1098 results about "Deuterium" patented technology

The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.

Provided is an organic thin film light emitting element which has achieved all of improved luminous efficiency, improved driving voltage and improved durability life. Specifically provided is a light emitting element which comprises a hole transport layer and an electron transport layer between a positive electrode and a negative electrode and emits light by means of electrical energy. The light emitting element is characterized in that: the hole transport layer of the light emitting element contains a compound represented by general formula (1); the electron transport layer contains a donor compound; and the donor compound is an alkali metal, an inorganic salt containing an alkali metal, a complex of an alkali metal and an organic substance, an alkaline earth metal, an inorganic salt containing an alkaline earth metal, or a complex of an alkaline earth metal and an organic substance. (In the formula, R¹-R²⁰ each represents one group selected from the group consisting of hydrogen, deuterium, an alkyl group, a cycloalkyl group, an amino group, an aryl group, a heterocyclic group, a heteroaryl group, an alkenyl group, a cycloalkenyl group, an alkynyl group, analkoxy group, an alkylthio group, an arylether group, an arylthioether group, a halogen, a cyano group, a —P(═O)R²⁴R²⁵ group and a silyl group; R²⁴ and R²⁵ each represents an aryl group or a heteroaryl group; and these substituents may be further substituted, or adjacent two substituents may combine together to form a ring. Meanwhile, R²¹-R²³ may be the same or different and each represents one group selected from the group consisting of an alkyl group, a cycloalkyl group, an aryl group and a heteroaryl group; and these substituents maybe further substituted.)

What has been created is a plurality and a variety of processes and a variety of devices correspondingly supportive to each process, wherein, a new partnership between; (1) a heat absorbing radiator compressed air pipes/tubes and (2) a gas turbine engine or a reciprocating piston engine,—is used to recapture and reconvert the, otherwise wasted, heat energies expelled by engines, by factories, by smelting plants, by distillation plants, by chillers/coolers/freezers, by cooking ovens, by lamps/stoves, by trash burners, and the heat energies created by the solar heat on the desert/ocean water,—into electric power and finally into hydrogen-deuterium fuel,—by having the engine's tailpipes submerged in cold compressed air inside the heat absorbing radiator pipes in reverse air flow, to further drive and re-drive the same engine; wherein, in order to capture fusion heat energy the hydrogen bomb is detonated in the deep ocean to catch the flames by the water and the hot water is used to energize the compressed air inside the heat absorbing radiator pipes; wherein, in order to produce fusion energy, an abundant electric arc is passed across liquid deuterium or across gaseous deuterium by the electro-plasma torch and sparkplug in the internal combustion engine, and by detonating a dynamite inside a liquid deuterium; wherein diamond is produced by placing carbon inside the hydrogen bomb; and wherein, deuterium fusion flame is used first in smelting glass to large sizes before running an engine.

There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×10²⁰ cm⁻³ or more to 1×10²² cm⁻³ or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (O_EX) and hydrogen in the amorphous oxide semiconductor being 1×10¹⁸ cm⁻³ or less.

An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.

An organic electroluminescent device is provided and includes: a pair of electrodes; and at least one organic layer between the pair of electrodes, the at least one organic layer including a light-emitting layer. At least one of the at least one organic layers contains an iridium complex having a 5-membered heterocyclic structure consisting of a carbon atom and a nitrogen atom, and a deuterium atom on an SP2 carbon atom in the iridium complex.

A method for producing ²²⁹Th includes the steps of providing ²²⁶Ra as a target material, and bombarding the target material with alpha particles, helium-3, or neutrons to form ²²⁹Th. When neutrons are used, the neutrons preferably include an epithermal neutron flux of at least 1×10¹³ n s⁻¹·cm⁻². ²²⁸Ra can also be bombarded with thermal and/or energetic neutrons to result in a neutron capture reaction to form ²²⁹Th. Using ²³⁰Th as a target material, ²²⁹Th can be formed using neutron, gamma ray, proton or deuteron bombardment.

Provided are methods and devices for compression of a spheromak plasma (e.g., deuterium-trirtium (D-T)-derived) in a magnetic well configured within a plasma combustion chamber using an induction coil axially adjacent to the plasma, wherein a moveable member (e.g., piston, cam and follower) drives the induction coil toward the plasma, pushing the plasma via magnetic pressure into the magnetic well and compressing the plasma substantially adiabatically (e.g., coil motion is well below the plasma sound speed). The compression quickly increases both plasma density and temperature past the point of ignition, and after plasma burn, the coil is backed-off to allow the plasma to re-expand, providing for refueling and repetition of the compression cycle. Additionally provided are spaced annular plasma formation electrodes, suitably configured for generating and injecting magnetized plasma into a plasma combustion chamber. Preferably, spaced annular plasma formation electrodes are used in combination with moveable compression members as disclosed herein.

