225 results about "Semiconductor industry" patented technology

The invention discloses a control process and equipment for processing waste gas treatment in the generic semiconductor industry, and relates to the technical field of semiconductor, panel, solar energy and LED waste gas treatment. The equipment comprises a gas inlet control unit, a plasma torch, a reaction cavity, a water tank and a washing tower which are sequentially connected, wherein the gas inlet control unit comprises a three-way valve to realize switching of a main machine and a standby machine; the water tank is provided with a heat exchange and monitoring part; the washing tower comprises a washing section, a turbulent flow section and a demisting section. The process comprises the steps of air inlet control, pyrolysis combustion, cooling and pre-dedusting, water washing, washing tower treatment and the like, and is combined with PID control of plasma power and CDA consumption, and logic control of drainage, flushing and the like. The problems of pipeline blockage and corrosion caused by high operation cost, short PM period and poor washing effect in the process of treating high-dust and high-corrosion process waste gas in the prior art are solved, and the method has the advantages of reducing the cost, prolonging the maintenance period, improving the treatment efficiency and the like.

The invention relates to the technical field of monitoring and detection, and discloses an intelligent early warning method and system for gaseous pollutants in the semiconductor industry, and the method comprises the steps: analyzing the molecular weight of the gaseous pollutants according to the mass-to-charge ratio in an original mass spectrum signal, and analyzing the pollutant type and concentration space-time distribution matrix of the gaseous pollutants according to the molecular weight; carrying out pollution source analysis on the gaseous pollutants according to the pollutant types and the concentration space-time distribution matrix; analyzing the concentration contribution rate of the target pollution source by using the pollutant component characteristics, and analyzing the multi-stage dynamic early warning condition of the gaseous pollutants according to the concentration contribution rate and the concentration spatial-temporal distribution matrix; when the pollutant concentration data in the concentration space-time distribution matrix exceeds a multi-stage dynamic early warning condition, triggering a graded early warning signal of gaseous pollutants in the semiconductor industrial environment; and adaptively executing a control strategy corresponding to the gaseous pollutants in the semiconductor industrial environment based on the graded early warning signal. According to the invention, the accuracy of intelligent early warning of gaseous pollutants in the semiconductor industry can be improved.

The invention discloses a compression method and device for generic semiconductor industry operation and maintenance data, electronic equipment and a medium, and relates to the technical field of data compression. The method comprises the following steps: acquiring to-be-compressed generic semiconductor industrial operation and maintenance data; identifying the time sequence of the generic semiconductor industrial operation and maintenance data to be compressed, and judging whether the generic semiconductor industrial operation and maintenance data is time sequence data or not according to the time sequence; and if the to-be-compressed generic semiconductor industrial operation and maintenance data is time series data, splitting the to-be-compressed generic semiconductor industrial operation and maintenance data into a time data set and a feature data set, and compressing the time data set and the feature data set respectively. According to the compression method, different compression strategies are adopted for different types of data, the compression efficiency of the data is improved, and the balance between the compression rate and the calculation efficiency is optimized.

The invention discloses a wafer defect detection system and method based on multi-modal data fusion, and the system comprises a multi-source data collection unit, a multi-physics field modeling unit, a wafer integrated detection unit, and a defect interaction management unit. Through five steps of acquiring multi-source detection data, constructing a multi-physics field model, detecting and attributing wafer defects, interactively displaying and performing early warning management, the comprehensiveness and adaptability of data acquisition are improved through a multi-source data acquisition unit, and the relevance between physics fields and defects is accurately described through a multi-physics field modeling unit; the wafer integrated detection unit is used for improving the precision of defect detection and attribution, and then the defect interaction management unit is used for realizing full-process visualization and closed-loop process optimization, so that the wafer defect detection system based on multi-modal data fusion is developed towards the high-precision, low-power-consumption and explainable direction; and core support is provided for intelligent upgrading of the semiconductor industry.

