2843 results about "Blocking layer" patented technology

The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type semiconductor layer. The multi-quantum well light-emitting layer comprises a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are stacked in sequence, and each of the first sub-layer, the second sub-layer, the third sub-layer and the fourth sub-layer comprises an InGaN quantum well layer and a GaN quantum barrier layer which are periodically and alternately stacked; an electron injection layer is inserted into at least one of the GaN quantum barrier layer of the first sub-layer, the GaN quantum barrier layer of the second sub-layer and the GaN quantum barrier layer of the third sub-layer; and a hole injection layer is inserted into the GaN quantum barrier layer of the fourth sub-layer. By implementing the invention, the electron hole matching degree of the multi-quantum well light-emitting layer can be improved, so that the luminous efficiency of the light-emitting diode is improved.

The invention relates to the field of soft robots, in particular to a self-growing robot based on vacuum layer blocking and a variable stiffness method thereof, and the self-growing robot comprises a main body, a base, a blocking layer, an electromagnetic valve and an end cover; the end cover is fixed at the tip of the main body and consists of an outer end cover, an inner end cover and an electromagnet; the blocking layer is composed of skin flaps and a sealing bag, the skin flaps are formed by overlapping multiple layers of polyester films and packaged in the sealing bag, and the blocking layer is vacuumized to enable the layer interference skin flaps to be overlapped to increase the rigidity of the blocking layer; the base is divided into an inflation layer and an exhaust layer, the main body is stored in the inflation layer of the base after being turned inwards, the main body is fixedly connected to the base, and after the base is inflated, the tip end of the main body is driven by air pressure to be turned outwards for growth; furthermore, the blocking layer is fixed on the main body and is connected with the base air exhaust layer through an electromagnetic valve; the problem that the rigidity of a main body becomes poor after long-span extension of the self-growing robot can be solved.

The invention provides a light-emitting diode chip and a preparation method thereof, and the light-emitting diode chip comprises a conductive silicon wafer, a metal bonding layer, an N-type conductive metal layer, a first insulation protection layer, a P-type conductive metal layer, a P-type reflection metal layer, a current blocking layer, a current expansion layer, and an epitaxial layer which are stacked from bottom to top. The projection of the edge of the P-type conductive metal layer on the current expansion layer is located in the projection of the isolation groove on the current expansion layer, and the ratio of the distance between the projection of the edge of the P-type conductive metal layer on the current expansion layer and the projection of the edge of the isolation groove on the current expansion layer to the width of the isolation groove is 1 / 3-2 / 3. The isolation groove and the cutting wall are arranged on the current expansion layer, and the distance proportion relation between the edge of the P-type conductive metal layer and the isolation groove is favorable for controlling the distribution of current in the light-emitting diode chip, so that the current is prevented from being excessively concentrated, the current is more uniformly expanded to the epitaxial layer, and the overall light-emitting efficiency and stability of the light-emitting diode chip are improved.

The invention discloses an impact-resistant and distortion-resistant outdoor polyethylene power cable, and relates to the technical field of cables, the impact-resistant and distortion-resistant outdoor polyethylene power cable comprises a cable core, four annularly distributed wire cores are arranged in the cable core, each wire core is composed of an inner-layer conductor, an outer-layer conductor, a heat conduction enhancement layer, an inner enhancement layer and an inner insulation layer, a shielding combination layer is arranged outside a wrapping layer, and a shielding layer is arranged outside the wrapping layer. The shielding combination layer is composed of a high-conductivity metal thin film layer, a nanometer shielding layer and a protective coating, the anti-impact combination layer is arranged outside the shielding combination layer, the anti-impact combination layer is composed of an impact dispersion layer and an energy absorption layer, the anti-distortion combination layer is arranged outside the anti-impact combination layer, and the anti-distortion combination layer is composed of an impact dispersion layer and an energy absorption layer. The anti-distortion combination layer is composed of a core layer and an elastic buffer layer, an outer sheath is arranged outside the anti-distortion combination layer, and the outer sheath is composed of a reinforcing layer, a blocking layer and an outer protective layer, so that the problems that the power cable is poor in impact resistance and distortion resistance and inconvenient to maintain are solved.

