43 results about "Hole injection layer" patented technology

The application discloses a micro light emitting diode based on polarization orientation difference regulation and a preparation method thereof. The micro light emitting diode comprises a substrate layer, and a plurality of first regions and second regions arranged alternately on the substrate layer; the first region comprises a non-doped nitrogen-polar nitride layer, a first n-type ohmic contact layer and an n-type electrode which are sequentially stacked; the second region comprises a nucleation layer, a non-doped metal-polar nitride layer, a second n-type ohmic contact layer, a multi-quantum well active region, an electron blocking layer, a p-type hole injection layer, a p++-type ohmic contact layer and a p-type electrode which are sequentially stacked; wherein the second region is a light emitting unit of the device, and a mesa structure thereof is defined by wet etching; the first region and the adjacent second region form a homopolar junction in the horizontal direction. By constructing nitride epitaxial structures with different polarities on the same substrate, a lateral carrier migration potential barrier is formed, and at the same time, etching damage is eliminated by wet etching, so that side wall non-radiative recombination is avoided.

The present application relates to the technical field of organic optoelectronic materials and devices, in particular to a preparation method of white organic light-emitting diodes based on a kind of blue, yellow and other color cMa copper (I) TADF complex with nitrogen heterocyclic carbene-copper-arylamines structure, including three steps: first, synthesis of cMa type copper (I) TADF complex containing blue light emitter and yellow light emitter as representative, obtained by ligand selection, intermediate preparation and purification;Second, construct layered WOLEDs device, from bottom to top in turn for substrate, ITO anode, hole injection layer, hole transport layer, buffer layer, yellow light emitting layer, blue light emitting layer, electron transport layer, electron injection layer and Al cathode;Third, through substrate pretreatment, mbar high vacuum evaporation and nitrogen glove box packaging complete device preparation.The WOLEDs device W1, W2 prepared by the present application has excellent photoelectric performance, the CRI is up to 83, the maximum external quantum efficiency is greater than or equal to 13.3%, has good stability and low cost, and is suitable for lighting and display fields.

The present invention relates to an organic electroluminescent device comprising a hole injection layer and a display device comprising said organic electroluminescent device.

This invention provides a novel organic electroluminescent device, comprising an anode, a cathode, and a light-emitting layer formed between the anode and the cathode. A hole injection layer and a hole transport region are provided between the anode and the light-emitting layer closest to the anode. The hole transport region comprises a first hole transport layer and a second hole transport layer. The material of the first hole transport layer is selected from compounds shown in Formula 1, and the material of the second hole transport layer is selected from compounds shown in Formula 2. Furthermore, the refractive index of the first hole transport layer material is greater than that of the second hole transport layer material. This invention optimizes the overall performance of the device by replacing the material of the first hole transport layer with a material of higher refractive index. Based on this, further defining the structural characteristics of the high-refractive-index material achieves lower power consumption and a longer device lifetime.

The application belongs to the field of organic photoelectric functional materials and devices, and particularly relates to a low-temperature cross-linking hole transport material and a synthesis method and application thereof. Two low-temperature cross-linking hole transport materials are successfully prepared by taking 9H-carbazole and 2,7-dibromo-9-butyl-9H-carbazole or 3,6-dibromo-9-butyl-9H-carbazole as raw materials. The two cross-linking hole transport materials have good thermal stability and solvent resistance and low cross-linking temperature. The two materials are applied to a QLED device hole transport layer, which significantly improves the current injection imbalance problem, improves the QLED efficiency, protects the original high charge transport performance of the hole injection layer, and promotes the rapid injection of holes.

A high-efficiency GaN-based LED chip on graphene and its fabrication method are disclosed, belonging to the field of semiconductor optoelectronic materials and devices technology. It consists sequentially of a substrate layer, a graphene layer, an AlN buffer layer, a GaN template layer, an n-GaN electron injection layer, an InGaN / GaN multi-quantum-well active region, and a p-AlN layer. x Ga 1‑x N electron blocking layer, p-GaN hole injection layer, p ++ The system consists of a GaN ohmic contact layer, an n-type electrode layer, and a p-type electrode layer. The graphene surface is pretreated with nitrogen plasma, which significantly increases the nucleation density of AlN on the graphene surface. Furthermore, the AlN buffer layer includes both low-temperature and high-temperature AlN layers, effectively promoting the lateral merging of AlN nucleation islands, thus facilitating the formation of a smooth, high-quality GaN template layer on the graphene. Based on this high-quality GaN template layer, the luminous efficiency of the LED chip can be significantly improved.

