1484 results about "Atomic layer deposition" patented technology

The invention is suitable for the field of atomic layer deposition, and discloses an atomic layer deposition process management method and system based on digital twinning, and the method comprises the steps: building a digital twinning model of an atomic layer deposition production system based on a multi-scale physical information neural network model; acquiring real-time reaction chamber process parameters and real-time state variables, and inputting the real-time reaction chamber process parameters and the real-time state variables into the digital twin model to obtain physical field distribution in the reaction chamber and a predicted growth state of a film on the surface of the substrate; based on the physical field distribution in the reaction cavity and the substrate surface film prediction growth state, decision analysis is carried out through a pre-trained reinforcement learning agent, and correction parameters used for optimizing the film growth quality are obtained; and generating a correction instruction based on the correction parameter, and updating the process parameter of the reaction cavity based on the correction instruction, so that the film on the surface of the substrate in the reaction cavity reaches the target film thickness and uniformity, and thus real-time intelligent closed-loop control of perception-prediction-decision-execution can be formed.

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.

The invention discloses a high-weather-resistance bismuth vanadate coating and a preparation method thereof, and belongs to the technical field of inorganic pigment modification. The high-weather-resistance bismuth vanadate coating comprises bismuth vanadate matrix particles, and the surfaces of the bismuth vanadate matrix particles are sequentially coated with an amorphous aluminum oxide layer, a cerium oxide layer and a fluorinated silicon oxide layer. The amorphous aluminum oxide layer is formed in an atomic layer deposition mode; the cerium oxide layer is formed by hydrothermal treatment of a cerium source. The preparation technology has accurate and controllable technological parameters, is suitable for industrial production, can replace the traditional toxic pigment containing lead and cadmium, and meets the requirements of environmental regulations. The bismuth vanadate coating has excellent weather resistance and chemical stability, the service life of a product can be prolonged, the maintenance cost is reduced, and a reliable solution is provided for development of high-performance environment-friendly pigments.

The invention provides a TEM sample and a preparation method and application thereof.According to the preparation method of the TEM sample, on the premise that the hole structure of a semiconductor device is not affected, part of residual polymer accumulated and blocked in a hole opening in the semiconductor device is removed through reactive ion etching, so that the hole opening is expanded and not blocked any more; a protective colloid can enter a pore structure for filling and precursor material plating of atomic layer deposition is facilitated, the definition of the side wall of the pore is enhanced, and the quality and the final observation effect of the TEM sample are effectively improved; the equipment and technology adopted by the preparation method of the TEM sample provided by the invention are low in investment, and the operation process is simpler and faster than that of a Fab etching process; meanwhile, batch laboratory-scale sample treatment can also be realized; in addition, compared with a wet chemical corrosion cleaning technology for removing residual polymers, the problems of chemical reagent residues, chemical reactant pollution and the like at the bottom of the deep hole structure are avoided.

The invention discloses atomic layer deposition equipment and a deposition method, and the atomic layer deposition equipment comprises a reaction cavity; the first end of the main gas inlet pipeline is communicated with a reaction gas source, and the second end of the main gas inlet pipeline is communicated with the reaction cavity; the first end of the pressure control pipeline communicates with the main air inlet pipeline, and the second end communicates with the air pump; the first end of the inert gas pipeline is communicated with an inert gas source, and the second end is communicated with the reaction cavity; the first end of the exhaust pipeline is communicated with the reaction cavity, and the second end is communicated with the air pump. When the atomic layer deposition equipment introduces the reaction gas into the main gas inlet pipeline, the pressure in the pressure control pipeline is controlled to be greater than the pressure in the reaction cavity, so that the pressure of the reaction gas in the main gas inlet pipeline is rapidly increased in a short time, and the reaction gas is pressed into the reaction cavity and adsorbed on a substrate.

