2195 results about "Atomic layer deposition" patented technology

Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

The invention belongs to the technical field of battery materials, and particularly relates to a method for preparing a porous carbon structure containing a sub-nanoscale ionic conduction improvement layer by utilizing atomic layer deposition and application. The invention discloses a porous carbon-silicon negative electrode structure, which is characterized in that a sub-nano-scale ion conduction improvement layer is added between a porous carbon substrate and silicon particles, and the sub-nano-scale ion conduction improvement layer comprises silicon carbide, aluminum phosphide, aluminum nitride, aluminum oxide, lithium phosphate, aluminum phosphate and lithium aluminum phosphate. Meanwhile, the invention also discloses a preparation method of the porous carbon-silicon negative electrode structure, namely, a sub-nano-scale ion conduction improvement layer is deposited on the porous carbon substrate through an atomic layer deposition method, so that the binding force between the sub-nano-scale ion conduction improvement layer and silicon particles and an ion transport channel are increased, and the ion conduction of a vapor deposition silicon-carbon negative electrode material is improved; the polarization of the material is effectively reduced, so that the rate capability of the battery is improved, and the cycling stability of the porous carbon structure battery is improved.

Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

Metallization schemes involve atomic layer deposition (ALD) of molybdenum (Mo) and in some embodiments, ALD of Mo in a feature without a barrier layer. In some embodiments, deposition of the ALD Mo film may be followed by chemical vapor deposition (CVD) or physical vapor deposition (PVD) of a Mo film. In some embodiments, the CVD or PVD Mo film is part of the metallization stack. In other embodiments, the CVD or PVD Mo film is deposited as a sacrificial overburden layer. In some embodiments, deposition of the ALD Mo film may be followed by CVD or PVD of another metal such as tungsten (W). In some embodiments, the CVD or PVD W film is part of the metallization stack. In other embodiments, the CVD or PVD W film is deposited as a sacrificial overburden layer.

The invention is suitable for the field of atomic layer deposition, and discloses an atomic layer deposition process management method and system based on digital twinning, and the method comprises the steps: building a digital twinning model of an atomic layer deposition production system based on a multi-scale physical information neural network model; acquiring real-time reaction chamber process parameters and real-time state variables, and inputting the real-time reaction chamber process parameters and the real-time state variables into the digital twin model to obtain physical field distribution in the reaction chamber and a predicted growth state of a film on the surface of the substrate; based on the physical field distribution in the reaction cavity and the substrate surface film prediction growth state, decision analysis is carried out through a pre-trained reinforcement learning agent, and correction parameters used for optimizing the film growth quality are obtained; and generating a correction instruction based on the correction parameter, and updating the process parameter of the reaction cavity based on the correction instruction, so that the film on the surface of the substrate in the reaction cavity reaches the target film thickness and uniformity, and thus real-time intelligent closed-loop control of perception-prediction-decision-execution can be formed.

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.

The invention discloses a half-piece solar cell passivation method, which comprises the following steps that a plurality of half-piece solar cells are placed in a cavity of atomic layer deposition equipment, cutting surfaces of the plurality of half-piece solar cells are exposed, other surfaces are not exposed, and the cutting surfaces of the half-piece solar cells are parallel or in the same plane; the cutting surface is parallel to the direction of airflow arranged in the cavity; the cavity is heated to a preset reaction temperature, an aluminum source and an oxygen source are alternately introduced into the cavity in a pulse mode, an aluminum oxide film is deposited on the cutting faces of the multiple half solar cells so as to achieve passivation, the aluminum source comprises trimethyl aluminum steam, the oxygen source comprises ozone or water vapor, and the airflow inflow direction of the aluminum source and the oxygen source is parallel to the cutting faces; and annealing and cooling the plurality of half-piece solar cells to obtain the passivated half-piece solar cells. According to the method, the passivation uniformity can be improved, the passivation rate is increased, and the passivation duration, raw material consumption and cost are reduced.

Methods and apparatuses for depositing silicon nitride in various applications are provided. Embodiments include depositing silicon nitride directly on silicon or silicon oxide surfaces using modulated dose to conversion time ratios in thermal atomic layer deposition. Embodiments include exposing a silicon oxide surface to a nitrogen-containing plasma treatment prior to depositing any silicon nitride and depositing silicon nitride by thermal atomic layer deposition.

