2842 results about "Ceramic substrate" patented technology

The invention relates to the technical field of ceramic substrates, and provides a low-dielectric-loss multilayer ceramic substrate and a preparation method thereof. The low-dielectric-loss multilayer ceramic substrate is prepared from, by weight, 90-100 parts of aluminum oxide, 1-3 parts of plasticizer, 3-5 parts of sintering aid, 6-10 parts of binder, 1-3 parts of dispersing agent and 50-60 parts of water, the aluminum oxide is composed of first aluminum oxide and second aluminum oxide, and the first aluminum oxide and the second aluminum oxide are different in form. According to the technical scheme, the problem of high dielectric loss of the multilayer ceramic substrate in the prior art is solved.

The invention relates to the technical field of ceramic substrates, and provides an aluminum oxide multilayer ceramic substrate and a preparation method thereof. The aluminum oxide multilayer ceramic substrate comprises the following raw materials in parts by weight: 80-90 parts of pretreated aluminum oxide, 1-4 parts of a sintering aid, 1-2 parts of a dispersing agent, 6-12 parts of a binder and 85-95 parts of a solvent, the preparation method of the pretreated aluminum oxide comprises the following steps: performing wet ball milling, drying, sintering and crushing on aluminum oxide, manganese sesquioxide, magnesium oxide and zirconium oxide to obtain the pretreated aluminum oxide. According to the technical scheme, the problem that the bending strength of the aluminum oxide multilayer ceramic substrate prepared from the aluminum oxide raw material with the purity of 95% in the related technology is low is solved.

The invention belongs to the technical field of semiconductors, and discloses a SiC power semiconductor module with low parasitic parameters and a preparation method. Comprising a SiC power semiconductor chip, a SiC power semiconductor chip substrate cushion block, a positive electrode power terminal, a negative electrode power terminal, an output power terminal, a positive electrode side middle layer cushion block, a positive electrode side ceramic decoupling capacitor, a positive electrode side substrate middle layer cushion block, a negative electrode side middle layer cushion block, a negative electrode side ceramic decoupling capacitor and a negative electrode side substrate middle layer cushion block. A first copper-clad ceramic substrate, a third copper-clad ceramic substrate, a fourth copper-clad ceramic substrate, a second copper-clad ceramic substrate, a first commutation loop middle copper layer and a second commutation loop middle copper layer; according to the invention, a commutation path is provided for the SiC power semiconductor device by using the middle layer copper of the laminated copper-clad ceramic substrate, the concept of mutual inductance offset of double commutation loops is innovatively introduced, and the parasitic inductance of the module is further reduced.

A microwave oven includes a housing defining an interior cavity, a magnetron positioned within the housing and outside of the interior cavity and a micro-wave antenna in electrical communication with the magnetron and positioned adjacent a lower surface of the interior cavity. The microwave oven further includes a heating plate that includes a glass-ceramic substrate defining at least a portion of the lower surface of the interior cavity. The heating plate further includes a resistive-heating coating applied on a portion of the glass-ceramic substrate and defining at least one open micro-wave transmissive path from the micro-wave antenna to the interior cavity.

The invention discloses a preparation method of a textured silicon nitride ceramic substrate, and belongs to the technical field of ceramic products. Beta-silicon nitride whiskers with the long diameter of 4-15 microns and the short diameter of 1-3 microns are added into silicon nitride ceramic slurry according to the design, and when the whiskers containing beta-silicon nitride pass through a scraper of a casting machine, the whiskers tend to be directionally arranged in the casting direction, so that a textured structure is generated in the silicon nitride ceramic substrate. The textured structure is beneficial to improving the three-point bending strength, the fracture toughness and the thermal conductivity in the horizontal direction of the ceramic substrate.

The invention relates to the technical field of ceramic substrates, and provides a high-toughness multilayer ceramic substrate and a preparation method thereof. Raw materials of the high-toughness multilayer ceramic substrate comprise the following components in parts by weight: 90-95 parts of aluminum oxide, 13-17 parts of a sintering aid, 2-5 parts of a plasticizer, 1-3 parts of a dispersant, 3-5 parts of a binder, 10-12 parts of an aid and 55-65 parts of water, the auxiliaries comprise boron carbide, copper-tin alloy powder and graphene oxide. According to the technical scheme, the problem of poor toughness of the multi-layer ceramic substrate in the prior art is solved.

