821 results about "Metal halides" patented technology

The invention relates to the technical field of mesoporous carbon material preparation, in particular to a high-temperature mesoporous carbon preparation method which comprises the following steps: S1, mixing a metal halide and an inorganic hydrogen bond donor, and heating and stirring until a solution is clear to obtain an inorganic eutectic solvent; s2, mixing the inorganic eutectic solvent and a biomass raw material for reaction; s3, filtering and washing the material obtained in the step S2; and S4, carbonizing the material obtained in the step S3 in a high-temperature inert atmosphere to obtain the high-temperature mesoporous carbon. According to the method, the wood fiber biomass such as the lowest-value straw, the lowest-value bamboo and the lowest-value wood dust is directly used as raw materials, component separation does not need to be conducted on the wood fiber biomass, and high-value utilization of a large amount of low-value wood fiber biomass can be achieved. The method is relatively simple in process, relatively mild in condition and relatively high in product yield, and an activating agent does not need to be used. The biomass mesoporous carbon prepared by the method also has a high specific surface area in a huge mesoporous volume state, and the specific capacitance in an alkaline electrolyte exceeds 260F / g.

The present invention relates to a coating method for a high-nickel layered oxide positive electrode material, comprising the following steps: dissolving the high-nickel layered oxide positive electrode material, a high-valent metal halide, and an alkaline lithium source in a solvent, mixing them evenly, centrifuging, and filtering, and then calcining the obtained mixed powder to obtain a high-nickel layered oxide positive electrode material with a coated structure. The present invention utilizes an acid-base neutralization reaction to coat the high-nickel layered oxide positive electrode material, and the coated components include three elements: a high-valent metal, a halogen element (F or Cl) with a high electronegativity, and a Li element. The purpose of coating the former two is to improve the structural stability of the high-nickel layered oxide, and the latter provides a lithium source for the positive electrode material, while avoiding contact between the high-nickel layered oxide and the sulfide electrolyte, inhibiting the occurrence of side reactions, and being beneficial to the long-cycle stability of the sulfide all-solid-state lithium battery.

The invention relates to the technical field of luminescent materials, and discloses a preparation method and application of a transition metal and chalcogen ion doped metal halide high-efficiency wide-spectrum luminescent material, the chemical formula of the transition metal and chalcogen ion doped metal halide is Cs2Sn1-x-yCl6: x% Te < 4 + >, yMo < 4 + >, the ultra-wideband fluorescent powder converted light emitting diode (LED) covers the range from visible light (VIS) to near infrared light (NIR), and shows remarkable potential in practical application. According to the invention, ultra-wide spectrum emission from 400 nm to 1400 nm is realized in Mo < 4 + >-Te < 4 + > co-doped Cs2SnCl6, and the photoluminescence quantum yield of 95.3% is achieved, the excellent performance is realized through efficient energy transfer from Te < 4 + > to Mo < 4 + > and passivation synergistic effect of vacancy defects, and the performance can be verified through theoretical calculation and spectral research; finally, the ultra-wideband fluorescent powder conversion LED based on the Mo < 4 + > and Te < 4 + > co-doped Cs2SnCl6 is successfully prepared and is applied to the fields of blood gas analysis and night vision imaging.

Provided are metal silicide contact forming processes including providing a substrate having a bottom crystalline silicon and di-electric sidewalls. This may be followed by metal layer deposition to form metal layer selectively on the bottom crystalline silicon using a metal halide precursor and a reducing agent. A ratio of a reducing agent flow rate to a metal halide precursor flow rate is at least 10:1, or 10:1-10,000:1. After the metal layer deposition, the substrate is annealed to convert the metal layer to a metal silicide layer without any substrate contamination.