The invention discloses a method for coating fluorescent powder with aluminum oxide through plasma-assisted atomic layer deposition, which comprises the following steps of: building an atomic layer deposition system, and placing a base station in a vacuum chamber of the atomic layer deposition system; fluorescent powder is placed on a base station, a vibration motor is turned on, and then the fluorescent powder is pretreated, including degassing treatment and oxygen plasma pretreatment; sequentially and alternately introducing two precursors into a vacuum chamber of the atomic layer deposition system, so that the two precursors are chemically adsorbed on the surface of the fluorescent powder and react to generate an aluminum oxide film; and after each precursor is introduced and reacts, the vacuum chamber needs to be cleaned by inert gas. According to the method, high-precision monoatomic-layer-level film control is achieved through the plasma-assisted atomic layer deposition technology, the defect that powder is prone to agglomeration in deposition is overcome through the vibration type fluidized bed technology, and therefore a high-quality aluminum oxide protection layer can be formed on the surface of the fluorescent powder; the water resistance and the luminescence property of the fluorescent powder are obviously improved.

The invention discloses a high-weather-resistance bismuth vanadate coating and a preparation method thereof, and belongs to the technical field of inorganic pigment modification. The high-weather-resistance bismuth vanadate coating comprises bismuth vanadate matrix particles, and the surfaces of the bismuth vanadate matrix particles are sequentially coated with an amorphous aluminum oxide layer, a cerium oxide layer and a fluorinated silicon oxide layer. The amorphous aluminum oxide layer is formed in an atomic layer deposition mode; the cerium oxide layer is formed by hydrothermal treatment of a cerium source. The preparation technology has accurate and controllable technological parameters, is suitable for industrial production, can replace the traditional toxic pigment containing lead and cadmium, and meets the requirements of environmental regulations. The bismuth vanadate coating has excellent weather resistance and chemical stability, the service life of a product can be prolonged, the maintenance cost is reduced, and a reliable solution is provided for development of high-performance environment-friendly pigments.

The invention relates to a focused ion beam ultrathin section sample preparation pretreatment method for a wafer sample, and belongs to the technical field of wafer material microscopic experiments. The wafer sample preparation pretreatment method provided by the invention comprises the following steps: (1) depositing a metal oxide on the surface of a wafer sample by adopting an atomic layer deposition technology to obtain an ALD layer; (2) coating a curing glue solution on the surface of the ALD layer, and curing to obtain a curing glue layer; and (3) plating a conductive protection layer on the surface of the cured adhesive layer to finish sample preparation pretreatment. The sample preparation pretreatment method disclosed by the invention can well solve the problems of irradiation damage and deformation of a fine structure which is not resistant to electron beam irradiation, curtain effect in a cutting process, unobvious structural boundary in a shooting process and the like in focused ion beam ultrathin section sample preparation, and has good application prospects in the technical field of wafer material microscopic experiments. And the practical value is very high.

The invention provides a TEM sample and a preparation method and application thereof.According to the preparation method of the TEM sample, on the premise that the hole structure of a semiconductor device is not affected, part of residual polymer accumulated and blocked in a hole opening in the semiconductor device is removed through reactive ion etching, so that the hole opening is expanded and not blocked any more; a protective colloid can enter a pore structure for filling and precursor material plating of atomic layer deposition is facilitated, the definition of the side wall of the pore is enhanced, and the quality and the final observation effect of the TEM sample are effectively improved; the equipment and technology adopted by the preparation method of the TEM sample provided by the invention are low in investment, and the operation process is simpler and faster than that of a Fab etching process; meanwhile, batch laboratory-scale sample treatment can also be realized; in addition, compared with a wet chemical corrosion cleaning technology for removing residual polymers, the problems of chemical reagent residues, chemical reactant pollution and the like at the bottom of the deep hole structure are avoided.

A method of depositing at least one fluoride layer comprises: depositing the fluoride layer on a substrate by photoassisted atomic layer deposition, ALD, in a plurality of ALD cycles. The method comprises irradiating the fluoride layer with UV / VIS light at least in some of the plurality of ALD cycles, such as in all ALD cycles, to anneal at least one potential crystal defect in the fluoride layer. The methods can be performed using an apparatus for atomic layer deposition of at least one fluoride layer, thereby producing an optical element comprising a substrate coated with such a fluoride layer, which can be used in an optical arrangement comprising at least one such optical element.

