222 results about "Charge carrier" patented technology

A structure includes a semiconductor substrate. The structure further includes a first oxide structure disposed above the semiconductor substrate and a second oxide structure disposed above the first oxide structure and configured to form a conductive path at an interface between the first oxide structure and the second oxide structure. The structure additionally includes a conducting structure extending from the interface through the second oxide structure. The conducting structure is configured such that in response to a voltage being applied to the conducting structure, a charge carrier is generated below the second oxide structure along the conductive path.

Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.

A moisture electric generating device comprising: a first electrode and a second electrode; and disposed between the first electrode and the second electrode and a functional layer which releases electrical charge carriers; the functional layer includes at least two sub layers; a first sub layer acting as a moisture reservoir to a second sublayer, to provide moisture to the second sublayer; the second sub layer which produces electrical charge carriers as a function of moisture available from the first sub layer.

The invention relates to a laser arrangement comprising at least two edge-emitting laser ridges, each with an integrated active zone and an output coupling plane. The at least two edge-emitting laser ridges are spatially separated from one another and share a common, and in particular a single-piece, semiconductor layer sequence with a contact region. Each ridge has a contact terminal, particularly on a surface, for supplying charge carriers to the active zone. A support substrate with at least one contact region is electrically coupled and mechanically connected to the contact region of the common semiconductor layer sequence. Furthermore, a heating element is provided, which is applied to a surface consisting of one of the common semiconductor layer sequences and the support substrate, and comprises two contact terminals and a meandering conductor between the two contact terminals.

In embodiments a component includes a semiconductor layer sequence having a p-side semiconductor layer, an n-side semiconductor layer and an active zone located therebetween, wherein the active zone has a multiple quantum well structure including a plurality of quantum barrier layers and quantum well layers, the quantum barrier layers and the quantum well layers being arranged alternately along a vertical direction, wherein the active zone has at least one recess having facets extending obliquely to a main surface of the active zone, the recess being opened towards the p-side semiconductor layer, wherein, at least within the recess, the quantum barrier layers are n-doped and have a non-constant doping profile so that the component is configured to increase transport negatively charged charge carriers, from the n-side semiconductor layer towards the p-side semiconductor layer, based on the non-constant doping profile, and wherein, from the n-side semiconductor layer towards the p-side semiconductor layer, dopant concentrations of the quantum barrier layers gradually increase.

The invention provides a high-gain 4H-SiC ultraviolet position sensitive detector and a preparation method thereof, and relates to the technical field of semiconductor photoelectric detection. A high-gain 4H-SiC ultraviolet position sensitive detector is realized through a first n-type 4H-SiC layer, a p-type 4H-SiC layer and a second n-type 4H-SiC layer, namely, an n +-p-n-structure, and a wide bandgap semiconductor material 4H-SiC is used as a device main body for migration of carriers irradiated by light. The material has the outstanding characteristics of large forbidden band width, high critical displacement energy, high thermal conductivity coefficient, good chemical stability and the like. According to the device structure, by introducing an internal gain mechanism, the photoelectric conversion efficiency and the position resolution ratio under the weak light condition are remarkably improved, and the limitations that an existing silicon-based PSD is large in background noise, and performance attenuation or damage is prone to occurring under the extreme environments of high temperature, intense radiation and the like are effectively overcome.

The present application provides a junctionless transistor, comprising a substrate (100), and a buried oxide layer (110), a core layer (150), and a shell layer (160) sequentially stacked on the substrate (100). The doping concentration of the shell layer (160) is less than the doping concentration of the core layer (150), a gate (170) is provided on the shell layer (160), and the dimension of the shell layer (160) in a first direction parallel to the surface of the substrate (100) is greater than the dimension of the gate (170) in the first direction. Compared with a scenario where the dimension of the shell layer (160) in the first direction is equal to the dimension of the gate (170) in the first direction, in the present application, the dimension of the shell layer (160) in the first direction is increased, so that charge carriers in a channel are less influenced by source-drain electric fields and are controlled almost exclusively by a gate electric field. During device operation, due to the low doping concentration or absence of doping in the shell layer (160), the charge carrier mobility is high, and therefore, the device can have a lower off-state current and a higher on-state current, thereby improving the device performance.

