1820 results about "Atomic layer deposition" patented technology

Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

The invention is suitable for the field of atomic layer deposition, and discloses an atomic layer deposition process management method and system based on digital twinning, and the method comprises the steps: building a digital twinning model of an atomic layer deposition production system based on a multi-scale physical information neural network model; acquiring real-time reaction chamber process parameters and real-time state variables, and inputting the real-time reaction chamber process parameters and the real-time state variables into the digital twin model to obtain physical field distribution in the reaction chamber and a predicted growth state of a film on the surface of the substrate; based on the physical field distribution in the reaction cavity and the substrate surface film prediction growth state, decision analysis is carried out through a pre-trained reinforcement learning agent, and correction parameters used for optimizing the film growth quality are obtained; and generating a correction instruction based on the correction parameter, and updating the process parameter of the reaction cavity based on the correction instruction, so that the film on the surface of the substrate in the reaction cavity reaches the target film thickness and uniformity, and thus real-time intelligent closed-loop control of perception-prediction-decision-execution can be formed.

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.

The invention discloses a high-weather-resistance bismuth vanadate coating and a preparation method thereof, and belongs to the technical field of inorganic pigment modification. The high-weather-resistance bismuth vanadate coating comprises bismuth vanadate matrix particles, and the surfaces of the bismuth vanadate matrix particles are sequentially coated with an amorphous aluminum oxide layer, a cerium oxide layer and a fluorinated silicon oxide layer. The amorphous aluminum oxide layer is formed in an atomic layer deposition mode; the cerium oxide layer is formed by hydrothermal treatment of a cerium source. The preparation technology has accurate and controllable technological parameters, is suitable for industrial production, can replace the traditional toxic pigment containing lead and cadmium, and meets the requirements of environmental regulations. The bismuth vanadate coating has excellent weather resistance and chemical stability, the service life of a product can be prolonged, the maintenance cost is reduced, and a reliable solution is provided for development of high-performance environment-friendly pigments.

The invention provides a TEM sample and a preparation method and application thereof.According to the preparation method of the TEM sample, on the premise that the hole structure of a semiconductor device is not affected, part of residual polymer accumulated and blocked in a hole opening in the semiconductor device is removed through reactive ion etching, so that the hole opening is expanded and not blocked any more; a protective colloid can enter a pore structure for filling and precursor material plating of atomic layer deposition is facilitated, the definition of the side wall of the pore is enhanced, and the quality and the final observation effect of the TEM sample are effectively improved; the equipment and technology adopted by the preparation method of the TEM sample provided by the invention are low in investment, and the operation process is simpler and faster than that of a Fab etching process; meanwhile, batch laboratory-scale sample treatment can also be realized; in addition, compared with a wet chemical corrosion cleaning technology for removing residual polymers, the problems of chemical reagent residues, chemical reactant pollution and the like at the bottom of the deep hole structure are avoided.

A method of depositing at least one fluoride layer comprises: depositing the fluoride layer on a substrate by photoassisted atomic layer deposition, ALD, in a plurality of ALD cycles. The method comprises irradiating the fluoride layer with UV / VIS light at least in some of the plurality of ALD cycles, such as in all ALD cycles, to anneal at least one potential crystal defect in the fluoride layer. The methods can be performed using an apparatus for atomic layer deposition of at least one fluoride layer, thereby producing an optical element comprising a substrate coated with such a fluoride layer, which can be used in an optical arrangement comprising at least one such optical element.

