4172 results about "Ceramic substrate" patented technology

The invention relates to the technical field of carbon fiber reinforced ceramic matrix composites, in particular to a sintering process of a surface-modified short carbon fiber reinforced ceramic matrix composite, which comprises the following steps: surface modification treatment of short carbon fibers, preparation of a ceramic matrix material, mixing of the short carbon fibers and ceramic powder, compression molding and sintering. In the invention, the process is not only suitable for various ceramic matrixes such as aluminum oxide, silicon carbide, silicon nitride, zirconium oxide and the like, but also can flexibly adjust process parameters such as oxidizing agent types, coupling agent treatment time, ceramic powder particle size, forming pressure, sintering temperature and the like, so that customized preparation with different application requirements is realized; the prepared composite material has extremely high toughness, wear resistance and high-temperature resistance, and shows a wide application prospect.

The invention relates to the technical field of ceramic substrates, and provides a low-dielectric-loss multilayer ceramic substrate and a preparation method thereof. The low-dielectric-loss multilayer ceramic substrate is prepared from, by weight, 90-100 parts of aluminum oxide, 1-3 parts of plasticizer, 3-5 parts of sintering aid, 6-10 parts of binder, 1-3 parts of dispersing agent and 50-60 parts of water, the aluminum oxide is composed of first aluminum oxide and second aluminum oxide, and the first aluminum oxide and the second aluminum oxide are different in form. According to the technical scheme, the problem of high dielectric loss of the multilayer ceramic substrate in the prior art is solved.

The invention relates to the technical field of ceramic substrates, and provides an aluminum oxide multilayer ceramic substrate and a preparation method thereof. The aluminum oxide multilayer ceramic substrate comprises the following raw materials in parts by weight: 80-90 parts of pretreated aluminum oxide, 1-4 parts of a sintering aid, 1-2 parts of a dispersing agent, 6-12 parts of a binder and 85-95 parts of a solvent, the preparation method of the pretreated aluminum oxide comprises the following steps: performing wet ball milling, drying, sintering and crushing on aluminum oxide, manganese sesquioxide, magnesium oxide and zirconium oxide to obtain the pretreated aluminum oxide. According to the technical scheme, the problem that the bending strength of the aluminum oxide multilayer ceramic substrate prepared from the aluminum oxide raw material with the purity of 95% in the related technology is low is solved.

The invention belongs to the technical field of semiconductors, and discloses a SiC power semiconductor module with low parasitic parameters and a preparation method. Comprising a SiC power semiconductor chip, a SiC power semiconductor chip substrate cushion block, a positive electrode power terminal, a negative electrode power terminal, an output power terminal, a positive electrode side middle layer cushion block, a positive electrode side ceramic decoupling capacitor, a positive electrode side substrate middle layer cushion block, a negative electrode side middle layer cushion block, a negative electrode side ceramic decoupling capacitor and a negative electrode side substrate middle layer cushion block. A first copper-clad ceramic substrate, a third copper-clad ceramic substrate, a fourth copper-clad ceramic substrate, a second copper-clad ceramic substrate, a first commutation loop middle copper layer and a second commutation loop middle copper layer; according to the invention, a commutation path is provided for the SiC power semiconductor device by using the middle layer copper of the laminated copper-clad ceramic substrate, the concept of mutual inductance offset of double commutation loops is innovatively introduced, and the parasitic inductance of the module is further reduced.

A microwave oven includes a housing defining an interior cavity, a magnetron positioned within the housing and outside of the interior cavity and a micro-wave antenna in electrical communication with the magnetron and positioned adjacent a lower surface of the interior cavity. The microwave oven further includes a heating plate that includes a glass-ceramic substrate defining at least a portion of the lower surface of the interior cavity. The heating plate further includes a resistive-heating coating applied on a portion of the glass-ceramic substrate and defining at least one open micro-wave transmissive path from the micro-wave antenna to the interior cavity.

The invention discloses a preparation method of a textured silicon nitride ceramic substrate, and belongs to the technical field of ceramic products. Beta-silicon nitride whiskers with the long diameter of 4-15 microns and the short diameter of 1-3 microns are added into silicon nitride ceramic slurry according to the design, and when the whiskers containing beta-silicon nitride pass through a scraper of a casting machine, the whiskers tend to be directionally arranged in the casting direction, so that a textured structure is generated in the silicon nitride ceramic substrate. The textured structure is beneficial to improving the three-point bending strength, the fracture toughness and the thermal conductivity in the horizontal direction of the ceramic substrate.

