466 results about "Thin film circuits" patented technology

A system and method for measuring thermal distributions of an electronic device during operation is disclosed. The system includes an electronic device, a heat sink adjacent to the electronic device and an electrical-insulating layer disposed on the electronic device so as to separate the electronic device and the heat sink. The system further includes a plurality of thermal sensors located on the electrical-insulating layer, each of the plurality of thermal sensors in a different location. The plurality of thermal sensors is located within one or more thin film circuit layers disposed adjacent to the electrical insulating layer. The system further includes a module for receiving thermal information from the plurality of thermal sensors during operation of the electronic device. The system further includes a processor coupled to the module for generating a thermal distribution of the electronic device based on the thermal information received from the plurality of thermal sensors.

A phased array antenna is formed from an array of apertures having walls containing phase shifter devices for phase shifting and beam steering a radiated beam of the phased array antenna. The phase shifter devices are interconnected with an interconnect structure formed from substrate slats that form the walls of the apertures. The substrate slats may be thin film circuitized column slats having a metal substrate, dielectric layers, metal bias/control circuitry, a shielding layer, and circuit terminations to connect to a phase shifter device attached to the substrate slat.

The invention discloses a photocuring and thermocuring conductive adhesive, which is prepared by mixing photosensitive high polymer, diluent monomer, conducting particles, photoinitiator, polymerization inhibitor, epoxy resin, epoxy active diluting agent, latent curing agent and latent promoting agent, grinding the mixture, and stirring and dispersing in a planetary manner. The curing temperature of the product is low, and deep curing can be realized; after being cured, the adhesive has high adhesiveness and high solvent resistance; and the adhering strength is high, the resistivity is low, and the requirements of microelectronic packaging technique for LED chips, liquid crystal materials, glass substrates, thin film circuits, PCB circuit boards and the like can be met.

There is provided a method for forming a continuous thin film circuit pattern with good precision, at low cost and with low environmental burden; an electronic circuit fabricated by the same, and an electronic device including the same.

There are a step for forming a mask layer 2 on a substrate 1; a step for forming an opening pattern in the mask layer 2; a step for forming a thin film 3 on the substrate 1 and on the mask layer 2; and a step for removing, from the substrate 1, the mask layer 2 and a portion of the thin film 3 formed on the mask layer 2; wherein the opening pattern is formed under a dry condition.

A practical operational amplifier circuit is formed using thin film transistors.An operational amplifier circuit is formed by thin film transistors formed on a quartz substrate wherein 90% or more of n-channel type thin film transistors have mobility at a value of 260 cm2/Vs or more and wherein 90% or more of p-channel type thin film transistors have mobility at a value of 150 cm2/Vs or more. The thin film transistors have active layers formed using a crystalline silicon film fabricated using a metal element that promoted crystallization of silicon. The crystalline silicon film is a collection of a multiplicity of elongate crystal structures extending in a certain direction, and the above-described characteristics can be achieved by matching the extending direction and the moving direction of carriers.

In a semiconductor device, re-wiring is provided on a circuit element formation region of a semiconductor substrate. A columnar electrode for connection with a circuit board is provided on the rewiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film. A re-wiring is provided over the ground potential layer with a second insulating film interposed. The ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region. A thin-film circuit element is provided on the second insulating film, and a second ground potential layer is provided as a second barrier layer over the thin-film circuit element with an insulating film interposed. Re-wiring is provided over the second ground potential layer.

To provide a thin film circuit device in which a three-dimensional circuit structure is realized, a thin film circuit device is formed of a first thin film circuit layer and a second thin film circuit layer laminated to each other. The first thin film circuit layer contains a first thin film circuit provided between an underlayer and a protective layer and a lower connection electrode connected to the first thin film circuit and exposed at a part of the bottom surface of the underlayer. The second thin film circuit layer contains a second thin film circuit provided between an underlayer and a protective layer, an upper connection electrode connected to the second thin film circuit and exposed at a part of the top surface of the protective layer, and a lower connection electrode connected to the second thin film circuit and exposed at a part of the bottom surface of the underlayer. The first and the second thin film circuits are bonded to each other so that the lower connection electrode of the first thin film circuit layer is electrically connected to the upper electrode of the second thin film circuit layer.

