1891 results about "Blocking layer" patented technology

The invention provides a light-emitting diode chip and a preparation method thereof, and the light-emitting diode chip comprises a conductive silicon wafer, a metal bonding layer, an N-type conductive metal layer, a first insulation protection layer, a P-type conductive metal layer, a P-type reflection metal layer, a current blocking layer, a current expansion layer, and an epitaxial layer which are stacked from bottom to top. The projection of the edge of the P-type conductive metal layer on the current expansion layer is located in the projection of the isolation groove on the current expansion layer, and the ratio of the distance between the projection of the edge of the P-type conductive metal layer on the current expansion layer and the projection of the edge of the isolation groove on the current expansion layer to the width of the isolation groove is 1 / 3-2 / 3. The isolation groove and the cutting wall are arranged on the current expansion layer, and the distance proportion relation between the edge of the P-type conductive metal layer and the isolation groove is favorable for controlling the distribution of current in the light-emitting diode chip, so that the current is prevented from being excessively concentrated, the current is more uniformly expanded to the epitaxial layer, and the overall light-emitting efficiency and stability of the light-emitting diode chip are improved.

An organic light-emitting device comprises an anode, a cathode and an organic layer formed between the anode and the cathode, and the organic layer comprises a hole injection layer, a hole transmission area, an electron blocking layer, a light-emitting area and an electron transmission area. The hole transport region comprises a first material and a second material, the first material and the second material are sequentially evaporated to form two hole transport layers, and the first material is selected from a compound shown in the formula 1; and the second material is selected from a compound shown in a formula 2. According to the invention, the first material with a high refractive index is used as the first hole transport layer, the second material with a low refractive index is used as the second hole transport layer, and the structures of the first material and the second material are respectively limited at the same time. The invention overcomes the limitation of a single material or a simple mixed material in the aspects of hole transport and luminous efficiency. .

Embodiments of the present application relate to the technical field of display, and provide a display panel and a display device, for use in improving the wide-angle anti-peeping effect of the display panel. The display panel comprises: a substrate; a plurality of light-emitting elements located on one side of the substrate, wherein each of the light-emitting elements comprises a first light-emitting unit and a second light-emitting unit; a first light blocking layer located on the side of the first light-emitting unit distant from the substrate, wherein the first light blocking layer comprises a first opening; and a second light blocking layer located on the side of the first light blocking layer distant from the substrate, wherein the second light blocking layer comprises a second opening. In a direction perpendicular to the plane where the substrate is located, both the first opening and the second opening at least partially overlap the first light-emitting unit; and the area of the first opening is greater than that of the second opening, and the orthographic projection of the second light blocking layer on the plane where the substrate is located at least partially covers the edge of the first opening.

A display device includes a display area in which a plurality of first pixels and second pixels including a plurality of pixel electrodes spaced apart from each other are disposed, a first light blocking layer disposed in the display area and including a plurality of holes disposed to overlap the pixel electrodes, a plurality of color filters disposed on the first light blocking layer to correspond to the holes, and a second light blocking layer disposed on the color filter and disposed to correspond to the pixel electrodes of the second pixels, the first light blocking layer including a plurality of divided portions disposed around the holes of the second pixel and penetrating the first light blocking layer, and the color filters disposed in the second pixel and disposed to cover the hole of the first light blocking layer, where the divided portions are disposed to correspond to the holes.

The invention relates to the technical field of semiconductor devices, in particular to a low-working-current-density green light Micro-LED epitaxial structure and a preparation method thereof. The epitaxial structure comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer and a P-type semiconductor layer. The electron blocking layer is not arranged on the multi-quantum-well light-emitting layer, the multi-quantum-well light-emitting layer comprises four sub-layers including a first light blue light multi-quantum-well layer, a second blue light multi-quantum-well layer, a third green light multi-quantum-well layer and a fourth light blue light multi-quantum-well layer, and the In component content in the third green light multi-quantum-well layer is larger than that in other layers. The third cyan light multi-quantum well layer is a main light-emitting unit and is not provided with an electron blocking layer, so that the blocking effect on hole injection can be eliminated, the hole injection efficiency of the P-type semiconductor layer is remarkably improved, and the matching degree of electron hole concentration in a multi-quantum well light-emitting layer region is improved.