The invention provides a high-barrier fresh-keeping low-temperature heat-sealing composite film and a manufacturing process and application thereof, the composite film sequentially comprises a heat-sealing layer, a barrier layer, a reinforcing layer and a surface treatment layer from the inner layer to the outer layer, and the layers are bonded through bonding layers. The heat-sealing layer is prepared from modified polyethylene, polypropylene and a heat-sealing auxiliary agent, and the barrier layer is made of a composite material of nano aluminum oxide, polyvinylidene fluoride and an ethylene-vinyl alcohol copolymer. The enhancement layer is a polyester film, and the surface treatment layer is subjected to corona treatment. The composite film is prepared through a specific manufacturing process, and the specific manufacturing process comprises the steps of preparation of the heat sealing layer and the blocking layer, compounding, curing treatment, surface treatment and the like. The composite film disclosed by the invention has excellent barrier property and low-temperature heat-sealing capability, is suitable for vacuum packaging or modified atmosphere packaging of foods, and effectively prolongs the fresh-keeping period and the shelf life of the foods.

Methods of forming a metal gate structure of a stacked multi-gate device are provided. A method according to the present disclosure includes depositing a titanium nitride (TiN) layer over a channel region that includes bottom channel layers and top channel layers, depositing a dummy fill layer to cover sidewalls of the bottom channel layers, after the depositing of the dummy fill layer, selectively forming a blocking layer over the TiN layer along sidewalls of the top channel layers, selectively removing the dummy fill layer to release the bottom channel layers, selectively depositing a first work function metal layer to wrap around each of the bottom channel layers, forming a gate isolation layer over a top surface of the first work function metal layer, removing the blocking layer, releasing the top channel layers, and selectively depositing a second work function metal layer to wrap around each of the top channel layers.

The embodiment of the invention provides a display panel and a display device, relates to the technical field of display, and aims to improve the large-viewing-angle peep-proof effect of the display panel. The display panel includes: a substrate; a plurality of light-emitting elements located at one side of the substrate, wherein the light-emitting elements comprise a first light-emitting unit and a second light-emitting unit; the first light blocking layer is located on the side, away from the substrate, of the first light emitting unit, and the first light blocking layer comprises a first opening; the second light blocking layer is located on the side, away from the substrate, of the first light blocking layer, and the second light blocking layer comprises a second opening; the first opening and the second opening are at least partially overlapped with the first light-emitting unit in the direction perpendicular to the plane where the substrate is located; the area of the first opening is larger than that of the second opening, and the orthographic projection of the second light blocking layer on the plane where the substrate is located at least partially covers the edge of the first opening.

An organic light-emitting device comprises an anode, a cathode and an organic layer formed between the anode and the cathode, and the organic layer comprises a hole injection layer, a hole transmission area, an electron blocking layer, a light-emitting area and an electron transmission area. The hole transport region comprises a first material and a second material, the first material and the second material are sequentially evaporated to form two hole transport layers, and the first material is selected from a compound shown in the formula 1; and the second material is selected from a compound shown in a formula 2. According to the invention, the first material with a high refractive index is used as the first hole transport layer, the second material with a low refractive index is used as the second hole transport layer, and the structures of the first material and the second material are respectively limited at the same time. The invention overcomes the limitation of a single material or a simple mixed material in the aspects of hole transport and luminous efficiency. .

Embodiments of the present application relate to the technical field of display, and provide a display panel and a display device, for use in improving the wide-angle anti-peeping effect of the display panel. The display panel comprises: a substrate; a plurality of light-emitting elements located on one side of the substrate, wherein each of the light-emitting elements comprises a first light-emitting unit and a second light-emitting unit; a first light blocking layer located on the side of the first light-emitting unit distant from the substrate, wherein the first light blocking layer comprises a first opening; and a second light blocking layer located on the side of the first light blocking layer distant from the substrate, wherein the second light blocking layer comprises a second opening. In a direction perpendicular to the plane where the substrate is located, both the first opening and the second opening at least partially overlap the first light-emitting unit; and the area of the first opening is greater than that of the second opening, and the orthographic projection of the second light blocking layer on the plane where the substrate is located at least partially covers the edge of the first opening.

