297 results about "Semiconductor industry" patented technology

The invention discloses a control process and equipment for processing waste gas treatment in the generic semiconductor industry, and relates to the technical field of semiconductor, panel, solar energy and LED waste gas treatment. The equipment comprises a gas inlet control unit, a plasma torch, a reaction cavity, a water tank and a washing tower which are sequentially connected, wherein the gas inlet control unit comprises a three-way valve to realize switching of a main machine and a standby machine; the water tank is provided with a heat exchange and monitoring part; the washing tower comprises a washing section, a turbulent flow section and a demisting section. The process comprises the steps of air inlet control, pyrolysis combustion, cooling and pre-dedusting, water washing, washing tower treatment and the like, and is combined with PID control of plasma power and CDA consumption, and logic control of drainage, flushing and the like. The problems of pipeline blockage and corrosion caused by high operation cost, short PM period and poor washing effect in the process of treating high-dust and high-corrosion process waste gas in the prior art are solved, and the method has the advantages of reducing the cost, prolonging the maintenance period, improving the treatment efficiency and the like.

The invention discloses a WOA-LSTM-based SiC MOSFET life prediction method and device, and a storage medium, and relates to the technical field of reliability prediction of power electronic equipment. The method comprises the following steps: selecting drain-source electrode voltage as an aging characteristic parameter of the SiC MOSFET, and acquiring voltage data in real time in an aging test process by using a sensor; the collected voltage data are preprocessed, abnormal values are eliminated, missing values are supplemented, and the data are smoothed; the method comprises the following steps: optimizing parameters of a long short-term memory network LSTM through a whale optimization algorithm WOA, and constructing a WOA-LSTM prediction model; and initializing a WOA-LSTM model, inputting voltage data for training, and establishing a mapping relation between the service life of the SiC MOSFET and the voltage to realize prediction of the residual service life of the SiC MOSFET. The SiC MOSFET service life prediction model has the advantages of being high in adaptability, low in calculation complexity, high in prediction precision and the like, can be widely applied to the fields of the semiconductor industry, new energy automobiles, industrial automation and the like, and provides powerful support for health management and maintenance of equipment.

The invention relates to the technical field of monitoring and detection, and discloses an intelligent early warning method and system for gaseous pollutants in the semiconductor industry, and the method comprises the steps: analyzing the molecular weight of the gaseous pollutants according to the mass-to-charge ratio in an original mass spectrum signal, and analyzing the pollutant type and concentration space-time distribution matrix of the gaseous pollutants according to the molecular weight; carrying out pollution source analysis on the gaseous pollutants according to the pollutant types and the concentration space-time distribution matrix; analyzing the concentration contribution rate of the target pollution source by using the pollutant component characteristics, and analyzing the multi-stage dynamic early warning condition of the gaseous pollutants according to the concentration contribution rate and the concentration spatial-temporal distribution matrix; when the pollutant concentration data in the concentration space-time distribution matrix exceeds a multi-stage dynamic early warning condition, triggering a graded early warning signal of gaseous pollutants in the semiconductor industrial environment; and adaptively executing a control strategy corresponding to the gaseous pollutants in the semiconductor industrial environment based on the graded early warning signal. According to the invention, the accuracy of intelligent early warning of gaseous pollutants in the semiconductor industry can be improved.

The invention discloses a compression method and device for generic semiconductor industry operation and maintenance data, electronic equipment and a medium, and relates to the technical field of data compression. The method comprises the following steps: acquiring to-be-compressed generic semiconductor industrial operation and maintenance data; identifying the time sequence of the generic semiconductor industrial operation and maintenance data to be compressed, and judging whether the generic semiconductor industrial operation and maintenance data is time sequence data or not according to the time sequence; and if the to-be-compressed generic semiconductor industrial operation and maintenance data is time series data, splitting the to-be-compressed generic semiconductor industrial operation and maintenance data into a time data set and a feature data set, and compressing the time data set and the feature data set respectively. According to the compression method, different compression strategies are adopted for different types of data, the compression efficiency of the data is improved, and the balance between the compression rate and the calculation efficiency is optimized.

