499 results about "Hole injection layer" patented technology

The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type semiconductor layer. The multi-quantum well light-emitting layer comprises a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are stacked in sequence, and each of the first sub-layer, the second sub-layer, the third sub-layer and the fourth sub-layer comprises an InGaN quantum well layer and a GaN quantum barrier layer which are periodically and alternately stacked; an electron injection layer is inserted into at least one of the GaN quantum barrier layer of the first sub-layer, the GaN quantum barrier layer of the second sub-layer and the GaN quantum barrier layer of the third sub-layer; and a hole injection layer is inserted into the GaN quantum barrier layer of the fourth sub-layer. By implementing the invention, the electron hole matching degree of the multi-quantum well light-emitting layer can be improved, so that the luminous efficiency of the light-emitting diode is improved.

An organic light-emitting device comprises an anode, a cathode and an organic layer formed between the anode and the cathode, and the organic layer comprises a hole injection layer, a hole transmission area, an electron blocking layer, a light-emitting area and an electron transmission area. The hole transport region comprises a first material and a second material, the first material and the second material are sequentially evaporated to form two hole transport layers, and the first material is selected from a compound shown in the formula 1; and the second material is selected from a compound shown in a formula 2. According to the invention, the first material with a high refractive index is used as the first hole transport layer, the second material with a low refractive index is used as the second hole transport layer, and the structures of the first material and the second material are respectively limited at the same time. The invention overcomes the limitation of a single material or a simple mixed material in the aspects of hole transport and luminous efficiency. .

The embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed on the substrate, and a plurality of subpixels. Each subpixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole-injection layer (HIL) material, additional organic light-emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed on a base structure disposed on the PDL structure and extending laterally past the base structure. Each second overhang is defined by a superstructure disposed on the body structure and extending laterally past the body structure. The HIL material is disposed on and in contact with the anode and disposed adjacent and below the first overhang. The additional OLED material is disposed on the HIL material and extends below the first overhang.

The invention relates to the technical field of photoelectricity, and discloses a Micro LED epitaxial wafer, a preparation method thereof and a Micro LED chip, the Micro LED epitaxial wafer comprises a substrate, and the substrate is sequentially provided with a buffer layer, an N-type GaN layer, a multi-quantum well layer and a P-type GaN layer; the first multi-quantum well layer comprises at least one group of a first InGaN quantum well layer, a first AlGaN / GaN superlattice layer and a first GaN quantum barrier layer which are stacked in sequence, and the second multi-quantum well layer comprises at least one group of a second InGaN quantum well layer, a second AlGaN / GaN superlattice layer and a second GaN quantum barrier layer which are stacked in sequence. And the third multi-quantum well layer comprises at least one group of third InGaN quantum well layer, hole injection layer and third GaN quantum barrier layer which are stacked in sequence. According to the Micro LED epitaxial wafer provided by the invention, the lighting effect of a Micro LED chip under low working current density can be improved.

The invention discloses a red light Micro light emitting diode epitaxial wafer and a preparation method thereof. The epitaxial wafer comprises a GaAs substrate, an N-type layer, a multi-quantum well active layer and a P-type layer which are sequentially arranged from bottom to top, the multi-quantum well active layer comprises a plurality of AlGaInP quantum well layers and quantum barrier layers which are alternately arranged, a hole injection layer is inserted between at least part of quantum well structures, and the hole injection layer is composed of a first N-type doped sub-layer, a P-type doped sub-layer and a second N-type doped sub-layer which are connected in sequence; the materials of the three sub-layers are (Al < x > Ga < 1-x >) < 0.5 > In < 0.5 > P (x is greater than or equal to 0.5 and less than or equal to 0.9), and the doping concentration is in gradient distribution along the thickness direction. By introducing the N-P-N structure hole injection layer, the hole injection efficiency is improved, electron leakage and Mg diffusion are inhibited, and the luminous efficiency of the red light Micro LED is remarkably improved.

