1260 results about "Blocking layer" patented technology

An organic light-emitting device comprises an anode, a cathode and an organic layer formed between the anode and the cathode, and the organic layer comprises a hole injection layer, a hole transmission area, an electron blocking layer, a light-emitting area and an electron transmission area. The hole transport region comprises a first material and a second material, the first material and the second material are sequentially evaporated to form two hole transport layers, and the first material is selected from a compound shown in the formula 1; and the second material is selected from a compound shown in a formula 2. According to the invention, the first material with a high refractive index is used as the first hole transport layer, the second material with a low refractive index is used as the second hole transport layer, and the structures of the first material and the second material are respectively limited at the same time. The invention overcomes the limitation of a single material or a simple mixed material in the aspects of hole transport and luminous efficiency. .

Embodiments of the present application relate to the technical field of display, and provide a display panel and a display device, for use in improving the wide-angle anti-peeping effect of the display panel. The display panel comprises: a substrate; a plurality of light-emitting elements located on one side of the substrate, wherein each of the light-emitting elements comprises a first light-emitting unit and a second light-emitting unit; a first light blocking layer located on the side of the first light-emitting unit distant from the substrate, wherein the first light blocking layer comprises a first opening; and a second light blocking layer located on the side of the first light blocking layer distant from the substrate, wherein the second light blocking layer comprises a second opening. In a direction perpendicular to the plane where the substrate is located, both the first opening and the second opening at least partially overlap the first light-emitting unit; and the area of the first opening is greater than that of the second opening, and the orthographic projection of the second light blocking layer on the plane where the substrate is located at least partially covers the edge of the first opening.

The invention relates to the technical field of semiconductor devices, in particular to a low-working-current-density green light Micro-LED epitaxial structure and a preparation method thereof. The epitaxial structure comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer and a P-type semiconductor layer. The electron blocking layer is not arranged on the multi-quantum-well light-emitting layer, the multi-quantum-well light-emitting layer comprises four sub-layers including a first light blue light multi-quantum-well layer, a second blue light multi-quantum-well layer, a third green light multi-quantum-well layer and a fourth light blue light multi-quantum-well layer, and the In component content in the third green light multi-quantum-well layer is larger than that in other layers. The third cyan light multi-quantum well layer is a main light-emitting unit and is not provided with an electron blocking layer, so that the blocking effect on hole injection can be eliminated, the hole injection efficiency of the P-type semiconductor layer is remarkably improved, and the matching degree of electron hole concentration in a multi-quantum well light-emitting layer region is improved.

The invention relates to the technical field of chip preparation, and provides a chip based on an annular photonic crystal and a preparation method thereof. The preparation method comprises the following steps: growing a nucleating layer on a substrate; growing a superlattice structure on one side, away from the substrate, of the nucleating layer; sequentially growing an n-type coating layer, an n-type waveguide layer, a quantum well and a p-type electron blocking layer on one side, deviating from the nucleating layer, of the superlattice structure; etching a plurality of annular cavities on the p-type electron barrier layer to form an annular photonic crystal; growing a p-type extension contact layer on one side, deviating from the quantum well, of the p-type electron blocking layer; and carrying out in-situ annealing treatment. According to the preparation method, the directivity of the photonic band gap can be effectively adjusted, uniform light waves in all directions on the side face can be formed, so that leakage of laser from a non-light-emitting area on the side face is restrained, the light emitting efficiency is improved, the annular photonic crystals are periodically distributed, and the light beam quality is effectively guaranteed.

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and relates to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a non-doped GaN layer, an N-type GaN layer, an electron dredging layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer which are stacked on the substrate in sequence, the electron dredging layer comprises a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are sequentially stacked, the first sub-layer is a Si3N4 layer, the second sub-layer comprises an AlGaN layer, a first InGaN layer and a first GaN layer which are periodically and alternately stacked, the third sub-layer comprises a second GaN layer and a second InGaN layer which are periodically and alternately stacked, and the fourth sub-layer is a Si3N4 layer. And the fourth sub-layer comprises an AlInGaN layer, a third InGaN layer and a third GaN layer which are periodically and alternately stacked. According to the invention, while the electronic expansibility is improved, excessive electrons are prevented from entering the multi-quantum well layer to generate electron overflow.

