55444 results about "Photochemistry" patented technology

The embodiment of the invention relates to the field of photovoltaic technology, and provides a solar cell and a preparation method thereof, and a photovoltaic module, so as to avoid the electric leakage condition of doped regions with different doping types, thereby improving the photoelectric conversion efficiency. The solar cell comprises a substrate which comprises a front surface and a back surface which are oppositely arranged; the back surface of the substrate comprises a first doped region and a second doped region which are sequentially arranged at an interval, and an insulating region arranged between the first doped region and the second doped region; the doped polycrystalline silicon passivation contact structure is arranged in the first doped region, the doped amorphous silicon structure is arranged in the second doped region, and the passivation layer is arranged in the insulating region; the doped polycrystalline silicon passivation contact structure comprises a tunneling oxide layer and a doped polycrystalline silicon layer which are sequentially laminated on the back surface of the substrate; the doped amorphous silicon structure comprises a doped amorphous silicon layer, and the doped polycrystalline silicon layer and the doped amorphous silicon layer are different in doping type; wherein the passivation layer is not overlapped with the doped polycrystalline silicon passivation contact structure and the doped amorphous silicon structure respectively along the thickness direction of the substrate.

The disclosure relates to a CFET device (100) comprising: a bottom FET device (130) and a top FET device (140) stacked on top of the bottom FET device (130), the bottom FET device (130) comprising a bottom channel nanostructure (132) and a bottom gate electrode (134) comprising a side gate portion (134a) arranged along a first side surface (132a) of the bottom channel nano structure, and the top FET device (140) comprising a top channel nanosheet (142) and a top gate electrode (144) configured to define a tri-gate with respect to the top channel nanosheet and comprising a side gate portion (144b) arranged along a second side surface (142b) of the top channel nanosheet, wherein the side gate portion (134a) of the bottom gate electrode (134) defines a via contact portion protruding outside the top gate electrode (144) and the first side surface (142a) of the top channel nanosheet (142); and atop gate contact via (146) for coupling the top gate electrode (144) to a first conductive line (124) over the top FET device (140) and a bottom gate contact via (136) for coupling the via contact portion (134a) of the bottom gate electrode (134) to a second conductive line (128) over the top FET device (140).

The invention is applicable to the field of photovoltaic technology, and provides a back contact solar cell, which comprises a silicon substrate, non-recessed areas and recessed areas are alternately arranged on the backlight surface of the silicon substrate, and the silicon substrate is provided with extending parts extending and protruding to the upper parts of the recessed areas at the edges of the non-recessed areas and the recessed areas; the first dielectric layer and the first polarity doping layer are sequentially stacked on the non-sunken region and the extension part; the second dielectric layer comprises a first part stacked on the first polarity doping layer and a second part stacked in the sunken region; the second polarity doped layer is stacked on the first portion and the second portion. Under the shielding effect of the extension part, the first polarity doping layer in the non-recessed area is effectively isolated from the second polarity doping layer in the recessed area, and electric leakage is avoided.

To provide an onium salt which is used for a chemically amplified resist composition having excellent solvent solubility, high sensitivity, high contrast, and excellent lithographic performances such as exposure latitude and linewidth roughness, in photolithography using high-energy radiation, a chemically amplified resist composition comprising the onium salt as a photoacid generator, and a pattern forming process using the chemically amplified resist composition.SOLUTION: An onium salt having the following formula (1) is provided. [R1-R12 independently represent H, halogen, or a C1-C20 hydrocarbyl group optionally including a heteroatom; one of R13 and R14 represents a substituent having a terminal sulfonic acid anion; the other represents H, halogen, or a C1-C20 hydrocarbyl group optionally including a heteroatom; and Z+ represents an onium cation.]SELECTED DRAWING: None

The present disclosure relates to a film formed with an organometallic precursor and an organic co-reactant, as well as methods for forming and employing such films. In particular embodiments, the films can be incubated after exposure to radiation, which can provide enhanced material differences between the exposed and unexposed regions. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.