The invention belongs to the technical field of chemical engineering, particularly relates to a preparation method and a preparation device of electronic-grade hexafluorobutadiene, and aims to provide a brand-new hexafluorobutadiene synthesis route which can fundamentally solve the bottleneck problem in the existing hexafluorobutadiene production or preparation method. According to the preparation method, chlorotrifluoroethylene is taken as a main raw material, and the electronic grade 4N hexafluorobutadiene meeting the application of the semiconductor industry is prepared through two steps of catalytic polymerization and finished product rectification. The process raw materials and the device are high in utilization rate, impurities such as heptafluorobutene and hexafluorocyclobutene which are difficult to purify do not exist, the quality of the produced finished product can be effectively guaranteed under the condition that the cost is low, and then the technology is more competitive.

The invention discloses a wafer color image consistency evaluation and defect detection method. Firstly, the consistency of a wafer color image is evaluated from three dimensions of image quality, physical attributes and pixel difference, machine hardware is adjusted and monitored accordingly, the consistency and high quality of the wafer color image are guaranteed, difference is carried out on a wafer image to be detected and a standard template based on a crystal grain minimum repetitive unit during detection, and the detection accuracy is improved. And finally determining a defect area through weighted integration of multiple channels. The method can improve the accuracy of the defect detection effect and the consistency of results of different machines, is simple and feasible in implementation and calculation process, and can further meet the requirements of the semiconductor industry for automatic optical detection.

The invention discloses a photosensitive polyimide, a negative photoresist and an application of the photosensitive polyimide in preparation of a film, the structure of the photosensitive polyimide is shown in the specification, X is a tetravalent organic group and is a residue X of a polyimide polymerization monomer tetracarboxylic dianhydride; y is a divalent organic group and is a residue Y of a polyimide polymerization monomer diamine; r1 and R2 are monovalent organic groups and are residues of primary alcohol forming side chain ester bonds of side chain polyamic acid ester; side chains R1 and R2 at least contain tertiary amine structures, and at least one of the side chains R1 and R2 containing the tertiary amine structures can form ammonium salt with phosphate containing an allyl structure; and n is an integer from 2 to 150. The invention provides a photosensitive polyimide which can be developed by adopting an alkaline aqueous solution, can be cured at low temperature and can form a negative pattern, a preparation method of a photoresist composition of the photosensitive polyimide, and a photoetching curing film, which can be applied to display industry or semiconductor industry as an insulating layer, a passivation layer or an interlayer dielectric layer and the like.

A vacuum chuck may include a chuck body formed from silicon carbide. A carbon coating, such as a diamond-like carbon coating, may be deposited on the chuck body. Coating the silicon carbide vacuum chucks with the carbon coatings may control electrostatic discharge events. The carbon coatings may increase the surface resistance of the chuck body and bring the vacuum chucks to within an electrostatic discharge specification which is a tightening specification in the semiconductor industry.

The invention discloses a semiconductor industry wastewater treatment system and a configuration method, the semiconductor industry wastewater treatment system comprises an ultrafiltration device, a reverse osmosis device and a gas-liquid separation device between the ultrafiltration device and the reverse osmosis device, the system uses a tangential inflow assembly to cooperate with a flow guide assembly in a rotational flow area to force fluid to rotate and descend, and microbubbles in ultrafiltration effluent are separated through centrifugal force; releasing the protective gas by using the scavenging assembly to replace the separated gas and reduce the dissolved oxygen; liquid surface bubbles are physically prevented from entering the downstream through an anti-vortex component with the top closed and the side wall provided with holes in the liquid outlet assembly. According to the semiconductor industry wastewater treatment system, the problems of high-pressure pump cavitation, reverse osmosis membrane air resistance and oxidation pollution blockage caused by microbubbles and high dissolved oxygen are effectively solved, the stability of the system is remarkably improved, and the service life of equipment is prolonged.

The invention discloses a displacement measurement method and system based on orbital angular momentum light beam conjugate interference, and the method comprises the steps: enabling linearly polarized light emitted by a laser to pass through an optical attenuator, a light beam expander, a quarter-wave plate and a vortex wave plate to form a light beam with orbital angular momentum, and enabling the light beam to pass through a beam splitter to be divided into a reference light beam and a measurement light beam. A measurement light beam is vertically incident on a reflection grating, and the mth-order diffraction light is incident on a first cube-corner prism and is reflected back to a diffraction grating to be subjected to secondary diffraction. And after the reference beam passes through the second cube-corner prism, the topological charge symbol of the reference beam is changed by the Dove prism. The reference light beam and the measurement light beam generate conjugate interference at the beam splitter prism, a petal-shaped interference pattern collected by the CCD is demodulated, and in-plane and out-of-plane two-dimensional displacement of the grating is calculated. The system has the characteristics of simple and compact structure, strong anti-interference capability, high precision and the like, and can be widely applied to the fields of high-end equipment manufacturing, semiconductor industry, precision metering and the like.

