551 results about "Single crystal growth" patented technology

The invention relates to the technical field of crystal growth, in particular to a mold for growing a gallium oxide single crystal by an edge-defined film-fed growth method and a gallium oxide single crystal growth method. The mold is formed by connecting two partition plates through a fixing part, and a slit is reserved between the partition plates. Steps are arranged on the two radial sides of the top end of the mold, the bottom end of the mold is of an inverted trapezoidal structure, the two waists of a trapezoid are arc-shaped, and the bottom end of the mold is of an inverted trapezoidal structure, so that the temperature difference and temperature gradient of the surface of the mold are reduced, temperature distribution on the two sides of the mold is more symmetrical, and a more reasonable thermal field can be provided for size expansion of gallium oxide crystals.

The invention belongs to the technical field of single crystal growth equipment, and particularly relates to a seed crystal clamping assembly, in particular to a seed crystal pulling assembly, a silicon carbide single crystal growth device and a use method of the silicon carbide single crystal growth device. The seed crystal lifting assembly comprises a lifting rod and a lifting rod, a rotating head; wherein a cavity is formed in the wall body of the rotating head, and a groove is formed in the middle of the rotating head; and fan blades are fixedly arranged in the grooves. The fan blades are arranged in the rotating head, the unique airflow channel is designed, the lifting rod rotates to drive the fan blades to work, and forced airflow circulation is formed, so that the problem that the radial temperature difference of a crystal growth face is large is solved, back heat dissipation of seed crystals is remarkably improved, and the interface stability of crystal growth is improved. And meanwhile, the growth speed can be directly regulated and controlled in time by adjusting the rotating speed of the lifting rod, so that the growth efficiency and the crystal quality are synergistically improved.

The invention relates to the technical field of silicon carbide single crystal growth, in particular to a high-purity semi-insulating silicon carbide single crystal for an optical element and a growth process thereof.The growth process includes the steps that S1, silicon carbide powder, a graphite crucible and the like are assembled to form a thermal field device, the thermal field device is placed in an induction furnace, room-temperature furnace washing treatment and low-temperature furnace washing treatment are sequentially carried out, and the silicon carbide powder is obtained; carrying out thermal field impurity removal treatment; s2, assembling the silicon carbide seed crystal and the impurity-removed thermal field device, raising the temperature in the induction furnace, conveying high-purity argon or mixed gas of high-purity argon and high-purity hydrogen into the induction furnace, and performing crystal growth; s3, after crystal growth is finished, high-temperature and high-pressure annealing treatment is carried out firstly, then furnace cooling treatment is carried out, and the high-purity semi-insulating silicon carbide crystal ingot for the optical element is obtained. The silicon carbide crystal ingot with excellent light transmission performance and high resistivity is obtained by selecting specific raw materials, reasonably designing an assembly mode and combining processes of thermal field impurity removal, high-temperature and high-pressure annealing and the like.

The utility model relates to the technical field of single crystal preparation by a liquid phase epitaxy method, in particular to a leading forced convection introducing device for single crystal growth by a resistance heating LPE method, which comprises a graphite crucible and a graphite heating component arranged on the outer side of the graphite crucible, one end of the graphite seed crystal rod extends into the graphite crucible and is connected with the graphite seed crystal support; the seed crystal is adhered to the bottom surface of the graphite seed crystal support; the graphite annular turbofan is arranged in the graphite crucible; the graphite annular turbofan is connected with the graphite seed rod through a jackscrew clamp; the other end of the graphite seed crystal rod is externally connected with a seed crystal lifting and rotating mechanism; and the graphite seed crystal rod drives the seed crystal and the graphite annular turbofan to do lifting and rotating motion. According to the device, the influence of adverse convection on the whole flow field is weakened, and the controllability of the whole flow field can be improved; and meanwhile, an ideal temperature field for growing high-quality silicon carbide crystals in the growth cavity is ensured.

