963395 results about "Physics" patented technology

In a thin film transistor (1), a gate insulating layer (4) is formed on a gate electrode (3) formed on an insulating substrate (2). Formed on the gate insulating layer (4) is a semiconductor layer (5). Formed on the semiconductor layer (5) are a source electrode (6) and a drain electrode (7). A protective layer (8) covers them, so that the semiconductor layer (5) is blocked from an atmosphere. The semiconductor layer (5) (active layer) is made of, e.g., a semiconductor containing polycrystalline ZnO to which, e.g., a group V element is added. The protective layer (8) thus formed causes decrease of a surface level of the semiconductor layer (5). This eliminates a depletion layer spreading therewithin. Accordingly, the ZnO becomes an n-type semiconductor indicating an intrinsic resistance, with the result that too many free electrons are generated. However, the added element works on the ZnO as an accepter impurity, so that the free electrons are reduced. This decreases a gate voltage required for removal of the free electrons, so that the threshold voltage of the thin film transistor (1) becomes on the order of 0V. This allows practical use of a semiconductor device which has an active layer made of zinc oxide and which includes an protective layer for blocking the active layer from an atmosphere.

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018 / cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018 / cm3 is used in the channel layer 2.

A transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like. A channel layer 11 formed of a transparent semiconductor such as zinc oxide ZnO. A transparent electrode is used for all of a source 12, a drain 13 and a gate 14, or a part of them. As the transparent electrode, a transparent conductive material such as conductive ZnO doped with, for example, group III elements is used. As a gate insulating layer 15, a transparent insulative material such as insulative ZnO doped with elements capable of taking a valence of one as a valence number or group V elements is used. If a substrate 16 must be transparent, for example, glass, sapphire, plastic or the like can be used as a transparent material.

A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018 / cm3 is used for the N-type region.

A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.

A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18 / cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.

One embodiment of the present invention is a color EL display characterized in that at least color filters, a thin film transistor circuit, an organic EL layer, and a common electrode are laminated in this order on a transparent substrate. Another embodiment of the invention is a method for producing a color EL display comprising the steps of forming color filters or a transparent substrate; forming a thin film transistor circuit; forming an organic EL layer; and forming a common electrode, wherein process temperatures of the steps of forming the thin film transistor circuit and subsequent steps are 200° C. or less.

An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.

This invention relates to novel, transparent oxide semiconductor thin film transistors (TFT's) and a process for making them.

A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.

A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

A thin film transistor of the present invention includes a semiconductor thin film (8); a gate insulating film (7) formed on one surface of the semiconductor thin film (8); a gate electrode (6) formed to be opposite to the semiconductor thin film (8) through the gate insulating film (7); a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor thin film (8); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film (9) formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film (8), and having a contact hole (10, 11) through which at least a part of each of the source region and the drain region is exposed wherein the source electrode (15) and the drain electrode (16) are connected to the semiconductor thin film (8) through the contact hole (10, 11).

A zinc oxide (ZnO) field effect transistor exhibits large input amplitude by using a gate insulating layer. A channel layer and the gate insulating layer are sequentially laminated on a substrate. A gate electrode is formed on the gate insulating layer. A source contact and a drain contact are disposed at the both sides of the gate contact and are electrically connected to the channel layer via openings. The channel layer is formed from n-type ZnO. The gate insulating layer is made from aluminum nitride / aluminum gallium nitride (AlN / AlGaN) or magnesium zinc oxide (MgZnO), which exhibits excellent insulation characteristics, thus increasing the Schottky barrier and achieving large input amplitude. If the FET is operated in the enhancement mode, it is operable in a manner similar to a silicon metal oxide semiconductor field effect transistor (Si-MOS-type FET), resulting in the formation of an inversion layer.

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018 / cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018 / cm3 is used in the channel layer 2.

A cutting and stapling device for use as an attachment to an electromechanical device driver comprises an upper jaw and a lower jaw which separate and close against one another in a continuously parallel alignment. The upper jaw includes a series of staple guides corresponding to one or more staples in a removable staple tray disposed within a lower jaw, whereby a blade and wedge having a threaded bore travel upon a matching threaded shaft in a channel disposed in the lower jaw below the staple tray, such that rotation of the threaded shaft causes movement of the wedge through the channel while a sloped surface of the wedge contacts the staples to push the staples against the staples guides, closing the staples.

