9 results about "Ballast resistor" patented technology

Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, a spark gap device includes first and second conductive layers formed over a substrate, where the first and second conductive layers are electrically connected to first and second voltage nodes, respectively. The first conductive layer includes a plurality of arcing tips configured to form arcing electrode pairs with the second conductive layer to form an arc discharge in response to an EOS voltage between the first and second voltage nodes. The spark gap device further includes a series ballast resistor electrically connected between the arcing tips and the first voltage node, where the ballast resistor in formed in a metallization layer over the substrate and a resistance of the series ballast resistor is substantially higher than a resistance of the second conductive layer.

The present disclosure relates to a fin-based bipolar electrostatic discharge device. The present disclosure relates to semiconductor structures, and more specifically, to electrostatic discharge (ESD) devices and methods of manufacturing the same. The structure (ESD device) includes a bipolar transistor including a collector region, an emitter region, and a base region, and a lateral ballast resistance adjacent to the collector region including a semiconductor material.

The utility model relates to the technical field of power semiconductors, in particular to an IGBT (Insulated Gate Bipolar Transistor) device with a built-in ballast resistor, which comprises a trench region, N + type source regions, polycrystalline silicon regions and contact hole regions, a plurality of N + type source regions and polycrystalline silicon regions are alternately arranged at intervals along the length direction of the trench region, and the contact hole regions are positioned in the N + type source regions; along the thickness direction of the IGBT device, the IGBT device sequentially comprises a collector metal layer, a P + substrate and an N-substrate, and a deep groove is etched on the N-substrate corresponding to a groove region; first doped regions and second doped regions which are alternately distributed are formed on the N-substrate on the two opposite sides of the deep groove, the positions of the first doped regions correspond to the positions of the N + type source regions, and the positions of the second doped regions correspond to the positions of the polycrystalline silicon regions; the top end of the first doped region is provided with an N + well region, and the top end of the second doped region is provided with a second N-well region. The IGBT device provided by the utility model can obtain a larger positive temperature coefficient, and has little influence on the conduction voltage drop VCESAT of the IGBT device at normal temperature.

According to the non-uniform emitter structure optimization design method provided by the invention, collaborative optimization design is carried out on a non-uniform emitter contact structure based on the heat distribution characteristic in the preset working state, and differentiated configuration is carried out on the distance and length of emitter fingers and the resistance value of a ballast resistor according to high-temperature and low-temperature regions; under the action of electrothermal coupling, the current density of a high-temperature area of the device is effectively suppressed, and the conductivity of a low-temperature area is fully called, so that the current distribution and temperature field of the whole emitter junction surface are remarkably balanced, the hot spot effect and the positive feedback risk caused by the hot spot effect are fundamentally weakened, and the reliability of the device is improved. And the thermal stability, the reliability and the service life of the heterojunction bipolar transistor under a high-power working condition are greatly improved.

The invention provides a power amplification chip and a radio frequency front end module, the power amplification chip comprises a substrate and at least two stages of power amplification arrays arranged on the substrate, each stage of power amplification array comprises a plurality of transistors and a plurality of ballast resistors, and each transistor corresponds to one ballast resistor; in the power amplification array located at the rear stage in the at least two stages of power amplification arrays, all the ballast resistors are sequentially connected with the input ends of the power amplification arrays, the resistance values of the ballast resistors are sequentially decreased from the first ballast resistor to the nth ballast resistor, and n is an integer. According to the power amplification chip, the problem of junction temperature difference of different transistors can be solved, so that the overall performance of the power amplification chip is improved.

The application provides an arc heater ballast resistor fireproof fixing device. The arc heater ballast resistor fireproof fixing device comprises a metal frame and a ceramic fixing assembly for fixing the ballast resistor on the metal frame, the ceramic fixing assembly comprises a first ceramic fixing piece, a second ceramic fixing piece and a ceramic buckle, the ballast resistor has a bending part and a connecting part connected with the bending part, the metal frame has a hollow part corresponding to the bending part, the first ceramic fixing piece is fixed in the hollow part of the metal frame, the second ceramic fixing piece is fixed on the metal frame, and the bending part and the connecting part of the ballast resistor are fixed on the first ceramic fixing piece and the second ceramic fixing piece through the ceramic buckle respectively. The arc heater ballast resistor fireproof fixing device solves the fire risk caused by the sharp rise of the surface temperature of the ballast resistor under the abnormal condition of large current or cooling water supply, and has the advantages of simple structure, light weight and high reliability.

Semiconductor device comprising: - a semiconductor substrate (5) of a first conductivity type in which a cell region (1), a ballast resistance region (1a) being a region that is an outer edge of the cell region (1), and a termination region (2) surrounding the ballast resistance region (1a) are defined; - a first insulating film (9) arranged on a front surface of the semiconductor substrate (5), having a first opening (6a) in the cell region (1) and having at least a second opening (6b) in the ballast resistance region (1a); - a second insulating film (10) filled into the at least one second opening (6b); - a first impurity layer (7a) of a second conductivity type arranged on the front surface of the semiconductor substrate (5) below the first opening (6a);- a second defect layer (7b) of the second conductivity type, arranged on the front surface of the semiconductor substrate (5) below the at least one second opening (6b); and - a conductive film (11) arranged from the front surface of the first opening (6a) of the semiconductor substrate (5) to the termination region (2).

IC structures including BPRs used for ESD ballasting are disclosed. An IC structure includes semiconductor structures of one or more transistors. A semiconductor structure may be a fin, nanowire, or nanoribbon of a semiconductor material. The IC structure also includes an electrically conductive layer coupled to the semiconductor structures, a power rail, and a support structure. The power rail is coupled to the electrically conductive layer by a via. The power rail is buried in a support structure. The combination of the power rail and the via constitutes a ESD ballasting resistor for the semiconductor structures. A resistance of the ESD ballasting resistor can be in a range from 5 to 20 ohms. The IC structure may include two or more power rails. A power rail may be arranged between two of the semiconductor structures. The power rails may form a meander structure with other components of the IC structure.