The invention discloses a super-large-scale silicon single crystal growth method based on a high-temperature superconducting magnetic control technology, and relates to the technical field of silicon single crystal growth, and the method comprises the following steps: setting and calibrating an initial magnetic field intensity, and combining a gradient graphite felt heat conductivity coefficient function to optimize temperature field uniformity; a dynamic magnetic field regulation and control mechanism is introduced in the melt stage, melt convection is inhibited through flow velocity-magnetic field joint control, and oxygen concentration monitoring is synchronized; a multi-physics coupling simulation and multi-objective optimization algorithm is adopted in the crystal growth stage, the magnetic field intensity, the heating power and the crystal pulling parameters are adjusted in real time, and the oxygen content and the growth rate are balanced; and the tail stress is relieved through a gradient field reduction technology, and finally, the low-defect and high-uniformity silicon single crystal is obtained. Melt flow and temperature field uniformity are accurately regulated and controlled through a high-temperature superconducting magnetic control technology, dynamic monitoring and a multi-target optimization algorithm are combined, the growth quality of silicon single crystals is remarkably improved, the defect rate and energy consumption are reduced, and meanwhile efficient and stable production of large-size crystals is achieved.

The invention discloses a preparation method of a carbon-coated single-crystal sodium ferric pyrophosphate positive electrode material, which is specifically implemented according to the following steps: step 1, dissolving sodium salt, ferric salt and phosphate in deionized water in proportion, then adding a carbon source into the solution, and uniformly stirring to obtain a mixed solution; step 2, fully drying the mixed solution obtained in the step 1 to obtain precursor powder; and 3, carrying out heat treatment on the precursor powder in a protective atmosphere, and cooling to obtain the carbon-coated single-crystal sodium ferric pyrophosphate positive electrode material. The invention also discloses a coating prepared by the method, a single-crystal structure is combined with uniform carbon coating, grain boundary defects are eliminated, conductivity is improved, high specific capacity and long cycle life are realized, single-crystal growth and carbon layer in-situ coating are synchronously realized by a synthesis process, and structural integrity and efficient conductive network construction can be ensured.

The invention provides a czochralski silicon single crystal growth process multivariable monitoring method, and belongs to the technical field of czochralski silicon single crystal growth. Comprising the following steps: synchronously acquiring and pre-processing various process variable time sequence data in a czochralski silicon single crystal growth process to obtain a multivariable time sequence matrix; performing slow feature extraction on the multivariable time sequence matrix by using a multi-scale sliding window strategy, and sequentially constructing a static slow feature matrix and a dynamic slow feature matrix; the static slow feature vector and the dynamic slow feature vector of each time step are spliced into a fusion slow feature vector, all the fusion slow feature vectors form a fusion slow feature matrix, and the fusion slow feature matrix is divided into a fusion training set and a fusion test set; and constructing an auto-encoder network model, and training and testing the auto-encoder network model to obtain a multivariable monitoring result. According to the invention, accurate real-time monitoring of the growth process of the czochralski silicon single crystal in a complex environment can be realized.

The invention discloses a silicon single crystal growth interface deformation detection method, system, equipment and medium, and relates to the technical field of silicon single crystal growth soft measurement modeling. Comprising the following steps: acquiring a process parameter set in a silicon single crystal production process; the process parameters in the process parameter set serve as nodes, mutual information indexes between the nodes serve as edges, and a graph structure model is constructed; performing multi-layer neighborhood aggregation operation on the graph structure model to obtain initial features; performing attention mechanism operation on the initial features to obtain aggregated features; and carrying out weighting operation on the aggregation characteristics by adopting a long-short-term memory network to obtain a deformation detection result of the silicon single crystal growth interface. According to the method, the modeling expressive power of a complex dynamic process is improved, and the sensitivity and the response speed of an abnormal deformation evolution trend are also remarkably enhanced.

The invention discloses a PINN-based Czochralski silicon single crystal growth process V / G value soft measurement modeling method. The method is specifically implemented according to the following steps: step 1, constructing a physical model containing a crystal reference shape and a heat conduction model; the method comprises the steps of 1, designing a physical information neural network PINN, 2, designing a neural network model of the physical information neural network PINN, 3, designing a loss function of the PINN, performing training by combining the difference between network prediction and actual measurement values, a partial differential equation PDE and a physical constraint formed by boundary conditions, and optimizing the weight of the neural network model; step 4, network training and optimization; and step 5, model prediction. According to the invention, the problem that the V / G value is difficult to directly measure in the growth process of the czochralski silicon single crystal in the prior art is solved.

