8484 results about "Palladium" patented technology

A process for the selective production of ethanol by vapor phase reaction of acetic acid over a hydrogenating catalyst composition to form ethanol is disclosed and claimed. In an embodiment of this invention reaction of acetic acid and hydrogen over either cobalt and palladium supported on graphite or cobalt and platinum supported on silica selectively produces ethanol in a vapor phase at a temperature of about 250° C.

A method with three embodiments of manufacturing metal lines and solder bumps using electroless deposition techniques. The first embodiment uses a PdSix seed layer 50 for electroless deposition. The PdSix layer 50 does not require activation. A metal line is formed on a barrier layer 20 and an adhesion layer 30. A Palladium silicide seed layer 50 is then formed and patterned. Ni, Pd or Cu is electroless deposited over the Palladium silicide layer 50 to form a metal line. The second embodiment selectively electrolessly deposits metal 140 over an Adhesion layer 130 composed of Poly Si, Al, or Ti. A photoresist pattern 132 is formed over the adhesion layer. A metal layer 140 of Cu or Ni is electrolessly deposited over the adhesion layer. The photoresist layer 132 is removed and the exposed portion of the adhesion layer 130 and the underlying barrier metal layer 120 are etched thereby forming a metal line. The third embodiment electroless deposits metal over a metal barrier layer that is roughen by chemical mechanical polishing. A solder bump is formed using an electroless deposition of Cu or Ni by: depositing an Al layer 220 and a barrier metal layer 230 over a substrate 10. The barrier layer 230 is polished and activated. Next, the aluminum layer 220 and the barrier metal layer 230 are patterned. A metal layer 240 is electroless deposited. Next a solder bump 250 is formed over the electroless metal layer 240.

A method of forming a metal cap over a conductive interconnect in a chalcogenide-based memory device is provided and includes, forming a layer of a first conductive material over a substrate, depositing an insulating layer over the first conductive material and the substrate, forming an opening in the insulating layer to expose at least a portion of the first conductive material, depositing a second conductive material over the insulating layer and within the opening, removing portions of the second conductive material to form a conductive area within the opening, recessing the conductive area within the opening to a level below an upper surface of the insulating layer, forming a cap of a third conductive material over the recessed conductive area within the opening, the third conductive material selected from the group consisting of cobalt, silver, gold, copper, nickel, palladium, platinum, and alloys thereof, depositing a stack of a chalcogenide based memory cell material over the cap, and depositing a conductive material over the chalcogenide stack.

In one embodiment, a method for depositing a material on a substrate is provided which includes positioning a substrate containing a contact within a process chamber, exposing the substrate to at least one pretreatment step and depositing a fill the contact vias by an electroless deposition process. The pretreatment step contains multiple processes for exposing the substrate to a wet-clean solution, a hydrogen fluoride solution, a tungstate solution, a palladium activation solution, an acidic rinse solution, a complexing agent solution or combinations thereof. Generally, the HARC via contains a tungsten oxide surface and the shallow contact via may contain a tungsten silicide surface. In some example, the substrate is pretreated such that both vias are filled at substantially the same time by a nickel-containing material through an electroless deposition process.

A method for preparation of alcohols by catalytic hydrogenation of carbonyl compounds with hydrogen or hydrogen-containing gases in the presence of a hydrogenation catalyst of Raney type, where the catalyst is used in the form of hollow bodies, Preferred as catalytically active components are nickel, cobalt, copper, iron, platinum, palladium or ruthenium.

The invention relates to a catalyst for dehydrogenating propane to prepare propone, which uses thermal-resistant oxide as carrier, uses palladium-group metal as main catalyst, uses IV A group metal and rare-earth metal as agents, uses halogen as modifier, and uses inorganic oxide with high temperature resistance as adhesive. The inventive catalyst under high temperature and low pressure has higher propane transfer rate, propone selectivity and reaction stability. And the preparation comprises that at 60-100Deg. C, immerging thermal-resistant oxide with rare-earth metal water solution for 2-10h, at 60-180Deg. C baking for 2-10h, at 400-600Deg. C baking for 3-10h, immerging said carrier and the water solution which contains palladium metal and IVA metal at 60-100Deg. C for 2-10h, and baking for 2-10h at 60-180Deg. C, adding adhesive, protruding agent and acid gel solvent, protruding and shaping, baking for 2-10h at 60-180Deg. C, activating for 3-10h at 400-600Deg. C, and reducing for 2-10h in hydrogen flow at 400-600Deg. C.

An implantable medical device includes a structural body made from a superelastic material and includes one or more marker holders integrally formed on the structural body. Each marker holder is designed to hold a radiopaque marker which has a level of radiopacity greater than the superelastic material. The radiopaque marker can be made from a nickel-titanium alloy which includes a ternary element. The ternary element can be selected from the group of elements consisting of iridium, platinum, gold, rhenium, tungsten, palladium, rhodium, tantalum, silver, ruthenium, and hafnium. In one form, the marker holder includes a pair of projecting fingers connected together at a notched region to cooperatively create a particular-shaped opening. This opening, in turn, is adapted to receive a similarly shaped portion formed on the radiopaque marker. In one form, the radiopaque marker includes an inner core which is partially, or completely, encased by an outer layer. This inner core can be made from a highly radiopaque material while the outer layer is formed from a material that is easier to weld to the marker.