The present disclosure relates to a ceramic substrate unit and a manufacturing method therefor, which can suppress warpage due to a difference between the volumes of upper and lower metal layers in a ceramic substrate by calculating the volume of the upper metal layer and forming a plurality of grooves in the lower metal layer to have a predetermined volume corresponding to the volume of an upper electrode.

The invention relates to the technical field of ceramic substrates, and provides a bending-resistant multilayer ceramic substrate and a preparation method thereof.The bending-resistant multilayer ceramic substrate is prepared from, by weight, 100 parts of aluminum oxide, 2-4 parts of a sintering aid, 1-2 parts of a plasticizer, 1-2 parts of a reinforcing agent, 1-3 parts of a dispersing agent, 8-12 parts of a binder and 85-90 parts of water; the reinforcing agent comprises tungsten trioxide and cobaltosic oxide. According to the technical scheme, the problem of low bending strength of the multilayer ceramic substrate in the prior art is solved.

The invention discloses an orthogonally stacked double-sided cooling power module and a preparation method thereof. The orthogonally stacked double-sided cooling power module comprises a decoupling capacitor, a copper-clad ceramic substrate, a power chip and a metal cushion block, the metal cushion blocks and the power chips are stacked and connected layer by layer in a metal cushion block-power chip-metal cushion block mode to form a series chipset, and the copper-clad ceramic substrate is connected with the two sides of the metal cushion blocks in the series chipset and is perpendicular to the power chips. According to the invention, through the cooperative effect of orthogonal stacking packaging and double-face cooling of the double copper cushion blocks, the electrical and thermal performance of the cooling power module is cooperatively optimized, the parasitic inductance of the power module is significantly reduced, the transient over-current supporting capability is significantly improved, and the packaging technology has good flexibility and is suitable for large-scale production. The method is suitable for power modules of different packaging types.

The invention discloses a manufacturing process of a circuit board structure of aviation equipment, which comprises the following steps of: providing a carbon fiber reinforced ceramic substrate, after desizing process treatment, coating high-temperature ceramic slurry on the carbon fiber reinforced ceramic substrate, forming a high-temperature-resistant base material layer through vacuum drying, coating an electromagnetic shielding material on the surface of the base material layer, and forming the circuit board structure of the aviation equipment. Designing a circuit pattern, and transferring the circuit pattern to the electromagnetic shielding layer through a laser cutting or etching process to form a circuit layout; wiring the copper alloy film according to the circuit pattern, and combining the copper alloy film with the polymer composite material middle layer through a lamination process to form an electrical connection layer; coating the surface of the circuit board with a resin material, performing curing treatment, mounting a metal connecting piece in the edge area of the circuit board, performing connection in a crimping manner, then performing a 3D printing process, and printing connecting points on the surface of the circuit board; the circuit board provided by the invention has the advantages of high temperature resistance, electromagnetic interference resistance, support and excellent protection performance.

The invention relates to the technical field of ceramic substrates, and provides a low-dielectric-constant multilayer ceramic substrate and a preparation method thereof. The low-dielectric-constant multilayer ceramic substrate comprises the following components in parts by weight: 100 parts of aluminum oxide, 4-8 parts of a sintering aid, 8-16 parts of silicate, 3-6 parts of copper oxide, 3-5 parts of a dispersing agent, 6-12 parts of a binder and 70 parts of a solvent, the silicate comprises magnesium aluminum silicate and zirconium silicate in a weight ratio of (1.5-9): 1. According to the technical scheme, the problem that the bending strength of the multi-layer ceramic substrate is poor in the prior art is solved.

The invention provides a low-stress double-sided cooling power module and a manufacturing method thereof, the low-stress double-sided cooling power module comprises a first copper-clad ceramic substrate and a second copper-clad ceramic substrate which are oppositely arranged, the first copper-clad ceramic substrate is provided with at least two power chips, and two sides of each power chip are provided with C-shaped auxiliary support column connecting layers; and the lower surface of the second copper-clad ceramic substrate is provided with an inverted metal buffer cushion block which is arranged opposite to each power chip. The inverted metal buffer cushion block comprises a connecting frame with a groove, an auxiliary supporting column connected with the connecting frame is arranged at the position, corresponding to the auxiliary supporting column connecting layer, of the connecting frame, a protruding quadrangular frustum pyramid heat conduction structure is arranged in the groove of the connecting frame, and the bottom of the inverted quadrangular frustum pyramid heat conduction structure is connected with a power chip. The inverted metal cushion block constructs an optimized heat conduction path for the power module, so that heat generated in the working process of the chip can be efficiently conducted to an external heat dissipation environment through the metal cushion block, and the junction temperature of the chip is effectively reduced.

