143 results about "Thin film encapsulation" patented technology

A display apparatus includes: a substrate including a display area and a peripheral area around the display area, the substrate having a bent portion; a plurality of display elements in the display area; and a thin film encapsulation layer over the plurality of display elements and including a first encapsulation layer, a second encapsulation layer over the first encapsulation layer, and an organic encapsulation layer between the first encapsulation layer and the second encapsulation layer, wherein the second encapsulation layer includes a plurality of inorganic thin layers and a plurality of organic thin layers alternately arranged, and a thickness of the second encapsulation layer is equal to or less than a thickness of the first encapsulation layer.

A display device includes: a base layer including a display area (DA) and a non-DA; a circuit element layer on the base layer and including: a power supply electrode (PSE) overlapping the non-DA, circuit elements, and a shielding electrode connected to the PSE and overlapping some of the circuit elements; a display element layer on the circuit element layer and including: a light emitting element including a first electrode, a light emitting unit, and a second electrode, and a connection electrode connecting the second electrode to the PSE and including first through-holes; a thin film encapsulation layer (TFEL) on the display element layer and including an organic layer overlapping the DA; and an input sensing layer on the TFEL and including sensing electrodes and sensing signal lines connected to the sensing electrodes. The sensing signal lines overlap the connection electrode. Some of the first through-holes overlap the shielding electrode.

The utility model provides a display substrate and a display device.The display substrate comprises a substrate with a via hole, a blocking dam located in the peripheral area of the hole, a plurality of isolation columns located on the side, away from a display area, of the blocking dam, and a blocking structure located on the side, away from the blocking dam, of the isolation columns; the thin film packaging layer is positioned on one side, far away from the substrate, of the blocking dam; wherein the hole peripheral area is arranged around the via hole, and the display area is arranged around the hole peripheral area; wherein the thin film packaging layer covers the display area, and extends to one side, deviating from the substrate, of the barrier structure through the barrier dam and the plurality of isolation columns; at least one inorganic layer is arranged between the plurality of isolation columns and the substrate; the blocking structure is used for blocking propagation of cutting cracks.

The invention relates to the technical field of perovskite solar cell functional thin film packaging, in particular to a solar cell with a perovskite active layer packaged by a double-sided thin film and a preparation method of the solar cell. Al2O3 is used for depositing a layer of Al2O3 thin film between the perovskite active layer and a P-type carrier transport layer (hole transport layer HTL); a layer of SiO2 thin film is deposited between a perovskite active layer and an N-type carrier transport layer (electron transport layer ETL), and a double-sided thin film wrapping layer is formed by an Al2O3 thin film and the SiO2 thin film; through the design and preparation method of the Al2O3 / SiO2 double-sided thin film packaging perovskite active layer, the core stability problem of the perovskite active layer is effectively solved. The double-sided packaging structure can efficiently block water and oxygen permeation, and the perovskite is prevented from being decomposed due to water and oxygen erosion; meanwhile, diffusion of metal electrode ions to a perovskite layer and migration of halogen ions in perovskite to the electrode can be inhibited, bidirectional damage is reduced, and the sensitivity of perovskite to water and oxygen and performance degradation caused by interface ion migration are relieved fundamentally.

The invention discloses a flexible sensor with pressure and humidity sensing functions and a preparation method thereof, and relates to the technical field of flexible electronics and sensing devices, and the flexible sensor comprises a microporous moisture-permeable protective layer, a dual-mode composite sensing layer, a pressure-sensitive microstructure layer, an elastomer protective layer and a thin film packaging layer which are sequentially attached from top to bottom, the dual-mode composite sensing layer comprises a humidity sensing layer, a film base material and a pressure sensing electrode layer, the humidity sensing layer is arranged on one side of the film base material, the pressure sensing electrode layer is arranged on the other side of the film base material, and the pressure sensing electrode layer is oppositely attached to the fingerprint-imitating microstructure of the pressure-sensitive microstructure layer; the pressure-sensitive microstructure layer is arranged in the gap of the elastomer protection layer, and the film packaging layer covers the pressure-sensitive microstructure layer and the elastomer protection layer. The flexible sensor provided by the invention can realize efficient sensing of pressure and humidity, and has wide application prospects in the fields of robot interaction, intelligent prostheses and the like.