Semiconductor devices including one or more hydrogen-blocking layers are described. In one example, a semiconductor device comprises a semiconductor substrate including a source region, a gate region, a drain region, and a drain access region, where a heterojunction structure is disposed over the semiconductor substrate. The heterojunction structure includes a buffer layer over the semiconductor substrate and a barrier layer over the buffer layer. A p-doped III-N layer is disposed over the barrier layer in the gate region and a gate electrode is formed over the p-doped III-N layer. A first hydrogen-blocking layer is disposed over the gate electrode where the first hydrogen-blocking layer is configured to arrest diffusion of hydrogen into the p-doped III-N layer from a dielectric layer formed after forming the gate electrode.

An electroluminescent display device according to an example embodiment of the present disclosure may include a substrate having an active area and a non-active area, an oxide thin film transistor disposed on the substrate, an inorganic layer disposed on the oxide thin film transistor, an organic layer disposed on the inorganic layer, at least one hole disposed in the organic layer of the non-active area, a hydrogen blocking layer disposed on the organic layer and an inner surface of the hole and a light emitting element disposed on the organic layer and including an anode, a light emitting unit, and a cathode. As a result, characteristics and reliability of the thin film transistor can be improved by preventing hydrogen from flowing into the oxide thin film transistor.

The invention relates to a P-type GaN LED epitaxial structure based on segmented annealing and compensation doping and a preparation method thereof, and belongs to the technical field of nitride semiconductor epitaxial growth and doping activation. The epitaxial structure sequentially comprises a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well active layer, a P-type AlGaN electron barrier layer, a P-type GaN layer and an MgN compensation layer which are arranged on the substrate layer; wherein the MgN compensation layer is a high-concentration magnesium-doped nitride semiconductor layer, is arranged on the P-type GaN layer, and is used for compensating Mg loss and inhibiting nitrogen vacancy formation in the subsequent annealing process. The preparation method comprises the steps of performing multi-stage annealing treatment on the P-type GaN layer, performing epitaxial growth and annealing on the compensation layer, and finally performing low-temperature post-treatment annealing to form a surface passivation region. According to the structure, the Mg activation efficiency and the hole concentration are remarkably improved through an in-vivo activation and surface compensation synergistic mechanism, the contact resistance is reduced, the conductivity and the light-emitting performance of an LED device are improved, and the structure has excellent implementability and industrialization prospects.

The invention discloses a thermal-decay-resistant red light Micro LED epitaxial structure and a preparation method thereof. The epitaxial structure sequentially comprises a substrate layer, an n-type buffer layer, an n-type etching barrier layer, an n-type ohmic contact layer, an n-type limiting layer, a quantum well structure, a p-type spacer layer, a p-type electron barrier layer and a p-type ohmic contact layer from bottom to top. Wherein the quantum well structure is formed by alternating 1-5 pairs of InGaP well layers and three-section type p-type AlGaInP barrier layers, and the three sections of barrier layers adopt gradient energy level design and are all subjected to p-type doping; according to the invention, the problems of carrier loss and low recombination efficiency at high temperature in the prior art are solved by blocking electron overflow through the gradient energy level barrier and supplementing the hole concentration through p-type doping, so that the 85 DEG C external quantum efficiency attenuation rate is less than or equal to 10%, the service life is prolonged to more than 50,000 hours, and the process is compatible with mass production and is suitable for the fields of display, illumination and the like.

