399 results about "Hole injection layer" patented technology

An organic light-emitting device comprises an anode, a cathode and an organic layer formed between the anode and the cathode, and the organic layer comprises a hole injection layer, a hole transmission area, an electron blocking layer, a light-emitting area and an electron transmission area. The hole transport region comprises a first material and a second material, the first material and the second material are sequentially evaporated to form two hole transport layers, and the first material is selected from a compound shown in the formula 1; and the second material is selected from a compound shown in a formula 2. According to the invention, the first material with a high refractive index is used as the first hole transport layer, the second material with a low refractive index is used as the second hole transport layer, and the structures of the first material and the second material are respectively limited at the same time. The invention overcomes the limitation of a single material or a simple mixed material in the aspects of hole transport and luminous efficiency. .

The invention discloses a red light Micro light emitting diode epitaxial wafer and a preparation method thereof. The epitaxial wafer comprises a GaAs substrate, an N-type layer, a multi-quantum well active layer and a P-type layer which are sequentially arranged from bottom to top, the multi-quantum well active layer comprises a plurality of AlGaInP quantum well layers and quantum barrier layers which are alternately arranged, a hole injection layer is inserted between at least part of quantum well structures, and the hole injection layer is composed of a first N-type doped sub-layer, a P-type doped sub-layer and a second N-type doped sub-layer which are connected in sequence; the materials of the three sub-layers are (Al < x > Ga < 1-x >) < 0.5 > In < 0.5 > P (x is greater than or equal to 0.5 and less than or equal to 0.9), and the doping concentration is in gradient distribution along the thickness direction. By introducing the N-P-N structure hole injection layer, the hole injection efficiency is improved, electron leakage and Mg diffusion are inhibited, and the luminous efficiency of the red light Micro LED is remarkably improved.

The invention provides a preparation method and application of a quantum dot light-emitting diode based on interface modification, and belongs to the technical field of quantum dot materials. The preparation method comprises the following steps: (1) spin-coating PEDOT: PSS-4083 on ITO (Indium Tin Oxide) to obtain a hole injection layer; (2) spin-coating polyvinyl carbazole on the hole injection layer in the step (1) to obtain a hole transport layer; (3) spin-coating pyridine on the hole transport layer in the step (2) to obtain a modification layer; (4) spin-coating ZnCdS / ZnS quantum dot normal octane on the modification layer in the step (3) to obtain a quantum dot film; and (5) spin-coating an Mg-doped ZnO ethanol solution on the quantum dot film in the step (4), and performing high-vacuum evaporation to obtain the quantum dot light-emitting diode. Compared with an original device, the EQE of the prepared quantum dot light emitting diode is improved by 16.5%, and the highest brightness is improved by 12.5%.

The invention relates to an electric injection quantum dot vertical cavity surface emitting laser and a preparation method thereof. The laser structure comprises a substrate, a bottom reflector, a first current expansion layer, a waveguide layer, an electron injection layer, an active layer, a hole injection layer, a second current expansion layer and a top reflector. A corresponding top reflector is arranged in an opening area in the waveguide layer and serves as a resonant cavity of the laser, and a light field is guided by the waveguide layer to be efficiently oscillated and amplified in the resonant cavity. In the preparation process, good lattice matching between the bottom reflector and the substrate is ensured through epitaxial growth, interface defects and stress are reduced, low-cost methods such as spraying, spin coating and ink-jet printing are used, operation is easy and convenient, and large-area preparation can be achieved. The laser realizes bottom light emission, optimizes current injection, improves light emission and heat dissipation performance, controls a resonant cavity light field to improve device performance, and has the advantages of low power consumption, high light beam collimation and the like.

The present invention relates to an organic electroluminescent device comprising a hole injection layer and a hole transport layer, and a display device comprising the organic electroluminescent device.

The present invention relates to a metal complex having a structure of chemical formula (I). The metal complex is applied to an organic light-emitting device which emits deep red or near-infrared light, and shows a lower driving voltage and higher luminous efficiency, and has greatly prolonged service life. Therefore, the metal complex has the potential of being applied in the field of organic light-emitting devices. Also provided is an organic light-emitting device, including a cathode, an anode, and an organic layer. The organic layer is one or more of a hole injection layer, a hole transport layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer; and at least one layer in the organic layer contains the compound of structural formula (I).