The invention discloses a composite modified material for a lithium niobate wafer, and relates to the technical field of nano materials. The material is composed of an anti-corrosion passivation matrix and a function enhancement component, wherein the anti-corrosion matrix adopts a silicon nitride / SiO2 multi-layer composite layer, atomic layer deposition titanium dioxide and magnetron sputtering aluminum oxide to form cascade protection; the functional layer comprises lead sulfide nanoparticles and nano silicon dioxide, and is directionally modified by a silane coupling agent and a perfluoropolyether surfactant. During preparation, PbS nano-particles are synthesized by combining a PECVD-ALD-magnetron sputtering stepped deposition process (200-150 DEG C) with a solvothermal method, and finally, the PbS nano-particles are formed through spin coating-annealing (300-400 DEG C). The optical loss of the material under the wavelength of 1550 nm is smaller than 0.2 dB / cm, the acid and alkali corrosion resistance is larger than 240 h, the lead dissolution rate is smaller than 0.1 ppm, the interface state density is reduced by 2 orders of magnitude, the contradiction between lithium niobate wafer surface degradation, photoelectric property degradation and lead-containing material environment risk is solved, and the material is suitable for 5G optical waveguide and quantum integrated device packaging.

The invention belongs to the technical field of semiconductor manufacturing, and discloses a process chamber and atomic layer deposition equipment. The process chamber comprises a chamber body and a spray header, the chamber body is provided with a reaction cavity and an exhaust passage communicated with the reaction cavity, the spray header is arranged in the reaction cavity and is provided with an air inlet, a spray cavity and a plurality of spray holes, the air inlet is communicated with the spray cavity, the spray cavity is communicated with the reaction cavity through the spray holes, a guide plate is arranged in the spray cavity, and the guide plate is communicated with the reaction cavity through the spray holes. The guide plate is positioned between the air inlet and the plurality of spraying holes, and is used for dispersing and guiding air introduced from the air inlet to the plurality of spraying holes; the atomic layer deposition equipment comprises the process chamber and further comprises a preheating chamber, a cooling chamber and a conveying device, and the preheating chamber, the process chamber and the cooling chamber are sequentially arranged in the conveying direction of the conveying device. According to the process chamber, the uniformity of precursor gas injection is effectively improved, the thickness consistency of an atomic layer film on a substrate is improved, and the generation effect of the atomic layer film is ensured.

The invention belongs to the technical field of supercapacitor materials, and particularly relates to a coal-based porous carbon material and a preparation method and application thereof. In order to solve the problems of safety, batch stability and easy formation of a pore structure in a process for preparing porous carbon from coal, the method comprises the following steps: firstly, carrying out mixing and kneading treatment on fine-particle raw material coal and a liquid-phase doping agent, and then carrying out drying-low-carbon integrated treatment on the mixture; then activating the low-carbon material at a high temperature by means of water vapor, and then performing refined pore-forming on the cavity structure at a high temperature by means of carbon dioxide gas; after the activation reaction is finished, carrying out impurity removal treatment on the activated material with the high specific surface area by virtue of an acid-base solution; and depositing a layer of organic polymer on the surface of the purified material by adopting an atomic layer deposition technology, and forming a passivation layer on the polymer layer by virtue of high-temperature treatment, thereby obtaining the coal-based porous carbon material with stable performance and structure, and further applying the coal-based porous carbon material to the negative pole piece of the supercapacitor.

The invention belongs to the technical field of crystalline silicon solar cell edge passivation films, and particularly relates to an aluminum oxide and silicon nitride laminated passivation film, a preparation method thereof and a crystalline silicon cell, and the method comprises the following steps: S1, cutting and stacking a cell piece, and enabling the cutting surfaces of the cell pieces to be in the same plane; s2, carrying out vacuum preheating treatment on the battery slices; s3, sequentially introducing carrier gas carrying TMAl molecules and plasma oxidized water vapor, and after purging is completed, carrying out a plate-type atomic layer deposition reaction on the preheated battery slices to prepare an Al2O3 layer; wherein the deposition reaction temperature is 170-310 DEG C, and the deposition pressure is 1-50 Pa; s4, carrying out PECVD deposition reaction on the battery slice with the Al2O3 layer deposited on the cutting surface to prepare a silicon nitride layer; wherein the deposition reaction temperature ranges from 100 DEG C to 350 DEG C, and the deposition pressure ranges from 1 Pa to 100 Pa; and step S5, cooling the battery piece to obtain the battery piece with the aluminum oxide and silicon nitride laminated passivation film.