A kind of lead-free perovskite hemispherical photodetector, preparation method and its application in single-pixel lensless color imaging belong to the field of image processing technology.The detector is composed of chromium electrode layer, electron transport layer, perovskite layer, hole transport layer and metal electrode layer from inside to outside on the spherical surface of hemispherical transparent substrate.The perovskite obtained by the application has strong lead-free and excellent stability, outstanding charge carrier transport capacity, high collection efficiency and strong weak light sensing ability.The application uses perovskite for color imaging, directly converts optical signal into electrical signal, has high sensitivity, shows excellent performance with linear dynamic response range of 146dB, and has the advantages of uniform response capacity and uniform thickness.The halide perovskite used by the application has low cost, short preparation time, does not contain toxic element lead, improves the application range of perovskite detector, and reduces the manufacturing cost and time cost of perovskite detector.

The invention belongs to the technical field of detector preparation, and particularly discloses a preparation method of a B-site cation doped perovskite X-ray detector and a product. Comprising the following steps: respectively preparing a bottom-layer precursor solution SL with low doping concentration of B-site cations and a top-layer precursor solution SH with high doping concentration of B-site cations; firstly blade-coating the bottom-layer precursor solution SL on a base, then blade-coating the top-layer precursor solution SH on the surface of the base in a laminated manner to form a wet mold with a B-site cation longitudinal concentration gradient, and introducing a 2D organic cation solution into the surface of the wet mold to perform an in-situ reaction so as to construct a 2D / 3D perovskite heterostructure; and carrying out segmented annealing crystallization on the wet mold constructed with the 2D / 3D perovskite heterostructure to obtain a compact gradient doped perovskite thick film, and then preparing a metal electrode on the surface of the gradient doped perovskite thick film. According to the invention, doped ions adjust an energy band structure, the effective quality of carriers is reduced, and the mobility is improved, so that the photo-generated current response and the signal-to-noise ratio are improved.

An electrical device comprising a capacitor for high voltage applications and a method for manufacturing the same are provided. The invention relates to an electrical device (100) comprising a capacitor for high voltage applications and a method for manufacturing the same. In particular, the proposed electrical device (100) comprises a capacitor comprising: - a bottom electrode (110) comprising a semiconductor substrate (111), - a dielectric (120) extending conformally on the bottom electrode (110), - a top electrode (130) on the dielectric (120), wherein the substrate (111) comprises: - a first region (113) of a first doping type extending upwardly from a bottom surface (111-BS) of the substrate to a top surface (111-TS) of the substrate, - a second region (114) of a second doping type having opposite charge carriers compared to the first doping type and extending downwardly from the top surface (111-TS) of the substrate to a given depth (111-D).

This invention discloses an MSM interdigitated wideband ultraviolet photodetector and its fabrication method, belonging to the field of semiconductor technology. The detector includes: a substrate; an AlN nucleation layer on the substrate surface; a heterostructure on the surface of the AlN nucleation layer away from the substrate, wherein the heterostructure includes GaN, GaON, and Ga2O3 layers stacked sequentially from bottom to top; and interdigitated electrodes on the surface of the Ga2O3 layer away from the substrate. This invention introduces a GaON layer between the Ga2O3 and GaN heterojunctions. This GaON layer acts as a lattice buffer layer, effectively releasing the lattice mismatch stress between Ga2O3 and GaN, significantly improving the interface quality of the heterojunction, and enhancing the separation and collection efficiency of charge carriers, thus significantly improving the overall performance of the MSM interdigitated ultraviolet photodetector.