The invention provides a positive quantum dot light-emitting diode and a preparation method thereof, and belongs to the technical field of photoelectric materials. The invention provides a positive quantum dot light-emitting diode. The positive quantum dot light-emitting diode comprises an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode from bottom to top, the electron transport layer is a ZnMgO thin film modified by halogen amine salt. According to the invention, the ZnMgO thin film is modified by using the halogen amine salt, so that the conduction band energy level of the ZnMgO electron transport layer can be moved upwards, the interface potential barrier between the electrode and the electron transport layer is increased, excessive electron injection can be blocked, and the carrier injection balance in the device is promoted. Meanwhile, amino cations in the halogen amine salt can passivate a hydroxyl defect state on the surface of ZnMgO, and high-electronegativity halogen ions enter ZnMgO crystal lattices to passivate oxygen vacancy defects, so that interface exciton quenching is reduced, and the radiation recombination efficiency of the device is improved.

The invention provides a preparation method and application of a quantum dot light-emitting diode based on interface modification, and belongs to the technical field of quantum dot materials. The preparation method comprises the following steps: (1) spin-coating PEDOT: PSS-4083 on ITO (Indium Tin Oxide) to obtain a hole injection layer; (2) spin-coating polyvinyl carbazole on the hole injection layer in the step (1) to obtain a hole transport layer; (3) spin-coating pyridine on the hole transport layer in the step (2) to obtain a modification layer; (4) spin-coating ZnCdS / ZnS quantum dot normal octane on the modification layer in the step (3) to obtain a quantum dot film; and (5) spin-coating an Mg-doped ZnO ethanol solution on the quantum dot film in the step (4), and performing high-vacuum evaporation to obtain the quantum dot light-emitting diode. Compared with an original device, the EQE of the prepared quantum dot light emitting diode is improved by 16.5%, and the highest brightness is improved by 12.5%.

The invention relates to an electric injection quantum dot vertical cavity surface emitting laser and a preparation method thereof. The laser structure comprises a substrate, a bottom reflector, a first current expansion layer, a waveguide layer, an electron injection layer, an active layer, a hole injection layer, a second current expansion layer and a top reflector. A corresponding top reflector is arranged in an opening area in the waveguide layer and serves as a resonant cavity of the laser, and a light field is guided by the waveguide layer to be efficiently oscillated and amplified in the resonant cavity. In the preparation process, good lattice matching between the bottom reflector and the substrate is ensured through epitaxial growth, interface defects and stress are reduced, low-cost methods such as spraying, spin coating and ink-jet printing are used, operation is easy and convenient, and large-area preparation can be achieved. The laser realizes bottom light emission, optimizes current injection, improves light emission and heat dissipation performance, controls a resonant cavity light field to improve device performance, and has the advantages of low power consumption, high light beam collimation and the like.

The present invention relates to an organic electroluminescent device comprising a hole injection layer and a hole transport layer, and a display device comprising the organic electroluminescent device.

The invention discloses a heterocyclic compound composition and an organic electroluminescent device. Wherein the heterocyclic compound combination comprises a hole injection layer compound and a light-emitting layer compound, the hole injection layer compound is selected from a first compound shown in the formula 1, the light-emitting layer compound contains a bi-component host material and a doping material, the bi-component host material comprises a first host and a second host, and the doping material comprises a second host and a third host. The first main body is selected from a compound shown in a formula 2, the second main body is selected from a compound shown in a formula 3-1 or a formula 3-2, the hole injection material (PD doped material) is matched with the GH bi-component main body material, and meanwhile, the first doped SP is used, so that the prepared device has excellent luminous efficiency and long service life. And meanwhile, by matching with the second doped GD, the luminous efficiency of the device and the device are further improved through the prepared sensitized device. # imgabs0 #, # imgabs1 #, # imgabs2 # and # imgabs3 #.