The invention relates to the technical field of ceramic substrates, and provides a high-toughness multilayer ceramic substrate and a preparation method thereof. Raw materials of the high-toughness multilayer ceramic substrate comprise the following components in parts by weight: 90-95 parts of aluminum oxide, 13-17 parts of a sintering aid, 2-5 parts of a plasticizer, 1-3 parts of a dispersant, 3-5 parts of a binder, 10-12 parts of an aid and 55-65 parts of water, the auxiliaries comprise boron carbide, copper-tin alloy powder and graphene oxide. According to the technical scheme, the problem of poor toughness of the multi-layer ceramic substrate in the prior art is solved.

The invention provides a frequency tripling circulator and electronic equipment, and the frequency tripling circulator comprises a grounding plate, a composite substrate located above the grounding plate, and an upper metal layer located on the composite substrate, the composite substrate comprises a ceramic substrate, and the surface of the ceramic substrate is provided with a through inner ferrite; the outer side of the inner ferrite is sequentially sleeved with a plurality of annular outer ferrites, and the saturation magnetization intensity of the inner ferrite and the saturation magnetization intensity of the outer ferrites are sequentially reduced from inside to outside; the upper metal layer comprises a central junction, the central junction is provided with three end points, each end point is connected with one port of the circulator through a metal transmission path, and the side edge of the central junction is provided with a plurality of SSPP grooves between two adjacent end points to form SSPPs branches. The scheme can have the characteristics of miniaturization and broadband, thereby satisfying more application scenes.

The present disclosure relates to a ceramic substrate unit and a manufacturing method therefor, which can suppress warpage due to a difference between the volumes of upper and lower metal layers in a ceramic substrate by calculating the volume of the upper metal layer and forming a plurality of grooves in the lower metal layer to have a predetermined volume corresponding to the volume of an upper electrode.

The invention relates to the technical field of circuit substrate manufacturing, and particularly discloses a preparation method of a composite solder sheet and an AMB ceramic copper-clad plate. The composite solder sheet is composed of an active metal foil and a copper-containing layer modified on the surface of the active metal foil, and the preparation method of the copper-clad plate comprises the following steps: after the surface of the active metal foil is pretreated, the copper-containing layer is deposited to prepare the composite solder sheet, and the composite solder sheet is placed between a copper substrate and a ceramic sheet to be pressed and assembled. And performing vacuum brazing on the assembly to complete the preparation of the ceramic copper-clad plate. A composite solder sheet containing active metal is adopted, high-temperature element diffusion during vacuum brazing is utilized at the diffusion temperature to achieve alloying of a composite solder layer, and then heat preservation is conducted at the brazing temperature to achieve uniform melting of solder and wetting metallurgical reaction between the solder and copper and between the solder and a ceramic substrate. By means of the preparation method, low-cost and high-reliability preparation of the AMB ceramic copper-clad plate can be achieved, and the prepared AMB ceramic copper-clad plate also has high peel strength and lower weld porosity.

The invention belongs to the technical field of whisker material growth and ceramic substrate preparation, and discloses a preparation method of an aluminum nitride whisker and a high-strength and high-thermal-conductivity ceramic substrate, and the preparation method of the aluminum nitride whisker comprises the following steps: mixing aluminum powder serving as a raw material and ammonium salt serving as an inducer according to a mass ratio of (2: 1)-(1: 2); and carrying out heat preservation for 0.5-2 hours at the temperature of 800-1100 DEG C under the nitrogen and / or ammonia atmosphere condition, and carrying out nitridation reaction. According to the invention, a whisker and ceramic substrate synthesis method is improved, aluminum nitride whiskers with uniform morphology and length-diameter ratio are controllably synthesized through a rapid nitriding method, and the aluminum nitride whiskers and spherical aluminum nitride are sintered only by taking the aluminum nitride whiskers as an additive without the participation of additional sintering aids and reinforcers, so that the ceramic substrate is obtained. The high-strength and high-thermal-conductivity aluminum nitride ceramic substrate is obtained and has high mechanical strength and thermal conductivity.