The present disclosure relates to the technical field of back contact solar cells, and in particular relates to a combined passivation back contact solar cell having front wide band gap doping, and a preparation method therefor. The solar cell comprises a silicon wafer, and a first semiconductor layer, a second semiconductor layer and a third semiconductor layer arranged on the front face of the silicon wafer. The third semiconductor layer comprises a second tunneling oxide layer and a third doped polycrystalline silicon layer, provided in sequence from inside to outside. The third doped polycrystalline silicon layer is a doped polycrystalline silicon layer containing a first doping element and a second doping element, the first doping element being phosphorus, and the second doping element comprising any one of carbon and oxygen. Furthermore, the band gap width of the third doped polycrystalline silicon layer is ≥1.6eV. The present disclosure, while ensuring a passivation effect, can greatly decrease device investment costs, greatly reduce parasitic absorption of a third semiconductor layer on the front surface of a cell, and increase short-circuit current of the cell, thereby increasing cell conversion efficiency.

The present disclosure relates to the use of a metal chelator to treat an exposed photoresist film. In particular embodiments, the metal chelator is employed to remove an interfacial area that is disposed between exposed and unexposed areas or disposed within an exposed area, thereby enhancing patterning quality.

The invention discloses a self-assembled monomolecular layer hole transport material, a hole transport layer and a battery thereof. According to the present invention, the compound having different anchoring groups and represented by the formula (I) can be subjected to firm self-assembly with the substrate surface through the chemical bonding manner, such that the good coverage rate is provided, the film forming quality is increased, and the transmission performance is improved; and meanwhile, the material has a rigid conjugate large-plane condensed ring core structure, so that the hole transmission performance of the material is ensured, and the photovoltaic performance is favorably improved. When the material is applied to a perovskite solar cell to prepare a hole transport layer, the hole extraction capability can be enhanced, and the open-circuit voltage, the filling factor and the photoelectric conversion efficiency of a device can be improved.

The invention discloses a near-infrared emission aggregation-induced emission organic photo-thermal molecule and a preparation method and application thereof, and belongs to the technical field of biomedicine, and the structure is shown as a formula I: # imgabs0 # (I), wherein R1, R2, R3, R4, R5 and R6 are independently selected from groups containing alkyl chains. The invention also provides a preparation method of the organic photo-thermal molecule and application of the organic photo-thermal molecule in preparation of multifunctional protein nanoparticles with near-infrared aggregation-induced emission. The near-infrared emission aggregation-induced emission organic photo-thermal molecule provided by the invention shows excellent near-infrared imaging effect and photo-thermal capability under laser irradiation, and the obtained near-infrared aggregation-induced emission multifunctional protein nano particle has excellent photo-thermal effect and imaging resolution, has excellent targeting to brain tumor, and has good application prospects in blood brain barrier crossing, brain tumor targeting and brain tumor targeting. And tumor killing, photothermal and ferroptosis combined treatment has practical medical significance, and is expected to be widely applied to the aspects of intelligent drug delivery and nano medical treatment.

The invention discloses long-chain alkyl polyarylamine as well as a preparation method and application thereof. The structural formula of the long-chain alkyl polyarylamine is as shown in a formula (I): # imgabs0 # formula (I), wherein R is an alkyl group with the carbon atom number of 5-12, the weight-average molecular weight of the R is 5000-136000 g / mol, and the PDI of the R is 1.41-2.24; the long-chain alkyl polyarylamine provided by the invention has relatively high fluorescence intensity, can stably emit fluorescence at high temperature and under long-term illumination, and has relatively long fluorescence lifetime.

The invention discloses a back contact solar cell, an assembly and a system. The back contact solar cell comprises a silicon substrate, the back surface of the silicon substrate comprises a plurality of first areas and a plurality of second areas, the first areas and the second areas are arranged at intervals, and each of the first areas and the second areas comprises a passivation selective contact area and a non-passivation selective contact area; the non-passivation selective contact area comprises a passivation anti-reflection layer arranged on the surface of the silicon substrate; the passivation selective contact area of the first area comprises a first passivation layer, a selective transmission layer and a first metal electrode which are sequentially stacked on the surface of the silicon substrate from inside to outside. According to the back contact solar cell, the passivation layer and the selective transmission layer are arranged in the first region and combined with the passivation anti-reflection layer, the excellent passivation contact effect is achieved, a narrow-band-gap highly-doped silicon material does not need to be used, the optical parasitic absorption loss is reduced, the photoelectric conversion efficiency is improved, and then the performance of the back contact solar cell is improved.