This invention relates to the field of solid-state battery technology, and particularly to a composite solid-state electrolyte material, its preparation method, and its application. The composite solid-state electrolyte material contains a crystalline phase substance with the general chemical formula: B%A a RE b X 1 c D g +C%A d M e X 2 f D h Where A represents charge carriers; RE represents rare earth elements; M represents metallic elements; X represents... 1 X 2 D is a halide anion; A is an anion doping element or group; a RE b X 1 c D g and A d M e X 2 f D h It is a crystalline phase substance; B% is A a RE b X 1 c D g The mass fraction of the composite solid electrolyte material; C% is A d M e X 2 f D h The mass fraction of the composite solid electrolyte material is defined as follows: 0 ≤ a ≤ 3, 0 < b ≤ 1, 0.5 < c ≤ 12, 0 < d ≤ 5, 0 < e ≤ 2, 1 < f ≤ 20, 0 ≤ g ≤ 4, 0 ≤ h ≤ 5; 85 < B + C < 98, 10% < B% ≤ 85%; 10% < C% ≤ 85%, 0.2 ≤ C / B ≤ 10. The composite solid electrolyte material of this invention includes crystalline and amorphous phase components, giving it high ionic conductivity. The use of moisture-resistant non-metallic halide components instead of traditional halides and oxyhalides in the raw materials also provides it with good air stability.

Device for controlling at least one light-emitting diode (LED1) to generate short light pulses (LP),- with an H-bridge (H) consisting of a first half-bridge (HB1: T1, T2) with a first transistor (T1) and a second transistor (T2) and a second half-bridge (HB2: T2, T3) with a third transistor (T3) and a fourth transistor (T4),- wherein the H-bridge (H) is controlled by a control unit (ST) and- wherein the H-bridge (H) can be operated by the control unit (ST) in pulsed mode (GPB) and in quasi-continuous mode (QDB) and- wherein the first half-bridge (HB1: T1, T2) is supplied with electrical energy from a first positive supply voltage (VCC1) and a first negative supply voltage (GND1) and- wherein the second half-bridge (HB2: T3,T4) is supplied with electrical energy from a second positive supply voltage (VCC2) and a second negative supply voltage (GND2) and- wherein the light-emitting diode (LED1) is connected with its cathode (K) to the output of the first half-bridge (HB1: T1, T2) and- wherein the light-emitting diode (LED1) is connected with its anode (A) to the output of the second half-bridge (HB2: T3, T4) and- wherein the first positive supply voltage (VCC1) and the second positive supply voltage (VCC2) can be equal and- wherein the first negative supply voltage (GND1) and the second negative supply voltage (GND2) can be equal and- wherein the light source, in particular the one or more light-emitting diodes (LED1), represents the load of the H-bridge (H) between the output of the first half-bridge (HB1: T1, T2) and the output of the second half-bridge (HB2: T3, T4) and- wherein the control device (ST) is designed to operate in pulsed mode (GPB) a “PAn” condition,in which a forward voltage in the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained by the H-bridge (H) for longer than a turn-on time (τpp), and- wherein the control device (ST) is designed so that in pulsed operation (GPB) a "PAus" state, in which a reverse voltage against the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained by the H-bridge (H) for longer than a clearing time (τpn), and- wherein the clearing time (τpn) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1), and- wherein the turn-on time (τpp) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1).

The invention concerns an optoelectronic device comprising a hole injection channel with inclined sidewalls extending through the active layer and an underlying first n-doped layer, such that charge carriers from a second p-doped layer arranged above the active layer are injected both vertically and laterally into the underlying active layer. Improved mobility of holes and a resultant higher rate of recombination results in improved quantum efficiency. The dimensions and location of the hole injection channel are controllable, allowing greater uniformity of performance. A method of manufacturing such an optoelectronic device based on an epitaxial lateral overgrowth process and an optoelectronic arrangement comprising such optoelectronic devices are also disclosed.

In one aspect, a field-effect transistor device includes: a semiconductor layer of a wide-bandgap semiconductor layer, the semiconductor layer comprising a source region, a drain region and a floating body region between the source region and the drain region; a first gate and a second gate arranged along the floating body region of the semiconductor layer, wherein the first gate is arranged at a first side of the semiconductor layer and the second gate is arranged at a second side of the semiconductor layer, opposite the first side; and a charge storage island arranged along the floating body region in contact with the second side of the semiconductor layer such that the charge storage island is arranged between the floating body region and the second gate. The charge storage island is configured to define a potential well for charge carriers attracted from a channel.