The invention discloses a composite modified material for a lithium niobate wafer, and relates to the technical field of nano materials. The material is composed of an anti-corrosion passivation matrix and a function enhancement component, wherein the anti-corrosion matrix adopts a silicon nitride / SiO2 multi-layer composite layer, atomic layer deposition titanium dioxide and magnetron sputtering aluminum oxide to form cascade protection; the functional layer comprises lead sulfide nanoparticles and nano silicon dioxide, and is directionally modified by a silane coupling agent and a perfluoropolyether surfactant. During preparation, PbS nano-particles are synthesized by combining a PECVD-ALD-magnetron sputtering stepped deposition process (200-150 DEG C) with a solvothermal method, and finally, the PbS nano-particles are formed through spin coating-annealing (300-400 DEG C). The optical loss of the material under the wavelength of 1550 nm is smaller than 0.2 dB / cm, the acid and alkali corrosion resistance is larger than 240 h, the lead dissolution rate is smaller than 0.1 ppm, the interface state density is reduced by 2 orders of magnitude, the contradiction between lithium niobate wafer surface degradation, photoelectric property degradation and lead-containing material environment risk is solved, and the material is suitable for 5G optical waveguide and quantum integrated device packaging.

The invention belongs to the technical field of semiconductor manufacturing, and discloses a process chamber and atomic layer deposition equipment. The process chamber comprises a chamber body and a spray header, the chamber body is provided with a reaction cavity and an exhaust passage communicated with the reaction cavity, the spray header is arranged in the reaction cavity and is provided with an air inlet, a spray cavity and a plurality of spray holes, the air inlet is communicated with the spray cavity, the spray cavity is communicated with the reaction cavity through the spray holes, a guide plate is arranged in the spray cavity, and the guide plate is communicated with the reaction cavity through the spray holes. The guide plate is positioned between the air inlet and the plurality of spraying holes, and is used for dispersing and guiding air introduced from the air inlet to the plurality of spraying holes; the atomic layer deposition equipment comprises the process chamber and further comprises a preheating chamber, a cooling chamber and a conveying device, and the preheating chamber, the process chamber and the cooling chamber are sequentially arranged in the conveying direction of the conveying device. According to the process chamber, the uniformity of precursor gas injection is effectively improved, the thickness consistency of an atomic layer film on a substrate is improved, and the generation effect of the atomic layer film is ensured.

The invention discloses an ultra-steep sub-threshold slope transistor and a preparation method thereof, and belongs to the technical field of integrated circuits. An ultra-steep sub-threshold slope transistor is realized by using a superlattice stacked high-kappa gate dielectric, the superlattice stacked high-kappa gate dielectric comprises a plurality of HfO2 / ZrO2 / HfO2 stacking units which are stacked together, and an insertion layer is arranged between every two adjacent stacking units. Growing the superlattice stacked high-kappa gate dielectric by adopting an atomic layer deposition method, performing annealing treatment, and adjusting the gate dielectric interface, the electric leakage characteristic and the proportion of a ferroelectric quadrature phase to an antiferroelectric tetragonal phase by adjusting the type of an insertion layer and / or adjusting an oxygen source and pulse time thereof during growth, so as to obtain the superlattice stacked high-kappa gate dielectric. An ultra-steep sub-threshold slope transistor with a high on-off ratio is achieved. Compared with a traditional transistor, the transistor provided by the invention has higher on-state current, lower sub-threshold swing and smaller electric leakage.

The invention provides a spatial ALD (atomic layer deposition) coating device, a coating method and a composite film. According to the spatial ALD coating device, a coating cavity comprises at least one group of reaction areas which are connected in sequence, and the adjacent reaction areas are isolated through air curtains; each group of reaction areas consists of a precursor reaction area and a co-reactant reaction area which are separated by an air curtain; the gas inlet assembly comprises a precursor source gas inlet piece, a co-reactant source gas inlet piece and a gas curtain supply piece; the precursor source gas inlet piece comprises a precursor source gas supply device and a precursor source gas transmission device; the co-reactant source gas inlet piece comprises a co-reactant source gas supply device and a co-reactant source gas transmission device; the air curtain supply part comprises an air curtain air supply device and an air curtain air conveying device; and the substrate to be coated is driven by the conveying mechanism to sequentially pass through each group of reaction areas. According to the spatial ALD coating device, the preparation of a composite film with any material ratio can be realized according to requirements, the production efficiency is improved, and the application range is widened.

