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325results about How to "Lower work function" patented technology
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Method of producing thin films
ActiveUS7563715B2Lower work functionReduce crystallinityTransistorSemiconductor/solid-state device manufacturingWork functionMetal electrodes
Owner:ASM INTERNATIONAL
Method of producing thin films
ActiveUS20070128858A1Lower work functionReduce crystallinityTransistorSemiconductor/solid-state device manufacturingWork functionMetal electrodes
Owner:ASM INTERNATIONAL
Multi-phasic microphotodetector retinal implant with variable voltage and current capability
InactiveUS6389317B1Increase amplitudeLower work functionTelevision system detailsHead electrodesDiseaseRetinal implant
A visible and infrared light powered retinal implant is disclosed that is implanted into the subretinal space for electrically inducing formed vision in the eye. The retinal implant includes a stacked microphotodetector arrangement having an image sensing pixel layer and a voltage and current gain adjustment layer for providing variable voltage and current gain to the implant so as to obtain better low light implant performance than the prior art, and to compensate for high retinal stimulation thresholds present in some retinal diseases. A first light filter is positioned on one of the microphotodetectors in each of the image sensing pixels of the implant, and a second light filter is positioned on the other of the microphotodetectors in the image sensing pixel of the implant, each of the microphotodetectors of the pixel to respond to a different wavelength of light to produce a sensation of darkness utilizing the first wavelength, and a sensation of light using the second wavelength, and a third light filter is positioned on a portion of the voltage and current gain adjustment layer that is exposed to light, to allow adjustment of the implant voltage and current gain of the device by use of a third wavelength of light.
Owner:PIXIUM VISION SA
Organic light emitting device and display device using the same
InactiveUS7399991B2Avoid charge accumulationLower the barrierElectroluminescent light sourcesSolid-state devicesOrganic light emitting deviceDisplay device
Owner:SEMICON ENERGY LAB CO LTD
Solution processable material for electronic and electro-optic applications
ActiveUS20100012178A1Reduce work functionImprove electrical conductivityElectroluminescent light sourcesNanoinformaticsWork functionComposite material
An electro-optic device has a first electrode, a second electrode spaced apart from the first electrode, an active layer disposed between the first electrode and the second electrode, and an interfacial layer in contact with the active layer. The interfacial layer is a blend of a metal oxide and a second material that at least one of reduces a work function or increases an electrical conductivity of the interfacial layer according to an embodiment of this invention. A composition for electro-optic devices is a blend of at least one metal oxide and at least one salt in a ratio, by volume, of at least 1:0.1 and less than 1:1.2.
Owner:SOLARMER ENERGY INC
Optoelectronic displays
InactiveUS20040263045A1Easy to produceLower work functionStatic indicating devicesElectroluminescent light sourcesPhotoluminescence quenchingDisplay device
Apparatus and methods for providing displays based upon the principle of photoluminescent quenching are described. The invention includes a method of displaying information using photoluminescence quenching, the method comprising providing an optoelectronic display comprising a photoluminescent material between a pair of electrodes, providing illumination for the photoluminescent material to cause the photoluminescent material to photoluminescence, and biasing the electrodes to at least partially quench the photoluminescence.
Owner:CAMBRIDGE DISPLAY TECH LTD
Quantum dot ultracapacitor and electron battery
ActiveUS20100183919A1Small sizeImprove work functionMaterial nanotechnologyNanoinformaticsNanowireQuantum well
The present invention provides a solid-state energy storage device having at least one quantum confinement species (QCS), where the QCS can include a quantum dot (QD), quantum well, or nanowire. The invention further includes at least one layer of a dielectric material with at least one QCS incorporated there to, and a first conductive electrode disposed on a top surface of the at least one layer of the dielectric material, and a second conductive electrode is disposed on a bottom surface of the at least one layer of dielectric material, where the first electrode and the second electrode are disposed to transfer a charge to the at least one QCS, where when an electrical circuit is disposed to provide an electric potential across the first electrode and the second electrode, the electric potential discharges the transferred charge from the at least one QCS to the electrical circuit.
