The invention discloses a method for preparing a single-layer
tungsten diselenide nanoband based on a space confinement strategy. By changing the flow and the
growth time of
hydrogen, effective control on the width and the thickness of a nanoband can be realized. The method comprises the following steps: uniformly spraying
tungsten trioxide powder to one substrate, then covering the substrate by the other substrate, and forming micro reaction space which is of a 'sandwich'-like structure. Growth of a
tungsten diselenide nanoband is carried out by utilizing a constant-pressure
chemical vapor deposition method; physicochemical characteristics of a one-dimensional
transition metal chalcogenide strongly depend on suspension key types on the edge of the one-dimensional
transition metal chalcogenide, metallic properties are displayed by an ultranarrow band, and conversion from the metallic properties to
semiconductor properties can be displayed from the edge to the center of a wider band; the
tungsten diselenide nanoband is widely applied to micro-nano photoelectric devices due to the
special property; industrial production of the
tungsten diselenide nanoband can be realized through an experimental method of the invention.