The invention relates to the technical field of semiconductor material growth, and aims to solve the technical problems that the service life of a heating element is shortened due to single atmosphere sharing, the quality is difficult to guarantee due to many crystal defects, the single crystal production cost is high, and the production efficiency is low in the prior art. The invention discloses a single crystal growth device which is characterized by comprising a furnace body, a first chamber, a second chamber, a heating assembly, a growth assembly, an atmosphere isolation and heat conduction assembly, an atmosphere management system and a central control system, the atmosphere isolation and heat conduction assembly is used for separating the furnace body into a first cavity and a second cavity which are isolated in an airtight mode, and efficient heat transfer is achieved. By the adoption of the scheme, atmosphere structure separation and combined crucible design can be achieved, high quality and high purity of crystals are guaranteed, meanwhile, the service life of a heating element is effectively prolonged, and the operation cost is remarkably reduced.

The invention belongs to the technical field of lithium ion battery materials, and discloses a preparation method of a high-first-effect small-particle single-crystal ultrahigh-nickel ternary positive electrode material. The method comprises the following steps: firstly, uniformly mixing an ultrahigh nickel ternary precursor with a lithium source and a tungsten source, performing mechanical densification and pressing to obtain a blocky solid, and then performing four-section program temperature control calcination to obtain a target material. The interface fusion resistance of single crystal growth can be reduced through mechanical densification; a part of the tungsten element forms a Li2WO4 coating layer, and a part of the dopant phase replaces Ni < 2 + >, so that grain growth can be inhibited, a crystal structure can be stabilized, and the first effect is improved; and the microstructure of the material can be accurately regulated and controlled through four-section temperature-controlled calcination. Through a coating-doping-single crystallization synergistic strategy, the electrochemical performance of the material in liquid and sulfide-based all-solid-state batteries is remarkably improved, the process is controllable, and the application prospect is wide.

The invention provides a method for improving COP defects based on crystal bar temperature gradient control, and relates to the technical field of monocrystalline silicon production, the method comprises the following steps: collecting temperature distribution data of a crystal bar growth interface and surface in real time, and reading a crystal bar pulling speed in real time; calculating an instantaneous V / G value according to the temperature distribution data and the pulling speed of the crystal bar; comparing the instantaneous V / G value with a preset V / G critical value; and according to the comparison result, adjusting the inward or outward opening angle of the scales on the scale type radiation adjusting device arranged between the crystal bar and the heat shield, so as to adjust the crystal bar temperature gradient G by adjusting the heat radiation reflected to different positions of the crystal bar, and further adjust the V / G value. According to the scheme, the thermal radiation reflection path can be dynamically changed according to the actual condition of the single crystal growth stage, so that the temperature gradient distribution of the single crystal growth stage is adjusted, the V / G value is further adjusted to reduce the generation of COP defects, and the quality of the single crystal is improved.

The invention discloses a Czochralski silicon single crystal growth state recognition method based on a channel attention convolutional neural network, which comprises the following steps of: firstly, collecting time sequence data of each characteristic variable in a Czochralski silicon single crystal growth process, carrying out growth state classification and data set division on crystal growth data, and then carrying out data preprocessing; performing global slow feature extraction on the processed time sequence data, learning global slow feature sequence data, and extracting deep features; and finally, determining a one-dimensional convolutional neural network 1DCNN deep learning model structure fused with the global SFA and SE channel attention mechanism, and completing prediction and classification of different growth states of the czochralski silicon single crystal based on a maximum index method. The method solves the problems that in the prior art, in the czochralski silicon single crystal growth process, the time sequence feature extraction efficiency is insufficient, multi-channel feature weight distribution is unreasonable, and the dynamic feature distinguishing capacity is limited.

