858 results about "Atomic layer deposition" patented technology

The invention is suitable for the field of atomic layer deposition, and discloses an atomic layer deposition process management method and system based on digital twinning, and the method comprises the steps: building a digital twinning model of an atomic layer deposition production system based on a multi-scale physical information neural network model; acquiring real-time reaction chamber process parameters and real-time state variables, and inputting the real-time reaction chamber process parameters and the real-time state variables into the digital twin model to obtain physical field distribution in the reaction chamber and a predicted growth state of a film on the surface of the substrate; based on the physical field distribution in the reaction cavity and the substrate surface film prediction growth state, decision analysis is carried out through a pre-trained reinforcement learning agent, and correction parameters used for optimizing the film growth quality are obtained; and generating a correction instruction based on the correction parameter, and updating the process parameter of the reaction cavity based on the correction instruction, so that the film on the surface of the substrate in the reaction cavity reaches the target film thickness and uniformity, and thus real-time intelligent closed-loop control of perception-prediction-decision-execution can be formed.

The invention discloses atomic layer deposition equipment and a deposition method, and the atomic layer deposition equipment comprises a reaction cavity; the first end of the main gas inlet pipeline is communicated with a reaction gas source, and the second end of the main gas inlet pipeline is communicated with the reaction cavity; the first end of the pressure control pipeline communicates with the main air inlet pipeline, and the second end communicates with the air pump; the first end of the inert gas pipeline is communicated with an inert gas source, and the second end is communicated with the reaction cavity; the first end of the exhaust pipeline is communicated with the reaction cavity, and the second end is communicated with the air pump. When the atomic layer deposition equipment introduces the reaction gas into the main gas inlet pipeline, the pressure in the pressure control pipeline is controlled to be greater than the pressure in the reaction cavity, so that the pressure of the reaction gas in the main gas inlet pipeline is rapidly increased in a short time, and the reaction gas is pressed into the reaction cavity and adsorbed on a substrate.

A component for use in a semiconductor processing chamber is provided. A metal or metal alloy component body has a process-facing surface. An intermediate aluminum oxide coating is disposed on the process-facing surface, the intermediate aluminum oxide coating being at least 99% pure by weight and having a porosity of less than 0.1% by volume, the intermediate aluminum oxide coating having a first thickness. A process-exposed layer is disposed on the intermediate aluminum oxide coating, the process-exposed layer comprising at least one of yttrium, hafnium, zirconium, lanthanum, magnesium, and a lanthanide, the process-exposed layer being at least 99% pure by weight, having a porosity of less than 0.1%, and having a second thickness, the second thickness being less than or equal to the first thickness.

The invention discloses an atomic layer deposition silicon-carbon composite material, a preparation method and application thereof, a core-shell coating structure composed of an inner core and an outer shell is adopted, the inner core is a multi-element doped silicon-carbon material, and the outer shell is a solid electrolyte composite layer; the mass ratio of the inner core to the shell is (80-95): (5-20); the solid electrolyte is deposited on the surface of the specific silicon carbon material through an atomic vapor deposition method, so that the expansion is reduced, and the cycle performance of the battery is improved.

The invention belongs to the field of thin films, and particularly discloses an atomic layer deposition method and a thin film prepared through the atomic layer deposition method. According to the deposition method, the reaction cavity, the two input pipeline systems, the outlet valve and the vacuum pump in the atomic layer deposition system are used for controlling precursor pulse deposition and inert gas purging conditions in the atomic deposition process, and the film deposition state is improved; the efficiency of purging and removing substances and impurity residues such as a precursor and a reaction product thereof is improved, the problem that the quality of a deposited film is affected by the impurity residues in a reaction system or on the surface of a sample in the film deposition process is avoided, the uniformity and compactness of film deposition and the coverage rate and conformal rate of a film on the surface of a base material hole are improved, the defects of the film are reduced, and the yield is improved. And the method can be applied to a substrate with a high aspect ratio structure to deposit the film, so that the purpose of manufacturing a large-size complicated special-shaped structure device is achieved.

Generally, examples are provided relating to filling gaps with a dielectric material, such as filling trenches between fins for Shallow Trench Isolations (STIs). In an embodiment, a first dielectric material is conformally deposited in a trench using an atomic layer deposition (ALD) process. After conformally depositing the first dielectric material, the first dielectric material is converted to a second dielectric material. In further examples, the first dielectric material can be conformally deposited in another trench, and a fill dielectric material can be flowed into the other trench and converted.