The invention provides a Pt-Sn bimetallic catalyst and a preparation method and application thereof.The preparation method comprises the steps that 1, a Y molecular sieve is placed in a mixed solution of KOH and methyl alcohol, centrifugation and washing are conducted till the Y molecular sieve is neutral after stirring, drying and roasting are conducted, and a non-acid KY molecular sieve is obtained; the silica-alumina ratio of the Y molecular sieve is 3-100; 2) taking the non-acidic KY molecular sieve as a carrier, and loading Sn by adopting an atomic layer deposition technology to obtain a Sn-modified non-acidic KY molecular sieve; and 3) loading Pt by using the Sn-modified non-acidic KY molecular sieve as a carrier and adopting an atomic layer deposition technology to obtain the Pt-Sn bimetallic catalyst. According to the preparation method provided by the invention, spatial distribution of Pt and Sn is accurately regulated and controlled by combining an atomic layer deposition technology, so that the electronic state of Pt species is adjusted, alkane is promoted to be dehydrogenated into an olefin intermediate, and the aromatization catalytic activity and the aromatic hydrocarbon selectivity of alkane are improved.

The invention discloses a high-porosity organic salt framework confinement nano-metal hydrogen storage material and a preparation method thereof, and belongs to the field of new energy materials. The material takes a carboxylic acid organic salt framework (POS-1) as a carrier, the specific surface area of the material is 1520 m < 2 > / g, the pore size distribution is 1.8-2.5 nm, nano Mg / Ni particles (the average particle size is 3.2 + / -0.5 nm) are confined in pores through a gradient loading and in-situ reduction technology, and an atomic layer deposition (ALD) is adopted to modify a Pd nano catalyst (the loading capacity is 0.48 wt%). The reversible hydrogen storage capacity of the material at room temperature reaches 5.8 wt%, the hydrogen desorption temperature is lower than 80 DEG C, and the capacity retention ratio is larger than or equal to 92% after 100 times of circulation. The preparation method comprises the steps of organic salt framework synthesis, metal precursor gradient loading, low-temperature reduction (250 DEG C), hydrogenation activation and the like, the process is simple and controllable, and the catalyst is suitable for scenes such as a vehicle-mounted hydrogen storage system.

The invention discloses a gate dielectric film growth process, an HEMT (High Electron Mobility Transistor) device and a preparation method, and the gate dielectric film growth process comprises the steps: executing a primary process cycle of atomic layer deposition, and forming an amorphous gate dielectric film on the surface of a substrate; after the primary process circulation is completed, in-situ gas plasma treatment is executed, a single crystal gate dielectric film converted from the amorphous gate dielectric film after treatment is obtained, and when the single crystal gate dielectric film is formed between a metal gate and a barrier layer of the HEMT device, the interface state of the metal gate at a gate groove can be improved, the quality of a contact interface below gate metal is improved, and the performance of the HEMT device is improved. And the defect density and the electron trapping effect are reduced, so that the problems of serious influence on safe operation of the device and even grid degradation caused by grid leakage and threshold voltage drift after stress of the device can be effectively avoided, and the performance of the device is improved.

A component for use in a semiconductor processing chamber is provided. A metal or metal alloy component body has a process-facing surface. An intermediate aluminum oxide coating is disposed on the process-facing surface, the intermediate aluminum oxide coating being at least 99% pure by weight and having a porosity of less than 0.1% by volume, the intermediate aluminum oxide coating having a first thickness. A process-exposed layer is disposed on the intermediate aluminum oxide coating, the process-exposed layer comprising at least one of yttrium, hafnium, zirconium, lanthanum, magnesium, and a lanthanide, the process-exposed layer being at least 99% pure by weight, having a porosity of less than 0.1%, and having a second thickness, the second thickness being less than or equal to the first thickness.

The invention discloses an atomic layer deposition silicon-carbon composite material, a preparation method and application thereof, a core-shell coating structure composed of an inner core and an outer shell is adopted, the inner core is a multi-element doped silicon-carbon material, and the outer shell is a solid electrolyte composite layer; the mass ratio of the inner core to the shell is (80-95): (5-20); the solid electrolyte is deposited on the surface of the specific silicon carbon material through an atomic vapor deposition method, so that the expansion is reduced, and the cycle performance of the battery is improved.