This invention provides a bidirectional transient voltage suppressor with low dynamic resistance and high surge capability, comprising: a heavily doped semiconductor substrate of a first conductivity type; a first epitaxial layer disposed on the substrate; a conduction modulation buried layer disposed on the first epitaxial layer; a second epitaxial layer disposed on the conduction modulation buried layer; a heavily doped first conductivity type region disposed on the second epitaxial layer; a first electrode disposed on the front side of the heavily doped first conductivity type region and a second electrode disposed on the back side of the substrate; the conduction modulation buried layer is disposed inside the double epitaxial body region and is configured to form a high-concentration conductivity modulation region of charge carriers under transient high current impact conditions, forming a body region-dominated conduction path between the first epitaxial layer and the second epitaxial layer, so that the conduction current changes from concentrated conduction in the PN junction region to a laterally extended and planar distributed overall conduction mode within the body region, thereby reducing the dynamic resistance of the device and improving the surge carrying capacity of the device.

The invention discloses a passivation solution and application thereof, a passivation layer and a preparation method and application thereof, and a perovskite solar cell, and relates to the technical field of perovskite solar devices, the passivation solution is used for passivating a perovskite light absorption layer of the perovskite solar cell, and comprises acetylsalicylic acid; acetylsalicylic acid is adopted as the main component of the passivation solution to passivate the perovskite light absorption layer of the perovskite solar cell, carboxyl and ester groups in the molecular structure of acetylsalicylic acid both have lone pair electrons, and have strong coordination with uncoordinated Pb < + > defects on the surface of the perovskite light absorption layer, so that the deep energy level defects are effectively passivated, and the perovskite light absorption layer of the perovskite solar cell is passivated. And non-radiative recombination of current carriers is reduced. A benzene ring structure in acetylsalicylic acid molecules forms a compact and hydrophobic protective layer on the surface of the perovskite light absorption layer through pi-pi interaction, and erosion of moisture and oxygen in a solvent and an external environment in the subsequent processing process is effectively blocked, so that the environmental stability of the perovskite solar device is remarkably improved.

A near-infrared radiation detector comprises: a substrate comprising a semiconductor; a substrate electrode formed in contact with the substrate; an active layer formed over the substrate, the active layer comprising a ferroelectric material; and an active layer electrode formed in contact with the active layer and substantially transparent to near-infrared radiation. The detector is operable without applied external bias so that, when near-infrared radiation is incident on the detector, charge carriers are generated by a photovoltaic effect in the substrate / active layer heterojunction and a temperature gradient is generated in the active layer, providing a pyro-phototronic current signal indicative of the near-infrared radiation incident on the detector. Also disclosed is a corresponding method of detecting near-infrared radiation.

A complementary field-effect transistor (CFET) circuit with a direct vertical connector and a method for manufacturing the same are disclosed. In one aspect, a semiconductor structure includes: a first field-effect transistor (FET) of a first charge carrier type, the first field-effect transistor (FET) including a first source / drain (S / D) region (412b) and a second source / drain (S / D) region (412a) and one or more channels (408b), the one or more channels being electrically connected to the first S / D region and the second S / D region through a first gate structure; a second FET of a second charge carrier type, the second FET being disposed above the first FET in the Z direction and including a third S / D region (414b) and a fourth S / D region (414a) and one or more channels (408a), the one or more channels being electrically connected to the third S / D region and the fourth S / D region through a second gate structure; and a vertical connector (420) extending in the Z direction from the top surface of the first S / D region (412b) to the bottom surface of the third S / D region (414b) and electrically coupling the first S / D region to the third S / D region.