The invention provides polyimide and a preparation method thereof as well as a positive photosensitive polyimide composition and a black film. The polyimide has a structure as shown in a formula I, as one of the components of the photoresist composition, the black shading film is obtained through a photoetching process of alkaline aqueous solution development. The black shading film has good mechanical properties: Young modulus gt; 2.5 GPa, and the tensile strength is gt; the elongation at break is gt under the pressure of 150 MPa; the visible light transmittance is 60% and the visible light transmittance is lt; 1%, and the preparation resolution is 1t; the dielectric layer can be used as an insulating layer, a passivation layer or an interlayer dielectric layer in the display industry or the semiconductor industry.

The invention relates to the technical field of pipeline cutting machining, in particular to pipeline surrounding type cutting equipment for the semiconductor industry and a method thereof.The pipeline surrounding type cutting equipment comprises an equipment bottom frame, movable pipe conveying frames are symmetrically arranged on the left side and the right side of the top of the equipment bottom frame, and a surface cleaning frame is fixedly arranged on the left side of the top of the equipment bottom frame; and an end face grinding frame is further fixedly arranged on the right side of the top of the equipment bottom frame, and a movable girdling frame is arranged at the top of the equipment bottom frame and located between the surface cleaning frame and the end face grinding frame. The movable pipe conveying frame, the surface cleaning frame, the movable girdling frame and the end face grinding frame are integrated through the equipment bottom frame, so that the procedures of surface cleaning, surrounding cutting and end face grinding are sequentially completed in the one-time feeding process of a pipeline, transferring and repeated clamping among multiple pieces of equipment are reduced, the machining process is simplified, and the machining efficiency is improved; the driving assembly is matched with the driving movable block through the driving lead screw, and the positions of the movable pipe feeding frame and the movable girdling frame can be accurately adjusted.

1. Name of the product in this design: Welding apparatus. 2. Application of this design: for welding airtight pressure vessels in the semiconductor industry. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: 3D view 1.

This invention discloses an isotope abundance detection method and system based on the centroid method of emission spectroscopy, belonging to the fields of analytical chemistry and spectroscopic analysis technology. This method measures the centroid position of the atomic spectral lines or molecular spectral bands of the target element, utilizing the quantitative relationship between the centroid position and isotope abundance to achieve rapid, accurate, and low-cost detection of isotope abundance. This invention is the first to systematically establish a complete theoretical framework for the use of the centroid method of emission spectroscopy for isotope abundance detection, revealing the strict linearity conditions between the centroid and abundance, as well as the sources of error. This method is applicable to various excitation sources such as microwave plasma, inductively coupled plasma, and laser-induced breakdown plasma, covering both atomic and molecular spectroscopy detection modes, significantly reducing the resolution requirements of the spectrometer and exhibiting good noise interference resistance. This invention can be widely applied in fields such as nuclear engineering, semiconductor industry, environmental science, geochemistry, and medicine.

The invention relates to a silicon carbide crystal growth crucible suitable for a resistance method, and belongs to the technical field of semiconductor material preparation. The crucible comprises a side wall, a bottom, an upper cover and an inner cavity defined by the side wall and the bottom. The side walls comprise the upper side wall and the lower side wall, and the inner cavity is correspondingly divided into an upper cavity and a lower cavity. The upper cavity is an equal-diameter cylinder, and the lower cavity is in a frustum shape which is gradually expanded from top to bottom. The structure can obviously optimize the thermal field distribution of a raw material area, increase the axial temperature gradient to strengthen the conveying power, reduce the radial temperature gradient, effectively inhibit parasitic crystallization on the surface of powder, and improve the raw material utilization rate and the gas-phase conveying stability. Through active geometric design, a thermal field, a flow field and a material field are cooperatively regulated and controlled, key equipment support is provided for growth of high-quality and large-size silicon carbide single crystals, and the method has important engineering value for promoting industrial development of wide bandgap semiconductors.

