395 results about "Semiconductor industry" patented technology

The invention discloses a control process and equipment for processing waste gas treatment in the generic semiconductor industry, and relates to the technical field of semiconductor, panel, solar energy and LED waste gas treatment. The equipment comprises a gas inlet control unit, a plasma torch, a reaction cavity, a water tank and a washing tower which are sequentially connected, wherein the gas inlet control unit comprises a three-way valve to realize switching of a main machine and a standby machine; the water tank is provided with a heat exchange and monitoring part; the washing tower comprises a washing section, a turbulent flow section and a demisting section. The process comprises the steps of air inlet control, pyrolysis combustion, cooling and pre-dedusting, water washing, washing tower treatment and the like, and is combined with PID control of plasma power and CDA consumption, and logic control of drainage, flushing and the like. The problems of pipeline blockage and corrosion caused by high operation cost, short PM period and poor washing effect in the process of treating high-dust and high-corrosion process waste gas in the prior art are solved, and the method has the advantages of reducing the cost, prolonging the maintenance period, improving the treatment efficiency and the like.

The invention discloses low-temperature-resistant perfluoroether rubber and a preparation method thereof, and the low-temperature-resistant perfluoroether rubber comprises the following raw material components in parts by weight: 80-120 parts of a perfluoroether rubber polymer, 1-5 parts of an additive, 10-30 parts of a filler, 1-3 parts of a cross-linking agent, 1-4 parts of an accelerant, 1-3 parts of a processing aid and 1-3 parts of an acid acceptor. The perfluoroether rubber polymer is prepared through a two-step polymerization method, and then the perfluoroether rubber polymer and all the mixed auxiliary materials are mixed and mixed to prepare the low-temperature-resistant perfluoroether rubber. The perfluoroether rubber provided by the invention not only has relatively high hardness, tensile strength, extrusion deformation resistance, shearing resistance and low temperature resistance, can meet the use requirement of the perfluoroether rubber at-40 DEG C, but also has excellent plasma etching resistance, and can be applied to the semiconductor industry.

The invention discloses a high-performance potassium-doped tungsten rod and a preparation method and application thereof, and belongs to the technical field of powder metallurgy, and the method relates to the steps of material selection, pre-reduction, vacuum spray doping, reduction, batch pickling, mixing, hard film cold isostatic pressing forming, low-temperature impurity removal, vertical melting pre-sintering, medium-frequency sintering and the like. By accurately controlling the rare earth element doping process and optimizing doping agent preparation, uniform distribution of rare earth elements in the tungsten rod is achieved, and compared with the prior art, the grain refinement effect and the mechanical performance of the high-performance potassium-doped tungsten rod are remarkably improved. The prepared potassium-doped tungsten rod has the advantages of small average grain size and high bending resistance, is suitable for the fields of cathode materials of electronic devices, heating elements of high-temperature furnaces, filaments in the lighting industry, high-temperature furnaces in the semiconductor industry and the like, and meets the requirements of the modern industry for high-performance tungsten materials.

The invention discloses a WOA-BP-based SiC MOSFET life prediction method and device and a storage medium, and relates to the technical field of reliability prediction of power electronic equipment. The method comprises the following steps: selecting drain-source electrode voltage as an aging characteristic parameter of the SiC MOSFET, and acquiring voltage data in real time in an aging test process by using a sensor; the collected voltage data are preprocessed, abnormal values are eliminated, missing values are supplemented, and the data are smoothed; parameters of a back propagation neural network BP are optimized through a whale optimization algorithm WOA, and a WOA-BP prediction model is constructed; and initializing a WOA-BP model and inputting voltage data for training, and establishing a mapping relation between the service life of the SiC MOSFET and the voltage to realize prediction of the residual service life of the SiC MOSFET. The SiC MOSFET service life prediction model has the advantages of being high in adaptability, low in calculation complexity, high in prediction precision and the like, can be widely applied to the fields of the semiconductor industry, new energy automobiles, industrial automation and the like, and provides powerful support for health management and maintenance of equipment.