The invention discloses a composite crucible for large-size AlN single crystal growth and a preparation method thereof, and belongs to the technical field of PVT method crystal growth. A heat conduction device is arranged in a cavity of the composite crucible and is composed of a plurality of high-purity graphite plates, the high-purity graphite plates are distributed at equal included angles to form a wing-shaped structure, the inner surface of the high-purity graphite crucible and the surfaces of the high-purity graphite plates are covered with a metal tantalum Ta layer or a TaC coating, and the high-purity graphite plates and the high-purity graphite plates are subjected to heat conduction under the temperature environment of 1800-2600 DEG C, so that the heat conduction effect of the high-purity graphite plates is improved. And TaC / C material layers are formed on the inner surface of the high-purity graphite crucible and the high-purity graphite plate. The heat conduction efficiency of the large-size crucible can be greatly improved, the problem that heat transfer from the side wall of the crucible to the source powder center is insufficient in the powder burning process can be remarkably solved, the uniformity of large-size AlN crystals is improved, thermal stress in crystal growth is relieved, and favorable conditions are created for preparing large-size and high-quality AlN single crystals.

The invention discloses a Czochralski silicon single crystal growth process diameter detection system and method based on machine vision. The system comprises an optical data acquisition module, an image processing module, a core detection module and a control output module. The method comprises the following steps: firstly, acquiring a growth image of a crystal in a single crystal furnace through an obliquely mounted CCD (Charge Coupled Device) camera, and synchronously acquiring furnace temperature data and a nominal diameter of the crystal; searching an optimal solution of dynamic multi-region segmentation through a dynamic multi-threshold segmentation unit, extracting a highlight halo from a background, and reconstructing an edge detection model through a four-direction fractional order differential operator; an improved parallel chord center line theorem is adopted to obtain an ellipse center, and a two-stage optimization strategy is adopted to obtain an ellipse diameter; and finally, an effective detection result is output to a control system, and a data packet is uploaded in real time through the industrial Internet of Things gateway. The method is high in measurement precision, high in measurement efficiency and short in consumed time, online detection of the diameter of the 300mm-level crystal is realized, and core technical support is provided for closed-loop control of crystal growth.

The present application relates to a kind of methods and applications of growing bismuth-doped rare-earth iron garnet BRIG crystal by guided mode pulling-top seed crystal method.For solving the problems of large internal stress, many defects, difficult to prepare thick film of single crystal in the current liquid phase epitaxy method of growing BRIG crystal;And the problems of long growth cycle, difficult to obtain seed crystal in top seed crystal method, the present application combines the fast growth of guided mode pulling crystal and the high-quality single crystal growth of top seed crystal method, and invents guided mode pulling-top seed crystal method to realize the fast growth of high-quality BRIG single crystal.First, the large-size doped rare-earth iron garnet crystal with high lattice matching and similar composition is quickly grown by guided mode pulling method, which is cut into centimeter-level seed crystal, and high-quality BRIG bulk single crystal is quickly grown by TSSG method.The crystal grown by this method has the advantages of small internal stress, less cracking, good uniformity, fast crystal growth, etc., and has obvious advantages in high-performance magneto-optical isolator.

The invention discloses a silicon carbide single crystal growth apparatus and a silicon carbide single crystal growth method. The silicon carbide single crystal growth device comprises a growth system, the growth system comprises a graphite crucible, a seed crystal support and a crucible support, the crucible support is arranged on the lower side of the graphite crucible, the graphite crucible is used for containing a growth solution, and the seed crystal support is arranged above the growth solution; wherein one side, close to the growth solution, of the seed crystal support is provided with at least one seed crystal bonding area, the seed crystal bonding area is used for bonding off-axis seed crystals, and the center of the seed crystal bonding area does not coincide with the center of the seed crystal support. The off-axis seed crystal is eccentrically arranged on the seed crystal support, so that the step flow direction of single crystal growth can be effectively controlled to be opposite to the solution convection direction, complete reverse step growth of the solution in the single flow direction in the seed crystal range is realized, the crystal quality can be effectively improved, and the growth efficiency is improved. Meanwhile, the off-axis seed crystal is adopted, so that the cost is greatly reduced.

