23results about How to "Improve quantum efficiency" patented technology

This invention discloses a method for fabricating a highly sensitive long-wavelength infrared superconducting single-photon detector. It fully utilizes and amplifies the acoustic mismatch effect between the superconducting thin film and the substrate to achieve phonon localization enhancement on the superconducting nanowires. The effect of this innovative design is to increase the energy utilization rate of long-wavelength infrared photons on the superconducting nanowires, thereby improving the response sensitivity of the superconducting nanowires to long-wavelength infrared photon signals. Compared to existing designs that reduce the cross-sectional size of the superconducting nanowires, create holes beneath the nanowires, or increase the buffer layer, this invention is easier to implement and has higher scalability.

The application discloses a kind of double light metal doped modified carbon nitride photocatalyst and preparation method thereof, comprising the following steps: (1) the pretreatment of precursor, according to certain mass ratio, two metal salts are mixed with carbon and nitrogen-containing organic matter and are uniformly ground;(2) preparation is carried out using high-temperature thermal polycondensation method, and constant temperature calcination is carried out under certain conditions;(3) the sample prepared by calcining is washed, centrifuged and dried to obtain double metal co-doped polymer carbon nitride.The method is simple, low in cost, uniform in morphology and high in catalytic activity.The application uses cheap main group light metal to dope and modify carbon nitride (Na-Mg / CN), and the solar conversion quantum yield of the composite material is high, the selectivity of photocatalytic preparation of hydrogen peroxide (H2O2) is good, the efficiency is high, and it can be applied to the field of artificial photosynthesis to prepare important chemicals.

This invention discloses a spray / spray-enhanced industrial photocatalytic reactor and its method. The reactor includes a light-transmitting and pressure-resistant reaction chamber, a spray / spray unit, a lighting unit, a gas-liquid separation unit, and a pressure control unit. By atomizing the liquid to be reacted into microdroplet clusters and / or forming a thin liquid film, the equivalent optical path of the liquid phase is significantly shortened, improving light penetration and photon utilization. Simultaneously, combined with pressure control structures such as back pressure valves and pressure stabilizing tanks, and gas-liquid separation / demisting structures, controllable pressure and low pressure drop are achieved under continuous operation. The reaction chamber material is not limited to quartz glass, but can also be borosilicate glass, tempered glass, transparent ceramics, or sapphire, etc.; the light source is not limited to LEDs, but can also be xenon lamps, halogen lamps, mercury lamps, lasers, or sunlight simulators, etc. The system can operate in a cyclic or multi-stage series, suitable for the scale-up and integration of various industrial photocatalytic processes.

The invention provides an organic compound and application thereof, the organic compound has a structure shown as a formula I. The organic compound provided by the invention has the properties of multiple resonance molecules and conjugated molecules through design of molecular structures and mutual compounding of the structures, namely, the organic compound has narrow fluorescence emission spectrum, high quantum efficiency and long device life; the compound is applied to the organic electroluminescent device, can be used as a fluorescent doping material of a luminescent layer, and can effectively improve the luminous efficiency and prolong the service life of the organic electroluminescent device, so that the device has higher color purity.

The invention belongs to the field of chemical detection, and discloses a fluorescent probe P1, a preparation method thereof and application of the fluorescent probe P1 in spermidine and viscosity dual-function detection. The structural formula of the fluorescent probe P1 is shown in the specification. The recognition performance of the probe P1 in various common analytes in a DMF-HEPES buffer system is researched through a fluorescence spectrophotometer. Results show that the probe P1 has specific fluorescence recognition performance on spermidine, can overcome interference of other common analytes, and has a wide pH value application range. The probe has relatively good sensitivity on the recognition of spermidine, and the lowest detection limit is 0.213 mu M. In addition, the probe P1 has a good response effect on the viscosity of the solution, is not interfered by the polarity of the solution, and can realize quantitative detection of the viscosity. The results show that the probe P1 has wide application prospects in the fields of food safety, environmental detection and biology.

This invention provides a nitrogen oxide green fluorescent material, its preparation method, and its application. The general chemical formula of the nitrogen oxide green fluorescent material is Ba. 1‑x Eu x LnSiO3N, wherein Ln can be one or more of Sc, Y, La, Gd, or Lu, and Sc is essential, and Sc accounts for >50% (molar ratio) of Ln.

