Preparation method of porous silicon-based tungsten trioxide nanorod composite-structure gas sensor element

A technology of gas sensor and tungsten trioxide, which is applied in the direction of instruments, scientific instruments, measuring devices, etc., can solve the problems of long recovery time and slow response speed, and achieve the effect of easy control and less process conditions

Inactive Publication Date: 2013-12-04
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current traditional porous silicon gas sensor also has shortcomings such as slow response speed and long recovery time, which restrict its further application to a certain extent.

Method used

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  • Preparation method of porous silicon-based tungsten trioxide nanorod composite-structure gas sensor element
  • Preparation method of porous silicon-based tungsten trioxide nanorod composite-structure gas sensor element
  • Preparation method of porous silicon-based tungsten trioxide nanorod composite-structure gas sensor element

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Experimental program
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Effect test

Embodiment 1

[0038] (1) Silicon wafer cleaning

[0039] Cut a 2-inch p-type single-sided polished single crystal silicon wafer with a (100) crystal plane with a resistivity of 10-15Ω·cm and a thickness of 300μm into a rectangular silicon substrate with a size of 2.2cm×0.8cm. Soak in a mixture of concentrated sulfuric acid and hydrogen peroxide at a volume ratio of 3:1 for 40 minutes; then soak in a mixture of hydrofluoric acid and deionized water at a volume ratio of 1:1 for 30 minutes; then separately in acetone and ethanol They were cleaned ultrasonically for 5 minutes and then washed with deionized water.

[0040] (2) Preparation of silicon-based porous silicon

[0041] The porous silicon layer was prepared on the polished surface of the silicon wafer by double-slot electrochemical method. The etching solution used is a mixed solution of hydrofluoric acid and dimethylformamide with a volume ratio of 1:2, and the applied corrosion current density is 64mA / cm 2 , The corrosion time is 8min. Pr...

Embodiment 2

[0051] The difference between this embodiment and embodiment 1 is that the hydrothermal reaction time in step (3) is 6h, and the prepared porous silicon-based tungsten trioxide nanorod gas sensor element has a resistance to 1ppm NO at room temperature. 2 The gas sensitivity is 1.2.

Embodiment 3

[0053] The difference between this embodiment and embodiment 1 is that the hydrothermal reaction time in step (3) is 9h, and the prepared porous silicon-based tungsten trioxide nanorod gas sensor element has a resistance to 1ppm NO at room temperature. 2 The gas sensitivity is 1.3.

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Abstract

The invention discloses a preparation method of a porous silicon-based tungsten trioxide nanorod composite-structure gas sensor element. A porous silicon layer is prepared on a polished surface of a P-type single-side-polished monocrystalline wafer by double-channel electrochemical corrosion; tungsten oxide nanorods are grown in situ on porous silicon by hydrothermal process, so that composite-structure porous silicon-based tungsten trioxide nanorods are obtained; two platinum electrodes are deposited on the surface of the wafer by magnetron sputtering. The novel porous silicon-based tungsten trioxide nanorod composite-structure gas sensor element which has excellent gas-sensitiveness features, such as simplicity in preparation process, ease of control, capability of detecting nitride oxide gas at the room temperature and high flexibility, is provided.

Description

Technical field [0001] The invention relates to a nitrogen oxide gas sensor, in particular to a new type of porous silicon-based tungsten trioxide nanorod composite structure gas sensor element. Background technique [0002] With the rapid development of modern industry, it has also continuously brought serious pollution to the ecological environment and caused great harm to human health. Nitrogen oxides (NO x ) As a toxic and harmful gas, it is the main cause of acid rain and photochemical smog. Although the widely studied semiconductor metal oxide gas-sensitive materials x It has good sensitivity performance, but there is a problem of high operating temperature (far higher than room temperature), which adds complexity and instability to the development of sensor technologies that realize microminiaturization, integration, and low power consumption. At present, realizing the room temperature detection of low-concentration nitrogen oxide gas is still a very challenging subject. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00
Inventor 胡明武雅乔韦晓莹马双云杜明月
Owner TIANJIN UNIV
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