The invention belongs to the field of lithium ion battery materials, and discloses a chloride coated modified positive electrode material, which comprises a positive electrode material matrix and a chloride LiaMClb coated on the surface of the positive electrode material matrix, M is selected from at least one of Ti, Cr, Mn, Fe, Co and Cu, 1 < = a < = 4, 2 < = b < = 6. According to the preparation method, the chloride LiaMClb is deposited on the surface of the positive electrode material substrate in an atomic layer deposition mode. The invention also discloses a sulfide all-solid-state lithium ion battery which comprises the chloride coated modified positive electrode material. The LiaMClb is selected to coat the modified positive electrode material, the LiaMClb and the positive electrode material show good interface compatibility, and the good oxidation resistance of chloride ions can effectively inhibit the decomposition side reaction of the chloride ions and the positive electrode material in the lithium removal process.

The invention belongs to the technical field of supercapacitor materials, and particularly relates to a coal-based porous carbon material and a preparation method and application thereof. In order to solve the problems of safety, batch stability and easy formation of a pore structure in a process for preparing porous carbon from coal, the method comprises the following steps: firstly, carrying out mixing and kneading treatment on fine-particle raw material coal and a liquid-phase doping agent, and then carrying out drying-low-carbon integrated treatment on the mixture; then activating the low-carbon material at a high temperature by means of water vapor, and then performing refined pore-forming on the cavity structure at a high temperature by means of carbon dioxide gas; after the activation reaction is finished, carrying out impurity removal treatment on the activated material with the high specific surface area by virtue of an acid-base solution; and depositing a layer of organic polymer on the surface of the purified material by adopting an atomic layer deposition technology, and forming a passivation layer on the polymer layer by virtue of high-temperature treatment, thereby obtaining the coal-based porous carbon material with stable performance and structure, and further applying the coal-based porous carbon material to the negative pole piece of the supercapacitor.

The invention belongs to the technical field of crystalline silicon solar cell edge passivation films, and particularly relates to an aluminum oxide and silicon nitride laminated passivation film, a preparation method thereof and a crystalline silicon cell, and the method comprises the following steps: S1, cutting and stacking a cell piece, and enabling the cutting surfaces of the cell pieces to be in the same plane; s2, carrying out vacuum preheating treatment on the battery slices; s3, sequentially introducing carrier gas carrying TMAl molecules and plasma oxidized water vapor, and after purging is completed, carrying out a plate-type atomic layer deposition reaction on the preheated battery slices to prepare an Al2O3 layer; wherein the deposition reaction temperature is 170-310 DEG C, and the deposition pressure is 1-50 Pa; s4, carrying out PECVD deposition reaction on the battery slice with the Al2O3 layer deposited on the cutting surface to prepare a silicon nitride layer; wherein the deposition reaction temperature ranges from 100 DEG C to 350 DEG C, and the deposition pressure ranges from 1 Pa to 100 Pa; and step S5, cooling the battery piece to obtain the battery piece with the aluminum oxide and silicon nitride laminated passivation film.

The invention discloses atomic layer deposition equipment and a deposition method, and the atomic layer deposition equipment comprises a reaction cavity; the first end of the main gas inlet pipeline is communicated with a reaction gas source, and the second end of the main gas inlet pipeline is communicated with the reaction cavity; the first end of the pressure control pipeline communicates with the main air inlet pipeline, and the second end communicates with the air pump; the first end of the inert gas pipeline is communicated with an inert gas source, and the second end is communicated with the reaction cavity; the first end of the exhaust pipeline is communicated with the reaction cavity, and the second end is communicated with the air pump. When the atomic layer deposition equipment introduces the reaction gas into the main gas inlet pipeline, the pressure in the pressure control pipeline is controlled to be greater than the pressure in the reaction cavity, so that the pressure of the reaction gas in the main gas inlet pipeline is rapidly increased in a short time, and the reaction gas is pressed into the reaction cavity and adsorbed on a substrate.

Atomic layer deposition (ALD) of dielectric material in gaps that facilitates void-free bottom-up gap fill can involve flowing a reaction inhibitor during the ALD process. In some embodiments, the reaction inhibitor is flowed during at least part of a plasma operation of a plasma-enhanced ALD (PEALD) process.

