Carrier channel with element concentration gradient distribution and fabrication method thereof

a carrier channel and gradient technology, applied in the field of carrier channels, can solve the problems of only applying thermal diffusion process, increasing device thermal budget and production cost, and consuming time and energy in the diffusion process, so as to reduce thermal budget and production cost, and accelerate the melting growth process.

Active Publication Date: 2015-11-19
NATIONAL TSING HUA UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0036]This present disclosure provides a well section in the carrier channel to fabricate a device with acceptable carrier concentration by change the distance from the contact surface without additional process to adjust the carrier concentration. Because the extensive distribution

Problems solved by technology

How to control the carrier concentration and the carrier location precisely is a concerned issue in the semiconductor industry.
But the thermal diffusion process consumes amount of time and energy, and it would increase the thermal budget and the production costs of the device significantly.
Furthermore, the thermal diffusion process is only applied to the shallow area of the device.
Because the carriers acceler

Method used

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  • Carrier channel with element concentration gradient distribution and fabrication method thereof
  • Carrier channel with element concentration gradient distribution and fabrication method thereof
  • Carrier channel with element concentration gradient distribution and fabrication method thereof

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Embodiment Construction

[0016]FIG. 1 is a flowchart of a fabricating method of a carrier channel with an element concentration gradient distribution according to one embodiment of the present disclosure and the fabricating method includes the following steps.

[0017]Step P1, a substrate is provided and the substrate can be made of a single-layer material or a multilayer material which are compatible with a semiconductor process. Therefore, the carrier channel fabricated by the fabricating method can be integrated with the other semiconductor element on a chip. The substrate can be a monocrystalline silicon substrate, a polycrystalline silicon substrate or an amorphous silicon substrate.

[0018]Step P2, a first isolation layer is formed on the substrate and the first isolation layer has a first through hole. The first through hole is formed through the first isolation layer. The shape of the first through hole can be varied on demand. Furthermore, the first isolation layer can be an oxide layer or a nitride lay...

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Abstract

The present disclosure provides a carrier channel with an element concentration gradient distribution. The carrier channel includes a substrate and a carrier channel structure. The carrier channel structure is stacked on the substrate, wherein a ratio of a height and a width of the carrier channel is greater than 1, and the carrier channel is crystallized from the contact surface by a rapid melting growth process, thus the carrier channel structure has the element concentration gradient distribution.

Description

RELATED APPLICATIONS[0001]This application claims priority to Taiwan Application Serial Number 103116982, filed May 14, 2014, which is herein incorporated by reference.BACKGROUND[0002]1. Technical Field[0003]The present disclosure relates to a carrier channel and a fabricating method thereof. More particularly, the present disclosure relates to a carrier channel with an element concentration gradient distribution and a fabricating method thereof.[0004]2. Description of Related Art[0005]In semiconductor devices, the carrier concentration in the active region would affect the performance of the device. How to control the carrier concentration and the carrier location precisely is a concerned issue in the semiconductor industry.[0006]In the semiconductor industry, the thermal diffusion process and the ion implantation process have been widely used to control the carrier concentration and the carrier distribution. The thermal diffusion process promoted the carrier moving from high conce...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L29/10H01L29/36
CPCH01L21/02667H01L21/02642H01L29/1029H01L29/36H01L21/02381H01L21/0245H01L21/02452H01L21/0251H01L21/02532H01L21/02535H01L29/1054
Inventor LEE, MING-CHANGTSENG, CHIH-KUO
Owner NATIONAL TSING HUA UNIVERSITY
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