The utility model discloses a low-
inductance power module, which comprises an insulating shell, a heat dissipation bottom plate and a plurality of power conversion units, and is characterized in that the heat dissipation bottom plate is connected with the insulating shell; the plurality of power conversion units are arranged on the heat dissipation bottom plate, each power conversion unit comprises a substrate, a plurality of
copper clamps and a plurality of chips, the front surfaces of the plurality of chips are provided with source electrodes and are respectively connected with the first conductive layer through the
copper clamps, and the back surfaces of the plurality of chips are provided with drain electrodes and are connected with the second conductive layer; grid electrodes of a plurality of chips are connected with the third conductive layer through
metal leads, the adopted chips are
metal oxide semiconductor field effect transistors, source electrodes of the chips adopt
copper clamp structures to achieve electrical
interconnection between the chips and the substrate, and compared with a connection mode of the
metal leads, the copper clamps can offset more
magnetic flux generated by current, so that the reliability of the device is improved. The
chip and the substrate, the
chip and the copper clamp, and the copper clamp and the substrate are interconnected by adopting a nano-metal
sintering process, so that the
thermal reliability of the
interconnection part is improved, the copper clamp and nano-metal
sintering process is conveniently realized through the overall
layout design of the substrate, the effect of low parasitic
inductance of the module is realized, and the reliability of the module is improved. And module reliability is improved.