This invention provides a flexible display panel, comprising: a display area and a border area surrounding the display area. The border area includes an upper border area, a lower border area, and a side border area connecting the upper and lower border areas. The upper border area includes at least one pyroelectric sensing area, which is provided with: a flexible substrate; a thin-film encapsulation layer on the flexible substrate; and a pyroelectric sensor located on the side of the thin-film encapsulation layer away from the flexible substrate. The pyroelectric sensor generates electrical signals of different intensities upon receiving infrared radiation of different intensities. The flexible display panel provided by this invention does not require an opening in the sensing area to accommodate the sensor, enabling a full-screen display.

A display device may include a substrate, a light emitting structure on the substrate, a thin film encapsulation layer on the light emitting structure, a color filter layer on the thin film encapsulation layer and including a red color filter selectively transmitting a red light and a blue color filter selectively transmitting a blue light, and an overcoat layer, exhibiting two or more absorption wavelength bands and configured to provide wavelength-selective filtering including a green wavelength band, on the color filter layer and including at least one selected from a dye and a pigment, wherein an upper surface of the red color filter may be lower than an upper surface of the blue color filter.

This invention discloses a silicon-based OLED device with an inverted trapezoidal sharp-corner stress-blocking structure and its fabrication method, belonging to the field of display panel packaging technology. The device includes a CMOS driving substrate, a pixel anode, a PDL pixel definition layer, an OLED functional layer and a cathode layer, a TFE thin-film encapsulation layer, a Fill planarization optical adhesive layer, a Dam (dam) barrier, and an encapsulation cover plate, stacked sequentially. The PDL pixel definition layer has stress-blocking units with inverted trapezoidal protrusions on the outer edge of the AA area. The Fill adhesive layer fills the grooves between the protrusions, with its top surface higher than the top surface of the protrusions, forming a flat surface that supports the Dam. The TFE encapsulation layer completely covers the dicing area. This invention can efficiently block wafer dicing stress, avoid encapsulation layer cracking, eliminate the need to etch the dicing encapsulation layer, and simplify the process. It also solves the problems of Dam barrier collapse and adhesive overflow, significantly improving device mass production yield and reliability, and exhibiting strong compatibility with existing mass production processes.

The invention provides a micro display screen light field control structure and a preparation method thereof, and relates to the technical field of micro display. Comprising a substrate, a silicon-based OLED device, a thin film packaging layer and a liquid crystal control layer, wherein a pixel definition layer with a specific inverted trapezoidal structure is arranged on the substrate; the silicon-based OLED device is evaporated on the substrate; the thin film packaging layer covers the silicon-based OLED device and forms a water vapor isolation layer; the cover plate glass is carved into a strip-shaped conductive thin film and distributed with a strip-shaped cathode of the silicon-based OLED device in a crossed mode, the driving circuit is used for controlling the deflection state of liquid crystal molecules, and the silicon-based OLED device comprises a chiral OLED device film layer structure and is used for emitting circularly polarized light. According to the invention, the light field distribution can be stably regulated and controlled, the high-quality naked-eye 3D display effect is realized, and the stable operation of the silicon-based OLED device is effectively ensured.

Embodiments described herein relate to an optical device and a method of forming an optical device. The optical device includes a substrate, an irradiation source, a capping layer, an encapsulation layer, and a passivation layer. The encapsulation layer includes a first atomic layer deposition (ALD) layer, a chemical vapor deposition (CVD) layer, and a second ALD layer. The method includes: disposing a capping layer over an illumination layer, the illumination layer disposed over a substrate in a processing chamber; disposing a first atomic layer deposition (ALD) layer over the capping layer; disposing a chemical vapor deposition (CVD) layer over the first ALD layer; disposing a second ALD layer over the CVD layer; and disposing a passivation layer over the second ALD layer.

A display device, a method of manufacturing the display device, and an electronic device are provided. The display device includes: a light emitting element layer disposed on a substrate; a thin film encapsulation layer disposed on the light emitting element layer; a counter substrate facing the substrate; a color filter layer disposed on a surface of the counter substrate and defining a light blocking region and a light transmitting region; a wavelength conversion layer disposed on the color filter layer; and a filling layer disposed between the wavelength conversion layer and the thin film encapsulation layer, in which the wavelength conversion layer includes: a bank overlapping the light blocking region; light-transmitting members disposed between portions of the bank and spaced apart from each other; and organic layers spaced apart from each other and covering the light-transmitting member, in which the bank is interposed between the organic layers, and lower surfaces of the organic layers and lower surfaces of the bank are disposed on the same layer.