Owner:THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIV
Field emission-type electron source
InactiveUS20030076023A1Increase resistanceImprove featuresDischarge tube luminescnet screensElectric discharge tubesOptoelectronicsNon doped
A lower electrode (2) and surface electrode (7) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate (1) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer (3) is formed on the lower electrode (2), An electron transit layer (6) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer (3). The electron transit layer (6) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode (2) and the surface electrode (7) such that the surface electrode (7) has a higher potential, electrons are injected from the lower electrode (2) toward the surface electrode (7), and emitted through the surface electrode (7) through the electron transit layer (6).
Owner:MATSUSHITA ELECTRIC WORKS LTD
Triode Field Emission Cold Cathode Devices with Random Distribution and Method
InactiveUS20050104506A1Lower work functionDischarge tube luminescnet screensLamp detailsCold cathodeOptoelectronics
A method of manufacturing a triode field emission cold cathode device having randomly distributed field emission emitters comprising the steps of providing a substrate (10), depositing a first conductive layer (11) on the substrate, spraying the preceding layer with a random pattern of masking material (20), depositing an insulating layer (13) on the masked preceding layer, depositing a second conductive layer (14) on the insulting layer, and removing the masking material. A triode field emission cold cathode device having randomly distributed field emission emitters is also provided.
Owner:YOUH MENG JEY +3
Organic light emitting display and method of fabricating the same
ActiveUS20070176548A1Simple structureIncrease attractivenessDischarge tube luminescnet screensElectroluminescent light sourcesFritDisplay device
An organic light emitting display and a method of fabricating the same, and more particularly, an organic light emitting display in which the surface of a substrate contacted to a frit is made non-planar to improve an adhesive force and a method of fabricating the same are disclosed. The organic light emitting display includes a first substrate including a pixel region in which at least one organic light emitting diode (OLED) is formed and a non-pixel region formed on the outer circumference of the pixel region so that one region of the non-pixel region is made with one or more non-planar structures, a second substrate attached to the first substrate so that the OLED is encapsulated with a frit interposed between the first substrate and the second substrate and contacted to the non-planar structures.
Owner:SAMSUNG DISPLAY CO LTD
Replacement metal gate with a conductive metal oxynitride layer
ActiveUS20130009257A1Lower work functionSemiconductor/solid-state device manufacturingSemiconductor devicesGate dielectricSurface oxidation
A disposable gate structure and a gate spacer are formed on a semiconductor substrate. A disposable gate material portion is removed and a high dielectric constant (high-k) gate dielectric layer and a metal nitride layer are formed in a gate cavity and over a planarization dielectric layer. The exposed surface portion of the metal nitride layer is converted into a metal oxynitride by a surface oxidation process that employs exposure to ozonated water or an oxidant-including solution. A conductive gate fill material is deposited in the gate cavity and planarized to provide a metal gate structure. Oxygen in the metal oxynitride diffuses, during a subsequent anneal process, into a high-k gate dielectric underneath to lower and stabilize the work function of the metal gate without significant change in the effective oxide thickness (EOT) of the high-k gate dielectric.
Owner:IBM CORP
Semiconductor device, method of manufacturing semiconductor device, solid-state image pickup unit, and electronic apparatus
ActiveUS20150188065A1Reduce transmittanceReduce light transmittanceFinal product manufactureSolid-state devicesOrganic filmEngineering
There are provided a semiconductor device capable of adjusting a work function without reducing light transmittance of an electrode, a method of manufacturing this semiconductor device, a solid-state image pickup unit including this semiconductor device, and an electronic apparatus including this solid-state image pickup action. The semiconductor device includes a functional layer between a first electrode and a second electrode, the functional layer including an organic film, in which the first electrode and the second electrode are made of a same transparent conductive material, and an oxygen amount at an interface on the functional layer side of the first electrode is smaller than an oxygen amount at an interface on the functional layer side of the second electrode.
