70results about How to "Improve quantum efficiency" patented technology

The invention discloses a Si-based composite microstructure photoelectric detector and a forming method thereof, and relates to the technical field of photoelectric detection. The Si-based composite microstructure photoelectric detector comprises a signal acquisition first terminal, a light enhancement absorption microstructure and a light transmissible signal acquisition second terminal. The enhanced light absorption microstructure is composed of a short-wave-band visible light enhanced absorption circular light sensitive area, a middle-wave-band visible light enhanced absorption inner ring light sensitive area and a long-wave-band visible light enhanced absorption outer ring light sensitive area. According to the invention, the composite light sensitive unit with an eagle-eye bionic structure is designed, and low reflection and high absorption of light of different wavebands are realized by regulating and controlling the geometric shapes and arrangement modes of the rod-shaped, prismatic table-shaped and conical subunits in the microstructure, so that the light response characteristic of the photoelectric detector is improved.

The invention is suitable for the technical field of luminescent materials, and provides a multi-structure coordinated regulation efficient stable CsPbI3 nanorod and a preparation method and application thereof.The preparation method comprises the following steps that octadecene, oleic acid and cesium carbonate are heated in the inert gas atmosphere and stirred till a solution is dissolved, and a precursor solution is obtained; the preparation method comprises the following steps: adding lead iodide, nitrate, oleic acid and oleylamine into a container filled with octadecene, exhausting gas, introducing inert gas, heating, and stirring to obtain a clear and transparent solution; heating, and injecting the precursor solution in the step 1 into the clear and transparent solution in the step 2; and carrying out heat preservation at first, then rapidly cooling to room temperature, and then centrifugally dispersing into a non-polar solvent to obtain the CsPbI3 nanorod. The method is simple to operate and low in energy consumption, and the red light CsPbI3 perovskite nanocrystal is stable in sample phase, narrow in half-peak width, high in luminous color purity, few in surface defect, high in quantum efficiency and high in carrier transport capacity, and can be applied to the fields of LEDs, solar cells, photoelectric detectors and the like.

The invention discloses a quantum dot diffusion plate and a preparation method thereof, and relates to the technical field of diffusion plate materials. In-mold composite four-layer co-extrusion is carried out on the high-transmittance diffusion layer, the red quantum dot layer, the green quantum dot layer and the high-fog diffusion layer to prepare the quantum dot diffusion plate, and the quantum dot layer added with the green quantum dots and the red quantum dots is used as a middle layer. Red quantum dots and green quantum dots of the quantum dot diffusion plate subjected to in-mold composite four-layer co-extrusion are located among different layers and do not interfere with each other, the red quantum dot layer and the green quantum dot layer are separated, the four-layer extrusion process is carried out, the prepared quantum dot diffusion plate is narrow in emission spectrum wave crest and high in quantum efficiency, meanwhile, the diffusion layer has low water molecule migration rate, and the quantum dot diffusion plate can be used for preparing the quantum dot diffusion plate. Therefore, the quantum dot diffusion plate has good water and oxygen barrier efficiency, and has a good water and oxygen barrier effect while having a diffusion plate function.

The invention relates to the technical field of semiconductor materials and devices, and provides a superlattice infrared detector which comprises a substrate and an epitaxial structure growing on the substrate, the epitaxial structure comprises a superlattice absorption layer, the superlattice absorption layer is provided with multiple stages of A / B superlattice material layers which are sequentially grown in a laminated mode, and the A / B superlattice material layers are arranged on the substrate. Each stage of A / B superlattice material layer is provided with a plurality of layers of A materials and a plurality of layers of B materials which are periodically and alternately grown in a laminated mode, and in the multiple stages of A / B superlattice material layers, the number of atomic layers of the single layer of A material in each stage of A / B superlattice material layer is increased in a stepped mode compared with the number of atomic layers of the single layer of A material in the previous stage of A / B superlattice material layer. The conduction band of each stage of A / B superlattice material layer descends in a stepped manner, and the valence band of each stage of A / B superlattice material layer is kept unchanged. The limitation of short diffusion length can be reduced, the thickness of the absorption region can be effectively increased, the quantum efficiency of the device is improved, and the detection performance of the device is improved.

