32866 results about "Photochemistry" patented technology

The present disclosure relates to the use of a metal chelator to treat an exposed photoresist film. In particular embodiments, the metal chelator is employed to remove an interfacial area that is disposed between exposed and unexposed areas or disposed within an exposed area, thereby enhancing patterning quality.

The invention discloses long-chain alkyl polyarylamine as well as a preparation method and application thereof. The structural formula of the long-chain alkyl polyarylamine is as shown in a formula (I): # imgabs0 # formula (I), wherein R is an alkyl group with the carbon atom number of 5-12, the weight-average molecular weight of the R is 5000-136000 g / mol, and the PDI of the R is 1.41-2.24; the long-chain alkyl polyarylamine provided by the invention has relatively high fluorescence intensity, can stably emit fluorescence at high temperature and under long-term illumination, and has relatively long fluorescence lifetime.

The invention provides a solar cell, which comprises a silicon substrate having a backlight surface and a light facing surface which are opposite, the backlight surface comprises first areas and second areas which are alternately arranged, the first areas of the backlight surface are provided with first pyramid structures, the light facing surface is provided with second pyramid structures, the first pyramid structures are provided with first passivation contact layers, and the second pyramid structures are provided with second passivation contact layers; the first pyramid structure is provided with a first passivation contact layer, the reflectivity of the first area is 5%-14%, the second pyramid structure is provided with a passivation antireflection layer, the reflectivity of the light facing face is 5%-14%, the second area is provided with a second passivation contact layer, the reflectivity of the second area is 25%-50%, and the ratio of the area of the first area to the total area of the backlight face is 40%-70%. The light trapping effect of the light-facing surface is further improved by setting different shapes in different areas of the light-facing surface and the backlight surface, and the passivation effect and the carrier transport effect of the surface of the back pyramid structure are balanced while the light trapping effect of the backlight surface is improved; the photoelectric conversion efficiency and the double-sided rate of the solar cell are improved; and the appearance color difference of the receiving surface is improved.

The invention discloses an irradiation-reinforced SiC super-junction MOS (Metal Oxide Semiconductor) structure and a preparation process thereof, and belongs to the technical field of MOS semiconductors. Comprising a drain electrode, a semiconductor epitaxial layer, a source electrode and a grid electrode; the semiconductor epitaxial layer comprises an N substrate layer, an N drift layer, a P + layer, an N well layer and a P well layer; by arranging the lightly doped N layer in the middle of the N drift layer and arranging the laterally symmetrical trapezoidal P-layers on the two sides of the N drift layer, the device can interact with electrons in the N drift layer, accelerate carrier recombination, reduce the influence of redundant carriers on the performance of the device, effectively reduce the performance degradation caused by irradiation, and improve the performance of the device. According to the invention, the concave heavily-doped N layer is formed at the bottom end of the lightly-doped N layer, so that the carrier concentration of the region can be greatly improved, and the conductivity is remarkably enhanced.

Monoorgano tin trialkoxide compounds having chemical formula R'SnX3 and containing less than about 5 mol% R'2SnX2are described. R' is an optionally substituted organic substituent having about 1 to about 20 carbon atoms and each X is independently ORf, wherein Rf is a fluorinated organic substituent having about 1 to about 20 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.

The present application relates to a solar cell, a method for manufacturing the same, a photovoltaic module and a photovoltaic system. The solar cell includes: a substrate (110), including a first surface (S1) and a second surface (S2) being opposite to each other, wherein the first surface (S1) has a first region (A) and a second region (B) adjacent to each other in a first direction; a passivating contact layer (120), located in the first region (A) of the first surface (S1); a polysilicon layer (130) located on at least a part of a surface of the passivating contact layer (120) away from the substrate (110); the passivating contact layer (120) including a first tunneling layer (121) and a first doped layer (122), the first tunneling layer (121) and the first doped layer (122) being sequentially stacked on the first region (A) of the first surface (S1) of the substrate (110) in a direction away from the second surface (S2); and a first passivation layer (140), located on a surface of the polysilicon layer (130) away from the passivating contact layer (120) and on the second region (B) of the first surface (S1).

The invention discloses an SERS (Surface Enhanced Raman Scattering) sensing chip with stable reusability as well as a preparation method and application of the SERS sensing chip, and belongs to the technical field of photoelectric sensing devices. Comprising a substrate; the semiconductor photocatalyst is positioned on the surface of the substrate; the co-oxidant and the co-reducing agent are positioned on the surface of the semiconductor photocatalyst; the occupying molecule is covalently connected with an exposure site of the auxiliary reducing agent in space; the template molecule is in covalent linkage or coordination linkage with an exposure site of the pro-oxidant in space; wherein the template molecule can be subjected to photocatalytic degradation, so that the pro-oxidant obtains the exposure site again. The template molecules in the sensing chip can be quickly removed through space confinement photocatalytic degradation, and the accuracy of quantitative analysis is improved by using the inorganic imprinted polymer as internal standard molecules.