The present disclosure provides a nitrogen-containing heterocyclic compound having a general formula (I) and an organic photoelectric apparatus thereof. The general formula (I) is:

wherein A₁, A₂, A₃, A₄, A₅, A₆, A₇, A₈, A₉, and A₁₀ are independently selected from a hydrogen atom, a nitrile group and a function group having a general formula (II), and A₁, A₂, A₃, A₄, A₅, A₆, A₇, A₈, A₉, and A₁₀ include at least one nitrile group and at least one function group having the general formula (II),

the general formula (II) being:

wherein R₁, R₂, R₃, R₄, R₅, R₆, R₇, and R₈ are independently selected from hydrogen atoms, deuterium atoms, C_6-30 aromatic group and C_2-30 heterocyclic aromatic group.

The invention discloses a liquid metal cooling reactor experimental system capable of realizing critical and subcritical running test. The liquid metal cooling reactor experimental system consists of a safety vessel (1), a main vessel (2), a reactor inner supporting structure (3), a reactor core (4), a central measuring column (5), a main heat exchanger (6), a reloading mechanism (7), a reactor top cover (8), a control bar drive mechanism (9) and a neutron source (10); when the critical running test is performed, the neutron source (10) adopts a californium-252 neutron source or a Be-Am neutron source; when the subcritical running test is performed, the neutron source (10) adopts a spallation neutron source or a deuterium tritium neutron source, an isotopic neutron source and a fuel component in the middle part of the reactor core are replaced by an accelerator neutron source according to the real requirement of the spallation neutron source, and the reactor can have the subcritical running test. The reactor experimental system is naturally and circularly cooled by adopting liquid lead-bismuth or lead, so that the usability of the reactor can be improved, the experimental cost can be reduced, and the multifunctional reactor experimental system characteristics can be achieved.

A method for processing a semiconductor topography is provided, which includes diffusing deuterium across one or more interfaces of a silicon-oxide-nitride-oxide-silicon (SONOS) structure. In particular, the method may include diffusing deuterium across one or more interfaces of a SONOS structure during a reflow of a dielectric layer spaced above the SONOS structure. In some embodiments, the method may include forming a deutereated nitride layer above the SONOS structure prior to the reflow process. In addition or alternatively, the method may include forming a deutereated nitride layer within the SONOS structure prior to the reflow process. In some cases, the method may further include annealing the SONOS structure with a deutereated substance prior to forming the deutereated nitride layer. In either embodiment, a SONOS structure may be formed which includes deuterium arranged within an interface of a silicon layer and an oxide layer of the structure.

The invention provides a rapid nondestructive lemon and fruit maturity testing device and a testing system establishment method. The testing system comprises a framework, an image acquisition chamber, an imaging spectrometer, a mobile bracket, a conveyor belt, a feed device, a grading device, a control box, a keyboard, a display, a scram button and a controller cable, wherein the image acquisition chamber is arranged above the conveyor belt in the framework and is internally provided with a halogen lamp, a deuterium lamp and a limit sensor; the mobile bracket is movably connected onto an upright of the framework and can be vertically adjusted along the uptight; and the imaging spectrometer is fixed on a cross beam of the mobile bracket. The system and the establishment method can rapidly test the maturity of lemons and fruits, so that classified processing of the lemons and fruits can be conducted, the production efficiency and the fruit quality are improved, and the income is increased.

A cylindrical neutron generator is formed with a coaxial RF-driven plasma ion source and target. A deuterium (or deuterium and tritium) plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical neutron generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which contain many slots. The plasma generator emanates ions radially over 360° and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired. The plasma generator may be in the center and the neutron target on the outside, or the plasma generator may be on the outside and the target on the inside. In a nested configuration, several concentric targets and plasma generating regions are nested to increase the neutron flux.

A plant and process for efficient production of low deuterium water from seawater. The plant includes a solar still with a black pan for collecting solar heat, that vaporizes portions of the seawater and a porous sloped membrane positioned over the black pan to collect and condense the vapor and to direct the condensate via gravity to a condensate tank. The condensate water is separated into its atomic components, hydrogen and oxygen, in an electralizer; then the hydrogen and oxygen are combined in a reactor to produce heat and low deuterium water. In preferred embodiments the reactor is a fuel cell which in addition to the heat and water also produces electricity. At least a portion of the heat produced in the reactor is used in the solar still to assist in the vaporization of the seawater and to greatly increase the efficiency of the still.