The invention discloses a germanium single crystal growth intelligent optimization control system based on machine learning, which relates to the technical field of crystal growth control, and is characterized in that dimension conversion, timestamp synchronization and centralized indexing are carried out on multi-source sensor data to realize original data standardization; secondly, generating cleaned data with high credibility by adopting anomaly detection, drift correction and missing interpolation technologies, further fusing and storing the structured process parameters and the unstructured simulation data into a special database, and constructing a multi-dimensional joint index and version management mechanism; and finally, generating parameter adjustment suggestions by utilizing real-time trend extraction, online prediction and risk early warning in combination with an online optimization algorithm, and performing closed-loop feedback to realize intelligent monitoring and dynamic regulation and control on the germanium single crystal growth process. The scheme has the advantages of simplicity and convenience in implementation, high applicability, data interconnection and intercommunication and the like, the data consistency, fault early warning and process control precision are remarkably improved, and the quality of germanium single crystal products is effectively improved.

The invention provides a coupled vibration analysis method for a tungsten wire rope in a silicon single crystal pulling system, and belongs to the technical field of silicon single crystal growth of integrated circuits. The method comprises the following steps: constructing a lifting model of a tungsten wire rope in a silicon single crystal lifting system, and obtaining various lifting parameters of the tungsten wire rope; constructing a nonlinear vibration equation of the tungsten filament rope by utilizing the Hamiltonian principle according to each lifting parameter; and performing discretization processing on the nonlinear vibration equation by using a Galerkin method to obtain a linear vibration equation, solving the linear vibration equation, and obtaining a coupled vibration analysis result of the tungsten wire rope by using a solving result. The vibration suppression of the silicon single crystal pulling system can be realized, and the quality of the silicon single crystal is improved.

The invention belongs to the technical field of crystal growth, and relates to a method and a system for regulating and controlling the crystal orientation in real time in a micron-sized single crystal growth process, which are used for realizing real-time microscopic monitoring on the crystal growth state by collecting inherent physical signals of a crystal growth interface area and generating original signal data. Extracting characteristic parameters associated with crystal orientation deviation from the original signal data, generating a crystal orientation deviation characteristic vector, inputting the crystal orientation deviation characteristic vector into a preset mapping model, generating a crystal orientation deviation quantitative index to calculate a local thermal field regulation and control instruction, the micro heat source array is driven to apply a local thermal field gradient to a target area of a crystal growth interface so as to guide the crystal orientation to return, so that global thermal stress fluctuation and new crystal defect hidden dangers caused by traditional large-range thermal field adjustment are avoided, flexible fine adjustment of the crystal orientation is realized, the internal quality and uniformity of crystal growth are greatly improved, and the crystal growth efficiency is improved. Therefore, the single crystal quality and the yield are obviously improved.

The invention belongs to the field of semiconductor wafers. The embodiment of the invention provides a single crystal growth furnace and a single crystal pulling method. The single crystal growth furnace includes: a main furnace chamber; the auxiliary chamber group comprises at least two auxiliary chambers, each auxiliary chamber independently comprises a furnace barrel and a lifting mechanism, the lifting mechanism is used for lifting a crystal bar, and the furnace barrel comprises an inner wall, a heating device, an interlayer, a cooling device and an outer wall which are sequentially arranged from inside to outside; and the auxiliary chambers are connected through the rotary lifting mechanism, and the rotary lifting mechanism is used for adjusting the positions of the auxiliary chambers, so that the furnace barrel of one of the auxiliary chambers is communicated with the inner cavity of the main furnace chamber. When the single crystal growth furnace is used for growing single crystals, the working time for completing drawing of a crystal bar can be shortened, and the production efficiency is improved; and the heating device is adopted to adjust the crystal bar to slowly cool, so that crystal cracking abnormity caused by thermal stress is reduced.

The invention discloses a preparation method of a potassium-sodium niobate-based single crystal, the chemical formula of the potassium-sodium niobate-based single crystal is # imgabs0 # x representing the mole fraction of Co element in a system, 0 < x < = 0.005, pre-seed crystals prepared by a seed-crystal-free solid-phase crystal growth method are subjected to surface growth residue and attachment removal, polishing, thinning and related treatment, and the potassium-sodium niobate-based single crystal is obtained. According to the method, the potassium-sodium niobate and the powder are pressed together to form a seed burying blank, the large-size potassium-sodium niobate-based single crystal grows through seed crystal induction, the advantages of a seed crystal-free solid phase method and a traditional solid phase method are combined, the stability of single crystal growth is ensured, and regulation and control of the growth orientation and size increase of the single crystal can be realized through accurate control of the seed crystal; the introduction of impurities can be avoided, and the repeatability and stability of single crystal growth are improved.