The invention discloses a negative electrode composite current collector of a non-negative electrode lithium battery and a preparation method of the negative electrode composite current collector. The preparation method comprises the following steps: preparing a metal nanoparticle-metal organic framework composite material MNP-MOF-NH2 by adopting a solvothermal method; the preparation method comprises the following steps: adding MNP-coated MOF-NH2, a conductive agent and a binder into a solvent, mixing and uniformly stirring to obtain a negative electrode coating slurry, coating the surface of a negative electrode current collector foil with the negative electrode coating slurry to form a first coating, placing the first coating in a reaction chamber of atomic layer deposition equipment, introducing a metal source and gas in an alternate feeding deposition mode to generate a layer of compact lithium-loving metal oxide, and carrying out vacuum drying to obtain the lithium-loving metal oxide negative electrode. And drying to obtain a double-gradient composite protective layer, namely the negative electrode composite current collector of the non-negative electrode lithium battery. According to the invention, a double-layer structure of a compact lithium-loving layer, a porous metal organic framework and a metal particle composite layer is constructed, and the upper lithium-loving metal oxide induces uniform nucleation of lithium, so that the deposition barrier is reduced. The network structure of the lower layer MOF provides a space limiting effect to accommodate and separate lithium deposition, in addition, polar groups contained in the MOF promote desolvation and transport of Li +, and metal nanoparticles accelerate ion / electron transport.

The invention discloses an atomic layer deposition method and structure for an aluminum fluoride enhanced aluminum oxide passivation layer of a TOPCon solar cell. The method comprises the steps that after a boron-doped layer is formed on the front face of a crystal silicon wafer, a passivation layer is formed on the boron-doped layer through an atomic layer deposition technology, specifically, Al2O3 deposition circulation is conducted with trimethyl aluminum as an aluminum source and H2O as an oxygen source, AlF3 deposition circulation with aluminum chloride as the aluminum source and HF or NH4F as a fluorine source is periodically inserted, the proportion of the number of deposition circulation times of AlF3 to the number of deposition circulation times of Al2O3 is 1: (1-10), and the passivation layer is formed on the boron-doped layer through the atomic layer deposition technology. And an alternating layer structure with the total thickness of 5-10 nm is formed. According to the invention, an AlF3 layer is periodically inserted in an Al2O3 deposition cycle, so that an Al2O3 / AlF3 superlattice structure is formed. According to the structure, the interface passivation effect is remarkably improved, hydrogen atom overflow is reduced, and the ultraviolet aging resistance is enhanced. The method is compatible with an existing ALD production line, is suitable for high-efficiency TOPCon battery manufacturing, and has a good industrial application prospect.

The invention relates to a high-performance hafnium-based ultrahigh-temperature ceramic-based composite material and a preparation method thereof. The method comprises the following steps: depositing pyrolytic carbon on the carbon fiber surface of a carbon fiber preform through a CVD (Chemical Vapor Deposition) method; preparing a hafnium oxide interface layer on the surface of the pyrolytic carbon through an atomic layer deposition method, and performing ultra-fast annealing treatment to form a pyrolytic carbon-hafnium oxide composite interface layer; carrying out a reaction with a matrix containing a pyrolytic carbon-hafnium oxide composite interface layer through an impregnation pyrolysis method; a hafnium carbide coating is prepared on the surface of the composite material matrix through a CVD method; and preparing a hafnium oxide coating on the surface of the hafnium carbide coating through an atomic layer deposition method, and carrying out ultra-fast annealing treatment to prepare the high-performance hafnium-based ultra-high-temperature ceramic-based composite material. According to the preparation method, the pyrolytic carbon-hafnium oxide composite interface layer is prepared by adopting an atomic layer deposition process and depending on ultra-fast annealing treatment, and meanwhile, the hafnium carbide-hafnium oxide composite coating is prepared, so that the mechanical property of the composite material in a high-temperature aerobic environment is remarkably improved.

