656 results about "Charge carrier" patented technology

The present invention relates to organic thin film sensors and the preparation and use thereof in sensing applications, and in particular in glucose sensing. The sensor is characterised by a layered structure comprising a porous wicking layer whose surface is configured to receive a liquid sample. An enzyme is disposed on or within the porous layer for facilitating the generation of a charge carrier from an analyte. A polymer layer in contact with the porous layer is connected to an ohmic conductor for applying a gate voltage to the polymer layer, the polymer layer being conductive to the charge carrier; and an organic semiconducting layer is connected to a source electrode and a drain electrode.

To reduce thrust required to convey a charged electrical charge carrier by reducing receding electrostatic force acting in the direction pushing back the electrical charge carrier when the electrical charge carrier is conveyed from a low-potential charging source to a high-potential recovery source, and to keep the potential of the electrical charge carrier low during conveyance.SOLUTION: A potential control layer 73 is provided near a charge retention layer 71 of an electrical charge carrier and the potential is set between that of a charge source and the charge retention layer, thereby reducing the electrostatic force applied to the electrical charge carrier and lowering the potential.SELECTED DRAWING: Figure 6

An embodiment of a perforating gun system deployable in a wellbore extending through a subterranean earthen formation includes a tandem sub including a sub housing and a signal pod receivable in the sub housing, wherein the signal pod includes a detonator and a receptacle; and a perforating gun including a charge carrier configured to receive one or more shaped charges, the charge carrier including a detonator cord housing configured to receive a terminal end of a detonator cord, and wherein the detonator cord housing is receivable in the receptacle of the signal pod to ballistically couple the detonator cord with the detonator.

The invention discloses a graphite-doped negative electrode material as well as a preparation method and application thereof, and belongs to the technical field of rechargeable secondary battery negative electrode materials. The doped graphite negative electrode material comprises an inner core and a shell on the outer layer of the inner core, the inner core is an element-doped graphite-doped secondary particle; the doping mode of the doped graphite secondary particles is solid phase doping or liquid phase doping; the shell comprises an element-doped carbon coating layer formed by vapor deposition; and the total mass of the doped elements accounts for 0.5-10% of the mass of the doped graphite negative electrode material. According to the doped graphite negative electrode material provided by the invention, the graphite secondary particle core and the carbon coating layer are subjected to element doping treatment, the microstructure of graphite is improved by element doping, and active site defects are formed, so that the diffusion of a charge carrier is facilitated, and the dynamic performance of the material is improved; meanwhile, the graphite layer spacing is enlarged; the carbon coating layer isolates the graphite secondary particle inner core from being in direct contact with the electrolyte, so that the fast charging performance of the doped graphite negative electrode is comprehensively improved in an omnibearing and multi-angle manner.

To reduce thrust required for carrying a charge carrier by weakening strong retreating electrostatic force acting on the charged charge carrier, and to increase a conveyable charge amount by weakening potential of the charge carrier being carried, in an electrostatic generator.SOLUTION: A charge control layer remote unit is provided that conducts to a main body of a potential control layer provided in the vicinity of a charge retention layer of a charge carrier and by applying a high voltage of a different polarity of charges charged on a potential control layer body to a charge attraction electrode close to the charge control layer remote unit, charges of the potential control layer main body are moved to a potential control layer remote unit. By increasing potential of the charge carrier and conducting the charge carrier and a recovery electrode, the charges can be safely recovered.SELECTED DRAWING: Figure 10

To provide a method of eliminating charges in a potential control layer when recovering charges simpler and easier than a new charge carrier that can carry high charges at a low potential in an electrostatic generator.SOLUTION: An eliminated charge holder with the same type and without a potential control layer is provided behind a charge carrier 7 in a traveling direction, and is charged by a charging source 8 with a polarity different from and with an equal amount as charges present in a potential control layer 73 of the charge carrier, and the charges are added to the potential control layer 73 to make a charge amount in the potential control layer 73 zero. Thereby, the charges carried in a state in which a potential of the charge carrier 7 is enhanced can be safely recovered in a simple method.SELECTED DRAWING: Figure 3

An example polishing system, such as an electrochemical mechanical polishing (ECMP) system, includes a polishing pad assembly having a polishing pad. The example polishing system includes a bias source. The example polishing system includes a workpiece carrier operable to bring the semiconductor workpiece into contact with the polishing pad. In some implementations, the polishing pad assembly is operable to provide an electrically conductive path for one or more charge carriers to the bias source.