A display device includes: a base layer including a light emitting area, a sensing area, and a non-light-emitting area disposed between the light emitting area and the sensing area; a light emitting element disposed in the light emitting area; an optical sensing element disposed in the sensing area; a capping layer disposed on the light emitting element and the optical sensing element and overlapping the light emitting area, the sensing area, and the non-light-emitting area; an inorganic layer disposed on the capping layer and including a first opening overlapping the sensing area; and a thin film encapsulation layer disposed on the inorganic layer and including a first encapsulation inorganic layer, an encapsulation organic layer disposed on the first encapsulation inorganic layer, and a second encapsulation inorganic layer disposed on the encapsulation organic layer.

The invention belongs to the related technical field of thin film packaging ink-jet printing, and particularly relates to a thin film packaging ink-jet printing process optimization method which comprises the following steps: initializing process parameters, and dividing a thin film packaging ink-jet printing process into four core stages of liquid drop jetting, liquid drop flying, liquid drop deposition and UV curing, through multi-source data fusion and data-driven model training, coupling characteristics of four stages of modeling are realized, data-driven models of all the stages are connected in series, through an end-to-end process link, liquid drop movement and a film forming process are accurately predicted, and collaborative optimization of process parameters is effectively completed in combination with a multi-target optimization model. According to the method, the optimization efficiency can be remarkably improved, and the method can be widely applied to ink-jet printing manufacturing process optimization and quality control in the fields of flexible electronics, organic photoelectricity and the like.

The utility model relates to the field of organic light-emitting diodes, in particular to an anti-peeping organic light-emitting display device, a preparation method thereof and electronic equipment with an OLED display screen. The organic electroluminescence display device comprises a back plate, an electroluminescence pixel layer, a thin film packaging layer, an R cholesteric phase film layer, a G cholesteric phase film layer, a B cholesteric phase film layer, a polaroid and a covering film layer which are stacked in sequence. A red light pixel region, a green light pixel region and a blue light pixel region which are positioned at intervals by PDL are respectively arranged in the electroluminescent pixel layer; each cholesteric membrane layer is composed of a cholesteric region and a transparent region; according to the design scheme of the patterned R, G and B-CLC laminated brightness enhancement film and the design of the side-by-side and uniform pitch structure of the R, G and B-CLC Planar State region, an OLED device with low power consumption and peep-proof characteristics can be constructed.

This invention discloses a method for fabricating a high-efficiency Micro-OLED structure, belonging to the field of OLED display technology. Addressing the problems of insufficient brightness, severe large-angle scattering light loss, and bottlenecks in improving light extraction efficiency in existing silicon-based Micro-OLEDs, this invention fabricates a silicon dioxide / silicon nitride bilayer dielectric layer on a CMOS substrate. Utilizing the difference in etching rates between the two layers, a parabolic reflective bowl anode is fabricated. The pixel definition layer, organic light-emitting layer, thin-film encapsulation layer, color filter layer, and planarization layer are then fabricated sequentially. Finally, a microlens array coaxial with the reflective bowl is fabricated, forming a synergistic light-gathering system. This invention can significantly reduce internal light loss in the device, significantly improve peak brightness and light extraction efficiency, is compatible with existing mass production processes, and meets the high-brightness application requirements of AR / VR near-eye displays.

The invention discloses a MicroOLED inorganic and organic laminated thin film and cover plate compounded non-contact packaging structure and a preparation method thereof, and relates to the technical field of MicroOLED packaging. The packaging structure comprises a substrate and a packaging cover, the substrate and the packaging cover are bonded through a packaging layer, and a MicroOLED layer is arranged in the packaging cover in a non-contact mode. The packaging layer is of a laminated film structure formed by alternately depositing inorganic and organic materials. Compared with the prior art, after the packaging layer is made into the organic-inorganic laminated film, through the decoupling effect of the organic layer, pinholes or other defects are filled up, a diffusion channel of water vapor becomes zigzag, a diffusion path is prolonged, the packaging quality is guaranteed, and the service life of packaging is prolonged; and a packaging mode of combining the thin film and the cover plate is adopted, so that the condition of interlayer separation when the device is used due to direct contact between the cover plate or the thin film packaging layer and the MicroOLED layer is avoided, and the service life of the device is further prolonged.

