351 results about "Single crystal growth" patented technology

The utility model relates to the technical field of single crystal preparation by a liquid phase epitaxy method, in particular to a leading forced convection introducing device for single crystal growth by a resistance heating LPE method, which comprises a graphite crucible and a graphite heating component arranged on the outer side of the graphite crucible, one end of the graphite seed crystal rod extends into the graphite crucible and is connected with the graphite seed crystal support; the seed crystal is adhered to the bottom surface of the graphite seed crystal support; the graphite annular turbofan is arranged in the graphite crucible; the graphite annular turbofan is connected with the graphite seed rod through a jackscrew clamp; the other end of the graphite seed crystal rod is externally connected with a seed crystal lifting and rotating mechanism; and the graphite seed crystal rod drives the seed crystal and the graphite annular turbofan to do lifting and rotating motion. According to the device, the influence of adverse convection on the whole flow field is weakened, and the controllability of the whole flow field can be improved; and meanwhile, an ideal temperature field for growing high-quality silicon carbide crystals in the growth cavity is ensured.

The invention relates to the technical field of semiconductor material growth, and aims to solve the technical problems that the service life of a heating element is shortened due to single atmosphere sharing, the quality is difficult to guarantee due to many crystal defects, the single crystal production cost is high, and the production efficiency is low in the prior art. The invention discloses a single crystal growth device which is characterized by comprising a furnace body, a first chamber, a second chamber, a heating assembly, a growth assembly, an atmosphere isolation and heat conduction assembly, an atmosphere management system and a central control system, the atmosphere isolation and heat conduction assembly is used for separating the furnace body into a first cavity and a second cavity which are isolated in an airtight mode, and efficient heat transfer is achieved. By the adoption of the scheme, atmosphere structure separation and combined crucible design can be achieved, high quality and high purity of crystals are guaranteed, meanwhile, the service life of a heating element is effectively prolonged, and the operation cost is remarkably reduced.

The invention belongs to the technical field of lithium ion battery materials, and discloses a preparation method of a high-first-effect small-particle single-crystal ultrahigh-nickel ternary positive electrode material. The method comprises the following steps: firstly, uniformly mixing an ultrahigh nickel ternary precursor with a lithium source and a tungsten source, performing mechanical densification and pressing to obtain a blocky solid, and then performing four-section program temperature control calcination to obtain a target material. The interface fusion resistance of single crystal growth can be reduced through mechanical densification; a part of the tungsten element forms a Li2WO4 coating layer, and a part of the dopant phase replaces Ni < 2 + >, so that grain growth can be inhibited, a crystal structure can be stabilized, and the first effect is improved; and the microstructure of the material can be accurately regulated and controlled through four-section temperature-controlled calcination. Through a coating-doping-single crystallization synergistic strategy, the electrochemical performance of the material in liquid and sulfide-based all-solid-state batteries is remarkably improved, the process is controllable, and the application prospect is wide.

The invention discloses a Czochralski silicon single crystal growth process diameter detection system and method based on machine vision. The system comprises an optical data acquisition module, an image processing module, a core detection module and a control output module. The method comprises the following steps: firstly, acquiring a growth image of a crystal in a single crystal furnace through an obliquely mounted CCD (Charge Coupled Device) camera, and synchronously acquiring furnace temperature data and a nominal diameter of the crystal; searching an optimal solution of dynamic multi-region segmentation through a dynamic multi-threshold segmentation unit, extracting a highlight halo from a background, and reconstructing an edge detection model through a four-direction fractional order differential operator; an improved parallel chord center line theorem is adopted to obtain an ellipse center, and a two-stage optimization strategy is adopted to obtain an ellipse diameter; and finally, an effective detection result is output to a control system, and a data packet is uploaded in real time through the industrial Internet of Things gateway. The method is high in measurement precision, high in measurement efficiency and short in consumed time, online detection of the diameter of the 300mm-level crystal is realized, and core technical support is provided for closed-loop control of crystal growth.