The application belongs to the technical field of nanocrystal material preparation, and particularly relates to a preparation method of organic perovskite nanocrystal and the organic perovskite nanocrystal. The method comprises the steps of obtaining a precursor solution and performing high-temperature vacuum extraction on the precursor solution. The step of obtaining the precursor solution at least comprises: heating and complexing organic precursor salt and a ligand to form an organic salt complex; the structure of the ligand is R1-R-SO3H, wherein R is selected from C6-C18 arylene, R1 is selected from C n H 2n+1 , H, and n is an integer from 1 to 18. The method can completely remove impurities in the synthesis of the organic perovskite nanocrystal during the high-temperature vacuum extraction operation by pre-synthesizing the organic salt complex, which has a higher melting point and binding stability, while avoiding the escape of small organic molecules caused by high-temperature vacuum extraction. The synthesized nanocrystal has adjustable wavelength, uniform size, high quantum efficiency and high stability.

A semiconductor structure and a forming method thereof, the method comprising: providing a substrate, the substrate comprising a photoelectric conversion region; forming a photodetection structure on the top of the substrate of the photoelectric conversion region, the photodetection structure comprising a light absorption layer and a first doped layer in contact with two sides of the light absorption layer, and the first doped layers on the two sides of the light absorption layer are of different doping types; forming a light field limiting layer on the top of the first doped layers on the two sides of the light absorption layer, and the extending direction of the light field limiting layer is the same as that of the first doped layers. The response and bandwidth of the semiconductor structure are improved, and the contradiction between the response and the bandwidth of the semiconductor structure is effectively alleviated.

A quantum dot, an optical component including the quantum dot, an electronic device, and an electronic apparatus are disclosed. According to one aspect, there is provided a quantum dot including: a core including a Group I element, a Group III element, a Group VI element, and gallium (Ga); a first shell including a group I element, a group III element, a group VI element, and gallium (Ga), and covering the core; and a second shell covering the first shell, in which the band gaps of the core, the first shell, and the second shell satisfy the following formula (1) and formula (2): EBSHELL1lt; eBCORE (1); an EBCORElt (electron beam COREt); eBSHELL2 (2) wherein EBCORE is the energy band gap of the core, EBSHELL1 is the energy band gap of the first shell, and EBSHELL2 is the energy band gap of the second shell, and wherein EBCORE is the energy band gap of the core, EBSHELL1 is the energy band gap of the first shell, and EBSHELL2 is the energy band gap of the second shell.

This invention belongs to the field of nanocomposite material preparation and application technology, and discloses a method for preparing and applying a dendritic ternary SrCO3-TiO2 / CdS composite material. First, SrCO3-TiO2 nanoparticles are synthesized using a simple hydrothermal one-pot method with tetrabutyl titanate and Sr(NO3)2 as raw materials. These nanoparticles are then dispersed in deionized water to form a suspension. Finally, a dendritic ternary SrCO3-TiO2 / CdS composite material is prepared using an in-situ hydrothermal growth method. The dendritic ternary SrCO3-TiO2 / CdS composite material prepared by this invention can be used to produce hydrogen peroxide under visible light and simultaneously degrade oxytetracycline. The dendritic ternary SrCO3-TiO2 / CdS composite material prepared by this invention forms a unique dendritic structure by combining SrCO3-TiO2 composite particles with CdS. By utilizing the synergistic effect among the three, the transport and separation of photogenerated electron pairs at the interface are accelerated, and their recombination is effectively inhibited, thereby improving the catalytic activity of the dendritic ternary SrCO3-TiO2 / CdS composite material. It has broad application prospects in the synthesis of green chemicals and water pollution treatment.

The application discloses a zinc-doped blue LED epitaxial structure and a preparation method thereof. The epitaxial structure comprises a substrate, a buffer layer, a non-intentionally doped GaN layer, an n-type GaN layer, a multi-quantum well light-emitting layer and a p-type region arranged in sequence, a first Zn-doped AlGaN composite layer is arranged between the n-type GaN layer and the multi-quantum well light-emitting layer, and a second Zn-doped AlGaN composite layer is arranged between the multi-quantum well light-emitting layer and the p-type region. The first and second Zn-doped AlGaN composite layers are both formed by pausing or reducing the III group source and introducing the Zn source to form a delta-doped interface during the growth of AlGaN, and then continuing to grow an AlGaN cover layer. The double-side Zn-doped structure can adjust the energy band distribution on both sides of the multi-quantum well, suppresses the electron leakage and improves the hole injection, so that the light-emitting efficiency and the light output power are improved.

The invention discloses a PIN junction detector based on an N-type germanium substrate and a preparation method, and relates to the technical field of microelectronics. The detector comprises an N-type Ge substrate; the intrinsic Ge epitaxial layer is positioned on the upper surface of the N-type Ge substrate; the P-type Ge region is positioned in the intrinsic Ge epitaxial layer and is close to the upper surface of the intrinsic Ge epitaxial layer; the first metal electrode and the second metal electrode are located on the upper surface of the P-type Ge region and the lower surface of the N-type Ge substrate respectively. The thin layer intrinsic Ge is epitaxially grown on the heavily doped N-type substrate to serve as the I region of the PIN junction, so that the width of a depletion region is effectively reduced, the dark current of the device is remarkably reduced, meanwhile, the efficient separation effect of the I region on photon-generated carriers is reserved, relatively high responsivity is ensured, optimal balance of low dark current and high responsivity is realized, and the photoelectric conversion efficiency of the device is improved. And the process is compatible with a silicon-based CMOS, and is suitable for low-cost and large-scale photoelectric integration application.

