The invention belongs to the technical field of high-
voltage probe equipment, and particularly relates to an infiltration type ultrahigh-
voltage probe
station which comprises a structural base, a
test probe seat placing platform and a
wafer bearing table moving mechanism installed on the structural base. The
wafer infiltrating and bearing mechanism is installed on the
wafer bearing table moving mechanism, and the wafer infiltrating and bearing mechanism is used for infiltrating and positioning a wafer to be tested. According to the infiltrating type ultrahigh-
voltage probe
station, due to the fact that the connection position of the bowl wall and the bottom of the inner cavity of the insulating pressure-resistant outer bowl is in transition through the smooth arc with the large curvature
radius instead of a right angle, under the
high voltage, an
electric field in the area is evenly distributed,
field intensity concentration at the sharp corner is avoided, and the infiltrating type ultrahigh-voltage probe
station is stable and reliable. The side surface of the high-voltage conductive inner core embedded in the center of the bottom of the insulating and voltage-resistant outer bowl is completely surrounded by the insulating and voltage-resistant outer bowl, so that no
metal edge is exposed in insulating and voltage-resistant oil or air.