The present application relates to a kind of methods and applications of growing bismuth-doped rare-earth iron garnet BRIG crystal by guided mode pulling-top seed crystal method.For solving the problems of large internal stress, many defects, difficult to prepare thick film of single crystal in the current liquid phase epitaxy method of growing BRIG crystal;And the problems of long growth cycle, difficult to obtain seed crystal in top seed crystal method, the present application combines the fast growth of guided mode pulling crystal and the high-quality single crystal growth of top seed crystal method, and invents guided mode pulling-top seed crystal method to realize the fast growth of high-quality BRIG single crystal.First, the large-size doped rare-earth iron garnet crystal with high lattice matching and similar composition is quickly grown by guided mode pulling method, which is cut into centimeter-level seed crystal, and high-quality BRIG bulk single crystal is quickly grown by TSSG method.The crystal grown by this method has the advantages of small internal stress, less cracking, good uniformity, fast crystal growth, etc., and has obvious advantages in high-performance magneto-optical isolator.

The invention provides a semiconductor silicon single crystal growth value prediction method based on event trigger learning, and belongs to the technical field of silicon single crystal growth prediction. Comprising the following steps: constructing a value state space model according to a silicon single crystal growth mechanism; embedding the value state space model into a long short-term memory network to construct a network model; an attention mechanism is introduced into the network model, weighted fusion processing and physical constraint mapping processing are carried out in sequence, and the network model is constructed; based on an event triggering learning mechanism, training and adjusting the network model by utilizing historical time sequence data of the semiconductor silicon single crystal growth value to obtain a trained network model; and inputting the technological parameters at the current moment into the trained network model, and predicting the growth value of the semiconductor silicon single crystal at the next moment. According to the method, the accuracy, the real-time performance and the self-adaptive updating capability of semiconductor silicon single crystal growth value prediction can be improved.

The invention discloses a device and a method for inhibiting crucible oxidation and raw material decomposition in gallium oxide single crystal growth, the device comprises a furnace body, an iraurita crucible, a thermal insulation layer, an induction coil, a lifting mechanism and the like, a temperature dynamic regulation and control system is arranged between the iraurita crucible and the thermal insulation layer; the temperature dynamic regulation and control system is used for monitoring the temperature distribution of the iridium crucible and the inner cavity in real time and regulating the heating frequency of the induction coil through feedback temperature; a melt decomposition monitoring system is arranged in the inner cavity close to the iraurita crucible and is used for detecting the gallium atom concentration and oxygen partial pressure change in the inner cavity in real time; and an atmosphere active adjusting system is also arranged in the furnace body. According to the device, the gallium oxide single crystal can be obtained, and the problems of crucible oxidation, melt decomposition and unstable crystal quality caused by a high-temperature environment can be solved; through dynamic monitoring and regulation, the oxidation and corrosion loss of the iraurita crucible is reduced, and meanwhile, the large-size and high-quality beta-Ga2O3 single crystal is obtained.

The invention relates to the technical field of gallium oxide crystal preparation, in particular to a gallium oxide edge-defined film-fed crystal growth quality prediction method based on artificial intelligence. Obtaining multi-source data of gallium oxide edge-defined film-fed crystal growth, wherein the multi-source data comprises process parameters and dynamic data; multi-modal data features are obtained based on data feature extraction of the multi-source data; inputting the multi-modal data characteristics into a multi-modal fusion prediction model to obtain gallium oxide edge-defined film-fed crystal growth quality prediction data; and obtaining optimized process parameters through a genetic algorithm based on the gallium oxide edge-defined film-fed crystal growth quality prediction data. According to the method, stage features are extracted respectively, the process state of each stage can be evaluated in real time, the process root of the final quality problem is traced, the situation that the crystal growth condition cannot be predicted by depending on experience in a traditional method is avoided, comprehensive prediction of crystal growth is achieved, process parameters are fed back, and optimization of the process parameters is achieved.

