69946 results about "Hydrogen" patented technology

A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.

A hemostatic composition for stopping or decreasing blood flow from an open wound or medical or surgical procedure. Compositions of the invention comprise a mixture of a cationic polymer and a cation exchange material. In one embodiment, the composition comprises a mixture: (1) a high molecular weight copolymer of diallyl dimethyl ammonium chloride (DADMAC) and acrylamide [DADMAC copolymer], and (2) the hydrogen form of a crosslinked, sulfonated polystyrene (hydrogen resin). In an exemplified embodiment, a composition of the invention comprises the mixture of DADMAC copolymer and hydrogen resin provided in a dry powdered form. The compositions of the invention may be applied directly to a wound or treatment site, or they may be incorporated into a wound dressing, such as a bandage. The seal formed at a wound or treatment site treated with the present invention is adhesive and exhibits considerable toughness.

An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON / OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.

A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack on the pre-treated surface and providing a flow of NH3 in a process zone surrounding the wafer. Alternately, the method includes pre-treating the HF-last surface with NH3, forming the stack after the pre-treating, and providing a flow of N2 in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming. The pre-treating includes providing an inert gas flow in a process zone surrounding the HF-last surface, reacting hydrogen with an oxidizer in the process zone for a very short duration, and providing an inert gas flew in the process zone after the reacting.

A process for the selective production of ethanol by vapor phase reaction of acetic acid over a hydrogenating catalyst composition to form ethanol is disclosed and claimed. In an embodiment of this invention reaction of acetic acid and hydrogen over a platinum and tin supported on silica, graphite, calcium silicate or silica-alumina selectively produces ethanol in a vapor phase at a temperature of about 250° C.

As a novel substance having a novel skeleton, an organometallic complex having high emission efficiency and improved color purity is provided. The color purity is improved by reducing the half width of an emission spectrum. The organometallic complex is represented by General Formula (G1). In General Formula (G1), at least one of R1 to R4 represents a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms, and the others each independently represent hydrogen or a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms. Note that the case where all of R1 to R4 represent alkyl groups each having 1 carbon atom is excluded. Further, R5 to R9 each independently represent hydrogen or a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms.

A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.

A composite, layered, integrated circuit formed by bonding of insulator layers on wafers provides for combination of otherwise incompatible technologies such as trench capacitor DRAM arrays and high performance, low power, low voltage silicon on insulator (SOI) switching transistors and short signal propagation paths between devices formed on respective wafer layers of a chip. In preferred embodiments, an SOI wafer is formed by hydrophilic bonding of a wafer over an integrated circuit device and then cleaving a layer of the second wafer away using implanted hydrogen and low temperature heat treatment. Further wafers of various structures and compositions may be bonded thereover and connections between circuit elements and connection pads in respective wafers made using short vias that provide fast signal propagation as well as providing more numerous connections than can be provided on chip edges.

A process for selective formation of ethylene from acetic acid includes contacting a feed stream containing acetic acid and hydrogen at an elevated temperature with a first catalytic composition including a suitable hydrogenating catalyst in a first reaction zone to form an intermediate mixture including ethanol and ethyl acetate; and subsequently reacting the intermediate mixture over a suitable dehydrating and / or cracking catalyst in a second reaction zone to form ethylene. Selectivities of ethylene of over 80% are achieved.

A method of forming a film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.