The invention discloses a display panel and a display device. The display panel comprises a driving backboard, a pixel definition layer, a light emitting layer, a first light blocking layer and a black matrix layer. Wherein at least part of the first light blocking layer covers the inner wall of each pixel hole and is in contact with the inner wall of each pixel hole, so that at least part of large-viewing-angle light rays emitted by the light emitting layer in the pixel holes can be blocked by the first light blocking layer, and the large-viewing-angle light rays emitted by the light emitting layer in the pixel holes can be blocked by the first light blocking layer. Therefore, the possibility that large-view-angle light rays are emitted from the areas corresponding to the adjacent pixel holes is reduced, the risk that the display panel leaks light under the large view angle is reduced, and then the peep-proof effect of the display panel can be improved.

The invention relates to the technical field of semiconductor devices, in particular to a multiband light-emitting diode epitaxial structure and a preparation method thereof. The multiband light-emitting diode epitaxial structure sequentially comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type semiconductor layer from bottom to top, the multi-quantum well light-emitting layer comprises four sub-layers, namely a first long-wave cyan light multi-quantum well layer, a second short-wave cyan light multi-quantum well layer, a third long-wave blue light multi-quantum well layer and a fourth short-wave blue light multi-quantum well layer which are sequentially stacked and grown from bottom to top, and the light-emitting wavelengths are sequentially decreased. Meanwhile, by combining the design of the sub-layers of the multiple quantum well light-emitting layers and through the synergistic effect of exciting light of all wave bands, the overall excitation efficiency can be improved, full-spectrum white light is output, the full-spectrum white light is closer to sunlight, the light-emitting efficiency is high, the color rendering property is good, the stability is better, and harm to human eyes is small.

The invention discloses a GaN-based blue-green light LED epitaxial structure and a preparation method thereof. The GaN-based blue-green light LED epitaxial structure comprises a substrate, and a buffer layer, a 3D layer, a U-GaN layer, an N-GaN layer, a multi-quantum well layer, an electron blocking layer and a P-GaN layer which are stacked on the substrate in sequence, the multi-quantum well layer comprises a shallow well transition layer, a high-temperature quantum well layer, a stress release layer and a low-temperature quantum well layer which are sequentially stacked, and the stress release layer comprises AlN layers and GaN layers which are periodically and alternately stacked. By implementing the invention, the luminous efficiency of the light-emitting diode under high current density can be effectively improved.

Semiconductor light-emitting devices are provided, which includes a substrate, a Negative-type semiconductor, a quantum well, an electron-blocking layer, and a Positive-type semiconductor arranged in a sequential stack. The quantum well includes a first quantum well, a second quantum well, and a third quantum well. Optical parameters of the first quantum well, the second quantum well, and the third quantum well are distributed in a gradient in at least one direction. The quantum well includes a periodic structure consisting of a well layer and a barrier layer. A coefficient of thermal expansion of the well layer is smaller than or equal to that of the barrier layer. An elastic coefficient of the well layer is smaller than or equal to that of the barrier layer. A lattice constant of the well layer is greater than or equal to that of the barrier layer. A coefficient of spontaneous polarization of the well layer is smaller than or equal to that of spontaneous polarization of the barrier layer.