The invention discloses a bulk phase passivation perovskite solar cell and a preparation method and application thereof, and belongs to the field of new energy. The perovskite solar cell comprises a conductive substrate, a hole transport layer, a dielectric layer, a perovskite light absorption layer, an electron transport layer and a top electrode layer which are stacked in sequence, materials of the perovskite light absorption layer comprise (FA < 0.95 > MA < 0.05 >) < 0.95 > Cs < 0.05 > Pb < (I < 0.95 > Br < 0.05 >) < 3 > and guanidyl chloride. According to the perovskite solar cell provided by the invention, a bulk phase passivation technology is adopted, guanidyl chloride is used as a passivator, defect recombination in a perovskite material can be reduced, collection and migration of charge carriers can be enhanced, and the overall performance of the cell, especially the photoelectric conversion efficiency, can be improved.

Performance evaluation and structural optimization methods for a high-power semiconductor laser chip, and a performance evaluation system for a high-power semiconductor laser chip. The performance evaluation method for a high-power semiconductor laser chip comprises: providing a window on an N-side electrode of a chip to be tested (step 1); keeping the chip in an operating state (step 2); allowing a quantum well active region of the chip to generate spontaneous emission, so that the spontaneous emission is imaged outside the chip (step 3); acquiring, by means of a spectrograph, a spectrum of the spontaneous emission outside the chip and obtaining a two-dimensional distribution of a quantum well temperature of the chip in the operating state; and acquiring, by means of a CCD camera, an image of the spontaneous emission imaging outside the chip and obtaining a two-dimensional distribution of charge carriers in the quantum well of the chip in the operating state (step 4). According to the performance evaluation and structural optimization methods for a high-power semiconductor laser chip, the distributions of the temperature and the charge carrier concentration in the quantum well of the chip to be tested in the operating state in which the resolution is freely adjusted can be obtained. Operations of the methods are convenient, and implementation is simple and easy, thereby efficiently improving the accuracy of an evaluation result.

There is disclosed photoactive, one-dimensional zinc and cobalt-based bimetallic oxide and sulfide nanorods (ZnCo2O4 NRs, ZnCo2S4 NRs) and their heterojunction composites (1D / 1D ZnCo2O4 / ZnCo2S4) to be used as photocatalysts for hydrogen production and carbon dioxide reduction using solar energy. Also disclosed herein, is a method of synthesizing these compounds via hydrothermal processes and a self-assembly approach. 1D / 1D heterojunctions of ZnCo2O4 / ZnCo2S4 composites exhibit favourable interface interactions. The photocatalytic performance of both pure and composite materials is evaluated through water splitting to produce hydrogen and CO2 reduction to yield CO and CH4 using slurry phase and fixed bed photoreactor systems. ZnCo2S4 NRs demonstrate superior hydrogen production whereas CO2 reduction is more pronounced with ZnCo2O4. The highest photocatalytic efficiency is achieved using the heterojunction composites attributed to efficient charge carrier separation facilitated by a suitable band structure. The invention underscores the successful synthesis of highly efficient 1D structured materials for photocatalytic applications.

A light emitting device is described. The light emitting device includes a single light emitting photonic crystal having an electroluminescent material disposed in the single light emitting photonic crystal. The single light emitting photonic crystal includes a series of layers of chiral liquid crystalline polymer. The electroluminescent material is localized in one of the layers of chiral liquid crystalline polymer. At least one of the series of layers of chiral liquid crystalline polymer includes a chiral liquid crystalline, charge carrier transporting polymer. The single light emitting photonic crystal further includes a second luminescent material, where energy emanating from the electroluminescent material stimulates the second luminescent material into light emission, and the light emitted by the light emitting device is a mixture of light emitted by the electroluminescent material and light emitted by the second luminescent material.