The invention relates to an anti-static black aluminum oxide ceramic substrate and a preparation process thereof. The ceramic substrate comprises ceramic powder, an organic solvent, a dispersing agent, a binder and a plasticizer. The black aluminum oxide ceramic substrate is prepared through the processes of tape casting, warm pressing and sintering. The ceramic powder comprises the following materials in parts by weight: 40-55 parts of aluminum oxide, 2.5-5 parts of nano semiconductor whiskers, 5-20 parts of special anti-static black pigment, 20-30 parts of an organic solvent, 1-3 parts of a dispersing agent, 5-8 parts of an adhesive and 3-7 parts of a plasticizer. The special anti-static black pigment can form a continuous conductive phase, and static accumulation is reduced. The added nano semiconductor whiskers have certain conductivity, and the whiskers form a conductive and heat-conducting network channel in the substrate through a warm-pressing process, so that generated electrostatic charges can be discharged in time, and meanwhile, the heat dissipation performance of the substrate is further enhanced. The light-shielding and light-absorbing material has good light-shielding and light-absorbing performance, and is suitable for photosensitive integrated circuits, semiconductor components, nixie tube packaging shells and the like. The problem that electronic components are damaged due to static electricity accumulation generated in the manufacturing and using processes of the electronic devices is effectively solved.

The invention relates to the technical field of ceramic substrates, and provides a bending-resistant multilayer ceramic substrate and a preparation method thereof.The bending-resistant multilayer ceramic substrate is prepared from, by weight, 100 parts of aluminum oxide, 2-4 parts of a sintering aid, 1-2 parts of a plasticizer, 1-2 parts of a reinforcing agent, 1-3 parts of a dispersing agent, 8-12 parts of a binder and 85-90 parts of water; the reinforcing agent comprises tungsten trioxide and cobaltosic oxide. According to the technical scheme, the problem of low bending strength of the multilayer ceramic substrate in the prior art is solved.

The utility model discloses a chip resistor heat dissipation structure, which comprises a resistor main body structure, a first electrode structure and a second electrode structure, the first electrode structure and the second electrode structure are respectively arranged at two ends of the resistor main body structure, and the resistor main body structure comprises a ceramic substrate, a resistor layer, an inner protection layer and an outer protection layer, the resistance layer is arranged on one side of the upper end of the ceramic substrate, the inner protection layer is arranged on the outer side of the resistance layer, the outer protection layer is arranged on the outer side of the inner protection layer, a first reinforcing block is arranged in the middle of the interior of the ceramic substrate, and second reinforcing blocks are symmetrically arranged on the two sides of the first reinforcing block in the ceramic substrate. Compared with the prior art, the ceramic substrate has the advantages that the circulation grooves and the heat dissipation openings are additionally formed in the ceramic substrate, the heat dissipation speed of the ceramic substrate can be increased, meanwhile, the first reinforcing blocks and the second reinforcing blocks are additionally arranged, and therefore the stability of the structure of the ceramic substrate is guaranteed while internal heat dissipation of the ceramic substrate is not affected.

The invention provides a preparation method of a high-performance silicon nitride ceramic substrate, and relates to the field of production and preparation of silicon nitride ceramic substrates, and the high-performance silicon nitride ceramic substrate comprises the following raw materials by weight: 40-130 parts of silicon nitride powder, 20-110 parts of an organic solvent, 3-15 parts of a sintering aid, 5-15 parts of a binder, 2-6 parts of a plasticizer, and 1-6 parts of a dispersant. A tape casting method is adopted, the silicon nitride ceramic substrate is prepared through glue discharging and air pressure sintering, and the silane coupling agent, the silicon powder, the beta-phase silicon nitride powder, the silicon carbide whiskers and other ingredients can remarkably improve the strength and the thermal conductivity of the silicon nitride ceramic substrate.

The invention discloses an orthogonally stacked double-sided cooling power module and a preparation method thereof. The orthogonally stacked double-sided cooling power module comprises a decoupling capacitor, a copper-clad ceramic substrate, a power chip and a metal cushion block, the metal cushion blocks and the power chips are stacked and connected layer by layer in a metal cushion block-power chip-metal cushion block mode to form a series chipset, and the copper-clad ceramic substrate is connected with the two sides of the metal cushion blocks in the series chipset and is perpendicular to the power chips. According to the invention, through the cooperative effect of orthogonal stacking packaging and double-face cooling of the double copper cushion blocks, the electrical and thermal performance of the cooling power module is cooperatively optimized, the parasitic inductance of the power module is significantly reduced, the transient over-current supporting capability is significantly improved, and the packaging technology has good flexibility and is suitable for large-scale production. The method is suitable for power modules of different packaging types.