The present invention relates to a metal complex having a structure of chemical formula (I). The metal complex is applied to an organic light-emitting device which emits deep red or near-infrared light, and shows a lower driving voltage and higher luminous efficiency, and has greatly prolonged service life. Therefore, the metal complex has the potential of being applied in the field of organic light-emitting devices. Also provided is an organic light-emitting device, including a cathode, an anode, and an organic layer. The organic layer is one or more of a hole injection layer, a hole transport layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer; and at least one layer in the organic layer contains the compound of structural formula (I).

According to the GaN-based LED epitaxial structure, the preparation method thereof and the LED chip provided by the invention, electron leakage is reduced through the electron blocking layer, and meanwhile, the hole injection layer comprising the thin AlN layer is adopted between the multi-quantum well layer and the electron blocking layer in the epitaxial structure, so that the barrier barrier height during hole transport can be reduced, and the hole transport efficiency can be improved. In addition, an effective path for hole tunneling is provided, energy during hole injection is increased, hole injection efficiency is remarkably improved, the concentration of holes injected into the multi-quantum well layer is increased, and then the luminous efficiency of the LED is improved.

The invention belongs to the technical field of photoelectric materials, and relates to an OLED device containing a polydopamine modified carbon nanotube and a preparation method of the OLED device. The anode electrode layer is formed on the substrate; the organic light-emitting unit is formed on the anode electrode layer, the organic light-emitting unit sequentially comprises a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer from bottom to top, and the light-emitting layer is made of a composite material containing polydopamine modified carbon nanotubes; and the cathode electrode layer is formed on the organic light-emitting unit. The polydopamine modification is functional modification, and solves the problems of poor dispersibility and interface cohesiveness of the traditional carbon nanotubes in the OLED device, thereby improving the photoelectric properties of the OLED device.

The invention relates to the field of semiconductors, and discloses a wide bandgap semiconductor cellular structure and a semiconductor device.The wide bandgap semiconductor cellular structure comprises a substrate, an epitaxial layer and a hole injection layer; the epitaxial layer comprises a heterojunction structure, a hole collection layer and a hole barrier layer which are stacked in the first direction; the hole injection layer is stacked on the epitaxial layer; the source electrode is arranged on the side, back to the substrate, of the heterojunction structure, and the substrate is arranged in a floating mode; the drain electrode is arranged on the side, back to the substrate, of the heterojunction structure. In order to solve the problems of low breakdown voltage and poor stability of a cellular structure in the prior art, a leakage current path between a drain electrode and a source electrode is prolonged in the cellular structure through floating arrangement of a substrate, so that the breakdown voltage of a semiconductor device is reduced; and through the combined action of the hole injection layer, the hole collection layer and the hole blocking layer, holes are accumulated in the hole collection layer, accumulated negative charges are shielded, the substrate effect is inhibited, and the stability of the cellular structure is improved.

The invention belongs to the technical field of organic semiconductors, and discloses a compound with a benzobisoxazole structure and an organic electroluminescent device containing the compound. The compound with the benzobisoxazole structure has the following mechanism: # imgabs0 #, which is used as a charge transport material and a charge injection material in the organic electroluminescent device, especially as a hole injection layer material, and can greatly improve the voltage, service life and other properties of the organic electroluminescent device.

The invention discloses a preparation method and application of a micron-sized quantum dot light-emitting diode array device, and the method comprises the steps: sequentially forming a hole injection layer, a hole transmission layer, a patterned insulating layer, a quantum dot light-emitting layer, an electron transmission layer and a top electrode on an indium tin oxide substrate, and preparing the patterned insulating layer through photoresist; quantum dots are spin-coated to form a process route of an array light-emitting layer, electron leakage generated at pixel gaps is inhibited through photoresist, high resolution is achieved, and meanwhile the performance of a recorded Micro-QLED array device is achieved; a novel cross-linked hole transport layer PF8Cz-X is adopted to verify and solve the problem that a photoacid generator component in the photoresist generates strong oxidizing photoacid, and a triphenylamine structure hole transport layer in the QLED device is damaged by a reaction in a free radical coordination binding mode; and physical dissolution of a developing solution in a micro-nano processing technology is avoided by designing a thermal crosslinking group, and a photoetching system which is compatible with a solution processing technology and lossless to the Micro-QLED array device is constructed.