Provided is a back-contact solar cell. The back-contact solar cell includes: a substrate having first doped regions, second doped regions and gap regions arranged on the substrate; first doped semiconductor layers located on the corresponding first doped regions; second doped semiconductor layers located on the corresponding second doped regions, a conductive type of a second doping element within the second doped semiconductor layer is different from that of a first doping element within the first doped semiconductor layer; a conductive layer located on part of the gap region; a passivation layer covering the first doped semiconductor layers, the second doped semiconductor layers, the conductive layers and the gap regions; first electrodes in electrical contact with the first doped semiconductor layers; and second electrodes, in electrical contact with the second doped semiconductor layers.

A light absorber 10 has a transmission spectrum satisfying the following requirements (I), (II), (III), (IV), and (V) at an incident angle of 0°. The light absorber 10 has a haze less than 0.20%. (I) An average transmittance TA0deg(460-600) is 75% or more. (II) A shorter cut-off wavelength λH0deg(s) is in a range of 390 nm to 450 nm. (III) A longer cut-off wavelength λH0deg(L) is in a range of 600 nm to 680 nm. (IV) An average TA0deg(300-380) is 1.2% or less. (V) An average TA0deg(750-1000) is 1.2% or less.

The invention relates to a back contact solar cell and a preparation method thereof, the back contact solar cell comprises a front surface and a back surface which are oppositely arranged on a semiconductor substrate, and the back surface comprises a first conductive region, a second conductive region and an isolation structure unit, the first conductive regions and the second conductive regions are opposite in conductive type and are alternately arranged in the first direction of the semiconductor substrate, the isolation structure units are located between the first conductive regions and the second conductive regions, and the length of the isolation structure units in the first direction ranges from 20.0 micrometers to 200.0 micrometers. Each isolation structure unit comprises a first isolation region, a second isolation region, a third isolation region, a fourth isolation region and a fifth isolation region which are different in isolation region morphology. According to the isolation structure unit provided by the invention, the good insulation effect is realized, the collection efficiency of current carriers is improved, the passivation performance of the isolation region is improved, meanwhile, the damage to the battery caused by laser grooving can be reduced, and the photoelectric conversion efficiency of the back contact battery is improved.

The invention discloses a solar cell and a photovoltaic module, and relates to the field of photovoltaic technology. The solar cell includes: a semiconductor substrate having a first semiconductor layer on a first surface; the passivation layer at least covers one side, deviating from the semiconductor substrate, of the first semiconductor layer; the seed layer penetrates through the passivation layer and is conductively connected with the first semiconductor layer; at least part of the first grid line is arranged on the side, away from the semiconductor substrate, of the seed layer, and the first grid line is formed by base metal slurry. The height of the seed layer is h1, the height of the first grid line is h2, and 0.08 < = h1 / h2 < = 0.8. Compared with the prior art in which the silver paste burns through the passivation layer to integrally form the silver electrode, the amount of the silver paste required for manufacturing the whole electrode structure of the solar cell can be reduced, and the manufacturing cost of the whole electrode structure is reduced.

The invention provides a boron-nitrogen heterocyclic compound as well as an intermediate and a preparation method thereof, the boron-nitrogen heterocyclic compound has a structure as shown in a general formula (1), and is prepared by taking compounds as shown in a formula A, a formula B and a formula C as intermediates. Compared with similar carbon skeleton molecules, the boron-nitrogen heterocyclic compound provided by the invention shows an excellent narrow-band luminescence property. The half-peak width of the emission spectrum of the boron-aza compound is as low as 6.4 nm, and meanwhile, the fluorescence quantum yield is as high as 97%.

The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a preparation method thereof. The preparation method comprises the steps that a substrate is provided, the substrate comprises an SGT device region and a BCD device region which are transversely arranged, and the conduction types of the SGT device region and the BCD device region are different; forming a plurality of deep grooves in the SGT device region and the BCD device region; gate material filling is carried out on the multiple deep grooves, a first voltage-withstanding gate structure and at least one gate filling structure of the SGT device area and a second voltage-withstanding gate structure of the BCD device area are formed, and the first voltage-withstanding gate structure is close to the BCD device area; forming a shield gate structure based on the at least one gate filling structure; and forming a plurality of shallow trench isolation structures arranged at intervals in the BCD device region, wherein the shallow trench isolation structures are located between the first voltage-withstanding gate structure and the second voltage-withstanding gate structure. According to the invention, the process cost of SGT and BCD device integration can be reduced, and the device connection is simplified.