The invention relates to the technical field of chip preparation, and provides a chip based on an annular photonic crystal and a preparation method thereof. The preparation method comprises the following steps: growing a nucleating layer on a substrate; growing a superlattice structure on one side, away from the substrate, of the nucleating layer; sequentially growing an n-type coating layer, an n-type waveguide layer, a quantum well and a p-type electron blocking layer on one side, deviating from the nucleating layer, of the superlattice structure; etching a plurality of annular cavities on the p-type electron barrier layer to form an annular photonic crystal; growing a p-type extension contact layer on one side, deviating from the quantum well, of the p-type electron blocking layer; and carrying out in-situ annealing treatment. According to the preparation method, the directivity of the photonic band gap can be effectively adjusted, uniform light waves in all directions on the side face can be formed, so that leakage of laser from a non-light-emitting area on the side face is restrained, the light emitting efficiency is improved, the annular photonic crystals are periodically distributed, and the light beam quality is effectively guaranteed.

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and relates to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a non-doped GaN layer, an N-type GaN layer, an electron dredging layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer which are stacked on the substrate in sequence, the electron dredging layer comprises a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are sequentially stacked, the first sub-layer is a Si3N4 layer, the second sub-layer comprises an AlGaN layer, a first InGaN layer and a first GaN layer which are periodically and alternately stacked, the third sub-layer comprises a second GaN layer and a second InGaN layer which are periodically and alternately stacked, and the fourth sub-layer is a Si3N4 layer. And the fourth sub-layer comprises an AlInGaN layer, a third InGaN layer and a third GaN layer which are periodically and alternately stacked. According to the invention, while the electronic expansibility is improved, excessive electrons are prevented from entering the multi-quantum well layer to generate electron overflow.

Semiconductor devices including one or more hydrogen-blocking layers are described. In one example, a semiconductor device comprises a semiconductor substrate including a source region, a gate region, a drain region, and a drain access region, where a heterojunction structure is disposed over the semiconductor substrate. The heterojunction structure includes a buffer layer over the semiconductor substrate and a barrier layer over the buffer layer. A p-doped III-N layer is disposed over the barrier layer in the gate region and a gate electrode is formed over the p-doped III-N layer. A first hydrogen-blocking layer is disposed over the gate electrode where the first hydrogen-blocking layer is configured to arrest diffusion of hydrogen into the p-doped III-N layer from a dielectric layer formed after forming the gate electrode.

A display device includes a substrate, pixel electrodes on the substrate, a bank in which opening areas partially exposing the pixel electrodes are defined, organic light emitting layers disposed on the pixel electrodes, a common electrode disposed on the organic light emitting layers and the bank, an encapsulation layer disposed on the common electrode, a touch electrode which is disposed on the encapsulation layer and does not overlap the opening areas in a thickness direction, a first adhesive member disposed on the touch electrode, a first light blocking layer which is disposed on the first adhesive member and does not overlap the opening areas in the thickness direction, color filters which are disposed on the first adhesive member and overlap the opening areas in the thickness direction, and a support layer which is disposed on the first light blocking layer and the color filters and includes a first organic material.

The embodiment of the invention provides a laser array and a laser radar, and relates to the technical field of optical perception. The differential resistance of the laser array is adjustable, and the optical power of the output emitted laser is adjustable. The laser array comprises a first laser and a second laser; the first laser comprises a first reflecting layer, a first active layer and a second reflecting layer which are sequentially arranged along the epitaxial direction, and a first oxidation hole is formed in the second reflecting layer; the second laser comprises a third reflecting layer, a second active layer and a fourth reflecting layer which are sequentially arranged in the epitaxial direction, a second oxidation hole is formed in the fourth reflecting layer, and a light blocking layer is further arranged on the side, away from the second active layer, of the fourth reflecting layer. The projection of the light blocking layer on the second active layer is overlapped with the projection of the second oxidation hole on the second active layer; the first laser is electrically connected with the second laser.

A pixel circuit includes: a phototransistor configured to receive, by one region of a source and a drain, inflow of photo-carriers generated by light entering a substrate, and configured to output a voltage signal from the one region; and a blocking layer provided on another region of the drain and the source and on a side of a channel far from a surface, and configured to prevent the photo-carriers from directly flowing into the other region. The phototransistor causes a sub-threshold current to flow between the source and the drain in a pinch-off state. Each of the source and the drain of the phototransistor is periodically reset to a reset voltage. The reset voltage is set to a voltage between a voltage at which a dark current of the phototransistor becomes zero and a voltage at which a bias voltage of the phototransistor becomes zero.