The invention discloses a high-stability GaN bidirectional device which comprises a substrate and a transition layer, a buffer layer, a back barrier layer, a channel layer and a barrier layer which are sequentially stacked on the substrate, a first grid electrode and a second grid electrode are prepared on a first hole injection layer and a second hole injection layer respectively, and the first hole injection layer and the second hole injection layer are located on the barrier layer; the first source electrode and the second source electrode are prepared on the barrier layer in an ohmic contact mode and located on the two sides of the first hole injection layer and the second hole injection layer; the first source electrode, the first hole injection layer, the second hole injection layer and the second source electrode are isolated from one another through passivation layers; from the angle of energy band, the valence band top of the back barrier layer is lower than the valence band top of the channel layer, so that the hole is prevented from being injected into the substrate. The device has the functions of bidirectional conduction and bidirectional voltage resistance, can effectively inhibit a current collapse effect caused by a surface trap and a substrate effect, and has high dynamic stability and low dynamic conduction resistance; the substrate can be connected with any source electrode and can also be electrically suspended so as to improve the breakdown voltage of the device.

According to the deep ultraviolet laser epitaxial structure and the epitaxial growth method thereof provided by the invention, the Al component of the first waveguide layer is linearly and progressively increased from the side close to the electron injection layer to the side close to the quantum well active layer; or the Al component of the second waveguide layer is linearly and progressively decreased from the side close to the quantum well active layer to the side close to the hole injection layer to form refractive index distribution which takes the barrier layer of the quantum well active layer as the highest refractive index point and gradually decreases towards one side (the n-type side or the p-type side), so that the light field is firmly bound near the quantum well active layer, and the light limiting capability is remarkably enhanced; meanwhile, high-low Al components of the p-type side (the second waveguide layer) gradually change to generate a strong polarization electric field, ionization of a p-type doped acceptor (such as Mg) can be promoted, two-dimensional hole gas (2DHG) can be induced, and the hole concentration is improved; the low-high Al components of the n-type side (the first waveguide layer) are gradually changed, so that two-dimensional electron gas can be induced, and the electron concentration is improved.

According to one embodiment, a display device includes an anode, an organic EL element layer including a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer, and a cathode, wherein ΔE2_LUMO is defined as a potential barrier between the electron transport layer and the hole blocking layer, and the light-emitting layer, ΔE2_HOMO is defined as a potential barrier between the hole transport layer and the electron blocking layer, and the light-emitting layer, and each of ΔE2_LUMO and ΔE2_HOMO is 0.1 eV or higher and 0.5 eV or less.

A light-emitting device including an EL layer including a hole-injection layer, a light-emitting layer, and an electron-transport layer from an anode side is provided. The hole-injection layer includes a first substance and a second substance. The light-emitting layer includes a third substance and a fourth substance. The electron-transport layer includes a first electron-transport layer and a second electron-transport layer. The first electron-transport layer includes a fifth substance. A first LUMO level of the fifth substance is lower than a second LUMO level of the fourth substance and a difference between the first LUMO level and the second LUMO level is greater than or equal to 0.15 eV and less than or equal to 0.40 eV.

The present disclosure relates to an organic light emitting diode including a first electrode; a second electrode facing the first electrode; a first emitting part positioned between the first and second electrodes and including a first emitting material layer, a hole injection layer between the first electrode and the first emitting material layer and a first hole transporting layer between the hole injection layer and the first emitting material layer, wherein the hole injection layer includes a hole injection material, and the first hole transporting layer includes at least one of a first hole transporting material and a second hole transporting material, and wherein the first hole transporting material and the second hole transporting material are fluorene derivatives having different structures.