Owner:SONY SEMICON SOLUTIONS CORP
Multi-phasic microphotodetector retinal implant with variable voltage and current capability and apparatus for insertion
InactiveUS20020099420A1Higher capacitive effectLower work functionTelevision system detailsHead electrodesDiseaseRetinal implant
Owner:OPTOBIONICS
Multi-phasic microphotodetector retinal implant with variable voltage and current capability and apparatus for insertion
InactiveUS20040082981A1Higher capacitive effectLower work functionTelevision system detailsEye implantsDiseaseRetinal implant
A visible and infrared light powered retinal implant is disclosed that is implanted into the subretinal space for electrically inducing formed vision in the eye. The retinal implant includes a stacked microphotodetector arrangement having an image sensing pixel layer and a voltage and current gain adjustment layer for providing variable voltage and current gain to the implant so as to obtain better low light implant performance than the prior art, and to compensate for high retinal stimulation thresholds present in some retinal diseases. A first light filter is positioned on one of the microphotodetectors in each of the image sensing pixels of the implant, and a second light filter is positioned on the other of the microphotodetectors in the image sensing pixel of the implant, each of the microphotodetectors of the pixel to respond to a different wavelength of light to produce a sensation of darkness utilizing the first wavelength, and a sensation of light using the second wavelength, and a third light filter is positioned on a portion of the voltage and current gain adjustment layer that is exposed to light, to allow adjustment of the implant voltage and current gain of the device by use of a third wavelength of light.
Owner:PIXIUM VISION SA
Metal gate and fabrication method thereof
InactiveUS20120319179A1Reduce thicknessLower work functionSemiconductor/solid-state device manufacturingSemiconductor devicesGate dielectricWork function
A metal gate includes a substrate, a gate dielectric layer, a work function metal layer, an aluminum nitride layer and a stop layer. The gate dielectric layer is located on the substrate. The work function metal layer is located on the gate dielectric layer. The aluminum nitride layer is located on the work function metal layer. The stop layer is located on the aluminum nitride layer.
Owner:UNITED MICROELECTRONICS CORP
Graphene device and electronic apparatus
A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.
Owner:SAMSUNG ELECTRONICS CO LTD
Organic light-emitting diode (OLED) device
ActiveCN103022377AAvoid reduction of outgoing light intensityImprove efficiencySolid-state devicesSemiconductor/solid-state device manufacturingMagnesiumComposite cathode
The invention relates to an organic light-emitting diode (OLED) device which comprises a substrate and an anode, an organic layer and a cathode which are sequentially arranged on the substrate. The cathode is a transparent composite cathode and comprises an alloy layer of low work function metal and silver, a silver layer and an anti-reflection layer arranged on the silver layer. The work function of the low work function metal is smaller than 3.7eV, the molar ratio of the low work function metal and the silver in the alloy layer is 2:1-8:1, the thickness of the alloy layer is 3-11nm, the thickness of the silver layer is 15-30nm, and the thickness of the anti-reflection layer is 30-100nm. Magnesium, lithium, potassium and the like can be wrapped on the periphery of silver atoms when being evaporated with the silver together, the work function of the cathode can be effectively reduced by evaporation in proper proportion, and the cathode cannot absorb a large amount of visible light. The anti-reflection layer increases intensity of transparent light, is large in energy gap and does not affect color purity of the device. The thickness of the alloy layer and the silver layer is low, so that the alloy layer and the silver layer have high light transmittance.
Owner:KUNSHAN VISIONOX DISPLAY TECH +2
Non-Volatile Memory Device with Improved Immunity to Erase Saturation and Method for Manufacturing Same
InactiveUS20090134453A1Improved immunity to erase saturationReduce work functionSemiconductor/solid-state device manufacturingSemiconductor devicesDielectricWork function
A non-volatile memory device having a control gate on top of the second dielectric (interpoly or blocking dielectric), at least a bottom layer of the control gate in contact with the second dielectric being constructed in a material having a predefined high work-function and showing a tendency to reduce its work-function when in contact with a group of certain high-k materials after full device fabrication. At least a top layer of the second dielectric, separating the bottom layer of the control gate from the rest of the second dielectric, is constructed in a predetermined high-k material, chosen outside the group for avoiding a reduction in the work-function of the material of the bottom layer of the control gate. In the manufacturing method, the top layer is created in the second dielectric before applying the control gate.