A display device includes a display area in which a plurality of first pixels and second pixels including a plurality of pixel electrodes spaced apart from each other are disposed, a first light blocking layer disposed in the display area and including a plurality of holes disposed to overlap the pixel electrodes, a plurality of color filters disposed on the first light blocking layer to correspond to the holes, and a second light blocking layer disposed on the color filter and disposed to correspond to the pixel electrodes of the second pixels, the first light blocking layer including a plurality of divided portions disposed around the holes of the second pixel and penetrating the first light blocking layer, and the color filters disposed in the second pixel and disposed to cover the hole of the first light blocking layer, where the divided portions are disposed to correspond to the holes.

The invention relates to the technical field of semiconductor devices, in particular to a low-working-current-density green light Micro-LED epitaxial structure and a preparation method thereof. The epitaxial structure comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer and a P-type semiconductor layer. The electron blocking layer is not arranged on the multi-quantum-well light-emitting layer, the multi-quantum-well light-emitting layer comprises four sub-layers including a first light blue light multi-quantum-well layer, a second blue light multi-quantum-well layer, a third green light multi-quantum-well layer and a fourth light blue light multi-quantum-well layer, and the In component content in the third green light multi-quantum-well layer is larger than that in other layers. The third cyan light multi-quantum well layer is a main light-emitting unit and is not provided with an electron blocking layer, so that the blocking effect on hole injection can be eliminated, the hole injection efficiency of the P-type semiconductor layer is remarkably improved, and the matching degree of electron hole concentration in a multi-quantum well light-emitting layer region is improved.

The invention discloses a display panel and a display device. The display panel comprises a driving backboard, a pixel definition layer, a light emitting layer, a first light blocking layer and a black matrix layer. Wherein at least part of the first light blocking layer covers the inner wall of each pixel hole and is in contact with the inner wall of each pixel hole, so that at least part of large-viewing-angle light rays emitted by the light emitting layer in the pixel holes can be blocked by the first light blocking layer, and the large-viewing-angle light rays emitted by the light emitting layer in the pixel holes can be blocked by the first light blocking layer. Therefore, the possibility that large-view-angle light rays are emitted from the areas corresponding to the adjacent pixel holes is reduced, the risk that the display panel leaks light under the large view angle is reduced, and then the peep-proof effect of the display panel can be improved.

The invention belongs to the technical field of superconducting wires, and discloses a Ni3Sn superconducting wire with a stable RRR value and a preparation method of the Ni3Sn superconducting wire. An oxygen-free copper rod, a Ta sheet and a thin-wall oxygen-free copper sheath are prepared into a Cu / Ta / Cu composite tube, meanwhile, subcomponents are densely arranged and loaded into a Ta barrier layer, then the Ta barrier layer is loaded into the prepared Cu / Ta / Cu composite tube, a final Nb3Sn blank with a double-layer Ta structure is obtained, and the Nb3Sn superconducting wire is prepared through multiple times of stretching. According to the invention, a double-Ta barrier layer structure in the Nb3Sn superconducting wire is realized, and the risk that an original single Ta barrier layer structure is broken in a stretching process to cause diffusion of Sn to a copper stable layer and reduce the RRR value of the wire is reduced. Compared with a traditional single-layer Ta tube superconducting wire, the RRR value of the Nb3Sn superconducting wire prepared through the method is obviously increased, and the Nb3Sn superconducting wire is more stable.

Provided is a semiconductor laser and a display device thereof. The semiconductor laser includes a first semiconductor layer, a second semiconductor layer, and an active layer located therebetween; a first waveguide layer is disposed between the first semiconductor layer and the active layer, and a second waveguide layer is disposed between the second semiconductor layer and the active layer; an electron blocking layer is disposed between the second waveguide layer and the second semiconductor layer; the electron blocking layer includes at least a part of a P-type doped layer on a side close to the second semiconductor layer, in which a composition of the P-type doped layer is greater than 1E19−3; and a P-type doping concentration of the side of the electron blocking layer close to the second semiconductor layer is higher than a P-type doping concentration of the electron blocking layer away from the second semiconductor layer.