The invention discloses a colloidal quantum dot-based broadband super-radiation light-emitting diode and a preparation method thereof, belongs to the technical field of semiconductor devices, and solves the technical problem that the improvement of optical gain is limited due to insufficient spectrum regulation and control precision of colloidal quantum dots in the application of a super-radiation light-emitting diode in the prior art. The diode comprises a distributed Bragg reflector and a bar structure, wherein the bar structure is composed of an ITO cathode, an electron transport layer, a CQD active layer, a hole transport layer, a spacer layer, a current focusing structure layer, a hole injection layer and an Ag anode which are sequentially arranged from bottom to top and composed of the ITO cathode, the electron transport layer, the CQD active layer, the hole transport layer, the spacer layer and the current focusing structure layer; the distributed Bragg reflector is of a transverse Bragg reflection waveguide structure, and the structure comprises a plurality of pairs of alternating layers; the CQD active layer is filled with core-shell colloidal quantum dots; the spacing layer and the current focusing structure layer are of slit structures; and the Ag anode and the distributed Bragg reflector form a transverse cavity structure along the plane direction. The super-radiation light-emitting diode is suitable for the technical fields of broadband optical coherence tomography, gyroscope optical fiber sensing and the like.

The invention discloses an air environment preparation method of a perovskite blue light emitting diode. The air environment preparation method comprises the following steps: S1, preparing a hole injection layer on the surface of an ITO anode; s2, preparing an interface modification layer on the upper surface of the hole injection layer to obtain an intermediate substance; s3, preparing a perovskite blue light emitting layer on the interface modification layer to obtain a substrate with a light emitting layer; s4, evaporating an electron injection layer on the surface of the light-emitting layer; and S5, evaporating a cathode on the surface of the electron injection layer. An alkane anti-solvent (isooctane, n-octane and n-hexane) is introduced for treatment in the process of processing a light-emitting layer by a solution, so that the brightness and the electroluminescent external quantum efficiency of the device are improved, and compared with the traditional process of preparing blue light PELEDs in an air environment by adopting diethyl ether as a treatment solvent, the electroluminescent external quantum efficiency of the device is improved by about one time. The electroluminescent spectrum of the perovskite blue light PeLEDs disclosed by the invention can show relatively good stability under the driving of different voltages and time.

The invention provides a vertical deep ultraviolet LED epitaxial structure and a preparation method thereof. The vertical deep ultraviolet LED epitaxial structure comprises a substrate, an intrinsic layer, a sacrificial layer, a first electron injection layer, an etching barrier layer, a second electron injection layer, a quantum well active layer, an electron barrier layer and a hole injection layer which are sequentially stacked from bottom to top. Wherein the etching barrier layer is made of an n-type doped AlGaN material or an n-type doped AlN material; the mass percentage content of an Al component of the etching barrier layer is 70%-100%; according to the invention, the etching barrier layer with a high Al component is inserted into the electron injection structure, and the high Al-N bond energy and strong chemical stability of the etching barrier layer are utilized, so that the subsequent epitaxial layer can be effectively prevented from being excessively corroded in the dry etching process of the sacrificial layer, and the interface damage is reduced; meanwhile, the etching barrier layer with the high Al component and the electron injection layer form a remarkable barrier difference, the high barrier can guide electrons to be transversely and uniformly diffused in the electron injection layer, and the current density uniformity of the quantum well active layer is improved.

The present disclosure relates to a binuclear platinum complex luminescent material and application thereof. The binuclear platinum complex luminescent material has the structure of chemical formula (I), exhibiting relatively good luminous efficiency and device lifetime when applied to an organic light-emitting diode. The present disclosure also provides an organic electroluminescent device, including a cathode, an anode, and an organic layer. The organic layer is one or more of a hole injection layer, a hole transport layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer. At least one of the organic layers includes the compound of structural formula (I).