The invention discloses atomic layer deposition equipment and a deposition method, and the atomic layer deposition equipment comprises a reaction cavity; the first end of the main gas inlet pipeline is communicated with a reaction gas source, and the second end of the main gas inlet pipeline is communicated with the reaction cavity; the first end of the pressure control pipeline communicates with the main air inlet pipeline, and the second end communicates with the air pump; the first end of the inert gas pipeline is communicated with an inert gas source, and the second end is communicated with the reaction cavity; the first end of the exhaust pipeline is communicated with the reaction cavity, and the second end is communicated with the air pump. When the atomic layer deposition equipment introduces the reaction gas into the main gas inlet pipeline, the pressure in the pressure control pipeline is controlled to be greater than the pressure in the reaction cavity, so that the pressure of the reaction gas in the main gas inlet pipeline is rapidly increased in a short time, and the reaction gas is pressed into the reaction cavity and adsorbed on a substrate.

Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: mixing a vapor stream of an organometallic precursor with a vapor stream of a counter-reactant so as to form a polymerized organometallic material; and depositing the organometallic polymer-like material onto the surface of the semiconductor substrate. The mixing and depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

The invention provides a Pt-Sn bimetallic catalyst and a preparation method and application thereof.The preparation method comprises the steps that 1, a Y molecular sieve is placed in a mixed solution of KOH and methyl alcohol, centrifugation and washing are conducted till the Y molecular sieve is neutral after stirring, drying and roasting are conducted, and a non-acid KY molecular sieve is obtained; the silica-alumina ratio of the Y molecular sieve is 3-100; 2) taking the non-acidic KY molecular sieve as a carrier, and loading Sn by adopting an atomic layer deposition technology to obtain a Sn-modified non-acidic KY molecular sieve; and 3) loading Pt by using the Sn-modified non-acidic KY molecular sieve as a carrier and adopting an atomic layer deposition technology to obtain the Pt-Sn bimetallic catalyst. According to the preparation method provided by the invention, spatial distribution of Pt and Sn is accurately regulated and controlled by combining an atomic layer deposition technology, so that the electronic state of Pt species is adjusted, alkane is promoted to be dehydrogenated into an olefin intermediate, and the aromatization catalytic activity and the aromatic hydrocarbon selectivity of alkane are improved.

The invention discloses a high-porosity organic salt framework confinement nano-metal hydrogen storage material and a preparation method thereof, and belongs to the field of new energy materials. The material takes a carboxylic acid organic salt framework (POS-1) as a carrier, the specific surface area of the material is 1520 m < 2 > / g, the pore size distribution is 1.8-2.5 nm, nano Mg / Ni particles (the average particle size is 3.2 + / -0.5 nm) are confined in pores through a gradient loading and in-situ reduction technology, and an atomic layer deposition (ALD) is adopted to modify a Pd nano catalyst (the loading capacity is 0.48 wt%). The reversible hydrogen storage capacity of the material at room temperature reaches 5.8 wt%, the hydrogen desorption temperature is lower than 80 DEG C, and the capacity retention ratio is larger than or equal to 92% after 100 times of circulation. The preparation method comprises the steps of organic salt framework synthesis, metal precursor gradient loading, low-temperature reduction (250 DEG C), hydrogenation activation and the like, the process is simple and controllable, and the catalyst is suitable for scenes such as a vehicle-mounted hydrogen storage system.