The invention provides an image sensor and a manufacturing method thereof, the image sensor comprises: a filter layer, the filter layer comprises a first filter layer and a second filter layer, the first filter layer comprises a first light-transmitting material layer and a second light-transmitting material layer, the refractive index of the second light-transmitting material layer is greater than that of the first light-transmitting material layer, and the refractive index of the second light-transmitting material layer is greater than that of the second light-transmitting material layer; the first filter layer comprises a first area, a second area, a third area and a fourth area, the first filter layer located in the first area, the second area, the third area and the fourth area has different optical thicknesses, and the first area allows light rays of other colors except the light rays of the first color in the mixed color light rays to pass through; the second area or the fourth area allows other color light rays except the second color light rays in the mixed color light rays to pass through, and the third area allows other color light rays except the third color light rays in the mixed color light rays to pass through; the second filter layer is located above the first area, the second area, the third area and the fourth area. According to the technical scheme, the quantum efficiency is greatly improved.

The invention relates to the technical field of semiconductor materials and devices, and provides a superlattice infrared detector which comprises a substrate and an epitaxial structure growing on the substrate. The epitaxial structure comprises a GaSb / Ga < 1-x > In < x > Sb superlattice buffer layer and an InAs / InAs < 1-y > Sby superlattice absorption layer, wherein the components of the GaSb / Ga < 1-x > In < x > Sb superlattice buffer layer are gradually changed, the InAs / InAs < 1-y > Sby superlattice absorption layer grows on the GaSb / Ga < 1-x > In < x > Sb superlattice buffer layer, and the InAs / InAs < 1-y > Sby superlattice absorption layer is matched with the lattice of the GaSb / Ga < 1-x > In < x > Sb superlattice buffer layer. The invention also provides a preparation method of the superlattice infrared detector. According to the invention, the GaSb / Ga1-xInxSb superlattice buffer layer with gradually changed components is introduced, the InAs / InAs1-ySby superlattice absorption layer grown on the buffer layer is improved, and the periodic thickness of the absorption layer is reduced, so that the absorption coefficient of the material of the absorption layer is improved, and the quantum efficiency of the device is improved.

The invention discloses a Micro-LED structure for improving pixel stability and a manufacturing method of the Micro-LED structure. The Micro-LED structure comprises a driving substrate and a Micro-LED tube core, wherein the driving substrate comprises an anode reflecting electrode, the Micro-LED tube core is located on the driving substrate, and the bottom of the Micro-LED tube core is connected with the top of the anode reflecting electrode; the Micro-LED tube core comprises a hole type conductive layer, an optimization layer, a light-emitting function layer, an electron type conductive layer, a passivation layer wrapping the side wall of the anode reflection electrode and the side wall of the Micro-LED tube core, and a cathode electrode located on the Micro-LED tube core, which are sequentially arranged from bottom to top; and the micro lens is positioned on the driving substrate and the cathode electrode and wraps the side wall of the passivation layer. According to the Micro-LED chip prepared by the method, the pixelating process is stable, the side wall quality of pixels is good, and the spatial uniformity of the pixels is high.

This invention discloses a method for fabricating a highly sensitive long-wavelength infrared superconducting single-photon detector. It fully utilizes and amplifies the acoustic mismatch effect between the superconducting thin film and the substrate to achieve phonon localization enhancement on the superconducting nanowires. The effect of this innovative design is to increase the energy utilization rate of long-wavelength infrared photons on the superconducting nanowires, thereby improving the response sensitivity of the superconducting nanowires to long-wavelength infrared photon signals. Compared to existing designs that reduce the cross-sectional size of the superconducting nanowires, create holes beneath the nanowires, or increase the buffer layer, this invention is easier to implement and has higher scalability.

The invention discloses a semi-polar gallium nitride-based LED based on an in-situ SiNx insertion layer. According to the structure of the semi-polar gallium nitride-based LED, an AlN buffer layer, a u-GaN layer, the SiNx insertion layer, a u-GaN layer, an n-GaN layer, a multi-layer quantum well structure, a p-GaN layer and a p +-GaN layer are sequentially deposited on a sapphire substrate from bottom to top. According to the method, the silicon nitride (SiNx) intermediate layer is inserted through in-situ growth, and the growth mode of converting 3D into 2D is combined, so that the crystal quality of the semipolar (11-22) GaN template is improved, and the pressure stress on the sapphire substrate of the semipolar (11-22) GaN template can be effectively released; the method has good expansibility for large-area growth of the semi-polar GaN-based LED, and a possible solution is provided for large-scale manufacturing of the long-wavelength LED.