The invention relates to the field of chemical engineering, in particular to an n-hexane separation technology, and more particularly relates to a method and a device for preparing electronic-grade n-hexane. The method for preparing the electron n-hexane comprises the following steps: S1, introducing an adsorbent into an n-hexane raw material to remove moisture in the n-hexane, and then carrying out catalytic hydrogenation reaction to obtain crude n-hexane; and S2, carrying out primary filtration on the material subjected to catalytic hydrogenation, then carrying out light component removal and heavy component removal two-stage rectification to obtain high-purity n-hexane, and carrying out secondary filtration on the high-purity n-hexane to obtain the electronic-grade n-hexane. The device for preparing the electronic-grade n-hexane comprises a raw material tank, an adsorption tower, a catalytic hydrogenation reactor, an intermediate tank, a light component removal tower, a heavy component removal tower and a product tank which are connected in sequence. According to the preparation method and device, high-purity electronic-grade n-hexane meeting the strict requirements of the semiconductor industry can be produced, the process steps are simple, industrial production is easy to achieve, the product quality is stable and reliable, and high economic and social benefits are achieved.

The invention discloses a cleaning device for a graphite disc in the semiconductor industry, and relates to the technical field of semiconductor epitaxy, the cleaning device comprises an upper substrate and a graphite disc, and the graphite disc is arranged on one side of the upper substrate. According to the invention, deposited particles on the graphite disc can be cleaned in time after the graphite disc process production is completed, so that the use frequency of the graphite disc is improved, the efficiency of an epitaxial process is improved, and meanwhile, the influence of graphite disc deposits on the wafer performance when the graphite disc is repeatedly used is also reduced.

The invention discloses a WOA-LSTM-based SiC MOSFET life prediction method and device, and a storage medium, and relates to the technical field of reliability prediction of power electronic equipment. The method comprises the following steps: selecting drain-source electrode voltage as an aging characteristic parameter of the SiC MOSFET, and acquiring voltage data in real time in an aging test process by using a sensor; the collected voltage data are preprocessed, abnormal values are eliminated, missing values are supplemented, and the data are smoothed; the method comprises the following steps: optimizing parameters of a long short-term memory network LSTM through a whale optimization algorithm WOA, and constructing a WOA-LSTM prediction model; and initializing a WOA-LSTM model, inputting voltage data for training, and establishing a mapping relation between the service life of the SiC MOSFET and the voltage to realize prediction of the residual service life of the SiC MOSFET. The SiC MOSFET service life prediction model has the advantages of being high in adaptability, low in calculation complexity, high in prediction precision and the like, can be widely applied to the fields of the semiconductor industry, new energy automobiles, industrial automation and the like, and provides powerful support for health management and maintenance of equipment.

The invention relates to the technical field of monitoring and detection, and discloses an intelligent early warning method and system for gaseous pollutants in the semiconductor industry, and the method comprises the steps: analyzing the molecular weight of the gaseous pollutants according to the mass-to-charge ratio in an original mass spectrum signal, and analyzing the pollutant type and concentration space-time distribution matrix of the gaseous pollutants according to the molecular weight; carrying out pollution source analysis on the gaseous pollutants according to the pollutant types and the concentration space-time distribution matrix; analyzing the concentration contribution rate of the target pollution source by using the pollutant component characteristics, and analyzing the multi-stage dynamic early warning condition of the gaseous pollutants according to the concentration contribution rate and the concentration spatial-temporal distribution matrix; when the pollutant concentration data in the concentration space-time distribution matrix exceeds a multi-stage dynamic early warning condition, triggering a graded early warning signal of gaseous pollutants in the semiconductor industrial environment; and adaptively executing a control strategy corresponding to the gaseous pollutants in the semiconductor industrial environment based on the graded early warning signal. According to the invention, the accuracy of intelligent early warning of gaseous pollutants in the semiconductor industry can be improved.