This invention proposes a velocity-controlled graphene non-reciprocal near-field thermal radiation measurement device and method, belonging to the fields of nanoscale thermal management and photonics technology. A first graphene plate and a second graphene plate are placed parallel to each other in a high-vacuum cavity, with a nanoscale vacuum gap between them. A macroscopic displacement platform is connected to the first graphene plate to control its macroscopic movement velocity along the interface direction. A precision DC power supply is connected to the second graphene plate to inject current to induce microscopic drift velocity of its internal charge carriers. A high-precision temperature sensor is in contact with both graphene plates to monitor their temperature. A near-field heat flux meter is located on the back side of the second graphene plate to measure the radiative heat flux passing through the gap. A calculation and control unit is connected to the macroscopic displacement platform, the precision DC power supply, the high-precision temperature sensor, and the near-field heat flux meter to coordinate and control the velocity parameters and collect and process heat flux data.

The invention relates to an electromagnetic radiation detector, comprising an absorber configured to absorb electromagnetic radiation, a MOS-FET type transistor thermally coupled to the absorber, and a control circuit. The transistor comprises a source and a drain doped with a first type of conductivity, a channel, and a gate electrically isolated from the channel by a gate dielectric layer of the transistor. The control circuit is electrically connected to the source, the drain, and the gate, and configured to apply an electrical potential difference between the gate and the source less than or equal to a threshold voltage of the transistor. The gate is made of silicon doped with a second type of conductivity opposite to the first type of conductivity, with a majority charge carrier concentration less than or equal to 10¹⁹ cm⁻³. The gate dielectric layer has a thickness less than or equal to 50 nm. (See Figure 1A for abbreviations.)

An electrostatic spray nozzle assembly is described that includes an induction ring and a fluid tip. The induction ring generates an electrical field for inducing an electrical charge on droplets of a feedstock liquid from the fluid tip that pass through an opening of the induction ring. The induction ring is electrically coupled to an electrical induction field source via a first conductive path comprising at least an electrically conductive pliable structure, such as a stainless steel spring. Feedstock flowing through the fluid tip is electrically coupled to a charge carrier source via a second conductive path provided by at least a conductive surface of a fluid tube coupled to the fluid tip. The first conductive path and the second conductive path are electrically isolated by an insulating barrier.

The invention belongs to the technical field of semiconductor devices, and particularly relates to fragile material conveying equipment, in particular to a perovskite glass substrate feeding carrier and a using method thereof. The perovskite glass substrate feeding carrier is configured to transport a carrier plate carrying a glass substrate and comprises a tongue assembly and a carrier body, the tongue assembly is configured to be at least partially capable of stretching into the inner space of the carrier body and completely move out of the inner space of the carrier body, and the carrier body is configured to move in the vertical direction; the carrier comprises a frame, a supporting block and a carrier vertical displacement piece. According to the invention, no interaction behavior with the upper surface of the glass substrate is generated in the whole feeding process, stable and impact-free transfer of the glass substrate is realized, and the risk of scratching and cracking of the glass substrate is obviously reduced. And a plurality of pairs of supporting blocks are arranged in the carrier, so that a plurality of carrier plates loaded with the glass substrates can be accommodated at one time, and batch transportation is realized.

The invention discloses a method for monitoring metal pollution in an ion implantation process by using PFG and a PFG metal pollution monitoring system of an ion implanter. The method comprises the following steps: providing a P-type semiconductor wafer, and carrying out ion implantation and annealing treatment on the P-type semiconductor wafer; adopting a plasma gun as an electron source to neutralize positive charges on the surface of the P-type semiconductor wafer in ion implantation treatment; and measuring the diffusion length of a carrier of the P-type semiconductor wafer, calculating the service life of the carrier according to the diffusion length, and outputting a PFG metal pollution degree result. The SPV method is adopted, and the service life of the carriers is calculated by measuring the diffusion length of the carriers in the silicon crystal, so that the PFG metal pollution degree is monitored, the PFG metal pollution condition of the ion implanter can be monitored efficiently and accurately, process parameters are adjusted in time, and the manufacturing quality of semiconductor devices is ensured.

