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3962 results about "Palladium" patented technology

Palladium is a chemical element with the symbol Pd and atomic number 46. It is a rare and lustrous silvery-white metal discovered in 1803 by William Hyde Wollaston. He named it after the asteroid Pallas, which was itself named after the epithet of the Greek goddess Athena, acquired by her when she slew Pallas. Palladium, platinum, rhodium, ruthenium, iridium and osmium form a group of elements referred to as the platinum group metals (PGMs). These have similar chemical properties, but palladium has the lowest melting point and is the least dense of them.

Method of electroless plating copper on nitride barrier

A method with three embodiments of manufacturing metal lines and solder bumps using electroless deposition techniques. The first embodiment uses a PdSix seed layer 50 for electroless deposition. The PdSix layer 50 does not require activation. A metal line is formed on a barrier layer 20 and an adhesion layer 30. A Palladium silicide seed layer 50 is then formed and patterned. Ni, Pd or Cu is electroless deposited over the Palladium silicide layer 50 to form a metal line. The second embodiment selectively electrolessly deposits metal 140 over an Adhesion layer 130 composed of Poly Si, Al, or Ti. A photoresist pattern 132 is formed over the adhesion layer. A metal layer 140 of Cu or Ni is electrolessly deposited over the adhesion layer. The photoresist layer 132 is removed and the exposed portion of the adhesion layer 130 and the underlying barrier metal layer 120 are etched thereby forming a metal line. The third embodiment electroless deposits metal over a metal barrier layer that is roughen by chemical mechanical polishing. A solder bump is formed using an electroless deposition of Cu or Ni by: depositing an Al layer 220 and a barrier metal layer 230 over a substrate 10. The barrier layer 230 is polished and activated. Next, the aluminum layer 220 and the barrier metal layer 230 are patterned. A metal layer 240 is electroless deposited. Next a solder bump 250 is formed over the electroless metal layer 240.

Catalyst for complete oxidation of formaldehyde at room temperature

The invention provides a high selectivity catalyst used for catalyzing and completely oxidizing formaldehyde with low concentration at room temperature. The catalyst can catalyze formaldehyde completely so as to lead the formaldehyde to be converted into carbon dioxide and water at room temperature. In addition, the conversion rate of formaldehyde remains 100% within a long period of time, without complex auxiliary facilities such as light source, a heating oven and the like, and external conditions. The catalyst comprises three parts which are inorganic oxide carrier, noble metal component and auxiliary ingredient. Porous inorganic oxide carrier is one of cerium dioxide, zirconium dioxide, titanium dioxide, aluminium sesquioxide, tin dioxide, silicon dioxide, lanthanum sesquioxide, magnesium oxide and zinc oxide or the mixture thereof or composite oxide thereof, zeolite, sepiolite and porous carbon materials. The noble metal component of the catalyst is at least one of platinum, rhodium, palladium, gold and silver. The auxiliary ingredient is at least one of the alkali metals of lithium, sodium, kalium, rubidium and cesium. The loading of the noble metal component used in the catalyst of the invention is 0.1 to 10% according to weight converter of metal elements and the selective preference is 0.3 to 2%. The loading of the auxiliary ingredient is 0.2 to 30% according to weight converter of metal elements and the selective preference is 1 to 10%. When the loading of the auxiliary ingredient is lower than 0.2% or higher than 30%, the activity of the catalyst for catalyzing and oxidizing formaldehyde at room temperature is decreased remarkably.

Lead frame, method for partial noble plating of said lead frame and semiconductor device having said lead frame

A lead frame for a semiconductor device, made of a copper alloy, capable of preventing the creation of delamination between encapsuling resin and attributable to a lead frame without sacrificing the wire bondability and, a process for producing the lead frame and a semiconductor device using the lead frame. According to the present invention, (1) there is provided a lead frame for a plastic molded type semiconductor device, made of a copper alloy material partially plated with at least one noble metal, for wire bonding or die bonding purposes, selected from silver, gold, and palladium, wherein the whole area or a predetermined area of the surface of the copper at least on its side to be contacted with a encapsuling resin has a thin noble metal plating of at least one member selected from silver, gold, platinum, and palladium. (2) A copper strike plating is provided as a primer plating for the partial noble plating, a copper plating is provided on the thin noble metal plating, and the partial noble metal plating is provided on the copper plating in its predetermined area. (3) A die pad for mounting a semiconductor chip is provided, a partial silver plating is provided, and a zinc flash plating and a copper strike plating are provided in that order at least one on the surface of copper in the back surface of the die pad remote from the surface on which the semiconductor chip is mounted.

Catalyst for treatment of waste water, and method for treatment of waste water using the catalyst

Disclosed are: a catalyst which can exhibit an excellent catalytic activity and excellent durability for a long period in the wet oxidation treatment of waste water; a wet oxidation treatment method for waste water using the catalyst; and a novel method for treating waste water containing a nitrogenated compound, in which a catalyst to be used has a lower catalytic cost, the waste water containing the nitrogenated compound can be treated at high purification performance, and the high purification performance can be maintained. The catalyst for use in the treatment of waste water comprises an oxide of at least one element selected from the group consisting of iron, titanium, silicon, aluminum, zirconium and cerium as a component (A) and at least one element selected from the group consisting of silver, gold, platinum, palladium, rhodium, ruthenium and iridium as a component (B), wherein at least 70 mass% of the component (B) is present in a region positioned within 1000 [mu]m from the outer surface of the component (A) (i.e., the oxide), the component (B) has an average particle diameter of 0.5 to 20 nm, and the solid acid content in the component (A) (i.e., the oxide) is 0.20 mmol/g or more. The waste water treatment method uses a catalyst (a pre-catalyst) which is placed on an upstream side of the direction of the flow of the waste water and can convert the nitrogenated compound contained in the waste water into ammoniacal nitrogen in the presence of an oxidizing agent at a temperature of not lower than 100 DEG C and lower than 370 DEG C under a pressure at which the waste water can remain in a liquid state and a downstream-side catalyst (a post-catalyst) which is placed downstream of the direction of the flow of the waste water and can treat the waste water containing ammoniacal nitrogen.
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