The invention relates to H2S detection, in particular to an aggregation-induced emission-based ratiometric fluorescence sensing system and application thereof.Penicillamine is used as a ligand to synthesize gold-copper nano-clusters (Pen-Au / CuNCs) and tetraphenylethylene modified hollow mesoporous silica (TPE-NH2-HMSNs) of an amino ligand, and the Pen-Au / CuNCs and the tetraphenylethylene modified hollow mesoporous silica are combined to successfully construct an efficient ratiometric fluorescence sensing platform (Au / CuNCs and HMSNs). The sensor is used for selectively detecting H2S, and two analysis methods of solution sensing and solid portable sensing are established. Compared with other methods for detecting H2S reported before, the method provided by the invention has a lower detection limit (0.147 [mu] M). In addition, a novel portable hydrogel bead fluorescence detection device is developed by utilizing color change, and quantitative visual detection of H2S is realized by combining with a smart phone.

The invention discloses an indium phosphide quantum dot with a large Stokes shift and a preparation method thereof, and relates to the technical field of quantum dot materials. The preparation method comprises: isolating an indium precursor from oxygen and water at a first temperature, fully dissolving it, adding a phosphorus precursor and then raising the temperature to a second temperature to react, obtaining an indium phosphide core, then adding a shell precursor, raising the temperature to a third temperature, obtaining a quantum dot of a core-shell structure, and then sequentially adding anion and cation precursors at the third temperature to obtain a quantum dot with an emission peak adjustable between 465 and 650 nm, high quantum efficiency and a large Stokes shift. The quantum dot mainly has a large Stokes shift to suppress self-absorption and non-radiative resonant energy transfer, a wide bandgap shell can effectively passivate surface defects, achieve a high fluorescence quantum efficiency, and the position of the fluorescence emission peak can be adjusted in the visible light range by changing the activity of the precursor, does not contain heavy metal elements such as cadmium and lead, and is relatively friendly to the environment.

The application discloses a kind of double light metal doped modified carbon nitride photocatalyst and preparation method thereof, comprising the following steps: (1) the pretreatment of precursor, according to certain mass ratio, two metal salts are mixed with carbon and nitrogen-containing organic matter and are uniformly ground;(2) preparation is carried out using high-temperature thermal polycondensation method, and constant temperature calcination is carried out under certain conditions;(3) the sample prepared by calcining is washed, centrifuged and dried to obtain double metal co-doped polymer carbon nitride.The method is simple, low in cost, uniform in morphology and high in catalytic activity.The application uses cheap main group light metal to dope and modify carbon nitride (Na-Mg / CN), and the solar conversion quantum yield of the composite material is high, the selectivity of photocatalytic preparation of hydrogen peroxide (H2O2) is good, the efficiency is high, and it can be applied to the field of artificial photosynthesis to prepare important chemicals.

The invention relates to the technical field of solid-state lighting, and particularly discloses a far-red light-emitting material, a preparation method thereof and a light-emitting device. The general chemical formula of the luminescent material is A (2-m) / 3BmC0. 5W0. 5O3: xMn < 4 + >, and A is one or a combination of La, Gd, Lu, Sc and Y rare earth ions; b is one or a combination of Li, Na, K, Rb and Cs alkaline earth metals; c is one or a combination of Mg, Ca, Sr and Ba alkaline earth metals; 0 < = m < = 2; 0.01 mol% < = x < = 50 mol%. The powder material is prepared by adopting a high-temperature solid-phase method, and the method is simple in process, environment-friendly and low in cost. The light-emitting material can emit far-red light, and the technical problems that an existing far-red light-emitting material is few in matrix and poor in performance are effectively solved.

This invention discloses a spray / spray-enhanced industrial photocatalytic reactor and its method. The reactor includes a light-transmitting and pressure-resistant reaction chamber, a spray / spray unit, a lighting unit, a gas-liquid separation unit, and a pressure control unit. By atomizing the liquid to be reacted into microdroplet clusters and / or forming a thin liquid film, the equivalent optical path of the liquid phase is significantly shortened, improving light penetration and photon utilization. Simultaneously, combined with pressure control structures such as back pressure valves and pressure stabilizing tanks, and gas-liquid separation / demisting structures, controllable pressure and low pressure drop are achieved under continuous operation. The reaction chamber material is not limited to quartz glass, but can also be borosilicate glass, tempered glass, transparent ceramics, or sapphire, etc.; the light source is not limited to LEDs, but can also be xenon lamps, halogen lamps, mercury lamps, lasers, or sunlight simulators, etc. The system can operate in a cyclic or multi-stage series, suitable for the scale-up and integration of various industrial photocatalytic processes.