The invention discloses an inorganic-organic hybrid compound crystal and a preparation method thereof, and belongs to the technical field of organic-inorganic hybrid materials. The preparation method comprises the following steps: mixing raw materials containing hydroiodic acid, organic cage molecules RCC3 and a lead source with a solvent, and carrying out solvothermal reaction to obtain the inorganic-organic hybrid compound crystal. The chemical formula of the prepared inorganic-organic hybrid compound crystal is ({H18 [C72H108N12] 2 [(Pb10I36)]}. 2I), wherein [C72H108N12] is RCC3 acidified by hydroiodic acid, the crystal has a supramolecular three-dimensional structure assembled by a [Pb5I8] 3-anion cluster unit and a protonated RCC3 molecular cage through electrostatic and hydrogen-bond interaction, and belongs to a monoclinic system, and the space group is P21. The crystal structure is a metal halide-based organic-inorganic hybrid crystal constructed by taking an organic molecular cage as nitrogen-containing cations and lead iodide for the first time.

A solid electrode includes particles of an electroactive material, a solid electrolyte comprising particles of an ionic conducting compound having at least one halogen element, a conductive carbon, and a coating deposited on the particles of the electroactive material, the particles of the solid electrolyte, or a combination thereof. The coating includes a metal halide, a metal sulfide, a metal phosphide, a metal oxide, a metal selenide, or a combination of two or more thereof. A method for preparing the solid electrode includes milling a mixture of the electroactive material, the conductive carbon, and the solid electrolyte to produce the coated solid electrode material comprising the coating derived from decomposition products of the ionic conducting compound, the coating deposited on the particles of the electroactive material, the solid electrolyte, or a combination thereof.

Embodiments include a method of forming a contact structure on a semiconductor substrate. The method including selectively depositing a metal silicide layer over a contact formed within a cavity of a substrate and a bottom surface of the cavity using a selective deposition process, including forming a residual layer on a surface of a dielectric layer forming sidewalls of the cavity, wherein a thickness of the metal silicide layer deposited over the contact is greater than a thickness of the residual layer, removing at least a portion of the residual layer formed on the dielectric layer using an etching process that comprises exposing the metal selectively deposited layer to a metal halide containing precursor, and selectively depositing a metal fill over the metal silicide layer remaining over the contact after removing the at least the portion of the residual layer using a selective metal fill process.

The invention relates to the technical field of organic and inorganic hybrid functional materials, in particular to a doped chiral metal halide material with light-induced circular polarization luminescence and a preparation method and application of the doped chiral metal halide material, the chemical formula of the doped chiral metal halide material is L2BnC1-nX4, and the value of n is 0 lt; n is less than 1. The fluorescence quantum yield of a film sample is remarkably improved by using a transition metal ion or rare earth ion doping method. According to the invention, the plug splitting energy in the chiral metal halide is adjusted, so that the chiral optical property of the film material is remarkably improved. The preparation process of the chiral metal halide thin film is simple, the thin film does not need to be prepared after a single crystal material is obtained through a harsh single crystal preparation method, and the material composition and the doping proportion can be easily adjusted according to the requirements of material properties. The invention provides a feasible way for regulating and controlling the chiral optical property of the chiral metal halide by doping transition metal ions or rare earth ions.

The invention discloses a CO2 epoxy coupling catalyst as well as a preparation method and application thereof. The CO2 epoxy coupling catalyst is prepared by grafting disulfonic ionic liquid on the surface of Zr < 4 + > coordination defect hierarchical pore UiO-66-NH2 and introducing metal halide salt. The preparation method comprises the following steps: S1, preparing and synthesizing Zr < 4 + > coordination defect hierarchical pore UiO-66-NH2; s2, enabling the hierarchical pore UiO-66-NH2 to react and combine with the disulfonic ionic liquid, so as to obtain an ILs (at) UiO-66-NH2 compound; and S3, reacting and combining the ILs-coated UiO-66-NH2 compound with metal halide salt, and drying to obtain the CO2 epoxy coupling catalyst. The CO2 epoxy coupling catalyst can be applied to a coupling reaction of CO2 and an epoxy compound to synthesize cyclic carbonate.