An array of semiconductor structures is grown on a hetero-interface barrier layer by forming successive semiconductor layers within holes formed through a dielectric layer deposited above the hetero-interface barrier layer. The hetero-interface forms a two dimensional charge carrier gas. Each semiconductor structure is grown within one of the holes and includes at least one LED active layer between an n-type semiconductor layer and a p-type semiconductor layer. The bottom one of the two semiconductor layers has the same conductivity type as the barrier layer on which it is formed. The hetero-interface is defined between the barrier layer and a buffer layer. The barrier layer and buffer layer can be formed from GaN, AlGaN, and / or InGaN of varying concentrations. The two dimensional charge carrier gas can be a 2D electron gas or a 2D hole gas.

Disclosed herein is a perforating system including a perforating gun and, more particularly, disclosed are methods and apparatuses using a conical perforating assembly. In one aspect, embodiments relate to a perforating assembly, that includes a charge carrier, a liner disposed in the charge carrier, and an explosive charge disposed between the charge carrier and the liner and supported on the charge carrier, where the liner is supported on the explosive charge, where the perforating assembly has an asymmetric profile.

A self-orienting perforating gun includes an outer housing having a throughbore, a charge carrier positioned in the throughbore of the outer housing, a hub secured directly or indirectly to the outer housing, a bearing secured to each carrier end of the charge carrier wherein the bearing overlies the hub to provide a rotatable relationship between the hub and the charge carrier about a rotational axis within the outer housing, and an eccentric weight coupled to the charge carrier applying an off-axis orienting force to the charge carrier for urging the charge carrier to rotate about the rotational axis toward a predefined orientation relative to the direction of gravity.

The invention relates to a method for characterising electroluminescent devices, which comprises: • illuminating the electroluminescent devices, the illumination being configured to generate charge carriers; • acquiring a series of luminescence images emitted by recombining the charge carriers in the electroluminescent devices; • determining, from the series of images and for a given electroluminescent device, a luminescence curve (20) as a function of time; • determining, from the luminescence curve (20) as a function of time, at least one parameter representative of an electroluminescence delay T, this electroluminescence delay T corresponding substantially to the start of an emission of radiation by electroluminescence of the given electroluminescent device.

A structure includes a semiconductor substrate. The structure further includes a first oxide structure disposed above the semiconductor substrate and a second oxide structure disposed above the first oxide structure and configured to form a conductive path at an interface between the first oxide structure and the second oxide structure. The structure additionally includes a conducting structure extending from the interface through the second oxide structure. The conducting structure is configured such that in response to a voltage being applied to the conducting structure, a charge carrier is generated below the second oxide structure along the conductive path.

Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.

According to an embodiment, the semiconductor device (100) comprises a semiconductor body (1) having a first-type contact region (11) of a first conductivity type, a second-type contact region (12) of a second conductivity type and a drift region (14) of the first conductivity type. The semiconductor device further comprises a main electrode (2) and a gate electrode (3). A second-type barrier region (42) is arranged vertically between the drift region and the second-type contact region. The second-type barrier region forms a barrier for second-type charge carriers. The first-type contact region and the second-type contact region are laterally spaced apart from each other by a portion of the drift region. The gate electrode is at least partially arranged laterally between the first-type and the second-type contact region. The second-type contact region is arranged vertically between a top side (10) of the semiconductor body and the second-type barrier region. The main electrode electrically contacts the first-type contact region and the second-type contact region. The area arranged vertically between the top side of the semiconductor body and the second-type barrier region only enables a current of second-type charge carriers to flow between the main electrode and the portion of the drift region laterally between the contact regions.

A moisture electric generating device comprising: a first electrode and a second electrode; and disposed between the first electrode and the second electrode and a functional layer which releases electrical charge carriers; the functional layer includes at least two sub layers; a first sub layer acting as a moisture reservoir to a second sublayer, to provide moisture to the second sublayer; the second sub layer which produces electrical charge carriers as a function of moisture available from the first sub layer.

A charge transfer device having a charge transfer channel in a semiconductor substrate. The charge transfer channel is formed by overlap of the possible electrostatic effect of the gates with the conduction layer. A clock generator has a clock frequency of more than 100 MHz which applies changes in potential at the clock frequency to the gates, for transporting charge carriers at the clock frequency from adjacent regions of the overlap between adjacent gates and the conduction layer. The charge transfer channel in the region of one gate has a region of a constriction in which the cross-section in the flow direction decreases, and is arranged at least in the region of the gate upstream of the region of the protuberance or in the regions of the gate upstream of the protuberance and the adjoining gate of the protuberance.