The invention discloses a compression method and device for generic semiconductor industry operation and maintenance data, electronic equipment and a medium, and relates to the technical field of data compression. The method comprises the following steps: acquiring to-be-compressed generic semiconductor industrial operation and maintenance data; identifying the time sequence of the generic semiconductor industrial operation and maintenance data to be compressed, and judging whether the generic semiconductor industrial operation and maintenance data is time sequence data or not according to the time sequence; and if the to-be-compressed generic semiconductor industrial operation and maintenance data is time series data, splitting the to-be-compressed generic semiconductor industrial operation and maintenance data into a time data set and a feature data set, and compressing the time data set and the feature data set respectively. According to the compression method, different compression strategies are adopted for different types of data, the compression efficiency of the data is improved, and the balance between the compression rate and the calculation efficiency is optimized.

A method for predicting an aspect of semiconductor fabrication processes using machine learning. The method involves building a machine learning model that incorporates two parameters of manufactured semiconductor articles that are associated with different physical attributes of the semiconductor articles at different levels of granularity. A mathematical relationship between the two parameters is provided to the computing device, and the machine learning model is used to generate a semiconductor fabrication process prediction. By training the model with data associated with partially fabricated semiconductor articles, missing parameter values can be assigned using the mathematical relationship. This approach improves prediction accuracy and speed. The method has potential applications in the semiconductor industry, particularly for predicting aspects of semiconductor fabrication processes such as metrology, process optimization, and yield prediction.

The invention discloses a fluidized bed-double membrane method deep defluorination device which comprises a plurality of fluidized bed reactors, water inlets of the fluidized bed reactors are connected with a water inlet pipe through first electromagnetic valves, stainless steel filter screens are arranged at the lower ends of the fluidized bed reactors, and cloth carrier layer seed crystals are arranged below the stainless steel filter screens. A fluidized bed clarification area is arranged above the stainless steel filter screen, a fluidized bed water outlet is connected with an ultrafiltration water inlet of a first ultrafiltration membrane column through a first high-pressure diaphragm pump, an ultrafiltration water outlet of the first ultrafiltration membrane column is communicated with an adjusting tank, and the adjusting tank is connected with a reverse osmosis water inlet of a reverse osmosis membrane column through a second high-pressure diaphragm pump; and a reverse osmosis water outlet of the reverse osmosis membrane column is connected with a water production tank. The fluorine ion concentration of the effluent is far higher than 10mg / L of the GB 30484-2013 battery industry pollutant discharge standard, and stably reaches below 1mg / L, so that the quality of the effluent meets the reuse water standard of the semiconductor industry, and the reuse rate of the industrial water is improved.

The utility model discloses a mixed material fluid pipeline system in the semiconductor industry. The pipeline system comprises a stirring and mixing system, a main line circulating system, an auxiliary line circulating system, a first cache discharging system and a second cache discharging system. According to the utility model, the screw pump is selected, and the screw pump can convey high-viscosity and high-solid-content materials and has strong adaptability to media; a liquid circulation system is designed, so that mixed liquid is in a flowing state all the time; stirring is added in the tank body to prevent mixed materials from precipitating; quick-wear parts adopt surface special substance coatings, so that the wear resistance of the quick-wear parts is improved, and the service life of the quick-wear parts is prolonged; a liquid metering device and a control valve are additionally arranged according to the required precision, and the problem that the mass of the mixture transferred in different containers needs to be measured through a metering device can be solved.

The present invention discloses a low-temperature resistant perfluoroether rubber and a preparation method thereof. In parts by weight, the raw material components include: 80-120 parts of perfluoroether rubber polymer, 1-5 parts of additives, 10-30 parts of fillers, 1-3 parts of cross-linking agents, 1-4 parts of accelerators, 1-3 parts of processing aids, and 1-3 parts of acid absorbers. The present invention prepares a perfluoroether rubber polymer by a two-step polymerization method, and then prepares a low-temperature resistant perfluoroether rubber by mixing the perfluoroether rubber polymer with all mixed auxiliary materials. The perfluoroether rubber provided by the present invention not only has higher hardness, tensile strength, anti-extrusion deformation, shear resistance and low-temperature resistance, can meet the use demand of perfluoroether rubber at 40°C, and also has excellent plasma etching resistance, and can be applied to the semiconductor industry.