The present disclosure relates to an organic light emitting diode including a first electrode; a second electrode facing the first electrode; a first emitting part positioned between the first and second electrodes and including a first emitting material layer, a hole injection layer between the first electrode and the first emitting material layer and a first hole transporting layer between the hole injection layer and the first emitting material layer, wherein the hole injection layer includes a hole injection material, and the first hole transporting layer includes at least one of a first hole transporting material and a second hole transporting material, and wherein the first hole transporting material and the second hole transporting material are fluorene derivatives having different structures.

A display device includes: a pixel circuit layer on a substrate; anodes on the pixel circuit layer and spaced apart from each other; hole injection layers respectively on the anodes; hole transport layers respectively on the hole injection layers; light emitting layers respectively on the hole transport layers; and a common layer on the light emitting layers.

The invention discloses a GaN-based HEMT device and a preparation method thereof, and belongs to the technical field of semiconductor devices, and the GaN-based HEMT device comprises an HEMT epitaxial structure, a source electrode structure, a grid electrode structure, a drain electrode structure, a stepped mixed drain electrode structure, a passivation layer, a source electrode field plate and a drain electrode field plate. The step-shaped mixed drain electrode structure is located between the grid electrode and the drain electrode and comprises a step-shaped hole injection layer and a second metal layer; the passivation layer covers the whole structure, and the source electrode field plate and the drain electrode field plate are respectively connected with the source electrode and the drain electrode through the through holes. The preparation method comprises the steps of epitaxial growth, etching treatment, ion implantation, metal deposition and the like. By optimizing the field plate design and the stepped mixed drain electrode structure, the breakdown voltage is remarkably improved, the dynamic on-resistance is reduced, the high-frequency characteristic and the reliability are improved, and the device is suitable for a high-voltage large-current scene.

The invention relates to a light-emitting device, a display panel, a display device and terminal equipment, and the light-emitting device comprises an anode which is used for injecting a hole; the cathode is used for injecting electrons; the functional layer is located between the anode and the cathode and at least comprises a first light-emitting unit, a connecting unit and a second light-emitting unit which are sequentially arranged in a stacked mode in the direction from the anode to the cathode. The first light-emitting unit comprises a hole injection layer, a first hole transport layer, a first light-emitting layer and a first electron transport layer which are sequentially arranged along the direction from the anode to the cathode; the connection unit comprises a first charge generation layer, a connection layer and a second charge generation layer which are sequentially arranged along the direction from the anode to the cathode; the connecting layer is used for hole and / or electron transmission; the second light-emitting unit comprises a second electron transport layer, a second light-emitting layer and a second hole transport layer which are sequentially arranged in the direction from the cathode to the anode. A hole blocking layer is reduced, the level potential barrier of each layer is reduced, and the driving voltage is reduced.

The invention discloses a perovskite quantum dot Micro-LED based on interface modification and a preparation method of the perovskite quantum dot Micro-LED. The Micro-LED structurally comprises a distributed Bragg reflector, a quantum dot color conversion unit, a GaN blue light LED and a CMOS (complementary metal oxide semiconductor) integrated circuit substrate. The GaN blue light emitting unit is composed of a plurality of blue light LED pixel points and is integrated on the CMOS integrated circuit substrate. The quantum dot color conversion unit sequentially comprises a glass substrate, a metal electrode, an electrode modification layer, an electron transport layer, a perovskite quantum dot layer, a hole transport layer, a hole injection layer, a transparent electrode and a packaging film from bottom to top, and is used for converting blue light into a required color and realizing a wider color gamut. Wherein bifunctional ether is added on the electron transport layer for optimization. The research not only can solve a plurality of problems existing in the traditional technology, but also can significantly improve the luminous efficiency and environmental stability of the device, and provides a novel and promising technical solution for the development of the next generation of high-performance Micro-LED.