250 results about "Hole injection layer" patented technology

An organic light-emitting device comprises an anode, a cathode and an organic layer formed between the anode and the cathode, and the organic layer comprises a hole injection layer, a hole transmission area, an electron blocking layer, a light-emitting area and an electron transmission area. The hole transport region comprises a first material and a second material, the first material and the second material are sequentially evaporated to form two hole transport layers, and the first material is selected from a compound shown in the formula 1; and the second material is selected from a compound shown in a formula 2. According to the invention, the first material with a high refractive index is used as the first hole transport layer, the second material with a low refractive index is used as the second hole transport layer, and the structures of the first material and the second material are respectively limited at the same time. The invention overcomes the limitation of a single material or a simple mixed material in the aspects of hole transport and luminous efficiency. .

The invention provides a preparation method and application of a quantum dot light-emitting diode based on interface modification, and belongs to the technical field of quantum dot materials. The preparation method comprises the following steps: (1) spin-coating PEDOT: PSS-4083 on ITO (Indium Tin Oxide) to obtain a hole injection layer; (2) spin-coating polyvinyl carbazole on the hole injection layer in the step (1) to obtain a hole transport layer; (3) spin-coating pyridine on the hole transport layer in the step (2) to obtain a modification layer; (4) spin-coating ZnCdS / ZnS quantum dot normal octane on the modification layer in the step (3) to obtain a quantum dot film; and (5) spin-coating an Mg-doped ZnO ethanol solution on the quantum dot film in the step (4), and performing high-vacuum evaporation to obtain the quantum dot light-emitting diode. Compared with an original device, the EQE of the prepared quantum dot light emitting diode is improved by 16.5%, and the highest brightness is improved by 12.5%.

According to the deep ultraviolet laser epitaxial structure and the epitaxial growth method thereof provided by the invention, the Al component of the first waveguide layer is linearly and progressively increased from the side close to the electron injection layer to the side close to the quantum well active layer; or the Al component of the second waveguide layer is linearly and progressively decreased from the side close to the quantum well active layer to the side close to the hole injection layer to form refractive index distribution which takes the barrier layer of the quantum well active layer as the highest refractive index point and gradually decreases towards one side (the n-type side or the p-type side), so that the light field is firmly bound near the quantum well active layer, and the light limiting capability is remarkably enhanced; meanwhile, high-low Al components of the p-type side (the second waveguide layer) gradually change to generate a strong polarization electric field, ionization of a p-type doped acceptor (such as Mg) can be promoted, two-dimensional hole gas (2DHG) can be induced, and the hole concentration is improved; the low-high Al components of the n-type side (the first waveguide layer) are gradually changed, so that two-dimensional electron gas can be induced, and the electron concentration is improved.

According to one embodiment, a display device includes an anode, an organic EL element layer including a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer, and a cathode, wherein ΔE2_LUMO is defined as a potential barrier between the electron transport layer and the hole blocking layer, and the light-emitting layer, ΔE2_HOMO is defined as a potential barrier between the hole transport layer and the electron blocking layer, and the light-emitting layer, and each of ΔE2_LUMO and ΔE2_HOMO is 0.1 eV or higher and 0.5 eV or less.

The invention provides a vertical deep ultraviolet LED epitaxial structure and a preparation method thereof. The vertical deep ultraviolet LED epitaxial structure comprises a substrate, an intrinsic layer, a sacrificial layer, a first electron injection layer, an etching barrier layer, a second electron injection layer, a quantum well active layer, an electron barrier layer and a hole injection layer which are sequentially stacked from bottom to top. Wherein the etching barrier layer is made of an n-type doped AlGaN material or an n-type doped AlN material; the mass percentage content of an Al component of the etching barrier layer is 70%-100%; according to the invention, the etching barrier layer with a high Al component is inserted into the electron injection structure, and the high Al-N bond energy and strong chemical stability of the etching barrier layer are utilized, so that the subsequent epitaxial layer can be effectively prevented from being excessively corroded in the dry etching process of the sacrificial layer, and the interface damage is reduced; meanwhile, the etching barrier layer with the high Al component and the electron injection layer form a remarkable barrier difference, the high barrier can guide electrons to be transversely and uniformly diffused in the electron injection layer, and the current density uniformity of the quantum well active layer is improved.