This invention relates to the field of photocatalytic materials technology, disclosing an atomic-level catalytic material, its preparation method, and its application. The method includes mixing nickel chloride with deionized water to form a solution, adding thiourea and mixing thoroughly to obtain a mixture; ultrasonically treating the mixture and continuously stirring until completely dissolved; drying the dissolved solution in an oven to obtain a solid powder; placing the solid powder in a muffle furnace and calcining it in air, then cooling to obtain the atomic-level catalytic material. This atomic-level catalytic material exhibits a nanoflower-like structure, containing nickel elements distributed in single-atom form, without metal clusters. This invention is applied to the photocatalytic carbon dioxide reduction reaction. The introduction of nickel single atoms promotes the separation and migration of photogenerated charge carriers within the material, causing the carbon dioxide reduction reaction pathway to favor methane production, thus improving the selectivity of the target product in the catalytic reaction.

The invention belongs to the technical field of solar cells, and provides a perovskite thin film material, a preparation method thereof and application of the perovskite thin film material in a perovskite solar cell. According to the perovskite thin film material, the perovskite precursor and the dopant are adopted as main raw material components of the perovskite thin film material, the provided perovskite thin film material can be further used for preparing a perovskite solar cell, and the trifluoromethylthio benzene compound dopant can effectively perform defect passivation on defects in crystals and grain boundaries; the non-radiative recombination of carriers is reduced, the energy level of the electron transport layer is matched, and the cell efficiency and the photo-thermal stability are improved.

An electrostatic spray nozzle assembly is described that includes an induction ring and a fluid tip. The induction ring generates an electrical field for inducing an electrical charge on droplets of a feedstock liquid from the fluid tip that pass through an opening of the induction ring. The induction ring is electrically coupled to an electrical induction field source via a first conductive path comprising at least an electrically conductive pliable structure, such as a stainless steel spring. Feedstock flowing through the fluid tip is electrically coupled to a charge carrier source via a second conductive path provided by at least a conductive surface of a fluid tube coupled to the fluid tip. The first conductive path and the second conductive path are electrically isolated by an insulating barrier.

The invention relates to a tin oxide-based target material for preparing a transparent conductive film and a preparation method thereof, the target material takes SnO2 as a matrix, four elements of Ag, Cu, La and Ge are doped, the doped element raw material selects an oxide form, and the components comprise 92%-98.8% by mass of SnO2, 0.5%-3% by mass of Ag2O, 0.3%-2% by mass of CuO, 0.2%-1.5% by mass of La2O3 and 0.2%-1.5% by mass of GeO2. The density of the target material is larger than or equal to 98.5% through multi-element synergistic doping and by means of the carrier contribution effect of Ag and Cu and the lattice stabilization effect of La, the light transmittance of the film prepared through magnetron sputtering in a visible light region is larger than or equal to 85%, the resistivity of the film is smaller than or equal to 5 * 10 <-4 > omega.cm, the adhesion level of a cross test (ASTM D3359) of the film reaches 5B, and the mechanical performance and the chemical stability are excellent; the method is suitable for preparing transparent conductive layers of high-end electronic devices such as flexible displays, solar cells, touch screens and the like.

A synaptic transistor device with a wide spectral response is characterized by comprising: a floating gate layer for capturing light signals of different wavelengths to generate photogenerated carriers; a tunneling layer disposed on the floating gate layer for storing photogenerated carriers generated within the floating gate layer; an active layer disposed on the tunneling layer for transporting charge carriers and photogenerated carriers; source and drain electrodes, two source and drain electrodes symmetrically disposed on the active layer for providing a driving voltage to drive the flow of charge carriers and photogenerated carriers in the active layer, forming a circuit; a substrate disposed at the bottom of the synaptic transistor device for serving as the basis for fabricating the synaptic transistor device; a gate electrode disposed on the substrate for inducing charge carriers in the active layer; and an insulating layer disposed between the gate electrode and the floating gate layer for isolating the gate electrode and the active layer from conduction, wherein the floating gate layer is made of quantum dots with a wide spectral response, and a heterojunction structure is formed between the floating gate layer and the active layer.