The invention belongs to the field of thin films, and particularly discloses an atomic layer deposition method and a thin film prepared through the atomic layer deposition method. According to the deposition method, the reaction cavity, the two input pipeline systems, the outlet valve and the vacuum pump in the atomic layer deposition system are used for controlling precursor pulse deposition and inert gas purging conditions in the atomic deposition process, and the film deposition state is improved; the efficiency of purging and removing substances and impurity residues such as a precursor and a reaction product thereof is improved, the problem that the quality of a deposited film is affected by the impurity residues in a reaction system or on the surface of a sample in the film deposition process is avoided, the uniformity and compactness of film deposition and the coverage rate and conformal rate of a film on the surface of a base material hole are improved, the defects of the film are reduced, and the yield is improved. And the method can be applied to a substrate with a high aspect ratio structure to deposit the film, so that the purpose of manufacturing a large-size complicated special-shaped structure device is achieved.

The invention discloses an Internet of Things and AI energized smart energy multi-energy complementary heating control system, which relates to the technical field of smart energy heating control, and comprises an atomic layer deposition sensing module for realizing ultra-sensitive measurement of temperature and humidity; edge nodes are calculated through photons, and the data processing energy efficiency is improved; the shape memory alloy-piezoelectric composite execution module is used for accurate and rapid adjustment; the multi-scale heat coordination module is used for strengthening heat transmission; the magnetofluid sealing and regulating module is used for dynamically controlling the flow; the terahertz metasurface communication module guarantees high-speed communication, and the system optimizes energy complementation and intelligent regulation and control through multi-technology fusion. According to the invention, the sensing precision, the data processing speed and the execution precision are improved, the heat transmission efficiency is enhanced, the flow dynamic regulation and control and high-speed reliable communication are realized, the room temperature standard reaching rate is improved and the energy consumption is reduced through digital twin optimization control, and an efficient low-carbon scheme is provided for smart energy heating.

The invention relates to a p-type niobium oxide dipole-based metal-oxide-semiconductor device and a manufacturing method thereof, and belongs to the technical field of semiconductor device manufacturing. According to the technical scheme, the MOS device is provided. A gate dielectric stack of the MOS device sequentially comprises an interface layer, a high-k dielectric layer and a p-type electric dipole layer containing niobium oxide from bottom to top. According to the preparation method, the dipole layer is deposited by adopting an atomic layer deposition process, and then atoms in the dipole layer are driven to be diffused to the interface of the high-k dielectric layer and the interface layer through high-temperature rapid annealing treatment so as to form effective electric dipoles. Compared with the prior art, the high dielectric constant characteristic is utilized, the threshold voltage can be positively regulated and controlled to a larger extent, meanwhile, the increase of EOT is remarkably inhibited, and good interface quality is kept.

Provided are reduced-temperature plasma enhanced atomic layer deposition processes including application of a thin metal layer by contacting a substrate surface at temperatures of 300° C. or lower with a metal precursor and a plasma of a hydrogen-containing gas source generated directly or remotely.

The invention discloses a high-potential-corrosion-resistant composite coating as well as a preparation method and application thereof. The high-potential-corrosion-resistant composite coating comprises a metal transition layer, a graphite-like amorphous carbon layer and a SnO2 hole sealing layer which are sequentially formed on the surface of the metal bipolar plate serving as a substrate, wherein the SnO2 hole sealing layer is prepared in an atomic layer deposition mode. According to the high-potential-corrosion-resistant composite coating provided by the invention, the SnO2 layer is deposited on the surface of the amorphous carbon coating, so that the effect of closing amorphous carbon defects is achieved, and the high-potential-corrosion-resistant composite coating has excellent corrosion-resistant protection performance under 1.6 V high-potential corrosion.

The invention discloses a preparation method of a novel mixed metal oxide coating titanium electrode, and relates to the technical field of electrode preparation, the method comprises the following specific steps: titanium substrate pretreatment: a titanium plate is sequentially subjected to gradient polishing with 120-800-mesh abrasive paper, the polished titanium substrate is subjected to hydrochloric acid solution etching, argon plasma surface activation and drying treatment, and a titanium substrate is obtained; obtaining a clean substrate surface with proper roughness; through the low-temperature plasma treatment, pulsed bias magnetron sputtering and laser-induced atomic layer deposition (LA-ALD) combined technology, the binding force of the coating and the titanium substrate is remarkably improved, high-energy particles are used for bombarding the surface of the titanium substrate in the low-temperature plasma treatment, residual impurities are effectively removed, the surface roughness and active sites are increased, and the surface hardness of the titanium substrate is improved. In the pulsed bias magnetron sputtering process, the surface of the substrate is further cleaned through periodic ion bombardment, atomic diffusion and mixing between the coating and the substrate are promoted, a transition layer structure is formed, and therefore the binding force is greatly enhanced.