According to the deep ultraviolet laser epitaxial structure and the epitaxial growth method thereof provided by the invention, the Al component of the first waveguide layer is linearly and progressively increased from the side close to the electron injection layer to the side close to the quantum well active layer; or the Al component of the second waveguide layer is linearly and progressively decreased from the side close to the quantum well active layer to the side close to the hole injection layer to form refractive index distribution which takes the barrier layer of the quantum well active layer as the highest refractive index point and gradually decreases towards one side (the n-type side or the p-type side), so that the light field is firmly bound near the quantum well active layer, and the light limiting capability is remarkably enhanced; meanwhile, high-low Al components of the p-type side (the second waveguide layer) gradually change to generate a strong polarization electric field, ionization of a p-type doped acceptor (such as Mg) can be promoted, two-dimensional hole gas (2DHG) can be induced, and the hole concentration is improved; the low-high Al components of the n-type side (the first waveguide layer) are gradually changed, so that two-dimensional electron gas can be induced, and the electron concentration is improved.

According to one embodiment, a display device includes an anode, an organic EL element layer including a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer, and a cathode, wherein ΔE2_LUMO is defined as a potential barrier between the electron transport layer and the hole blocking layer, and the light-emitting layer, ΔE2_HOMO is defined as a potential barrier between the hole transport layer and the electron blocking layer, and the light-emitting layer, and each of ΔE2_LUMO and ΔE2_HOMO is 0.1 eV or higher and 0.5 eV or less.

The present disclosure relates to an organic light emitting diode including a first electrode; a second electrode facing the first electrode; a first emitting part positioned between the first and second electrodes and including a first emitting material layer, a hole injection layer between the first electrode and the first emitting material layer and a first hole transporting layer between the hole injection layer and the first emitting material layer, wherein the hole injection layer includes a hole injection material, and the first hole transporting layer includes at least one of a first hole transporting material and a second hole transporting material, and wherein the first hole transporting material and the second hole transporting material are fluorene derivatives having different structures.

The invention discloses a colloidal quantum dot-based broadband super-radiation light-emitting diode and a preparation method thereof, belongs to the technical field of semiconductor devices, and solves the technical problem that the improvement of optical gain is limited due to insufficient spectrum regulation and control precision of colloidal quantum dots in the application of a super-radiation light-emitting diode in the prior art. The diode comprises a distributed Bragg reflector and a bar structure, wherein the bar structure is composed of an ITO cathode, an electron transport layer, a CQD active layer, a hole transport layer, a spacer layer, a current focusing structure layer, a hole injection layer and an Ag anode which are sequentially arranged from bottom to top and composed of the ITO cathode, the electron transport layer, the CQD active layer, the hole transport layer, the spacer layer and the current focusing structure layer; the distributed Bragg reflector is of a transverse Bragg reflection waveguide structure, and the structure comprises a plurality of pairs of alternating layers; the CQD active layer is filled with core-shell colloidal quantum dots; the spacing layer and the current focusing structure layer are of slit structures; and the Ag anode and the distributed Bragg reflector form a transverse cavity structure along the plane direction. The super-radiation light-emitting diode is suitable for the technical fields of broadband optical coherence tomography, gyroscope optical fiber sensing and the like.

The invention discloses an air environment preparation method of a perovskite blue light emitting diode. The air environment preparation method comprises the following steps: S1, preparing a hole injection layer on the surface of an ITO anode; s2, preparing an interface modification layer on the upper surface of the hole injection layer to obtain an intermediate substance; s3, preparing a perovskite blue light emitting layer on the interface modification layer to obtain a substrate with a light emitting layer; s4, evaporating an electron injection layer on the surface of the light-emitting layer; and S5, evaporating a cathode on the surface of the electron injection layer. An alkane anti-solvent (isooctane, n-octane and n-hexane) is introduced for treatment in the process of processing a light-emitting layer by a solution, so that the brightness and the electroluminescent external quantum efficiency of the device are improved, and compared with the traditional process of preparing blue light PELEDs in an air environment by adopting diethyl ether as a treatment solvent, the electroluminescent external quantum efficiency of the device is improved by about one time. The electroluminescent spectrum of the perovskite blue light PeLEDs disclosed by the invention can show relatively good stability under the driving of different voltages and time.

