10results about How to "Improve quantum efficiency" patented technology

This invention discloses a method for fabricating a highly sensitive long-wavelength infrared superconducting single-photon detector. It fully utilizes and amplifies the acoustic mismatch effect between the superconducting thin film and the substrate to achieve phonon localization enhancement on the superconducting nanowires. The effect of this innovative design is to increase the energy utilization rate of long-wavelength infrared photons on the superconducting nanowires, thereby improving the response sensitivity of the superconducting nanowires to long-wavelength infrared photon signals. Compared to existing designs that reduce the cross-sectional size of the superconducting nanowires, create holes beneath the nanowires, or increase the buffer layer, this invention is easier to implement and has higher scalability.

This invention discloses a spray / spray-enhanced industrial photocatalytic reactor and its method. The reactor includes a light-transmitting and pressure-resistant reaction chamber, a spray / spray unit, a lighting unit, a gas-liquid separation unit, and a pressure control unit. By atomizing the liquid to be reacted into microdroplet clusters and / or forming a thin liquid film, the equivalent optical path of the liquid phase is significantly shortened, improving light penetration and photon utilization. Simultaneously, combined with pressure control structures such as back pressure valves and pressure stabilizing tanks, and gas-liquid separation / demisting structures, controllable pressure and low pressure drop are achieved under continuous operation. The reaction chamber material is not limited to quartz glass, but can also be borosilicate glass, tempered glass, transparent ceramics, or sapphire, etc.; the light source is not limited to LEDs, but can also be xenon lamps, halogen lamps, mercury lamps, lasers, or sunlight simulators, etc. The system can operate in a cyclic or multi-stage series, suitable for the scale-up and integration of various industrial photocatalytic processes.

This invention provides a nitrogen oxide green fluorescent material, its preparation method, and its application. The general chemical formula of the nitrogen oxide green fluorescent material is Ba. 1‑x Eu x LnSiO3N, wherein Ln can be one or more of Sc, Y, La, Gd, or Lu, and Sc is essential, and Sc accounts for >50% (molar ratio) of Ln.

This invention belongs to the field of nanocomposite material preparation and application technology, and discloses a method for preparing and applying a dendritic ternary SrCO3-TiO2 / CdS composite material. First, SrCO3-TiO2 nanoparticles are synthesized using a simple hydrothermal one-pot method with tetrabutyl titanate and Sr(NO3)2 as raw materials. These nanoparticles are then dispersed in deionized water to form a suspension. Finally, a dendritic ternary SrCO3-TiO2 / CdS composite material is prepared using an in-situ hydrothermal growth method. The dendritic ternary SrCO3-TiO2 / CdS composite material prepared by this invention can be used to produce hydrogen peroxide under visible light and simultaneously degrade oxytetracycline. The dendritic ternary SrCO3-TiO2 / CdS composite material prepared by this invention forms a unique dendritic structure by combining SrCO3-TiO2 composite particles with CdS. By utilizing the synergistic effect among the three, the transport and separation of photogenerated electron pairs at the interface are accelerated, and their recombination is effectively inhibited, thereby improving the catalytic activity of the dendritic ternary SrCO3-TiO2 / CdS composite material. It has broad application prospects in the synthesis of green chemicals and water pollution treatment.

This application belongs to the field of display technology, specifically relating to an optoelectronic device, its fabrication method, and a display apparatus. The optoelectronic device includes a stacked anode, a hole-functional layer, an active layer, and a cathode; wherein an interface layer is further disposed between the hole-functional layer and the active layer, and the material of the interface layer includes a Group 3 metal salt and nanoparticles. This application effectively improves the lifespan and external quantum efficiency of the optoelectronic device by suppressing the accumulation of excess electrons through the interface layer connected to the active layer.

This invention provides a triarylboron-modified fluorescent material, its preparation method, and its applications. The triarylboron-modified fluorescent material is as shown in Compound I. The compound of this invention utilizes the electron-withdrawing ability and high steric hindrance of triarylboron to effectively accelerate the antisystem crossing rate of narrow-band luminescent materials, reducing intermolecular interactions, thereby improving quantum efficiency and suppressing the efficiency roll-off problem of organic electroluminescent devices. Furthermore, due to the typical electron-donating characteristics, strong resonance effect, and rigid molecular structure of this type of molecule, the emission spectrum becomes narrower, thus achieving very high purity green light emission.

This invention relates to the field of organic electroluminescent materials, specifically to an iridium metal complex, and more particularly to an iridium metal complex for deep red-near-infrared emission and its applications, as well as organic electroluminescent devices using the iridium metal complex of this invention. The iridium metal complex of this invention has the structure shown in formula (1). OLED devices prepared using the iridium metal complex of this invention exhibit higher luminous efficiency and better lifespan, demonstrating promising application prospects.

The invention discloses a photocatalytic material for synchronously removing composite new pollutants in plateau lakes and a preparation method and application of the photocatalytic material, and relates to the technical field of environmental functional materials, the photocatalytic material is a rare earth metal doped silicon dioxide composite material, and the molar ratio of rare earth metal to silicon is 3-15%; the composite new pollutants comprise micro-plastics, antibiotics and dyes. Rare earth doping is carried out on silicon dioxide, the light response range of the material is effectively widened, the separation and migration efficiency of photo-induced electron-hole pairs is remarkably improved, and therefore synchronous and efficient removal of three kinds of new composite pollutants including micro-plastics, antibiotics and dyes in a water body is achieved at the normal temperature and the normal pressure; the prepared 10% La-SiO2 and other rare earth doped silicon dioxide materials show more excellent photocatalytic activity in a plateau strong ultraviolet environment, and have the comprehensive advantages of low raw material cost, environmental friendliness, no need of complex recovery after use and the like.

This invention provides a silicon-based germanium avalanche photodetector, comprising a substrate; an N-type doped silicon layer disposed on the substrate and electrically isolated from it; an intrinsic silicon layer disposed on the side of the N-type doped silicon layer away from the substrate; a P-type doped silicon charge layer disposed on the side of the intrinsic silicon layer away from the substrate; and a P-type doped germanium absorption layer disposed on the side of the P-type doped silicon charge layer away from the substrate. The detector employs a silicon waveguide structure design, allowing optical signals to couple into the P-type doped germanium absorption layer via the silicon layer beneath the P-type doped germanium absorption layer. A distributed Bragg reflector is provided at the detector's output end to reflect any remaining unabsorbed optical signals emitted by the detector. This silicon-based germanium avalanche photodetector achieves low dark current, low voltage, and high speed, thereby improving detector sensitivity and detection performance.

The application belongs to the technical field of organic electroluminescent materials, and particularly relates to a thermally activated delayed fluorescence material and an organic electroluminescent device thereof, wherein through precise design of an outer carbazole derivative part deuterium substitution, efficient balance of cost, stability and photoelectric performance is achieved. In terms of photoelectric performance, the outer carbazole part deuterium substitution retains the hole transport characteristics of carbazole, the low vibration frequency of C-D bond inhibits non-radiative transition, and the quantum efficiency is improved. Meanwhile, the cost of the carbazole part deuterium substitution is also lower than that of full deuterium substitution, which is conducive to reducing the production cost.