The present disclosure relates to an organic light emitting diode including a first electrode; a second electrode facing the first electrode; a first emitting part positioned between the first and second electrodes and including a first emitting material layer, a hole injection layer between the first electrode and the first emitting material layer and a first hole transporting layer between the hole injection layer and the first emitting material layer, wherein the hole injection layer includes a hole injection material, and the first hole transporting layer includes at least one of a first hole transporting material and a second hole transporting material, and wherein the first hole transporting material and the second hole transporting material are fluorene derivatives having different structures.

A display device includes: a pixel circuit layer on a substrate; anodes on the pixel circuit layer and spaced apart from each other; hole injection layers respectively on the anodes; hole transport layers respectively on the hole injection layers; light emitting layers respectively on the hole transport layers; and a common layer on the light emitting layers.

The invention discloses a GaN-based HEMT device and a preparation method thereof, and belongs to the technical field of semiconductor devices, and the GaN-based HEMT device comprises an HEMT epitaxial structure, a source electrode structure, a grid electrode structure, a drain electrode structure, a stepped mixed drain electrode structure, a passivation layer, a source electrode field plate and a drain electrode field plate. The step-shaped mixed drain electrode structure is located between the grid electrode and the drain electrode and comprises a step-shaped hole injection layer and a second metal layer; the passivation layer covers the whole structure, and the source electrode field plate and the drain electrode field plate are respectively connected with the source electrode and the drain electrode through the through holes. The preparation method comprises the steps of epitaxial growth, etching treatment, ion implantation, metal deposition and the like. By optimizing the field plate design and the stepped mixed drain electrode structure, the breakdown voltage is remarkably improved, the dynamic on-resistance is reduced, the high-frequency characteristic and the reliability are improved, and the device is suitable for a high-voltage large-current scene.

Provided is a liquid composition that can form a constituent layer with excellent film thickness uniformity and that can produce an organic light-emitting device with excellent luminous efficiency without adversely affecting its lifespan. [Solution] A liquid composition used for forming constituent layers of an organic light-emitting device having a laminated structure in which constituent layers including a hole injection layer, a hole transport layer, and a light-emitting layer are stacked. The liquid composition contains a compound having a number-average molecular weight of 1,050 or less and a repeating structural unit represented by formula (1), and an organic solvent. TIFF2026043501000017.tif27170

The application discloses a micro light emitting diode based on polarization orientation difference regulation and a preparation method thereof. The micro light emitting diode comprises a substrate layer, and a plurality of first regions and second regions arranged alternately on the substrate layer; the first region comprises a non-doped nitrogen-polar nitride layer, a first n-type ohmic contact layer and an n-type electrode which are sequentially stacked; the second region comprises a nucleation layer, a non-doped metal-polar nitride layer, a second n-type ohmic contact layer, a multi-quantum well active region, an electron blocking layer, a p-type hole injection layer, a p++-type ohmic contact layer and a p-type electrode which are sequentially stacked; wherein the second region is a light emitting unit of the device, and a mesa structure thereof is defined by wet etching; the first region and the adjacent second region form a homopolar junction in the horizontal direction. By constructing nitride epitaxial structures with different polarities on the same substrate, a lateral carrier migration potential barrier is formed, and at the same time, etching damage is eliminated by wet etching, so that side wall non-radiative recombination is avoided.

The present application relates to the technical field of organic optoelectronic materials and devices, in particular to a preparation method of white organic light-emitting diodes based on a kind of blue, yellow and other color cMa copper (I) TADF complex with nitrogen heterocyclic carbene-copper-arylamines structure, including three steps: first, synthesis of cMa type copper (I) TADF complex containing blue light emitter and yellow light emitter as representative, obtained by ligand selection, intermediate preparation and purification;Second, construct layered WOLEDs device, from bottom to top in turn for substrate, ITO anode, hole injection layer, hole transport layer, buffer layer, yellow light emitting layer, blue light emitting layer, electron transport layer, electron injection layer and Al cathode;Third, through substrate pretreatment, mbar high vacuum evaporation and nitrogen glove box packaging complete device preparation.The WOLEDs device W1, W2 prepared by the present application has excellent photoelectric performance, the CRI is up to 83, the maximum external quantum efficiency is greater than or equal to 13.3%, has good stability and low cost, and is suitable for lighting and display fields.

The present invention relates to an organic electroluminescent device comprising a hole injection layer and a display device comprising said organic electroluminescent device.

The present invention relates to an organic electronic device comprising an anode layer, a cathode layer, at least one emission layer (EML) and at least one hole injection layer (HIL), wherein the hole injection layer is arranged between the anode layer and the at least one emission layer.