The present invention relates to a metal complex having a structure of chemical formula (I). The metal complex is applied to an organic light-emitting device which emits deep red or near-infrared light, and shows a lower driving voltage and higher luminous efficiency, and has greatly prolonged service life. Therefore, the metal complex has the potential of being applied in the field of organic light-emitting devices. Also provided is an organic light-emitting device, including a cathode, an anode, and an organic layer. The organic layer is one or more of a hole injection layer, a hole transport layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer; and at least one layer in the organic layer contains the compound of structural formula (I).

The invention discloses a recoverable high-barrier-property multilayer composite film and a preparation method thereof. The composite film adopts a five-layer symmetrical structure, namely a heat sealing layer, a first bonding layer, a blocking layer, a second bonding layer and a surface protection layer. Wherein the barrier layer is a montmorillonite modified ethylene-vinyl alcohol copolymer, and montmorillonite is modified by a carboxyl functionalized ammonium bromide intercalator; the bonding layer is maleic anhydride grafted polylactic acid; the heat sealing layer contains modified composite filler; the surface protection layer is a polyethylene / graphene modified coupling agent composite system. The preparation method comprises the steps of intercalation modified montmorillonite preparation, barrier layer material melt blending, five-layer co-extrusion casting, gradient hot pressing and curing treatment. The problems that a traditional high-barrier film is unrecyclable, the interlayer binding force is weak and the high-temperature stability is poor are solved, the ultrahigh barrier performance that the oxygen transmission rate is smaller than or equal to 0.5 cm < 3 > / (m < 2 >. 24 h) and the water vapor transmission rate is smaller than or equal to 1.0 g / (m < 2 >. 24 h) is achieved, and the mechanical property retention rate is larger than or equal to 85% after recycling and re-pelletizing.

The invention provides a surface-emitting gallium nitride VCSEL laser chip and an epitaxial defect suppression preparation method thereof, and relates to the technical field of laser chips, the surface-emitting gallium nitride VCSEL laser chip comprises a substrate, a low-temperature nucleating layer, a high-temperature recovery layer, a stress regulation type nano mask composite defect blocking layer, an n-type nitride DBR reflector, an active region, a polarization enhanced tunnel junction and the like, the defect blocking layer adopts an in-situ silicon nitride nano-porous mask layer to be matched with an aluminum gallium nitride / gallium nitride stress compensation superlattice layer, through pulse type lateral epitaxial overgrowth annihilation penetrating dislocation, and the n-type nitride DBR reflector adopts an AlInN / GaN lattice matching material system to be combined with a hydrogen etching interruption modification technology, so that thick film growth with zero cracks and high reflectivity is realized; a polarization enhanced tunneling junction is used at the top to replace ITO, and the hole tunneling probability is enhanced by piezoelectric polarization in InGaN, so that efficient current injection with low working voltage and no absorption loss is realized, the dislocation density and the device voltage are remarkably reduced, and the yield of an epitaxial wafer and the photoelectric conversion efficiency are improved.

The present invention provides a light-emitting diode epitaxial wafer and a method for fabricating the same. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a three-dimensional nucleation layer, an undoped GaN layer, an N-type GaN layer, a multi-quantum well layer, an electron blocking layer, and a P-type GaN layer sequentially deposited on the substrate. The three-dimensional nucleation layer comprises a stacked first and second three-dimensional nucleation sublayers, the thickness of the first three-dimensional nucleation sublayer being less than that of the second three-dimensional nucleation sublayer, both being MgGaN layers, and the growth temperature of the second three-dimensional nucleation sublayer being 10 to 100°C higher than that of the first three-dimensional nucleation sublayer. This light-emitting diode epitaxial wafer can increase the density of V-pits, improve carrier injection efficiency, and enhance the optoelectronic performance of the light-emitting diode.

This invention relates to an aromatic amine organic compound and an organic electroluminescent device containing the same, belonging to the field of semiconductor materials technology. The structure of the compound provided by this invention is shown in general formula (1): When the hole transport material or electron blocking layer material of the organic electroluminescent device is prepared by using the aromatic amine compound of this invention, the device voltage can be reduced and the device life can be extended at the same time, especially the device high temperature life is significantly improved.