To provide a ceramic board which has good heat dissipation, and in which an integration density is high.SOLUTION: According to an embodiment, the present invention discloses a manufacturing method of an ultrathin high-density multilayer interconnection ceramic board, containing steps of: preparing a ceramic wafer, performing a laser punching to the ceramic wafer, and forming a via hole; performing a vacuum magnetron sputtering to the ceramic wafer, and forming a seed titan layer and a copper layer onto a front surface of the ceramic wafer and on a wall of the via hole by the sputtering; manufacturing a ceramic double-layer core plate; manufacturing a multilayer substrate; manufacturing a vertical interconnection multilayer substrate; and manufacturing a high-end multilayer HDI ceramic board. The multilayer ceramic plate manufactured in the above mentioned processing can be easily processed as compared with LTCC and HTCC, and an energy consumption amount for the processing is deteriorated. A heat conductivity of a finished product is improved. A wiring is more accurate; a conductive resistance is low; and a signal transmission loss is low.SELECTED DRAWING: Figure 1

The invention belongs to the technical field of chips, and discloses a vehicle gauge-level SMD chip crystal and a processing method thereof, and the method comprises the steps: forming a gradient doped region on the surface layer of a quartz wafer through an ion implantation technology, and carrying out the recognition of the surface defects of the wafer and the etching of an anchor point groove based on a visual detection system; the etched doped quartz wafer is subjected to micro-electro-mechanical processing, a double-cantilever supporting structure is formed, a three-dimensional electromagnetic shielding layer is constructed on the surface of the wafer subjected to cantilever processing, a ceramic substrate and a metal conducting layer are alternately deposited through an additive manufacturing process, a polyimide-silicon dioxide colloid material is provided, and the three-dimensional electromagnetic shielding layer is formed; gradient distribution of an adhesive layer is realized through a micro-droplet jetting technology, a polyimide-silicon dioxide composite stress buffer layer is coated on a ceramic substrate, alignment and patch packaging are carried out on a processed crystal and a substrate, and through material modification and process collaborative optimization, the method is suitable for application in a high-temperature environment; the reliability problem in the extreme environment of the vehicle gauge is solved, and meanwhile the yield is improved.

The invention relates to the technical field of ceramic substrates, and provides an aluminum oxide high-temperature co-fired multilayer ceramic substrate and a preparation method thereof. The aluminum oxide high-temperature co-fired multilayer ceramic substrate comprises the following raw materials in parts by weight: 80-90 parts of aluminum oxide, 3-6 parts of a reinforcing agent, 2-5 parts of a sintering aid, 85-95 parts of a solvent, 6-12 parts of a binder and 0.5-1.5 parts of a dispersing agent, the reinforcing agent comprises yttrium oxide coated silicon carbide and copper oxide. According to the technical scheme, the problem that the strength of the aluminum oxide high-temperature co-fired multilayer ceramic substrate is insufficient due to long-time high-temperature sintering of a low-viscosity liquid phase in related technologies is solved.

The invention discloses an ultra-miniature patch fuse structure and a production process thereof. A fuse comprises a ceramic substrate, an inner electrode part, a terminal electrode part, a fuse wire part and a covering protection layer. An inner electrode groove is formed in the side wall of the ceramic substrate, and the inner electrode part comprises a first inner electrode and a second inner electrode; the first inner electrode and the second inner electrode are respectively provided with a fuse wire fixing groove. According to the production process, inner electrode grooves are formed in the two ends of a ceramic substrate, a first inner electrode and a second inner electrode are constructed through metallization wall-hanging treatment, a fuse part is inserted into a fuse fixing groove and connected through thermal ultrasonic or hot pressing bonding, and a protection layer is printed and cured to enhance the insulation performance. According to the invention, through cooperation of the fuse wire fixing grooves, accurate limitation and anti-drop protection of fuse wire component connection points are realized, and the structural stability and the electrical connection reliability between the fuse wire component and the first inner electrode and between the fuse wire component and the second inner electrode are improved.

