1873 results about "Metal halides" patented technology

Method of producing one or more transition metal dichalcogenide (MX₂) layers on a substrate, comprising the steps of: obtaining a substrate having a surface and depositing MX₂ on the surface using ALD deposition, starting from a metal halide precursor and a chalcogen source (H₂X), at a deposition temperature of about 300° C. Suitable metals are Mo and W, suitable chalcogenides are S, Se and Te. The substrate may be (111) oriented. Also mixtures of two or more MX₂ layers of different compositions can be deposited on the substrate, by repeating at least some of the steps of the method.

Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX_Y, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a reducing precursor onto the substrate. A reaction between the metal halide precursor and the reducing precursor forms a metal film. Specifically, the method discloses forming a metal boride or a metal silicide film.

A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane precursor onto the substrate. A reaction between the metal halide precursor and the decaborane precursor forms a metal film, specifically a metal boride.

A method for depositing a film to form an air gap within a semiconductor device is disclosed. An exemplary method comprises pulsing a metal halide precursor onto the substrate and pulsing an oxygen precursor onto a selective deposition surface. The method can be used to form an air gap to, for example, reduce a parasitic resistance of the semiconductor device.

A series of noble metal organometallic complexes of the general formula (I): ML_aX_b(FBC)_c, wherein M is a noble metal such as iridium, ruthenium or osmium, and L is a neutral ligand such as carbonyl, alkene or diene; X is an anionic ligand such as chloride, bromide, iodide and trifluoroacetate group; and FBC is a fluorinated bidentate chelate ligand such as beta diketonate, beta-ketoiminate, amino-alcoholate and amino-alcoholate ligand, wherein a is an integer of from zero (0) to three (3), b is an integer of from zero (0) to one (1) and c is an 10 integer of from one (1) to three (3). The resulting noble metal complexes possess enhanced volatility and thermal stability characteristics, and are suitable for chemical vapor deposition(CVD) applications. The corresponding noble metal complex is formed by treatment of the FBC ligand with a less volatile metal halide. Also disclosed are CVD methods for using the noble metal complexes as source reagents for deposition of noble metal-containing films such as Ir, Ru and Os, or even metal oxide film materials IrO₂, OsO₂ and RuO₂.

A method and apparatus for forming heterojunction stressor layers is described. A germanium precursor and a metal precursor are provided to a chamber, and an epitaxial layer of germanium-metal alloy formed on the substrate. The metal precursor is typically a metal halide, which may be provided by subliming a solid metal halide or by contacting a pure metal with a halogen gas. The precursors may be provided through a showerhead or through a side entry point, and an exhaust system coupled to the chamber may be separately heated to manage condensation of exhaust components.

Embodiments of the invention disclosed herein generally relate to a hydride vapor phase epitaxy (HVPE) deposition chamber that utilizes a plasma generation apparatus to form an activated precursor gas that is used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, the plasma generation apparatus is used to create a desirable group-III metal halide precursor gas that can enhance the deposition reaction kinetics, and thus reduce the processing time and improve the film quality of a formed group-III metal nitride layer. In addition, the chamber may be equipped with a separate nitrogen containing precursor activated species generator to enhance the activity of the delivered nitrogen precursor gases.

A process for forming a thermoplastic vulcanizate compromising the steps of dynamically vulcanizing a rubber within a blend that comprises the rubber and a thermoplastic polymer, where said step of vulcanizing is carried out by using a phenolic resin in the presence of a catalyst system formed by combining a metal halide and a metal carboxylate. Also, a thermoplastic vulcanizate having low moisture pick-up with a technologically useful cure.

A three-stage electronic ballast for metal halide lamps mainly comprises a step-up converter, a step-down converter and a full-bridge DC-AC converter, wherein the step-down converter operates an inductor in a continuous boundary current mode to achieve reducing power loss and enhancing efficiency. Equipped with a micro processor, the electronic ballast further possesses the function of power regulation. The electronic ballast can be added with various protective functions without complex control circuits and sensing elements, thereby becoming a high-quality and low-cost electronic ballast for metal halide lamps.

Methods are described for converting carbohydrates including, e.g., monosaccharides, disaccharides, and polysaccharides in ionic liquids to value-added chemicals including furans, useful as chemical intermediates and/or feedstocks. Fructose is converted to 5-hydroxylmethylfurfural (HMF) in the presence of metal halide and acid catalysts. Glucose is effectively converted to HMF in the presence of chromium chloride catalysts. Yields of up to about 70% are achieved with low levels of impurities such as levulinic acid.