The invention belongs to the technical field of solar cell preparation, and particularly relates to a perovskite solar cell based on selective dissolution solvent treatment and a preparation method thereof. The perovskite cell comprises a conductive substrate, an electron transport layer, a perovskite light absorption layer, a hole transport layer and a metal electrode which are arranged in sequence. A solvent with a selective dissolution characteristic is prepared on the perovskite light absorption layer, and passivation modification is carried out on the perovskite thin film. The invention provides a simple perovskite thin film processing method, complex molecular engineering is not needed, the solvent-based processing effectively passivates the defects of the thin film, improves the quality of the perovskite thin film, establishes a new built-in electric field, forms a more appropriate energy band structure, reduces the recombination of charge carriers, and improves the performance of the perovskite thin film. The separation and transmission capabilities of holes at the surface interface are accelerated, so that the photoelectric property of the perovskite cell is optimized, and the stability is improved.

Methods of manufacturing and devices for a wearable ring device with a battery in the cover of the device are described. The wearable ring device includes an outer shell component with an inner circumferential surface. The battery may extend radially around at least a portion of a circumference of the wearable ring device. In some cases, the wearable ring device may include a battery chamber configured to enclose the battery and charge carriers. One or more structural boundaries of the battery chamber are formed by a cavity within the inner circumferential surface and a battery cover layer coupled to the inner circumferential surface. The wearable ring device may include a printed circuit board (PCB) including a plurality of sensors electrically coupled to the battery. The PCB overlaps with the battery for at least a portion of the circumference of the wearable ring device.

A self-orienting perforating gun includes an outer housing having a throughbore, a charge carrier positioned in the throughbore of the outer housing, a hub secured directly or indirectly to the outer housing, a bearing secured to each carrier end of the charge carrier wherein the bearing overlies the hub to provide a rotatable relationship between the hub and the charge carrier about a rotational axis within the outer housing, and an eccentric weight coupled to the charge carrier applying an off-axis orienting force to the charge carrier for urging the charge carrier to rotate about the rotational axis toward a predefined orientation relative to the direction of gravity.

The invention relates to a laser arrangement comprising at least two edge-emitting laser ridges, each with an integrated active zone and an output coupling plane. The at least two edge-emitting laser ridges are spatially separated from one another and share a common, and in particular a single-piece, semiconductor layer sequence with a contact region. Each ridge has a contact terminal, particularly on a surface, for supplying charge carriers to the active zone. A support substrate with at least one contact region is electrically coupled and mechanically connected to the contact region of the common semiconductor layer sequence. Furthermore, a heating element is provided, which is applied to a surface consisting of one of the common semiconductor layer sequences and the support substrate, and comprises two contact terminals and a meandering conductor between the two contact terminals.

In embodiments a component includes a semiconductor layer sequence having a p-side semiconductor layer, an n-side semiconductor layer and an active zone located therebetween, wherein the active zone has a multiple quantum well structure including a plurality of quantum barrier layers and quantum well layers, the quantum barrier layers and the quantum well layers being arranged alternately along a vertical direction, wherein the active zone has at least one recess having facets extending obliquely to a main surface of the active zone, the recess being opened towards the p-side semiconductor layer, wherein, at least within the recess, the quantum barrier layers are n-doped and have a non-constant doping profile so that the component is configured to increase transport negatively charged charge carriers, from the n-side semiconductor layer towards the p-side semiconductor layer, based on the non-constant doping profile, and wherein, from the n-side semiconductor layer towards the p-side semiconductor layer, dopant concentrations of the quantum barrier layers gradually increase.

