The invention discloses a low-
inductance silicon carbide power module with an electromagnetic symmetrical
interconnection structure, which comprises a bottom surface and a top surface, the
power module specifically comprises a top-layer aluminum
nitride substrate, a top-layer substrate induction
copper layer, a bottom-layer aluminum
nitride substrate, a bottom-layer substrate induction
copper layer, a top-layer DC + conductive
copper layer, a bottom-layer DC + conductive copper layer, a DC-conductive copper layer, an AC conductive copper layer, an upper tube SiC
MOSFET chip driving copper layer, a lower tube SiC
MOSFET chip driving copper layer, a DC + power terminal, a DC-power terminal, an
AC power terminal and an upper tube
chip driving terminal. The device comprises an upper tube chip driving terminal, a lower tube chip driving terminal, an upper tube SiC
MOSFET chip, a lower tube SiC MOSFET chip and a
molybdenum block. According to the invention, the current balance degree between the power loops can be improved, the aging degree of each power loop is balanced, and the service life of the
power module is prolonged. The low-
inductance silicon carbide power module with the electromagnetic symmetrical
interconnection structure can be widely applied to the technical field of
semiconductor power module
layout.