White light LED and light converting luminophore

A technology of light-emitting diodes and phosphors, which is applied in the direction of light-emitting materials, semiconductor devices, and gas discharge lamps, and can solve problems such as not being applied

Inactive Publication Date: 2005-02-23
刘行仁 +1
View PDF2 Cites 25 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It has been reported earlier that in M 3 MgSi 2 o 8 :Eu, Mn and BaMg 2 Si 2 o 7 :Eu, Mn two kinds of silicates can produce effective Eu 2+ →Mn 2+ energy transfer, while obtaining Mn 2+ red emission (J. Electrochem Soc.1968, 115: 733; 1970, 117: 381), but has not been applied so far

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • White light LED and light converting luminophore
  • White light LED and light converting luminophore
  • White light LED and light converting luminophore

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Example 1: Weigh CaCO 3 10.50g, ZnO 1.2g, SiO 2 3.61g, CaCl 2 5.00g was ground and mixed uniformly, put into a corundum crucible, and after being kept at 1150°C for 3 hours, it was taken out and cooled to jade room temperature to obtain a white matrix material. Then weigh Eu 2 O 3 0.079g, Li 2 CO 3 0.52g and the above-mentioned matrix material were mixed and ground, then put into a crucible, and burned in a weak reducing atmosphere generated by the combustion of carbon particles at 1000°C for 3 hours. Take it out, wash with deionized water, sieving, and drying to obtain Ca with green body color 8 Zn(SiO 4 ) 4 Ce: 0.1Eu phosphor (CZSC: Eu). By the CZSC: Eu green phosphor, the second type (Y, Gd) 3 Al 5 O 12 : Ce yellow phosphor, use InGaN with emission wavelength of 455nm as LED chip, press figure 2 The light-emitting unit is made by the process shown. After the semiconductor light-emitting chip 1 is solidified, a thin transparent resin protective layer 3 is carefully coate...

Embodiment 2

[0041] Example 2: According to the semiconductor blue light chip and phosphor selected in Example 1, press figure 1 The packaging process shown produces a flat white LED. The chip 1 is solid-bonded on the lower negative plate 7, and the positive electrode 2 and the electrode 8 on the top of the chip are ultrasonically welded by the lead 6. The component is fixed by the opaque bracket 9, and then the groove is filled with phosphor 4 and resin glue 5. Make a flat white LED.

Embodiment 3

[0042] Example 3: Weigh BaCO 3 15.00g, Eu 2 O 3 0.557g, Mg(OH) 2 , 4MgCO 3 , 5H 2 O 13.90g, MnO 2 1.376g, SiO 2 9.60g, NH 4 Cl 1.00g is ground and mixed uniformly, put into a corundum crucible, burned for 3 hours in a weak reducing atmosphere produced by the combustion of carbon particles at 1200℃, and the product is washed, sieved and dried to obtain (Ba0.96Eu 0.04 )(Mg 1.8 Mn 0.2 )Si 2 O 7 Red phosphor, and the bivalent europium and bivalent manganese co-activated chlorosilicate magnesium zinc calcium CMZSC: Eu, Mn green phosphor and BaMgAl prepared by the method in Example 1 10 O 17 :Eu blue phosphor is mixed at a relative weight ratio of 0.40:0.55:0.05. Then it is mixed with UV-resistant silicone glue to form a powder glue, and carefully coated on the InGaN blue-violet chip with an emission wavelength of 395nm. After the powder glue is cured, it is finally encapsulated with a UV-resistant transparent epoxy resin into a common  5White LED.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
color rendering indexaaaaaaaaaa
Login to view more

Abstract

The diode is comprised of the luminous chip electrode, phosphor and sealing material. The phosphor is comprised of the silicon chloride acid Mg Zn Ca (CMZSC) and alkali earth silicate and pyrosilicate phosphor. This phosphor with the other phosphor of the visible light combines the UV white light and LD. The CMZSC green phosphor can transform the blue light transmitted by the semiconductor compound into yellow light. Thus the transmitting spectrum covered area is broadened and the optical transform effect is improved.

Description

1. Technical Field: [0001] The invention relates to a white light emitting diode and a phosphor for light conversion thereof, belonging to the technical field of optoelectronics and lighting. 2. Background technology: [0002] In the late 1990s, the emergence of white light-emitting diodes became a hot spot in the field of optoelectronics and lighting. White light-emitting diode (Light-Emitting Diode, LED for short) is a new solid-state light source, among which white-light LED composed of semiconductor light-emitting basket chip, long-wave ultraviolet light chip and phosphor organic combination has become the mainstream of development at home and abroad. In just a few years, its development is very rapid, and its luminous efficiency has now greatly exceeded that of incandescent lamps. White LED has many advantages such as high efficiency, energy saving, solid-state shock resistance, fast start-up, no flicker, no pollution, etc. Now it has been expanded to many application fields...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/77H01L33/00
CPCY02B20/181Y02B20/00
Inventor 刘行仁刘琳琳
Owner 刘行仁
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap