497 results about "Charge carrier" patented technology

To reduce thrust required to convey a charged electrical charge carrier by reducing receding electrostatic force acting in the direction pushing back the electrical charge carrier when the electrical charge carrier is conveyed from a low-potential charging source to a high-potential recovery source, and to keep the potential of the electrical charge carrier low during conveyance.SOLUTION: A potential control layer 73 is provided near a charge retention layer 71 of an electrical charge carrier and the potential is set between that of a charge source and the charge retention layer, thereby reducing the electrostatic force applied to the electrical charge carrier and lowering the potential.SELECTED DRAWING: Figure 6

To reduce thrust required for carrying a charge carrier by weakening strong retreating electrostatic force acting on the charged charge carrier, and to increase a conveyable charge amount by weakening potential of the charge carrier being carried, in an electrostatic generator.SOLUTION: A charge control layer remote unit is provided that conducts to a main body of a potential control layer provided in the vicinity of a charge retention layer of a charge carrier and by applying a high voltage of a different polarity of charges charged on a potential control layer body to a charge attraction electrode close to the charge control layer remote unit, charges of the potential control layer main body are moved to a potential control layer remote unit. By increasing potential of the charge carrier and conducting the charge carrier and a recovery electrode, the charges can be safely recovered.SELECTED DRAWING: Figure 10

To provide a method of eliminating charges in a potential control layer when recovering charges simpler and easier than a new charge carrier that can carry high charges at a low potential in an electrostatic generator.SOLUTION: An eliminated charge holder with the same type and without a potential control layer is provided behind a charge carrier 7 in a traveling direction, and is charged by a charging source 8 with a polarity different from and with an equal amount as charges present in a potential control layer 73 of the charge carrier, and the charges are added to the potential control layer 73 to make a charge amount in the potential control layer 73 zero. Thereby, the charges carried in a state in which a potential of the charge carrier 7 is enhanced can be safely recovered in a simple method.SELECTED DRAWING: Figure 3

An example polishing system, such as an electrochemical mechanical polishing (ECMP) system, includes a polishing pad assembly having a polishing pad. The example polishing system includes a bias source. The example polishing system includes a workpiece carrier operable to bring the semiconductor workpiece into contact with the polishing pad. In some implementations, the polishing pad assembly is operable to provide an electrically conductive path for one or more charge carriers to the bias source.

The invention discloses a bulk phase passivation perovskite solar cell and a preparation method and application thereof, and belongs to the field of new energy. The perovskite solar cell comprises a conductive substrate, a hole transport layer, a dielectric layer, a perovskite light absorption layer, an electron transport layer and a top electrode layer which are stacked in sequence, materials of the perovskite light absorption layer comprise (FA < 0.95 > MA < 0.05 >) < 0.95 > Cs < 0.05 > Pb < (I < 0.95 > Br < 0.05 >) < 3 > and guanidyl chloride. According to the perovskite solar cell provided by the invention, a bulk phase passivation technology is adopted, guanidyl chloride is used as a passivator, defect recombination in a perovskite material can be reduced, collection and migration of charge carriers can be enhanced, and the overall performance of the cell, especially the photoelectric conversion efficiency, can be improved.

Performance evaluation and structural optimization methods for a high-power semiconductor laser chip, and a performance evaluation system for a high-power semiconductor laser chip. The performance evaluation method for a high-power semiconductor laser chip comprises: providing a window on an N-side electrode of a chip to be tested (step 1); keeping the chip in an operating state (step 2); allowing a quantum well active region of the chip to generate spontaneous emission, so that the spontaneous emission is imaged outside the chip (step 3); acquiring, by means of a spectrograph, a spectrum of the spontaneous emission outside the chip and obtaining a two-dimensional distribution of a quantum well temperature of the chip in the operating state; and acquiring, by means of a CCD camera, an image of the spontaneous emission imaging outside the chip and obtaining a two-dimensional distribution of charge carriers in the quantum well of the chip in the operating state (step 4). According to the performance evaluation and structural optimization methods for a high-power semiconductor laser chip, the distributions of the temperature and the charge carrier concentration in the quantum well of the chip to be tested in the operating state in which the resolution is freely adjusted can be obtained. Operations of the methods are convenient, and implementation is simple and easy, thereby efficiently improving the accuracy of an evaluation result.

