The invention discloses a narrow-band large-
delay delayer which comprises a
microstrip line and a half-mode substrate integrated
waveguide, the
microstrip line and the half-mode substrate integrated
waveguide are connected after impedance conversion, the half-mode substrate integrated
waveguide forms an ENZ channel, and when the thickness of a substrate of the
microstrip line is equal to that of a substrate of the substrate integrated waveguide, the ENZ channel is connected with the microstrip line. As the thickness of the substrate integrated waveguide is relatively thin, the width of the microstrip line is too thin, and at the moment, the substrate thickness of the microstrip line is set to be greater than the substrate thickness of the half-mode substrate integrated waveguide so as to increase the width of the microstrip line. The microstrip line and the half-mode substrate integrated waveguide are integrated, and when the substrate thickness of the microstrip line is larger than the substrate thickness of the half-mode substrate integrated waveguide, a metalized
blind hole is formed. The narrow-band large-
delay delayer is good in
impedance matching, good in
standing wave and
insertion loss, small in area, large in
delay amount, small in
insertion loss, unlimited in working frequency, capable of working in
millimeter waves or even higher frequency bands, high in integration level and capable of being interconnected with various passive and
active devices.