The invention belongs to the technical field of photovoltaic solar materials, and particularly relates to a high-conversion-efficiency perovskite precursor material and a preparation method thereof. The high-conversion-efficiency perovskite precursor material is composed of phenyl ammonium cesium composite cations, metal halide, an additive, a nuclear auxiliary agent and a solvent. By compounding phenylethyl ammonium iodide and cesium iodide, phenylammonium and cesium cations are introduced into perovskite crystal lattices, organic-inorganic balance of the material is optimized, phenylammonium promotes formation of a quasi-two-dimensional structure, and damp-heat stability is enhanced; cesium ions fill A-site gaps, so that crystal lattices are tighter, and the thermal stability and the photoelectric conversion efficiency are improved; the synergistic matching addition of the metal halide realizes band gap regulation and control and spectrum matching, and quaternary ammonium salt adjusts nucleation and grain growth, so that a uniform film structure is ensured, and defects are reduced; and guanidine salt passivates defects after crystal growth, stabilizes crystal lattices, and improves charge life and device efficiency.

A method of forming a perovskite film includes depositing an ink onto a substrate and annealing the substrate to form the perovskite film. The ink includes one or more 2D perovskite crystals; one or more group one cations or ammonium halides; one or more metal halides; and one or more solvents. A perovskite ink includes one or more 2D perovskite crystals, one or more group one cations or ammonium halides, one or more metal halides and one or more solvents.

The invention discloses a preparation method of a perovskite thin film and a perovskite cell, and relates to the technical field of solar cells. The preparation method of the perovskite thin film comprises the following steps: forming a mixed layer containing PbI2 on a substrate as a metal halide framework layer; coating the metal halide framework layer with an organic ammonium salt solution containing a crystallization regulating agent to obtain a first device; wherein the crystallization regulating agent contains a guanidine group; and carrying out annealing treatment on the first device to obtain the perovskite thin film. According to the perovskite thin film, the problems that perovskite prepared in the prior art is small in grain size and uneven in interface can be solved, and the performance of the perovskite thin film is improved.

The utility model provides a testing device for a metal halogen battery. The testing device comprises a transparent container and a sealing cover, the bottom of the inner side of the transparent container is filled with a solid or liquid positive halogen simple substance; a negative electrode assembly is suspended on the top of the inner side of the transparent container, is positioned above the positive halogen simple substance and is not in direct contact with the positive halogen simple substance; the negative electrode assembly comprises two stacked negative electrode metal sheets and a conductive net clamped between the two negative electrode metal sheets; the conductive net is connected with a cathode lead, the top wall of the transparent container is provided with a first through hole for the cathode lead to pass through, and the upper end of the cathode lead passes through the first through hole and falls outside the transparent container; the side wall of the transparent container is provided with a second through hole for the positive lead to penetrate through, the inner end of the positive lead abuts against the surface of the negative metal sheet, and the outer end of the positive lead falls outside the transparent container. The testing device disclosed by the utility model can provide reference for selecting proper electrode materials and setting technical parameters during industrial production.

The invention discloses an ABX3 type metal halide perovskite thin film, a preparation method and a photovoltaic device. The film is prepared by an anti-solvent method; wherein organic molecules containing active halogen with the concentration of 0.1-50 mg / ml are added into the anti-solvent solution. According to the method, release of active halogen in organic molecules is utilized, the gradual evolution process of multiple metal halide complexes is regulated and controlled, generation of related defects such as halogen vacancies is inhibited, migration of halogen ions in a perovskite thin film is prevented, and uniform perovskite film forming is achieved; the perovskite photovoltaic device with high photoelectric conversion efficiency is realized by using the thin film provided by the invention, and the method is very suitable for industrial preparation of the large-area and high-performance perovskite photovoltaic device.

The present invention relates to the technical field of perovskite cells, and in particular to a method for preparing a perovskite film, a film, a perovskite cell, and a stacked cell. The preparation method comprises: preparing a buried substrate; the buried substrate comprising an alkali metal formate; forming a porous film containing a compound having a general chemical formula of BX2 on the buried substrate; and reacting the compound having a general chemical formula of BX2 in the porous film with a compound having a general chemical formula of AX to obtain a perovskite film; wherein B is a metal cation; A is an organic amine cation or an alkali metal cation; and X is a halogen ion or a pseudohalogen anion. Under the combined action of the alkali metal ions and the formate ions, the metal halide film forms a well-oriented porous film, and the pores in the porous film serve as channels for the organic amine cations or alkali metal cations to enter the metal halide film, allowing the metal halide within the porous film to fully react.