The invention discloses a gate dielectric film growth process, an HEMT (High Electron Mobility Transistor) device and a preparation method, and the gate dielectric film growth process comprises the steps: executing a primary process cycle of atomic layer deposition, and forming an amorphous gate dielectric film on the surface of a substrate; after the primary process circulation is completed, in-situ gas plasma treatment is executed, a single crystal gate dielectric film converted from the amorphous gate dielectric film after treatment is obtained, and when the single crystal gate dielectric film is formed between a metal gate and a barrier layer of the HEMT device, the interface state of the metal gate at a gate groove can be improved, the quality of a contact interface below gate metal is improved, and the performance of the HEMT device is improved. And the defect density and the electron trapping effect are reduced, so that the problems of serious influence on safe operation of the device and even grid degradation caused by grid leakage and threshold voltage drift after stress of the device can be effectively avoided, and the performance of the device is improved.

The invention relates to the field of material surface treatment, and discloses a silica gel and metal combined treatment process which comprises the following steps: S1, ultra-short pulse laser is adopted to machine a three-dimensional micro-nano composite structure on the surface of a titanium alloy, the structure comprises a periodic groove array and surface nano holes, and the surface roughness Ra of the titanium alloy is larger than or equal to 5 microns; and S2, a titanium nitride transition layer and a siloxane self-assembly molecular layer are sequentially formed on the roughened titanium alloy surface through atomic layer deposition, and a gradient chemical interface is formed. According to the method, the micro-nano composite structure is processed through ultra-short pulse laser, the interface mechanical embedding area is remarkably increased, the two-dimensional rough limitation of a traditional sand blasting process is broken through, deep barb-shaped anchoring is achieved, the anti-stripping capacity is greatly enhanced, gradient chemical bonding is formed by the atomic layer deposition titanium nitride transition layer and the amino self-assembly molecular layer, and the anti-stripping performance is improved. The thermal expansion difference is effectively buffered, and the interface high-temperature resistance is improved.

A component for use in a semiconductor processing chamber is provided. A metal or metal alloy component body has a process-facing surface. An intermediate aluminum oxide coating is disposed on the process-facing surface, the intermediate aluminum oxide coating being at least 99% pure by weight and having a porosity of less than 0.1% by volume, the intermediate aluminum oxide coating having a first thickness. A process-exposed layer is disposed on the intermediate aluminum oxide coating, the process-exposed layer comprising at least one of yttrium, hafnium, zirconium, lanthanum, magnesium, and a lanthanide, the process-exposed layer being at least 99% pure by weight, having a porosity of less than 0.1%, and having a second thickness, the second thickness being less than or equal to the first thickness.

Methods of depositing silicon-containing layers in the formation of semiconductor devices are described. The methods include a thermal chemical vapor deposition (CVD) process or a thermal atomic layer deposition (ALD) process without the use of plasma. Some methods include exposing a semiconductor substrate to a silicon-containing precursor, an oxygen-containing reactant, and an initiator compound to deposit a silicon oxide layer. Some methods include exposing a semiconductor substrate to a silicon-containing precursor, a nitrogen-containing reactant, and an initiator compound to deposit a silicon nitride layer. Some methods include exposing a semiconductor substrate to a silicon-containing precursor, an oxygen-containing reactant, a nitrogen-containing reactant, and an initiator compound to deposit a silicon oxynitride layer.

A process for forming a vapor-deposited ZIF-8 metal organic framework includes: conducting a gas surface reaction between an ALD-deposited ZnO and 2-methylimidazole to form a vapor-deposited ZIF-8 metal organic framework, wherein the gas surface reaction is conducted at a temperature greater than 140 C, and wherein the gas surface reaction is conducted at a pressure of less than 1000 mTorr. In a particular embodiment, the gas surface reaction is conducted at a temperature of 160 C. A process for preparing a laminate includes: performing ALD of zinc oxide as a base between 1 nm to 10 nm in thickness, exposing 2-methylimidazole vapor phase linker at chemical vapor deposition at a temperature range of greater than 140 C to less than or equal to 180 C in a vacuum condition, and cycling of the ZnO ALD and 2-methylimidazole exposure to deposit a film or fill a gap.