The invention discloses an organic composite electrode material, a preparation method thereof and a photo-assisted charging ammonium ion battery. The organic composite electrode material is obtained by compounding 2, 6-di [1-(pyrene-3, 4, 9, 10-tetraformyl diimine)] anthraquinone and reduced graphene oxide, and the organic composite electrode material is prepared by compounding the 2, 6-di [1-(pyrene-3, 4, 9, 10-tetraformyl diimine)] anthraquinone and the reduced graphene oxide. According to the invention, the photo-assisted charging strategy and the aqueous ion battery are combined, the ammonium ions are used as the charge carrier of the aqueous photo-assisted charging battery for the first time by virtue of the rapid dynamic characteristic of the ammonium ions in the aqueous electrolyte, and the advantages of rapid ion transmission of the ammonium ions in the electrolyte are utilized; the problem that the photoelectric reaction rate and the electrochemical oxidation reduction rate in the aqueous photo-assisted rechargeable battery are not matched is solved, collaborative optimization of the photoelectric reaction rate and the electrochemical reaction rate is achieved, the charging and discharging efficiency and the energy utilization rate of the battery are remarkably improved, and a new thought is provided for the next generation of photo-storage integrated battery technology.

Disclosed is a single photon avalanche diode comprises a first well having a first conductivity type, a heavily doped region provided on the first well, a guard ring surrounding the heavily doped region, and a second region formed between the first well and the heavily doped region and configured to multiply charge carriers. The heavily doped region and the guard ring have a second conductivity type different from the first conductivity type. The second region extends onto a boundary between a lower portion of the guard ring and the first well.

The invention provides a high-gain 4H-SiC ultraviolet position sensitive detector and a preparation method thereof, and relates to the technical field of semiconductor photoelectric detection. A high-gain 4H-SiC ultraviolet position sensitive detector is realized through a first n-type 4H-SiC layer, a p-type 4H-SiC layer and a second n-type 4H-SiC layer, namely, an n +-p-n-structure, and a wide bandgap semiconductor material 4H-SiC is used as a device main body for migration of carriers irradiated by light. The material has the outstanding characteristics of large forbidden band width, high critical displacement energy, high thermal conductivity coefficient, good chemical stability and the like. According to the device structure, by introducing an internal gain mechanism, the photoelectric conversion efficiency and the position resolution ratio under the weak light condition are remarkably improved, and the limitations that an existing silicon-based PSD is large in background noise, and performance attenuation or damage is prone to occurring under the extreme environments of high temperature, intense radiation and the like are effectively overcome.

The present application provides a junctionless transistor, comprising a substrate (100), and a buried oxide layer (110), a core layer (150), and a shell layer (160) sequentially stacked on the substrate (100). The doping concentration of the shell layer (160) is less than the doping concentration of the core layer (150), a gate (170) is provided on the shell layer (160), and the dimension of the shell layer (160) in a first direction parallel to the surface of the substrate (100) is greater than the dimension of the gate (170) in the first direction. Compared with a scenario where the dimension of the shell layer (160) in the first direction is equal to the dimension of the gate (170) in the first direction, in the present application, the dimension of the shell layer (160) in the first direction is increased, so that charge carriers in a channel are less influenced by source-drain electric fields and are controlled almost exclusively by a gate electric field. During device operation, due to the low doping concentration or absence of doping in the shell layer (160), the charge carrier mobility is high, and therefore, the device can have a lower off-state current and a higher on-state current, thereby improving the device performance.

The invention relates to the technical field of MOS (Metal Oxide Semiconductor) semiconductors, and discloses a SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device with a shallow P + structure, which comprises a drain electrode, a grid electrode, a grid oxide layer and a semiconductor epitaxial layer, the semiconductor epitaxial layer comprises an N substrate layer, an N drift layer, a side P + layer, an N well layer and a P well layer, a groove is etched in the surface of the semiconductor epitaxial layer, the source electrode is embedded in the semiconductor epitaxial layer through the groove, and the P well layer is embedded in the side P + layer. The section height of the source electrode is the same as that of the semiconductor epitaxial layer; a lower covering P + layer is arranged in the N drift layer and located below the P well layer, and the lower covering P + layer is in contact with the side P + layer. Charge carriers can be guided to flow along a more effective path through the low-doped N layer, the current crowding effect is reduced, the structure is beneficial to enhancing the conductivity modulation effect, low on-resistance can be maintained under the high-voltage condition, and the low-doped N layer can help to homogenize electric field distribution especially in high-voltage application.