Owner:SAMSUNG ELECTRONICS CO LTD +1
Organic light emitting device
ActiveUS20100045176A1Increase efficiencyLow work functionDischarge tube luminescnet screensLamp detailsIndiumOxide matrix
An organic light emitting display includes an anode; an organic layer on the anode; and a cathode on the organic layer. The cathode includes a first region and a second region which are sequentially disposed on the organic layer in parallel. The first and second regions are formed by doping a metal oxide on an indium oxide matrix. The doping density of the metal oxide of the first region is greater than that of the second region, the metal oxide of the first region has a density gradient, and the density of the metal oxide in a boundary surface of the first and second regions is the same. An organic light emitting display according to the present invention can increase light emitting efficiency without using a resonance structure.
Owner:SAMSUNG DISPLAY CO LTD
Energy generation system and method thereof
ActiveUS20130229018A1Low costSufficient energyAuxillary drivesCombustion enginesGeneration processProcess engineering
An energy generation system and method are presented for use in operating a heat engine. The energy generation method comprises: reducing a CO2 gas into CO and O2 gases; reacting said CO and O2 gases, thus combusting the CO gas, and yielding a substantially pure CO2 outlet gas; and supplying said CO2 outlet gas to the heat engine as a working gas in its heat-to-work generation process.
Owner:YEDA RES & DEV CO LTD
Organic light emitting device and display device using the same
InactiveUS20080197769A1High light emitting efficiencyLong lastingDischarge tube luminescnet screensElectroluminescent light sourcesSimple Organic CompoundsOrganic light emitting device
Owner:SEMICON ENERGY LAB CO LTD
Low work function cathode
InactiveUS20050200261A1High protection levelLower work functionNanoinformaticsThermionic cathodesHigh current densityVolumetric Mass Density
Field emission properties may also be improved by coating the carbon materials with metal oxides. These metal oxides contribute to lowering the work function of the carbon material as well as improve the life of the field emission properties of the carbon materials, especially under high current density operation.
Owner:APPLIED NANOTECH HLDG
Semiconductor device and manufacturing method of the same
InactiveUS20080283929A1Lower threshold voltageLower work functionTransistorSemiconductor/solid-state device manufacturingDevice materialAlloy
In a p channel MOS transistor and an n channel MOS transistor each having a gate electrode made of metal on a gate insulating film made of oxide whose relative dielectric constant is higher than that of silicon oxide, threshold voltage thereof is reduced. A gate insulating film of a p channel MOS transistor and an n channel MOS transistor is made of hafnium oxide, a gate electrode of the p channel MOS transistor is made of ruthenium, and a gate electrode of the n channel MOS transistor is made of alloy containing ruthenium as a base material and hafnium.
Owner:RENESAS TECH CORP
Indium tin oxide (ITO)-free quantum light emitting diode (QLED) and fabrication method thereof
ActiveCN105140411AReduce usageGood light emitting effectSolid-state devicesSemiconductor/solid-state device manufacturingHole injection layerQuantum dot
The invention is applicable for the field of a quantum dot light emitting diode (QLED), and provides an indium tin oxide (ITO)-free QLED and a fabrication method thereof. The ITO-free QLED comprises a substrate carrier, a cathode layer, a first non-conjugated polyelectrolyte layer, an electron injection layer, a quantum dot light emitting layer, a hole transfer layer, a hole injection layer and an anode layer which are sequentially laminated, wherein the material of the anode layer is PEDOT:PSS (PH1,000). According to the fabrication method of the ITO-free QLED, the cathode layer, the first non-conjugated polyelectrolyte layer, the electron injection layer, the quantum dot light emitting layer, the hole transfer layer, the hole injection layer and the anode layer are sequentially fabricated on the substrate carrier.