The invention discloses a sulfide solid electrolyte stable in wet air, a preparation method thereof and a battery, and belongs to the technical field of all-solid-state batteries, the sulfide solid electrolyte comprises the following raw materials in parts by weight: 20-100 parts of sulfide solid electrolyte and 1 part of metal halide component, the chemical formula of the sulfide solid electrolyte is Li < 6-x > PS < 5-x > Cl < 1 + x >, 0 < = x < = 0.6, the metal halide component comprises at least one metal halide, the chemical formula of the metal halide is MXn, n is greater than or equal to 2 and less than or equal to 4, M is one of Zr, Al, Zn, Sn, Sb and Bi, and X is one of F, Cl, Br and I. The metal halide and the sulfide solid electrolyte in a specific ratio are mixed, subjected to ball milling and then subjected to annealing treatment, and an in-situ doping coating layer is obtained on the surface of the sulfide solid electrolyte; and under the condition that the ionic conductivity of the sulfide solid electrolyte is slightly influenced, the wet air stability of the sulfide solid electrolyte is effectively improved.

The invention provides a halide solid electrolyte and a preparation method and application thereof, and the preparation method comprises the following steps: (1) mixing a metal halide, lithium halide and an organic amine compound to obtain a eutectic precursor; and (2) carrying out heat treatment on the eutectic precursor in an oxygen-free environment to obtain the halide solid electrolyte. According to the preparation method, firstly, the molecular-level uniformly-mixed eutectic precursor is obtained by utilizing the intermolecular interaction of the raw material components, then the precursor can be directly subjected to heat treatment, and the halide solid electrolyte can be obtained without introducing other treatment steps. Therefore, according to the preparation method, the preparation process is simplified, tedious preparation procedures are avoided, the energy consumption and the time cost are reduced, the period is short, and the production efficiency is remarkably improved. In addition, the adopted raw materials are environment-friendly and low in price. The preparation method has good universality and is beneficial to large-scale production.

To provide a production method that enables the selective acquisition of a high-purity 2-naphthalene derivative while controlling impurities that are difficult to be removed.SOLUTION: A method for producing a 2-naphthalene derivative includes reacting a sulfonyloxy compound with an organometallic halide in the presence of a nickel compound within a solvent. A residence time of a reaction solution in the reaction is within 1 minute.SELECTED DRAWING: None

The invention is suitable for the technical field of solar cells, and provides a perovskite solar cell module and a preparation method thereof. The perovskite solar cell module comprises an anode, a hole transport layer, a perovskite layer, an electron transport layer and a cathode which are sequentially laminated. An optical active material used for preparing the perovskite layer is metal halide perovskite, and the specific chemical formula is Cs0. 15FA0. 85PbI3; and a cathode interface material used for preparing the cathode interface layer is quinacridone derivative (DCNQA-PyBr). According to the invention, DCNQA-PyBr is used as the cathode interface material to be applied to the perovskite (such as a Cs0. 15FA0. 85PbI3 system) solar cell module, the thick film processing of the cathode interface material can be realized, the energy conversion efficiency of the perovskite solar cell module is improved, and the cathode interface material is suitable for large-scale production and can meet the requirement of large-area industrial production.

The present invention relates to a three-dimensional covalent organic framework@metal halide perovskite composite material and a preparation method and application thereof. The method comprises the following steps: in a first solvent, BTD, Por-8NH 2 The 3D COF material is reacted with TPDA, and then subjected to post-treatment after the reaction to obtain a 3D COF material; in a second solvent, the 3D COF material is reacted with lead halide, and then subjected to post-treatment after the reaction to obtain a 3D COF@PbX 2 Materials; In the third solvent, 3D COF@PbX 2 The material reacts with methylamine iodine, and after the reaction, 3D COF@MAPbX is obtained by post-treatment. 3 Composite material. 3D COF@MAPbX of the present invention 3 The composite material can be used as a photocatalyst, and has the advantage of good photocatalytic activity; in addition, the preparation method of the present invention enables the perovskite quantum dots to grow in situ in the pores of the COF, which is used to solve the problems of poor stability of the perovskite quantum dots in the environment and insufficient photocatalytic activity.