The present invention discloses a low-temperature resistant perfluoroether rubber and a preparation method thereof. In parts by weight, the raw material components include: 80-120 parts of perfluoroether rubber polymer, 1-5 parts of additives, 10-30 parts of fillers, 1-3 parts of cross-linking agents, 1-4 parts of accelerators, 1-3 parts of processing aids, and 1-3 parts of acid absorbers. The present invention prepares a perfluoroether rubber polymer by a two-step polymerization method, and then prepares a low-temperature resistant perfluoroether rubber by mixing the perfluoroether rubber polymer with all mixed auxiliary materials. The perfluoroether rubber provided by the present invention not only has higher hardness, tensile strength, anti-extrusion deformation, shear resistance and low-temperature resistance, can meet the use demand of perfluoroether rubber at 40°C, and also has excellent plasma etching resistance, and can be applied to the semiconductor industry.

The utility model relates to the technical field of machine tool machining, in particular to a flexible positioning clamp for a five-axis machining center, which comprises a flexible quick-change bottom plate, a plurality of groups of zero-point single bases and a zero-point system unit, the flexible quick-change bottom plate is fixedly connected onto a workbench of the five-axis machining center, the zero-point single bases are fixedly connected onto the flexible quick-change bottom plate, and the zero-point system unit is fixedly connected onto the flexible quick-change bottom plate. The zero-point system unit is fixedly installed on the zero-point single base. According to the flexible positioning clamp for the five-axis machining center, rapid installation, positioning and replacement of the clamp are achieved through a flexible lap joint method and modular design, and therefore the requirements of the semiconductor industry for efficient and accurate machining are met.

The invention discloses a wafer defect detection system and method based on multi-modal data fusion, and the system comprises a multi-source data collection unit, a multi-physics field modeling unit, a wafer integrated detection unit, and a defect interaction management unit. Through five steps of acquiring multi-source detection data, constructing a multi-physics field model, detecting and attributing wafer defects, interactively displaying and performing early warning management, the comprehensiveness and adaptability of data acquisition are improved through a multi-source data acquisition unit, and the relevance between physics fields and defects is accurately described through a multi-physics field modeling unit; the wafer integrated detection unit is used for improving the precision of defect detection and attribution, and then the defect interaction management unit is used for realizing full-process visualization and closed-loop process optimization, so that the wafer defect detection system based on multi-modal data fusion is developed towards the high-precision, low-power-consumption and explainable direction; and core support is provided for intelligent upgrading of the semiconductor industry.

The invention discloses siloxane bridged protocatechuic acid-based epoxy resin as well as a synthesis method and application thereof. Carboxyl of protocatechuic acid is bridged with epoxy groups of polydimethylsiloxane with different chain segment lengths, and then phenolic hydroxyl of protocatechuic acid is subjected to epoxidation reaction through a two-step method, so that the siloxane bridged protocatechuic acid-based epoxy resin is obtained. A novel siloxane bridged protocatechuic acid-based epoxy resin monomer is synthesized, and the structural formula of the monomer is shown as a formula (III). The siloxane-bridged protocatechuic acid-based epoxy resin has the characteristics of low viscosity, high toughening property, low dielectric constant and strong hydrophobicity, the processability of the siloxane-bridged protocatechuic acid-based epoxy resin is improved, and the siloxane-bridged protocatechuic acid-based epoxy resin shows excellent fracture resistance. Through the synergistic improvement, the siloxane bridged protocatechuic acid-based epoxy resin obtained by the invention becomes novel high-performance thermosetting plastic, and has wide application prospects in the fields of electronic packaging and semiconductor industries and architectural coatings.

The invention belongs to the technical field of chemical engineering, particularly relates to a preparation method and a preparation device of electronic-grade hexafluorobutadiene, and aims to provide a brand-new hexafluorobutadiene synthesis route which can fundamentally solve the bottleneck problem in the existing hexafluorobutadiene production or preparation method. According to the preparation method, chlorotrifluoroethylene is taken as a main raw material, and the electronic grade 4N hexafluorobutadiene meeting the application of the semiconductor industry is prepared through two steps of catalytic polymerization and finished product rectification. The process raw materials and the device are high in utilization rate, impurities such as heptafluorobutene and hexafluorocyclobutene which are difficult to purify do not exist, the quality of the produced finished product can be effectively guaranteed under the condition that the cost is low, and then the technology is more competitive.

The invention discloses a wafer color image consistency evaluation and defect detection method. Firstly, the consistency of a wafer color image is evaluated from three dimensions of image quality, physical attributes and pixel difference, machine hardware is adjusted and monitored accordingly, the consistency and high quality of the wafer color image are guaranteed, difference is carried out on a wafer image to be detected and a standard template based on a crystal grain minimum repetitive unit during detection, and the detection accuracy is improved. And finally determining a defect area through weighted integration of multiple channels. The method can improve the accuracy of the defect detection effect and the consistency of results of different machines, is simple and feasible in implementation and calculation process, and can further meet the requirements of the semiconductor industry for automatic optical detection.