The utility model relates to a double-sub-single-layer OLED device with different middle spacing layers. The double-sub-single-layer OLED device comprises an ITO anode, an m-MTDATA hole injection layer, a C545T light-emitting layer, an NPB hole transport layer or an Alq hole transport layer, a DCM2 light-emitting layer, an Alq electron transport layer and an aluminum and lithium fluoride composite cathode which are arranged in sequence. The C545T light-emitting layer and the DCM2 light-emitting layer are both of a sub-single-layer structure. The OLED device overcomes the defect of quenching caused by high doping concentration in the traditional process, also avoids the defect that the doping concentration is low and is difficult to control, has a simple structure, is easy and convenient to manufacture, and can be widely applied to preparation of OLED devices.

The application discloses a deep ultraviolet light emitting diode epitaxial wafer and a preparation method thereof and a deep ultraviolet LED, and the deep ultraviolet light emitting diode epitaxial wafer comprises a substrate and a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, a P-type semiconductor layer, an electron blocking layer, a P-type transition layer and a P-type contact layer which are sequentially stacked on the substrate; the P-type semiconductor layer comprises an Al x GaN gradient layer, an Al m Ga(In n )N hole injection layer and an Al y GaN gradient layer in sequence on the multi-quantum well layer, wherein x ranges from 0.3 to 1, y ranges from 0.3 to 1, 0.3<=m<=0.8 and n<=0.05. The deep ultraviolet light emitting diode epitaxial wafer provided by the application can improve the hole injection efficiency and quality of the P-type material, enhance the matching degree of the active region electron hole, and thus improve the light emitting efficiency of the ultraviolet light emitting diode.

This invention provides a novel organic electroluminescent device, comprising an anode, a cathode, and a light-emitting layer formed between the anode and the cathode. A hole injection layer and a hole transport region are provided between the anode and the light-emitting layer closest to the anode. The hole transport region comprises a first hole transport layer and a second hole transport layer. The material of the first hole transport layer is selected from compounds shown in Formula 1, and the material of the second hole transport layer is selected from compounds shown in Formula 2. Furthermore, the refractive index of the first hole transport layer material is greater than that of the second hole transport layer material. This invention optimizes the overall performance of the device by replacing the material of the first hole transport layer with a material of higher refractive index. Based on this, further defining the structural characteristics of the high-refractive-index material achieves lower power consumption and a longer device lifetime.

The invention discloses an organic bifunctional device based on a heat exciton blue light material and a preparation method thereof, and belongs to the technical field of organic photoelectron, the organic bifunctional device comprises a transparent substrate, an anode layer, a hole injection layer, a hole transport layer, an exciton regulation and control layer, an organic active layer, an electron transport layer and a cathode layer, wherein the organic active layer adopts a heat exciton blue light material PyAnTph, the utilization rate of triplet state excitons is optimized by hybridizing a local area-charge transfer state, and the energy level matching design of the exciton regulation and control layer is combined, so that the device can realize efficient blue light emission with EQE greater than or equal to 12% and the brightness of 8000cd / m under an external forward voltage, and the device has a wide application prospect. According to the invention, a full vacuum evaporation process is adopted, the thickness of the total functional layer of the device is less than or equal to 200nm, and the device has the advantages of ultra-thinness, flexibility and simple process, and is suitable for wearable display, environmental monitoring and biosensing integrated systems.

The embodiment of the utility model provides a display panel and a display device. According to the display panel, the step is arranged on the side wall of the second opening, and any point on the interface of the hole transport layer and the hole injection layer and any point on the interface of the hole transport layer and the light emitting layer are arranged at intervals, so that the hole transport layer can cross an inflection point of a hydrophobic group when being formed by arranging the step; a gap exists between the interface of the hole transport layer and the hole injection layer and the interface of the hole transport layer and the light-emitting layer, direct contact between the upper surface of the hole injection layer and the upper surface of the hole transport layer is avoided, contact between the hole injection layer and an electronic layer is avoided, and a leakage path is blocked; the ink does not cross the steps of the pixel definition layer to cause crosstalk between the adjacent sub-pixels, so that the yield of the display panel is improved.