The invention discloses Mn < 4 + > activated dark red light emitting fluorescent powder for plant growth as well as a preparation method and application thereof, and belongs to the technical field of solid luminescent materials. The chemical formula of the fluorescent powder is La2-2x-zA2xMg (Al1 / 2-x-zWz, Ta1 / 2 + x) O6: yMn < 4 + >, A is one or a combination of more of Ca, Sr and Ba, and x is more than or equal to 0 and less than or equal to 1 / 2; y is more than 0 and less than or equal to 0.3; z is more than or equal to 0 and less than or equal to 1 / 2; x + z < = 1 / 2. The fluorescent powder synthesized by the invention can effectively convert ultraviolet light and part of visible light in sunlight into far-red light, has the characteristics of high quantum efficiency, good water stability and good overlap between an emission spectrum and an absorption band of plant phytochrome, and is applied to a light conversion film to supplement light for stem and leaf plants and melon and fruit plants; the photosynthesis efficiency can be effectively enhanced, the growth cycle is shortened, the plant yield and the fruit quality are improved, and good application prospects are achieved in the field of plant cultivation.

The present invention provides an LED chip and a preparation method thereof, wherein etching is performed in a local area of ​​an epitaxial stack to a part of the N-type semiconductor layer, so that the epitaxial stack forms an N-electrode manufacturing area and a first table; a P-electrode manufacturing area is provided on the surface of the first table, and a plurality of holes are provided on the edge of the first table, each of the holes extending from the P-type semiconductor layer through the active area to a part of the N-type semiconductor layer; a light-transmitting insulating material is filled inside each of the holes, and each of the holes is filled at least to the same horizontal surface as the active area; and then, under the condition that the driving current of the LED chip is constant, the current density is effectively improved to achieve the effect of enhancing the internal quantum efficiency of the LED chip; at the same time, light can be emitted through the side walls of the holes, the light emission area is increased, and the external quantum efficiency of the LED chip is further improved; thereby, the light extraction rate of the LED chip is effectively improved.

The invention provides an organic compound and application thereof, the organic compound has a structure shown as a formula I. The organic compound provided by the invention has the properties of multiple resonance molecules and conjugated molecules through design of molecular structures and mutual compounding of the structures, namely, the organic compound has narrow fluorescence emission spectrum, high quantum efficiency and long device life; the compound is applied to the organic electroluminescent device, can be used as a fluorescent doping material of a luminescent layer, and can effectively improve the luminous efficiency and prolong the service life of the organic electroluminescent device, so that the device has higher color purity.

The present application relates to quantum computing technology. Provided are a quantum circuit optimization method and apparatus, and an electronic device, a computer-readable storage medium and a computer program product. The method comprises: converting, into a unitary matrix to be processed, a quantum circuit to be optimized, and performing iterative decomposition on said unitary matrix, so as to obtain a first number of quantum-bit uniform control gates; decomposing each quantum-bit uniform control gate into a second number of quantum-bit diagonal unitary matrices and a third number of single-quantum-bit gates; on the basis of a connected graph, determining a matching quantum circuit corresponding to each quantum-bit diagonal unitary matrix; integrating a second number of matching quantum circuits and the third number of single-quantum-bit gates, so as to obtain a target quantum circuit of each quantum-bit uniform control gate; and connecting a first number of target quantum circuits, so as to obtain an optimized quantum circuit.

The present invention relates to a spectral dimming packaging structure containing a violet or near-ultraviolet chip, and also to a manufacturing method of the packaging structure, which is characterized by comprising a first wavelength blue light chip, a second wavelength blue light chip, a violet or near-ultraviolet chip and a packaging layer, a long wavelength phosphor glue layer is arranged on the surface of the first wavelength blue light chip to form a long wavelength package, a short wavelength phosphor glue layer is arranged on the surface of the violet or near-ultraviolet chip to form a short wavelength package, and the packaging layer is used to encapsulate each short wavelength package, the second wavelength blue light chip and the long wavelength package as a whole. The advantages of the present invention are: using multiple chips with different wavelengths for excitation can take into account the excitation wavelengths of different phosphors, and can avoid the short wavelength fluorescence generated by the short wavelength phosphor from exciting the long wavelength phosphor again and being reabsorbed; the optimal excitation wavelength achieves the highest quantum efficiency and improves the light efficiency of the light source at the same time.