The invention provides a germanium tetrafluoride purification device which comprises a crude product tank, the crude product tank is connected with a first adsorption tower, the first adsorption tower is connected with a second adsorption tower, the second adsorption tower is connected with a first rectifying tower, the first rectifying tower is connected with a second rectifying tower, the first rectifying tower is connected with a first condenser, and the second rectifying tower is connected with a second condenser. The first rectifying tower is connected with a first condenser, the second rectifying tower is connected with a second condenser, a first heater is mounted on the first rectifying tower, and a second heater is mounted on the second rectifying tower. The invention relates to a purification method of germanium tetrafluoride. The purification method comprises two times of adsorption and two times of rectification. The purification mode of adsorption and rectification is adopted, high-purity germanium tetrafluoride is obtained, the purification effect is excellent, the purity of the obtained product can reach 99.99%, and the problem that the purity of the germanium tetrafluoride product is insufficient in the field of semiconductor industry is effectively solved.

The utility model relates to the technical field of machine tool machining, in particular to a flexible positioning clamp for a five-axis machining center, which comprises a flexible quick-change bottom plate, a plurality of groups of zero-point single bases and a zero-point system unit, the flexible quick-change bottom plate is fixedly connected onto a workbench of the five-axis machining center, the zero-point single bases are fixedly connected onto the flexible quick-change bottom plate, and the zero-point system unit is fixedly connected onto the flexible quick-change bottom plate. The zero-point system unit is fixedly installed on the zero-point single base. According to the flexible positioning clamp for the five-axis machining center, rapid installation, positioning and replacement of the clamp are achieved through a flexible lap joint method and modular design, and therefore the requirements of the semiconductor industry for efficient and accurate machining are met.

The invention discloses a wafer defect detection system and method based on multi-modal data fusion, and the system comprises a multi-source data collection unit, a multi-physics field modeling unit, a wafer integrated detection unit, and a defect interaction management unit. Through five steps of acquiring multi-source detection data, constructing a multi-physics field model, detecting and attributing wafer defects, interactively displaying and performing early warning management, the comprehensiveness and adaptability of data acquisition are improved through a multi-source data acquisition unit, and the relevance between physics fields and defects is accurately described through a multi-physics field modeling unit; the wafer integrated detection unit is used for improving the precision of defect detection and attribution, and then the defect interaction management unit is used for realizing full-process visualization and closed-loop process optimization, so that the wafer defect detection system based on multi-modal data fusion is developed towards the high-precision, low-power-consumption and explainable direction; and core support is provided for intelligent upgrading of the semiconductor industry.

The invention discloses siloxane bridged protocatechuic acid-based epoxy resin as well as a synthesis method and application thereof. Carboxyl of protocatechuic acid is bridged with epoxy groups of polydimethylsiloxane with different chain segment lengths, and then phenolic hydroxyl of protocatechuic acid is subjected to epoxidation reaction through a two-step method, so that the siloxane bridged protocatechuic acid-based epoxy resin is obtained. A novel siloxane bridged protocatechuic acid-based epoxy resin monomer is synthesized, and the structural formula of the monomer is shown as a formula (III). The siloxane-bridged protocatechuic acid-based epoxy resin has the characteristics of low viscosity, high toughening property, low dielectric constant and strong hydrophobicity, the processability of the siloxane-bridged protocatechuic acid-based epoxy resin is improved, and the siloxane-bridged protocatechuic acid-based epoxy resin shows excellent fracture resistance. Through the synergistic improvement, the siloxane bridged protocatechuic acid-based epoxy resin obtained by the invention becomes novel high-performance thermosetting plastic, and has wide application prospects in the fields of electronic packaging and semiconductor industries and architectural coatings.

