293results about How to "Enhanced glow" patented technology

A nitride semiconductor light emitting element is provided with: a substrate 11 having a pair of main surfaces that face each other; a nitride semiconductor layer of a first conductivity type layered on one of the main surfaces of substrate 11; a nitride semiconductor layer of a second conductivity type layered on the nitride semiconductor layer of the first conductivity type; an active layer 14 formed between the nitride semiconductor layer of the first conductivity type and the nitride semiconductor layer of the second conductivity type; and a reflective layer 16 formed on the nitride semiconductor layer of the second conductivity type for reflecting light from active layer 14 toward the nitride semiconductor layer of the second conductivity type. This nitride semiconductor light emitting element can be mounted on a circuit board, with the other main surface of the above described substrate 11 being used as the main light emitting surface. Furthermore, a translucent conductive layer 17 is formed between reflective layer 16 and the nitride semiconductor layer of the second conductivity type, and an uneven interface 22 is formed as the interface between translucent conductive layer 17 and reflective layer 16.

A light emitting apparatus includes a substrate, at least one light emitting device and a protective layer. The substrate has a surface formed with a structure for increasing light emitting efficiency. The light emitting device is disposed on a predetermined position of the substrate. The light emitting device emits lights and the lights are reflected and concentrated to project out by the structure of the substrate. Thus, the light emitting efficiency is improved.

To facilitate electrode connections and achieve a high light emitting efficiency, a rod-like light-emitting device includes a semiconductor core of a first conductivity type having a rod shape, and a semiconductor layer of a second conductivity type formed to cover the semiconductor core. The outer peripheral surface of part of the semiconductor core is exposed.

The present invention discloses a high CRI white LED and a lamp comprising the white LED. The white LED includes a base, a reflector for mixing light, protrusions on the inner wall surface of the reflector, at least 6 LED chips emitting lights at different wavelengths, which are fixed and electrically combined on the heat conducting base, and a lead frame which has a shape and a size matched well with the bottom of the reflector and which is fixed outside the reflector and on the top surface of the base. Electrodes of the LED chips are electrically connected with leads on the lead frame. A transparent optical material covers the chips. The multi-wavelengths lights are mixed uniformly by diffuse reflection of the reflecting walls of the reflector to achieve a white LED with high CRI and high efficiency. A white LED lamp or a white LED plane light source comprising the white LED can avoid energy loss in optical conversion in which phosphors are used. With the configuration, the efficiency in electro-to-optic conversion and working lifetime of the lamps are improved. The lamp is also suitable for mass production.

A light emitting apparatus having a large quantity of light per space necessary for installation, which allows easy adjustment of the directivity of light emission and easy arrangement of the color of emitted light and has a high light emitting efficiency, is achieved by a light emitting apparatus, which is comprised of a moisture impermeable substrate having a warped configuration, an electro-luminescent light emitting laminated body formed on the inner surface of the warped substrate having such constitution that, from the warped substrate side, at least a first electrode layer, a light emitting function layer and a second electrode layer being laminated in this order, a moisture impermeable opposing substrate joined in an impermeable manner at the edge portion or in a region adjacent to the edge portion of the warped substrate and electrical connection terminals connected to each of the electrode layers of the electro-luminescent light emitting laminated body for externally supplying electrical energy to each electrode layer.

A compound is represented by the following formula (I):

wherein each of Ar₁ and Ar₂ independently represents an aromatic ring or an aromatic heterocyclic ring; each of R₁, R₂, R₃ and R₄ independently represents a hydrogen atom or a substituent; each of Z₁ and Z₂ independently represents a carbon atom or a nitrogen atom; each of ring Q₁ containing a carbon atom and Z₁, and ring Q₂ containing a carbon atom and Z₂ independently represents an aromatic ring or an aromatic heterocyclic ring; and A₁ represents a single bond or a divalent linking group.

A method of manufacturing a nitride semiconductor light emitting element includes: forming a stacked layer body of a nitride semiconductor having a second conductive-type layer, a light emitting layer, and a first conductive-type layer stacked on a growth substrate in this order; forming a first Bragg reflector made of a dielectric multilayer film above the first conductive-type layer; forming a first electrode over the first Bragg reflector with the first electrode being electrically connected to the first conductive-type layer; bonding the stacked layer body to a supporting substrate via the first Bragg reflector and the first electrode; removing the growth substrate from the stacked layer body to expose the second conductive-type layer; and forming over the exposed second conductive-type layer a second electrode and a second Bragg reflector made of a dielectric multilayer film so that the second Bragg reflector faces the first Bragg reflector across the stacked layer body.

The present invention provides a light emitting device comprising: an excitation light source which radiates excitation light; a wavelength converting member which absorbs and converts the wavelength of at least part of the excitation light radiated from the excitation light source, and releases light with a predetermined wavelength band; a light guide for guiding the excitation light radiated from the excitation light source to the wavelength converting member, with one end at the excitation light source and the other end at the wavelength converting member, wherein the refractive index of the cross-sectional center region (core) is higher than that of the circumferential region (clad); and a thermally conductive transparent film which contacts with the wavelength converting member.