The invention discloses an atomic layer deposition silicon-carbon composite material, a preparation method and application thereof, a core-shell coating structure composed of an inner core and an outer shell is adopted, the inner core is a multi-element doped silicon-carbon material, and the outer shell is a solid electrolyte composite layer; the mass ratio of the inner core to the shell is (80-95): (5-20); the solid electrolyte is deposited on the surface of the specific silicon carbon material through an atomic vapor deposition method, so that the expansion is reduced, and the cycle performance of the battery is improved.

The invention belongs to the field of thin films, and particularly discloses an atomic layer deposition method and a thin film prepared through the atomic layer deposition method. According to the deposition method, the reaction cavity, the two input pipeline systems, the outlet valve and the vacuum pump in the atomic layer deposition system are used for controlling precursor pulse deposition and inert gas purging conditions in the atomic deposition process, and the film deposition state is improved; the efficiency of purging and removing substances and impurity residues such as a precursor and a reaction product thereof is improved, the problem that the quality of a deposited film is affected by the impurity residues in a reaction system or on the surface of a sample in the film deposition process is avoided, the uniformity and compactness of film deposition and the coverage rate and conformal rate of a film on the surface of a base material hole are improved, the defects of the film are reduced, and the yield is improved. And the method can be applied to a substrate with a high aspect ratio structure to deposit the film, so that the purpose of manufacturing a large-size complicated special-shaped structure device is achieved.

The invention discloses an Internet of Things and AI energized smart energy multi-energy complementary heating control system, which relates to the technical field of smart energy heating control, and comprises an atomic layer deposition sensing module for realizing ultra-sensitive measurement of temperature and humidity; edge nodes are calculated through photons, and the data processing energy efficiency is improved; the shape memory alloy-piezoelectric composite execution module is used for accurate and rapid adjustment; the multi-scale heat coordination module is used for strengthening heat transmission; the magnetofluid sealing and regulating module is used for dynamically controlling the flow; the terahertz metasurface communication module guarantees high-speed communication, and the system optimizes energy complementation and intelligent regulation and control through multi-technology fusion. According to the invention, the sensing precision, the data processing speed and the execution precision are improved, the heat transmission efficiency is enhanced, the flow dynamic regulation and control and high-speed reliable communication are realized, the room temperature standard reaching rate is improved and the energy consumption is reduced through digital twin optimization control, and an efficient low-carbon scheme is provided for smart energy heating.

The invention relates to a p-type niobium oxide dipole-based metal-oxide-semiconductor device and a manufacturing method thereof, and belongs to the technical field of semiconductor device manufacturing. According to the technical scheme, the MOS device is provided. A gate dielectric stack of the MOS device sequentially comprises an interface layer, a high-k dielectric layer and a p-type electric dipole layer containing niobium oxide from bottom to top. According to the preparation method, the dipole layer is deposited by adopting an atomic layer deposition process, and then atoms in the dipole layer are driven to be diffused to the interface of the high-k dielectric layer and the interface layer through high-temperature rapid annealing treatment so as to form effective electric dipoles. Compared with the prior art, the high dielectric constant characteristic is utilized, the threshold voltage can be positively regulated and controlled to a larger extent, meanwhile, the increase of EOT is remarkably inhibited, and good interface quality is kept.

Examples disclosed relate to performing a partial gap fill process in a bottom-up manner using atomic layer deposition (ALD). One example provides a method of partially filling a gap in a substrate. The method includes depositing a silicon nitride sub-conformal layer in a first portion of the gap and not in a second portion of the gap. The first portion extends from a top of the gap to a selected depth within the gap. The second portion extends from a selected depth to a bottom of the gap. The method further includes performing a plurality of ALD cycles to deposit a silicon-containing oxide in a second portion of the gap. The ALD cycle includes exposing the substrate to a silicon-containing precursor and reacting the silicon-containing precursor with an oxidizing agent to deposit a silicon-containing oxide on the surface in the second portion of the gap.