A light emitting device is described. The light emitting device includes a single light emitting photonic crystal having an electroluminescent material disposed in the single light emitting photonic crystal. The single light emitting photonic crystal includes a series of layers of chiral liquid crystalline polymer. The electroluminescent material is localized in one of the layers of chiral liquid crystalline polymer. At least one of the series of layers of chiral liquid crystalline polymer includes a chiral liquid crystalline, charge carrier transporting polymer. The single light emitting photonic crystal further includes a second luminescent material, where energy emanating from the electroluminescent material stimulates the second luminescent material into light emission, and the light emitted by the light emitting device is a mixture of light emitted by the electroluminescent material and light emitted by the second luminescent material.

Disclosed herein is a perforating system including a perforating gun and, more particularly, disclosed are methods and apparatuses using a conical perforating assembly. In one aspect, embodiments relate to a perforating assembly, that includes a charge carrier, a liner disposed in the charge carrier, and an explosive charge disposed between the charge carrier and the liner and supported on the charge carrier, where the liner is supported on the explosive charge, where the perforating assembly has an asymmetric profile.

A self-orienting perforating gun includes an outer housing having a throughbore, a charge carrier positioned in the throughbore of the outer housing, a hub secured directly or indirectly to the outer housing, a bearing secured to each carrier end of the charge carrier wherein the bearing overlies the hub to provide a rotatable relationship between the hub and the charge carrier about a rotational axis within the outer housing, and an eccentric weight coupled to the charge carrier applying an off-axis orienting force to the charge carrier for urging the charge carrier to rotate about the rotational axis toward a predefined orientation relative to the direction of gravity.

A structure includes a semiconductor substrate. The structure further includes a first oxide structure disposed above the semiconductor substrate and a second oxide structure disposed above the first oxide structure and configured to form a conductive path at an interface between the first oxide structure and the second oxide structure. The structure additionally includes a conducting structure extending from the interface through the second oxide structure. The conducting structure is configured such that in response to a voltage being applied to the conducting structure, a charge carrier is generated below the second oxide structure along the conductive path.

Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.

A moisture electric generating device comprising: a first electrode and a second electrode; and disposed between the first electrode and the second electrode and a functional layer which releases electrical charge carriers; the functional layer includes at least two sub layers; a first sub layer acting as a moisture reservoir to a second sublayer, to provide moisture to the second sublayer; the second sub layer which produces electrical charge carriers as a function of moisture available from the first sub layer.

A charge transfer device having a charge transfer channel in a semiconductor substrate. The charge transfer channel is formed by overlap of the possible electrostatic effect of the gates with the conduction layer. A clock generator has a clock frequency of more than 100 MHz which applies changes in potential at the clock frequency to the gates, for transporting charge carriers at the clock frequency from adjacent regions of the overlap between adjacent gates and the conduction layer. The charge transfer channel in the region of one gate has a region of a constriction in which the cross-section in the flow direction decreases, and is arranged at least in the region of the gate upstream of the region of the protuberance or in the regions of the gate upstream of the protuberance and the adjoining gate of the protuberance.

The invention belongs to the technical field of solar cell preparation, and particularly relates to a perovskite solar cell based on selective dissolution solvent treatment and a preparation method thereof. The perovskite cell comprises a conductive substrate, an electron transport layer, a perovskite light absorption layer, a hole transport layer and a metal electrode which are arranged in sequence. A solvent with a selective dissolution characteristic is prepared on the perovskite light absorption layer, and passivation modification is carried out on the perovskite thin film. The invention provides a simple perovskite thin film processing method, complex molecular engineering is not needed, the solvent-based processing effectively passivates the defects of the thin film, improves the quality of the perovskite thin film, establishes a new built-in electric field, forms a more appropriate energy band structure, reduces the recombination of charge carriers, and improves the performance of the perovskite thin film. The separation and transmission capabilities of holes at the surface interface are accelerated, so that the photoelectric property of the perovskite cell is optimized, and the stability is improved.

