide single crystal growth is improved.