A thin film circuit module constructed for serial coupling to circuit conductors at printed and transmission line circuits. In one form of equalizer construction, thin film circuit elements are deposited on a supporting substrate and wherein a capacitor plate is defined a circuit resistor. Two connector applications serially couple the equalizer modules to trace conductors of a motherboard connector block and to cylindrical core conductors of a coaxial connector. Other hybrid equalizer constructions provide modules constructed of thin film resistors and pick-and-placed capacitors mounted piggyback to an equalizer module substrate.

The invention provides an IC card in which it is difficult to separate IC chips from the IC card. In accordance with the invention, an IC card formed by laminating a plurality of substrates can include a sensor for identifying an authorized person, a signal processing circuit for processing the identification based on an output from the sensor and a card-shaped card medium containing the sensor and the signal processing circuit. At least the signal processing circuit can include a thin film circuit which is sufficiently thinner than the card medium and contains a material which is dissolvable equally to or more than the card medium.

A thin film circuit substrate is provided with a voice-output-section driving section, formed of a thin film layer on an insulative substrate, for driving a voice output section. An antisurge section, provided on a wiring between the voice-output-section driving section and an output terminal section thereof, includes an antisurge element. When a surge voltage is applied to the wiring, the antisurge element, monolithically formed on the thin film circuit substrate, connects the wiring to the ground so as to pass a current (surge current), generated by the surge voltage applied to the wiring, to the ground. This makes it possible to provide a thin film circuit substrate which is monolithically provided with a function which can protect a circuit section when a voltage exceeding a predetermined range is applied to the wiring linking the circuit section with an input terminal section or an output terminal section.

An integrated chip package structure and method of manufacturing the same is by adhering dies on a metal substrate and forming a thin-film circuit layer on top of the dies and the metal substrate. Wherein the thin-film circuit layer has an external circuitry, which is electrically connected to the metal pads of the dies, that extends to a region outside the active surface of the dies for fanning out the metal pads of the dies. Furthermore, a plurality of active devices and an internal circuitry is located on the active surface of the dies. Signal for the active devices are transmitted through the internal circuitry to the external circuitry and from the external circuitry through the internal circuitry back to other active devices. Moreover, the chip package structure allows multiple dies with different functions to be packaged into an integrated package and electrically connecting the dies by the external circuitry.

An integrated chip package structure and method of manufacturing the same is by adhering dies on a silicon substrate and forming a thin-film circuit layer on top of the dies and the silicon substrate. Wherein the thin-film circuit layer has an external circuitry, which is electrically connected to the metal pads of the dies, that extends to a region outside the active surface of the dies for fanning out the metal pads of the dies. Furthermore, a plurality of active devices and an internal circuitry is located on the active surface of the dies. Signal for the active devices are transmitted through the internal circuitry to the external circuitry and from the external circuitry through the internal circuitry back to other active devices. Moreover, the chip package structure allows multiple dies with different functions to be packaged into an integrated package and electrically connecting the dies by the external circuitry.

A piezoelectric oscillator includes: a piezoelectric resonator element having a piezoelectric substrate and an excitation electrode formed on a surface of the piezoelectric substrate; a semiconductor circuit element provided with an oscillation circuit for oscillating the piezoelectric resonator element and having a first insulating film formed on a principal surface; a package for airtightly housing the semiconductor circuit element and the piezoelectric resonator element; and a protruding section having at least of a thin film circuit component formed on the first insulating film and connected to the oscillation circuit; and a second insulating film formed on the first insulating film and covering the thin film circuit component. In the oscillator, the piezoelectric resonator element is fixed to an upper surface of the protruding section,