Methods of manufacturing and devices for a wearable ring device with a battery in the cover of the device are described. The wearable ring device includes an outer shell component with an inner circumferential surface. The battery may extend radially around at least a portion of a circumference of the wearable ring device. In some cases, the wearable ring device may include a battery chamber configured to enclose the battery and charge carriers. One or more structural boundaries of the battery chamber are formed by a cavity within the inner circumferential surface and a battery cover layer coupled to the inner circumferential surface. The wearable ring device may include a printed circuit board (PCB) including a plurality of sensors electrically coupled to the battery. The PCB overlaps with the battery for at least a portion of the circumference of the wearable ring device.

A self-orienting perforating gun includes an outer housing having a throughbore, a charge carrier positioned in the throughbore of the outer housing, a hub secured directly or indirectly to the outer housing, a bearing secured to each carrier end of the charge carrier wherein the bearing overlies the hub to provide a rotatable relationship between the hub and the charge carrier about a rotational axis within the outer housing, and an eccentric weight coupled to the charge carrier applying an off-axis orienting force to the charge carrier for urging the charge carrier to rotate about the rotational axis toward a predefined orientation relative to the direction of gravity.

The invention relates to a laser arrangement comprising at least two edge-emitting laser ridges, each with an integrated active zone and an output coupling plane. The at least two edge-emitting laser ridges are spatially separated from one another and share a common, and in particular a single-piece, semiconductor layer sequence with a contact region. Each ridge has a contact terminal, particularly on a surface, for supplying charge carriers to the active zone. A support substrate with at least one contact region is electrically coupled and mechanically connected to the contact region of the common semiconductor layer sequence. Furthermore, a heating element is provided, which is applied to a surface consisting of one of the common semiconductor layer sequences and the support substrate, and comprises two contact terminals and a meandering conductor between the two contact terminals.

In embodiments a component includes a semiconductor layer sequence having a p-side semiconductor layer, an n-side semiconductor layer and an active zone located therebetween, wherein the active zone has a multiple quantum well structure including a plurality of quantum barrier layers and quantum well layers, the quantum barrier layers and the quantum well layers being arranged alternately along a vertical direction, wherein the active zone has at least one recess having facets extending obliquely to a main surface of the active zone, the recess being opened towards the p-side semiconductor layer, wherein, at least within the recess, the quantum barrier layers are n-doped and have a non-constant doping profile so that the component is configured to increase transport negatively charged charge carriers, from the n-side semiconductor layer towards the p-side semiconductor layer, based on the non-constant doping profile, and wherein, from the n-side semiconductor layer towards the p-side semiconductor layer, dopant concentrations of the quantum barrier layers gradually increase.

The invention discloses an organic composite electrode material, a preparation method thereof and a photo-assisted charging ammonium ion battery. The organic composite electrode material is obtained by compounding 2, 6-di [1-(pyrene-3, 4, 9, 10-tetraformyl diimine)] anthraquinone and reduced graphene oxide, and the organic composite electrode material is prepared by compounding the 2, 6-di [1-(pyrene-3, 4, 9, 10-tetraformyl diimine)] anthraquinone and the reduced graphene oxide. According to the invention, the photo-assisted charging strategy and the aqueous ion battery are combined, the ammonium ions are used as the charge carrier of the aqueous photo-assisted charging battery for the first time by virtue of the rapid dynamic characteristic of the ammonium ions in the aqueous electrolyte, and the advantages of rapid ion transmission of the ammonium ions in the electrolyte are utilized; the problem that the photoelectric reaction rate and the electrochemical oxidation reduction rate in the aqueous photo-assisted rechargeable battery are not matched is solved, collaborative optimization of the photoelectric reaction rate and the electrochemical reaction rate is achieved, the charging and discharging efficiency and the energy utilization rate of the battery are remarkably improved, and a new thought is provided for the next generation of photo-storage integrated battery technology.

The invention provides a high-gain 4H-SiC ultraviolet position sensitive detector and a preparation method thereof, and relates to the technical field of semiconductor photoelectric detection. A high-gain 4H-SiC ultraviolet position sensitive detector is realized through a first n-type 4H-SiC layer, a p-type 4H-SiC layer and a second n-type 4H-SiC layer, namely, an n +-p-n-structure, and a wide bandgap semiconductor material 4H-SiC is used as a device main body for migration of carriers irradiated by light. The material has the outstanding characteristics of large forbidden band width, high critical displacement energy, high thermal conductivity coefficient, good chemical stability and the like. According to the device structure, by introducing an internal gain mechanism, the photoelectric conversion efficiency and the position resolution ratio under the weak light condition are remarkably improved, and the limitations that an existing silicon-based PSD is large in background noise, and performance attenuation or damage is prone to occurring under the extreme environments of high temperature, intense radiation and the like are effectively overcome.