A clear, frosted, or colored, transparent and/or translucent, plastic, or composite skateboard, snowboard, or any sports board material, that is illuminated with replaceable, rechargeable, or self-charging battery powered light emitting diodes which are placed inside the board within an inexpensive, drop-in, modular housing, which serves as a light engine and provides light that is transmitted through the interior of the board itself in order to illuminate light altering elements which are embedded inside the board and/or etched, printed or applied to the surface of the board. This glowing light creates unique artistic light patterns, flashing sequences, and glowing designs throughout the interior and exterior of the board.

The invention discloses a luminescent centre regionally doped rare earth upconversion luminescent material and a preparation method thereof, which relates to the technical field of structural design and preparation of luminescent materials. For solving the problems of small doping amount in the luminescent center and low luminescent efficiency of the rare earth upconversion luminescent material, the conventional materials of the same kind take NaYF4 as a matrix, are doped with rare earth sensitized ions and rare earth luminescent ions and has a core/shell structure and nanocrystalline micro structure, wherein a luminescent shell layer is coated outside the core/shell structure, and a sensitized layer is the outmost layer. The preparation method of the rare earth upconversion luminescent material comprises: after a trifluoroacetate thermal decomposition method is implemented, adding a luminescent shell layer precursor into solution of nanoparticle colloid with the luminescent core/shell structure, heating, and reacting to form the luminescent shell layer; cooling the product obtained by the previous step, adding a sensitized shell precursor layer, heating, reacting and obtaining a sensitized shell layer on the outside of the luminescent shell layer; and thus, obtaining the luminescent centre regionally doped rare earth upconversion luminescent material.

A main object of the present invention is to provide: fine particles whose excitation light is not the one such as UV light or the like which has negative effects on a subject to be analyzed, emit light stably, and has excellent light emitting efficiency, and a fluorescent probe labeled with the fine particles. In order to achieve the aforementioned object, the present invention provides a fluorescent probe comprising: fine particles containing a rare earth element characterized in that they are excited by light having a wavelength in a range of 500 nm to 2000 nm and thereby emit up-conversion emission; and a specific binding substance which binds to the fine particles containing a rare earth element.

A semiconductor substrate including a gallium arsenide layer is obtained by executing a step of preparing a first substrate having a separating layer constituted of germanium and a gallium arsenide layer on the separating layer, a step of preparing a bonded substrate by bonding the first substrate and a second substrate, and a step of dividing the bonded substrate at a portion of the separating layer.

A semiconductor light-emitting diode includes an electrically conductive substrate transmissive to light-emitting wavelengths, and semiconductor layers including a light-emitting layer, on the substrate. A principal-surface electrode is located on the semiconductor layers and a rear-surface electrode having an opening is located on the rear surface of the substrate. The width of the opening is L, the distance between the rear-surface electrode and the light-emitting layer is t, L≦2 t, and the rear-surface electrode covers no more than 40% of the rear surface of the substrata.

The diode is comprised of the luminous chip electrode, phosphor and sealing material. The phosphor is comprised of the silicon chloride acid Mg Zn Ca (CMZSC) and alkali earth silicate and pyrosilicate phosphor. This phosphor with the other phosphor of the visible light combines the UV white light and LD. The CMZSC green phosphor can transform the blue light transmitted by the semiconductor compound into yellow light. Thus the transmitting spectrum covered area is broadened and the optical transform effect is improved.

A novel organic compound and a high-performance organic light-emitting element containing the same. The organic light-emitting element contains a novel compound having a fluoranthene structure.

The light source, comprises an evacuated container having walls, including an outer glass layer (23) which on at least part thereof is coated on the inside with a layer of phosphor (24) forming a luminescent layer and a conductive layer (25) forming an anode. The phosphor (24) is excited to luminescence by electron bombardment from a field emission cathode (40) located in the interior of the container. The field emission cathode (40) comprises a carrier having a diameter in the mm range. At least a portion of the surface of the carrier is provided with a conductive layer having surface irregularities in the form of tips, having a radial extension being less than about 10 μm. Due to the geometry and the tips, the electric field is concentrated and amplified at the field emission surface.

A light guide plate including a body and a plurality of prism microstructures is provided. The body has a bottom surface, a light emitting surface opposite to the bottom surface, and a plurality of side surfaces. The light emitting surface has a central area and at least one peripheral area outside the central area. The prism microstructures are disposed on the light emitting surface and the bottom surface. The prism microstructure disposed on the light emitting surface includes a plurality of first prism microstructures in the central area and a plurality of second prism microstructures in the peripheral area. A top angle θ₂ of the second prism microstructure is greater than a top angle θ₁ of the first prism microstructure. A backlight module including the above-mentioned light guide plate is also provided.

A fluorescent light emitting element includes a substrate; a phosphor layer that is provided on the substrate; an adhesive layer that is provided between the substrate and the phosphor layer; and a reflection unit that is provided between the adhesive layer and the substrate or between the adhesive layer and the phosphor layer. The phosphor layer is formed of a sintered body made of a cerium-activated garnet structure phosphor containing 0.05 atm % cerium, and a thickness of the phosphor layer is in a range of 100 μm to 250 μm.