The invention relates to the technical field of silicon carbide single crystal production, and discloses a seed crystal supporting and protecting structure for growing a silicon carbide single crystal by a liquid phase method, comprising: a seed crystal fixing and supporting rod, which comprises a supporting part and a rod part, the supporting part and the rod part are integrally formed; the silicon carbide seed crystal plate is mounted on the seed crystal fixing and supporting rod; the seed crystal protection ring is mounted on the seed crystal fixing and supporting rod, the upper end surface of the seed crystal protection ring is flush with the upper end surface of the middle supporting part of the seed crystal fixing and supporting rod, and the lower end surface of the seed crystal protection ring is flush with the seed crystal bonding end surface of the silicon carbide seed wafer, so that the flat embedding type layout of the silicon carbide seed wafer is formed. According to the invention, the stability of a seed crystal-melt interface is ensured through the integrally designed seed crystal fixing and supporting rod; the seed crystal protection ring and the convection blocking ring are combined for use, so that triple stable control on a temperature field, a flow field and a concentration field of the edge of the seed crystal is realized; the problems of edge polycrystal parasitism, inclusion defects and interface instability are effectively inhibited, so that the single crystal growth quality and yield are remarkably improved.

The utility model provides a silicon carbide crystal growth device for improving the spiral dislocation defect. The silicon carbide crystal growth device comprises a crucible body and a plurality of graphite partition plates arranged in the crucible, and the graphite partition plates are arranged at the bottom of a raw material area of the crucible at equal intervals; the graphite clapboards are inserted into the silicon carbide powder at intervals, the heights of the graphite clapboards are in an arithmetic progression, so that the heights of the silicon carbide powder are also in an arithmetic progression, and the heights of the graphite clapboards and the silicon carbide powder in the corresponding areas are gradually reduced in the direction from the small surface area of the seed crystal to the direction far away from the small surface area. In the single crystal growth process, the silicon carbide powder in the graphite partition interlayer is heated to sublimate, and the distance between the surface of the silicon carbide powder and the growth surface of the seed crystal is reduced due to the height advantage of the silicon carbide powder in the graphite partition area with higher height, so that the growth component forms the component density advantage at the surface of the seed crystal in the area; the conversion and movement processes of screw dislocation in the crystal are effectively promoted, and the crystal quality is improved.

The invention provides an MPCVD microwave single crystal growth pressure control device and growth equipment provided with the same, the MPCVD microwave single crystal growth pressure control device comprises a furnace body and a vacuum pump, and is characterized in that a filter is arranged between the furnace body and the vacuum pump, and two side pipelines for communicating the furnace body with the vacuum pump are arranged at two ends of the filter; the air inlets and the air outlets of the two side pipelines are mutually crossed, and at least one control valve is arranged on each side pipeline. The pressure control device for MPCVD microwave single crystal growth is simple in structure and easy to disassemble and assemble, the stability of airflow and the stability of pressure in the whole process of MPCVD microwave single crystal growth can be guaranteed, dust can be effectively filtered, the effectiveness and safety of pipeline smoothness can be guaranteed, and therefore the quality of diamond MPCVD microwave single crystal growth can be guaranteed. The invention further provides a using method of the pressure control device for MPCVD microwave single crystal growth.

The invention discloses an indium phosphide single crystal growth dynamic thermal field control method based on AI calibration of multiple temperature zones, and relates to the technical field of semiconductor material preparation and artificial intelligence control. According to the method, a multi-temperature-zone thermal field digital twin model is constructed, multi-channel temperature data, heating power data and crystal growth image data in an indium phosphide single crystal growth furnace are collected, and real-time three-dimensional reconstruction of thermal field distribution in the furnace is carried out; with the crystal growth rate, the solid-liquid interface shape and the thermal stress distribution as optimization targets, power adjustment instructions of heaters in all temperature zones are output; an AI calibration module is introduced to correct thermophysical parameters of the digital twin model; deducing a thermal field state at a future moment, compensating a thermal hysteresis effect in advance, and realizing accurate closed-loop control of an indium phosphide single crystal growth process; according to the invention, the problem that the traditional PID control is difficult to cope with nonlinear, strong-coupling and large-lag thermal field change in large-size crystal growth is solved, and the single crystal yield and the lattice quality are remarkably improved.

The invention discloses a method, a device, equipment and a medium for controlling a Czochralski process, and belongs to the field of Czochralski. Observation variables in the single crystal straight pulling process are obtained and comprise the bright ring outer ring radius, the melt mass and the liquid opening distance. Then, based on a state space model, according to the observation variables, the internal state of the single crystal straight pulling process is estimated, and estimation variables including the estimated crystal radius and the estimated meniscus height are obtained; and then taking the estimated variable as an initial state, determining a predicted change track of an internal state based on a state space model, and generating and executing a control instruction based on the predicted change track by taking a target crystal radius and a target meniscus height as control targets. According to the scheme, through multi-variable collaborative estimation and predictive optimization, the problems that variables are strongly coupled, the internal state cannot be directly measured, control lags and the like in the czochralski single crystal growth process are solved, technical support is provided for preparing high-quality large-size single crystal silicon, and the crystal diameter control precision is improved.

