366716 results about "Process engineering" patented technology

A business methodology for optimizing energy procurement energy demand (usage) and energy supply for a facility or complex. After ascertaining a baseline model, energy consumption is monitored and adjusted to reflect dynamic economic factors of operations. With the accumulation of data, contract negotiations with energy suppliers may provide further energy savings. Over time and patterns of usage determined further savings and optimization in energy, equipment, staffing and other operational areas are obtained. Remote access provides efficient monitoring of established systems.

Methods and systems are provided for optimizing the control of energy supply and demand. An energy control unit includes one or more algorithms for scheduling the control of energy consumption devices on the basis of variables relating to forecast energy supply and demand. Devices for which energy consumption can be scheduled or deferred are activated during periods of cheapest energy usage. Battery storage and alternative energy sources (e.g., photovoltaic cells) are activated to sell energy to the power grid during periods that are determined to correspond to favorable cost conditions.

The present invention relates generally to systems and methods for electrochemical sensing. Particularly, the invention relates to optimizing bias settings in an electrode system to increase oxygen production at the working electrode.

Provided is a gas separation type showerhead for effective energy supply. The gas separation type showerhead includes: a gas supply module to which a first gas and a second gas are separately supplied; a gas separation module in which the supplied first and second gases are separately dispersed; and a gas injection module which is a multi-hollow cathode having a plurality of holes and in which the first and second gases separately dispersed are ionized in the holes to be commonly dispersed.

The present invention relates to a delivery system for vaporizing and delivering vaporized solid and liquid precursor materials at a controlled rate having particular utility for semiconductor manufacturing applications. The system includes a vaporization vessel, a processing tool and a connecting vapor line therebetween, where the system further includes an input flow controller and / or an output flow controller to provide a controlled delivery of a vaporizable source material to the vaporization vessel and a controlled flow rate of vaporized source material to the processing tool.

A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space. The first assembly is configured to be maintained at a first temperature and the second assembly is configured to be maintained at a reduced temperature lower than the first temperature.

A pair of openable / closable jaws, an insertion section configured to support the pair of jaws, an operation section configured to open / close the pair of jaws, a heat generating element provided in a jaw, that generates heat by supply of electricity, electricity supply means configured to supply electricity to the heat generating element, and damage protecting means for protecting the electricity supply means from being damaged, are provided.

A process is disclosed for the in situ conversion and recovery of heavy crude oils and natural bitumens from subsurface formations using either a continuous operation with one or more injection and production boreholes, which may include horizontal boreholes, or a cyclic operation whereby both injection and production occur in the same boreholes. A mixture of reducing gases, oxidizing gases, and steam are fed to downhole combustion devices located in the injection boreholes. Combustion of the reducing gas-oxidizing gas mixture is carried out to produce superheated steam and hot reducing gases for injection into the formation to convert and upgrade the heavy crude or bitumen into lighter hydrocarbons. Communication between the injection and production boreholes in the continuous operation and fluid mobility within the formation in the cyclic operation is induced by fracturing or related methods. In the continuous mode, the injected steam and reducing gases drive upgraded hydrocarbons and virgin hydrocarbons to the production boreholes for recovery. In the cyclic operation, wellhead pressure is reduced after a period of injection causing injected fluids, upgraded hydrocarbons, and virgin hydrocarbons in the vicinity of the boreholes to be produced. Injection and production are then repeated for additional cycles. In both operations, the hydrocarbons produced are collected at the surface for further processing.

A method and apparatus for a gas delivery system to deliver a precursor from a vessel to a process chamber via a process gas produced by flowing a first carrier gas into the vessel and combining with a second carrier gas flowing through a bypass around the vessel and a precursor monitoring apparatus disposed between the process chamber and the vessel. The precursor monitoring apparatus has a gas analyzer to generate a first signal indicative of a concentration of the precursor in the process gas or to a signal indicative of a flow rate of the process gas.

An apparatus and method for a gas distribution plate is provided. The gas distribution plate has a first manifold which includes a plurality of concentric channels for providing at least two distinct gases to a processing zone above a substrate. A portion of the plurality of channels perform a thermal control function and are separated from the remaining channels, which provide separated gas flow channels within the gas distribution plate. The gas flow channels are in fluid communication with a second manifold which includes a plurality of concentric rings. Apertures formed in the rings are in fluid communication with the gas flow channels and the processing zone. The gases are provided to the processing zone above the substrate, and do not mix within the gas distribution plate.

An apparatus to manufacture a semiconductor, in which distribution of process gases supplied to a reaction region in a reaction chamber is uniform, includes a gas supply nozzle to supply process gases to a semiconductor substrate in the reaction chamber, wherein the gas supply nozzle includes a first supply channel formed in a longitudinal direction, and first outlet channels formed at an outlet of the first supply channel such that the first outlet channels are inclined with respect to the direction of the first supply channel at a designated angle to diffuse the process gas supplied through the first supply channel.