The invention discloses a photosensitive polyimide, a negative photoresist and an application of the photosensitive polyimide in preparation of a film, the structure of the photosensitive polyimide is shown in the specification, X is a tetravalent organic group and is a residue X of a polyimide polymerization monomer tetracarboxylic dianhydride; y is a divalent organic group and is a residue Y of a polyimide polymerization monomer diamine; r1 and R2 are monovalent organic groups and are residues of primary alcohol forming side chain ester bonds of side chain polyamic acid ester; side chains R1 and R2 at least contain tertiary amine structures, and at least one of the side chains R1 and R2 containing the tertiary amine structures can form ammonium salt with phosphate containing an allyl structure; and n is an integer from 2 to 150. The invention provides a photosensitive polyimide which can be developed by adopting an alkaline aqueous solution, can be cured at low temperature and can form a negative pattern, a preparation method of a photoresist composition of the photosensitive polyimide, and a photoetching curing film, which can be applied to display industry or semiconductor industry as an insulating layer, a passivation layer or an interlayer dielectric layer and the like.

A vacuum chuck may include a chuck body formed from silicon carbide. A carbon coating, such as a diamond-like carbon coating, may be deposited on the chuck body. Coating the silicon carbide vacuum chucks with the carbon coatings may control electrostatic discharge events. The carbon coatings may increase the surface resistance of the chuck body and bring the vacuum chucks to within an electrostatic discharge specification which is a tightening specification in the semiconductor industry.

The invention provides a preparation process of an ultra-clean high-purity ammonium fluoride solution, and belongs to the technical field of preparation of electronic-grade chemicals. The microcapsule adsorbent is creatively introduced, various purification technologies are combined, the content of metal ions, particles and organic impurities in the ammonium fluoride solution is remarkably reduced, and the strict requirement of the semiconductor industry for high-purity chemicals is met. Wherein the hollow structure of the microcapsule adsorbent and the amide modified cyclodextrin have a synergistic effect, so that the microcapsule adsorbent is endowed with high specific surface area and strong adsorption capacity and has a strong adsorption effect on heavy metal ions and impurity particles, and the polyacrylate shell material enhances the stability of the microcapsule adsorbent in a strong acid / alkali environment. The traditional process has the problem of poor filtering effect and needs to use complex equipment (such as a centrifugal machine and an ultrafiltration device) for multi-step separation, while the method can achieve an efficient separation effect through conventional filtering operation, has the characteristics of high purification efficiency, convenience in separation, stable product quality and the like, and is suitable for industrial production.

The invention relates to the technical field of gaseous pollution detection, and discloses a rapid detection device for new gaseous pollution in the semiconductor industry, the bottom end of a motor is fixedly connected with a platform, the output end of the motor is connected with a displacement part, the displacement part is composed of a bottom and a top, and the motor is used for driving the bottom of the displacement part to reciprocate in the vertical direction; the top of the displacement part is in non-coaxial rotating connection with the rotating part, and the top of the displacement part synchronously rotates along with vertical reciprocating displacement of the displacement part, so that when the displacement part can drive the rotating part to vertically change along with the displacement part, the sensor integrator mounted at the top of the rotating part is synchronously driven to rotate. The displacement part can drive the sensor integrator to perform reciprocating displacement in the vertical direction and can be matched with the rotating part to realize synchronous rotation change under vertical reciprocating displacement, and the rotating part can also realize angle change, so that the detection efficiency and range of gaseous pollutants of the device are further improved.

Embodiments relate to a high-efficiency, refractive metalens capable of observing celestial bodies such as the moon. The metalens comprises a plurality of nanocylinders spatially arranged on a substrate, wherein the plurality of nanocylinders provide the metalens with an aperture having a diameter of 80 mm. The metalens is fabricated with deep-ultraviolet (DUV) projection stepper lithography, which is commonly used in the semiconductor industry. Embodiments further relate to a multi-level-compensated metalens (MLCM) that can achieve achromatic focusing and imaging across the entire visible light spectrum (e.g., 400 nm to 700 nm). The MLCM includes nanocylinders made of high-refractive-index silicon nitride and a plurality of stairs made of low-dispersion silicon nitride, separated by a spacer layer.