This utility model discloses a heating device that facilitates single crystal growth, belonging to the field of single crystal heating technology. It includes a base and a furnace body. The bottom of the furnace body passes through and is fixedly connected to the top wall of the base. A crucible is rotatably installed inside the furnace body. A heat insulation cylinder is fixedly connected to the top wall of the furnace body to prevent internal temperature leakage. It also includes a heater and a height adjustment component. The heater is fitted around the crucible. The height adjustment component includes a ring, a screw, and a screw sleeve. The top of the ring is fixedly connected to the bottom of the heater, and one end of the bottom of the ring is fixedly connected to the top of the screw. This heating device, which facilitates single crystal growth, allows for adjustment of the heater height through the height adjustment component, ensuring the heater height is always controlled within a suitable range. This solves the problem that most existing single crystal heating devices are inconvenient to adjust the heater height, have poor control over the single crystal thermal field, and are prone to causing thermal stress defects in the crystal rod.

The application discloses a method for preparing a large-size single crystal by a crucible-free method and belongs to the technical field of semiconductor material preparation. The method comprises the following steps: a. providing a plurality of small-size seed crystals, wherein the seed crystals are single crystal seed crystals; b. splicing the plurality of small-size seed crystals to form a large-size composite seed crystal; c. performing single crystal growth on the composite seed crystal, wherein in the single crystal growth process, a single crystal region with a growth advantage gradually expands and dominates through crystal direction competition; d. processing the grown single crystal region with the expanded and dominant single crystal into a new seed crystal for splicing and growth in the next round; and e. repeating steps b-d to obtain a large-size single crystal. The method ingeniously bypasses the problem of a traditional expanding process through a strategy of "dividing the whole into parts and iterative optimization", can prepare a high-quality single crystal with a size far greater than that of an initial seed crystal on the basis of a small-size seed crystal at a low cost, and provides a brand-new and effective technical path for a size breakthrough of gallium oxide and other single crystals.

A dual-mode asymmetric P-I-N perovskite radiation detector and its fabrication method are disclosed, belonging to the field of radiation detector technology. The method first involves preparing a perovskite single-crystal precursor solution. A small amount of this solution is used for seed crystal growth at a constant temperature, with the seed crystal serving as the seed for CsPbBr3 single-crystal growth on a P-type substrate. Next, a MAPbBr3 solution is prepared, and MAPbBr3 single crystals are grown to form the I layer. Finally, MAPbBr3 (Bi) is prepared... 3+ A doped solution was used to grow MAPbBr3 (Bi) as the N-layer. 3+ A dual-mode asymmetric P-I-N perovskite radiation detector is obtained by fabricating top and bottom electrodes using a doped single crystal. This invention utilizes the forward conduction and reverse cutoff characteristics of the P-I-N structure. When a negative voltage is applied to the N layer for forward bias, X-rays incident on the P layer are used for radiation detection, exciting the photoconductivity gain and achieving a sensitivity far exceeding that of CsPbBr3 single crystals; simultaneously, MAPbBr3 (Bi 3+ The doped single crystal has a natural shielding effect on soft X-rays, enabling high-sensitivity detection of hard X-rays in the I layer when X-rays are incident on the N layer with positive pressure and reverse P-I-N bias.

The application discloses a heat treatment device for high-concentration magnesium-doped lithium tantalate single crystal growth, and relates to the field of high-concentration magnesium-doped lithium tantalate single crystal growth. The heat treatment device comprises a base, a tank body is arranged at the bottom of the base, a quartz crucible is arranged in the tank body, a circular ring plate is arranged at the top of the quartz crucible, a sliding groove is arranged on the inner wall of the circular ring plate, a wedge-shaped block is arranged in the sliding groove, a ring-shaped block plate is arranged at the tail end of the wedge-shaped block, a second threaded ring is fixed to the top inside the circular ring plate, the second gear drives the first threaded ring to rotate, the first threaded ring drives the second threaded ring to move downwards, the second threaded ring drives the circular ring plate to move downwards, the bottom of the circular ring plate extrudes the liquid after high-temperature dissolution in the quartz crucible, and the steam pocket in the liquid is extruded out.