The invention provides a vertical deep ultraviolet LED epitaxial structure and a preparation method thereof. The vertical deep ultraviolet LED epitaxial structure comprises a substrate, an intrinsic layer, a sacrificial layer, a first electron injection layer, an etching barrier layer, a second electron injection layer, a quantum well active layer, an electron barrier layer and a hole injection layer which are sequentially stacked from bottom to top. Wherein the etching barrier layer is made of an n-type doped AlGaN material or an n-type doped AlN material; the mass percentage content of an Al component of the etching barrier layer is 70%-100%; according to the invention, the etching barrier layer with a high Al component is inserted into the electron injection structure, and the high Al-N bond energy and strong chemical stability of the etching barrier layer are utilized, so that the subsequent epitaxial layer can be effectively prevented from being excessively corroded in the dry etching process of the sacrificial layer, and the interface damage is reduced; meanwhile, the etching barrier layer with the high Al component and the electron injection layer form a remarkable barrier difference, the high barrier can guide electrons to be transversely and uniformly diffused in the electron injection layer, and the current density uniformity of the quantum well active layer is improved.

The present disclosure relates to an organic light emitting diode including a first electrode; a second electrode facing the first electrode; a first emitting part positioned between the first and second electrodes and including a first emitting material layer, a hole injection layer between the first electrode and the first emitting material layer and a first hole transporting layer between the hole injection layer and the first emitting material layer, wherein the hole injection layer includes a hole injection material, and the first hole transporting layer includes at least one of a first hole transporting material and a second hole transporting material, and wherein the first hole transporting material and the second hole transporting material are fluorene derivatives having different structures.

A display device includes: a pixel circuit layer on a substrate; anodes on the pixel circuit layer and spaced apart from each other; hole injection layers respectively on the anodes; hole transport layers respectively on the hole injection layers; light emitting layers respectively on the hole transport layers; and a common layer on the light emitting layers.

The invention discloses a GaN-based HEMT device and a preparation method thereof, and belongs to the technical field of semiconductor devices, and the GaN-based HEMT device comprises an HEMT epitaxial structure, a source electrode structure, a grid electrode structure, a drain electrode structure, a stepped mixed drain electrode structure, a passivation layer, a source electrode field plate and a drain electrode field plate. The step-shaped mixed drain electrode structure is located between the grid electrode and the drain electrode and comprises a step-shaped hole injection layer and a second metal layer; the passivation layer covers the whole structure, and the source electrode field plate and the drain electrode field plate are respectively connected with the source electrode and the drain electrode through the through holes. The preparation method comprises the steps of epitaxial growth, etching treatment, ion implantation, metal deposition and the like. By optimizing the field plate design and the stepped mixed drain electrode structure, the breakdown voltage is remarkably improved, the dynamic on-resistance is reduced, the high-frequency characteristic and the reliability are improved, and the device is suitable for a high-voltage large-current scene.

Provided is a liquid composition that can form a constituent layer with excellent film thickness uniformity and that can produce an organic light-emitting device with excellent luminous efficiency without adversely affecting its lifespan. [Solution] A liquid composition used for forming constituent layers of an organic light-emitting device having a laminated structure in which constituent layers including a hole injection layer, a hole transport layer, and a light-emitting layer are stacked. The liquid composition contains a compound having a number-average molecular weight of 1,050 or less and a repeating structural unit represented by formula (1), and an organic solvent. TIFF2026043501000017.tif27170

The application discloses a micro light emitting diode based on polarization orientation difference regulation and a preparation method thereof. The micro light emitting diode comprises a substrate layer, and a plurality of first regions and second regions arranged alternately on the substrate layer; the first region comprises a non-doped nitrogen-polar nitride layer, a first n-type ohmic contact layer and an n-type electrode which are sequentially stacked; the second region comprises a nucleation layer, a non-doped metal-polar nitride layer, a second n-type ohmic contact layer, a multi-quantum well active region, an electron blocking layer, a p-type hole injection layer, a p++-type ohmic contact layer and a p-type electrode which are sequentially stacked; wherein the second region is a light emitting unit of the device, and a mesa structure thereof is defined by wet etching; the first region and the adjacent second region form a homopolar junction in the horizontal direction. By constructing nitride epitaxial structures with different polarities on the same substrate, a lateral carrier migration potential barrier is formed, and at the same time, etching damage is eliminated by wet etching, so that side wall non-radiative recombination is avoided.