Provided is a novel method of and system for recovering and recirculating a deuterium-containing gas. According to the inventive method, a deuterium-containing feed gas is introduced into a chamber. An exhaust gas containing deuterium is removed from the chamber. The deuterium concentration of the exhaust gas is adjusted to a predetermined value, thereby producing a concentration-adjusted gas stream. Finally, the concentration-adjusted gas stream is introduced into the chamber as the deuterium-containing feed gas. The invention makes the use of deuterium, for example, in the mass production of semiconductor devices, commercially feasible.

An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed. Raising the photosensor increases the fill factor and the quantum efficiency of the pixel cell. Utilizing hydrogenated amorphous silicon decreases the leakage and barrier problems of conventional photosensors, thereby increasing the quantum efficiency of the pixel cell. Moreover, the doping of the photodiode with inert implants like fluorine or deuterium further decreases leakage of charge carriers and mitigates undesirable hysteresis effects.

The invention concerns radiographic equipment. The equipment includes a source of substantially mono-energetic fast neutrons produced via the deuterium-tritium or deuterium-deuterium fusion reactions, comprising a sealed-tube or similar generator for producing the neutrons. The equipment further includes a source of X-rays or gamma-rays of sufficient energy to substantially penetrate an object to be imaged and a collimating block surrounding the neutron and gamma-ray sources, apart from the provision of one or more slots emitting substantially fan-shaped radiation beams. Further included is a detector array comprising a multiplicity of individual scintillator pixels to receive radiation energy from the sources and convert the received energy into light pulses, the detector array aligned with the fan-shaped beams emitted from the source collimator and collimated to substantially prevent radiation other than that directly transmitted from the sources reaching the array. Conversion means are included for converting the light pulses produced in the scintillators into electrical signals. Conveying means are included for conveying an object between the sources and the detector array. Computing means are included for determining from the electrical signals the attenuation of the neutrons and the X-ray or gamma-ray beams and to generate output representing the mass distribution and composition of the object interposed between the source and detector array. The equipment further includes a display means for displaying images based on the mass distribution and the composition of the object being scanned.

After much experimentation, I have developed, a new, cost-effective, process for commercial-scale production of power by catalytic fusion of D2 gas, under moderate conditions of temperature and pressure. This process can be scaled up to any desired size, and can employ a variety of "hydrogenation" catalysts, both precious metal, and non-precious metal. Briefly, the process comprises absorbing D2 gas in or on the selected catalyst, then bringing the temperature into the range of very roughly 150° to 250° C., and then degassing the catalyst bed under reduced pressure. The process is necessarily run on a cyclic basis, with a multiplicity of catalyst bed entities, with one or more being in the D2-absorption mode, concurrently with one or more being in the heat-generation node.

A structure and method passivates dangling silicon bonds by the introduction of deuterium into a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) by ion implantation. The process of implantation provides precise placement of deuterium at optimum locations within the gate stack to create stable silicon-deuterium bond terminations at the Si—SiO₂ interface within the gate-channel region. The deuterium is encapsulated in the MOSFET by the use of a Silicon Nitride (SiN) barrier mask. The ability of deuterium to passivate dangling silicon bonds is maximized by removing hydrogen present in the MOSFET and by use of an absorption layer to create a deuterium rich region.

The invention provides a [(indole-3-yl)pyrimidine-2-yl]aminophenylpropyl-2-eneamide derivative and its salt, a preparation method of the derivative, and application of the derivative and the salt. The [(indole-3-yl)pyrimidine-2-yl]aminophenylpropyl-2-eneamide derivative has a structure shown in the formula I below. Deuterium-carbon bonds in the derivative enable the derivative to decompose slowly in a human body, a medicament of the derivative has a longer half-life period and a higher concentration in blood, the dosage of the medicament is finally reduced, and toxic and side effects of the medicament are decreased. Experiments show that compared with AZD 9291 mesylates, AZD 929-D9 mesylate of the deuterium-substituted derivative has Cmax which is 1.32 times as high as that of AZD 9291, exposed dose 1.41 times as high as that of AZD 9291, and elimination half-life 1.31 times as long as that of AZD 9291.

A method of forming a semiconductor structure comprises forming an etch-stop layer comprising nitride, on a stack. The stack is on a semiconductor substrate, and the stack comprises (i) a gate layer. The forming is by CVD with a gas comprising a first compound which is Si_xL_2x, and a second compound comprising nitrogen and deuterium, L is an amino group, and X is 1 or 2.