An active metal brazing substrate material and a method for producing the same are provided. The active metal brazing substrate material includes a ceramic substrate layer, a first brazing layer, a second brazing layer, and a conductive metal layer that are sequentially stacked. The first brazing layer includes a first metal composite material, which includes silver (Ag), copper (Cu), and a first active metal element. Based on a total weight of the first metal composite material being 100 parts by weight, a silver content is not less than 50 parts by weight. The second brazing layer includes a second metal composite material, which includes aluminum (Al), copper (Cu), and a second active metal element, but does not contain silver. Based on a total weight of the second metal composite material being 100 parts by weight, an aluminum content is not less than 40 parts by weight.

The invention discloses a manufacturing process of a circuit board structure of aviation equipment, which comprises the following steps of: providing a carbon fiber reinforced ceramic substrate, after desizing process treatment, coating high-temperature ceramic slurry on the carbon fiber reinforced ceramic substrate, forming a high-temperature-resistant base material layer through vacuum drying, coating an electromagnetic shielding material on the surface of the base material layer, and forming the circuit board structure of the aviation equipment. Designing a circuit pattern, and transferring the circuit pattern to the electromagnetic shielding layer through a laser cutting or etching process to form a circuit layout; wiring the copper alloy film according to the circuit pattern, and combining the copper alloy film with the polymer composite material middle layer through a lamination process to form an electrical connection layer; coating the surface of the circuit board with a resin material, performing curing treatment, mounting a metal connecting piece in the edge area of the circuit board, performing connection in a crimping manner, then performing a 3D printing process, and printing connecting points on the surface of the circuit board; the circuit board provided by the invention has the advantages of high temperature resistance, electromagnetic interference resistance, support and excellent protection performance.

The invention discloses a high-purity aluminum oxide ceramic substrate capable of being used for a Ka wave band and a preparation method of the high-purity aluminum oxide ceramic substrate, and relates to the field of ceramic substrates and preparation methods of the ceramic substrates. The ceramic substrate material is composed of a main body aluminum oxide and a composition, and the composition comprises a doping modifier and a part of aluminum oxide; the ratio of the doping modifier to part of aluminum oxide is 1: n; wherein 2 < = n < = 8; the composition accounts for less than or equal to 0.4% of the total amount of the ceramic substrate raw materials. According to the aluminum ceramic material, the doping modifier and part of aluminum oxide are pre-synthesized into a composition, the probability that aluminum oxide powder particles make contact with composition particles is increased, and the doping modification effect is improved. 1 part of doping modifier and n parts of aluminum oxide are uniformly mixed and pre-synthesized into a composition, so that the doping modification effect and the cooling effect are improved, and the combining capacity of composition particles and aluminum oxide particles in the subsequent synthesis process is enhanced.

The invention belongs to the technical field of integrated circuit manufacturing and filters, and discloses a double-layer stacked microstrip band-pass filter. The filter comprises an upper metal layer, an upper substrate, a middle metal layer, a lower substrate and a lower metal layer which are sequentially arranged from top to bottom. A double-layer stacking method is adopted, the multi-order resonators are placed on the lower glass substrate, the upper metal layer, the side wall metalized through holes and the lower metal layer form a metal cavity structure, and the size of the filter is remarkably reduced; the multi-order resonator adopts a stepped impedance resonator structure, so that a low-frequency end zero point generated by high-order mode coupling can be effectively used, and better out-of-band rejection can be obtained; a ceramic substrate or a glass substrate with a relatively large dielectric constant is selected, so that the high-frequency loss of a passive device is remarkably reduced, and the quality factor is improved.

The invention belongs to the technical field of grinding and polishing, and particularly relates to an aluminum nitride ceramic polishing process. The polishing process comprises the following steps that the aluminum nitride ceramic substrate is placed on a polishing pad, and polishing liquid is added for polishing; the polishing solution is prepared from the following components in parts by weight: 15-20 parts of a composite abrasive, 2-4 parts of an oxidant, 8-10 parts of a functional compound and 60-70 parts of water are mixed into a solution, and the pH value of the solution is adjusted to be 4-4.5 by using organic acid; the polishing solution provided by the invention has good suspension stability and antibacterial performance, the polishing solution is used for polishing the aluminum nitride ceramic substrate, the polishing rate is high, the polishing effect is good, and the aluminum nitride ceramic substrate which is small in surface roughness and free of scratches can be obtained.

