The invention relates to the technical field of
semiconductor device preparation, and discloses a
silicon-based heterogeneous device monolithic integration method and a
silicon-based heterogeneous device monolithic, and the method comprises the steps: depositing a
dielectric material on the surface of a
silicon substrate, forming an isolation groove above an N well and a P well, and forming an epitaxial lamination in the groove; depositing a
hard mask layer and carrying out graphical process treatment, forming a reserved
mask layer above the epitaxial lamination layer, and then preparing two different types of vertical devices in the isolation groove; depositing a
dielectric material in the isolation groove, and exposing the surface of the vertical device in an external environment by adopting a sinking process; hKMG deposition and graphical process
processing are carried out on the surface of the vertical device to form a high-K
metal gate, then interlayer
dielectric deposition is carried out to form an interlayer
dielectric layer, through hole
etching is carried out on the interlayer
dielectric layer, and conductive
metal is filled to form a silicon-based heterogeneous device
single chip. According to the method, high-density integration of different types of vertical devices is realized, and the performance, the reliability and the integration degree of the device are remarkably improved.