The utility model belongs to the technical field of perovskite cells, and discloses a novel packaging structure of a perovskite solar cell. Comprising a substrate and a perovskite solar cell arranged above the substrate, the perovskite solar cell is coated with a first packaging layer, a second packaging layer is arranged above the first packaging layer, the second packaging layer comprises a plurality of groups of blocking layers, each blocking layer comprises a hydrophobic layer and a water oxygen absorption layer which are alternately arranged from bottom to top, and the hydrophobic layers and the water oxygen absorption layers are arranged on the substrate. A hydrophobic layer is arranged on the uppermost layer in the barrier layers; and the blocking layer is coated with a sealing layer. And external water vapor and oxygen are subjected to multiple absorption and multiple blocking, so that the probability that the water vapor enters the perovskite battery is reduced. The water vapor barrier property is improved, the water vapor is prevented from permeating the surface of the perovskite solar cell, the probability of degradation caused by water vapor entering a perovskite layer in the perovskite solar cell is reduced, and the service life of the perovskite solar cell is prolonged.

The utility model relates to a toy water polo which comprises a pair of petal bodies and a connecting part for connecting the petal bodies, each petal body comprises a body and an annular edge part extending inwards from the circumferential edge of the body, and each annular edge part comprises a magnetic attraction assembly; each magnetic attraction assembly comprises a fixing assembly and at least two magnetic attraction parts, each fixing assembly comprises at least two fixing shells and at least two connecting strips, each fixing shell is fixedly connected to the surface of the corresponding magnetic attraction part, and at least one end of each fixing shell is connected with one connecting strip; when the petal bodies are in the closed state, the petal bodies jointly define a water carrying cavity, the magnetic attraction pieces on the petal bodies attract each other so that the annular edge portions of the petal bodies can be tightly attached, and therefore a water blocking layer is formed to seal the water carrying cavity. According to the toy water polo, the combination area of the toy water polo and the annular edge portion is increased, firmness is improved, the risk that the magnetic attraction assembly falls off from the petal body is greatly reduced, and safety is improved.

The invention relates to the technical field of semiconductor devices, in particular to a multiband light-emitting diode epitaxial structure and a preparation method thereof. The multiband light-emitting diode epitaxial structure sequentially comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type semiconductor layer from bottom to top, the multi-quantum well light-emitting layer comprises four sub-layers, namely a first long-wave cyan light multi-quantum well layer, a second short-wave cyan light multi-quantum well layer, a third long-wave blue light multi-quantum well layer and a fourth short-wave blue light multi-quantum well layer which are sequentially stacked and grown from bottom to top, and the light-emitting wavelengths are sequentially decreased. Meanwhile, by combining the design of the sub-layers of the multiple quantum well light-emitting layers and through the synergistic effect of exciting light of all wave bands, the overall excitation efficiency can be improved, full-spectrum white light is output, the full-spectrum white light is closer to sunlight, the light-emitting efficiency is high, the color rendering property is good, the stability is better, and harm to human eyes is small.

The invention discloses a GaN-based blue-green light LED epitaxial structure and a preparation method thereof. The GaN-based blue-green light LED epitaxial structure comprises a substrate, and a buffer layer, a 3D layer, a U-GaN layer, an N-GaN layer, a multi-quantum well layer, an electron blocking layer and a P-GaN layer which are stacked on the substrate in sequence, the multi-quantum well layer comprises a shallow well transition layer, a high-temperature quantum well layer, a stress release layer and a low-temperature quantum well layer which are sequentially stacked, and the stress release layer comprises AlN layers and GaN layers which are periodically and alternately stacked. By implementing the invention, the luminous efficiency of the light-emitting diode under high current density can be effectively improved.

Semiconductor light-emitting devices are provided, which includes a substrate, a Negative-type semiconductor, a quantum well, an electron-blocking layer, and a Positive-type semiconductor arranged in a sequential stack. The quantum well includes a first quantum well, a second quantum well, and a third quantum well. Optical parameters of the first quantum well, the second quantum well, and the third quantum well are distributed in a gradient in at least one direction. The quantum well includes a periodic structure consisting of a well layer and a barrier layer. A coefficient of thermal expansion of the well layer is smaller than or equal to that of the barrier layer. An elastic coefficient of the well layer is smaller than or equal to that of the barrier layer. A lattice constant of the well layer is greater than or equal to that of the barrier layer. A coefficient of spontaneous polarization of the well layer is smaller than or equal to that of spontaneous polarization of the barrier layer.