An image sensor device may include a pixel sensor array and a black level correction (BLC) region. The BLC region may include a sensing region in a substrate and a light-blocking layer above the sensing region. An anti-reflection array may be formed in the light-blocking layer. The anti-reflection array includes holes, trenches, and / or other structural features such that the light-blocking layer includes two or more areas in which the top surface of the light-blocking layer is at different heights in the image sensor device. The different heights of the top surface of the light-blocking layer reduce the likelihood of light being reflected off of the light-blocking layer and toward the pixel sensor array. The anti-reflection array may reduce the likelihood of occurrence of flares or hot spots in images generated by the image sensor device, which may increase the image quality of the images generated by the image sensor device.

Methods of forming a metal gate structure of a stacked multi-gate device are provided. A method according to the present disclosure includes depositing a titanium nitride (TiN) layer over a channel region that includes bottom channel layers and top channel layers, depositing a dummy fill layer to cover sidewalls of the bottom channel layers, after the depositing of the dummy fill layer, selectively forming a blocking layer over the TiN layer along sidewalls of the top channel layers, selectively removing the dummy fill layer to release the bottom channel layers, selectively depositing a first work function metal layer to wrap around each of the bottom channel layers, forming a gate isolation layer over a top surface of the first work function metal layer, removing the blocking layer, releasing the top channel layers, and selectively depositing a second work function metal layer to wrap around each of the top channel layers.

According to one embodiment, a display device includes an anode, an organic EL element layer including a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer, and a cathode, wherein ΔE2_LUMO is defined as a potential barrier between the electron transport layer and the hole blocking layer, and the light-emitting layer, ΔE2_HOMO is defined as a potential barrier between the hole transport layer and the electron blocking layer, and the light-emitting layer, and each of ΔE2_LUMO and ΔE2_HOMO is 0.1 eV or higher and 0.5 eV or less.

The invention relates to the technical field of communication cables, and discloses a water-blocking flame-retardant underwater communication cable with a self-repairing function, which comprises an insulating layer, a conductor layer is arranged in the insulating layer, an optical fiber layer is arranged in the conductor layer, a spiral groove is formed in the outer wall of the insulating layer, and a Bragg grating is wound in the spiral groove. A shielding layer is arranged outside the insulating layer, a radial waterproof layer is arranged outside the shielding layer, and an inner sheath is arranged outside the radial waterproof layer; parts providing communication, power supply and sensing monitoring functions share one set of shielding layer, radial waterproof layer and composite armor layer, so that the complexity of underwater deployment of the cable is reduced; the formed air cavity is used for providing space for heating expansion of the cable, meanwhile, airflow moving in the air cavity can conduct local heat exchange with the conductor layer, and local overheating of the cable is avoided; the composite armor layer with a double-layer structure can prevent the braided belt from deviating and being unable to reset due to excessive local stretching, and the service life of the cable is prolonged.

A formulation and method for producing a multilayer film and a coated multilayer film comprising a barrier layer including a polar polymer resin, such as EVOH, as described.

A method of forming a graphene device includes: providing a glass substrate with a blocking layer disposed thereon to form a stack; providing a first electrode and a second electrode; increasing the temperature of the stack to at least 100° C.; applying an external electric field (VP) to the first electrode such that at least one metal ion of the glass substrate migrates toward the first electrode to create a depletion region in the glass substrate adjacent the second electrode; decreasing the temperature of the stack to room temperature while applying the external electric field to the first electrode; and after reaching room temperature, setting the external electric field to zero to create a frozen voltage region adjacent the second electrode.