This application belongs to the field of display technology, specifically relating to an optoelectronic device, its fabrication method, and a display apparatus. The optoelectronic device includes a stacked anode, a hole-functional layer, an active layer, and a cathode; wherein an interface layer is further disposed between the hole-functional layer and the active layer, and the material of the interface layer includes a Group 3 metal salt and nanoparticles. This application effectively improves the lifespan and external quantum efficiency of the optoelectronic device by suppressing the accumulation of excess electrons through the interface layer connected to the active layer.

This invention provides a triarylboron-modified fluorescent material, its preparation method, and its applications. The triarylboron-modified fluorescent material is as shown in Compound I. The compound of this invention utilizes the electron-withdrawing ability and high steric hindrance of triarylboron to effectively accelerate the antisystem crossing rate of narrow-band luminescent materials, reducing intermolecular interactions, thereby improving quantum efficiency and suppressing the efficiency roll-off problem of organic electroluminescent devices. Furthermore, due to the typical electron-donating characteristics, strong resonance effect, and rigid molecular structure of this type of molecule, the emission spectrum becomes narrower, thus achieving very high purity green light emission.

The application provides a high-temperature-resistant photoelectric conversion assembly for a radiation detector, comprising a substrate layer, a protective layer and a cathode layer; the substrate layer is a lead fluoride crystal, the lead fluoride crystal has oppositely arranged first and second surfaces, and the first surface is configured as a growth surface, the growth surface comprises a photocathode surface and indium sealing surfaces arranged on both sides of the photocathode surface; the protective layer is a magnesium fluoride film and an aluminum oxide film which are sequentially arranged on the growth surface in a direction away from the growth surface; and the cathode layer is an alkali metal layer which is sequentially arranged on the aluminum oxide film away from the magnesium fluoride film and corresponds to the photocathode surface. The application forms a PbF2-MgF2-Al2O3 protective film layer by arranging magnesium fluoride as an intermediate transition film layer, prevents the reaction between the lead fluoride crystal and the alkali metal, and improves the incident light transmittance of the lead fluoride crystal, so that the overall tube quantum efficiency is improved.

This invention relates to the field of infrared detector technology, specifically to an infrared detector device and its fabrication method. The device employs a PBπBN structure. The epitaxial wafer of the device, along its epitaxial growth direction, includes a substrate, a buffer layer, a lower transition layer, a hole blocking layer, an absorption layer, an electron blocking layer, an upper transition layer, and a P-type metal contact layer. A passivation layer and a micro-coarsening light-trapping structure are provided on the surface. The hole blocking layer is a superlattice structure, and the absorption layer is a ternary / quaternary superlattice structure. This invention suppresses carrier leakage through a double-barrier structure, modulates the bandgap through a superlattice, and reduces leakage current and improves light absorption efficiency through surface treatment. The fabricated device can absorb infrared light in the 1.65~3.5μm mid-wave infrared band, with a peak quantum efficiency exceeding 55% and a peak detection value greater than 1×10⁻⁶. 11 cm·Hz 1 / 2 ·W ‑1 Dark current density less than 5.0 × 10 ‑5 A / cm 2 Suitable for high-performance infrared detection applications.

The invention discloses rare earth doped multi-component optical glass ink, an additive manufacturing method thereof and optical glass. The ink is prepared from a metal salt containing a rare earth metal salt, a precursor compound, deionized water, a photocuring monomer, a photoinitiator and other raw materials through a sol-gel technology, and in-situ uniform doping of rare earth ions on the molecular level is achieved. The ink can be molded into a gel blank with a complex structure through a photocuring 3D printing technology, and then the gel blank is dried, sintered and annealed to finally obtain the high-performance rare earth doped multi-component optical glass. According to the method, the limitation of a traditional high-temperature melting method and an existing second-phase doping additive manufacturing technology is broken through, organic combination of a device with a complex structure, molecular-level uniform doping and low-temperature preparation is achieved, and the method has wide application prospects in the fields of micro lasers, integrated optical devices and the like.

This invention relates to the field of organic electroluminescent materials, specifically to an iridium metal complex, and more particularly to an iridium metal complex for deep red-near-infrared emission and its applications, as well as organic electroluminescent devices using the iridium metal complex of this invention. The iridium metal complex of this invention has the structure shown in formula (1). OLED devices prepared using the iridium metal complex of this invention exhibit higher luminous efficiency and better lifespan, demonstrating promising application prospects.