The invention belongs to the technical field of chemical engineering, particularly relates to a preparation method and a preparation device of electronic-grade hexafluorobutadiene, and aims to provide a brand-new hexafluorobutadiene synthesis route which can fundamentally solve the bottleneck problem in the existing hexafluorobutadiene production or preparation method. According to the preparation method, chlorotrifluoroethylene is taken as a main raw material, and the electronic grade 4N hexafluorobutadiene meeting the application of the semiconductor industry is prepared through two steps of catalytic polymerization and finished product rectification. The process raw materials and the device are high in utilization rate, impurities such as heptafluorobutene and hexafluorocyclobutene which are difficult to purify do not exist, the quality of the produced finished product can be effectively guaranteed under the condition that the cost is low, and then the technology is more competitive.

The invention provides equipment and a method for rapidly detecting fluorine-containing sludge in the generic semiconductor industry. The equipment comprises a shell, a sample table and a detection system, wherein the sample table comprises a bearing assembly and a second driving part; the bearing assembly is movably connected in the shell, and the bearing assembly comprises a first bearing piece with a bearing cavity and a second bearing piece with a first mounting cavity; the first bearing part is mounted in the first mounting cavity through a first driving part, and the first driving part is used for driving the first bearing part to rotate around a first central shaft of the first bearing part; the first center shaft extends in the direction perpendicular to the second bearing piece. The second driving piece is arranged on the second bearing piece, and the output end of the second driving piece is connected with the first driving piece; the second driving part is used for driving the first bearing part to perform eccentric motion within 1-5 degrees relative to the first central shaft; the detection system is arranged in the shell and is used for detecting the light element content of the to-be-detected sample. The method can be used for quantitatively detecting the light elements, and has relatively high detection sensitivity.

The invention relates to the technical field of wastewater treatment devices, and discloses a two-stage air stripping device suitable for high-concentration ammonia-containing wastewater treatment in the semiconductor industry. The air stripping mechanism is arranged on the ground and is used for carrying out air stripping treatment on the ammonia-nitrogen wastewater through a tower body in the air stripping mechanism; the filling mechanism is arranged on the tower body, and the filling mechanism is used for installing filler through a filling replacement hole and a fixing frame in the filling mechanism; according to the ammonia-nitrogen wastewater stripping tower, the stripping mechanism is arranged, wastewater is changed into tiny liquid beads through a spray head to be sprayed out to form a conical spray shape, the tiny liquid beads are sprayed to an internal filler plate and form water drops to flow to the tower bottom, and the treated wastewater flows out of a water outlet in the tower bottom and is pumped into a second tower body through a first ammonia-nitrogen wastewater stripping tower conveying pump to be circularly treated; through two-stage air stripping treatment, the device can adapt to higher ammonia-nitrogen inlet water concentration, and high-ammonia-nitrogen wastewater concentration in the semiconductor industry can be treated more efficiently.

The invention discloses an alkali corrosion liquid for silicon in the semiconductor industry and a corrosion method of the alkali corrosion liquid. According to the alkali corrosion liquid, a corrosion method of slow acid corrosion and sufficient alkali corrosion is adopted, the surface roughness of the silicon wafer can be effectively reduced, in addition, in the alkali corrosion liquid, a surfactant, an active additive, sodium dodecyl polyoxyethylene ether sulfate and the like are matched with alkali, so that the surface tension of the alkali is further reduced, the corrosion rate is higher, and the service life of the silicon wafer is prolonged. The surface tension can be effectively reduced, the affinity of the etching liquid and a silicon substrate is improved, the selective etching capability to silicon dioxide in the etching process can be enhanced, corrosion to the silicon substrate is reduced, and a more uniform and accurate etching effect is achieved. Through measurement, the surface roughness Ra of the silicon wafer obtained by the corrosion method is less than or equal to 0.1 mu m, and the single metal cation is lt; and the corrosion rate can reach 1-1.5 microns / minute and is stabilized within + / -5%.