According to the present disclosure, there is provided an imaging device, comprising: a first semiconductor layer (180) formed on a semiconductor substrate; a second semiconductor layer (170) formed on the first semiconductor layer (180) and having a conductivity type opposite to that of the first semiconductor layer (180); a pixel separation portion (150) dividing a pixel region including the first semiconductor layer (180) and the second semiconductor layer (170); a first electrode (130) connected to the first semiconductor layer (180) from one surface side of the semiconductor substrate; and a metal layer (152) connected to the second semiconductor layer (170) from a light irradiation surface side of the other surface of the semiconductor substrate, wherein the metal layer (152) is buried in the pixel separation portion (150) at least partially in the thickness direction of the semiconductor substrate.

The invention belongs to the field of chemical detection, and discloses a fluorescent probe P1, a preparation method thereof and application of the fluorescent probe P1 in spermidine and viscosity dual-function detection. The structural formula of the fluorescent probe P1 is shown in the specification. The recognition performance of the probe P1 in various common analytes in a DMF-HEPES buffer system is researched through a fluorescence spectrophotometer. Results show that the probe P1 has specific fluorescence recognition performance on spermidine, can overcome interference of other common analytes, and has a wide pH value application range. The probe has relatively good sensitivity on the recognition of spermidine, and the lowest detection limit is 0.213 mu M. In addition, the probe P1 has a good response effect on the viscosity of the solution, is not interfered by the polarity of the solution, and can realize quantitative detection of the viscosity. The results show that the probe P1 has wide application prospects in the fields of food safety, environmental detection and biology.

This invention provides a nitrogen oxide green fluorescent material, its preparation method, and its application. The general chemical formula of the nitrogen oxide green fluorescent material is Ba. 1‑x Eu x LnSiO3N, wherein Ln can be one or more of Sc, Y, La, Gd, or Lu, and Sc is essential, and Sc accounts for >50% (molar ratio) of Ln.

The application belongs to the technical field of nanocrystal material preparation, and particularly relates to a preparation method of organic perovskite nanocrystal and the organic perovskite nanocrystal. The method comprises the steps of obtaining a precursor solution and performing high-temperature vacuum extraction on the precursor solution. The step of obtaining the precursor solution at least comprises: heating and complexing organic precursor salt and a ligand to form an organic salt complex; the structure of the ligand is R1-R-SO3H, wherein R is selected from C6-C18 arylene, R1 is selected from C n H 2n+1 , H, and n is an integer from 1 to 18. The method can completely remove impurities in the synthesis of the organic perovskite nanocrystal during the high-temperature vacuum extraction operation by pre-synthesizing the organic salt complex, which has a higher melting point and binding stability, while avoiding the escape of small organic molecules caused by high-temperature vacuum extraction. The synthesized nanocrystal has adjustable wavelength, uniform size, high quantum efficiency and high stability.

The invention discloses a solar cell piece, a solar cell module and a preparation method thereof, and relates to the technical field of solar cells. The composite solar cell comprises a solar cell and a photonic crystal structure layer located on the surface of the solar cell and / or in the solar cell, materials of the photonic crystal structure layer comprise a first material and a second material, and the absolute value of the refractive index difference value of the first material and the second material is larger than or equal to 0.1. The first material includes at least one of an up-conversion material, a down-conversion material, and a perovskite material. The photonic crystal structure layer is arranged on the solar cell, so that the light field distribution after sunlight is incident can be changed, the propagation path of sunlight in the solar cell is increased, and the effect of enhancing the photoelectric conversion efficiency of the solar cell is realized by utilizing light diffraction. In addition, light in a wave band with low absorption and utilization efficiency of the solar cell can be converted into light in a wave band with high absorption and utilization efficiency, and efficient absorption and utilization of sunlight in a wider wave band range by the solar cell are further enhanced. The photoelectric conversion efficiency and the quantum efficiency of the solar cell are improved through the combined action of the two aspects.