The invention discloses a photocatalytic material for synchronously removing composite new pollutants in plateau lakes and a preparation method and application of the photocatalytic material, and relates to the technical field of environmental functional materials, the photocatalytic material is a rare earth metal doped silicon dioxide composite material, and the molar ratio of rare earth metal to silicon is 3-15%; the composite new pollutants comprise micro-plastics, antibiotics and dyes. Rare earth doping is carried out on silicon dioxide, the light response range of the material is effectively widened, the separation and migration efficiency of photo-induced electron-hole pairs is remarkably improved, and therefore synchronous and efficient removal of three kinds of new composite pollutants including micro-plastics, antibiotics and dyes in a water body is achieved at the normal temperature and the normal pressure; the prepared 10% La-SiO2 and other rare earth doped silicon dioxide materials show more excellent photocatalytic activity in a plateau strong ultraviolet environment, and have the comprehensive advantages of low raw material cost, environmental friendliness, no need of complex recovery after use and the like.

This invention provides a silicon-based germanium avalanche photodetector, comprising a substrate; an N-type doped silicon layer disposed on the substrate and electrically isolated from it; an intrinsic silicon layer disposed on the side of the N-type doped silicon layer away from the substrate; a P-type doped silicon charge layer disposed on the side of the intrinsic silicon layer away from the substrate; and a P-type doped germanium absorption layer disposed on the side of the P-type doped silicon charge layer away from the substrate. The detector employs a silicon waveguide structure design, allowing optical signals to couple into the P-type doped germanium absorption layer via the silicon layer beneath the P-type doped germanium absorption layer. A distributed Bragg reflector is provided at the detector's output end to reflect any remaining unabsorbed optical signals emitted by the detector. This silicon-based germanium avalanche photodetector achieves low dark current, low voltage, and high speed, thereby improving detector sensitivity and detection performance.

The application relates to the technical field of semiconductor photoelectric devices, and particularly relates to a nanocrystal detection chip capable of perceiving multi-spectrum (covering 300 nm-15 mu m). By adopting a solution processing type nanocrystal thin film, rigid dependence on expensive single crystal infrared epitaxial wafers such as indium gallium arsenide (InGaAs) and indium antimony arsenide (InAsSb) of a traditional infrared detector is effectively broken, a patterned nanocrystal filter layer is prepared on an independent transparent optical substrate, a multi-band spectral modulation array is constructed through multiple photoetchings, and high-precision vertical heterojunction integration is realized with a bottom photoreceptive pixel. By utilizing the band tunable characteristics of nanocrystal materials, the physical band gap limitation of a traditional silicon-based sensor is broken, and full-spectrum photoelectric detection response from ultraviolet, visible light to medium-long wave infrared (300 nm-15 mu m) is realized. The application forms an in-situ physical barrier through a vertical heterojunction integration structure, and at the same time of completing micron-level spectral spectral modulation, reliable physical isolation and chemical protection are provided for the fragile nanocrystal active layer.

The present application relates to the technical field of antifouling functional coating materials, and specifically discloses a composite coating with switchable wettability in response to visible light and a preparation method thereof.The composite coating has an organic-inorganic hybrid multilayer structure, and comprises, from the surface of a substrate outward, a polydimethylsiloxane hydrophobic bottom layer, a ZIF-8 metal organic framework intermediate layer arranged on the surface of the polydimethylsiloxane hydrophobic bottom layer, and a nitrogen-doped titanium dioxide active layer arranged on the surface of the ZIF-8 metal organic framework intermediate layer.The composite coating has the characteristics of efficient response to visible light, reversible switching between superhydrophilicity and oleophobicity, excellent durability, and low-temperature preparation, and can be widely applied to self-cleaning antifouling scenarios to solve the problem of dust deposition, oil stain adhesion and other fouling problems of building exterior walls, photovoltaic panels, vehicle surfaces and other surfaces exposed to atmospheric environments.

The application belongs to the technical field of organic electroluminescent materials, and particularly relates to a thermally activated delayed fluorescence material and an organic electroluminescent device thereof, wherein through precise design of an outer carbazole derivative part deuterium substitution, efficient balance of cost, stability and photoelectric performance is achieved. In terms of photoelectric performance, the outer carbazole part deuterium substitution retains the hole transport characteristics of carbazole, the low vibration frequency of C-D bond inhibits non-radiative transition, and the quantum efficiency is improved. Meanwhile, the cost of the carbazole part deuterium substitution is also lower than that of full deuterium substitution, which is conducive to reducing the production cost.