The invention discloses light blue low-radiation coated glass for near-zero energy consumption buildings and a preparation method of the light blue low-radiation coated glass, the light blue low-radiation coated glass comprises a glass substrate and a composite metal film layer laminated on the glass substrate, and the light blue low-radiation coated glass is coated glass with three metal silver film layers. According to the invention, one of the multiple composite metal film layers on the common colorless transparent float glass substrate reflects and interferes with light, so that the coated glass is light blue in the sun and has good decoration and energy-saving effects; the hollow glass is high in visible light transmittance, low in outdoor visible light reflectivity, low in solar energy transmittance and high in solar energy reflectivity, and can be made into hollow glass to achieve better energy-saving effects such as light control, heat insulation and the like, so that a building is closer to the nature and is fused with the nature.

The invention provides a solar cell, which comprises a silicon substrate having a backlight surface and a light facing surface which are opposite, the backlight surface comprises first areas and second areas which are alternately arranged, the first areas of the backlight surface are provided with first pyramid structures, the light facing surface is provided with second pyramid structures, the first pyramid structures are provided with first passivation contact layers, and the second pyramid structures are provided with second passivation contact layers; the first pyramid structure is provided with a first passivation contact layer, the reflectivity of the first area is 5%-14%, the second pyramid structure is provided with a passivation antireflection layer, the reflectivity of the light facing face is 5%-14%, the second area is provided with a second passivation contact layer, the reflectivity of the second area is 25%-50%, and the ratio of the area of the first area to the total area of the backlight face is 40%-70%. The light trapping effect of the light-facing surface is further improved by setting different shapes in different areas of the light-facing surface and the backlight surface, and the passivation effect and the carrier transport effect of the surface of the back pyramid structure are balanced while the light trapping effect of the backlight surface is improved; the photoelectric conversion efficiency and the double-sided rate of the solar cell are improved; and the appearance color difference of the receiving surface is improved.

The present disclosure relates to use of aqueous acid for developing or treating a radiation-sensitive film. The aqueous acid can be employed to form a pattern by a positive tone wet development process or to treat a developed pattern by further removing residual resist components.

Dry development of resists can be useful, for example, to form a patterning mask in the context of high-resolution patterning. Dry development may be advantageously accomplished by a method of processing a semiconductor substrate including providing in a process chamber a photopatterned resist on a substrate layer on a semiconductor substrate, and dry developing the photopatterned resist by removing either an exposed portion or an unexposed portion of the resist by a dry development process comprising exposure to a chemical compound to form a resist mask. The resist may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film EUV resist.

The invention discloses a solar cell and a preparation method and application thereof, and relates to the technical field of solar cells. P-type doped regions and N-type doped regions are alternately arranged on the back surface of the crystalline silicon substrate, a boron diffusion doped layer, a first passivation layer and a first antireflection layer are sequentially arranged in the P-type doped regions, and a phosphorus-doped silicon oxide layer, a phosphorus-doped polycrystalline silicon layer, a second passivation layer and a second antireflection layer are sequentially arranged in the N-type doped regions from the surface of the crystalline silicon substrate. A traditional TBC battery P region mostly adopts a two-step process of intrinsic amorphous silicon deposition and boron diffusion to form a polycrystalline silicon layer, but the P region does not contain the polycrystalline silicon layer and can be prepared through a one-step boron diffusion process, so that the process steps can be reduced, and the process time can be shortened; and the action of laser and P-region polycrystalline silicon is avoided, the patterning difficulty of the battery is reduced, and the production yield of the battery can be greatly improved.

The invention provides an organic metal compound and an organic electroluminescent device, the organic metal compound has a structure shown in a general formula I. After the organic metal compound is used as a specific doping material of a luminescent layer and is applied to the organic electroluminescent device, the starting voltage of the device is reduced, the luminous efficiency is improved, and the service life is prolonged.