The invention relates to the field of semiconductor material manufacturing, in particular to a doping and supplementary doping method and system for single crystal growth and single crystal growth equipment. The doping and supplementary doping method for single crystal growth comprises the following steps: (a) monitoring process parameters and process events in a single crystal growth process; (b) when at least one preset doping supplementing triggering condition is met, triggering a doping supplementing process; (c) calling a preset high-temperature duration calculation rule according to the triggered doping supplementing type, and calculating effective high-temperature duration; (d) on the basis of the effective high-temperature duration, determining a supplementary doping amount; and (e) executing doping supplement operation, and adding the doping agent with the determined doping supplement amount into the single crystal furnace. According to the doping and supplementing method for single crystal growth, the triggering condition is more accurate, and false supplementing / missing supplementing is avoided; high-temperature duration calculation is more scientific and adapts to multiple scenes; the operation process is standardized, and personal errors are reduced.

The application discloses a kind of direct pulling silicon single crystal phase transition surface heat flux solving method, first in the position of the observation window of silicon single crystal growth equipment installs temperature sensor, to measure and obtain the temperature of crystal surface measuring point, and establish silicon crystal two-dimensional axis symmetry heat conduction control equation and each boundary condition;Then the silicon crystal two-dimensional axis symmetry heat conduction control equation established is discretized, and iterative solution is solved using finite difference method, and the silicon crystal two-dimensional axis symmetry direct heat transfer model with boundary heat flux as input and measuring point temperature as output is obtained;Finally, an inverse heat transfer model capable of solving the phase transition surface heat flux is established, with the actual measured crystal surface temperature as input, and by continuously optimizing the heat flux information at the current time, the optimal estimation value of the heat flux at the current time is obtained as output. The application solves the problem that the phase transition surface heat flux cannot be directly measured and cannot be obtained in real time in the prior art.

The present embodiment relates to a method for measuring a melt gap, which can improve the measurement accuracy of the melt gap using a reflection image of a scale load. According to one aspect of the embodiment, there is provided a method of measuring a melt gap for single crystal growth, the method including: a first step of acquiring an image of a scale bar and a reflection image of the scale bar in a silicon melt during single crystal ingot growth; a second step of correcting a shape of the reflection image to a regular ellipse if the shape of the reflection image acquired in the first step is an irregular ellipse; and a third step of calculating a distance between the reflection image corrected in the second step and the scale bar as a melt gap.

The application discloses a kind of multi-mode image analysis systems of straight pull silicon single crystal growth interface, belong to image analysis technical field, specifically include: manifold mapping module obtains solid-liquid interface visible light sequence and infrared sequence, visible light sequence and infrared sequence are mapped to continuous manifold space;Characteristic extraction module extracts the reflection profile vector of visible light sequence and the temperature gradient vector of infrared sequence;Offset solving module solves the relative time offset between modal;Matrix generation module constructs cross-modal graph neural network according to relative time offset, generates deformation compensation matrix;Boundary reconstruction module applies deformation compensation matrix to reflection profile vector and temperature gradient vector, reconstructs the cross-modal alignment boundary feature under oscillation environment;Tensor fusion module carries out tensor fusion calculation to cross-modal alignment boundary feature, outputs micro boundary coordinate set, and the application greatly improves the accuracy of crystal diameter microcosmic change machine vision identification.