The present application provides a junctionless transistor, comprising a substrate (100), and a buried oxide layer (110), a core layer (150), and a shell layer (160) sequentially stacked on the substrate (100). The doping concentration of the shell layer (160) is less than the doping concentration of the core layer (150), a gate (170) is provided on the shell layer (160), and the dimension of the shell layer (160) in a first direction parallel to the surface of the substrate (100) is greater than the dimension of the gate (170) in the first direction. Compared with a scenario where the dimension of the shell layer (160) in the first direction is equal to the dimension of the gate (170) in the first direction, in the present application, the dimension of the shell layer (160) in the first direction is increased, so that charge carriers in a channel are less influenced by source-drain electric fields and are controlled almost exclusively by a gate electric field. During device operation, due to the low doping concentration or absence of doping in the shell layer (160), the charge carrier mobility is high, and therefore, the device can have a lower off-state current and a higher on-state current, thereby improving the device performance.

The invention relates to the technical field of MOS (Metal Oxide Semiconductor) semiconductors, and discloses a SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device with a shallow P + structure, which comprises a drain electrode, a grid electrode, a grid oxide layer and a semiconductor epitaxial layer, the semiconductor epitaxial layer comprises an N substrate layer, an N drift layer, a side P + layer, an N well layer and a P well layer, a groove is etched in the surface of the semiconductor epitaxial layer, the source electrode is embedded in the semiconductor epitaxial layer through the groove, and the P well layer is embedded in the side P + layer. The section height of the source electrode is the same as that of the semiconductor epitaxial layer; a lower covering P + layer is arranged in the N drift layer and located below the P well layer, and the lower covering P + layer is in contact with the side P + layer. Charge carriers can be guided to flow along a more effective path through the low-doped N layer, the current crowding effect is reduced, the structure is beneficial to enhancing the conductivity modulation effect, low on-resistance can be maintained under the high-voltage condition, and the low-doped N layer can help to homogenize electric field distribution especially in high-voltage application.

The invention relates to the technical field of photocatalysts, and particularly discloses modified bismuth molybdate as well as a preparation method and application thereof. The preparation method comprises the following steps: preparing a homogeneous solution A containing a bismuth source; sO4 < 2-> and a molybdenum source are dispersed in a solvent according to the molar mass ratio of 1: 1-1: 10, and a homogeneous solution B is obtained; uniformly mixing the homogeneous solution A and the homogeneous solution B to obtain a solution C; and carrying out a hydrothermal method on the solution C to obtain the modified bismuth molybdate. By doping SO4 < 2-> into bismuth molybdate, the physicochemical properties of bismuth molybdate are optimized from multiple aspects, the photocatalytic activity of bismuth molybdate is improved, and excellent performance is achieved in the aspect of photocatalytic degradation of tetracycline in actual wastewater. The prepared modified bismuth molybdate not only can efficiently utilize visible light, but also is rich in oxygen vacancies on the surface, has high specific surface area, strong adsorbability and efficient photon-generated carrier separation efficiency, shows strong redox activity, and remarkably promotes pollutant degradation.

The invention relates to a load carrier (1) comprising a container part (2) designed to receive components and a lid (3) which can be releasably locked in a closed position (5) by means of at least one locking mechanism (4), and the locking mechanism (4) can be switched between an unlocked state and a locked state (6). The unlocked state of the locking mechanism (4) can be provided by an unlocking configuration of the locking mechanism (4), and the locked state (6) of the locking mechanism (4) can be provided by at least two locking configurations of the locking mechanism (4).

A perforating gun is disclosed with shaped charges at a preferential orientation. An example includes a gun body and a charge carrier disposed within the gun body. The charge carrier defines a longitudinal carrier axis and has a plurality of axially-spaced charge mounting locations. A plurality of charges are each pivotally mounted to the charge carrier at one of the respective charge mounting locations about a charge pivot axis transverse to the longitudinal carrier axis. The charges may preferentially align in response to gravity so their orientation remains constant throughout a range of inclination of the wellbore.

