358797 results about "Process engineering" patented technology

A business methodology for optimizing energy procurement energy demand (usage) and energy supply for a facility or complex. After ascertaining a baseline model, energy consumption is monitored and adjusted to reflect dynamic economic factors of operations. With the accumulation of data, contract negotiations with energy suppliers may provide further energy savings. Over time and patterns of usage determined further savings and optimization in energy, equipment, staffing and other operational areas are obtained. Remote access provides efficient monitoring of established systems.

Methods and systems are provided for optimizing the control of energy supply and demand. An energy control unit includes one or more algorithms for scheduling the control of energy consumption devices on the basis of variables relating to forecast energy supply and demand. Devices for which energy consumption can be scheduled or deferred are activated during periods of cheapest energy usage. Battery storage and alternative energy sources (e.g., photovoltaic cells) are activated to sell energy to the power grid during periods that are determined to correspond to favorable cost conditions.

The present invention relates generally to systems and methods for electrochemical sensing. Particularly, the invention relates to optimizing bias settings in an electrode system to increase oxygen production at the working electrode.

Provided is a gas separation type showerhead for effective energy supply. The gas separation type showerhead includes: a gas supply module to which a first gas and a second gas are separately supplied; a gas separation module in which the supplied first and second gases are separately dispersed; and a gas injection module which is a multi-hollow cathode having a plurality of holes and in which the first and second gases separately dispersed are ionized in the holes to be commonly dispersed.

A faceplate for a showerhead of a semiconductor wafer processing system is provided. The faceplate has a plurality of gas passageways to provide a plurality of gases to the process region without commingling those gases before they reach the processing region within a reaction chamber. The showerhead includes a faceplate and a gas distribution manifold assembly. The faceplate defines a plurality of first gas holes that carry a first gas from the manifold assembly through the faceplate to the process region, and a plurality of channels that couple a plurality of second gas holes to a radial plenum that receives the second gas from the manifold assembly. The faceplate and the manifold assembly are each fabricated from a substantially solid nickel material.

A pair of openable/closable jaws, an insertion section configured to support the pair of jaws, an operation section configured to open/close the pair of jaws, a heat generating element provided in a jaw, that generates heat by supply of electricity, electricity supply means configured to supply electricity to the heat generating element, and damage protecting means for protecting the electricity supply means from being damaged, are provided.

A process is disclosed for the in situ conversion and recovery of heavy crude oils and natural bitumens from subsurface formations using either a continuous operation with one or more injection and production boreholes, which may include horizontal boreholes, or a cyclic operation whereby both injection and production occur in the same boreholes. A mixture of reducing gases, oxidizing gases, and steam are fed to downhole combustion devices located in the injection boreholes. Combustion of the reducing gas-oxidizing gas mixture is carried out to produce superheated steam and hot reducing gases for injection into the formation to convert and upgrade the heavy crude or bitumen into lighter hydrocarbons. Communication between the injection and production boreholes in the continuous operation and fluid mobility within the formation in the cyclic operation is induced by fracturing or related methods. In the continuous mode, the injected steam and reducing gases drive upgraded hydrocarbons and virgin hydrocarbons to the production boreholes for recovery. In the cyclic operation, wellhead pressure is reduced after a period of injection causing injected fluids, upgraded hydrocarbons, and virgin hydrocarbons in the vicinity of the boreholes to be produced. Injection and production are then repeated for additional cycles. In both operations, the hydrocarbons produced are collected at the surface for further processing.

A method and apparatus for a gas delivery system to deliver a precursor from a vessel to a process chamber via a process gas produced by flowing a first carrier gas into the vessel and combining with a second carrier gas flowing through a bypass around the vessel and a precursor monitoring apparatus disposed between the process chamber and the vessel. The precursor monitoring apparatus has a gas analyzer to generate a first signal indicative of a concentration of the precursor in the process gas or to a signal indicative of a flow rate of the process gas.

A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

A method of and apparatus for regulating carbon dioxide using a pre-injection assembly coupled to a processing chamber operating at a supercritical state is disclosed. The method and apparatus utilize a source for providing supercritical carbon dioxide to the pre-injection assembly and a temperature control element for maintaining the pre-injection region at a supercritical temperature and pressure.

A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber. The reaction chamber defines a reaction space in which a semiconductor substrate is disposed for processing. The exhaust assembly is operatively connected to the reaction chamber for withdrawing unreacted process gases and effluent from the reaction space.

Disclosed is a substrate processing apparatus that includes: a processing chamber that accommodates a substrate; and a raw material supply system that sublimates a solid raw material to generate a gas raw material used for processing of the substrate, and supplies the generated gas raw material to the processing chamber. The raw material supply system includes: a solid raw material container that stores the solid raw material; a first piping connected between the solid raw material container and the processing chamber; and a second piping connected with the solid raw material container and equipped with an attachment portion to which a raw material replenishing container that holds the solid raw material for replenishment is attached.

An apparatus and related method for distributing process gas in a vapor deposition system is described. The gas distribution system includes a vertically movable piston within its plenum, and the movement of the piston controls the flow rate of process gas through the vapor distribution plate of the gas distribution system. The piston can be used to accommodate changes in processing parameters that affect flow characteristics and to create edge-enhanced, uniform, and center-enhanced profiles of deposited material on a substrate without the need to replace the vapor distribution plate.

A method, computer readable medium, and system for vapor deposition on a substrate that introduce a first process gas composition to a process space according to a first vapor deposition process, deposit a first film on the substrate, introduce a second process gas composition into a second process space different in size than the first process space, and deposit a second film on the substrate from the second process gas composition. As such, the system includes a process chamber including a first process space having a first volume. The process chamber further includes a second process space that includes at least a part of the first process space and that has a second volume different from the first volume. The first process space is configured for a first chemical vapor deposition, and the second process space is configured for a second chemical vapor deposition.

Methods and apparatus for calibrating a plurality of gas flows in a substrate processing system are provided herein. In some embodiments, a substrate processing system may include a cluster tool comprising a first process chamber and a second process chamber coupled to a central vacuum transfer chamber; a first flow controller to provide a process gas to the first process chamber; a second flow controller to provide the process gas to the second process chamber; a mass flow verifier to verify a flow rate from each of the first and second flow controllers; a first conduit to selectively couple the first flow controller to the mass flow verifier; and a second conduit to selectively couple the second flow controller to the mass flow verifier.

In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.