A memory device having: a three-dimensional array of nodes configured on a semiconductive substrate. Each respective node in the array has a selector transistor; and a memory cell include: a first layer of conductive material configured as a first electrode terminal, the first electrode terminal connected to the selector transistor; a second layer of conductive material configured as a second electrode terminal; and a layer of a chalcogenide alloy sandwiched between the first electrode terminal and the second electrode terminal. The chalcogenide alloy includes a ternary Indium-Arsenic-Selenium material or a ternary Indium-Arsenic-Tellurium material, deposited using a technique of atomic layer deposition.

Methods for depositing a metal contact stack on a substrate are described. The metal stack includes a metal cap layer and a molybdenum conductor layer. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

The invention discloses a method for improving the performance of an HZO ferroelectric capacitor through plasma interface treatment. The method comprises the following steps: forming a TiN bottom electrode on a Si substrate material through deposition; zrO2 and HfO2 are deposited on the TiN bottom electrode through an atomic layer to form an HZO ferroelectric medium layer; performing plasma treatment on the upper surface of the HZO ferroelectric dielectric layer; after processing, a TiN top electrode is formed on the upper surface of the HZO ferroelectric dielectric layer through deposition; carrying out rapid thermal annealing treatment in an N2 atmosphere; according to the method, plasma is adopted to process the upper surface of the ferroelectric film, and the oxygen vacancy distribution uniformity of the upper surface of the HZO film can be optimized, so that the wake-up effect is inhibited, and the performance of the ferroelectric film is improved; plasma is adopted to process the upper surface of the ferroelectric film, and generation of oxygen vacancies on the upper surface of the HZO film can be inhibited, so that electric leakage is reduced, the fatigue effect and the imprinting effect are inhibited, and the performance of the ferroelectric film is improved.

Exemplary methods of semiconductor processing may include i) performing an inhibition operation on a substrate disposed within a processing region of a semiconductor processing chamber. The substrate may define one or more features characterized by an aspect ratio of greater than or about 30:1. The methods may include ii) performing a silicon-containing atomic layer deposition (ALD) process. The silicon-containing ALD process may deposit a silicon-containing material in the one or more features. The methods may include iii) etching a portion of the silicon-containing material from an upper portion of the one or more features. The methods may include iv) repeating operations i) through iii) for a plurality of cycles.

The invention belongs to the field of microelectronics, and particularly relates to a ferroelectric capacitor, a preparation method thereof and a three-dimensional ferroelectric memory array, and the ferroelectric capacitor comprises a substrate, a bottom electrode, a ferroelectric dielectric layer, a deoxidizing layer and a top electrode which are sequentially arranged from bottom to top; the ferroelectric medium layer is an Hf < 1-x > Zr < x > O < 2 > layer, 0 lt; xlt; the Hf-rich composition is realized by controlling the Hf: Zr super-cycle ratio of atomic layer deposition; the thickness of the ferroelectric medium layer is 1-6 nm, and the thickness of the bottom electrode is 0.1-5 nm. Compared with the prior art, the problems of polarization characteristic degradation caused by thinning of the ferroelectric layer in the hafnium-based ferroelectric capacitor and crosstalk in the FeRAM in the prior art are solved. According to the scheme, the oxygen vacancy concentration is accurately adjusted to inhibit the formation of a non-ferroelectric phase, so that the ultra-thin ferroelectric film can still maintain relatively high remanent polarization while the size is reduced, a storage window is effectively improved, and the wake-up requirement is reduced.