The invention discloses a TOPCon battery front film layer with anti-UV attenuation effect and a preparation method thereof, belonging to the technical field of battery preparation. The invention adopts atomic layer deposition technology (ALD) and H2O as a precursor source to react in two stages to obtain a laminated aluminum oxide film layer with decreasing OH group content; then a silicon oxynitride film is added on the front laminated aluminum oxide film layer, and then a passivation film layer such as silicon nitride and silicon oxynitride is grown; the laminated structure can greatly reduce the interface state density of aluminum oxide and protect the passivation film layer; at the same time, the silicon oxynitride film layer and the heating process are added, so as to improve the film layer's blocking ability to H ions after UV irradiation, promote the crystallization of the aluminum oxide film layer, increase its effective thickness, and further improve its chemical passivation and field passivation effects, thereby reducing the UV attenuation effect of the TOPCon battery, improving the reliability measures of anti-UV attenuation, and compensating for the high efficiency loss of a single process of increasing the ALD reaction cycle.

Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: mixing a vapor stream of an organometallic precursor with a vapor stream of a counter-reactant so as to form a polymerized organometallic material; and depositing the organometallic polymer-like material onto the surface of the semiconductor substrate. The mixing and depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

The invention provides atomic layer deposition equipment. The atomic layer deposition equipment comprises a deposition chamber; an inert gas source configured to supply an inert gas having an initial pressure greater than an atmospheric pressure; a heater configured to heat the inert gas from the inert gas source and having the initial gas pressure, where the heated inert gas is delivered to the deposition chamber to heat the deposition chamber; and a bypass line fluidly connected to the deposition chamber and configured to direct the inert gas within the deposition chamber out of the deposition chamber. Through the supply of the pressurized gas, the heating time of the deposition chamber can be shortened, and the productivity of the atomic layer deposition equipment is effectively improved.

Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and / or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable / uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

The invention provides a Pt-Sn bimetallic catalyst and a preparation method and application thereof.The preparation method comprises the steps that 1, a Y molecular sieve is placed in a mixed solution of KOH and methyl alcohol, centrifugation and washing are conducted till the Y molecular sieve is neutral after stirring, drying and roasting are conducted, and a non-acid KY molecular sieve is obtained; the silica-alumina ratio of the Y molecular sieve is 3-100; 2) taking the non-acidic KY molecular sieve as a carrier, and loading Sn by adopting an atomic layer deposition technology to obtain a Sn-modified non-acidic KY molecular sieve; and 3) loading Pt by using the Sn-modified non-acidic KY molecular sieve as a carrier and adopting an atomic layer deposition technology to obtain the Pt-Sn bimetallic catalyst. According to the preparation method provided by the invention, spatial distribution of Pt and Sn is accurately regulated and controlled by combining an atomic layer deposition technology, so that the electronic state of Pt species is adjusted, alkane is promoted to be dehydrogenated into an olefin intermediate, and the aromatization catalytic activity and the aromatic hydrocarbon selectivity of alkane are improved.

The invention discloses a preparation method of a perovskite battery and the perovskite battery, and the preparation method of the perovskite battery comprises the steps: providing a substrate which is provided with a first surface; a metal oxide layer is formed on the first surface through an atomic layer deposition technology, and raw materials of the atomic layer deposition technology comprise an organic metal source and a water source; preparing a self-assembled molecular layer on the metal oxide layer by adopting a spraying process; and forming a perovskite active layer, an electron transport layer and a first conductive layer which are arranged in a laminated manner on one side, away from the substrate, of the self-assembled molecular layer. The problem that the compactness of a subsequent self-assembled film layer is reduced due to the process for preparing a metal oxide film layer in the prior art is solved.

The present invention relates generally to the field of polymer dispersion coated, paper-based flexible packaging materials. In particular, the present invention relates to improving the barrier properties of polymer dispersion coated 5 paper-based flexible packaging materials. Embodiments of the present invention relate to a process for improving the barrier properties of polymer dispersion coated paper-based flexible packaging materials comprising the step of applying an Al2O3 coating to at least one surface of the dispersion coated paper-based flexible packaging materials, for example by using atomic layer deposition; and an Al2O3-coated paper material 10 obtainable by such a process.