A metasurface optical device can include an array of pillars 13 on a first-side 11f of a substrate 11 aligned with an aperture 15 of, or proximate to, a blocking-layer 12. The blocking-layer 12 can located on the first-side 11f of the substrate 11, on a second-side 11s of the substrate 11 opposite of the first-side 11f, or both. The blocking-layer 12 can prevent light from transmitting through the device in undesirable locations. The blocking-layer 12 can be opaque to incident light and can include an absorptive-layer. Thus, the blocking-layer 12 can have dual functions—blocking and absorbing light.

The invention relates to the technical field of light emitting diodes, and discloses a multiband LED epitaxial structure and a preparation method thereof, the epitaxial structure comprises a substrate, a buffer layer, an N-type semiconductor layer, a low temperature stress release layer, a multi-quantum well light emitting layer, an electron blocking layer and a P-type semiconductor layer, the multi-quantum well light-emitting layer comprises a first multi-quantum well layer, a second multi-quantum well layer, a third multi-quantum well layer and a fourth multi-quantum well layer which are sequentially stacked, and each multi-quantum well layer comprises an InGaN quantum well layer and a variable barrier height regulation barrier layer which are periodically and alternately stacked. The variable barrier height regulation barrier layer comprises five sub-layers which are sequentially stacked on the InGaN quantum well layer, lambda 1 > lambda 2 > lambda 3, and lambda 3 = lambda 4. The healthy full-spectrum white light LED light source with the high color rendering index can be generated, the short-wave blue light is small in proportion, damage to human eye omentum cells is small, and the light emitting efficiency is high.

The invention provides a compound with an electron transmission function, an organic electroluminescent device containing the compound and application of the compound, the structure of the compound takes 9-alkyl-9-phenyl fluorenyl, phenanthryl and a triazine group as main components, the 9-alkyl-9-phenyl fluorenyl is one of core structures, fluorene is a polycyclic aromatic hydrocarbon with better planarity, and the triazine group is one of the core structures. Alkyl and phenyl are introduced to the ninth site to generate strong spatial repulsive force with a fluorene ring, a three-dimensional and non-planar propeller-shaped structure is formed, and the non-planar structure can effectively inhibit close packing of molecules in a solid state, so that concentration quenching and excimer formation caused by pi-pi packing are prevented, and the stability of the fluorescent probe is improved. And moreover, the rigid and non-planar structure can also effectively improve the thermal stability of the material, and the service life of the device is prolonged. The compound provided by the invention is used as an electron transport layer and a hole blocking layer in a light-emitting device, so that the device has low driving voltage, high luminous efficiency and long service life.

The present disclosure relates to semiconductor manufacturing technology, particularly relates to a light-emitting diode, which includes a light-emitting layer, an N-type semiconductor layer, a P-type semiconductor layer, an electron blocking layer and a connecting layer. The light- emitting layer has a first side and a second side opposite to each other. The N-type semiconductor layer is disposed on the first side of the light-emitting layer. The P-type semiconductor layer is disposed on the second side of the light-emitting layer. The electron blocking layer is disposed between the light-emitting layer and the P-type semiconductor layer. The connecting layer is disposed between the light-emitting layer and the electron blocking layer, wherein, the connecting layer is doped with indium.

The invention belongs to the field of lasers, and discloses a growth method for reducing laser Ith through N grating burying, which subversively adopts an N-type grating structure, uses a built-in P-N junction formed by the N-type grating structure and a subsequent P-type buried layer as a natural and efficient current blocking layer, and structurally eliminates a current leakage path. Afterwards, in the heating stage, trace arsine is introduced to carry out atomic-scale protection on the sensitive grating morphology, at the optimal mass transport temperature, the high mobility characteristic of indium atoms is utilized to carry out shape-preserving filling on grating grooves, flawless preliminary planarization is achieved, and through variable-temperature thickening growth and high-temperature annealing in the pure phosphorus atmosphere, the high-temperature-resistant grating is obtained. And performing quality optimization and defect repair on the buried layer and the key interface. The series of linked steps ensure that the indium phosphide buried layer with flat atomic scale and complete crystal lattice can grow on the fragile N-type grating, and ensure that a high-quality covering layer and an active region grow on the N-type grating.