The invention relates to the technical field of ceramic substrates, and provides an efficient heat dissipation multilayer ceramic substrate and a preparation method thereof. Raw materials of the multilayer ceramic substrate comprise the following components in parts by weight: 110 parts of aluminum oxide, 8-16 parts of vanadium pentoxide, 1-3 parts of a dispersing agent, 2-4 parts of a sintering aid, 8-12 parts of a binder, 0.5-2 parts of a plasticizer and 70 parts of water. The aluminum oxide comprises aluminum oxide I and aluminum oxide II in a weight ratio of (4-9): 1; the specific surface area of the aluminum oxide I is 47-76m < 2 > / g, and the specific surface area of the aluminum oxide II is 6.8-8m < 2 > / g. According to the technical scheme, the problem that the fracture toughness of the multi-layer ceramic substrate is poor in the prior art is solved.

The invention relates to the technical field of ceramic materials, and provides a multilayer ceramic substrate and a preparation method thereof, the multilayer ceramic substrate comprises the following raw materials by weight: 100 parts of alumina, 2-3 parts of a flexibilizer, 3-6 parts of a sintering aid, 2-3 parts of a dispersant, 4-8 parts of a binder, 0.5-1 part of an aid, 4-6 parts of polyvinyl alcohol, and 30-35 parts of a solvent; the auxiliary agent is prepared from calcium carboxymethyl cellulose and calcium 2, 5-dihydroxybenzenesulfonate in a weight ratio of 1: (1-3). According to the technical scheme, the problem of poor bending strength of the ceramic substrate in the prior art is solved.

The invention relates to a communication computing power transmitting and receiving system chip based on core particle stacking packaging. The communication computing power transmitting and receiving system chip comprises an organic packaging substrate, programmable radio frequency transceiver core particles, computing power device core particles, programmable logic core particles and a ceramic substrate. The computing power device core particles and the programmable logic core particles are horizontally and adjacently arranged on the device mounting surface of the organic packaging substrate; a pre-buried semi-groove is dug in the second surface of the ceramic substrate, and the programmable radio frequency transceiver core particles are arranged in the pre-buried semi-groove; the ceramic substrate is buckled on the organic packaging substrate, the device mounting surface of the organic packaging substrate is opposite to the second surface of the ceramic substrate, and the ceramic substrate completely covers the arranged programmable logic core particles and the arranged computing power device core particles; a conductive layer is arranged between the ceramic substrate and the organic packaging substrate. The communication computing power transceiving system chip can solve the problems of large occupied space, high signal transmission delay and low heat dissipation efficiency in a traditional packaging scheme, can reduce the size of a fuselage of an unmanned aerial vehicle, and enhances the performance of the unmanned aerial vehicle.

The invention belongs to the technical field of silicon nitride ceramic substrates, and particularly relates to a high-thermal-conductivity and high-breaking-strength silicon nitride substrate and a sintering method and application thereof. In order to simultaneously improve the thermal conductivity and the breaking strength of the existing silicon nitride ceramic substrate and ensure the stability and the consistency of the performance during the production of the silicon nitride substrate, the method comprises the following steps: coating the surface of a silicon nitride ceramic biscuit subjected to tape casting with isolation powder, carrying out nitrogen or air atmosphere glue removal treatment, and then sintering; in the sintering process, the cooling process is optimized, a multi-temperature heat preservation platform is arranged above the liquid phase conversion temperature, grain growth and grain boundary composition of the silicon nitride ceramic are regulated and controlled, grain size distribution of the silicon nitride ceramic is made to be more uniform, the grain boundary structure is made to be more optimized, and the heat conductivity coefficient and breaking strength of the substrate are remarkably improved. Meanwhile, the uniformity of a temperature field in the sintering furnace can be greatly improved through the sintering method, it is ensured that the product can reach the consistent performance standard in different areas, and the stability and reliability of the product are improved.

The invention relates to the technical field of ceramic substrates, and provides a bending-resistant aluminum oxide multilayer ceramic substrate and a preparation method thereof. The bending-resistant aluminum oxide multilayer ceramic substrate comprises the following raw material components in parts by weight: 95-110 parts of aluminum oxide, 3-8 parts of a plasticizer, 6-12 parts of an auxiliary agent, 4-7 parts of a binder, 3-6 parts of a dispersant and 60-70 parts of a solvent, the preparation method of the additive comprises the following steps: A1, adding calcium oxide into ethanol, adding glucose, stirring until the materials are uniformly mixed, and concentrating to obtain a glucose coated material; a2, carrying out annealing treatment on the glucose coated material to obtain a carbon coated material; and A3, uniformly mixing the carbon-coated material with magnesium oxide and titanium dioxide, and carrying out ball milling to obtain the auxiliary agent. According to the technical scheme, the problem of low mechanical property of the aluminum oxide ceramic substrate in the prior art is solved.