The invention provides a SiO2 / TiO2 / PMMA radiation refrigeration film and a preparation method thereof, and relates to the technical field of passive daytime radiation refrigeration films. The radiation refrigeration film is prepared from the following raw materials: N, N-dimethylformamide, polymethyl methacrylate, silicon dioxide and titanium dioxide. The invention relates to a preparation method of a SiO2 / TiO2 / PMMA radiation refrigeration film. The preparation method comprises the steps of preparing silicon dioxide, preparing titanium dioxide, synthesizing composite sol and preparing the SiO2 / TiO2 / PMMA radiation refrigeration film. The SiO2 / TiO2 / PMMA radiation refrigeration film prepared by the invention has high reflectivity in the ultraviolet-visible-near infrared band and high emissivity in the infrared band, can realize 8.4 DEG C sub-environment refrigeration, and is low in cost and simple in process flow.

An organic light-emitting device comprises an anode, a cathode and an organic layer formed between the anode and the cathode, and the organic layer comprises a hole injection layer, a hole transmission area, an electron blocking layer, a light-emitting area and an electron transmission area. The hole transport region comprises a first material and a second material, the first material and the second material are sequentially evaporated to form two hole transport layers, and the first material is selected from a compound shown in the formula 1; and the second material is selected from a compound shown in a formula 2. According to the invention, the first material with a high refractive index is used as the first hole transport layer, the second material with a low refractive index is used as the second hole transport layer, and the structures of the first material and the second material are respectively limited at the same time. The invention overcomes the limitation of a single material or a simple mixed material in the aspects of hole transport and luminous efficiency. .

The invention discloses a lithium supplement additive and a preparation method and application thereof. The lithium supplement additive comprises a lithium sulfinate compound, and the lithium sulfinate compound contains an electron withdrawing group. An electron withdrawing group contained in the lithium sulfinate compound in the lithium supplement additive can effectively change electron cloud distribution around sulfur atoms, so that the lithium sulfinate compound is endowed with relatively high lithium supplement capacity; meanwhile, due to the existence of the electron withdrawing group, the electron energy of the lowest unoccupied molecular orbital (LUMO) of the lithium sulfinate compound is reduced, and the energy gap between the highest occupied molecular orbital (HOMO) and the LUMO of the lithium sulfinate compound is reduced, so that the lithium supplement additive can be arranged in an electrode plate to exert the lithium supplement capacity and also can be used as an electrolyte additive; and the material can participate in electrode / electrolyte interface formation.

The invention provides a solar cell and a photovoltaic module, and belongs to the technical field of solar cells. The solar cell comprises a silicon substrate comprising a first surface and a second surface which are opposite to each other; the first surface of the silicon substrate comprises a plurality of conductive regions which are arranged at intervals, the doped conductive layers are arranged on the conductive regions respectively, and a groove which is concave towards the interior of the silicon substrate is formed between every two adjacent conductive regions; wherein the groove comprises two opposite side faces and a bottom face located between the two side faces, and at least part of the side faces are provided with a plurality of sheet-shaped structures. The light absorption capability of the solar cell and the photoelectric conversion efficiency of the solar cell are effectively improved, and the effective generating capacity of the solar cell in the life cycle can be improved.

The invention belongs to the technical field of OLEDs, and provides a polycyclic compound containing triphenyl silicon and a polyalkyl substituent group and an organic electroluminescent device containing the polycyclic compound. The structural general formula of the polycyclic compound is as shown in formula I in the specification. Benzofuran with higher electronegativity is introduced to a ring structure composed of nitrogen atoms and boron atoms, triphenyl silicon is introduced to the para-position of boron, and the synergistic effect of benzofuran and triphenyl silicon can significantly enhance the multiple resonance of a light-emitting core and reduce vibration relaxation. Due to simultaneous use of the benzofuran and the triphenyl silicon, the problems of vibration relaxation increase, spectrum widening and the like caused by introduction of the polyalkyl substituent are remarkably improved, the luminous efficiency of the material is remarkably improved, and the color purity is improved, so that the requirement of BT.2020 wide color gamut display standard on a luminescent spectrum is met. I