The present invention discloses a blue organic electroluminescent device, comprising: a substrate layer; a first electrode on the substrate layer; an organic light-emitting functional layer on the first electrode; a second electrode on the organic light-emitting functional layer; and a cover layer on the second electrode; the organic light-emitting functional layer includes a hole injection layer formed by a hole transport material represented by General Formula (3) or General Formula (4) and a P-type doping material represented by General Formula (1) or General Formula (2), a hole transport layer represented by General Formula (3) or General Formula (4), an electron blocking layer represented by General Formula (5), and a light-emitting layer composed of a first compound selected from General Formula (6) and a doping material represented by General Formula (7) or General Formula (8). The device combination of the present invention can achieve high color purity of the device, reduce the device voltage, and improve the device efficiency and lifespan.

The present application relates to the technical field of organic optoelectronic materials and devices, in particular to a preparation method of white organic light-emitting diodes based on a kind of blue, yellow and other color cMa copper (I) TADF complex with nitrogen heterocyclic carbene-copper-arylamines structure, including three steps: first, synthesis of cMa type copper (I) TADF complex containing blue light emitter and yellow light emitter as representative, obtained by ligand selection, intermediate preparation and purification;Second, construct layered WOLEDs device, from bottom to top in turn for substrate, ITO anode, hole injection layer, hole transport layer, buffer layer, yellow light emitting layer, blue light emitting layer, electron transport layer, electron injection layer and Al cathode;Third, through substrate pretreatment, mbar high vacuum evaporation and nitrogen glove box packaging complete device preparation.The WOLEDs device W1, W2 prepared by the present application has excellent photoelectric performance, the CRI is up to 83, the maximum external quantum efficiency is greater than or equal to 13.3%, has good stability and low cost, and is suitable for lighting and display fields.

The present invention relates to an organic electroluminescent device comprising a hole injection layer and a display device comprising said organic electroluminescent device.

The present invention relates to an organic electronic device comprising an anode layer, a cathode layer, at least one emission layer (EML) and at least one hole injection layer (HIL), wherein the hole injection layer is arranged between the anode layer and the at least one emission layer.

The utility model relates to a double-sub-single-layer OLED device with different middle spacing layers. The double-sub-single-layer OLED device comprises an ITO anode, an m-MTDATA hole injection layer, a C545T light-emitting layer, an NPB hole transport layer or an Alq hole transport layer, a DCM2 light-emitting layer, an Alq electron transport layer and an aluminum and lithium fluoride composite cathode which are arranged in sequence. The C545T light-emitting layer and the DCM2 light-emitting layer are both of a sub-single-layer structure. The OLED device overcomes the defect of quenching caused by high doping concentration in the traditional process, also avoids the defect that the doping concentration is low and is difficult to control, has a simple structure, is easy and convenient to manufacture, and can be widely applied to preparation of OLED devices.

Disclosed in the present application are a display panel and a display apparatus. The display panel comprises a substrate, a first electrode layer, a hole injection layer, a hole transport layer, a first light-emitting layer, an electron transport layer, an electron injection layer and a second electrode layer, which are arranged in a stacked manner, wherein the electron transport layer is doped with a first doping material; the electron injection layer is doped with a second doping material and a third doping material; and the second doping material comprises a metal material, and the third doping material comprises a complex, which is formed by means of a metal material and a second organic material.

The application discloses a deep ultraviolet light emitting diode epitaxial wafer and a preparation method thereof and a deep ultraviolet LED, and the deep ultraviolet light emitting diode epitaxial wafer comprises a substrate and a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, a P-type semiconductor layer, an electron blocking layer, a P-type transition layer and a P-type contact layer which are sequentially stacked on the substrate; the P-type semiconductor layer comprises an Al x GaN gradient layer, an Al m Ga(In n )N hole injection layer and an Al y GaN gradient layer in sequence on the multi-quantum well layer, wherein x ranges from 0.3 to 1, y ranges from 0.3 to 1, 0.3<=m<=0.8 and n<=0.05. The deep ultraviolet light emitting diode epitaxial wafer provided by the application can improve the hole injection efficiency and quality of the P-type material, enhance the matching degree of the active region electron hole, and thus improve the light emitting efficiency of the ultraviolet light emitting diode.