Provided are reduced-temperature plasma enhanced atomic layer deposition processes including application of a thin metal layer by contacting a substrate surface at temperatures of 300° C. or lower with a metal precursor and a plasma of a hydrogen-containing gas source generated directly or remotely.

The invention relates to the technical field of atomic layer deposition technology, in particular to an atomic deposition spraying cavity and atomic deposition equipment, which comprises an upper cavity cover, a spraying head, a gas homogenizing assembly, a substrate and a lower cavity, the upper cavity cover and the lower cavity can define a spraying cavity, the substrate is arranged on the lower cavity and used for bearing a substrate, and the spraying head is arranged on the upper cavity cover; the gas uniformizing assembly is arranged between the spraying head and the substrate and is provided with a gas dispersing plate, a buffer layer and a uniformizing plate; a plurality of air dispersing holes are uniformly formed in the air dispersing plate in a penetrating manner, and a plurality of turbulent flow bulge structures are uniformly arranged at intervals; the gas dispersing plate, the buffer layer and the uniform plate are laminated from top to bottom to form a three-stage flow field regulation and control system, so that the gas flow uniformity and stability are remarkably improved, and the technical problems that in the prior art, the gas homogenizing effect of a single-layer gas homogenizing plate in a spraying cavity is limited, spraying is often uneven, and a compact film cannot be formed are solved; the thickness uniformity of the prepared film is ensured, and the film preparation quality is improved.

The invention discloses a high-potential-corrosion-resistant composite coating as well as a preparation method and application thereof. The high-potential-corrosion-resistant composite coating comprises a metal transition layer, a graphite-like amorphous carbon layer and a SnO2 hole sealing layer which are sequentially formed on the surface of the metal bipolar plate serving as a substrate, wherein the SnO2 hole sealing layer is prepared in an atomic layer deposition mode. According to the high-potential-corrosion-resistant composite coating provided by the invention, the SnO2 layer is deposited on the surface of the amorphous carbon coating, so that the effect of closing amorphous carbon defects is achieved, and the high-potential-corrosion-resistant composite coating has excellent corrosion-resistant protection performance under 1.6 V high-potential corrosion.

The invention discloses a preparation method of a novel mixed metal oxide coating titanium electrode, and relates to the technical field of electrode preparation, the method comprises the following specific steps: titanium substrate pretreatment: a titanium plate is sequentially subjected to gradient polishing with 120-800-mesh abrasive paper, the polished titanium substrate is subjected to hydrochloric acid solution etching, argon plasma surface activation and drying treatment, and a titanium substrate is obtained; obtaining a clean substrate surface with proper roughness; through the low-temperature plasma treatment, pulsed bias magnetron sputtering and laser-induced atomic layer deposition (LA-ALD) combined technology, the binding force of the coating and the titanium substrate is remarkably improved, high-energy particles are used for bombarding the surface of the titanium substrate in the low-temperature plasma treatment, residual impurities are effectively removed, the surface roughness and active sites are increased, and the surface hardness of the titanium substrate is improved. In the pulsed bias magnetron sputtering process, the surface of the substrate is further cleaned through periodic ion bombardment, atomic diffusion and mixing between the coating and the substrate are promoted, a transition layer structure is formed, and therefore the binding force is greatly enhanced.

A memory device having: a three-dimensional array of nodes configured on a semiconductive substrate. Each respective node in the array has a selector transistor; and a memory cell include: a first layer of conductive material configured as a first electrode terminal, the first electrode terminal connected to the selector transistor; a second layer of conductive material configured as a second electrode terminal; and a layer of a chalcogenide alloy sandwiched between the first electrode terminal and the second electrode terminal. The chalcogenide alloy includes a ternary Indium-Arsenic-Selenium material or a ternary Indium-Arsenic-Tellurium material, deposited using a technique of atomic layer deposition.