A method for making a semiconductor structure, including: forming a conductive layer; forming a patterned mask layer on the conductive layer; patterning the conductive layer to form a recess and a conductive feature; forming a first dielectric layer over the patterned mask layer and filling the recess with the first dielectric layer; patterning the first dielectric layer to form an opening; selectively forming a blocking layer in the opening; forming an etch stop layer to cover the first dielectric layer and exposing the blocking layer; forming on the etch stop layer a second dielectric layer; forming a second dielectric layer on the etch stop layer; patterning the second dielectric layer to form a through hole and exposing the conductive feature; and filling the through hole with an electrically conductive material to form an interconnect electrically connected to the conductive feature.

The invention relates to the technical field of LEDs, and discloses a flip light-emitting diode chip and a preparation method thereof. The flip light-emitting diode chip comprises a substrate and an epitaxial layer stacked on the substrate, the epitaxial layer is provided with a current expansion layer, a current blocking layer, a reflecting layer, a first insulating layer, a connecting layer and a second insulating layer, a fourth through hole and a fifth through hole are formed in the second insulating layer, an N-type bonding pad is arranged at the fourth through hole, and a P-type bonding pad is arranged at the fifth through hole; wherein the connecting layer comprises a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer; the first sub-layer comprises a Cr layer, an Al layer, a first Ti layer, a first Pt layer, a second Ti layer and a second Pt layer which are stacked in sequence; the second sub-layer is an AlCu alloy layer; the third sub-layer comprises 2 to 4 layers of CuNi alloy layers; and the fourth sub-layer is a Ti layer. By implementing the flip light-emitting diode chip, the effective contact between the bonding pad and the connecting layer can be realized on the basis of not increasing the cost, and the heat dissipation performance of the flip light-emitting diode chip is improved.

A method for manufacturing a semiconductor device includes: forming a first conductive interconnect which penetrates a dielectric layer disposed over a substrate; forming a patterned dielectric layer on the dielectric layer, the patterned dielectric layer being formed with a trench and the first conductive interconnect being exposed from the trench; selectively forming a blocking layer to cover the first conductive interconnect, the blocking layer being formed using an acidic solution including a blocking material; selectively forming a barrier material layer on the dielectric layer and the patterned dielectric layer; removing the blocking layer; forming a conductive material layer on the barrier material layer; and removing a portion of the conductive material layer and a portion of the barrier material layer to form a second conductive connected to the first conductive interconnect.

The invention provides a nitride semiconductor laser. The laser comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper coating layer which are sequentially arranged from bottom to top. And the lower waveguide layer comprises any one or a combination of more of InGaN, GaN, InN, AlInGaN, an InGaN / GaN superlattice, an InGaN / AlGaN superlattice, an InGaN / AlGaN superlattice, an InGaN / AlInN superlattice and an InGaN / AlInGaN superlattice. The peak rate electric field distribution of the lower waveguide layer has an arc distribution, and the peak rate electric field distribution has a curve distribution of a function y = logax (a > 1). The drift rate distribution of the saturated electrons of the lower waveguide layer has an arc-shaped distribution, and the drift rate distribution of the saturated electrons has a curve distribution of a third quadrant of a function y = x-b (b > 1, b is an odd number). The density distribution of valence band effective states of the lower waveguide layer has a curve distribution of a third quadrant of a function y = (cx + 1) / (cx-1) (c > 1).

An organic semiconductor device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-transport layer and alight-emitting layer. The hole-transport layer is positioned between the anode and the light-emitting layer. The hole-transport layer is not in contact with the anode. The hole-transport layer includes a transport layer material for a light-emitting device and the GSP_slope that is a potential gradient of a surface potential of an evaporated film of the material is higher than or equal to 20 (mV / nm).