Method and apparatus for preparing major diameter single crystal

A single crystal and heating device technology, applied in the directions of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as insufficient, and achieve the effects of low preparation cost and reduced material loss

Inactive Publication Date: 2006-10-18
SCHOTT AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology allows for better control over how much energy goes into producing materials through controlled processes like sintering. By placing two parallel conductive wires next to each others on top of another layer of ceramic powder, which helps distribute evenly across the entire surface area where the process takes place during manufacturing. When these layers solidify together they form a strong bond without any gaps between them. Additionally, the use of multiple heaters placed alongside each other also improves efficiency. Overall, this new technique provides technical benefits including improved productivity rates due to faster processing times, lower costs associated with raw materials used, and increased flexibility in controlling the properties of resulting products.

Problems solved by technology

Technological Problem: Current Suspendzone Method uses suspended zones but has limitations in terms of productivity because they require long periods during manufacturing. Additionally, current methods involve multiple steps involving different types of equipment, leading to low yields and increased costs.

Method used

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  • Method and apparatus for preparing major diameter single crystal
  • Method and apparatus for preparing major diameter single crystal
  • Method and apparatus for preparing major diameter single crystal

Examples

Experimental program
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Embodiment Construction

[0034] figure 1 Schematic representation of the apparatus used to grow high melting point single crystals with a diameter > 50 mm. Usually all kinds of crystals can be grown in this device and all common materials for crystal growth can be used. In addition, single crystals of any size can also be prepared with this device. The currently used preforms have a diameter of 10 mm to 100 mm, and the numerical values ​​given here are only exemplary values, not upper or lower limit values ​​of the method.

[0035] With the help of figure 1 Described for growing sapphire (Al 2 o 3 ) embodiment of the device.

[0036] First, the culture rod 3 with a diameter of 100mm used in the embodiment is installed inside the processing container 2 with a clamp 7, wherein the clamp 7 passes through at a speed of 0-100 minutes -1 The rotation drive / translation drive 12 can rotate around the rotation axis 8 and perform vertical processing at 0-40mm / h. Culture rod 3 is made of high-purity Al si...

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PUM

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Abstract

The present invention relates to an apparatus and method for growing a high melting point single crystal having a predetermined orientation, which is grown from a culture rod (3) by a floating zone method or a suspension zone method. The device comprises: culture rods (3) and crystal nuclei (4), a strip-shaped resistance heating type heating strip (6) provided with at least one opening is installed between its ends and next to it, and it is heated To the crystal melting temperature, so as to form the melting zone (5), drive mechanism (8, 11), so that relative movement occurs between the heating belt (6) and the crystal nucleus (4) and the culture rod (3) that are installed next to the heating belt , the molten liquid material of the culture rod (3) is obtained through each opening of the heating belt, and causes single crystal growth on the crystal nucleus (4) by cooling, and another heating device (15, 16), which is arranged at the melting The vicinity of the zone (5) in order to set the temperature gradient within the range of the melting zone (5). In order to reduce the temperature gradient in the melting zone, said further heating device (15, 16) comprises at least one heating coil (17, 19), which is driven with radio frequency, wherein the heating strip (6) and the respective heating coil are thus mounted opposite each other (17, 19) so that radio frequency radiation is coupled on the heating strip in order to generate an additional inductive heat input in the heating strip and to set a temperature gradient across the melting zone (5). This enables an inductive heat input into the heating strip, which can be varied or varied in a targeted manner.

Description

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Claims

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Application Information

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Owner SCHOTT AG
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