Described herein are variations of an analyte monitoring system, including an analyte monitoring device. For example, an analyte monitoring device may include a skin-penetrating microneedle array for use in measuring analyte, such as in a continuous manner. The microneedle array may include, for example, at least one microneedle comprising a working electrode comprising an analyte-sensing aptamer that selectively and reversibly binds to analyte. The working electrode comprises at least one thiol-based passivation molecule that provides protection of the working electrode from, by way of example, foulants and interferents. For example, a sensor may be configured to generate a signal that is indicative of a concentration of an analyte in a fluid, the sensor comprising a working electrode comprising an electrode material, a biorecognition layer disposed at least partially on the electrode material and comprising a biorecognition element that selectively and reversibly binds to an analyte, and an at least partially desiccated hydrogel disposed on the biorecognition layer. For example, a working electrode may be configured to generate a signal indicative of a concentration of an analyte in a fluid, the working electrode comprising an electrode material, a biorecognition element disposed on the electrode material that selectively binds to the analyte, wherein the biorecognition element is functionalized with a redox-active molecule and is configured to change conformation upon binding the analyte to move the redox-active molecule, closer to, or further from, the electrode material, and a passivation element comprising a zwitterionic peptide disposed on the electrode material.

To provide: a transistor with favorable electrical characteristics; a transistor with a high on-state current; a transistor with low parasitic capacitance; or a transistor, a semiconductor device, or a memory device which can be miniaturized or highly integrated.SOLUTION: There is provided a transistor including an oxide semiconductor layer, a semiconductor device, or a memory device. The oxide semiconductor layer includes a first region, a second region over the first region, and a third region over the second region. The first region is located in a range from a surface on which the oxide semiconductor layer is to be formed to greater than or equal to 0 nm to less than or equal to 3 nm in a direction substantially perpendicular to the surface. In cross-sectional observation of the oxide semiconductor layer using a transmission electron microscope, bright spots arranged in a layered manner in a direction parallel to the surface on which the oxide semiconductor layer is to be formed are observed in each of the first region, the second region, and the third region.SELECTED DRAWING: Figure 1

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Provided is an irradiation device that is capable of effectively suppressing activities of insect pests. An irradiation device (100) includes: a detection section (31) that detects an insect which is an irradiation target; an identification section (32) that identifies position information of the irradiation target; and an irradiation section (1) that, based on the position information, irradiates the irradiation target with shooting laser light (L2) while targeting a specific part of the irradiation target.

The invention discloses an up-conversion nanoprobe for detecting tyrosinase through dual-signal output and application of the up-conversion nanoprobe, and relates to the technical field of nano biological materials, the up-conversion nanoprobe comprises UCNPs, tyramine and iron ions; the UCNPs has a core-shell structure, beta-NaYF4: Yb, Er is taken as a core, and NaYF4 is taken as a shell; according to the up-conversion nanoprobe disclosed by the invention, by integrating the advantages of a fluorescence determination method and a colorimetric method, the dual-signal self-calibration capability is formed; according to the method, the UCL signal excited by near-infrared light is utilized, the detection precision is greatly improved, and an intuitive and convenient method is provided for detection of tyrosinase through colorimetric reaction; and a dual-signal output detection mode effectively relieves signal fluctuation, so that the accuracy and reliability of tyrosinase analysis are ensured.

The invention discloses an irradiation-reinforced SiC super-junction MOS (Metal Oxide Semiconductor) structure and a preparation process thereof, and belongs to the technical field of MOS semiconductors. Comprising a drain electrode, a semiconductor epitaxial layer, a source electrode and a grid electrode; the semiconductor epitaxial layer comprises an N substrate layer, an N drift layer, a P + layer, an N well layer and a P well layer; by arranging the lightly doped N layer in the middle of the N drift layer and arranging the laterally symmetrical trapezoidal P-layers on the two sides of the N drift layer, the device can interact with electrons in the N drift layer, accelerate carrier recombination, reduce the influence of redundant carriers on the performance of the device, effectively reduce the performance degradation caused by irradiation, and improve the performance of the device. According to the invention, the concave heavily-doped N layer is formed at the bottom end of the lightly-doped N layer, so that the carrier concentration of the region can be greatly improved, and the conductivity is remarkably enhanced.

The invention discloses a double-boron polycyclic compound for an organic electroluminescent device, and belongs to the technical field of organic electroluminescent materials. The double-boron polycyclic compound takes a spiro derivative as a center B atom to be directly bonded with N, O, S and Se, has relatively high singlet and triplet energy, proper HOMO and LUMO energy levels and relatively small singlet-triplet energy difference, and can be used as a luminescent material to be applied to an organic electroluminescent device to improve the luminous efficiency of the device and improve the color purity of the device. After the double-boron polycyclic compound is applied to an OLED as a luminescent material, the relative value of external quantum efficiency of a luminescent device is 105.6%-126.9%, the half-peak width is 22-29 nm, and compared with an OLED using BD01 as the luminescent material, the luminescent efficiency is obviously improved, the half-peak width of an emission spectrum is narrower, and the color purity is higher. The invention provides an MR-TADF material for improving the color purity of a blue light device.