A precursor dispensing system includes a source, an ampoule, a first valve, a second valve, a line charge volume container and a controller. The source supplies a liquid precursor. The ampoule receives the liquid precursor from the source. The first valve adjusts flow of the liquid precursor from the source to the ampoule. The second valve adjusts flow of a precursor vapor from the ampoule to a showerhead of a substrate processing chamber. The line charge volume container is connected to a conduit and stores a charge of the precursor vapor, where the conduit extends from the ampoule to the second valve. The controller: opens the first valve and closes the second valve to precharge the line charge volume container; and during a dose operation, open the second valve to dispense a bulk amount of the precursor vapor from the line charge volume container and into the substrate processing chamber.

The invention discloses a method for synthesizing a platinum-based nitrogen-doped graphdiyne catalyst based on an atomic layer deposition technology and application of the platinum-based nitrogen-doped graphdiyne catalyst. Firstly, hexabromobenzene and calcium carbide are subjected to vacuum ball milling, calcination and purification to obtain a graphdiyne carrier, then the graphdiyne carrier and melamine are mixed and calcined to achieve nitrogen doping of the carrier, and then loading of platinum nanoparticles is accurately controlled through an atomic layer deposition technology. According to the method, the characteristics of an atomic layer deposition technology are utilized, deposition parameters and the number of cycles are controlled, uniform distribution and size control of Pt nano-particles on porous graphdiyne are achieved, and a nitrogen-doped graphdiyne carrier and the platinum nano-particles have a synergistic effect. The platinum-based nitrogen-doped graphdiyne catalyst prepared by the invention has the specific surface area of 734.8 m < 2 > g < 1 > and the average pore size of 8.68 nm, and shows excellent electrocatalytic activity and dynamic performance in reaction.

The invention provides a high-stability electron transport layer and a perovskite solar cell. A preparation method of the electron transport layer comprises the following steps: evaporating a layer of fullerene (C60) on a substrate on which a hole transport layer and a perovskite thin film layer are prepared; a layer of graphite-like phase carbon nitride (g-C3N4) is spin-coated on the C60; and finally, depositing a layer of tin oxide (ALD-SnO2) by utilizing atomic layer deposition. The g-C3N4 has good electrical conductivity, not only can fill some gaps between C60 and ALD-SnO2, but also can interact with C60 and ALD-SnO2, so that the C60 and ALD-SnO2 are attached more tightly, and the interface stability is improved. The prepared high-stability electron transport layer is applied to a perovskite solar cell device, and the stability of a perovskite solar cell is remarkably improved.

The invention belongs to the technical field of optical thin film design and preparation, and particularly relates to a preparation method of a multilayer composite antireflection film on the surface of an optical lens. The preparation method comprises the step of sequentially performing atomic layer deposition on the surface of the optical lens to form the transition layer, the high-refractive-index layer, the low-refractive-index layer, the high-refractive-index layer and the packaging layer. According to the atomic layer deposition method, uniform coating can be achieved on the surfaces of aspherical lenses with different curvature radiuses, and five layers of oxide films are deposited through alternating pulse in an ALD pulse sequence with the structure of'substrate layer-transition layer-high refractive index layer-low refractive index layer-high refractive index layer-packaging layer '. And an excellent antireflection effect in a visible light wavelength range is realized. The atomic layer deposition is carried out at low temperature (25-150 DEG C), so that the atomic layer deposition can be directly coated on the high-molecular polymer lens, and the deformation of the base material due to high temperature is avoided; the method is especially suitable for different application scenes such as consumer electronics, personal protection and medical assistance.

The present application discloses a lithium iron manganese phosphate composite material, a preparation method therefor as well as a secondary battery. The lithium iron manganese phosphate composite material sequentially comprises a core, a first coating layer and a second coating layer, wherein the core comprises LixMnyFe1-y-zDzPO4 material, 1≤x≤1.05, 0<y<1, 0≤z<1, and D is a metal element; the first coating layer comprises LiaAlbMcOd material, 0<a≤1, 0<b<1, 0<c<1, 0<d<3, M comprises at least one of Y element, Zr element and Mg element, and the second coating layer comprises carbon. The method for preparing the lithium manganese iron phosphate composite material comprises: providing a core, which comprises a material having a chemical general formula LixMnyFe1-y-zDzPO4; preparing a first coating layer on the outer surface of the core utilizing an atomic layer deposition technology, the first coating layer comprises a material having a chemical general formula LiaAlbMcOd; and preparing a second coating layer on the outer surface of the first coating layer, the second coating layer comprises carbon.