A qualifying connection for an instrument attaches to a source of electrosurgery energy to and the instrument and has first and second parts coupled to the instrument and the source, respectively. Optical couplings on the connection transmit invisible energy to identify the instrument and are proximate on the first and second parts. A light modifier on the first part is proximal to the second part for modification of radiation in the infrared wavelengths so infrared transmitters encode signals and non contact coded proximity detectors on the second part are the coupled detectors. Non contact coded proximity detectors respond to modified infrared light establishing an Nth bit identification code. An infrared light supply in the source pass from the transmitters across the communicating couplings for encoding signals by modification of the infrared light with a light modifier. Mechanical attachments include conjugating male and female portions physically extending between the parts for mating engagement. The attachments juxtaposition the parts when the attachments geometrically conjugate to geographically positioning the couplings proximate for communicating. The attachments have one or more conductors for delivery of high frequency energy from the source to the instrument. A cable fits between the first part of the connection and the instrument and has electrical conductors for carrying energy passing through the first part of the connection from the source to the instrument. An identifying circuit couples to the second part and responds to invisible light optically communicated across the couplings for verifying the type of instrument connected by the cable to the source.

An organic electroluminescent element comprising a light emission layer and a hole blocking layer adjacent to the light emission layer, wherein, (i) the light emission layer contains a compound having a specified partial structure and having a molecular weight of not more than 1700; and (ii) the hole blocking layer contains a derivative selected from the group consisting of a styryl derivative, a boron derivative and a carboline derivative.

A near-to-eye display system for forming an image as an illuminated region on a retina of at least one eye of a user is disclosed. The system includes a source of modulated light, a proximal optic positionable adjacent an eye of the user to receive the modulated light. The proximal optic has a plurality of groups of optically redirecting regions. The optically redirecting regions are configured to direct a plurality of beams of the modulated light into a pupil of the eye to form a contiguous illuminated portion of the retina of the eye. A first group of the optically redirecting regions is configured to receive modulated light from the source and redirect beams of the modulated light into the pupil of the eye for illumination of a first portion of the retina. A second group of the optically redirecting regions is configured to receive modulated light from the source and redirect beams of the modulated light into the pupil of the eye for illumination of a second portion of the retina.

Azatriphenylene derivatives and their use in the electron-transporting layer of an electroluminescent device that comprises an anode, a spaced-apart cathode, and at least one electron-transporting layer disposed between the spaced-apart anode and cathode. Such EL devices provide lower drive voltage, improved power efficiency, and longer operational lifetime.

A core sampling biopsy device is compatible with use in a Magnetic Resonance Imaging (MRI) environment by being driven by either a pneumatic rotary motor or a piezoelectric drive motor. The core sampling biopsy device obtains a tissue sample, such as a breast tissue biopsy sample, for diagnostic or therapeutic purposes. The biopsy device may include an outer cannula having a distal piercing tip, a cutter lumen, a side tissue port communicating with the cutter lumen, and at least one fluid passageway disposed distally of the side tissue port. The inner cutter may be advanced in the cutter lumen past the side tissue port to sever a tissue sample. A cutter drive assembly maintains a fixed gear ratio relationship between a cutter rotation speed and translation speed of the inner cutter regardless of the density of the tissue encountered to yield consistent sample size.

An organic electroluminescence device (1) including: an anode (20) and a cathode (50), at least two organic emitting layers (30), (32) and (34) interposed between the anode and the cathode, and at least one intermediate connection layer (40) and (42) being provided between the organic emitting layers (30), (32) and (34), the intermediate connection layer (40) and (42) comprising an acceptor layer, a donor layer and an electron-transporting material layer being stacked in this order from the cathode (50), the electron-transporting material layer containing a non-complex compound with a nitrogen-containing heterocyclic structure.

A sensor and method of making the same for implantation in a body that includes a substrate with notches cut in the substrate to form a necked down region in the substrate; and at least one sensor electrode formed from one or more conductive layers. Preferably, the thickness of the substrate ranges from approximately 25μ to 350μ, but the thickness of the substrate can range from 5μ to 750μ. The sensor may be incorporated in to a sensor assembly includes a slotted needle having a slot. The notches creating the necked down region allow the substrate to slide into the slotted needle, which that has the slot narrow enough to permit passage of the necked down region. However, a non-necked down region of the substrate is prevented from pulling out of the slotted needle through the slot. The slot of the slotted needle may also permit the necked down region of the substrate to slide down the slot.

A biosensor comprises a space part for sucking and housing a sample formed of two upper and lower plates, the two plates being stuck together by an adhesive layer, the space part for sucking and housing the sample being constituted so as to be partially opened in the peripheral part and partially closed by the adhesive layer, and has a working electrode having at least glucose oxidase immobilized thereon and a counter electrode on the same plane of the plate.