The utility model belongs to the technical field of LEDs, and discloses a novel quantum dot LED light source and an LED display screen, the novel quantum dot LED light source comprises a support, a blue light chip and a pouring layer, an installation space for accommodating the blue light chip is arranged in the support, the pouring layer is filled in the installation space and wraps the blue light chip, and the blue light chip is arranged in the installation space. The pouring layer comprises red light quantum dots, green light quantum dots and a copolymer, the copolymer wraps the red light quantum dots and the green light quantum dots, and according to the technical scheme, the packaging technology of the LED light source can be simplified, and the production efficiency and the light energy utilization rate can be improved.

A semiconductor structure and a forming method thereof, the method comprising: providing a substrate, the substrate comprising a photoelectric conversion region; forming a photodetection structure on the top of the substrate of the photoelectric conversion region, the photodetection structure comprising a light absorption layer and a first doped layer in contact with two sides of the light absorption layer, and the first doped layers on the two sides of the light absorption layer are of different doping types; forming a light field limiting layer on the top of the first doped layers on the two sides of the light absorption layer, and the extending direction of the light field limiting layer is the same as that of the first doped layers. The response and bandwidth of the semiconductor structure are improved, and the contradiction between the response and the bandwidth of the semiconductor structure is effectively alleviated.

The invention discloses a gallium nitride-based red light emitting diode epitaxial structure and preparation and application thereof. The epitaxial structure sequentially comprises a sapphire substrate, a low-temperature GaN nucleating layer, a high-temperature non-doped GaN buffer layer, an n-type GaN layer, a low-temperature GaN V-type layer, an In < x > < 1 > Ga < 1-x > < 1 > N / GaN stress release layer, an In < x > Ga < 1-x > N / In < y > Ga < 1-y > N multi-quantum well light-emitting layer structure MQW, a composite protection layer, a p-type Al < y > < 1 > Ga-y < 1 > N electron barrier layer, a high-temperature p-type GaN layer and a p-type InGaN contact layer from bottom to top. The problem that the quantum efficiency of an existing InGaN-based red light LED is very low is solved. According to the invention, a composite protection layer with a stress release effect is grown between a high indium (In) component red light active region and a high-temperature p-type layer. Compared with an LED sample without a composite protection layer, the internal quantum efficiency is remarkably improved, and the maximum internal quantum efficiency is up to 110%.

A quantum dot, an optical component including the quantum dot, an electronic device, and an electronic apparatus are disclosed. According to one aspect, there is provided a quantum dot including: a core including a Group I element, a Group III element, a Group VI element, and gallium (Ga); a first shell including a group I element, a group III element, a group VI element, and gallium (Ga), and covering the core; and a second shell covering the first shell, in which the band gaps of the core, the first shell, and the second shell satisfy the following formula (1) and formula (2): EBSHELL1lt; eBCORE (1); an EBCORElt (electron beam COREt); eBSHELL2 (2) wherein EBCORE is the energy band gap of the core, EBSHELL1 is the energy band gap of the first shell, and EBSHELL2 is the energy band gap of the second shell, and wherein EBCORE is the energy band gap of the core, EBSHELL1 is the energy band gap of the first shell, and EBSHELL2 is the energy band gap of the second shell.

The invention discloses a 2m-band GHz solid mode-locking device based on electric regulation and control, which belongs to the technical field of ultrafast laser technology and semiconductor device, and comprises a high-brightness fiber laser pumping source, a light focusing and coupling system for focusing and collimating the pumping source, a first input mirror for transmitting and reflecting a focused laser beam, and a second input mirror for transmitting and reflecting the focused laser beam. The first input mirror and the second input mirror are used for focusing laser beams, the gain medium is used for generating and amplifying laser, the second input mirror and the third input mirror are used for reflecting the focused laser beams, and the two-dimensional Bi2O2Se electro-optical modulator is used for modulating the laser beams. According to the invention, a two-dimensional Bi2O2Se electro-optical modulator with low saturation flux, fast saturation recovery time and moderate modulation depth is developed to overcome the technical barrier of solid GHz femtosecond mode locking.

The present invention relates to a high-rendering index and high-light-efficiency package, comprising a support member, on which a first LED chip and a second LED chip are arranged; a red phosphor colloid layer is arranged on at least the top surface of the surface of the second LED chip to form a package A; a short-wavelength phosphor colloid layer that does not contain red phosphor is arranged outside the first LED chip and the package A to form an overall package. The advantages of the present invention are that the high-rendering index and high-light-efficiency package of the present invention can take into account the excitation wavelengths of different phosphors by using multiple chips with different wavelengths for excitation.