The present invention provides a novel prime material which is used in a compound of an organic electroluminescent device and which is characterized by comprising a compound having a structure represented by formula (I) # imgabs0. The compound of the present invention can be used in an electron blocking layer in an organic EL device. The preparation is simple, the transmission of carriers in the device can be improved and balanced, the voltage of the device is reduced, the luminous efficiency is improved, and the service life is prolonged.

A display device includes a display area in which a plurality of pixels, each including a plurality of pixel electrodes spaced apart from each other, are disposed. A first light blocking layer is disposed in the display area and includes a plurality of holes overlapping the plurality of pixel electrodes. A plurality of color filters is disposed on the first light blocking layer and respectively corresponds to the plurality of holes. A second light blocking layer is disposed on the color filter and corresponds to the pixel electrodes of some of the plurality of pixels. The second light blocking layer surrounds the pixel electrodes of some of the plurality of pixels in a plan view and includes a plurality of light blocking patterns having different widths.

An electroluminescent display device according to an example embodiment of the present disclosure may include a substrate having an active area and a non-active area, an oxide thin film transistor disposed on the substrate, an inorganic layer disposed on the oxide thin film transistor, an organic layer disposed on the inorganic layer, at least one hole disposed in the organic layer of the non-active area, a hydrogen blocking layer disposed on the organic layer and an inner surface of the hole and a light emitting element disposed on the organic layer and including an anode, a light emitting unit, and a cathode. As a result, characteristics and reliability of the thin film transistor can be improved by preventing hydrogen from flowing into the oxide thin film transistor.

The invention relates to a P-type GaN LED epitaxial structure based on segmented annealing and compensation doping and a preparation method thereof, and belongs to the technical field of nitride semiconductor epitaxial growth and doping activation. The epitaxial structure sequentially comprises a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well active layer, a P-type AlGaN electron barrier layer, a P-type GaN layer and an MgN compensation layer which are arranged on the substrate layer; wherein the MgN compensation layer is a high-concentration magnesium-doped nitride semiconductor layer, is arranged on the P-type GaN layer, and is used for compensating Mg loss and inhibiting nitrogen vacancy formation in the subsequent annealing process. The preparation method comprises the steps of performing multi-stage annealing treatment on the P-type GaN layer, performing epitaxial growth and annealing on the compensation layer, and finally performing low-temperature post-treatment annealing to form a surface passivation region. According to the structure, the Mg activation efficiency and the hole concentration are remarkably improved through an in-vivo activation and surface compensation synergistic mechanism, the contact resistance is reduced, the conductivity and the light-emitting performance of an LED device are improved, and the structure has excellent implementability and industrialization prospects.

The invention discloses a thermal-decay-resistant red light Micro LED epitaxial structure and a preparation method thereof. The epitaxial structure sequentially comprises a substrate layer, an n-type buffer layer, an n-type etching barrier layer, an n-type ohmic contact layer, an n-type limiting layer, a quantum well structure, a p-type spacer layer, a p-type electron barrier layer and a p-type ohmic contact layer from bottom to top. Wherein the quantum well structure is formed by alternating 1-5 pairs of InGaP well layers and three-section type p-type AlGaInP barrier layers, and the three sections of barrier layers adopt gradient energy level design and are all subjected to p-type doping; according to the invention, the problems of carrier loss and low recombination efficiency at high temperature in the prior art are solved by blocking electron overflow through the gradient energy level barrier and supplementing the hole concentration through p-type doping, so that the 85 DEG C external quantum efficiency attenuation rate is less than or equal to 10%, the service life is prolonged to more than 50,000 hours, and the process is compatible with mass production and is suitable for the fields of display, illumination and the like.