The invention relates to the technical field, in particular to a crystal transition and crucible transition coordinated regulation and control system based on oxygen and carbon content feedback, and belongs to the technical field of single crystal growth. Aiming at the defects of lack of multi-parameter linkage, regulation and control non-stage pertinence and no effect verification in the prior art, the system comprises five modules, namely an oxygen-carbon time sequence data acquisition module, an oxygen-carbon feature extraction module, a steering coordinated regulation and control module, a rotating speed parameter correction module and a regulation and control effect verification module. The system integrates oxygen and carbon content, growth stage identification and in-furnace temperature and pressure parameters, extracts oxygen and carbon dynamic characteristics in stages, cooperatively regulates and controls the rotation direction, time sequence and rotation speed difference of crystal rotation and crucible rotation, and verifies the regulation and control effect through uniformity comparison. According to the invention, deep synergy of oxygen-carbon feedback and mechanism regulation and control is realized, the regulation and control pertinence and accuracy are improved, the single crystal growth environment is stabilized, the cultivation of a single crystal material with high lattice regularity is assisted, and the requirements of the high-tech field on a core base material are met.

The application provides a multi-variable monitoring method for a Czochralski silicon single crystal growth process, and belongs to the technical field of the Czochralski silicon single crystal growth process. The method comprises the following steps: synchronously collecting and preprocessing time series data of various process variables in the Czochralski silicon single crystal growth process to obtain a multi-variable time series matrix; a multi-scale sliding window strategy is used to extract slow features from the multi-variable time series matrix, and static slow feature matrices and dynamic slow feature matrices are sequentially constructed; a static slow feature vector and a dynamic slow feature vector at each time step are spliced into a fused slow feature vector, all fused slow feature vectors form a fused slow feature matrix, and the fused slow feature matrix is divided into a fused training set and a fused test set; an autoencoder network model is constructed, and the autoencoder network model is trained and tested to obtain a multi-variable monitoring result. The application can realize accurate real-time monitoring of the Czochralski silicon single crystal growth process in a complex environment.

The invention discloses a cleaning assembly and a single crystal growth furnace, and relates to the technical field of single crystal furnace cleaning.The cleaning assembly comprises an operation box, a plurality of sliding blocks are movably connected to the side face of the operation box in an inserted mode, the ends, away from the operation box, of the sliding blocks are connected with adsorption boxes, and a plurality of sets of bristles are distributed on the side walls of the adsorption boxes; a plurality of sets of adsorption holes are formed in the side, close to the bristles, of the adsorption box, the adsorption holes and the bristles are alternately arranged, a plurality of ion blower guns are connected to the side face of the operation box, and an air inlet of each ion blower gun is connected with a nitrogen cylinder. The device has the advantages that the ion blower gun works in the sweeping process, ions are accurately blown to the surface of an object with static electricity through stable airflow formed by ionized gas, the static electricity is removed, the ion blower gun is used for neutralizing the static electricity, the bristles are used for physical sweeping, and the dust collector is used for immediate suction. And the dust removal effect is enhanced.

The invention provides a control method for stabilizing the temperature gradient in the single crystal growth process, and relates to the technical field of semiconductor crystal pulling, in the crystal pulling process, the actual liquid opening distance and the target liquid opening distance in the current period are obtained by fixing the pulling speed of each stage to be constant; the deviation value delta Gap between the actual liquid opening distance and the target liquid opening distance in the current period is calculated; calculating the crucible following liquid opening distance adjusting speed based on the compensation proportionality coefficient, the crucible intervention speed and the deviation value delta Gap; the actual crucible lifting speed of the current period is calculated based on the crucible-following liquid opening distance adjusting speed and the crucible lifting set speed, the actual crucible lifting speed of the current period is output so that the liquid opening distance can be compensated in real time, and the fluctuation range of the liquid opening distance is controlled; wherein the actual crucible lifting speed in the current period is calculated according to the compensation proportionality coefficient, the crucible intervention speed and the deviation value delta Gap, so that the fluctuation amplitude of the liquid opening distance is controlled by controlling the liquid opening distance adjustment amplitude in the crystal pulling process, the change amplitude of the axial temperature gradient is reduced, and the temperature gradient is stable in the single crystal growth process.

A single crystal growth method, a single crystal growth device and a control apparatus therefor. The method comprises: during a constant-diameter growth stage, denoting as D=F0(t) an initial function between the actual diameter of a crystal ingot and time t; when F0(t) satisfies a preset condition, locking the crystal pulling rate, and performing piecewise correction on the initial function by using measurement results of the actual diameter of the crystal ingot at subsequent n different measurement moments in sequence, so as to obtain a corrected piecewise function D=Fh(t); calculating F'h(t) at a corresponding moment; and comparing F'h(t) / (Ah*ωh) with a set value x and regulating the heating power in a single crystal furnace.