This invention provides a novel organic electroluminescent device, comprising an anode, a cathode, and a light-emitting layer formed between the anode and the cathode. A hole injection layer and a hole transport region are provided between the anode and the light-emitting layer closest to the anode. The hole transport region comprises a first hole transport layer and a second hole transport layer. The material of the first hole transport layer is selected from compounds shown in Formula 1, and the material of the second hole transport layer is selected from compounds shown in Formula 2. Furthermore, the refractive index of the first hole transport layer material is greater than that of the second hole transport layer material. This invention optimizes the overall performance of the device by replacing the material of the first hole transport layer with a material of higher refractive index. Based on this, further defining the structural characteristics of the high-refractive-index material achieves lower power consumption and a longer device lifetime.

The present invention discloses an inverted QLEDs based on a solid phase transfer organic transport layer and its preparation method and application, which belongs to the technical field of light emitting diode preparation. From bottom to top, it includes ITO conductive glass, Zn 1‑x Mg x O electron transport layer, quantum dot light-emitting layer, organic transport layer based on solid phase transfer, hole injection layer and metal anode. The preparation method comprises the following steps: ultrasonically cleaning ITO conductive glass with detergent, deionized water, acetone and isopropyl alcohol respectively; drying the cleaned ITO conductive glass and performing ultraviolet ozone treatment; spin coating Zn on the treated ITO conductive glass 1‑ x Mg x O nanoparticle solution, annealing; taking quantum dot solution and spin coating it on the resultant, annealing; depositing an organic transport layer on the resultant by solid phase transfer method, annealing; spin coating a PEDOT:PSS hole injection layer on the resultant, annealing; and evaporating a metal anode on the resultant.

The invention discloses an organic bifunctional device based on a heat exciton blue light material and a preparation method thereof, and belongs to the technical field of organic photoelectron, the organic bifunctional device comprises a transparent substrate, an anode layer, a hole injection layer, a hole transport layer, an exciton regulation and control layer, an organic active layer, an electron transport layer and a cathode layer, wherein the organic active layer adopts a heat exciton blue light material PyAnTph, the utilization rate of triplet state excitons is optimized by hybridizing a local area-charge transfer state, and the energy level matching design of the exciton regulation and control layer is combined, so that the device can realize efficient blue light emission with EQE greater than or equal to 12% and the brightness of 8000cd / m under an external forward voltage, and the device has a wide application prospect. According to the invention, a full vacuum evaporation process is adopted, the thickness of the total functional layer of the device is less than or equal to 200nm, and the device has the advantages of ultra-thinness, flexibility and simple process, and is suitable for wearable display, environmental monitoring and biosensing integrated systems.

The embodiment of the utility model provides a display panel and a display device. According to the display panel, the step is arranged on the side wall of the second opening, and any point on the interface of the hole transport layer and the hole injection layer and any point on the interface of the hole transport layer and the light emitting layer are arranged at intervals, so that the hole transport layer can cross an inflection point of a hydrophobic group when being formed by arranging the step; a gap exists between the interface of the hole transport layer and the hole injection layer and the interface of the hole transport layer and the light-emitting layer, direct contact between the upper surface of the hole injection layer and the upper surface of the hole transport layer is avoided, contact between the hole injection layer and an electronic layer is avoided, and a leakage path is blocked; the ink does not cross the steps of the pixel definition layer to cause crosstalk between the adjacent sub-pixels, so that the yield of the display panel is improved.

The present invention relates to the technical field of quantum dot light-emitting devices. Specifically, it relates to a quantum dot light-emitting device and a preparation method thereof. The quantum dot light-emitting device includes an ITO substrate, a hole injection layer, a fluoropolymer layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and an electrode layer that are sequentially stacked. In the present invention, a fluoropolymer layer is provided between the hole injection layer and the hole transport layer, and the obtained quantum dot light-emitting device can promote the injection of holes, improve the recombination rate of electron-hole pairs, and enhance the device performance.