The invention provides a method for making deep cut-off ultra-narrow band pass filter. By adopting the method, the effective area and the cut-off of the bandpass filter can be obviously improved and error negative effects can be effectively controlled. The method comprises the following steps of: 1, determining a theoretical film, selecting Ta2O5 as a high-reflectivity material and SiO2 as a low-reflectivity material on the basis of a typical film structure of a multi-cavity optical filter, respectively defining H and L to be the unit optical thickness of the Ta2O5 and the SiO2 on lambda fourth by taking lambda as an operating wavelength of the optical filter, and determining the film structure of the optical filter by using film design software thin film circuit (TFC) Calc on a computer according to performance parameters required by the ultra-narrow band pass filter; 2, making a template control file for automatic control of a coating machine by using the full-automatic coating machine according to the obtained theoretical film structure; and 3, loading selected coating materials in the coating machine and automatically completing the making of the optical filter through a control mode of eccentric monitoring by the coating machine according to a selected template.

A thin-film circuit device includes a substrate and a thin-film circuit layer, disposed on the substrate, having an element region and a low-strength region. The element region includes thin-film elements. The low-strength region extends between an end portion of the thin-film circuit layer and the element region and has a mechanical strength less than that of the surroundings of the low-strength region.

The present invention aims to manufacture a large size semiconductor device with the inter-substrate transcription technology of thin film circuits. Enlargement is enabled by disposing a plurality of second substrates (21) in a tile shape. As the second substrate (21), a print substrate or flexible print circuit having double-sided wiring or multilayer wiring is employed. The plurality of second substrates (21) is driven independently, and the plurality of second substrates (21) is made to mutually overlap, and a drive circuit (23) is disposed at such overlapping portion. Moreover, the plurality of second substrates (21) is made to mutually overlap, and the mutual circuits are connected at such overlapping portion.

A device includes a processor and memory coupled to the processor. The memory is encoded with instructions that are executable by the processor to provide content signals. The device also includes a display screen extendable to present an extended portion comprising display pixels configured to display content using the content signals. The display screen comprises a scroll element which may provide a base substrate on which thin film circuits are fabricated, and may also provide motive force during retraction. The scroll element is attached to a pull bar and the pull bar is attached to an extensible support member that provides support during extension and retraction of the display screen.

Disclosed are a keying structure and a keyboard applying same. The keying structure includes a switch button, a heavy load spring, a switch shell, a striking pillar, a light load spring and a thin film circuit, wherein the switch button is clamped at the upper end of the switch shell, the heavy load spring is arranged underneath the switch button, the striking pillar is arranged within the switch shell, and the striking pillar is arranged under the heavy load spring, the light load spring is arranged underneath the striking pillar and the thin film circuit is arranged underneath the light load spring. During use, the switch button is pressed with a hand and, depressed under pressure, transfers a down force to the heavy load spring; the heavy load spring transfers the down force to the striking pillar, and the striking pillar depresses the light load spring to make the lower part of the striking pillar contact with the thin film circuit, thus making the thin film circuit conduct. The sensitivity of the present invention is high, the invention also has a downward idle motion, improving the feel to the hand for the player, and is low in cost.

The invention provides a keyboard key which can provide good hand feeling. The keyboard key comprises a key cap, a base, a thin-film circuit board, an elastic component and a contact piece, and is characterized in that one end of the elastic component is arranged on the base, and the other end of the elastic component is suspended in the air; the contact piece is arranged on the elastic component; when the keyboard key stays at a free state, the key cap is located at a first position, and a first distance is reserved between the contact piece and the thin-film circuit board; when the key cap moves towards the base from the first position along a first direction, the keycap is pressed against the elastic component until the key cap moves to a second position, and the contact piece is pressed against the thin-film circuit board; and when the key cap continues to move towards the base along the first direction from the second position, the key cap continues to be pressed against the elastic component and further enables the contact piece to have elastic deformation in the first direction until the key cap moves to a third position, and the contact piece continues to be pressed against the thin-film circuit board in the process of moving from the second position to the third position of the key cap.