A production system, production method and application of general-purpose high-purity chemicals are disclosed. The production system includes a raw material tank, and an adsorption system, a crystallizer, a first light-impurity removal tower, a first heavy-impurity removal tower, a second light-impurity removal tower, a motorized tower, a second heavy-impurity removal tower, a vapor permeation device, a membrane separation system and a filling system connected with the raw material tank in sequence. The high-purity chemicals produced by the above system have high purity and excellent quality. Compared with the prior art, the system and method designed by the present disclosure have more pertinence, integrity, progressiveness, energy-saving, precision, high safety coefficient and great industrial promotion value. And the products produced are of excellent quality, which can meet the standards applied to the manufacturing of integrated circuit electronic components and meet the high-end needs of the semiconductor industry market.

This invention discloses a high-purity 316L stainless steel for semiconductor manufacturing equipment and its production method. It belongs to the field of iron and steel metallurgy technology. This invention employs a process route of molten iron pretreatment + converter roughing + VOD vacuum refining + LF refining + ingot casting + vacuum consumable archive refining (VAR) single vacuum process. Through source impurity control, deep decarburization and deoxidation, precise temperature control, optimized solidification, and single vacuum refining, ultra-low oxygen, hydrogen, and sulfur content and trace inclusions in the steel are achieved. The prepared stainless steel fully meets the stringent requirements of semiconductor equipment. This invention features a simple process flow, low manufacturing cost, and high industrialization feasibility, enabling domestic substitution and enhancing the self-reliance and controllability of the semiconductor industry chain.

The invention relates to a dynamic scheduling method for autonomous navigation type cross-regional transfer of a chemical stock solution, and belongs to the technical field of semiconductor industry and FAB factory material transfer. The method comprises the following steps: acquiring an acid barrel cross-region transfer request, and analyzing acid barrel characteristic parameters and target region information in the request; constructing a transportation task model for the acid barrel, wherein the transportation task model outputs a safety priority for scheduling and sorting and a dynamic comprehensive constraint set for path planning; distributing the task to a scheduling queue according to the security priority; based on the security priority and the dynamic comprehensive constraint set, matching an autonomous navigation carrying AGV for the task; planning an initial transfer path for the matched AGV; and in the task execution process of the AGV, the state of the acid barrel and the operation environment of the AGV are monitored in real time, and a path is dynamically adjusted or a safety emergency mechanism is triggered based on the dynamic comprehensive constraint set until the acid barrel safely reaches the target area. And efficient, safe and intelligent management of the acid barrel in the cross-region transfer process is realized.

The invention relates to a cleaning agent used after SiC substrate grinding and a preparation method thereof, and relates to the field of semiconductor cleaning agents, and the cleaning agent is prepared from the following raw materials by mass: 4-8% of an anionic surfactant, 2-6% of a nonionic surfactant, 2-6% of a cleaning auxiliary agent, 8-12% of sodium hydroxide, 2-4% of a bio-based modified antistatic agent, and the balance of water. The preparation method comprises the following steps: heating water, adding sodium hydroxide, stirring, adding the cleaning aid, stirring, adding the premixed anionic surfactant and nonionic surfactant, stirring, adding the bio-based modified antistatic agent, stirring, cooling, and filtering to obtain the cleaning agent for grinding the SiC substrate. The cleaning agent has a good cleaning effect, can effectively remove impurities after grinding, and meets the requirement of the semiconductor industry for high-quality cleaning of SiC wafers.

The invention relates to the technical field of shaft sleeve type part carrying in the semiconductor industry, in particular to a shaft sleeve type workpiece double-clamping feeding and discharging device and a working method of the shaft sleeve type workpiece double-clamping feeding and discharging device. The support is an L-shaped plate integrally formed by a horizontal plate and a vertical plate, the clamping jaw mechanism is installed on the vertical plate and used for clamping a workpiece sleeve and a workpiece shaft of the shaft sleeve type workpiece at the same time, and the horizontal plate is matched with a robot arm to complete feeding and discharging. The air cylinder is used for pushing the large clamping jaw and the small clamping jaw to conduct clamping at the same time, it is guaranteed that shaft sleeves are concentric, and secondary assembly is not needed; the clamping jaw mechanism is driven by the robot arm to move, two parts of the shaft sleeve are carried at the same time, automatic feeding and discharging are completed, the labor intensity of workers is relieved, and efficiency is improved. By means of the shaft sleeve type workpiece double-clamping feeding and discharging device, automatic integration of simultaneous carrying of two kinds of shaft sleeve parts can be completed, the labor intensity of workers is relieved, the efficiency is improved, and the quality is stabilized.