The invention discloses a semiconductor industry wastewater treatment system and a configuration method, the semiconductor industry wastewater treatment system comprises an ultrafiltration device, a reverse osmosis device and a gas-liquid separation device between the ultrafiltration device and the reverse osmosis device, the system uses a tangential inflow assembly to cooperate with a flow guide assembly in a rotational flow area to force fluid to rotate and descend, and microbubbles in ultrafiltration effluent are separated through centrifugal force; releasing the protective gas by using the scavenging assembly to replace the separated gas and reduce the dissolved oxygen; liquid surface bubbles are physically prevented from entering the downstream through an anti-vortex component with the top closed and the side wall provided with holes in the liquid outlet assembly. According to the semiconductor industry wastewater treatment system, the problems of high-pressure pump cavitation, reverse osmosis membrane air resistance and oxidation pollution blockage caused by microbubbles and high dissolved oxygen are effectively solved, the stability of the system is remarkably improved, and the service life of equipment is prolonged.

The invention discloses a displacement measurement method and system based on orbital angular momentum light beam conjugate interference, and the method comprises the steps: enabling linearly polarized light emitted by a laser to pass through an optical attenuator, a light beam expander, a quarter-wave plate and a vortex wave plate to form a light beam with orbital angular momentum, and enabling the light beam to pass through a beam splitter to be divided into a reference light beam and a measurement light beam. A measurement light beam is vertically incident on a reflection grating, and the mth-order diffraction light is incident on a first cube-corner prism and is reflected back to a diffraction grating to be subjected to secondary diffraction. And after the reference beam passes through the second cube-corner prism, the topological charge symbol of the reference beam is changed by the Dove prism. The reference light beam and the measurement light beam generate conjugate interference at the beam splitter prism, a petal-shaped interference pattern collected by the CCD is demodulated, and in-plane and out-of-plane two-dimensional displacement of the grating is calculated. The system has the characteristics of simple and compact structure, strong anti-interference capability, high precision and the like, and can be widely applied to the fields of high-end equipment manufacturing, semiconductor industry, precision metering and the like.

The invention provides polyimide and a preparation method thereof as well as a positive photosensitive polyimide composition and a black film. The polyimide has a structure as shown in a formula I, as one of the components of the photoresist composition, the black shading film is obtained through a photoetching process of alkaline aqueous solution development. The black shading film has good mechanical properties: Young modulus gt; 2.5 GPa, and the tensile strength is gt; the elongation at break is gt under the pressure of 150 MPa; the visible light transmittance is 60% and the visible light transmittance is lt; 1%, and the preparation resolution is 1t; the dielectric layer can be used as an insulating layer, a passivation layer or an interlayer dielectric layer in the display industry or the semiconductor industry.

The invention provides a method and a device for acquiring equivalent thermal conductivity of a micro-nano metal interconnection structure, electronic equipment and a storage medium, and relates to the technical field of semiconductor industry. According to the method, physical parameters corresponding to a micro-nano metal interconnection structure are determined according to geometric parameters of the micro-nano metal interconnection structure in a chip design layout; and determining the equivalent heat conductivity of the micro-nano metal interconnection structure according to the physical parameters corresponding to the micro-nano metal interconnection structure, wherein the equivalent heat conductivity of the micro-nano metal interconnection structure is used for representing the heat conduction capability of the micro-nano metal interconnection structure. According to the method, the geometric information of the micro-nano metal interconnection structure can be obtained from the chip design layout, and the physical parameters corresponding to the micro-nano metal interconnection structure are determined according to the geometric parameters, so that the equivalent thermal conductivity of the micro-nano metal interconnection structure is obtained, the prediction precision of the equivalent thermal conductivity is improved, and the prediction efficiency is improved. And integration with an industrial design process is realized.

The invention relates to the technical field of pipeline cutting machining, in particular to pipeline surrounding type cutting equipment for the semiconductor industry and a method thereof.The pipeline surrounding type cutting equipment comprises an equipment bottom frame, movable pipe conveying frames are symmetrically arranged on the left side and the right side of the top of the equipment bottom frame, and a surface cleaning frame is fixedly arranged on the left side of the top of the equipment bottom frame; and an end face grinding frame is further fixedly arranged on the right side of the top of the equipment bottom frame, and a movable girdling frame is arranged at the top of the equipment bottom frame and located between the surface cleaning frame and the end face grinding frame. The movable pipe conveying frame, the surface cleaning frame, the movable girdling frame and the end face grinding frame are integrated through the equipment bottom frame, so that the procedures of surface cleaning, surrounding cutting and end face grinding are sequentially completed in the one-time feeding process of a pipeline, transferring and repeated clamping among multiple pieces of equipment are reduced, the machining process is simplified, and the machining efficiency is improved; the driving assembly is matched with the driving movable block through the driving lead screw, and the positions of the movable pipe feeding frame and the movable girdling frame can be accurately adjusted.