In one embodiment, the semiconductor component (1) comprises: - a gate electrode (33), - a first semiconductor region (21) of a first conductivity type on a top side (20) of a semiconductor body (2), - a plug region (24) of a second conductivity type, - a first electrode (31) which electrically contacts the first semiconductor region (21) and the plug region (24), - a well region (23) of the second conductivity type, and - at least one barrier region (41, 42) comprising a first barrier region (41) in the semiconductor body (2), where - the well region (23) is located between the first barrier region (41) and the first semiconductor region (21), - the first barrier region (41) is a barrier for charge carriers of the second conductivity type, - the first electrode (31) extends in a direction towards the first barrier region (41) deeper than or as deep as the first semiconductor region (21) into the semiconductor body (2).

A method for manufacturing a semiconductor structure includes: depositing atomic layers of tin monoxide along a vertical direction; patterning the atomic layers of tin monoxide into a channel unit; forming a first conducting oxide unit that is connected to the channel unit; forming a second conducting oxide unit that is connected to the channel unit and that is spaced apart from the first conducting oxide unit so as to permit charge carriers to be transmitted between the first conducting oxide unit and the second conducting oxide unit through the patterned atomic layers in the channel unit along the vertical direction; forming a gate dielectric over the channel unit, the first and second conducting oxide units; forming a metal gate over the gate dielectric; recessing the metal gate to expose the gate dielectric; and partially removing the gate dielectric to expose at least the first conducting oxide unit.

A kind of lead-free perovskite hemispherical photodetector, preparation method and its application in single-pixel lensless color imaging belong to the field of image processing technology.The detector is composed of chromium electrode layer, electron transport layer, perovskite layer, hole transport layer and metal electrode layer from inside to outside on the spherical surface of hemispherical transparent substrate.The perovskite obtained by the application has strong lead-free and excellent stability, outstanding charge carrier transport capacity, high collection efficiency and strong weak light sensing ability.The application uses perovskite for color imaging, directly converts optical signal into electrical signal, has high sensitivity, shows excellent performance with linear dynamic response range of 146dB, and has the advantages of uniform response capacity and uniform thickness.The halide perovskite used by the application has low cost, short preparation time, does not contain toxic element lead, improves the application range of perovskite detector, and reduces the manufacturing cost and time cost of perovskite detector.

This disclosure provides a stress-improving light-emitting diode and its fabrication method, belonging to the field of semiconductor technology. The fabrication method includes: sequentially forming a buffer layer and a filler layer on a substrate; alternately performing multiple cooling growth stages and multiple heating growth stages to form a first insertion layer on the filler layer, wherein, during the cooling growth stage, a first sub-layer is formed at a first temperature, which is lower than the growth temperature of the filler layer; during the heating growth stage, a second sub-layer is formed at a second temperature, which is higher than the first temperature; and sequentially forming a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on the first insertion layer, where the second temperature is lower than the growth temperature of the first semiconductor layer. This disclosure can improve the radiative recombination efficiency of charge carriers and improve the luminous efficiency of the LED.

The invention belongs to the technical field of detector preparation, and particularly discloses a preparation method of a B-site cation doped perovskite X-ray detector and a product. Comprising the following steps: respectively preparing a bottom-layer precursor solution SL with low doping concentration of B-site cations and a top-layer precursor solution SH with high doping concentration of B-site cations; firstly blade-coating the bottom-layer precursor solution SL on a base, then blade-coating the top-layer precursor solution SH on the surface of the base in a laminated manner to form a wet mold with a B-site cation longitudinal concentration gradient, and introducing a 2D organic cation solution into the surface of the wet mold to perform an in-situ reaction so as to construct a 2D / 3D perovskite heterostructure; and carrying out segmented annealing crystallization on the wet mold constructed with the 2D / 3D perovskite heterostructure to obtain a compact gradient doped perovskite thick film, and then preparing a metal electrode on the surface of the gradient doped perovskite thick film. According to the invention, doped ions adjust an energy band structure, the effective quality of carriers is reduced, and the mobility is improved, so that the photo-generated current response and the signal-to-noise ratio are improved.