The invention provides an epitaxial hafnium oxide-based ferroelectric capacitor and an atomic layer deposition preparation method thereof, and the preparation method comprises the steps: providing a substrate layer, and depositing a zirconia epitaxial buffer layer on the substrate layer through employing an atomic layer deposition technology; forming a hafnium oxide-based epitaxial ferroelectric layer on the zirconium oxide epitaxial buffer layer by adopting an atomic layer deposition process; photoresist is spin-coated on the hafnium oxide-based epitaxial ferroelectric layer, exposure and development are carried out, and the shape of a top electrode is defined; preparing a top electrode on the hafnium oxide-based epitaxial ferroelectric layer; and annealing by adopting a rapid annealing process to realize the ferroelectricity of the hafnium oxide-based epitaxial ferroelectric layer. According to the application, the zirconium oxide epitaxial buffer layer is arranged between the ferroelectric layer and the substrate layer, so that the hafnium oxide-based epitaxial ferroelectric layer grown through ALD presents a highly oriented epitaxial lattice structure, the leakage current of the hafnium oxide-based ferroelectric capacitor can be reduced, and the cycle performance of the capacitor is improved.

The invention provides a film layer preparation method and semiconductor process equipment. According to the film layer preparation method, a substrate is obtained, and thin film deposition is carried out on the substrate by adopting an atomic layer deposition technology; in the deposition process, multiple deposition layers are generated according to the number of cycles, and a film layer is formed through the multiple deposition layers; wherein after each deposition layer is generated, the particle cleaning step is executed, and the particle cleaning step comprises a first blowing action, an air exhaust action and a second blowing action which are executed in sequence. According to the film layer preparation mode, the particle cleaning step is added between the deposition layers, so that the problem of particles generated in the film layer deposition process is remarkably reduced, the situation that a user manually purges a chamber pipeline between wafer batches is avoided, continuous tape-out in the wafer machining process is achieved, manpower and time are saved, and the production efficiency is improved. And the productivity of semiconductor process equipment is improved.

The invention relates to the technical field of semiconductor packaging and micromachining, in particular to a defect-free electroplating filling method and system for a high-aspect-ratio glass through hole. The method comprises the following steps: preparing an ultrathin and compact copper seed composite layer with strong binding force on the inner wall of a glass through hole by adopting an atomic layer deposition (ALD) technology; preparing an electroplating solution containing a specific additive system; and implementing a segmented pulse electroplating strategy, and realizing defect-free copper filling from the bottom to the top of the through hole by regulating and controlling the current density, the pulse width and the intermittent time in stages and combining a reverse pulse technology. The system integrates ALD deposition, pulse electroplating and an electroplating liquid circulation system, and high precision and high yield in the filling process are ensured. The method effectively solves the problems of insufficient seed layer coverage, limited mass transfer, cavity / suture defects and the like in the filling of the glass through hole with the high depth-diameter ratio (greater than or equal to 20: 1), and is suitable for advanced packaging and manufacturing of large-size glass substrates (such as 510mm * 515mm).

The invention discloses a silicon photomultiplier and a preparation method thereof, belongs to the technical field of semiconductor device processing, and aims to solve the problems of lattice damage, channel effect, interface defects and the like caused by single-time high-dose ion implantation in the traditional process. Through the innovative processes of dose grading ion implantation, stepped cooling annealing, Gepre-amorphization processing, atomic layer deposition passivation and the like, the dark counting rate of the device is remarkably reduced, and the photon detection efficiency and the avalanche gain stability are improved. The prepared silicon photomultiplier comprises an optimally designed doped region and an Al2O3 / SiNx composite passivation layer, has excellent detection performance in a blue-violet light band, and can be widely applied to high-sensitivity detection fields such as biomedical imaging, nuclear radiation detection and laser radar.

An atomic layer deposition apparatus including an atomic layer deposition reactor and a reactor door. The reactor door is arranged against the end edge of the reactor in a closed position of the reactor. The apparatus having a cooling arrangement for cooling the reactor door having a shell structure surrounding the reactor from the outside of the reactor such that a cooling channel is formed between the shell structure and the at least one side wall of the reactor; a heat exchanger element arranged in the cooling channel in an area of the end edge; and a ventilation discharge connection in connection with the cooling channel provided at a distance from the edge end.