According to the B1-level flame-retardant cable provided by the utility model, a combined structure of the low-smoke halogen-free flame-retardant layer, the inner flame-retardant layer and the outer flame-retardant layer is introduced, so that the cable is excellent in performance under a fire hazard condition, the cable core is effectively prevented from being burnt, and basic functions of an electrical system can be kept in a certain time when the fire hazard occurs in time; and adverse effects of fire on equipment and lines are reduced. Meanwhile, the shielding layer arranged on the cable prevents signals in the cable from external electromagnetic interference, electromagnetic radiation of the cable to the external environment is reduced, the water-blocking layer effectively improves the water-blocking performance of the cable, the wear-resistant outer sheath ensures the compactness of the structure in the outer sheath, the wear-resistant outer sheath is more wear-resistant, and the service life of the wear-resistant outer sheath is prolonged. The cable cannot be easily damaged during use, and the service life of the cable is ensured. Therefore, the B1-level flame-retardant cable has good flame-retardant performance and excellent performance, and is excellent in performance in a complex environment, and a reliable solution is provided for the stability and reliability of an electric power system.

A semiconductor device includes: a lower structure; a plurality of horizontal layers horizontally oriented over the lower structure; a first conductive line commonly coupled to first ends of the horizontal layers and extending in a direction perpendicular to the lower structure; a plurality of second conductive lines crossing the horizontal layers, respectively; a plurality of data storage elements coupled to second ends of the horizontal layers, respectively, and stacked in a direction perpendicular to the lower structure; capping layers disposed between the second conductive lines and the first conductive line; and blocking layers disposed between the capping layers and the first conductive line.

The invention provides a medical packaging material and a preparation method thereof.The preparation method comprises the steps that S100, polypropylene, maleic anhydride grafted co-polypropylene, peroxide and filler are mixed, then melt extrusion and two-way stretching are conducted, and a printing layer is obtained; s200, respectively preparing a barrier layer and a heat sealing layer; and S300, the heat sealing layer, the blocking layer and the printing layer are sequentially stacked from inside to outside, and the packaging material is obtained. Through the preparation method of the packaging material, the prepared packaging material has excellent barrier property and antibacterial property while resisting high temperature, and can meet the requirements of the medical field.

The invention relates to the technical field of chip preparation, and provides a chip based on an annular photonic crystal and a preparation method thereof. The preparation method comprises the following steps: growing a nucleating layer on a substrate; growing a superlattice structure on one side, away from the substrate, of the nucleating layer; sequentially growing an n-type coating layer, an n-type waveguide layer, a quantum well and a p-type electron blocking layer on one side, deviating from the nucleating layer, of the superlattice structure; etching a plurality of annular cavities on the p-type electron barrier layer to form an annular photonic crystal; growing a p-type extension contact layer on one side, deviating from the quantum well, of the p-type electron blocking layer; and carrying out in-situ annealing treatment. According to the preparation method, the directivity of the photonic band gap can be effectively adjusted, uniform light waves in all directions on the side face can be formed, so that leakage of laser from a non-light-emitting area on the side face is restrained, the light emitting efficiency is improved, the annular photonic crystals are periodically distributed, and the light beam quality is effectively guaranteed.

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and relates to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a non-doped GaN layer, an N-type GaN layer, an electron dredging layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer which are stacked on the substrate in sequence, the electron dredging layer comprises a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are sequentially stacked, the first sub-layer is a Si3N4 layer, the second sub-layer comprises an AlGaN layer, a first InGaN layer and a first GaN layer which are periodically and alternately stacked, the third sub-layer comprises a second GaN layer and a second InGaN layer which are periodically and alternately stacked, and the fourth sub-layer is a Si3N4 layer. And the fourth sub-layer comprises an AlInGaN layer, a third InGaN layer and a third GaN layer which are periodically and alternately stacked. According to the invention, while the electronic expansibility is improved, excessive electrons are prevented from entering the multi-quantum well layer to generate electron overflow.