A method for performing uniform processing in multiple reaction chambers includes (a) conducting a cycle constituted by steps in each reaction chamber according to the order of the reaction chambers at which the steps are conducted; and then (b) conducting the steps in each reaction chamber after changing the immediately prior order of the reaction chambers at which the steps are conducted; and then (c) repeating process (b) until a target treatment is complete at the multiple reaction chambers. The target treatment conducted on a substrate in each reaction chamber is the same.

A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

A nonlinear model-based predictive temperature control system is described for use in thermal process reactors. A multivariable temperature response is predicted using a nonlinear parameterized model of a thermal process reactor. The nonlinear parameterized model is implemented using a neural network. Predictions are made in an auto-regressive moving average fashion with a receding prediction horizon. Model predictions are incorporated into a control law for estimating the optimum future control strategy. The high-speed, predictive nature of the controller renders it advantageous in multivariable rapid thermal processing reactors where fast response and high temperature uniformity are needed.

A control unit is attached to or embedded within a refrigeration appliance to monitor electric power voltage and / or frequency supplied by the mains. If the unit detects a sag or peak in either the voltage or frequency, the control unit either separates any high demand elements of the appliance from the mains to reduce demand in a sag or energizes the elements in a peak. When the control system separates the refrigeration compressor from the mains, a food spoilage monitoring system monitors the food storage compartments. This system utilizes food industry temperature and time algorithms to ensure the food does not spoil. If food spoilage could occur, the unit re-energizes the compressor to allow it to lower the temperature provided the power is sufficient to operate the compressor unit without damaging it. Once the sensed temperature is restored to a safe level, the unit separates the compressor from the mains.

A method of and apparatus for regulating carbon dioxide using a pre-injection assembly coupled to a processing chamber operating at a supercritical state is disclosed. The method and apparatus utilize a source for providing supercritical carbon dioxide to the pre-injection assembly and a temperature control element for maintaining the pre-injection region at a supercritical temperature and pressure.

A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber. The reaction chamber defines a reaction space in which a semiconductor substrate is disposed for processing. The exhaust assembly is operatively connected to the reaction chamber for withdrawing unreacted process gases and effluent from the reaction space.

The invention provides a lubricating composition containing an oil of lubricating viscosity, an oil soluble molybdenum compound, and an ashless antiwear agent. The invention further provides for a new antioxidant. The lubricating composition is suitable for lubricating an internal combustion engine.

Gas-phase reactors and systems are disclosed. Exemplary reactors include a reaction chamber having a tapered height. Tapering the height of the reactor is thought to reduce a pressure drop along the flow of gasses through the reactor. Exemplary reactors can also include a spacer within a gap to control a flow of gas between a region and a reaction chamber.

Disclosed is a substrate processing apparatus that includes: a processing chamber that accommodates a substrate; and a raw material supply system that sublimates a solid raw material to generate a gas raw material used for processing of the substrate, and supplies the generated gas raw material to the processing chamber. The raw material supply system includes: a solid raw material container that stores the solid raw material; a first piping connected between the solid raw material container and the processing chamber; and a second piping connected with the solid raw material container and equipped with an attachment portion to which a raw material replenishing container that holds the solid raw material for replenishment is attached.

An apparatus and related method for distributing process gas in a vapor deposition system is described. The gas distribution system includes a vertically movable piston within its plenum, and the movement of the piston controls the flow rate of process gas through the vapor distribution plate of the gas distribution system. The piston can be used to accommodate changes in processing parameters that affect flow characteristics and to create edge-enhanced, uniform, and center-enhanced profiles of deposited material on a substrate without the need to replace the vapor distribution plate.

An apparatus and related method for distributing process gas in a vapor deposition system is described. The gas distribution system includes a vertically movable piston within its plenum, and the movement of the piston controls the flow rate of process gas through the vapor distribution plate of the gas distribution system. The piston can be used to accommodate changes in processing parameters that affect flow characteristics and to create edge-enhanced, uniform, and center-enhanced profiles of deposited material on a substrate without the need to replace the vapor distribution plate.

A PAP system for delivering breathable gas to a patient includes a flow generator to generate a supply of breathable gas to be delivered to the patient; a humidifier including a heating plate to vaporize water and deliver water vapor to humidify the supply of breathable gas; a heated tube configured to heat and deliver the humidified supply of breathable gas to the patient; a power supply configured to supply power to the heating plate and the heated tube; and a controller configured to control the power supply to prevent overheating of the heating plate and the heated tube.

A method and apparatus for the use of individual vertically stacked ALD or CVD reactors. Individual reactors are independently operable and maintainable. The gas inlet and output are vertically configured with respect to the reactor chamber for generally axi-symmetric process control. The chamber design is modular in which cover and base plates forming the reactor have improved flow design.