This invention provides an organic electroluminescent device with efficient hole injection. Compared to traditional hole injection layers, the hole injection layer used in this invention includes an anode modification layer and an organic interface layer. The anode modification layer comprises a rhenium-based oxide. The anode modification layer / organic interface layer significantly improves the ability of holes to be injected from the anode to the hole transport layer (hole injection efficiency), improving the device stability problem caused by carrier imbalance. Furthermore, when the hole injection layer used in this invention is connected to a hole transport layer of suitable thickness, an ohmic contact can be formed, significantly reducing the injection energy barrier (making the hole injection barrier approximately zero), forming a space charge confinement current, further increasing device stability, which is of great significance for improving the performance of organic electroluminescent devices. The rhenium-based oxide used in this application has a moderate melting point, its preparation process is simpler, consumes less energy, and is non-toxic, making it a suitable anode modification material with good application prospects.

This invention discloses a high-resolution quantum dot light-emitting device based on capillary self-assembly using a sacrificial layer and nanoimprinting, and its fabrication method. The method first prepares a hole injection layer and a hole transport layer on a substrate. A sacrificial layer and a charge blocking layer are then prepared on a PDMS soft stamp. A via array is formed on the charge blocking layer, and the sacrificial layer is pressed into the top of silicon pillars, forming a quantum dot light-emitting pixel array. Next, the PDMS stamp containing the quantum dot pixels is flipped over and hot-pressed onto the hole transport layer, and the sacrificial layer is removed by selective solvent dissolution. Finally, an electron transport layer and a top electrode are sequentially prepared on the structure to complete the construction of the QLED device. This invention utilizes a soft stamp and sacrificial layer process to achieve photolithography-free, high-precision, and damage-free quantum dot pixel patterning, effectively solving problems such as low resolution, pixel color mixing, and quantum dot damage in traditional processes. It is particularly suitable for fabricating high-resolution, full-color quantum dot light-emitting diodes.

A display device includes a pixel electrode, a pixel defining layer disposed on the pixel electrode and forming an opening which exposes a portion of the pixel electrode, an auxiliary electrode disposed on the pixel defining layer and the pixel electrode, an intermediate layer disposed on the pixel defining layer and the auxiliary electrode and a common electrode disposed on the intermediate layer. The pixel defining layer includes a recessed portion recessed into the pixel defining layer, the auxiliary electrode includes a first undercut forming portion disposed on the recessed portion and contacting the portion of the pixel electrode, and the intermediate layer includes a hole injection layer, a light-emitting layer and an electron injection layer stacked sequentially. The hole injection layer includes a first portion disposed on the first undercut forming portion and a second portion separated from the first portion and disposed on the recessed portion.

This invention relates to a quantum dot light-emitting diode (LED) based on functional layer interface photocrosslinking modification and its fabrication method, belonging to the field of optoelectronic materials and devices technology. The diode comprises sequentially stacked ITO glass substrate, hole injection layer, organic hole transport layer, quantum dot light-emitting layer, electron transport layer, and cathode. Its core technology lies in introducing an interface modification layer at at least one functional layer interface of the device, formed by photoinduced crosslinking of 4-(3-trifluoromethyl-3H-diazacyclopropene-3-yl)benzoic acid. Optionally, this modification layer further comprises a pentaerythritol tetra(3-mercaptopropionate) post-treatment layer. The interface modification can be located between ITO and the hole transport layer, between the quantum dot layer and the electron transport layer, or between the electron transport layer and the cathode. The fabrication method of this invention is simple, has good compatibility with solution processing technology, and can effectively suppress interfacial ion migration, passivate surface defects, and improve device stability.

An organic light-emitting diode (OLED) and a method of manufacturing the OLED are provided. The OLED includes: a first electrode and a second electrode facing each other; an organic emitting layer between the first electrode and the second electrode; and a hole injection layer between the first electrode and the organic emitting layer, wherein the hole injection layer includes a second metal compound layer and a second metal layer, the second metal compound layer being between the first electrode and the organic emitting layer, and the second metal layer being between the second metal compound layer and the organic emitting layer.