The invention provides a semiconductor silicon single crystal growth value prediction method based on event trigger learning, and belongs to the technical field of silicon single crystal growth prediction. Comprising the following steps: constructing a value state space model according to a silicon single crystal growth mechanism; embedding the value state space model into a long short-term memory network to construct a network model; an attention mechanism is introduced into the network model, weighted fusion processing and physical constraint mapping processing are carried out in sequence, and the network model is constructed; based on an event triggering learning mechanism, training and adjusting the network model by utilizing historical time sequence data of the semiconductor silicon single crystal growth value to obtain a trained network model; and inputting the technological parameters at the current moment into the trained network model, and predicting the growth value of the semiconductor silicon single crystal at the next moment. According to the method, the accuracy, the real-time performance and the self-adaptive updating capability of semiconductor silicon single crystal growth value prediction can be improved.

The invention discloses a device and a method for inhibiting crucible oxidation and raw material decomposition in gallium oxide single crystal growth, the device comprises a furnace body, an iraurita crucible, a thermal insulation layer, an induction coil, a lifting mechanism and the like, a temperature dynamic regulation and control system is arranged between the iraurita crucible and the thermal insulation layer; the temperature dynamic regulation and control system is used for monitoring the temperature distribution of the iridium crucible and the inner cavity in real time and regulating the heating frequency of the induction coil through feedback temperature; a melt decomposition monitoring system is arranged in the inner cavity close to the iraurita crucible and is used for detecting the gallium atom concentration and oxygen partial pressure change in the inner cavity in real time; and an atmosphere active adjusting system is also arranged in the furnace body. According to the device, the gallium oxide single crystal can be obtained, and the problems of crucible oxidation, melt decomposition and unstable crystal quality caused by a high-temperature environment can be solved; through dynamic monitoring and regulation, the oxidation and corrosion loss of the iraurita crucible is reduced, and meanwhile, the large-size and high-quality beta-Ga2O3 single crystal is obtained.

The invention relates to the technical field of gallium oxide crystal preparation, in particular to a gallium oxide edge-defined film-fed crystal growth quality prediction method based on artificial intelligence. Obtaining multi-source data of gallium oxide edge-defined film-fed crystal growth, wherein the multi-source data comprises process parameters and dynamic data; multi-modal data features are obtained based on data feature extraction of the multi-source data; inputting the multi-modal data characteristics into a multi-modal fusion prediction model to obtain gallium oxide edge-defined film-fed crystal growth quality prediction data; and obtaining optimized process parameters through a genetic algorithm based on the gallium oxide edge-defined film-fed crystal growth quality prediction data. According to the method, stage features are extracted respectively, the process state of each stage can be evaluated in real time, the process root of the final quality problem is traced, the situation that the crystal growth condition cannot be predicted by depending on experience in a traditional method is avoided, comprehensive prediction of crystal growth is achieved, process parameters are fed back, and optimization of the process parameters is achieved.

The invention discloses a germanium single crystal growth process regulation and control system and method, relates to the technical field of process optimization, and aims to solve the problems of non-uniform measurement of equipment and difficulty in timely recognition of abnormity in multi-furnace germanium single crystal pulling. And a high-throughput data quality control method with cross-device dynamic calibration, real-time anomaly detection, multi-channel redundancy check, graded cleaning and feedback modeling is provided. Calibration and a data template are unified through the first step; 2, monitoring abnormity based on local kernel density and redundancy similarity; step 3, carrying out hierarchical cleaning by adopting outlier integration and batch difference; 4, carrying out model training by utilizing a quality weight and monitoring an error on line, and if high-quality data also deviates, backtracking a calibration or updating strategy, so that the comparability and the reliability of the data are both considered, and the optimization efficiency of a crystal pulling process is remarkably improved; according to the method, multi-equipment measurement and threshold dynamic adjustment requirements are considered, and improvement of single crystal growth quality and data management efficiency is practically assisted.