The invention discloses a semiconductor industry fluorine-containing wastewater treatment system and method. The treatment system comprises an adjusting unit, a pretreatment unit, a phosphorus recovery unit, a biochemical treatment and membrane separation unit and a phosphorus release and calcium removal unit. The phosphorus release and calcium removal unit is used for releasing phosphorus in the membrane separation concentrated water and enabling the phosphorus and partial hydrolytic acidification water of the biochemical treatment and membrane separation unit to enter the phosphorus recovery unit after being subjected to rotational flow enrichment; the phosphorus recovery unit is used for inducing calcium ions and phosphate radical ions in the wastewater to quickly form calcium fluoride and calcium phosphate by taking unprecipitated calcium fluoride, newly generated calcium fluoride and calcium phosphate and calcium fluoride refluxed by the phosphorus release and calcium removal unit as crystal nucleuses by utilizing the high pH value of the pretreatment unit; and finally, the calcium ions are removed from the system in a physicochemical sludge discharge and phosphorus product recovery mode, so that the influence of the calcium ions on the MBR membrane is reduced, the phosphorus recovery rate is improved, the use amount of the precipitant and the sludge amount are reduced, the medicament consumption is reduced, and the stable operation of the biochemical system is ensured.

The invention discloses a wastewater treatment device for the semiconductor industry, and belongs to the technical field of wastewater treatment.The wastewater treatment device for the semiconductor industry comprises a main body, a supporting frame is fixedly connected to the outer wall of the main body, a wastewater inlet pipe is fixedly connected to one side of the top of the main body, and a driving mechanism is installed on the inner wall of a storage cavity; a spraying mechanism is mounted at the top of the main body, a stirring mechanism is mounted on the outer wall of the driving mechanism, and a wastewater outlet pipe is fixedly connected to the outer wall of the main body. By designing the driving mechanism, the spraying mechanism and the stirring mechanism, wastewater and an adsorbent can be quickly mixed, the wastewater can be treated, meanwhile, the angle of stirring blades can be selected, the treatment rate can be increased in the wastewater treatment process of different methods, in addition, the spraying mechanism can move up and down along with stirring, and the treatment efficiency is improved. Therefore, the treatment efficiency is improved, and the method has wide application prospects in the field of wastewater treatment.

The invention discloses a wafer color image consistency evaluation and defect detection method. Firstly, the consistency of a wafer color image is evaluated from three dimensions of image quality, physical attributes and pixel difference, machine hardware is adjusted and monitored accordingly, the consistency and high quality of the wafer color image are guaranteed, difference is carried out on a wafer image to be detected and a standard template based on a crystal grain minimum repetitive unit during detection, and the detection accuracy is improved. And finally determining a defect area through weighted integration of multiple channels. The method can improve the accuracy of the defect detection effect and the consistency of results of different machines, is simple and feasible in implementation and calculation process, and can further meet the requirements of the semiconductor industry for automatic optical detection.

The invention discloses a photosensitive polyimide, a negative photoresist and an application of the photosensitive polyimide in preparation of a film, the structure of the photosensitive polyimide is shown in the specification, X is a tetravalent organic group and is a residue X of a polyimide polymerization monomer tetracarboxylic dianhydride; y is a divalent organic group and is a residue Y of a polyimide polymerization monomer diamine; r1 and R2 are monovalent organic groups and are residues of primary alcohol forming side chain ester bonds of side chain polyamic acid ester; side chains R1 and R2 at least contain tertiary amine structures, and at least one of the side chains R1 and R2 containing the tertiary amine structures can form ammonium salt with phosphate containing an allyl structure; and n is an integer from 2 to 150. The invention provides a photosensitive polyimide which can be developed by adopting an alkaline aqueous solution, can be cured at low temperature and can form a negative pattern, a preparation method of a photoresist composition of the photosensitive polyimide, and a photoetching curing film, which can be applied to display industry or semiconductor industry as an insulating layer, a passivation layer or an interlayer dielectric layer and the like.