A surface-enabled, metal ion-exchanging battery device comprising a cathode, an anode, a porous separator, and a metal ion-containing electrolyte, wherein the metal ion is selected from (A) non-Li alkali metals; (B) alkaline-earth metals; (C) transition metals; (D) other metals such as aluminum (Al); or (E) a combination thereof; and wherein at least one of the electrodes contains therein a metal ion source prior to the first charge or discharge cycle of the device and at least the cathode comprises a functional material or nano-structured material having a metal ion-capturing functional group or metal ion-storing surface in direct contact with said electrolyte, and wherein the operation of the battery device does not involve the introduction of oxygen from outside the device and does not involve the formation of a metal oxide, metal sulfide, metal selenide, metal telluride, metal hydroxide, or metal-halogen compound. This energy storage device has a power density significantly higher than that of a lithium-ion battery and an energy density dramatically higher than that of a supercapacitor.

The method for removing mercury from a flue gas stream of the present invention is comprised of first treating a sorbent with a metal halide, and then contacting a sufficient amount of the sorbent with a gas stream for a sufficient amount of time to bind with a desired amount of the mercury in said gas stream. The metal is selected from Groups I and II of the periodic table of the elements. The halide is selected from the group consisting of I, Br, Cl. The metal halide comprises from about 0.5% to 25% by weight of said treated sorbent.

A method of growing single-crystals of a cubic (zinc blende) form of gallium nitride, the method comprising the steps of: placing into a reaction tube or acid resistant vessel a gallium source, anhydrous ammonia, an acid mineralizer and a metal halide salt selected from the group consisting of alkali metal halides, copper halides, tin halides, lanthanide halides and combinations thereof; closing said reaction tube or vessel; heating said reaction tube; cooling said reaction tube or vessel; and collecting single-crystals of cubic (zinc blende) form of GaN; wherein said reaction tube or vessel has a temperature gradient with a hot zone of at least 250° C., wherein said reaction tube or vessel has a temperature gradient with a cool zone of at least 150° C., and wherein said acid mineralizer has a sufficient concentration to permit chemical transport of GaN in said reaction tube or vessel from said hot zone to said cool zone due to said temperature gradient within said reaction tube or vessel.

Oxidative sorbents are provided for adsorbing elemental or oxidized mercury from mercury-containing fluids such as flue gas from a coal-burning power utility or the like at a temperature range of about 50 to 350 ° C. The method of preparing and using the oxidative sorbents is also provided. The oxidative sorbent compositions include one or more silicates capable of cation exchange with a plurality of active metal cations and their counter anions. The silicates may include those selected from clays such as montmorillonite, laumonite, bentonite, Mica, vermiculite and kaolinite, and from silica gels, natural and synthetic molecular sieves, zeolites, and ashes from stoker- and pulverized coal-fired boilers. The one or more oxidative metal halides and/or sulfates may be selected from the group consisting of CuCl, CuBr, CuCl₂, CuBr₂, CuSO₄, FeCl₂, FeCl₃, FeSO₄, Fe₂(SO₄)₃, ZnCl₂, ZnBr₂, NiCl₂, and NiSO₄. The oxidative sorbents may also include activated carbon.

Lithium ion battery positive electrode material are described that comprise an active composition comprising lithium metal oxide coated with an inorganic coating composition wherein the coating composition comprises a metal chloride, metal bromide, metal iodide, or combinations thereof. Desirable performance is observed for these coated materials. In particular, the non-fluoride metal halide coatings are useful for stabilizing lithium rich metal oxides.

The invention provides an economic process for the manufacture of 1,3,3,3-tetrafluoropropene (HFO-1234ze) by a two stage process. A vapor phase hydrofluorination of 1-chloro-3,3,3-trifluoropropene (HCFC-1233zd) into 1-chloro-1,3,3,3-tetrafluoropropane (HCFC-244fa) and/or 1,1,1,3,3-pentafluoropropane (HFC-245fa) is conducted, followed by the thermal dehydrochlorination of HCFC-244fa and dehydro fluorination of HFC-245fa into HFO-1234ze in the presence of a catalyst which comprises one or more of alkali metal halides, alkaline earth metal halides, halogenated metal oxides, zero oxidation state metals, zinc halides, palladium halides, and activated carbon.

A process for making a fluorinated olefin having the step of dehydrochlorinating a hydrochlorofluorocarbon having at least one hydrogen atom and at least one chlorine atom on adjacent carbon atoms, preferably carried out in the presence of a catalyst selected from the group consisting of (i) one or more metal halides, (ii) one or more halogenated metal oxides, (iii) one or more zero-valent metals/metal alloys, (iv) a combination of two or more of the foregoing.

An article of electrochemical energy conversion is provided that includes a separator. The separator has a first surface that defines at least a portion of a first chamber, and a second surface that defines a second chamber, and the first chamber is in ionic communication with the second chamber through the separator. The energy storage device further includes a plurality of cathodic materials. The plurality includes at least a first cathodic material and a second cathodic material. Both of the cathodic materials are in electrical communication with the separator and both are capable of forming a metal halide. A proviso is that if either of the first cathodic material or the second cathodic material is a transition metal, then the other cathodic material is not iron, arsenic, or tin.