The invention relates to the technical field of printed circuit boards, and discloses a circuit board structure and a preparation method thereof, and the circuit board structure comprises a copper seat, the top of which is provided with a first groove; a chip, wherein the chip is arranged in the first groove; the ceramic substrate layer is arranged at the bottom of the copper seat, and the shape of the cross section of the ceramic substrate layer is the same as that of the bottom surface of the copper seat; the copper plate layer is arranged at the bottom of the ceramic substrate layer, and the shape of the cross section of the copper plate layer is the same as that of the cross section of the ceramic substrate layer. The ceramic substrate layer and the copper plate layer are sequentially arranged at the bottom of the copper base, the thermal resistance of the chip during working can be remarkably reduced, the overall heat dissipation performance can be improved, the cross sections of the ceramic substrate layer and the copper plate layer are consistent with the bottom surfaces of the copper base and the copper plate layer in shape, and the layers are high in structural fitting degree, uniform in stress distribution and good in plate thickness consistency after lamination; and the warping problem of the copper seat caused by thermal expansion is effectively reduced.

The invention relates to the technical field of electroplating, and discloses a ceramic substrate through hole electro-coppering hole filling process control method which comprises the following steps: acquiring structural parameters of a target ceramic substrate through hole, optimizing the proportion of a prefabricated electroplating solution to obtain a proportioned electroplating solution, analyzing a composite electroplating medium of the proportioned electroplating solution, and inquiring a pulse current waveform; the copper deposition morphology is monitored, polarization effect coefficients under different current densities are calculated, duty ratio indexes are optimized to score a shaped current sequence, a multi-order electric field is applied to obtain in-hole flow field data, and the copper deposition uniformity is calculated; and performing multi-cycle electroplating-annealing iteration to obtain a copper hole filling structure, testing residual stress, identifying a lattice distortion section, generating a crystallization-annealing curve, and formulating a process optimization scheme according to regulation and control data. According to the invention, the reliability of the through hole electro-coppering filling process can be improved.

The invention discloses an efficient heat dissipation system of a new energy automobile circuit board, and the system comprises a composite heat dissipation substrate which is formed by compounding a ceramic substrate layer, a graphene heat conduction layer and a copper alloy supporting layer through vacuum hot pressing, and the surface of the graphene heat conduction layer is provided with a micron-sized groove array; the dynamic heat dissipation assembly comprises a thermoelectric refrigeration module and a temperature sensor which are embedded in the composite heat dissipation substrate, the thermoelectric refrigeration module is linked with the temperature sensor through a PID controller, and active refrigeration based on temperature rise of the circuit board is achieved; the multi-layer heat dissipation channel comprises a micro-channel and a bionic fin structure, the micro-channel vertically penetrates through the composite heat dissipation substrate, the bionic fin structure covers the surface of the substrate, and the micro-channel is filled with a phase change material and is communicated with an external liquid cooling circulation system; the airflow adjusting module comprises a rotatable flow guide plate and a piezoelectric fan array, the flow guide plate dynamically adjusts the heat dissipation airflow direction according to the vehicle speed, and the frequency response range of piezoelectric fans is larger than or equal to 100 Hz.

The invention relates to the technical field of ceramic substrates, and provides a high-toughness aluminum oxide ceramic substrate and a preparation method thereof, the high-toughness aluminum oxide ceramic substrate comprises the following raw materials by weight: 100 parts of aluminum oxide, 1-3 parts of a plasticizer, 4-6 parts of an auxiliary agent, 4-6 parts of a binder, 1-3 parts of a dispersant, and 55-65 parts of water; the auxiliary agent is composed of an auxiliary agent A and an auxiliary agent B, the auxiliary agent A comprises rare earth oxide, and the auxiliary agent B is composed of molybdenum boride, scandium oxide and zirconium oxide. According to the technical scheme, the problem of low toughness of the aluminum oxide ceramic substrate in the prior art is solved.

The invention relates to the technical field of ceramic substrates, in particular to a ceramic substrate blank powder coating and sintering process. Comprising the following steps: step 1, uniformly stirring boron nitride powder, terpilenol, ethyl cellulose, butyl benzyl phthalate and phosphate, and grinding to obtain coating powder; step 2, printing powder on the surface of the green body by using a silk-screen printing technology to form a powder pattern; a powder coating green body is obtained; step 3, stacking N powder-coated green bodies to obtain laminated green bodies; 4, the laminated green body is subjected to glue discharging sintering and sand blasting in sequence; and obtaining the ceramic substrate.

