Massively parallel atomic layer deposition/chemical vapor deposition system

Abstract

A method and apparatus for the use of individual vertically stacked ALD or CVD reactors. Individual reactors are independently operable and maintainable. The gas inlet and output are vertically configured with respect to the reactor chamber for generally axi-symmetric process control. The chamber design is modular in which cover and base plates forming the reactor have improved flow design.

Description

RELATED APPLICATIONS [0001] The present application is a Divisional of U.S. patent application Ser. No. 10 / 282,609, filed Oct. 29, 2002, entitled “Massively Parallel Atomic Layer Deposition / Chemical Vapor Deposition System”, which claims priority to U.S. Provisional Application No. 60 / 346,005, filed on Oct. 29, 2001. This patent application is hereby incorporated by reference in its entirety.FIELD OF THE INVENTION [0002] The present invention relates to semiconductor processing and, more particularly, to an apparatus and method for providing a massively parallel ALD / CVD system. BACKGROUND OF THE RELATED ART [0003] Chemical Vapor Deposition (CVD) is a widely used deposition process for the growth of thin films on various substrates, including semiconductor wafers. As microelectronics device dimensions are reduced, or scaled down, CVD is an attractive method for the deposition of conformal films over complex device topography. In the field of atomic / molecular level film deposition, a ...

AI Technical Summary

Benefits of technology

"The patent describes a system for depositing materials on semiconductor wafers using a vertically stacked arrangement of multiple reactors. The low profile of the reactors allows them to be stacked, and separate load lock units can be used for each reactor to position the wafers vertically. The system also has separate gas inlet and exhaust at the top and bottom of the chamber, which provides a symmetrical gas flow across the wafer during processing. The reactor chambers are formed by a top plate and bottom plate with a shaped recessed region to improve gas flow. The low profile reactors have integrated conduits for input and exhaust, and the system allows for separate processing of multiple wafers. The technical effects of this system include improved gas flow, reduced vertical height, and improved efficiency for semiconductor wafer processing."

Problems solved by technology

In reference to ALD processes, batch ALD reactors are believed to be difficult to maintain relative to single wafer reactors, which historically have had the capability for in-situ cleans, at least films made by CVD.

However, one critical limitation for wider acceptance of ALD is the fact that high throughput processes are difficult to realize with single reactor systems.

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