1961results about How to "Improve quantum efficiency" patented technology

Methods and instrumentation for performing charge coupled device (CCD)-based confocal spectroscopy with a laser spot array are provided. The methods and instruments of the invention are useful in any spectroscopic application, including, but not limited to, microscopy and microvolume laser scanning cytometry (MLSC).

The present invention relates to a light-emission-layer material comprising: a novel polycyclic aromatic compound (1) in which a plurality of aromatic rings are linked by a boron atom and a nitrogen atom; and a specific anthracene-based compound (3) that achieves optimum light-emission characteristics in combination with said polycyclic aromatic compound. With this light-emission-layer material having optimum light-emission characteristics, it is possible to provide an excellent organic EL element. Ring A to ring C are an aryl ring or the like, X is a group represented by formula (3-X1), formula (3-X2), or formula (3-X3), and Ar1 to Ar4 are phenyl, a group represented by formula (4), or the like.

An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

Luminescent materials and the use of such materials in anti-counterfeiting, inventory, photovoltaic, and other applications are described herein. In one embodiment, a luminescent material has the formula: [AaBbXxX′x′X″x″][dopants], wherein A is selected from at least one of elements of Group IA; B is selected from at least one of elements of Group VA, elements of Group IB, elements of Group IIB, elements of Group IIIB, elements of Group IVB, and elements of Group VB; X, X′, and X″ are independently selected from at least one of elements of Group VIIB; the dopants include electron acceptors and electron donors; a is in the range of 1 to 9; b is in the range of 1 to 5; and x, x′, and x″ have a sum in the range of 1 to 9. The luminescent material exhibits photoluminescence having: (a) a quantum efficiency of at least 20 percent; (b) a spectral width no greater than 100 nm at Full Width at Half Maximum; and (c) a peak emission wavelength in the near infrared range.

Graded core / shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core / shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

A method of fabricating an apparatus for an enhanced imaging sensor consisting of pixellated micro columnar scintillation film material for x-ray imaging comprising a scintillation substrate and a micro columnar scintillation film material in contact with the scintillation substrate. The micro columnar scintillation film material is formed from a doped scintillator material. According to the invention, the micro columnar scintillation film material is subdivided into arrays of optically independent pixels having interpixel gaps between the optically independent pixels. These optically independent pixels channel detectable light to a detector element thereby reducing optical crosstalk between the pixels providing for an X-ray converter capable of increasing efficiency without the associated loss of spatial resolution. The interpixel gaps are further filled with a dielectric and or reflective material to substantially reduce optical crosstalk and enhance light collection efficiency.

The invention addresses the problem of creating a high-speed, high-efficiency photodetector that is compatible with Si CMOS technology. The structure consists of a Ge absorbing layer on a thin SOI substrate, and utilizes isolation regions, alternating n- and p-type contacts, and low-resistance surface electrodes. The device achieves high bandwidth by utilizing a buried insulating layer to isolate carriers generated in the underlying substrate, high quantum efficiency over a broad spectrum by utilizing a Ge absorbing layer, low voltage operation by utilizing thin a absorbing layer and narrow electrode spacings, and compatibility with CMOS devices by virtue of its planar structure and use of a group IV absorbing material. The method for fabricating the photodetector uses direct growth of Ge on thin SOI or an epitaxial oxide, and subsequent thermal annealing to achieve a high-quality absorbing layer. This method limits the amount of Si available for interdiffusion, thereby allowing the Ge layer to be annealed without causing substantial dilution of the Ge layer by the underlying Si.

This invention relates to imaging device and its related transferring technologies to independent substrate able to attain significant broadband capability covering the wavelengths from ultra-violet (UV) to long-Infrared. More particularly, this invention is related to the broadband image sensor (along with its manufacturing technologies), which can detect the light wavelengths ranges from as low as UV to the wavelengths as high as 20 μm covering the most of the wavelengths using of the single monolithic image sensor on the single wafer. This invention is also related to the integrated circuit and the bonding technologies of the image sensor to standard integrated circuit for multicolor imaging, sensing, and advanced communication. Our innovative approach utilizes surface structure having more than micro-nano-scaled 3-dimensional (3-D) blocks which can provide broad spectral response. Utilizing multiple micro-nano scaled blocks help to increase the absorption spectra more than the material used as the absorption layer. In addition, utilizing the multiple nano-scaled 3-D blocks help to increase the absorption over the wavelength due to the multiple reflections and diffractions inside the 3-D structures. The absorption layers will be designed to achieve the required quantum efficiency and also required speed.

The invention relates to the compounds of formulae (1) to (6) and to organic electroluminescent devices, especially blue-emitting devices, in which these compounds are used as the host material or doping agent in the emitting layer and / or as the hole transport material and / or as the electron transport material.