The invention provides a self-repairing EVA adhesive film and a preparation method thereof, and relates to the technical field of solar photovoltaic module packaging. According to the self-repairable EVA adhesive film disclosed by the invention, through Diels-Alder reactive group grafting and silane coupling agent microencapsulation technologies, a dual self-repairing mechanism of a photovoltaic module packaging adhesive film is realized, and the dual self-repairing mechanism comprises physical rearrangement repairing and chemical bonding repairing; while high light transmittance (more than or equal to 90%) and bonding strength (more than or equal to 96 N / cm) are maintained, the aging resistance (delta YI is less than or equal to 3) of the EVA adhesive film is remarkably improved, the service life of the EVA adhesive film is remarkably prolonged, and the problems that a traditional EVA adhesive film is easy to age in an extreme environment and is easy to suffer from micro damage caused by mechanical stress are solved; the preparation process disclosed by the invention is compatible with the existing production line, and has a relatively high industrial application value.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a capping mask layer positioned on the substrate; a first gate insulating layer positioned along the capping mask layer, inwardly positioned in the substrate, and including a U-shaped cross-sectional profile; a first work function layer positioned on the first gate insulating layer; a first conductive layer positioned on the first work function layer; and a first capping layer positioned on the first conductive layer. The first capping layer includes germanium oxide. A top surface of the first capping layer and a top surface of the capping mask layer are substantially coplanar.

The invention discloses a back contact cell and a preparation method thereof, a laminated cell and a photovoltaic module, and belongs to the technical field of photovoltaics, the back contact cell comprises a substrate, the substrate comprises a first region, a second region and a spacer region located between the first region and the second region, and a tunneling oxide layer and a doped polycrystalline silicon layer are arranged in the first region and the spacer region. The doped polycrystalline silicon layer is arranged on the surface, deviating from the substrate in the thickness direction, of the tunneling oxide layer, the amorphous silicon passivation layer and the doped amorphous silicon layer are arranged in the second region and the spacer region, and the doped amorphous silicon layer is arranged on the surface, deviating from the substrate in the thickness direction, of the amorphous silicon passivation layer. And the amorphous silicon passivation layer in the spacer region is positioned on one side, deviating from the substrate along the thickness direction, of the doped polycrystalline silicon layer. The insulating layer is arranged between the amorphous silicon passivation layer and the doped polycrystalline silicon layer, the insulating layer comprises a first insulating part which extends in the thickness direction and is arranged at the junction position of the second region and the spacer region, the first insulating part can prevent the back contact cell from leaking electricity in the horizontal direction, and the overall electrical performance of the back contact cell is improved.

A semiconductor nanoparticle, a production method, and an electroluminescent device including the same. The semiconductor nanoparticle includes zinc, sulfur, and selenium, and the semiconductor nanoparticle comprises a first semiconductor nanocrystal; and a semiconductor nanocrystal shell including zinc and sulfur disposed on the first semiconductor nanocrystal, and the semiconductor nanoparticle does not include cadmium; the semiconductor nanoparticle further includes a plurality of organic ligands (or a ligand system), that include a first organic ligand having a carboxylate moiety and a second organic ligand having a carboxylate moiety different from the first organic ligand. In a gas chromatography analysis, the semiconductor nanoparticle exhibits a first peak assigned to the first organic ligand and a second peak assigned to the second organic ligand, wherein an area percentage of the first peak relative to the second peak is greater than or equal to about 1% and less than or equal to about 300%.

The invention discloses a metal-doped carbon quantum dot as well as preparation and application of the metal-doped carbon quantum dot in a nano antibacterial agent, citric acid, urea and tea polyphenol are taken as precursors, metal salt is added, carbon dot synthesis and metal ion doping are synchronously completed in one step through a hydrothermal method, and the metal-doped carbon quantum dot is prepared; the surfaces of the metal-doped carbon quantum dots are negatively charged, and the metal-doped carbon quantum dots have peroxidase-like activity and catalase-like activity at the same time; the metal ions adopt any one of Fe < 3 + >, Cu < 2 + > and Ce < 3 + >; the metal-doped carbon quantum dots are in a sphere-like shape. The metal-doped carbon quantum dots prepared by the preparation method disclosed by the invention have peroxidase-like activity and catalase-like activity at the same time through precise doping of metal ions, and the two activities have a synergistic effect in an oral periodontitis microenvironment, so that a good antibacterial effect is achieved.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to an electron transport material, an OLED with the electron transport material and an organic light-emitting device with the electron transport material. According to the electron transport material disclosed by the invention, triazinyl is taken as a framework, phenyl and cyano-substituted biphenyl is taken as a specific substituent group, methyl, adamantyl, phenyl and pyridyl are limited to be matched, and the electron transport material is used as a material for forming an electron transport layer to manufacture an organic electroluminescent device, so that the evaporation process of the device can be smoothly carried out; and the light-emitting efficiency of the organic light-emitting device is effectively improved, and the application prospect is very good.