The present invention relates to a metal complex having a structure of chemical formula (I). The metal complex is applied to an organic light-emitting device which emits deep red or near-infrared light, and shows a lower driving voltage and higher luminous efficiency, and has greatly prolonged service life. Therefore, the metal complex has the potential of being applied in the field of organic light-emitting devices. Also provided is an organic light-emitting device, including a cathode, an anode, and an organic layer. The organic layer is one or more of a hole injection layer, a hole transport layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer; and at least one layer in the organic layer contains the compound of structural formula (I).

The invention belongs to the technical field of cable waterproof design, and particularly relates to a pressure-resistant water-blocking layer and an insulated cable with the pressure-resistant water-blocking layer, the pressure-resistant water-blocking layer is formed by wrapping water-blocking cloth in the insulated cable, and the water-blocking cloth comprises water-blocking powder and base cloth used for loading and supporting the water-blocking powder. The water-blocking powder is a cross-linked copolymer of vinyl benzene sulfonate and acrylate, and the water absorption capacity of the pressure-resistant water-blocking layer is increased through the measure, so that the expansion degree of the pressure-resistant water-blocking layer is further increased, the internal structure of the cable is further expanded and densified, a water seepage channel in the cable is more favorably blocked, and the service life of the cable is prolonged. And water is prevented from further permeating into the deep part of the cable, so that the operation of the cable in a water environment can be better guaranteed.

A semiconductor device may include a gate structure including stacked conductive layers and insulating regions disposed between the conductive layers; a channel layer extending through the gate structure; data storage patterns surrounding the channel layer and disposed between the channel layer and the conductive layers, respectively; oxidation patterns surrounding the channel layer and disposed between the channel layer and the insulating regions, respectively; and a blocking layer surrounding the data storage patterns and the oxidation patterns and including concave portions disposed to correspond to the insulating regions.

The invention discloses a recoverable high-barrier-property multilayer composite film and a preparation method thereof. The composite film adopts a five-layer symmetrical structure, namely a heat sealing layer, a first bonding layer, a blocking layer, a second bonding layer and a surface protection layer. Wherein the barrier layer is a montmorillonite modified ethylene-vinyl alcohol copolymer, and montmorillonite is modified by a carboxyl functionalized ammonium bromide intercalator; the bonding layer is maleic anhydride grafted polylactic acid; the heat sealing layer contains modified composite filler; the surface protection layer is a polyethylene / graphene modified coupling agent composite system. The preparation method comprises the steps of intercalation modified montmorillonite preparation, barrier layer material melt blending, five-layer co-extrusion casting, gradient hot pressing and curing treatment. The problems that a traditional high-barrier film is unrecyclable, the interlayer binding force is weak and the high-temperature stability is poor are solved, the ultrahigh barrier performance that the oxygen transmission rate is smaller than or equal to 0.5 cm < 3 > / (m < 2 >. 24 h) and the water vapor transmission rate is smaller than or equal to 1.0 g / (m < 2 >. 24 h) is achieved, and the mechanical property retention rate is larger than or equal to 85% after recycling and re-pelletizing.

The invention provides a surface-emitting gallium nitride VCSEL laser chip and an epitaxial defect suppression preparation method thereof, and relates to the technical field of laser chips, the surface-emitting gallium nitride VCSEL laser chip comprises a substrate, a low-temperature nucleating layer, a high-temperature recovery layer, a stress regulation type nano mask composite defect blocking layer, an n-type nitride DBR reflector, an active region, a polarization enhanced tunnel junction and the like, the defect blocking layer adopts an in-situ silicon nitride nano-porous mask layer to be matched with an aluminum gallium nitride / gallium nitride stress compensation superlattice layer, through pulse type lateral epitaxial overgrowth annihilation penetrating dislocation, and the n-type nitride DBR reflector adopts an AlInN / GaN lattice matching material system to be combined with a hydrogen etching interruption modification technology, so that thick film growth with zero cracks and high reflectivity is realized; a polarization enhanced tunneling junction is used at the top to replace ITO, and the hole tunneling probability is enhanced by piezoelectric polarization in InGaN, so that efficient current injection with low working voltage and no absorption loss is realized, the dislocation density and the device voltage are remarkably reduced, and the yield of an epitaxial wafer and the photoelectric conversion efficiency are improved.