The invention discloses a double-metal gradient diffusion layer modified high-nickel ternary positive electrode material and a preparation method thereof. The preparation method comprises the following steps: filtering and uniformly dispersing high-nickel ternary positive electrode material powder; introducing inert gas into the atomic layer deposition system, and raising the temperature to a target temperature; respectively preheating the metal precursors A and B to proper temperatures; the preparation method comprises the following steps: sequentially introducing a metal precursor A, precursor water, a metal precursor B and precursor water into a reaction chamber, alternately depositing according to a pulse-reaction-purging sequence, and repeatedly circulating the process to obtain the bimetallic oxide coated high-nickel ternary positive electrode material, and post-annealing treatment. According to the bimetal gradient diffusion layer modified high-nickel ternary positive electrode material prepared by the preparation method disclosed by the invention, the lithium storage performance of the high-nickel ternary material is greatly improved, excellent cycling stability and rate capability are obtained, the coating layer is accurate and controllable, the preparation process is simple, meanwhile, large-batch production can be realized, and relatively high application value is achieved.

Generally, examples are provided relating to filling gaps with a dielectric material, such as filling trenches between fins for Shallow Trench Isolations (STIs). In an embodiment, a first dielectric material is conformally deposited in a trench using an atomic layer deposition (ALD) process. After conformally depositing the first dielectric material, the first dielectric material is converted to a second dielectric material. In further examples, the first dielectric material can be conformally deposited in another trench, and a fill dielectric material can be flowed into the other trench and converted.

The application discloses a preparation method and application of a ferroelectric full water-splitting photocatalyst. The preparation method comprises the following steps: S1: pretreating a ferroelectric material to obtain a pretreated ferroelectric material; S2: after atomic layer deposition of the pretreated ferroelectric material and a metal organic complex source material, non-active gas I is introduced to perform blowing I, water is introduced, non-active gas II is introduced again to perform blowing II, and the first deposition is completed; and S3: according to the thickness of the ferroelectric full water-splitting photocatalyst, the step S2 is circularly performed to obtain the ferroelectric full water-splitting photocatalyst. The ferroelectric material can efficiently photocatalyze full water splitting through accurate regulation and modification of the surface of the ferroelectric material by the atomic layer deposition technology. The method not only provides an experimental basis for researching the limiting factors of the ferroelectric material in a photocatalytic reaction, but also provides a new idea for constructing an efficient photocatalyst by using efficient charge separation and depolarization electric field of the ferroelectric material.

The invention belongs to the field of microelectronics, and particularly relates to a ferroelectric capacitor for improving initial state polarization intensity and a preparation method and application thereof.The ferroelectric capacitor comprises a substrate, a bottom electrode, an ultrathin ferroelectric medium layer and a top electrode which are sequentially stacked from bottom to top; the ultra-thin ferroelectric dielectric layer is an Hf < 1-x > Zr < x > O < 2 > thin film, 0 lt; xlt; and in the atomic layer deposition process, the Hf-rich thin film is grown and formed by controlling the Hf: Zr super-cycle ratio. Compared with the prior art, the ferroelectric capacitor solves the problems that in the prior art, in order to improve the initial-state polarization intensity of the ferroelectric capacitor, a function matched with the HZO thin film is added, the thickness is increased due to layers, and the improvement effect is limited. According to the scheme, the doping proportion of Hf in the ultra-thin ferroelectric dielectric layer is properly increased, the formation energy of a non-ferroelectric T phase is remarkably improved, stable existence of a ferroelectric O phase is further promoted, and therefore the ferroelectric O phase with ferroelectric hysteresis close to the situation that awakening is not needed, a high initial state 2Pr value and a high content is achieved.

The invention discloses a ternary positive electrode material as well as a preparation method and application thereof, and belongs to the technical field of lithium ion batteries. The method comprises the following steps: modifying a ternary matrix material in a composite doping manner of rare earth elements and transition metals, and then coating the surface of the material with a layer of amorphous ferric fluoride in a manner of combining atomic layer deposition with fluorination reaction. The ternary positive electrode material provided by the invention has higher rate capability and better cycling stability, and can maintain better chemical performance under high current density, so that the problems of capacity loss and poor electrical performance of the ternary positive electrode material of the lithium battery in a high-voltage long-cycle process are greatly relieved.