A process for selective formation of ethanol from acetic acid by hydrogenating acetic acid in the presence of first metal, a silicaceous support, and at least one support modifier. Preferably, the first metal is selected from the group consisting of copper, iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium, platinum, titanium, zinc, chromium, rhenium, molybdenum, and tungsten. In addition the catalyst may comprise a second metal preferably selected from the group consisting of copper, molybdenum, tin, chromium, iron, cobalt, vanadium, tungsten, palladium, platinum, lanthanum, cerium, manganese, ruthenium, rhenium, gold, and nickel.

The invention relates to a palladium-silver bimetallic hydrogenation catalyst, a carrier of which mainly contains Al2O3 and which is characterized by comprising, based on 100% of the catalyst weight, 0.01-0.4% of Pd, 0.02-0.2% of Ag, and has a specific surface area of 1-100m<2>/g. The catalyst is obtained through three steps of: first, preparing a functionalized-high-molecular / Al2O3 precursor, then preparing a Pd-Ag-high-molecular / Al2O3 precursor, and lastly roasting the precursors at 380-550 DEG C for 2-6h. The preparation method overcomes the influences of dipping liquid surface tensionand solvation effect on palladium-silver disperseness, and the prepared catalyst has excellent selectivity. The catalyst of the invention can be applied to selective hydrogenation process of fractions such as C2 and C3, and has a good hydrogenation activity, excellent selectivity and good hydrogenation stability.

The invention provides a high selectivity catalyst used for catalyzing and completely oxidizing formaldehyde with low concentration at room temperature. The catalyst can catalyze formaldehyde completely so as to lead the formaldehyde to be converted into carbon dioxide and water at room temperature. In addition, the conversion rate of formaldehyde remains 100% within a long period of time, without complex auxiliary facilities such as light source, a heating oven and the like, and external conditions. The catalyst comprises three parts which are inorganic oxide carrier, noble metal component and auxiliary ingredient. Porous inorganic oxide carrier is one of cerium dioxide, zirconium dioxide, titanium dioxide, aluminium sesquioxide, tin dioxide, silicon dioxide, lanthanum sesquioxide, magnesium oxide and zinc oxide or the mixture thereof or composite oxide thereof, zeolite, sepiolite and porous carbon materials. The noble metal component of the catalyst is at least one of platinum, rhodium, palladium, gold and silver. The auxiliary ingredient is at least one of the alkali metals of lithium, sodium, kalium, rubidium and cesium. The loading of the noble metal component used in the catalyst of the invention is 0.1 to 10% according to weight converter of metal elements and the selective preference is 0.3 to 2%. The loading of the auxiliary ingredient is 0.2 to 30% according to weight converter of metal elements and the selective preference is 1 to 10%. When the loading of the auxiliary ingredient is lower than 0.2% or higher than 30%, the activity of the catalyst for catalyzing and oxidizing formaldehyde at room temperature is decreased remarkably.

Disclosed is a catalyst. The catalyst comprises palladium, gold, and a support comprising titanium dioxide and tungsten trioxide. The support preferably comprises from 75 wt % to 99 wt % of titanium dioxide and from 1 wt % to 25 wt % of tungsten trioxide. A method for preparing the catalyst is also disclosed. The method comprises impregnating the support with a palladium compound and a gold compound, calcining the impregnated support, and then reducing the calcined support. Further disclosed is a method for preparing vinyl acetate with the catalyst. The catalyst exhibits improved catalytic activity and selectivity.

A lead frame for a semiconductor device, made of a copper alloy, capable of preventing the creation of delamination between encapsuling resin and attributable to a lead frame without sacrificing the wire bondability and, a process for producing the lead frame and a semiconductor device using the lead frame. According to the present invention, (1) there is provided a lead frame for a plastic molded type semiconductor device, made of a copper alloy material partially plated with at least one noble metal, for wire bonding or die bonding purposes, selected from silver, gold, and palladium, wherein the whole area or a predetermined area of the surface of the copper at least on its side to be contacted with a encapsuling resin has a thin noble metal plating of at least one member selected from silver, gold, platinum, and palladium. (2) A copper strike plating is provided as a primer plating for the partial noble plating, a copper plating is provided on the thin noble metal plating, and the partial noble metal plating is provided on the copper plating in its predetermined area. (3) A die pad for mounting a semiconductor chip is provided, a partial silver plating is provided, and a zinc flash plating and a copper strike plating are provided in that order at least one on the surface of copper in the back surface of the die pad remote from the surface on which the semiconductor chip is mounted.

A method is provided for removing water, carbon monoxide and carbon dioxide out of a gas, such as air, by passing the gas through a packed column so that the gas sequentially contacts a catalyst consisting of platinum or palladium and at least one member selected from the group consisting of iron, cobalt, nickel, manganese, copper, chromium, tin, lead and cerium wherein the catalyst is supported on alumina containing substantially no pores having pore diameters of 110 Angstroms or less under conditions which oxidize the carbon monoxide in the gas into carbon dioxide; an adsorbent selected from the group consisting of silica gel, activated alumina, zeolite and combinations thereof under conditions in which water is adsorbed and removed from the gas and an adsorbent selected from the group consisting of calcium ion exchanged A zeolite; calcium ion exchanged X zeolite; sodium ion exchanged X zeolite and mixtures thereof under conditions which carbon dioxide is adsorbed and removed from the gas. The gas may also be subjected to a catalyst/adsorbent in the packed column to effect oxidation and removal of hydrogen in the gas.

The invention comprises a process of preparing a non-conductive substrate for subsequent metalization. The process replaces the traditional chromic acid etching step with an etching solution comprising a permanganate and a mineral acid. The process also includes a novel activation solution comprising a palladium salt and an amine complexor. The new process of the invention is more environmentally friendly than the traditional chromic acid etching solutions but achieves a comparable result on most non-conductive substrates.