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1948results about How to "Improve quantum efficiency" patented technology

Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices

Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems. Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.
Owner:YALE UNIV

Composite dielectric grating metal-oxide-semiconductor field effect transistor (MOSFET) based dual-transistor light-sensitive detector and signal reading method thereof

The invention discloses a composite dielectric grating MOSFET based dual-transistor light-sensitive detector. Each of the unit detectors comprises two transistors, wherein the two transistors comprise a photoreceptive transistor and a reading transistor which are used for implementing the photoreceptive function and the reading function respectively, both of the two transistors are formed above a composite dielectric grating MOSFET substrate P-type semiconductor material (1) and are separated through shallow trench isolation (STI), a bottom layer of an insulating dielectric material, a top layer of the insulating dielectric material and a control grid (2) are arranged above the substrate P-type semiconductor material respectively, a photoelectron storage layer (4) is arranged between the two layers of insulating dielectric materials, a source/drain electrode is arranged on the reading transistor to read signals, and the two transistors are connected through the photoelectron storage layer, so that the reading transistor can read photoelectrons which are stored by the photoreceptive transistor in the photoelectron storage layer through sensitization.
Owner:南京威派视半导体技术有限公司

Preparation method of carbon quantum dots with adjustable fluorescence colors

The present invention relates to a preparation method of carbon quantum dots with adjustable fluorescence colors, and belongs to the technical field of nanometer materials. According to method, citric acid or a citrate is adopted as a carbon source, a nitrogen-containing compound is adopted as a nitridation agent, hydrogen peroxide is adopted as an oxidant, a hydrothermal synthesis method is adopted to obtain an aqueous solution of carbon quantum dots emitting blue or green fluorescence under ultraviolet light excitation, reaction conditions are easily controlled, and the method is suitable for scale production. The prepared carbon quantum dots have advantages of adjustable fluorescence color, high yield, high quantum efficiency, good result reproducibility and the like, wherein the product can be directly used for tumor cell labeling and live cell imaging labeling. According to the present invention, only the one reactant is required, the raw materials are easily-available and non-toxic, the production process does not require special protection, the reaction condition is easily controlled, and the obtained carbon quantum dots have advantages of high yield, high quantum efficiency, good result reproducibility and the like; and the method has characteristics of high yield, simple preparation process, low cost, easy scale production and the like.
Owner:UNIVERSITY OF CHINESE ACADEMY OF SCIENCES

Broadband imaging device

This invention relates to imaging device and its related transferring technologies to independent substrate able to attain significant broadband capability covering the wavelengths from ultra-violet (UV) to long-Infrared. More particularly, this invention is related to the broadband image sensor (along with its manufacturing technologies), which can detect the light wavelengths ranges from as low as UV to the wavelengths as high as 20 μm covering the most of the wavelengths using of the single monolithic image sensor on the single wafer. This invention is also related to the integrated circuit and the bonding technologies of the image sensor to standard integrated circuit for multicolor imaging, sensing, and advanced communication. Our innovative approach utilizes surface structure having more than micro-nano-scaled 3-dimensional (3-D) blocks which can provide broad spectral response. Utilizing multiple micro-nano scaled blocks help to increase the absorption spectra more than the material used as the absorption layer. In addition, utilizing the multiple nano-scaled 3-D blocks help to increase the absorption over the wavelength due to the multiple reflections and diffractions inside the 3-D structures. The absorption layers will be designed to achieve the required quantum efficiency and also required speed.
Owner:BANPIL PHOTONICS
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