The invention provides a silicon carbide film as well as a preparation method and a preparation device thereof. The preparation device comprises a vertical reaction chamber, the top of the vertical reaction chamber is provided with an air inlet assembly, and the bottom of the vertical reaction chamber is provided with an air outlet; and the clamping tool is positioned in the vertical reaction chamber and is used for clamping a workpiece, so that the workpiece is parallel to the flowing direction of the introduced gas. The workpiece is kept parallel to the flowing direction of the introduced gas, so that the gas flows along the surface of the workpiece, a parallel flow boundary layer can be formed, and no obvious stagnation point exists, so that the retention time of the gas on the surface of the workpiece is longer, the sufficient reaction of reactants is facilitated, and a uniformly oriented organization structure is easier to form. Therefore, the preparation device can realize uniform deposition of the silicon carbide film, so that the prepared silicon carbide film has the advantages of high thickness uniformity, high conductivity, low defect density and the like, the performance of the device is remarkably improved, the service life of the device is remarkably prolonged, and the requirements of the semiconductor industry are met.

The invention relates to the technical field of waste gas treatment, and provides a semiconductor industrial waste gas treatment method and system. The method comprises the following steps: controlling a deoxidation reaction unit to carry out deoxidation treatment on the semiconductor industrial waste gas; controlling a gas concentration detection unit to detect the oxygen concentration of the deoxidized waste gas; under the condition that the oxygen concentration is smaller than a first concentration threshold value, the plasma reactor is controlled to carry out plasma treatment on the deoxidized waste gas; and predicting the residual service life of the deoxidizer in the deoxidation reaction unit, and replacing or regenerating the deoxidizer under the condition that the residual service life is less than a service life threshold value. According to the method, pre-deoxidation is utilized, generation of nitrogen oxide is inhibited from the source, the deoxidizing agent is predicted and replaced or regenerated in time by utilizing the remaining service life of the deoxidizing agent, sustainability is achieved, operation of semiconductor high-precision equipment and the yield of products are not affected, and catalytic decomposition efficiency of the nitrogen oxide and energy consumption of thermal decomposition do not need to be considered.

The invention discloses a composite robot-based ultrasonic dust removal device for the semiconductor industry, which comprises an AGV trolley, a mounting frame is arranged on the AGV trolley, a bottom frame is arranged at the bottom of the mounting frame, and the bottom frame is connected with the AGV trolley; a mechanical arm is arranged at the top of the mounting frame; an ultrasonic dust removal device is arranged at the free tail end, away from the mounting frame, of the mechanical arm; the ultrasonic dust removal device comprises a dust removal head, a dust removal head bottom plate is arranged at the bottom of a dust removal head cavity, and the dust removal head and the dust removal head bottom plate are integrally formed; an air inlet barrel is arranged at the top of the dust removal head cavity, a positive pressure cavity is formed in the dust removal head cavity, the peripheral side walls of the positive pressure cavity are vertically arranged on a dust removal head bottom plate in the dust removal head cavity, a separation distance is formed between a top plate of the positive pressure cavity and the top end of the dust removal head cavity, and the air inlet barrel is in through connection with the positive pressure cavity. The horizontal plane and the vertical door of the carrier are cleaned, the wider dust removal requirement is met, and the application range is greatly widened.

1. Name of the product under this design: Wire Cutting Machine (YIBO‑50H). 2. Application of this design product: used for cutting various materials in the semiconductor industry. 3. The key point of the design of this product lies in its shape. 4. The picture or photo that best illustrates the design points: Stereoscopic drawing 1.