The invention belongs to the technical field of dust removal, and particularly relates to a semiconductor industry processing dust remover which comprises a dust removal box, a first cavity, a second cavity and a third cavity are arranged in the dust removal box, a partition plate is arranged between the second cavity and the third cavity, a round opening is formed in the partition plate, the second cavity and the third cavity are communicated through the round opening, and the first cavity and the second cavity are communicated through the round opening. A filter cartridge with an opening in the top and a U-shaped cover are fixedly installed at the bottom of the partition plate, the U-shaped cover is arranged on the outer side of the filter cartridge in a sleeving mode, a negative pressure fan is fixedly installed on the inner wall of the bottom of the first cavity, and a dust removal barrel is fixedly installed on an air outlet of the negative pressure fan; and a ventilation port is fixedly mounted at one end, far away from the negative pressure fan, of the filter cartridge. According to the mold crushing device, a mold in a hearth can be knocked and crushed through the crushing mechanism, and the crushed mold can be absorbed into the dust removal box through cooperation of the negative pressure fan and the dust collection mechanism, so that the situation that crushed slag flies around and dust flies after the mold is crushed is avoided.

The present invention relates to the field of semiconductor processing technology, and specifically to a special deep-hole processing device for semiconductors. A mounting bottom box is fixedly connected to the bottom of the mounting top plate. A protruding rotating cylinder is slidably clamped to the bottom of the mounting bottom box. A limiting slide bar is arranged on the outer side of the protruding rotating cylinder, and the limiting slide bar is slidably clamped to the mounting bottom box. A protective rotating ring is rotatably connected to the inner side of the protruding rotating cylinder. A protective mounting column is fixedly connected to the inner side of the protective rotating ring. An adjustment groove is formed inside the protective mounting column, and a moving groove is formed inside the protective mounting column. It has high flexibility and precision, can achieve precise control of deep-hole processing, and through a series of mechanical linkage devices, realizes precise positioning and direction adjustment of the processing head, thereby meeting the strict requirements of the semiconductor industry for deep-hole processing. This device not only improves the processing efficiency, but also ensures the processing quality, and protects the workpiece and the tool.

1. Name of the product in this design: Welding apparatus. 2. Application of this design: for welding airtight pressure vessels in the semiconductor industry. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: 3D view 1.

This invention discloses an isotope abundance detection method and system based on the centroid method of emission spectroscopy, belonging to the fields of analytical chemistry and spectroscopic analysis technology. This method measures the centroid position of the atomic spectral lines or molecular spectral bands of the target element, utilizing the quantitative relationship between the centroid position and isotope abundance to achieve rapid, accurate, and low-cost detection of isotope abundance. This invention is the first to systematically establish a complete theoretical framework for the use of the centroid method of emission spectroscopy for isotope abundance detection, revealing the strict linearity conditions between the centroid and abundance, as well as the sources of error. This method is applicable to various excitation sources such as microwave plasma, inductively coupled plasma, and laser-induced breakdown plasma, covering both atomic and molecular spectroscopy detection modes, significantly reducing the resolution requirements of the spectrometer and exhibiting good noise interference resistance. This invention can be widely applied in fields such as nuclear engineering, semiconductor industry, environmental science, geochemistry, and medicine.

The invention relates to a silicon carbide crystal growth crucible suitable for a resistance method, and belongs to the technical field of semiconductor material preparation. The crucible comprises a side wall, a bottom, an upper cover and an inner cavity defined by the side wall and the bottom. The side walls comprise the upper side wall and the lower side wall, and the inner cavity is correspondingly divided into an upper cavity and a lower cavity. The upper cavity is an equal-diameter cylinder, and the lower cavity is in a frustum shape which is gradually expanded from top to bottom. The structure can obviously optimize the thermal field distribution of a raw material area, increase the axial temperature gradient to strengthen the conveying power, reduce the radial temperature gradient, effectively inhibit parasitic crystallization on the surface of powder, and improve the raw material utilization rate and the gas-phase conveying stability. Through active geometric design, a thermal field, a flow field and a material field are cooperatively regulated and controlled, key equipment support is provided for growth of high-quality and large-size silicon carbide single crystals, and the method has important engineering value for promoting industrial development of wide bandgap semiconductors.

