The invention discloses a low-trigger high-maintaining-
voltage silicon-controlled electrostatic protection device and a manufacturing method thereof, an N trap is added to the right side of a
cathode of a traditional double-trap
silicon-controlled device to form three traps, the three traps are connected to an
anode through N + injection, and compared with a traditional one-way low-trigger
silicon-controlled electrostatic protection device, the low-trigger high-maintaining-
voltage silicon-controlled electrostatic protection device has a shorter distance between the
cathode and the
anode. Besides, an NMOS (N-channel
Metal Oxide Semiconductor) and P + injection are embedded in a P trap of the device, a grid drain of the NMOS is connected with the P + injection, a source of the NMOS is connected with a
cathode, a surface ESD (Electro-Static
Discharge) current
discharge path is added on the basis of a traditional unidirectional silicon controlled electrostatic protection device, and the
positive feedback effect of the SCR
discharge path can be effectively inhibited. Therefore, the device has the characteristics of low trigger
voltage and high maintaining voltage, and a core circuit of a
chip is effectively protected from the risk of latching. The device can be applied to ESD protection of the I / O port with the working voltage of 0-5.5 V.