The invention provides a microwave dielectric ceramic material with a continuously adjustable thermal expansion coefficient, a three-dimensional multi-layer switching substrate and a preparation method of the three-dimensional multi-layer switching substrate, and belongs to the technical field of electronic components. The chemical formula of the microwave dielectric ceramic material with the continuously adjustable thermal expansion coefficient is A < 1-x > B < x > DyOz. According to the microwave dielectric ceramic material provided by the invention, the continuous adjustment of the thermal expansion coefficient can be realized by adjusting the types of the elements and the ratio of the elements, and the microwave dielectric ceramic material also has excellent dielectric properties; the material can be used for preparing a heterogeneous co-fired three-dimensional multilayer ceramic substrate of which the thermal expansion coefficient gradually changes from small to large, the heterogeneous co-fired three-dimensional multilayer ceramic substrate is used as a transfer layer between an integrated circuit chip and a PCB (Printed Circuit Board) support plate, and the expansion coefficient of a surface layer connected with the integrated circuit chip is close to that of the integrated circuit chip; and the expansion coefficient of the bottom layer connected with the PCB support plate is close to that of the PCB support plate, so that the interconnection between the integrated circuit chip and the PCB support plate is realized.

The invention relates to a printed circuit board with a ceramic substrate embedded in a local area and a preparation method of the printed circuit board, and belongs to the technical field of semiconductor devices. The preparation method comprises the following steps: performing surface treatment on the upper surface and the lower surface of the core plate to form the L3 layer and the L4 layer; processing a through groove; sticking an adhesive tape; mounting the power chip module in the through groove; forming a first bonding layer and an L2 layer on the surface of the L3 layer; removing the adhesive tape; forming a second bonding layer and an L5 layer on the surface of the L4 layer; processing a blind hole and filling copper; processing a through hole and metalizing the inner wall; performing surface treatment on the L2 layer and the L5 layer; the ceramic substrate is bonded to the area, corresponding to the power chip module, of the surface of the L5 layer through silver paste and is baked and fixed; forming a third bonding layer and an L1 layer on the surface of the L2 layer; forming a fourth bonding layer and an L6 layer on the surface of the L5 layer; processing a blind hole and filling copper; performing surface treatment on the L1 layer; and resistance welding processing, anti-oxidation treatment and cutting forming are carried out. According to the preparation method, the heat dissipation performance and the voltage tolerance of the printed circuit board can be effectively improved.

The invention relates to the technical field of electronic paste, in particular to copper electrode paste for an NTC thermistor and a preparation method and application of the copper electrode paste. A copper electrode slurry for an NTC thermistor comprises copper powder, an inorganic glass binder, an organic carrier and a dispersant, the inorganic glass binder comprises CuO and NiO, and the organic carrier comprises a polymer thickener. The copper electrode slurry can be coated on the surface of an NTC thermistor ceramic substrate through a silk-screen printing method, can be used as a metallized conductive layer after being sintered in nitrogen, is used for temperature measurement, temperature compensation, temperature control components and the like, and is wide in application. The copper electrode slurry for the NTC thermistor provided by the invention can be sintered in nitrogen at 550-650 DEG C, and has the advantages of wide sintering interval, good sintering appearance, excellent welding performance and strong adhesive force. After sintering, the ohmic contact is good, so that the prepared NTC thermistor can truly reflect the resistance value of a substrate, and the phenomenon of ion migration is avoided.

The invention provides an aerosol generating device and a coil assembly thereof, the aerosol generating device comprises a control assembly, the control assembly transmits an electric signal to the coil assembly through an electric connection part, the coil assembly comprises a ceramic substrate, a conductive heating body and a temperature feedback element, the ceramic substrate defines a heating cavity, and the conductive heating body is arranged in the heating cavity. The heating cavity is used for accommodating an aerosol forming substrate; the conductive heating body is arranged on the ceramic base body, and the conductive heating body heats the aerosol to form a substrate so as to generate aerosol; the temperature feedback element is arranged on the inner side or the outer side of the heating cavity and used for obtaining temperature related information of the conductive heating body and feeding back the temperature related information to the control assembly. The ceramic base body integrates the conductive heating body and the temperature feedback printed circuit, precision of temperature feedback control is achieved, real-time feedback adjustment can be conducted on the coil circuit according to the preset temperature, and stability and precision of the heating process are guaranteed.