The utility model provides an energy -conserving type's semiconductor industry oven system, including AI intelligence main control center and heat source assembly, waste gas treatment jar, heat exchanger, loading and unloading conveying component, a plurality of semiconductor industry oven control connection, semiconductor industry oven is equipped with oven high temperature gas air inlet, oven normal temperature gas air inlet and oven high temperature waste gas exhaust, heat source assembly and oven high temperature gas air inlet intercommunication, heat exchanger is equipped with exchanger high temperature waste gas air inlet, exchanger normal temperature air air inlet, exchanger normal temperature waste gas exhaust and exchanger high temperature air outlet, oven high temperature waste gas exhaust and exchanger high temperature waste gas air inlet intercommunication, exchanger high temperature air outlet and oven high temperature gas air inlet intercommunication, exchanger normal temperature waste gas exhaust and waste gas treatment jar intercommunication. The utility model has the advantages of being capable of purifying and treating high temperature waste gas and recycling heat energy in high temperature waste gas, improving production efficiency and reducing energy consumption.

1. Name of the product in this design: Exhaust gas processor (semiconductor). 2. Application of this design: Waste gas treatment in the semiconductor industry. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: a 3D model.

The utility model discloses a device for assisting in balancing weight leveling of a support, which relates to the technical field of testing equipment in the semiconductor industry and comprises a bottom plate, a driver, a PLC (programmable logic controller), a motor, a power detector, a tri-color lamp, a speed reducer and a torsion limiter, the motor is arranged on one side of the bottom plate, the speed reducer is arranged on the upper side of the motor, the driver is arranged on one side of the speed reducer, and the PLC is arranged on the other side of the speed reducer. A PLC is arranged on the lower side of the motor, a tricolor lamp and a power detector are arranged at one end of the bottom plate, a torsion limiter is arranged on the other side of the bottom plate, the motor is connected with a driver and a speed reducer, the speed reducer is connected with the torsion limiter, the torsion limiter is connected with a power shaft of the auxiliary support, and the PLC is connected with the power detector and the tricolor lamp. Through cooperative work of the PLC, the power detector and the three-color lamp, an operator can quickly determine the weight adjusting direction of the weight box according to the colors presented by the three-color lamp in real time, the debugging time of a single support is greatly saved, the production and assembly speed is remarkably increased, and then the overall production efficiency is improved.

The utility model provides rapid detection equipment for fluorine-containing sludge in the generic semiconductor industry. The equipment comprises a shell, a sample table and a detection system, the shell comprises a top opening and a sealing end cover; the sample table comprises a bearing assembly and a second driving part; the bearing assembly is movably connected in the shell, and the bearing assembly comprises a first bearing piece with a bearing cavity and a second bearing piece with a first mounting cavity; the first bearing part is mounted in the first mounting cavity through a first driving part, and the first driving part is used for driving the first bearing part to rotate around a first central shaft of the first bearing part; the first center shaft extends in the direction perpendicular to the second bearing piece. The second driving piece is arranged on the second bearing piece, and the output end of the second driving piece is connected with the first driving piece; the second driving part is used for driving the first bearing part to perform eccentric motion within 1-5 degrees relative to the first central shaft; the detection system is arranged in the shell. The method can be used for quantitatively detecting the light elements, and has relatively high detection sensitivity.

A method for manufacturing an equiaxed crystal target material, comprising the following steps: a metal bar is made into a forged base material by a radial forging process; the forged base material is made into a first plate material by a rolling process and a plate forging process, the rolling process is rolling along the axial direction of the forged base material; a second plate material is obtained by reciprocating an equal channel angular extrusion process on the first plate material with an equal channel angular extrusion die, the cumulative average equivalent strain of the second plate material is greater than 10, wherein the feeding direction of the first plate material into each equal channel angular extrusion die is the same as the rolling direction of the forged base material; and an annealing and recrystallization heat treatment process is performed on the second plate material to obtain an equiaxed crystal target material. Through the above steps, an equiaxed crystal target material with a grain size of not greater than 20 μm can be obtained for use in the semiconductor industry.

1. Name of the designed product: fixed welding device (flange). 2. Use of the designed product: used for fixing and welding of flanges in the semiconductor industry. 3. Design points of the designed product: in shape. 4. Picture or photo best showing the design points: perspective view 1.