The invention relates to the technical field of silicon carbide single crystal production, and discloses a seed crystal supporting and protecting structure for growing a silicon carbide single crystal by a liquid phase method, comprising: a seed crystal fixing and supporting rod, which comprises a supporting part and a rod part, the supporting part and the rod part are integrally formed; the silicon carbide seed crystal plate is mounted on the seed crystal fixing and supporting rod; the seed crystal protection ring is mounted on the seed crystal fixing and supporting rod, the upper end surface of the seed crystal protection ring is flush with the upper end surface of the middle supporting part of the seed crystal fixing and supporting rod, and the lower end surface of the seed crystal protection ring is flush with the seed crystal bonding end surface of the silicon carbide seed wafer, so that the flat embedding type layout of the silicon carbide seed wafer is formed. According to the invention, the stability of a seed crystal-melt interface is ensured through the integrally designed seed crystal fixing and supporting rod; the seed crystal protection ring and the convection blocking ring are combined for use, so that triple stable control on a temperature field, a flow field and a concentration field of the edge of the seed crystal is realized; the problems of edge polycrystal parasitism, inclusion defects and interface instability are effectively inhibited, so that the single crystal growth quality and yield are remarkably improved.

The invention relates to the technical field of crystal growth control, in particular to an indium phosphide single crystal growth temperature control method based on a sensor network, which comprises the following steps of: importing temperature control data and atmosphere control data into a temperature-gas interaction state analysis model; analyzing the interaction state of the growth temperature and the growth atmosphere in the indium phosphide single crystal growth process; the diffraction structure data are imported into an indium phosphide single crystal structure state analysis model, and the structure state of the indium phosphide single crystal is analyzed; and according to the interaction state analysis result of the growth temperature and the growth atmosphere and the structure state analysis result of the indium phosphide single crystal, constructing an indium phosphide single crystal quality prediction model, and predicting the quality of the indium phosphide single crystal. According to the quality prediction result of the indium phosphide single crystal, the growth temperature of the indium phosphide single crystal is optimized, deviation and fluctuation in the growth process can be effectively reduced, uniform distribution of temperature and atmosphere pressure is ensured, and then the uniformity and integrity of the indium phosphide single crystal are improved.

The invention belongs to the technical field of scintillation materials, and particularly relates to a chromium ion doped near-infrared scintillation crystal and a preparation method and application thereof. The chromium ion-doped near-infrared scintillation crystal has a molecular formula of A3B2-xCrxC3O12, x is greater than or equal to 0.005 and less than or equal to 0.1, and after a chromium ion-doped ultraviolet-visible light inorganic scintillator is adopted, light is emitted at the wavelength of 650-950 nm and has good wavelength matching with a silicon photoelectric detector. Besides, single crystal growth is carried out by adopting a Czochralski method, the crystal growth process is optimized, the ion doping concentration is regulated and controlled, the scintillation performance of the chromium ion doped near-infrared scintillation crystal in the near-infrared band is improved, the requirement of the chromium ion doped near-infrared scintillation crystal in the radiation detection field is further met, and the problem that an existing scintillation crystal is low in transparency is solved.

The invention relates to the technical field of single crystal growth, in particular to a single crystal furnace which comprises a furnace body, a crucible assembly, a heating assembly, a guide cylinder and a gas guide assembly, and an exhaust through hole is formed in the furnace body; the crucible assembly is arranged in the furnace body; the heating assembly is arranged in the furnace body, located around the crucible assembly and used for heating the crucible assembly. The guide cylinder is arranged in the furnace body, is positioned above the crucible assembly and is used for guiding shielding gas into the furnace body; the gas guide assembly is arranged in the furnace body, located below the crucible assembly and used for guiding part of the shielding gas to the position below the crucible assembly. The maximum temperature of the bottom of the crucible can be reduced, the temperature difference between the maximum temperature of the bottom of the crucible and upper and lower silicon solutions in the crucible is reduced, and the heat convection phenomenon of the silicon solutions in the crucible is slowed down, so that the concentration of oxygen generated by reaction in the crucible is reduced, the oxygen content of a crystal bar is reduced, the crystal growth quality is effectively improved, and the crystal pulling quality of the crystal bar is improved; and the power consumption of the heater is not increased.