The invention belongs to the technical field of microelectronics, and more particularly relates to a wafer level vacuum packaging structure and method for a micromechanical resonator, the structure comprises a cavity formed by a thin film packaging structure and a resonator substrate, and a resonator vibration part is suspended in the cavity through a support structure connected with the substrate; the thin film packaging structure is composed of a supporting layer, a getter layer and a packaging layer. The getter layer is embedded in the supporting layer; the packaging layer is composed of two or more than two layers of thin films and comprises two or more than two different materials. According to the packaging layer, the residual stress in the thin film packaging structure is regulated and controlled by adjusting the thickness ratio of different film layers, and the mechanical reliability of the packaging structure is improved; a getter material is embedded in a thin film packaging structure, and activation is realized by utilizing high temperature of an epitaxial growth polycrystalline silicon process, so that the high vacuum degree of a packaging chamber is ensured.

A display device includes a substrate, a light emitting diode disposed on the substrate and that emits light that has a preset color, a capping layer disposed on the light emitting diode and that has a thickness of about 540 angstroms to about 640 angstroms, and a thin film encapsulation layer disposed on the capping layer. As the capping layer has a predetermined thickness, a reflectance of external light is reduced, a color bleeding phenomenon is reduced, and the luminous efficiency of the light emitting diode is increased.

A display device includes, a display panel including a light-emitting element layer disposed on a substrate, a thin-film encapsulation layer disposed on the light-emitting element layer, a touch electrode layer disposed on the thin-film encapsulation layer, a display area, the light-emitting element layer being located in the display area, and a non-display area disposed around the display area, and a resin pattern disposed on and directly contacting the touch electrode layer. The non-display area includes a first non-display area disposed around the display area, and a second non-display area spaced apart from the display area, the first non-display area being disposed between the display area and the second non-display area in a plan view. The resin pattern is disposed in the second non-display area in a plan view.

A display device includes a substrate, a light emitting diode disposed on the substrate and that emits light that has a preset color, a capping layer disposed on the light emitting diode and that has a thickness of about 540 angstroms to about 640 angstroms, and a thin film encapsulation layer disposed on the capping layer. As the capping layer has a predetermined thickness, a reflectance of external light is reduced, a color bleeding phenomenon is reduced, and the luminous efficiency of the light emitting diode is increased.

The utility model relates to thin film packaging technical field discloses a kind of OLED screen module thin film packaging machine, including bottom plate and top plate, the middle part of bottom plate is fixedly connected with cylinder two, the output end of cylinder two is fixedly connected with connecting column, the bottom of connecting column is provided with round plate, the top of round plate is fixedly connected with cross plate, multiple square grooves are set in the top of cross plate, the inner wall of square groove is set with sliding slot one, the outer wall of connecting column is fixedly connected with multiple short boards one, the outer wall of short board one is rotatably connected with short board two, the outer wall of short board two is fixedly connected with connecting plate one, the top of connecting plate one is fixedly connected with fixed block, in the utility model, the linkage structure driven by cylinder two, fixed block and clamp can be driven to the material of specified position to carry out fixed limit, avoid material to occur deviation in film sealing process, provide stable basis for subsequent film sealing.

The application provides a thin film packaging structure and a display device. The thin film packaging structure comprises a composite packaging layer, the composite packaging layer comprises a plurality of first barrier units, a plurality of buffer units and dry fillers, the first barrier units are arranged at intervals, the buffer units are embedded between two adjacent first barrier units; the first barrier unit has a receiving groove, and the dry fillers are filled in the receiving groove. The thin film packaging structure of the application arranges the buffer units and the first barrier units at intervals, then uses the buffer units to improve the flexibility of the whole thin film packaging structure, uses the buffer device to absorb the force received by the thin film packaging structure, so as to avoid cracks and gaps in the thin film packaging structure during production or use, and then is beneficial to improve the water and oxygen blocking ability of the thin film packaging structure. In addition, the receiving groove is filled with dry fillers to store water and oxygen entering the thin film packaging structure through the dry fillers, so as to further improve the water and oxygen blocking ability of the thin film packaging structure.

A display module includes a display area and a non-display area disposed outside the display area on a plane. The display module includes a base layer, a circuit device layer, a display device layer, a thin film encapsulation layer, and a touch sensing layer. An inorganic layer of the touch sensing layer contacts an inorganic layer of the circuit device layer exposed by an organic layer of the circuit device layer. An inorganic layer of the thin film encapsulation layer is disposed between the inorganic layer of the touch sensing layer and the inorganic layer of the circuit device layer to block a moisture penetration path which causes delamination of the thin film encapsulation layer.