The present invention provides a display device that has the function of detecting an object that is in contact with or close to the display unit. [Solution] A display device having a light-emitting element and a light-receiving element. The light-emitting element has a first pixel electrode, a first functional layer, a light-emitting layer, a common layer, and a common electrode, and the light-receiving element has a second pixel electrode, a second functional layer, a light-receiving layer, a common layer, and a common electrode. The first functional layer has either a hole injection layer or an electron injection layer, and the second functional layer has either a hole transport layer or an electron transport layer. In the light-emitting element, the common layer functions as the other of the hole injection layer or the electron injection layer, and in the light-receiving element, it functions as the other of the hole transport layer or the electron transport layer.

This application relates to the field of semiconductor devices, and specifically discloses a light-emitting array device and a method for fabricating it. The light-emitting array device includes: a substrate, and a buffer layer, an n-type layer, a multiple quantum well layer, a p-type layer, and a hole injection layer sequentially stacked on the substrate. A first nanopillar array is disposed on the side of the substrate away from the buffer layer; a second nanopillar array is disposed on the side of the n-type layer away from the substrate; and a third nanopillar array is formed together in the p-type layer and the hole injection layer. The first, second, and third nanopillar arrays are used to disrupt the total internal reflection interface. This application improves the light extraction efficiency of the light-emitting device through the above methods.

To provide an organic electroluminescent element that suppresses leakage current generation and has a long lifespan. [Solution] An organic electroluminescent element 101 having an anode 3, a cathode 4, one or more light-emitting bands 5, and one or more charge generation transport bands, wherein the light-emitting layer 51 contains a compound represented by formula (2) having at least one deuterium atom as a first host material, and at least one of the charge generation transport bands includes a first organic layer (e.g., a hole injection layer 61), and the first organic layer contains a compound represented by formula (AC1). TIFF2026111279000363.tif66170

The present invention relates to an organic electroluminescent device comprising a hole injection layer and a hole transport layer, and a display apparatus comprising the same.

An organic light-emitting display panel and a preparation method therefor, and a display apparatus. The organic light-emitting display panel comprises: a substrate; a plurality of organic light-emitting diodes, wherein the plurality of organic light-emitting diodes are located on the substrate, and each of the organic light-emitting diodes is provided with a first electrode, a second electrode, and a light-emitting layer and a hole injection layer which are located between the first electrode and the second electrode; and anti-crosstalk isolation electrodes, wherein each of the anti-crosstalk isolation electrodes is located at a gap between two adjacent organic light-emitting diodes, the anti-crosstalk isolation electrodes are configured to connect to a fixed voltage, and a voltage difference between each anti-crosstalk isolation electrode and each second electrode is less than a voltage difference between each first electrode and each second electrode.

An organic electroluminescence device comprises an anode, a cathode and an organic layer formed between the anode and the cathode, the organic layer comprising a hole injection layer, a hole transport region, an electron blocking layer, a light emitting region, an electron transport region; the hole transport region comprises a first material and a second material, the first material and the second material are sequentially evaporated to form two layers of hole transport layer, the first material is selected from the compound shown in formula 1; the second material is selected from the compound shown in formula 2. The first material with high refractive index is arranged as the first hole transport layer, the second material with low refractive index is arranged as the second hole transport layer, and the structure of the first material and the second material is limited respectively, through the comprehensive regulation of the material structure, the energy level and the refractive index of the double-layer hole transport layer, the limitations of single material or simple mixed material in the hole transport and the light emitting efficiency are overcome.

An organoelectroluminescent device according to the present invention can achieve low-voltage driving and high-efficiency luminous characteristics with excellent external quantum efficiency by employing compounds having a characteristic structure as a hole transport material and a dopant material in a hole injection layer or hole transport layer and a light-emitting layer respectively, and thus can be effectively used in industrial applications such as flat display devices, flexible display devices, monochrome or white flat lighting devices, and monochrome or white flexible lighting devices.