The invention discloses an MOF-CQD enzyme-sensitive FRET hydrogel diagnosis and treatment probe as well as a preparation method and application thereof, and belongs to the technical field of biomedical detection and treatment. The probe takes a carboxyl carbon quantum dot (CQD) as a donor and a metal organic framework (MOF) as an acceptor, and the donor and the acceptor are connected through a replaceable enzyme response polypeptide bridge; when the fluorescence is complete, FRET is generated to quench the CQD fluorescence, the FRET is interrupted after the target enzyme cuts off the peptide bridge, and the blue / red fluorescence ratio is changed to realize nanomole-level quantitative detection and has self-correction capability. The probe is packaged in a four-arm PEG transparent hydrogel which does not need a photoinitiator and can be quickly self-crosslinked, and can be prepared into a film, a tooth socket and the like for POCT (point-of-care testing) of parts such as an oral cavity / skin and the like. After detection, the MOF is activated by illumination of 630-660 nm to generate active singlet oxygen, so that local antibacterial or anti-tumor treatment is realized, and a diagnosis and treatment integrated scheme is constructed.

A compound of Chemical Formula 1 and an organic light emitting device including the same are provided. The compound is used as a material of an organic material layer of the organic light emitting device, and provides high color purity, high efficiency and enhanced lifetime properties.

A photobase generator includes a compound including: first skeletons represented by the following formula (a); and a second skeleton including nitrogen atoms bonding to bonding positions of the first skeletons to form amide groups, wherein, in a molecule, a number of the first skeletons is two or more, a number of the nitrogen atoms, configuring the amide groups, in the second skeleton is the same as the number of the first skeletons, and at least one of the nitrogen atoms configuring the amide groups is converted into a nitrogen atom configuring a secondary amine or a tertiary amine by light irradiation. In the formula (a), G is a divalent aromatic group, and * represents the bonding position with the nitrogen atom.

A method of depositing at least one fluoride layer comprises: depositing the fluoride layer on a substrate by photoassisted atomic layer deposition, ALD, in a plurality of ALD cycles. The method comprises irradiating the fluoride layer with UV / VIS light at least in some of the plurality of ALD cycles, such as in all ALD cycles, to anneal at least one potential crystal defect in the fluoride layer. The methods can be performed using an apparatus for atomic layer deposition of at least one fluoride layer, thereby producing an optical element comprising a substrate coated with such a fluoride layer, which can be used in an optical arrangement comprising at least one such optical element.

The present application discloses a photovoltaic module, and a solar cell and a preparation method therefor. The solar cell comprises: a substrate, wherein the substrate has a first surface and a second surface which are oppositely arranged; a first doped region, located in the substrate and extending from the first surface into the substrate; a second doped region, comprising a tunneling layer and a second silicon-containing doped layer which are sequentially stacked on the first surface, wherein one side surface of the tunneling layer is stacked on the first surface of the substrate. The first doped region and the second doped region are alternately arranged, the conductive type of the second doped region and the conductive type of the first doped region are opposite, and a gap is present between the first doped region and the second doped region. The first doped region contains boron as a doping element.

The invention discloses a novel photocatalyst for producing hydrogen from organic matter wastewater and a preparation method of the novel photocatalyst, and relates to the technical field of photocatalysis. The photocatalyst disclosed by the invention is combined with oxidation-reduction capability, and can effectively degrade and produce hydrogen under the irradiation of sunlight. Through combination of quaternized porous tungsten oxide and vanadate radicals, silver vanadate load growth is promoted, the sunlight utilization rate is increased, and the electron-hole recombination rate is reduced. Reduced graphene oxide is used for pretreatment, active groups are introduced, the reduced graphene oxide is compounded with tungsten oxide / silver vanadate, the binding force is enhanced through heat treatment, photo-induced electron-hole pair compounding is inhibited through the conductivity, and the visible light catalytic performance is improved. The adsorption effect of porous tungsten trioxide and reduced graphene oxide can accelerate the degradation of organic matters. By optimizing the proportion of silver vanadate, tungsten oxide and reduced graphene oxide, the visible light response and charge separation efficiency are enhanced, the degradation and hydrogen production performance is improved, and light corrosion is reduced.