The invention discloses a photoelectric detector based on two-dimensional / three-dimensional perovskite lamination and a preparation method thereof, and belongs to the technical field of photoelectric detectors. The photoelectric detector is composed of a heterojunction structure, an electron transport layer, a hole transport layer, a transparent electrode and a metal electrode, wherein the heterojunction structure is prepared by combining MAPbI3 perovskite thin single crystals and two-dimensional BA2PbI4, and the electron transport layer, the hole transport layer, the transparent electrode and the metal electrode are located on the two sides. According to the method, an opening is controlled through silica gel sealing on a perovskite thin single crystal growth device, a solvent is slowly volatilized at a certain temperature to prepare seed crystal grains, then the temperature is increased for continuous growth until the size is proper, and single crystal preparation is completed. According to the method, the MAPbI3 perovskite single crystal with good crystallinity and regular morphology and the BA2PbI4 thin crystal which grows rapidly and is prepared uniformly can be prepared, the acetonitrile and the BA2PbI4 can doubly passivate MAPbI3, and the obtained detector can effectively reduce dark current and obtain good photoelectric detection performance.

The present application relates to a kind of Bi-doped rare earth iron garnet body single crystal growth techniques without substrate, comprising the following steps: raw material preparation, melt preparation, melt is cooled to crystal growth temperature, after melt temperature stabilizes, slowly lower the seed crystal rod installed with seed crystal, with melt, seed crystal rotates at a certain speed;During growth, crystal growth is carried out according to the set variable speed cooling curve, and block crystal is obtained after growing for a period of time;Block crystal is pulled out from melt, and slowly cooled to room temperature, and Bi-doped rare earth iron garnet body single crystal is obtained.The present application obtains large-size block single crystal, gets rid of the dependence of existing Faraday optical rotator growth on substrate, and reduces production cost.The present application can obtain Faraday optical rotator which is thinner than existing product thickness at the same wavelength, further reducing the volume.Moreover, multiple surfaces are simultaneously grown, and larger size crystal is obtained.

The invention belongs to the technical field of crystal growth, and particularly relates to a Cs3Cu2I5 single crystal growth method. The method specifically comprises the following steps: taking cesium iodide and cuprous iodide as precursors, carrying out stirring reaction on the precursors and lewis acid in a polar aprotic solvent, hydrolyzing the lewis acid to generate an acid environment, inhibiting Cu < + > oxidation, and meanwhile, forming uniformly dispersed colloidal particles to obtain a precursor solution; and adding an anti-solvent into the precursor solution to enable the precursor solution to reach a supersaturated state, filtering, and carrying out single crystal growth by adopting an inverse temperature crystallization method. Lewis acid is added into the precursor solution, oxidation of Cu < + > is inhibited by utilizing a weak acid environment generated by hydrolysis of the Lewis acid, and the colloid stability of the precursor is improved, so that growth of the high-quality large-size Cs3Cu2I5 single crystal is promoted. The method is simple and convenient to operate and easy to control, can effectively improve the scintillation luminescence performance of the single crystal, and has a wide application prospect.

This invention discloses a method for large-size ammonium fluoroborate single crystal vapor phase growth, comprising the following steps: weighing two or more compounds containing NH4, B, O, and F as raw materials in a stoichiometric ratio of 1:4:6:1, mixing them thoroughly, adding a transport agent to obtain an initial mixture, and loading the initial mixture into a crystallization vessel; during the crystal growth stage, seed crystals or suspended seed crystals are selected by geometric selection and temperature screening among the grains; the crystallization vessel is dynamically heated within the temperature gradient zone of a vertical tube furnace, the dynamic heating being achieved by independently raising or lowering the temperatures of the high-temperature and low-temperature zones to dynamically control the temperature gradient of the crystal growth zone, so as to match it with the temperature gradient required at each stage of the crystal growth process; the raw materials crystallize in the crystal growth zone under the transport agent, resulting in large-size ammonium fluoroborate crystals. This invention produces large-size single crystals, is simple to operate, and highly practical, representing a superior ammonium fluoroborate single crystal growth process.