The invention discloses a method for acquiring a pattern wafer space image based on strict vector diffraction integration, which belongs to the technical field of wafer defect detection, and comprises the following steps: discretizing a wafer pattern into a plurality of discrete points, discretizing the shape of an illumination light source into a plurality of point light sources according to the type of the illumination light source, and obtaining the coordinates of a single point light source; for each point light source, acquiring a space image of a wafer pattern corresponding to each discrete point during illumination of the point light source by using the coordinate of the point light source through a strict vector diffraction integral model; the space images of the wafer patterns corresponding to all the point light sources are superposed to obtain the space image corresponding to the wafer patterns during partial coherent illumination, so that the space images of the wafer patterns can be accurately obtained, and the reliability and the efficiency of wafer defect detection are effectively improved; the urgent demand of the semiconductor industry on a high-precision and high-adaptability detection technology is met, and the improvement of the manufacturing quality of an integrated circuit chip is promoted.

A production system, production method and application of general-purpose high-purity chemicals are disclosed. The production system includes a raw material tank, and an adsorption system, a crystallizer, a first light-impurity removal tower, a first heavy-impurity removal tower, a second light-impurity removal tower, a motorized tower, a second heavy-impurity removal tower, a vapor permeation device, a membrane separation system and a filling system connected with the raw material tank in sequence. The high-purity chemicals produced by the above system have high purity and excellent quality. Compared with the prior art, the system and method designed by the present disclosure have more pertinence, integrity, progressiveness, energy-saving, precision, high safety coefficient and great industrial promotion value. And the products produced are of excellent quality, which can meet the standards applied to the manufacturing of integrated circuit electronic components and meet the high-end needs of the semiconductor industry market.

This invention discloses a high-purity 316L stainless steel for semiconductor manufacturing equipment and its production method. It belongs to the field of iron and steel metallurgy technology. This invention employs a process route of molten iron pretreatment + converter roughing + VOD vacuum refining + LF refining + ingot casting + vacuum consumable archive refining (VAR) single vacuum process. Through source impurity control, deep decarburization and deoxidation, precise temperature control, optimized solidification, and single vacuum refining, ultra-low oxygen, hydrogen, and sulfur content and trace inclusions in the steel are achieved. The prepared stainless steel fully meets the stringent requirements of semiconductor equipment. This invention features a simple process flow, low manufacturing cost, and high industrialization feasibility, enabling domestic substitution and enhancing the self-reliance and controllability of the semiconductor industry chain.

According to the ultra-high-purity stainless steel material for the semiconductor industry and the processing technology of the ultra-high-purity stainless steel material, the wear rate of the ultra-high-purity stainless steel material can be effectively reduced, so that the wear resistance of the ultra-high-purity stainless steel material is improved, impurities introduced by wear when the ultra-high-purity stainless steel material is used in the semiconductor industry are effectively reduced, and the application range of the ultra-high-purity stainless steel material is further widened; a gradient heterostructure is formed in the SLM sample through ultrasonic surface deep rolling treatment, martensite nanocrystals are formed on the surface, the hardness of the surface is further enhanced, dislocation movement is effectively inhibited through a high-density crystal boundary of the nanocrystal structure, and therefore the hardness of the sample is remarkably improved; the improvement of the surface hardness enhances the deformation resistance of the surface in the wear process, so that the wear resistance is improved, and the ultrasonic surface deep rolling treatment obviously improves the wear resistance of an SLM sample under the conditions of dry friction and emulsified lubricating fluid lubrication, so that the application range of the additive manufacturing 316L stainless steel is expanded.

The invention relates to a dynamic scheduling method for autonomous navigation type cross-regional transfer of a chemical stock solution, and belongs to the technical field of semiconductor industry and FAB factory material transfer. The method comprises the following steps: acquiring an acid barrel cross-region transfer request, and analyzing acid barrel characteristic parameters and target region information in the request; constructing a transportation task model for the acid barrel, wherein the transportation task model outputs a safety priority for scheduling and sorting and a dynamic comprehensive constraint set for path planning; distributing the task to a scheduling queue according to the security priority; based on the security priority and the dynamic comprehensive constraint set, matching an autonomous navigation carrying AGV for the task; planning an initial transfer path for the matched AGV; and in the task execution process of the AGV, the state of the acid barrel and the operation environment of the AGV are monitored in real time, and a path is dynamically adjusted or a safety emergency mechanism is triggered based on the dynamic comprehensive constraint set until the acid barrel safely reaches the target area. And efficient, safe and intelligent management of the acid barrel in the cross-region transfer process is realized.