The invention discloses a color-changing organic light-emitting device and a preparation method and application thereof. The organic light-emitting device comprises an anode, a cathode and an organic functional layer arranged between the anode and the cathode, and the organic functional layer comprises a hole injection layer, a hole transmission layer, an electron blocking layer, a light-emitting layer and an electron transmission layer which are arranged in sequence; the hole transport layer is arranged on the anode side, and the electron transport layer is arranged on the cathode side; the light-emitting layer comprises a blue light fluorescent layer. According to the device, the color changing function is achieved through the proportion change of blue light internal emission and interface exciplex emission.

The application belongs to the field of organic photoelectric functional materials and devices, and particularly relates to a low-temperature cross-linking hole transport material and a synthesis method and application thereof. Two low-temperature cross-linking hole transport materials are successfully prepared by taking 9H-carbazole and 2,7-dibromo-9-butyl-9H-carbazole or 3,6-dibromo-9-butyl-9H-carbazole as raw materials. The two cross-linking hole transport materials have good thermal stability and solvent resistance and low cross-linking temperature. The two materials are applied to a QLED device hole transport layer, which significantly improves the current injection imbalance problem, improves the QLED efficiency, protects the original high charge transport performance of the hole injection layer, and promotes the rapid injection of holes.

The present invention relates to an organic electronic device comprising a substrate, an anode layer, a cathode layer, at least one first light-emitting layer and a hole injection layer wherein the hole injection layer comprises a compound of formula (I) and a compound of formula (III) wherein the hole injection layer is arranged between the anode layer and the at least one first light-emitting layer.

The application discloses a homojunction organic electroluminescent diode and a preparation method and application thereof. The composition of the homojunction organic electroluminescent diode comprises a substrate, a bottom electrode, a first light-emitting unit, a charge generation layer, a second light-emitting unit and a top electrode which are sequentially arranged in layers, the composition of the first light-emitting unit comprises an electron injection layer, a first electron transport layer and a first light-emitting layer, the composition of the charge generation layer comprises a hole transport layer, a first hole injection layer, a metal layer and a second electron transport layer, the composition of the second light-emitting unit comprises a second light-emitting layer and a second hole injection layer, and the host materials of the first electron transport layer, the first light-emitting layer, the hole transport layer, the second electron transport layer and the second light-emitting layer are the same. The homojunction organic electroluminescent diode has the advantages of high luminous brightness, high efficiency, high stability, wide applicable types of preparation materials and the like, and can be used as an excitation light source of an organic solid laser diode.

Including an optoelectronic component: - a substrate (1); - an anode (2) and a cathode (10) - at least one active layer arranged between the anode and the cathode (6), wherein - an amorphous dielectric layer (3) containing or consisting of a metal oxide, a metal nitride or a metal oxynitride is arranged directly on the cathode-side surface of the anode (2), wherein the metal contained in the metal oxide, metal nitride or metal oxynitride is selected from one or more of the metals of the group consisting of aluminium, gallium, titanium, zirconium, hafnium, tantalum, lanthanum and zinc, wherein a hole injection layer (4) having a thickness of less than or equal to 20 nm is arranged directly on the amorphous dielectric layer (3).

This invention relates to a patterned quantum dot light-emitting device and its fabrication method. The patterned quantum dot light-emitting device includes a driving circuit substrate, a light-emitting layer structure, and an electrode layer. The light-emitting layer structure includes a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, and an electron transport layer stacked sequentially, with the latter positioned between the driving circuit substrate and the electrode layer. In the fabrication process of the patterned quantum dots in this application, during the deposition of the layer structure, the hole transport layer and subsequent layers (in the deposition order) are irradiated with lasers of different intensities. The irradiation extends to the hole transport layer, forming staggered and arrayed current blocking portions and pixel units, thus pixelating the hole transport layer and completing the entire fabrication process of the patterned quantum dot light-emitting device. This application can reduce the complexity of the patterned quantum dot light-emitting device process and minimize damage to the quantum dots in the light-emitting layer, thereby achieving high-resolution patterning.

A high-efficiency GaN-based LED chip on graphene and its fabrication method are disclosed, belonging to the field of semiconductor optoelectronic materials and devices technology. It consists sequentially of a substrate layer, a graphene layer, an AlN buffer layer, a GaN template layer, an n-GaN electron injection layer, an InGaN / GaN multi-quantum-well active region, and a p-AlN layer. x Ga 1‑x N electron blocking layer, p-GaN hole injection layer, p ++ The system consists of a GaN ohmic contact layer, an n-type electrode layer, and a p-type electrode layer. The graphene surface is pretreated with nitrogen plasma, which significantly increases the nucleation density of AlN on the graphene surface. Furthermore, the AlN buffer layer includes both low-temperature and high-temperature AlN layers, effectively promoting the lateral merging of AlN nucleation islands, thus facilitating the formation of a smooth, high-quality GaN template layer on the graphene. Based on this high-quality GaN template layer, the luminous efficiency of the LED chip can be significantly improved.