This invention relates to the field of electroluminescence technology and discloses an organic electroluminescent device and its application. The organic electroluminescent device includes, from bottom to top, an anode layer, a first coordination-activated electron transport layer, an interface modification layer, a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, a second coordination-activated electron transport layer, an electron injection layer, and a cathode layer. The coordination-activated electron transport layer is composed of a non-alkali metal n-type dopant and an organic electron transport material, wherein the organic electron transport material is composed of a nitrogen-containing heterocyclic chelate ligand without lone pair electron-emitting unit modification. The coordination-activated electron transport layer of this invention possesses high conductivity and the function of controlling the optical microcavity of the device. During optical microcavity control, it does not significantly increase the device driving voltage, avoids pixel crosstalk caused by lateral current leakage, and works synergistically with the interface modification layer and the hole injection layer to solve the heterojunction interface energy level mismatch, thereby improving device lifetime and voltage stability.

This invention relates to the field of semiconductor technology, disclosing a Micro-QLED chip for a projection optical engine, its fabrication method, and a projection optical engine, aiming to replace expensive Micro-LED chips and solve the problem of lead-based quantum dot materials easily polluting the environment. The solution mainly includes: a Micro-QLED chip for a projection optical engine, its fabrication method, and a projection optical engine. The Micro-QLED chip, from bottom to top, includes: a substrate with transparent electrodes, a hole injection layer, a hole transport layer, a quantum dot emitting layer, an electron transport layer, and a TFT driving circuit board with metal electrodes; the quantum dot emitting layer is made of lead-free copper-based mixed halide perovskite quantum dot material; the projection optical engine includes a three-color Micro-QLED chip, a light-combining prism, and a projection lens. This invention reduces chip fabrication costs through improved processes, enhances chip luminous efficiency and color purity, and avoids environmental pollution caused by lead-containing materials, making it suitable for projection display products.

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

The application discloses a preparation method of a tin-based perovskite light-emitting diode and belongs to the technical field of perovskite light-emitting diodes. The method comprises the following steps: synthesizing 2-(1-cyclohexenyl)ethylamine hydroiodide (CHEAI); preparing a perovskite precursor solution containing stannous iodide, CHEAI, tin powder, SnF2 and a reducing acid; spin-coating a PEDOT:PSS hole injection layer on an ITO anode; depositing a light-emitting layer by spin-coating and anti-solvent treatment; and evaporating a TPBi electron injection layer and a LiF / Al cathode. By introducing the reducing acid, the crystallization rate of the tin-based perovskite is effectively slowed down, Sn 2+ oxidation is inhibited, and the defect density of the thin film is reduced. The maximum brightness of the obtained red light PeLEDs reaches 476 cd / m 2 , the external quantum efficiency reaches 0.38%, which is about 41% and 58.3% higher than those of a device without the reducing acid, and the light-emitting peak position is stable at 611 nm.

The application relates to a method for preparing a self-assembled double-layer light extraction micro-nano structure quantum dot light-emitting device. A hole injection layer, a hole transport layer and a quantum dot film, an electron transport layer, a metal cathode and an ITO layer back of a conductive substrate are sequentially deposited on an ITO layer of a transparent conductive substrate to prepare a light extraction micro-nano structure in a self-assembled manner; the light extraction micro-nano structure prepared in the self-assembled manner is operated as follows: (1) a dense and ordered micro-nano structure is formed through a polystyrene microsphere (PS ball) self-assembled technology; (2) the PS ball after self-assembly is transferred to a polyvinyl butyral (PVB) film on the back of the substrate through a fishing method; (3) a flat silicon wafer is placed on the PS ball micro-nano structure to exert a certain pressure, so that the PS ball can be embedded in the PVB film. The application forms a dense and ordered PS ball array through a self-assembled process, and the PS array and the PVB form a closely adhered double-layer micro-nano structure through pressure exertion, so that the light extraction efficiency of the quantum dot light-emitting device is strengthened.