A vacuum chuck may include a chuck body formed from silicon carbide. A carbon coating, such as a diamond-like carbon coating, may be deposited on the chuck body. Coating the silicon carbide vacuum chucks with the carbon coatings may control electrostatic discharge events. The carbon coatings may increase the surface resistance of the chuck body and bring the vacuum chucks to within an electrostatic discharge specification which is a tightening specification in the semiconductor industry.

The invention provides a preparation process of an ultra-clean high-purity ammonium fluoride solution, and belongs to the technical field of preparation of electronic-grade chemicals. The microcapsule adsorbent is creatively introduced, various purification technologies are combined, the content of metal ions, particles and organic impurities in the ammonium fluoride solution is remarkably reduced, and the strict requirement of the semiconductor industry for high-purity chemicals is met. Wherein the hollow structure of the microcapsule adsorbent and the amide modified cyclodextrin have a synergistic effect, so that the microcapsule adsorbent is endowed with high specific surface area and strong adsorption capacity and has a strong adsorption effect on heavy metal ions and impurity particles, and the polyacrylate shell material enhances the stability of the microcapsule adsorbent in a strong acid / alkali environment. The traditional process has the problem of poor filtering effect and needs to use complex equipment (such as a centrifugal machine and an ultrafiltration device) for multi-step separation, while the method can achieve an efficient separation effect through conventional filtering operation, has the characteristics of high purification efficiency, convenience in separation, stable product quality and the like, and is suitable for industrial production.

The invention relates to a method and device for cutting a silicon wafer underwater through green wavelength laser. The method comprises the steps that the silicon wafer to be machined is fixed in a container containing liquid; an optical path distance for underwater laser cutting exists between the silicon wafer to be processed and the glass at the bottom of the container cover; enabling the liquid in the container to flow and keep stable, and focusing the laser on the surface of the silicon wafer through glass at the bottom of the container cover and the liquid above the silicon wafer; and the laser moves according to a preset path and completes cutting, and chippings generated by cutting are removed through flowing liquid. According to the method and device for underwater cutting of the silicon wafer through the green wavelength laser, by adopting a non-contact machining means, physical pressure on the wafer is reduced, the requirements of the semiconductor industry for a high-precision and low-damage cutting process can be met, meanwhile, flowing liquid can remove chippings generated by cutting, and the cutting efficiency is improved. And the situation that dust and chippings generated in the cutting process pollute the surrounding environment can be effectively prevented.

The invention relates to the technical field of gaseous pollution detection, and discloses a rapid detection device for new gaseous pollution in the semiconductor industry, the bottom end of a motor is fixedly connected with a platform, the output end of the motor is connected with a displacement part, the displacement part is composed of a bottom and a top, and the motor is used for driving the bottom of the displacement part to reciprocate in the vertical direction; the top of the displacement part is in non-coaxial rotating connection with the rotating part, and the top of the displacement part synchronously rotates along with vertical reciprocating displacement of the displacement part, so that when the displacement part can drive the rotating part to vertically change along with the displacement part, the sensor integrator mounted at the top of the rotating part is synchronously driven to rotate. The displacement part can drive the sensor integrator to perform reciprocating displacement in the vertical direction and can be matched with the rotating part to realize synchronous rotation change under vertical reciprocating displacement, and the rotating part can also realize angle change, so that the detection efficiency and range of gaseous pollutants of the device are further improved.

Embodiments relate to a high-efficiency, refractive metalens capable of observing celestial bodies such as the moon. The metalens comprises a plurality of nanocylinders spatially arranged on a substrate, wherein the plurality of nanocylinders provide the metalens with an aperture having a diameter of 80 mm. The metalens is fabricated with deep-ultraviolet (DUV) projection stepper lithography, which is commonly used in the semiconductor industry. Embodiments further relate to a multi-level-compensated metalens (MLCM) that can achieve achromatic focusing and imaging across the entire visible light spectrum (e.g., 400 nm to 700 nm). The MLCM includes nanocylinders made of high-refractive-index silicon nitride and a plurality of stairs made of low-dispersion silicon nitride, separated by a spacer layer.