Methods and systems for direct-write liquid phase epitaxy of ionic materials are provided for herein, and relate to the manufacture of metal halide optics among other applications. Deposition of the ionic material is induced by mixing at least two fluids of differing composition, wherein the solubility limit of the ionic material in the mixed solution is lower than predicted from a linear combination of the original fluids. This deposition process is spatially controlled using a printhead, enabling localized material deposition and the ability to create arbitrary geometries in turn. In some cases, at least one of the fluids is saturated with the ionic material and surrounds the substrate upon which deposition occurs.

The invention discloses a continuous cyclic preparation method of hexafluorophosphate. The method comprises the following steps: S1, preparation of a metal salt anhydrous hydrogen fluoride solution: adding anhydrous hydrogen fluoride and metal halide salt into a reaction kettle, and uniformly mixing, so that the metal halide salt is dissolved in the anhydrous hydrogen fluoride to obtain the metal salt anhydrous hydrogen fluoride solution; s2, preparing a hexafluorophosphate anhydrous hydrogen fluoride solution: adding phosphorus pentachloride into the reaction kettle under a temperature control condition for reaction; a hexafluorophosphate anhydrous hydrogen fluoride solution is obtained; and S3, separation of hexafluorophosphate: transferring the hexafluorophosphate anhydrous hydrogen fluoride solution into a drying tower for drying, condensing gasified anhydrous hydrogen fluoride at the top of the drying tower into liquid anhydrous hydrogen fluoride by a condenser, refluxing the liquid anhydrous hydrogen fluoride into the reaction kettle in the step S1, and collecting a hexafluorophosphate product at the bottom of the drying tower. The continuous cyclic preparation method of hexafluorophosphate has the characteristics of high raw material utilization rate, simple process and good production continuity.

Metal getters in vaporizers, and related systems and methods, are provided. A vaporizer comprises a vessel having an outlet. The vessel is configured to discharge a metal halide vapor through the outlet. The vaporizer comprises a metal getter located within the vessel between the inlet and the outlet. When an oxygen-containing species is present within the vessel, an impurity content of the metal halide vapor that is discharged from the vessel is less than an impurity content of a precursor vapor that is discharged from a vessel without the metal getter.

Processes for decontaminating a plastic derived oil include contacting a plastic derived oil stream containing halogen-containing compounds with a decontamination catalyst at a reaction temperature of 350-450° C. to produce a decontaminated plastic derived oil and a used decontamination catalyst. The decontamination catalyst includes from 5-40 wt. % red mud particles, from 20-60 wt. % matrix material, and from 10-30 wt. % binder, per unit weight of the decontamination catalyst. Contacting the plastic derived oil stream with the decontamination catalyst at the reaction conditions causes halogen-containing compounds to react to form hydrocarbons and hydrogen halides, which further react with the red mud particles to produce metal halides on surfaces of the red mud particles. The decontaminated plastic derived oil has a concentration of the halogen-containing compounds less than a concentration of the halogen-containing compounds in the plastic derived oil stream.

The invention belongs to the technical field of anti-counterfeiting optical materials and application thereof, and particularly relates to a double-ligand modified and water stimulus responsive perovskite fiber membrane as well as a preparation method and application thereof. The preparation method comprises the following steps: firstly dissolving metal halide salt BX2 and AX powder in a polar solvent to form a perovskite ABX3 precursor solution, then adding a cyclodextrin cyclic supramolecule and long-chain fatty amine double-ligand system into the obtained precursor solution, and then fully mixing the obtained mixed solution with a high-molecular polymer solution to prepare a spinning solution suitable for electrostatic spinning. And finally, preparing the large-area reversible intelligent fluorescent fiber membrane with the water stimulus response through an electrostatic spinning technology. The water stimulus response intelligent fluorescent fiber membrane based on the perovskite nanocrystals can be applied to the anti-counterfeiting field, such as single information encryption, dual information encryption, anti-counterfeiting labels and high-resolution anti-counterfeiting, is especially suitable for anti-counterfeiting in an underwater environment, and has a wide application prospect.