This invention relates to a photosensitizer-modified high-efficiency and stable quantum dot light-emitting diode (QLED) and its preparation method, belonging to the field of optoelectronic display technology. The QLED incorporates the photosensitizer 1-diazo-2-naphthol-4-sulfonic acid (DNS) in its hole injection layer, quantum dot emitting layer, and electron transport layer, and a DNS-modified layer can be formed on the ITO anode surface. The preparation method involves sequentially depositing the aforementioned DNS-doped functional layers using a solution method, followed by a one-step ultraviolet light irradiation treatment to trigger photocrosslinking reactions of DNS at each interface. This invention utilizes a single photosensitizing molecule to simultaneously achieve multiple synergistic optimizations, including enhanced hole injection, protection of the emitting layer from solvent erosion, passivation of electron transport layer defects, and stabilization of the electrode interface, thereby significantly improving the luminous efficiency and operational stability of the QLED. The method is simple and has good compatibility with existing solution processing techniques.

A display panel (100) and a preparation method thereof and a display device, the display panel (100) comprising a first electrode layer (2), an electron transport layer (3), a light-emitting layer (4), a hole transport layer (5), a hole injection layer (6) and a second electrode layer (7) which are sequentially stacked. The material of the hole injection layer (6) comprises a first metal oxide and a second metal oxide, the first metal oxide and the second metal oxide both contain a first metal element, the number of outermost electrons of the first metal element in the first metal oxide is different from that in the second metal oxide, that is, the valence of the first metal element in the two metal compounds is different, and therefore the hole injection capability is improved.

The present application relates to a platinum complex luminescent material. The platinum complex is a compound having the structure represented by chemical formula (I) The present application also provides an organic electroluminescent device, including a cathode, an anode and an organic layer. The organic layer includes one or more of a hole injection layer, a hole transport layer, a light-emitting layer, a hole blocking layer, an electron transport layer, or an electron injection layer. At least one layer of the organic layer contains the compound represented by formula (I).

The application belongs to the field of electroluminescent devices, and particularly relates to a quantum dot electroluminescent device with a gradient of disorder degree of a light-emitting layer. The device comprises a substrate, a device anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a device cathode arranged in sequence. The quantum dot light-emitting layer is stacked by a plurality of colloidal nanocrystal monolayer self-assembled films. The average energy of the electronic state density distribution and the average size of nanocrystals of each monolayer self-assembled film are the same. The width of the electronic state density distribution of the highest occupied state orbital and the lowest unoccupied state orbital and the width of the nanocrystal size distribution of each monolayer self-assembled film monotonically decrease along the normal direction of the substrate with the increase of the distance from the hole transport layer-quantum dot layer interface, and finally tend to a constant. The scheme breaks through the scheme of improving hole injection based on the energy level matching theory, reduces the hole injection barrier between the hole transport layer and the quantum dot layer through the gradient change of the disorder degree, and improves the light-emitting performance of the device.

The application relates to an OLED display panel and a preparation method thereof. The preparation method of the OLED display panel comprises the following steps: forming patterns of an anode layer and patterns of pixel defining walls; forming patterns of a hole injection layer; forming patterns of a hole transport layer; forming an integral layer pattern of a light-emitting layer, and forming a plurality of independent light-emitting unit areas through a patterning process, each of the light-emitting unit areas being formed in a pixel area defined by the pixel defining walls. When forming a final pattern of the light-emitting layer, the integral layer pattern of the light-emitting layer is first formed, and then the patterning process is used to form the light-emitting unit areas in the pixel areas respectively. The light emitted by the light-emitting unit areas is directly transmitted or irradiated on a quantum dot layer to generate light of other colors for display. The application does not need to rely on FMM, can reduce the process cost and the process difficulty, and is not limited by the size of FMM, and is suitable for generating large-size OLED display panels.

The application discloses a solution-processed light-emitting layer and a narrow-band organic electroluminescent device with a co-operated evaporation phosphor sensitized layer, and a preparation method and application thereof. The organic electroluminescent device comprises a substrate, a hole injection layer, a hole transport layer, a solution-processed light-emitting layer, an evaporation sensitized layer, an electron transport layer, an electron injection layer and a metal electrode in sequence. The terminal light-emitting layer is formed by solution processing, and the sensitized layer is formed by evaporation, so that the sensitizer can be introduced into the device in the form of an independent functional layer, thereby reducing the dependence on the direct solution blending condition, adjusting the sensitized layer thickness, the sensitizer concentration and the interlayer spatial relationship, optimizing the exciton generation and energy transfer process, reducing the local exciton density, weakening the exciton-exciton and exciton-polaron annihilation, and thus improving the external quantum efficiency, the efficiency roll-off and the working stability of the device.