The invention relates to the technical field of ceramic substrates, and provides a low-dielectric-constant multilayer ceramic substrate and a preparation method thereof. The low-dielectric-constant multilayer ceramic substrate comprises the following components in parts by weight: 100 parts of aluminum oxide, 4-8 parts of a sintering aid, 8-16 parts of silicate, 3-6 parts of copper oxide, 3-5 parts of a dispersing agent, 6-12 parts of a binder and 70 parts of a solvent, the silicate comprises magnesium aluminum silicate and zirconium silicate in a weight ratio of (1.5-9): 1. According to the technical scheme, the problem that the bending strength of the multi-layer ceramic substrate is poor in the prior art is solved.

The invention belongs to the technical field of low-temperature co-fired ceramics, and particularly relates to a high-density and high-strength LTCC (Low Temperature Co-fired Ceramic) raw ceramic chip as well as a preparation method and application thereof. The preparation method comprises the steps that stacking phase powder and filling phase powder in raw materials are fully mixed and then subjected to tape casting, the equivalent particle size ratio of the stacking phase powder to the filling phase powder is 1: (0.4-0.8), and the volume ratio of the stacking phase powder to the filling phase powder is 1: (0.15-0.45). The high-density and high-strength LTCC raw ceramic chip is used for preparing a low-temperature co-fired ceramic substrate. According to the technical scheme provided by the invention, the raw ceramic chip raw materials can be tightly arranged after being fully mixed through the inorganic powder with different particle sizes and matching the dosage ratio of the inorganic powder to the raw ceramic chip raw materials, and low porosity in the sintered substrate is realized on the basis of not changing the substrate raw material composition or crystal whiskers; and therefore, the bending strength is improved, and other properties are not influenced.

The invention provides a low-stress double-sided cooling power module and a manufacturing method thereof, the low-stress double-sided cooling power module comprises a first copper-clad ceramic substrate and a second copper-clad ceramic substrate which are oppositely arranged, the first copper-clad ceramic substrate is provided with at least two power chips, and two sides of each power chip are provided with C-shaped auxiliary support column connecting layers; and the lower surface of the second copper-clad ceramic substrate is provided with an inverted metal buffer cushion block which is arranged opposite to each power chip. The inverted metal buffer cushion block comprises a connecting frame with a groove, an auxiliary supporting column connected with the connecting frame is arranged at the position, corresponding to the auxiliary supporting column connecting layer, of the connecting frame, a protruding quadrangular frustum pyramid heat conduction structure is arranged in the groove of the connecting frame, and the bottom of the inverted quadrangular frustum pyramid heat conduction structure is connected with a power chip. The inverted metal cushion block constructs an optimized heat conduction path for the power module, so that heat generated in the working process of the chip can be efficiently conducted to an external heat dissipation environment through the metal cushion block, and the junction temperature of the chip is effectively reduced.

To provide a ceramic board which has good heat dissipation, and in which an integration density is high.SOLUTION: According to an embodiment, the present invention discloses a manufacturing method of an ultrathin high-density multilayer interconnection ceramic board, containing steps of: preparing a ceramic wafer, performing a laser punching to the ceramic wafer, and forming a via hole; performing a vacuum magnetron sputtering to the ceramic wafer, and forming a seed titan layer and a copper layer onto a front surface of the ceramic wafer and on a wall of the via hole by the sputtering; manufacturing a ceramic double-layer core plate; manufacturing a multilayer substrate; manufacturing a vertical interconnection multilayer substrate; and manufacturing a high-end multilayer HDI ceramic board. The multilayer ceramic plate manufactured in the above mentioned processing can be easily processed as compared with LTCC and HTCC, and an energy consumption amount for the processing is deteriorated. A heat conductivity of a finished product is improved. A wiring is more accurate; a conductive resistance is low; and a signal transmission loss is low.SELECTED DRAWING: Figure 1

The invention provides a manufacturing method of a space converter of a probe card. The manufacturing method comprises the following steps: sequentially forming a titanium layer and a first copper layer on the upper surface of a ceramic substrate; forming a first circuit pattern on the upper surface of the first copper layer; forming a second copper layer on the first circuit pattern; removing the titanium layer and the first copper layer except the titanium layer below the second copper layer; sequentially forming a nickel layer and a first gold layer on the upper surface of the structure; forming a polyimide layer on the upper surface of the structure; removing the polyimide layer on the upper surface of the target position of the first gold layer to form a second circuit pattern; forming a first nickel-cobalt alloy layer on the second circuit pattern, and then forming a third circuit pattern; forming a second nickel-cobalt alloy layer on the third circuit pattern, and then forming a fourth circuit pattern; forming a second gold layer on the fourth circuit pattern; and removing the photoresist to obtain the space converter. According to the manufacturing method of the space converter of the probe card, the installation position of the probe can be accurately adjusted, and the alignment precision of the probe is improved.