The invention relates to the technical field of photocatalytic materials, in particular to a multi-ion doped TiO2 nanosheet material suitable for degradation of dyes in water and a preparation method of the multi-ion doped TiO2 nanosheet material. The preparation method comprises the following steps: pre-embedding a self-sacrifice template in a germanium-tungsten composite doping solution, carrying out hydrothermal conversion to construct a Ge-W synergetic optimized regular TiO2 substrate, carrying out atomic layer deposition to realize nitrogen / silver uniform doping, and carrying out synergetic surface modification on silver nitrate-ethanolamine and perfluorosilane to prepare the TiO2 nanosheet material. Germanate serves as lattice strain guidance to guide TiO2 lattice growth to form a low-defect matrix, tungstate is cooperatively doped in the matrix to construct a strong built-in electric field to improve the charge separation efficiency, Ge-W elements cooperate to stabilize a bulk phase and a grain boundary, and a gradient protection barrier is constructed with selective shielding of a fluorosilane layer. The TiO2 catalyst is synergistically improved in the aspects of high catalytic activity and long-acting environmental stability, and is suitable for efficient pollutant purification in a complex water quality environment.

The application provides an Al2O3 skeleton electrode sheet containing LiAlO2 / LiNbO3 double-coated layers and a sulfide solid-state lithium battery composite electrode, and belongs to the technical field of sulfide solid-state lithium batteries. + The application adopts an atomic layer deposition process to construct double-layer functional coating on the Al2O3 skeleton, wherein the inner layer LiAlO2 serves as a chemical barrier layer and can inhibit the reaction of sulfides and Al2O3, and the outer layer LiNbO3 serves as an ion conductor layer and can reduce the Li diffusion energy barrier. The application solves the problems of chemical side reactions and too high lithium ion migration energy barrier of the electrode / skeleton material and electrolyte interface by decoupling the barrier-conduction function of the LiAlO2 and LiNbO3 double-coated layers, taking the thermodynamic stable phase (LiAlO2) as an interface sacrificial layer, and utilizing the topological ion transport characteristics of the niobium-oxygen octahedral channel, so that the unity of interface chemical stability and ion conductivity is realized in sub-nanometer scale.

The invention discloses a preparation method of a gas-phase porous silicon carbon negative electrode material. The preparation method comprises the following steps: (1) depositing silane gas and carbon source gas in porous carbon through a fluidized bed / rotary kiln equipment vapor deposition process to form a CVD (Chemical Vapor Deposition) porous silicon carbon material; (2) carrying out low-temperature ozone pretreatment on the obtained CVD silicon carbon material; and (3) carrying out ALD atomic layer deposition on the CVD silicon-carbon material subjected to ozone pretreatment to form a nano-scale metal oxide coating layer on the surface of the material. Wherein the ozone treatment process method and the ALD technology are suitable for optimizing artificial coating layers of various CVD gas-phase silicon carbon materials with various initial surface carbon layers, can realize a batch, uniform and stable modification effect, and have stable and positive effects in the aspects of initial capacity, first effect and volume expansion inhibition of the materials. The method has a remarkable CVD silicon carbon secondary coating effect, is suitable for batch preparation of materials, can achieve a remarkable material electrochemical performance optimization effect, and is simple, convenient and efficient.

A coating system for a turbine engine component is disclosed. The coating system includes a substrate, an optional bond coat, a synthetic oxide layer and a top coat. The synthetic oxide layer is formed by atomic layer deposition and includes two or more oxides.

The invention discloses a polyimide-aluminum oxide composite film material and a preparation method thereof, the composite film material is composed of a polyimide layer and an aluminum oxide layer deposited and combined on the upper surface of the polyimide layer, and the thickness of the polyimide layer and the thickness of the aluminum oxide layer are both nanoscale; the composite film material is prepared by using atomic layer deposition equipment, and the preparation method comprises the following steps: firstly, depositing a nanoscale polyimide layer on a monocrystalline silicon piece carrier according to a set program by taking pyromellitic dianhydride and hexamethylenediamine as precursor raw materials; and depositing and combining a nanoscale aluminum oxide layer on the upper surface of the polyimide layer according to a set program by taking trimethylaluminum and distilled water as precursor raw materials. The prepared composite film material is different from a current composite film material prepared by blending polyimide and aluminum oxide and then carrying out film casting, the composite film material has a nano-scale polyimide layer with uniform thickness and a nano-scale aluminum oxide layer deposited and combined on the upper surface of the polyimide layer, and the composite film material has a good radiation refrigeration effect.