The invention discloses a manufacturing method and application of a light-emitting layer of an OLED (Organic Light Emitting Diode) display panel. The manufacturing method comprises the following steps: forming anodes of three sub-pixels on a substrate; depositing a first sacrificial layer on the substrate; performing graphical processing on the first sacrificial layer to expose the anode of the first sub-pixel, and segmenting the first sacrificial layer covering the anode region of the second sub-pixel and the anode region of the third sub-pixel; preparing a first sub-pixel light-emitting unit on the anode region of the first sub-pixel and packaging the first sub-pixel light-emitting unit; depositing a second sacrificial layer on the first thin film encapsulation layer; exposing an anode region of the second sub-pixel, and preparing a second sub-pixel light-emitting unit and a second thin film packaging layer; depositing a third sacrificial layer on the second thin film packaging layer; exposing an anode region of the third sub-pixel, and preparing and packaging a third sub-pixel light-emitting unit; and stripping all the sacrificial layers remaining above all the sub-pixels. The light-emitting layer manufactured by the method has the advantages of high precision, high aperture opening ratio and high brightness.

Disclosed are a display panel, a manufacturing method thereof and a display device. The display panel includes a substrate; a plurality of organic light emitting elements, which are located on a side of the substrate; a film encapsulation layer, which is located on a side of the plurality of organic light emitting elements facing away from the substrate; wherein the film encapsulation layer covers the plurality of organic light emitting elements, the film encapsulation layer comprises a first inorganic layer, a lens layer and a second cover layer, the lens layer is located between the first inorganic layer and the second cover layer, and the second covering layer is located on a side of the first inorganic layer facing away from the plurality of organic light emitting elements; wherein the lens layer comprises a plurality of lenses, and a material of the second cover layer is an inorganic material.

Provided is a display device including a light emitting element layer disposed on a substrate, a thin-film encapsulation layer disposed on the light emitting element layer, a counter substrate facing the substrate, a color filter layer disposed on a surface of the counter substrate and having light transmitting areas and a light blocking area defined, a wavelength conversion layer disposed on the color filter layer, and a filling layer disposed between the wavelength conversion layer and the thin-film encapsulation layer, wherein the wavelength conversion layer includes, a bank overlapping the light blocking area, light transmitting members disposed between portions of the bank and spaced apart from each other, and organic layers spaced apart from each other with the bank interposed between the organic layers and covering the light transmitting members, and lower surfaces of the organic layers and a lower surface of the bank are disposed on a same layer.

Disclosed is a display device including an organic light emitting display panel including a thin film encapsulation layer; a first conductive layer directly on the thin film encapsulation layer; a second conductive layer on the thin film encapsulation layer, the second conductive layer being on a layer other than the first conductive layer; at least one inorganic layer on the thin film encapsulation layer and having a density of about 2.05 g / cm 3 to about 2.4 g / cm 3 ; an organic layer on the at least one inorganic layer; and a window facing the organic light emitting display panel, the first conductive layer, the at least one inorganic layer, and the organic layer being between the window and the organic light emitting display panel. In the display device according to an embodiment of the disclosure, generation of bubbles can be inhibited or reduced.

A display device including: a display panel including a display area; and a touch array disposed on the display panel, wherein the display panel includes: a substrate; transistors disposed on the substrate; an insulating layer covering first electrodes and second electrodes of the transistors; light emitting elements disposed on the insulating layer, the light emitting elements being electrically connected to the first electrodes of the transistors; and a thin film encapsulation layer covering the light emitting elements, wherein the display area is divided into a plurality of sub-areas, and wherein the insulating layer has different thicknesses in the plurality of sub-areas.

The invention relates to a display device, an electronic device, and a method for manufacturing the display device. The display device includes: a substrate including an emission area and a non-emission area; a display element layer including an emission layer disposed in the emission area of the substrate; the thin film encapsulation layer is arranged on the display element layer, and the thin film encapsulation layer comprises a first encapsulation layer, a second encapsulation layer and a third encapsulation layer; and a polarizing film disposed on the thin film encapsulation layer. The third encapsulation layer includes: a first layer having a hole; a second layer disposed on the first layer and having a film density higher than that of the first layer; and a third layer disposed on the second layer and having a hole.

A semiconductor chip including a plurality of first pads, a plurality of second pads, a plurality of first bumps, and a plurality of second bumps is provided. The first pads and the second pads are arranged along a direction of a long side of an active surface of the semiconductor chip. The first bumps are disposed on the first pads, and configured for a chip probe test. The second bumps are disposed on the second pads, and not for the chip probe test. A size of the first bump is larger than a size of the second bump.