The present invention provides a light-emitting diode epitaxial wafer and a method for fabricating the same. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a three-dimensional nucleation layer, an undoped GaN layer, an N-type GaN layer, a multi-quantum well layer, an electron blocking layer, and a P-type GaN layer sequentially deposited on the substrate. The three-dimensional nucleation layer comprises a stacked first and second three-dimensional nucleation sublayers, the thickness of the first three-dimensional nucleation sublayer being less than that of the second three-dimensional nucleation sublayer, both being MgGaN layers, and the growth temperature of the second three-dimensional nucleation sublayer being 10 to 100°C higher than that of the first three-dimensional nucleation sublayer. This light-emitting diode epitaxial wafer can increase the density of V-pits, improve carrier injection efficiency, and enhance the optoelectronic performance of the light-emitting diode.

The present invention relates to the field of optoelectronics, and discloses a light-emitting diode epitaxial wafer, a method for manufacturing the same, and an LED. The light-emitting diode epitaxial wafer comprises a substrate, on which a buffer layer, an undoped GaN layer, an N-type GaN layer, an active layer, an electron blocking layer, and a P-type GaN layer are sequentially provided; the electron blocking layer comprises a BAlN / P-GaN superlattice layer, an AlGaN / P-InGaN superlattice layer, and a BN layer stacked in sequence. The light-emitting diode epitaxial wafer provided by the present invention reduces electron overflow, improves hole injection efficiency, replenishes hole concentration, and enhances the luminous efficiency of the light-emitting diode.

Embodiments of the present application relate to the technical field of optical sensing, and provide a laser array and a laser radar. The differential resistance of the laser array is adjustable, and the optical power of output emitted laser light is adjustable. The laser array comprises a first laser and a second laser; the first laser comprises a first reflecting layer, a first active layer, and a second reflecting layer which are sequentially arranged in an epitaxial direction, and a first oxidation hole is formed in the second reflecting layer; the second laser comprises a third reflecting layer, a second active layer, and a fourth reflecting layer which are sequentially arranged in the epitaxial direction, a second oxidation hole is formed in the fourth reflecting layer, a light blocking layer is further provided on the side of the fourth reflecting layer away from the second active layer, and the projection of the light blocking layer on the second active layer overlaps the projection of the second oxidation hole on the second active layer; the first laser is electrically connected to the second laser.

This invention relates to an aromatic amine organic compound and an organic electroluminescent device containing the same, belonging to the field of semiconductor materials technology. The structure of the compound provided by this invention is shown in general formula (1): When the hole transport material or electron blocking layer material of the organic electroluminescent device is prepared by using the aromatic amine compound of this invention, the device voltage can be reduced and the device life can be extended at the same time, especially the device high temperature life is significantly improved.

The utility model provides an easy-to-tear cover film and a package, and belongs to the technical field of food packaging. The easy-to-tear cover film comprises a heat sealing layer and a barrier layer connected to the surface of the heat sealing layer, the heat sealing layer comprises a connecting part and a separating part which is positioned on the inner side of the connecting part and can be selectively separated from the connecting part; when the easy-to-tear cover film is torn, at least partial area of the separating part is separated from the connecting part to form an opening; and the blocking layer is provided with a tearing guide line corresponding to the starting end of the opening. According to the easy-to-tear cover film, the heat sealing layer comprises the connecting part and the separating part which can be selectively separated, and the tearing guide line is arranged at the position, corresponding to the starting end of the opening, of the blocking layer, so that when the easy-to-tear cover film is torn, the separating part can be effectively separated from at least part of the connecting part under the action of the binding force of the blocking layer; the connecting part is always connected with the packaging opening. The easy-to-tear cover film can be effectively uncovered with small force in the process, and eating is convenient. The package with the easy-to-tear cover film can be conveniently used by consumers.