This invention discloses an intelligent control system for a space-type atomic layer deposition equipment, belonging to the field of intelligent control technology. The system of this invention includes: an acquisition module that acquires the pressure difference and flow rate values ​​of the gas curtain pipeline and performs low-pass filtering to obtain a pure signal matrix; a feature extraction module that calculates the flow field impedance and impedance residual based on this matrix and converts them into an empirical probability distribution vector; a model building module that constructs a degenerate distribution uncertainty set and a scheduling objective cost function based on this vector, and converts them into a mixed integer second-order cone programming model; an offline solution module that discretizes and classifies the dynamic distribution divergence tolerance and solves the model, and pre-generates a scheduling strategy library; and an online control module that looks up tables in the strategy library according to the real-time divergence tolerance and outputs substrate transmission speed control and channel switching commands. This invention transforms the minimization-maximization probability model into a convex optimization problem for offline solution, breaking the computing power bottleneck and balancing control response speed and scheduling decision-making through efficient table lookup.

A group of inventions relates to the field of medical devices. A method for producing needles with adsorption properties is described by depositing an iron oxide coating onto the needle by atomic layer deposition. An acupuncture needle for reflex therapy, consisting of a handle and shaft made of metal material, is placed in a reactor where a vacuum is created at a pressure of approximately 10 mbar ± 0.1 mbar and a temperature of 150 ± 0.2 °C, then a ferrocenecarboxylic acid precursor in the form of vapor is delivered to the reactor, then nitrogen is added to the reactor and degassed to the initial pressure, and this process is repeated in pulse mode until a specific coating thickness is formed. The use of ferrocenecarboxylic acid as a precursor for producing an Fe3O4 coating is described. An acupuncture needle for adsorbing toxic heavy metal ions is described with a coating of Fe3O4 nanofilm thickness of 14 nm ± 0.1 nm, and the nanofilm has the appearance of a nanosieve as shown in Figure 1b. The use of acupuncture needles for adsorbing metal ions is described. The technical achievement of this invention is the development of a method for attaching a magnetic separation film of Fe3O4 to the surface of an acupuncture needle, which is simpler and less expensive in terms of methodology and technique, thereby imparting adsorption properties to the acupuncture needle. The needle of this invention makes it possible to adsorb toxic heavy metal ions such as cadmium, arsenic, manganese, cesium, aluminum, iron, cobalt, nickel, chromium, mercury, lead, copper, zinc, beryllium, antimony, thallium, bismuth, osmium, tin, molybdenum, zirconium, titanium, vanadium, molybdenum, and gallium.

The present invention relates to a reactor and a method for depositing one or more atomic layers of at least one material onto a substrate. The reactor includes a reaction chamber containing a showerhead, a submount, and at least one base support. The showerhead includes at least one gas outlet configured to provide a gas flow of at least one material or a gas flow of at least one component of the at least one material. The abutment is rotatable about an abutment axis of rotation. At least one substrate support is disposed on the submount and configured to rotate the substrate about a substrate axis of rotation. In particular, the substrate holder is configured to rotate the substrate about a substrate axis of rotation, where the abutment axis of rotation and the substrate axis of rotation are inclined relative to each other. The invention also relates to an X-ray microscope for generating an enlarged image of an object using X-rays.

A method of forming a film on a surface of a substrate in an internal volume of a reactor is provided. The method includes: dosing the surface of the substrate with a scandium precursor; purging the scandium precursor from the internal volume of the reactor; dosing the surface of the substrate with a co-reactant; and purging the co-reactant from the internal volume of the reactor.

The present invention relates to a novel silicon precursor compound capable of preparing an excellent silicon-containing thin film, a method for preparing the same, and a method for preparing a silicon-containing thin film using the same. The silicon precursor compounds of the present invention exhibit volatility sufficient for application in all atomic layer deposition (ALD) and chemical vapor deposition (CVD) to make silicon-containing films. In particular, deposition is possible even at a high deposition rate at a high temperature, so that a silicon-containing thin film having excellent quality can be prepared.

Systems and methods for forming an antimony containing film on a substrate. Related structures and films are also disclosed. The antimony films are be formed by a plasma enhanced atomic layer deposition process. The antimony films can be utilized as underlayers in EUV lithography processes.