The invention discloses an organic-inorganic hybrid zero-dimensional metal halide perovskite near-infrared luminescent material as well as a preparation method and application thereof. The chemical general formula of the organic-inorganic hybrid zero-dimensional metal halide perovskite near-infrared luminescent material is (4-Mtp) 2Zn (1-x) Br4: xSb < 3 + >, wherein 4-Mtp is 4-mercaptopyridine, and x is greater than or equal to 0 and less than or equal to 0.2; according to the metal halide near-infrared luminescent material, Sb ions are used for replacing near-infrared luminescence of traditional Cr ions, and the metal halide near-infrared luminescent material can be effectively excited by light within the wavelength range of 325-425 nm to emit near-infrared light with the peak value within the range of 745 nm; as Sb is used as an activating agent, the metal halide calcium near-infrared luminescent material is harmless to the environment and organisms, meanwhile, the metal halide calcium near-infrared luminescent material can be applied to the fields of biological nondestructive testing, long-wave communication, medical treatment, national safety, near-infrared LEDs and the like, the environmental pollution degree is reduced, and the metal halide calcium near-infrared luminescent material has wide application prospects.

Embodiments include a method of forming a contact structure on a semiconductor substrate. The method including selectively depositing a metal silicide layer over a contact formed within a cavity of a substrate and a bottom surface of the cavity using a selective deposition process, including forming a residual layer on a surface of a dielectric layer forming sidewalls of the cavity, wherein a thickness of the metal silicide layer deposited over the contact is greater than a thickness of the residual layer, removing at least a portion of the residual layer formed on the dielectric layer using an etching process that comprises exposing the metal selectively deposited layer to a metal halide containing precursor, and selectively depositing a metal fill over the metal silicide layer remaining over the contact after removing the at least the portion of the residual layer using a selective metal fill process.

Techniques disclosed herein relate to sol-gel materials that include at least one metal halide precursor and at least one alcohol. After being annealed, the metal in the metal halide is in at least two different oxidation states, both of which are stable and transparent to visible light. By producing a mixture of the same metal in multiple oxidation states that are all transparent to visible light, an amorphous state of the sol-gel material without any noticeable domain formation that would otherwise distribute stress locally and lead to voiding inside nano-gratings to be overcoated is obtained. Highly condensed states of the sol-gel have refractive index values in the 1.7-2.2 range, without sacrificing recessed-feature fill.

The invention belongs to the technical field of two-dimensional film material growth, and discloses a 2H-phase semiconductor platinum disulfide single crystal and a preparation method thereof. The method comprises the following steps: dropwise adding a metal halide aqueous solution into a Pt-based compound, mixing, heating and drying to obtain a Pt source mixture; reversely buckling the pretreated growth substrate above the Pt source mixture, and placing the growth substrate in a high-temperature area in the quartz tube; sulfur powder is placed in a low-temperature area inside an upstream quartz tube, in a mixed atmosphere, S steam volatilized by heating of the sulfur powder is diffused to a high-temperature area of a tube furnace and chemically reacts with Pt steam generated by volatilization of a Pt source mixture in the high-temperature area, and 2H-phase PtS2 single crystals are deposited on the lower surface of a growth substrate; or placing the ZnS powder in the high-temperature area, in the inert gas atmosphere, enabling S vapor decomposed from the ZnS powder to chemically react with Pt vapor generated by volatilization of the Pt source mixture, and depositing on the lower surface of the growth substrate to generate the 2H-phase PtS2 single crystal.

A method of obtaining a purified rare earth metal deposit from a rare earth metal halide salt, by: (i) producing a rare earth metal borohydride salt by the following reaction:n·ABH4+m·(RE)X3→RE(BH4)3+n·AXwherein the variables are defined as follows: A is an alkali metal cation; RE represents one or more rare earth metal cations; X represents a halide selected from chloride, bromide, and iodide; n is the molar amount of ABH4; and m is the molar amount of (RE)X3; wherein the ratio of n:m is 3:1 to 5:1; (ii) mixing RE(BH4)3 and AX with a halogen-free organic solvent to form a solution containing the RE(BH4)3 salt dissolved therein and with AX undissolved and precipitated; and (iii) contacting the solution from step (ii) with an anode and cathode in electrical communication, and electrically charging the anode and cathode to electroplate the rare earth metal onto the cathode.