Semiconductor devices including one or more hydrogen-blocking layers are described. In one example, a semiconductor device comprises a semiconductor substrate including a source region, a gate region, a drain region, and a drain access region, where a heterojunction structure is disposed over the semiconductor substrate. The heterojunction structure includes a buffer layer over the semiconductor substrate and a barrier layer over the buffer layer. A p-doped III-N layer is disposed over the barrier layer in the gate region and a gate electrode is formed over the p-doped III-N layer. A first hydrogen-blocking layer is disposed over the gate electrode where the first hydrogen-blocking layer is configured to arrest diffusion of hydrogen into the p-doped III-N layer from a dielectric layer formed after forming the gate electrode.

A display device includes a substrate, pixel electrodes on the substrate, a bank in which opening areas partially exposing the pixel electrodes are defined, organic light emitting layers disposed on the pixel electrodes, a common electrode disposed on the organic light emitting layers and the bank, an encapsulation layer disposed on the common electrode, a touch electrode which is disposed on the encapsulation layer and does not overlap the opening areas in a thickness direction, a first adhesive member disposed on the touch electrode, a first light blocking layer which is disposed on the first adhesive member and does not overlap the opening areas in the thickness direction, color filters which are disposed on the first adhesive member and overlap the opening areas in the thickness direction, and a support layer which is disposed on the first light blocking layer and the color filters and includes a first organic material.

The embodiment of the invention provides a laser array and a laser radar, and relates to the technical field of optical perception. The differential resistance of the laser array is adjustable, and the optical power of the output emitted laser is adjustable. The laser array comprises a first laser and a second laser; the first laser comprises a first reflecting layer, a first active layer and a second reflecting layer which are sequentially arranged along the epitaxial direction, and a first oxidation hole is formed in the second reflecting layer; the second laser comprises a third reflecting layer, a second active layer and a fourth reflecting layer which are sequentially arranged in the epitaxial direction, a second oxidation hole is formed in the fourth reflecting layer, and a light blocking layer is further arranged on the side, away from the second active layer, of the fourth reflecting layer. The projection of the light blocking layer on the second active layer is overlapped with the projection of the second oxidation hole on the second active layer; the first laser is electrically connected with the second laser.

To provide a nitride semiconductor light-emitting element which emits ultraviolet light with improved luminous efficiency.SOLUTION: The light-emitting element includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer positioned between the n-side semiconductor layer and the p-side semiconductor layer and also includes an electron blocking layer between the p-side semiconductor layer and the active layer. The active layer includes a first barrier layer containing Al, a first well layer containing Al and emitting ultraviolet light, a second barrier layer containing Al, and a second well layer being in contact with the electron blocking layer, containing Al, and emitting ultraviolet light in order from the n-side semiconductor layer side. The Al composition ratio of the second well layer is higher than the Al composition ratio of the first well layer. The film thickness of the second well layer is smaller than the film thickness of the first well layer.SELECTED DRAWING: Figure 2

A lighting device disclosed in an embodiment of the invention includes a substrate; a plurality of light sources disposed on the substrate; a resin layer covering the light source on the substrate; a light blocking layer having an opening portion on the resin layer; and a lens plate disposed on the light blocking layer, wherein the lens plate includes a light transmitting portion and a convex portion arranged on one surface or the other surface of the light transmitting portion, and the total area of the opening portions is 50% or less of an area of an emission surface through which light is emitted through the resin layer, and the interval between the lens plate and the light blocking layer may be greater than the length of the opening portion.

The invention discloses a compound containing triazine and spiroanthracene fluorene structures and an organic electroluminescent device thereof, and belongs to the technical field of semiconductor materials. The compound containing the triazine and spiroanthracene fluorene structure is shown as a general formula (1): # imgabs0. The compound containing the triazine and spiroanthracene fluorene structure is applied to an organic thin film layer of an organic electroluminescent device, and is particularly applied to a hole blocking layer in an electron transmission region thin film layer of the organic thin film layer. The compound containing the triazine and spiroanthracene fluorene structure has good stability and good hole blocking capability, and when the compound containing the triazine and spiroanthracene fluorene structure is used as a material of an organic electroluminescent device, the efficiency of the device is remarkably improved, and the service life of the device is remarkably prolonged.