The invention discloses a negative electrode composite current collector of a non-negative electrode lithium battery and a preparation method of the negative electrode composite current collector. The preparation method comprises the following steps: preparing a metal nanoparticle-metal organic framework composite material MNP-MOF-NH2 by adopting a solvothermal method; the preparation method comprises the following steps: adding MNP-coated MOF-NH2, a conductive agent and a binder into a solvent, mixing and uniformly stirring to obtain a negative electrode coating slurry, coating the surface of a negative electrode current collector foil with the negative electrode coating slurry to form a first coating, placing the first coating in a reaction chamber of atomic layer deposition equipment, introducing a metal source and gas in an alternate feeding deposition mode to generate a layer of compact lithium-loving metal oxide, and carrying out vacuum drying to obtain the lithium-loving metal oxide negative electrode. And drying to obtain a double-gradient composite protective layer, namely the negative electrode composite current collector of the non-negative electrode lithium battery. According to the invention, a double-layer structure of a compact lithium-loving layer, a porous metal organic framework and a metal particle composite layer is constructed, and the upper lithium-loving metal oxide induces uniform nucleation of lithium, so that the deposition barrier is reduced. The network structure of the lower layer MOF provides a space limiting effect to accommodate and separate lithium deposition, in addition, polar groups contained in the MOF promote desolvation and transport of Li +, and metal nanoparticles accelerate ion / electron transport.

The invention relates to an atomic layer deposition device and process based on multi-dimensional electric field vector regulation and control, and the atomic layer deposition device comprises a reaction cavity assembly, a gas distribution assembly, an electric field generation assembly, a substrate rotating mechanism and a multi-dimensional electric field control system, the upper cavity is provided with a reaction source I inlet, a reaction source II inlet and a carrier gas inlet, and the lower cavity is provided with a tail gas outlet; the gas distribution assembly comprises a spray located at the bottom of the upper cavity, a flow uniformizing plate is arranged between the spray and the carrier gas inlet, a cooling channel is arranged in the spray, and the cooling channel is communicated with a spray cooling water inlet and a spray cooling water outlet. Accurate regulation and control on adsorption, migration and reaction processes of reaction source atoms on the surface of the substrate are realized, the film deposition efficiency is improved, the uniformity, shape retention and quality of the film are improved, and the requirements on high-precision film preparation in the fields of semiconductors, photoelectric devices and the like are met.

The invention relates to the technical field of peep-proof film manufacturing, and discloses a high-light-transmittance peep-proof film based on surface modification and a preparation method of the high-light-transmittance peep-proof film. The preparation method comprises the following steps: sequentially carrying out plasma activation, ALD atomic layer deposition and HEMA carboxyl-based layer polymerization on a PET film to obtain a modified PET film; coating the modified PET film with a dispersion liquid prepared from a polystyrene-polymethylacrylic acid solution and graphene quantum dots to form a peep-proof layer; depositing a TiO2 layer and a SiO2 layer on the modified PET film to form a high refractive index layer; diamond particles, MoS2 nanosheets and resin are mixed and coated on the high-refractive-index layer to form the wear-resistant layer. The PET film is modified through plasma activation, atomic layer deposition and free radical polymerization, the physical adsorption limitation of a traditional coating is broken through, chemical covalent binding with a subsequent functional layer is achieved, meanwhile, a light scattering path is optimized by preparing a TiO2 / SiO2 alternating layer, and the peep-proof effect and the optical stability are improved.

A coated optical component includes an optical component and a conformal coating. The optical component is crystalline calcium fluoride and the conformal coating is an atomic layer deposition (ALD) coating in contact with a surface of the optical component. The ALD coating includes a metal fluoride ALD coating having a metal different from calcium. The ALD coating can include other metal oxide or metalloid oxide ALD coating layers. The method for making the coated optical component includes depositing an atomic layer deposition (ALD) coating on a surface of the optical component, where the ALD coating can be a metalloid oxide, a metal oxide, a metal fluoride having a metal that is different from calcium, or combinations of these. Sulfur hexafluoride is used as a fluorine source in the ALD process.