Owner:TCL CORPORATION
Method for forming fully silicided gate electrode in a semiconductor device
ActiveUS20080224239A1Lower work functionReduce equivalent oxide thicknessSemiconductor/solid-state device manufacturingSemiconductor devicesComposite filmEngineering
A semiconductor MOS device includes a semiconductor substrate; a gate oxide layer disposed on the semiconductor substrate; a fully silicided gate electrode disposed on the gate oxide layer; a composite thin film interposed between the fully silicided gate electrode and the gate oxide layer; a spacer on sidewall of the fully silicided gate electrode; and a source / drain region implanted into the semiconductor substrate next to the spacer. A method for forming the semiconductor MOS device is disclosed.
Owner:UNITED MICROELECTRONICS CORP
Organic light emitting display and method of fabricating the same
ActiveUS7795803B2Simple structureIncrease attractivenessDischarge tube luminescnet screensElectroluminescent light sourcesFritDisplay device
Owner:SAMSUNG DISPLAY CO LTD
El display device and method for manufacturing same
ActiveUS20140159074A1Low contact resistanceInhibition formationElectroluminescent light sourcesSolid-state devicesElectrical connectionEngineering
An EL display device of the present invention includes a plurality of pixel electrodes, wiring, a common electrode, a plurality of light-emitting layer portions, and a protective layer. The pixel electrodes are formed in one-to-one correspondence with a plurality of pixels. The wiring is formed in at least one of a plurality of intervals between the pixels. The common electrode is formed above each of the pixel electrodes and is in electrical connection with the wiring. The common electrode is made of alkali metal or alkaline earth metal. The light-emitting layer portions are each located between a corresponding one of the pixel electrodes and the common electrode. The protective layer is located on the common electrode, preventing oxidization thereof. The EL display device suppresses voltage drop in the common electrode, while also suppressing reduction in a property of electron injection to the light-emitting layer portions.
Owner:JOLED INC
Large area silicon cone arrays fabrication and cone based nanostructure modification
InactiveUS20030111336A1Accelerate emissionsLower work functionCellsElectric discharge tubesMetal foilEtching
A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal / metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide / silicon nanowires on tips of the silicon cones.
Owner:INTELLECTUAL VENTURES II
Polymer solar cell based on AZO/ZnO cathode and manufacturing method of polymer solar cell
InactiveCN104051625ALower work functionSimple manufacturing processFinal product manufactureSolid-state devicesWork functionElectron transfer
The invention discloses a polymer solar cell based on an AZO / ZnO cathode and a manufacturing method of the polymer solar cell. The manufacturing method comprises the following steps that (1) a substrate is washed, (2) a ZnO electron transfer layer is deposited, (3) a P3HT: PCBM organic light active layer is deposited, (4) pre-annealing is conducted, (5) a MoO3 hole transfer layer is deposited, and (6) an Ag metal anode is deposited. The ZnO electron transfer layer is prepared according to a low-temperature water solution method, the work function of an AZO electrode is lowered through the ZnO electron transfer layer, energy level matching between AZO and P3HT: PCBM is achieved, the interface characteristic is improved, energy loss is reduced, and the energy conversion efficiency of the polymer solar cell of a reversed structure is effectively improved.
Owner:XIDIAN UNIV
Uv-led ionization source and process for low energy photoemission ionization
ActiveUS20120248301A1Promote generationIncrease ionic strengthMaterial analysis by optical meansIon sources/gunsAnalyteUltraviolet
A UV-LED photoemission ionization source and process are disclosed that provide ionization of analytes including volatile molecular species and organic residues for detection with various ion analyzers. The UV-LED source produces low-energy UV light (200 nm to 400 nm) that yields photoemission electrons from various conducting surfaces. These photoemission electrons provide direct and indirect ionization of analytes including trace organic residues without need of high electric fields.
Owner:BATTELLE MEMORIAL INST
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