The invention belongs to the technical field of chips, and discloses a vehicle gauge-level SMD chip crystal and a processing method thereof, and the method comprises the steps: forming a gradient doped region on the surface layer of a quartz wafer through an ion implantation technology, and carrying out the recognition of the surface defects of the wafer and the etching of an anchor point groove based on a visual detection system; the etched doped quartz wafer is subjected to micro-electro-mechanical processing, a double-cantilever supporting structure is formed, a three-dimensional electromagnetic shielding layer is constructed on the surface of the wafer subjected to cantilever processing, a ceramic substrate and a metal conducting layer are alternately deposited through an additive manufacturing process, a polyimide-silicon dioxide colloid material is provided, and the three-dimensional electromagnetic shielding layer is formed; gradient distribution of an adhesive layer is realized through a micro-droplet jetting technology, a polyimide-silicon dioxide composite stress buffer layer is coated on a ceramic substrate, alignment and patch packaging are carried out on a processed crystal and a substrate, and through material modification and process collaborative optimization, the method is suitable for application in a high-temperature environment; the reliability problem in the extreme environment of the vehicle gauge is solved, and meanwhile the yield is improved.

The invention relates to the technical field of ceramic substrates, and provides an aluminum oxide high-temperature co-fired multilayer ceramic substrate and a preparation method thereof. The aluminum oxide high-temperature co-fired multilayer ceramic substrate comprises the following raw materials in parts by weight: 80-90 parts of aluminum oxide, 3-6 parts of a reinforcing agent, 2-5 parts of a sintering aid, 85-95 parts of a solvent, 6-12 parts of a binder and 0.5-1.5 parts of a dispersing agent, the reinforcing agent comprises yttrium oxide coated silicon carbide and copper oxide. According to the technical scheme, the problem that the strength of the aluminum oxide high-temperature co-fired multilayer ceramic substrate is insufficient due to long-time high-temperature sintering of a low-viscosity liquid phase in related technologies is solved.

The invention discloses an ultra-miniature patch fuse structure and a production process thereof. A fuse comprises a ceramic substrate, an inner electrode part, a terminal electrode part, a fuse wire part and a covering protection layer. An inner electrode groove is formed in the side wall of the ceramic substrate, and the inner electrode part comprises a first inner electrode and a second inner electrode; the first inner electrode and the second inner electrode are respectively provided with a fuse wire fixing groove. According to the production process, inner electrode grooves are formed in the two ends of a ceramic substrate, a first inner electrode and a second inner electrode are constructed through metallization wall-hanging treatment, a fuse part is inserted into a fuse fixing groove and connected through thermal ultrasonic or hot pressing bonding, and a protection layer is printed and cured to enhance the insulation performance. According to the invention, through cooperation of the fuse wire fixing grooves, accurate limitation and anti-drop protection of fuse wire component connection points are realized, and the structural stability and the electrical connection reliability between the fuse wire component and the first inner electrode and between the fuse wire component and the second inner electrode are improved.

The invention relates to the technical field of ceramic substrates, and provides an efficient heat dissipation multilayer ceramic substrate and a preparation method thereof. Raw materials of the multilayer ceramic substrate comprise the following components in parts by weight: 110 parts of aluminum oxide, 8-16 parts of vanadium pentoxide, 1-3 parts of a dispersing agent, 2-4 parts of a sintering aid, 8-12 parts of a binder, 0.5-2 parts of a plasticizer and 70 parts of water. The aluminum oxide comprises aluminum oxide I and aluminum oxide II in a weight ratio of (4-9): 1; the specific surface area of the aluminum oxide I is 47-76m < 2 > / g, and the specific surface area of the aluminum oxide II is 6.8-8m < 2 > / g. According to the technical scheme, the problem that the fracture toughness of the multi-layer ceramic substrate is poor in the prior art is solved.