The invention discloses a method for preparing low-radiation coated toughened glass, which comprises the following steps: sintering a target material, carrying out moisture removal and degassing pretreatment on glass, carrying out coating treatment and toughening treatment, and laminating a composite metal film layer on a toughened glass substrate to prepare light blue toughened coated glass with three metal silver film layers. According to the method, after a common glass substrate is plated with the composite metal film layers, toughening treatment is carried out, and after toughening treatment, the metal film layers reflect, interfere and refract light, so that the glass is light blue in the sun, and the decoration and energy-saving effects are good; the visible light transmittance is high, the outdoor visible light reflectivity is low, the solar energy transmittance is low, and the solar energy reflectivity is high; and the prepared hollow glass has better energy-saving effects such as light control, heat insulation and the like, so that a building is closer to nature.

The invention discloses a reversible background-free hydrogel nanosensor for acetone detection and an intelligent sensing platform, and relates to the technical field of biosensors. The hydrogel nanosensor consists of a hydrogel matrix and an upconversion nanoprobe, and the upconversion nanoprobe comprises upconversion nanoparticles (UCNPs), hydroxylamine sulfate and thymol blue (TB). The invention adopts hydroxylamine sulfate as a specific recognition unit of acetone to construct a reversible luminescent hydrogel probe for acetone detection, and the probe can be reused in multiple detections, thereby reducing the cost of a single detection. In addition, by adopting near-infrared light as an excitation light source, the autofluorescence interference of the hydrogel matrix is ​​effectively avoided, thereby improving the detection accuracy.

Provided are a solar cell, a method for preparing a solar cell, and a photovoltaic module, relating to the field of photovoltaics. The solar cell includes a substrate, a dielectric layer and a doped semiconductor layer which are stacked, a passivation layer, and electrodes. The substrate has a first surface. The first surface includes an edge region and a center region. The edge region surrounds the center region. The edge region is substantially flush with or closer to the second surface than the center region. The dielectric layer is formed over the center region. The passivation layer covers the edge region and a surface of the doped semiconductor layer facing away the dielectric layer. The electrodes are located in the center region, and penetrate the passivation layer in a thickness direction to be in electrical contact with the doped semiconductor layer.

The invention provides a solar cell, a manufacturing method thereof and a photovoltaic module, and relates to the photovoltaic field. The solar cell comprises a substrate which comprises a first surface and a second surface which are opposite to each other, the first surface is provided with a groove, microstructures are arranged on the first surface of the periphery of the groove, the bottom surface of the groove and the side face of the groove respectively, and the multiple microstructures comprise a first conical structure, a second conical structure and a columnar structure, the height direction of the first conical structure intersects with the height direction of the second conical structure, and the side face of the columnar structure inclines towards the peripheral direction of the groove. The first passivation layer is located on the first surface. The problem that in the prior art, a solar cell is low in sunlight absorption rate is at least solved.

A light emitting device may include: a substrate; a light emitting element located on the substrate and configured to emit light; a first electrode and a second electrode spaced from each other with the light emitting element interposed therebetween; a color conversion layer located on the substrate and configured to convert light emitted from the light emitting element into light having a specific color; a first contact electrode configured to electrically couple the first electrode with a first end of the light emitting element; and a second contact electrode configured to electrically couple the second electrode with a second end of the light emitting element. In a plan view, the color conversion layer may be spaced from the light emitting element and overlaps with at least one of the first and the second contact electrodes.

A back-contact cell and a manufacturing method therefor, and a photovoltaic module, which belong to the technical field of photovoltaics. The back-contact cell comprises: a semiconductor substrate, which has a first surface and a second surface, which are arranged opposite each other, wherein the first surface is of a textured structure; and a tunneling passivation layer and an N-type doped polycrystalline silicon layer, which are sequentially stacked in a local region of the second surface in the thickness direction of the semiconductor substrate, wherein the ratio of the thickness of the part of the N-type doped polycrystalline silicon layer that is located in an edge region of the second surface to the thickness of the part of the N-type doped polycrystalline silicon layer that is located in the central region of the second surface is greater than or equal to 1 and is less than or equal to 1.2.