Disclosed in the present disclosure are a heterocyclic compound combination and an organic electroluminescent device. The heterocyclic compound combination comprises a hole injection layer compound and a light-emitting layer compound, the hole injection layer compound is selected from a compound I represented by formula 1, the light-emitting layer compound contains a two-component host material and a dopant material, the two-component host material comprises a first host and a second host, the first host is selected from a compound represented by formula (2), and the second host is selected from a compound represented by formula (3-1) or formula (3-2). By using a hole injection material (a PD-doped material) of the present disclosure, in combination with a GH two-component host material of the present disclosure, and using a first dopant SP of the present disclosure, a prepared device has excellent luminous efficiency and service life. Furthermore, by additionally using a second dopant GD, the luminous efficiency of a prepared sensitized device is further improved, and the device is further optimized.

A conductor device structure and method for fabricating the same is provided that utilizes the vacancy properties of two-dimensional materials to selectively control the semiconductor type of halide perovskite thin films. [Solution] A halide perovskite-based complementary semiconductor device 100 according to an embodiment of the present invention includes a substrate 120, a two-dimensional material layer 140 formed on the upper surface side of the substrate and including a hole injection layer and an electron injection layer, a halide perovskite layer 150 formed on the two-dimensional material layer, and an electrode layer 160 formed on the halide perovskite layer and including a drain electrode 160-1, output electrodes 160-2, 160-3 and a source electrode 160-4.

This invention provides an organic electroluminescent device with efficient hole injection. Compared to traditional hole injection layers, the hole injection layer used in this invention includes an anode modification layer and an organic interface layer. The anode modification layer comprises a rhenium-based oxide. The anode modification layer / organic interface layer significantly improves the ability of holes to be injected from the anode to the hole transport layer (hole injection efficiency), improving the device stability problem caused by carrier imbalance. Furthermore, when the hole injection layer used in this invention is connected to a hole transport layer of suitable thickness, an ohmic contact can be formed, significantly reducing the injection energy barrier (making the hole injection barrier approximately zero), forming a space charge confinement current, further increasing device stability, which is of great significance for improving the performance of organic electroluminescent devices. The rhenium-based oxide used in this application has a moderate melting point, its preparation process is simpler, consumes less energy, and is non-toxic, making it a suitable anode modification material with good application prospects.

This invention proposes a monolithic integrated structure and fabrication method for a hybrid Micro-LED and QLED full-color display device. Blue μLEDs and a bank are epitaxially grown and etched on the same epitaxial substrate, with red and green QLEDs located inside the bank. The red and green QLED structure, from bottom to top, consists of an anode, a hole injection layer, a hole transport layer, a quantum dot emitting layer, an electron transport layer, and a cathode. The blue μLEDs and red and green QLEDs are horizontally distributed on the substrate, with the cathode of the blue μLED connected to the anode of the red and green QLEDs, and vice versa. Red and green QLED pixels are fabricated on the structured blue Micro-LED substrate using inkjet printing technology, integrating a hybrid Micro-LED (PM) full-color display device. This technology avoids the technical challenges of mass transfer, simplifies the fabrication process, and enables high-efficiency display of RGB colors, providing a novel full-color technology solution for the display field.

A display device having a long lifetime is provided. A large-sized display device is provided. A display device includes a first light-emitting device and a second light-emitting device. The first light-emitting device includes a hole-injection layer, a first light-emitting layer, and an electron-transport layer. The second light-emitting device includes a second light-emitting layer. The hole-injection layer contains a first compound and a second compound. The first light-emitting layer contains a third compound that emits light of a first color. The second light-emitting layer contains a fourth compound that emits light of a second color. The electron-transport layer contains a fifth compound. The first compound has a property of accepting electrons from the second compound. The second compound has a HOMO level higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The fifth compound has a HOMO level higher than or equal to −6.0 eV and an electron mobility higher than or equal to 1×10{circumflex over ( )}−7 cm{circumflex over ( )}2 / Vs and lower than or equal to 5×10{circumflex over ( )}−5 cm{circumflex over ( )}2 / Vs when the square root of electric field strength [V / cm] is 600.